PJC138K-AU_R1_000A1 PanJit Semiconductor
Hersteller: PanJit SemiconductorCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 360mA; Idm: 1.2A; 236mW; SOT323
Application: automotive industry
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Case: SOT323
Gate charge: 1nC
Kind of channel: enhanced
Gate-source voltage: ±20V
On-state resistance: 4.5Ω
Pulsed drain current: 1.2A
Type of transistor: N-MOSFET
Drain current: 0.36A
Drain-source voltage: 50V
Power dissipation: 236mW
Anzahl je Verpackung: 5 Stücke
auf Bestellung 2970 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 725+ | 0.099 EUR |
| 895+ | 0.08 EUR |
| 995+ | 0.072 EUR |
| 1200+ | 0.06 EUR |
| 1270+ | 0.056 EUR |
| 9000+ | 0.054 EUR |
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Technische Details PJC138K-AU_R1_000A1 PanJit Semiconductor
Description: SOT-323, MOSFET, Packaging: Tape & Reel (TR), Package / Case: SC-70, SOT-323, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 360mA (Ta), Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V, Power Dissipation (Max): 236mW (Ta), Vgs(th) (Max) @ Id: 1.5V @ 250µA, Supplier Device Package: SOT-323, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 50 V, Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V.
Weitere Produktangebote PJC138K-AU_R1_000A1 nach Preis ab 0.056 EUR bis 0.6 EUR
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PJC138K-AU_R1_000A1 | Hersteller : PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 50V; 360mA; Idm: 1.2A; 236mW; SOT323 Application: automotive industry Mounting: SMD Kind of package: reel; tape Polarisation: unipolar Case: SOT323 Gate charge: 1nC Kind of channel: enhanced Gate-source voltage: ±20V On-state resistance: 4.5Ω Pulsed drain current: 1.2A Type of transistor: N-MOSFET Drain current: 0.36A Drain-source voltage: 50V Power dissipation: 236mW |
auf Bestellung 2970 Stücke: Lieferzeit 14-21 Tag (e) |
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PJC138K-AU_R1_000A1 | Hersteller : Panjit International Inc. |
Description: SOT-323, MOSFET Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 360mA (Ta) Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V Power Dissipation (Max): 236mW (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SOT-323 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 50 V Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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PJC138K-AU_R1_000A1 | Hersteller : Panjit International Inc. |
Description: SOT-323, MOSFET Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 360mA (Ta) Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V Power Dissipation (Max): 236mW (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SOT-323 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 50 V Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V |
auf Bestellung 3486 Stücke: Lieferzeit 10-14 Tag (e) |
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PJC138K-AU_R1_000A1 | Hersteller : Panjit |
MOSFET 50V N-Channel Enhancement Mode MOSFETESD Protected |
Produkt ist nicht verfügbar |