PJC7476_R1_00001 PanJit Semiconductor
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 300mA; Idm: 0.8A; 350mW
Kind of package: reel; tape
Drain-source voltage: 100V
Drain current: 0.3A
On-state resistance: 9Ω
Type of transistor: N-MOSFET
Power dissipation: 0.35W
Polarisation: unipolar
Gate charge: 1.8nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 0.8A
Mounting: SMD
Case: SOT323
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 300mA; Idm: 0.8A; 350mW
Kind of package: reel; tape
Drain-source voltage: 100V
Drain current: 0.3A
On-state resistance: 9Ω
Type of transistor: N-MOSFET
Power dissipation: 0.35W
Polarisation: unipolar
Gate charge: 1.8nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 0.8A
Mounting: SMD
Case: SOT323
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2984 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
139+ | 0.51 EUR |
188+ | 0.38 EUR |
532+ | 0.13 EUR |
736+ | 0.097 EUR |
770+ | 0.093 EUR |
9000+ | 0.089 EUR |
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Technische Details PJC7476_R1_00001 PanJit Semiconductor
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 100V; 300mA; Idm: 0.8A; 350mW, Kind of package: reel; tape, Drain-source voltage: 100V, Drain current: 0.3A, On-state resistance: 9Ω, Type of transistor: N-MOSFET, Power dissipation: 0.35W, Polarisation: unipolar, Gate charge: 1.8nC, Kind of channel: enhanced, Gate-source voltage: ±20V, Pulsed drain current: 0.8A, Mounting: SMD, Case: SOT323, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote PJC7476_R1_00001 nach Preis ab 0.093 EUR bis 0.74 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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PJC7476_R1_00001 | Hersteller : PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 300mA; Idm: 0.8A; 350mW Kind of package: reel; tape Drain-source voltage: 100V Drain current: 0.3A On-state resistance: 9Ω Type of transistor: N-MOSFET Power dissipation: 0.35W Polarisation: unipolar Gate charge: 1.8nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 0.8A Mounting: SMD Case: SOT323 |
auf Bestellung 2984 Stücke: Lieferzeit 14-21 Tag (e) |
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PJC7476_R1_00001 | Hersteller : Panjit | MOSFET 100V P-Channel Enhancement Mode MOSFET-ESD Protected |
auf Bestellung 2687 Stücke: Lieferzeit 10-14 Tag (e) |
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PJC7476_R1_00001 | Hersteller : Panjit International Inc. | Description: 100V N-CHANNEL ENHANCEMENT MODE |
auf Bestellung 2975 Stücke: Lieferzeit 10-14 Tag (e) |
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PJC7476_R1_00001 | Hersteller : Panjit International Inc. | Description: 100V N-CHANNEL ENHANCEMENT MODE |
Produkt ist nicht verfügbar |