auf Bestellung 2016 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 4+ | 0.93 EUR |
| 10+ | 0.79 EUR |
| 100+ | 0.59 EUR |
| 500+ | 0.46 EUR |
| 1000+ | 0.37 EUR |
| 3000+ | 0.32 EUR |
| 9000+ | 0.29 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details PJD35P03_L2_00001 Panjit
Description: 30V P-CHANNEL ENHANCEMENT MODE M, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta), 35A (Tc), Rds On (Max) @ Id, Vgs: 19mOhm @ 8A, 10V, Power Dissipation (Max): 2W (Ta), 35W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TO-252, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 1169 pF @ 15 V.
Weitere Produktangebote PJD35P03_L2_00001 nach Preis ab 0.22 EUR bis 0.97 EUR
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PJD35P03_L2_00001 | Hersteller : Panjit International Inc. |
 Description: 30V P-CHANNEL ENHANCEMENT MODE MPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta), 35A (Tc) Rds On (Max) @ Id, Vgs: 19mOhm @ 8A, 10V Power Dissipation (Max): 2W (Ta), 35W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1169 pF @ 15 V |
auf Bestellung 2160 Stücke: Lieferzeit 10-14 Tag (e) |
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PJD35P03_L2_00001 | Hersteller : PanJit Semiconductor |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -35A; Idm: -140A; 35W; TO252AA Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -35A Pulsed drain current: -140A Power dissipation: 35W Case: TO252AA Gate-source voltage: ±20V On-state resistance: 30mΩ Mounting: SMD Gate charge: 11nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2990 Stücke: Lieferzeit 7-14 Tag (e) |
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PJD35P03_L2_00001 | Hersteller : PanJit Semiconductor |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -35A; Idm: -140A; 35W; TO252AA Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -35A Pulsed drain current: -140A Power dissipation: 35W Case: TO252AA Gate-source voltage: ±20V On-state resistance: 30mΩ Mounting: SMD Gate charge: 11nC Kind of package: reel; tape Kind of channel: enhanced |
auf Bestellung 2990 Stücke: Lieferzeit 14-21 Tag (e) |
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PJD35P03_L2_00001 | Hersteller : Panjit International Inc. |
Description: 30V P-CHANNEL ENHANCEMENT MODE M Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta), 35A (Tc) Rds On (Max) @ Id, Vgs: 19mOhm @ 8A, 10V Power Dissipation (Max): 2W (Ta), 35W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1169 pF @ 15 V |
Produkt ist nicht verfügbar |
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PJD35P03-L2-00001 | Hersteller : Panjit |
MOSFET TO-252AA/MOS/TO/NFET-30SMP |
Produkt ist nicht verfügbar |