Produkte > MICROCHIP (MICROSEMI) > Alle Produkte des Herstellers MICROCHIP (MICROSEMI) (4150) > Seite 55 nach 70
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| APTGT75H60T3G | MICROCHIP (MICROSEMI) |
 Category: IGBT modulesDescription: Module: IGBT; transistor/transistor; H-bridge,NTC thermistor Technology: Field Stop; Trench Collector current: 75A Case: SP3 Gate-emitter voltage: ±20V Pulsed collector current: 140A Semiconductor structure: transistor/transistor Max. off-state voltage: 0.6kV Application: motors Electrical mounting: Press-in PCB Topology: H-bridge; NTC thermistor Mechanical mounting: screw Type of module: IGBT Anzahl je Verpackung: 14 Stücke |
Produkt ist nicht verfügbar |
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| APTGT75SK120TG | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; diode/transistor; buck chopper,NTC thermistor Application: motors Electrical mounting: FASTON connectors; soldering Mechanical mounting: screw Type of module: IGBT Technology: Field Stop; Trench Topology: buck chopper; NTC thermistor Case: SP4 Max. off-state voltage: 1.2kV Semiconductor structure: diode/transistor Gate-emitter voltage: ±20V Collector current: 75A Pulsed collector current: 175A |
Produkt ist nicht verfügbar |
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| APTGT75SK120TG | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; diode/transistor; buck chopper,NTC thermistor Application: motors Electrical mounting: FASTON connectors; soldering Mechanical mounting: screw Type of module: IGBT Technology: Field Stop; Trench Topology: buck chopper; NTC thermistor Case: SP4 Max. off-state voltage: 1.2kV Semiconductor structure: diode/transistor Gate-emitter voltage: ±20V Collector current: 75A Pulsed collector current: 175A Anzahl je Verpackung: 13 Stücke |
Produkt ist nicht verfügbar |
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| APTGT75TA120PG | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge x3; Ic: 75A Type of module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT half-bridge x3 Max. off-state voltage: 1.2kV Collector current: 75A Case: SP6P Application: motors Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 175A Technology: Field Stop; Trench Mechanical mounting: screw |
Produkt ist nicht verfügbar |
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| APTGT75TA120PG | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge x3; Ic: 75A Type of module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT half-bridge x3 Max. off-state voltage: 1.2kV Collector current: 75A Case: SP6P Application: motors Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 175A Technology: Field Stop; Trench Mechanical mounting: screw Anzahl je Verpackung: 5 Stücke |
Produkt ist nicht verfügbar |
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| APTGT75TDU120PG | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; transistor/transistor,common emitter; IGBT x6 Technology: Field Stop; Trench Collector current: 75A Case: SP6P Gate-emitter voltage: ±20V Pulsed collector current: 175A Semiconductor structure: common emitter; transistor/transistor Max. off-state voltage: 1.2kV Electrical mounting: Press-in PCB Topology: IGBT x6 Mechanical mounting: screw Type of module: IGBT |
Produkt ist nicht verfügbar |
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| APTGT75TDU120PG | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; transistor/transistor,common emitter; IGBT x6 Technology: Field Stop; Trench Collector current: 75A Case: SP6P Gate-emitter voltage: ±20V Pulsed collector current: 175A Semiconductor structure: common emitter; transistor/transistor Max. off-state voltage: 1.2kV Electrical mounting: Press-in PCB Topology: IGBT x6 Mechanical mounting: screw Type of module: IGBT Anzahl je Verpackung: 5 Stücke |
Produkt ist nicht verfügbar |
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| APTGT75TDU60PG | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; transistor/transistor,common emitter; IGBT x6 Technology: Field Stop; Trench Collector current: 75A Case: SP6P Gate-emitter voltage: ±20V Pulsed collector current: 140A Semiconductor structure: common emitter; transistor/transistor Max. off-state voltage: 0.6kV Electrical mounting: Press-in PCB Topology: IGBT x6 Mechanical mounting: screw Type of module: IGBT |
