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PJD16P06A_L2_00001 PanJit Semiconductor
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Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -16A; Idm: -64A; 2W; TO252AA
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -16A
Pulsed drain current: -64A
Power dissipation: 2W
Case: TO252AA
Gate-source voltage: ±20V
On-state resistance: 65mΩ
Mounting: SMD
Gate charge: 22nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 12000 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
100+ | 0.72 EUR |
113+ | 0.64 EUR |
145+ | 0.5 EUR |
205+ | 0.35 EUR |
217+ | 0.33 EUR |
3000+ | 0.32 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details PJD16P06A_L2_00001 PanJit Semiconductor
Description: 60V P-CHANNEL ENHANCEMENT MODE M, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 16A (Tc), Rds On (Max) @ Id, Vgs: 48mOhm @ 8A, 10V, Power Dissipation (Max): 2W (Ta), 25W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TO-252, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1256 pF @ 30 V.
Weitere Produktangebote PJD16P06A_L2_00001 nach Preis ab 0.32 EUR bis 0.97 EUR
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PJD16P06A_L2_00001 | Hersteller : PanJit Semiconductor |
![]() Description: Transistor: P-MOSFET; unipolar; -60V; -16A; Idm: -64A; 2W; TO252AA Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -16A Pulsed drain current: -64A Power dissipation: 2W Case: TO252AA Gate-source voltage: ±20V On-state resistance: 65mΩ Mounting: SMD Gate charge: 22nC Kind of channel: enhanced |
auf Bestellung 12000 Stücke: Lieferzeit 14-21 Tag (e) |
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PJD16P06A_L2_00001 | Hersteller : Panjit |
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auf Bestellung 17328 Stücke: Lieferzeit 10-14 Tag (e) |
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PJD16P06A_L2_00001 | Hersteller : Panjit International Inc. |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 16A (Tc) Rds On (Max) @ Id, Vgs: 48mOhm @ 8A, 10V Power Dissipation (Max): 2W (Ta), 25W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1256 pF @ 30 V |
Produkt ist nicht verfügbar |
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PJD16P06A_L2_00001 | Hersteller : Panjit International Inc. |
![]() Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 16A (Tc) Rds On (Max) @ Id, Vgs: 48mOhm @ 8A, 10V Power Dissipation (Max): 2W (Ta), 25W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1256 pF @ 30 V |
Produkt ist nicht verfügbar |
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PJD16P06A-L2-00001 | Hersteller : Panjit |
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Produkt ist nicht verfügbar |