PJA3440-AU_R1_000A1 PanJit Semiconductor
Hersteller: PanJit SemiconductorCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 4.3A; Idm: 17.2A; 1.25W; SOT23
Application: automotive industry
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Case: SOT23
Gate charge: 4.8nC
Kind of channel: enhanced
Gate-source voltage: ±20V
On-state resistance: 51mΩ
Pulsed drain current: 17.2A
Type of transistor: N-MOSFET
Drain current: 4.3A
Drain-source voltage: 40V
Power dissipation: 1.25W
Anzahl je Verpackung: 5 Stücke
auf Bestellung 2710 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 365+ | 0.2 EUR |
| 495+ | 0.15 EUR |
| 560+ | 0.13 EUR |
| 600+ | 0.12 EUR |
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Technische Details PJA3440-AU_R1_000A1 PanJit Semiconductor
Description: SOT-23, MOSFET, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta), Rds On (Max) @ Id, Vgs: 42mOhm @ 4.3A, 10V, Power Dissipation (Max): 1.25W (Ta), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: SOT-23, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 20 V, Qualification: AEC-Q101.
Weitere Produktangebote PJA3440-AU_R1_000A1 nach Preis ab 0.12 EUR bis 0.72 EUR
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PJA3440-AU_R1_000A1 | Hersteller : PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 4.3A; Idm: 17.2A; 1.25W; SOT23 Application: automotive industry Mounting: SMD Kind of package: reel; tape Polarisation: unipolar Case: SOT23 Gate charge: 4.8nC Kind of channel: enhanced Gate-source voltage: ±20V On-state resistance: 51mΩ Pulsed drain current: 17.2A Type of transistor: N-MOSFET Drain current: 4.3A Drain-source voltage: 40V Power dissipation: 1.25W |
auf Bestellung 2710 Stücke: Lieferzeit 14-21 Tag (e) |
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PJA3440-AU_R1_000A1 | Hersteller : Panjit |
MOSFET 40V N-Channel Enhancement Mode MOSFET |
auf Bestellung 6719 Stücke: Lieferzeit 10-14 Tag (e) |
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PJA3440-AU_R1_000A1 | Hersteller : Panjit International Inc. |
Description: SOT-23, MOSFET Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta) Rds On (Max) @ Id, Vgs: 42mOhm @ 4.3A, 10V Power Dissipation (Max): 1.25W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-23 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 20 V Qualification: AEC-Q101 |
auf Bestellung 3600 Stücke: Lieferzeit 10-14 Tag (e) |
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PJA3440-AU_R1_000A1 | Hersteller : Panjit International Inc. |
Description: SOT-23, MOSFET Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta) Rds On (Max) @ Id, Vgs: 42mOhm @ 4.3A, 10V Power Dissipation (Max): 1.25W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-23 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 20 V Qualification: AEC-Q101 |
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