Produkt ist nicht verfügbar |
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| APTGT75TDU60PG | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; transistor/transistor,common emitter; IGBT x6 Technology: Field Stop; Trench Collector current: 75A Case: SP6P Gate-emitter voltage: ±20V Pulsed collector current: 140A Semiconductor structure: common emitter; transistor/transistor Max. off-state voltage: 0.6kV Electrical mounting: Press-in PCB Topology: IGBT x6 Mechanical mounting: screw Type of module: IGBT Anzahl je Verpackung: 7 Stücke |
Produkt ist nicht verfügbar |
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| APTGT75TL60T3G | MICROCHIP (MICROSEMI) |
APTGT75TL60T3G IGBT modules |
Produkt ist nicht verfügbar |
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| APTGT75X60T3G | MICROCHIP (MICROSEMI) |
APTGT75X60T3G IGBT modules |
Produkt ist nicht verfügbar |
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| APTGTQ100A65T1G | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 60A Application: motors Pulsed collector current: 200A Semiconductor structure: transistor/transistor Max. off-state voltage: 650V Electrical mounting: Press-in PCB Mechanical mounting: screw Case: SP1 Type of module: IGBT Technology: Field Stop; Trench Gate-emitter voltage: ±20V Topology: IGBT half-bridge; NTC thermistor Collector current: 60A |
Produkt ist nicht verfügbar |
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| APTGTQ100A65T1G | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 60A Application: motors Pulsed collector current: 200A Semiconductor structure: transistor/transistor Max. off-state voltage: 650V Electrical mounting: Press-in PCB Mechanical mounting: screw Case: SP1 Type of module: IGBT Technology: Field Stop; Trench Gate-emitter voltage: ±20V Topology: IGBT half-bridge; NTC thermistor Collector current: 60A Anzahl je Verpackung: 15 Stücke |
Produkt ist nicht verfügbar |
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| APTGTQ100DA65T1G | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper,NTC thermistor Application: motors Pulsed collector current: 200A Semiconductor structure: diode/transistor Max. off-state voltage: 650V Electrical mounting: Press-in PCB Mechanical mounting: screw Case: SP1 Type of module: IGBT Technology: Field Stop; Trench Gate-emitter voltage: ±20V Topology: boost chopper; NTC thermistor Collector current: 60A |
Produkt ist nicht verfügbar |
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| APTGTQ100DA65T1G | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper,NTC thermistor Application: motors Pulsed collector current: 200A Semiconductor structure: diode/transistor Max. off-state voltage: 650V Electrical mounting: Press-in PCB Mechanical mounting: screw Case: SP1 Type of module: IGBT Technology: Field Stop; Trench Gate-emitter voltage: ±20V Topology: boost chopper; NTC thermistor Collector current: 60A Anzahl je Verpackung: 18 Stücke |
Produkt ist nicht verfügbar |
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| APTGTQ100DDA65T3G | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper x2,NTC thermistor Application: motors Pulsed collector current: 200A Semiconductor structure: diode/transistor Max. off-state voltage: 650V Electrical mounting: Press-in PCB Mechanical mounting: screw Case: SP3F Type of module: IGBT Technology: Field Stop; Trench Gate-emitter voltage: ±20V Topology: boost chopper x2; NTC thermistor Collector current: 60A |
Produkt ist nicht verfügbar |
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| APTGTQ100DDA65T3G | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper x2,NTC thermistor Application: motors Pulsed collector current: 200A Semiconductor structure: diode/transistor Max. off-state voltage: 650V Electrical mounting: Press-in PCB Mechanical mounting: screw Case: SP3F Type of module: IGBT Technology: Field Stop; Trench Gate-emitter voltage: ±20V Topology: boost chopper x2; NTC thermistor Collector current: 60A Anzahl je Verpackung: 13 Stücke |
Produkt ist nicht verfügbar |
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| APTGTQ100H65T3G | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; H-bridge,NTC thermistor Application: motors Pulsed collector current: 200A Semiconductor structure: transistor/transistor Max. off-state voltage: 650V Electrical mounting: Press-in PCB Mechanical mounting: screw Case: SP3F Type of module: IGBT Technology: Field Stop; Trench Gate-emitter voltage: ±20V Topology: H-bridge; NTC thermistor Collector current: 60A |
Produkt ist nicht verfügbar |
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| APTGTQ100H65T3G | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; H-bridge,NTC thermistor Application: motors Pulsed collector current: 200A Semiconductor structure: transistor/transistor Max. off-state voltage: 650V Electrical mounting: Press-in PCB Mechanical mounting: screw Case: SP3F Type of module: IGBT Technology: Field Stop; Trench Gate-emitter voltage: ±20V Topology: H-bridge; NTC thermistor Collector current: 60A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| APTGTQ100SK65T1G | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; diode/transistor; buck chopper,NTC thermistor Application: motors Pulsed collector current: 200A Semiconductor structure: diode/transistor Max. off-state voltage: 650V Electrical mounting: Press-in PCB Mechanical mounting: screw Case: SP1 Type of module: IGBT Technology: Field Stop; Trench Gate-emitter voltage: ±20V Topology: buck chopper; NTC thermistor Collector current: 60A |
Produkt ist nicht verfügbar |
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| APTGTQ100SK65T1G | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; diode/transistor; buck chopper,NTC thermistor Application: motors Pulsed collector current: 200A Semiconductor structure: diode/transistor Max. off-state voltage: 650V Electrical mounting: Press-in PCB Mechanical mounting: screw Case: SP1 Type of module: IGBT Technology: Field Stop; Trench Gate-emitter voltage: ±20V Topology: buck chopper; NTC thermistor Collector current: 60A Anzahl je Verpackung: 18 Stücke |
Produkt ist nicht verfügbar |
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| APTGTQ150TA65TPG | MICROCHIP (MICROSEMI) |
APTGTQ150TA65TPG IGBT modules |
Produkt ist nicht verfügbar |
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| APTGTQ200A65T3G | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 120A Application: motors Case: SP3F Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: IGBT Technology: Field Stop; Trench Topology: IGBT half-bridge; NTC thermistor Max. off-state voltage: 650V Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 120A Pulsed collector current: 400A |
Produkt ist nicht verfügbar |
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| APTGTQ200A65T3G | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 120A Application: motors Case: SP3F Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: IGBT Technology: Field Stop; Trench Topology: IGBT half-bridge; NTC thermistor Max. off-state voltage: 650V Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 120A Pulsed collector current: 400A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| APTGTQ200DA65T3G | MICROCHIP (MICROSEMI) |
APTGTQ200DA65T3G IGBT modules |
Produkt ist nicht verfügbar |
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| APTGTQ200SK65T3G | MICROCHIP (MICROSEMI) |
APTGTQ200SK65T3G IGBT modules |
Produkt ist nicht verfügbar |
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| APTGTQ50TA65T3G | MICROCHIP (MICROSEMI) |
APTGTQ50TA65T3G IGBT modules |
Produkt ist nicht verfügbar |
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| APTLGL325A1208G | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IPM; IGBT half-bridge; LP8; for UPS,motors,SMPS; 1.2kV Application: for UPS; motors; SMPS Supply voltage: 4.5...5.5V DC Operating temperature: -40...85°C Case: LP8 Technology: Field Stop; Trench Output current: 325A Type of module: IPM Frequency: 50kHz Topology: IGBT half-bridge Mounting: pin header; screw Voltage class: 1.2kV Kind of output: IGBT driver Integrated circuit features: integrated DC/DC converter |
Produkt ist nicht verfügbar |
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| APTLGL325A1208G | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IPM; IGBT half-bridge; LP8; for UPS,motors,SMPS; 1.2kV Application: for UPS; motors; SMPS Supply voltage: 4.5...5.5V DC Operating temperature: -40...85°C Case: LP8 Technology: Field Stop; Trench Output current: 325A Type of module: IPM Frequency: 50kHz Topology: IGBT half-bridge Mounting: pin header; screw Voltage class: 1.2kV Kind of output: IGBT driver Integrated circuit features: integrated DC/DC converter Anzahl je Verpackung: 3 Stücke |
Produkt ist nicht verfügbar |
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| APTLGT300A1208G | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IPM; IGBT half-bridge; LP8; for UPS,motors,SMPS; 1.2kV Application: for UPS; motors; SMPS Supply voltage: 4.5...5.5V DC Operating temperature: -40...85°C Case: LP8 Technology: Field Stop; Trench Output current: 300A Type of module: IPM Frequency: 45kHz Topology: IGBT half-bridge Mounting: pin header; screw Voltage class: 1.2kV Kind of output: IGBT driver Integrated circuit features: integrated DC/DC converter |
Produkt ist nicht verfügbar |
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| APTLGT300A1208G | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IPM; IGBT half-bridge; LP8; for UPS,motors,SMPS; 1.2kV Application: for UPS; motors; SMPS Supply voltage: 4.5...5.5V DC Operating temperature: -40...85°C Case: LP8 Technology: Field Stop; Trench Output current: 300A Type of module: IPM Frequency: 45kHz Topology: IGBT half-bridge Mounting: pin header; screw Voltage class: 1.2kV Kind of output: IGBT driver Integrated circuit features: integrated DC/DC converter Anzahl je Verpackung: 3 Stücke |
Produkt ist nicht verfügbar |
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| APTLGT400A608G | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IPM; IGBT half-bridge; LP8; for UPS,motors,SMPS; 600V Application: for UPS; motors; SMPS Supply voltage: 4.5...5.5V DC Operating temperature: -40...85°C Case: LP8 Technology: Field Stop; NPT; Trench Output current: 400A Type of module: IPM Frequency: 45kHz Topology: IGBT half-bridge Mounting: pin header; screw Voltage class: 600V Kind of output: IGBT driver Integrated circuit features: integrated DC/DC converter |
Produkt ist nicht verfügbar |
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| APTLGT400A608G | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IPM; IGBT half-bridge; LP8; for UPS,motors,SMPS; 600V Application: for UPS; motors; SMPS Supply voltage: 4.5...5.5V DC Operating temperature: -40...85°C Case: LP8 Technology: Field Stop; NPT; Trench Output current: 400A Type of module: IPM Frequency: 45kHz Topology: IGBT half-bridge Mounting: pin header; screw Voltage class: 600V Kind of output: IGBT driver Integrated circuit features: integrated DC/DC converter Anzahl je Verpackung: 3 Stücke |
Produkt ist nicht verfügbar |
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| APTM08TAM04PG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 75V; 90A; SP6P; Press-in PCB; 138W Electrical mounting: Press-in PCB Mechanical mounting: screw Gate-source voltage: ±30V Topology: MOSFET x3 half-bridge Pulsed drain current: 250A Case: SP6P Semiconductor structure: transistor/transistor Drain-source voltage: 75V Drain current: 90A On-state resistance: 4.5mΩ Power dissipation: 138W Type of module: MOSFET transistor |
Produkt ist nicht verfügbar |
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| APTM08TAM04PG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 75V; 90A; SP6P; Press-in PCB; 138W Electrical mounting: Press-in PCB Mechanical mounting: screw Gate-source voltage: ±30V Topology: MOSFET x3 half-bridge Pulsed drain current: 250A Case: SP6P Semiconductor structure: transistor/transistor Drain-source voltage: 75V Drain current: 90A On-state resistance: 4.5mΩ Power dissipation: 138W Type of module: MOSFET transistor Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| APTM100A13DG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 1kV; 49A; SP6C; FASTON connectors,screw Type of module: MOSFET transistor Mechanical mounting: screw Pulsed drain current: 240A Semiconductor structure: diode/transistor Drain-source voltage: 1kV Drain current: 49A On-state resistance: 156mΩ Power dissipation: 1.25kW Electrical mounting: FASTON connectors; screw Technology: POWER MOS 7® Gate-source voltage: ±30V Topology: MOSFET half-bridge + serial diodes Case: SP6C |
Produkt ist nicht verfügbar |
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| APTM100A13DG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 1kV; 49A; SP6C; FASTON connectors,screw Type of module: MOSFET transistor Mechanical mounting: screw Pulsed drain current: 240A Semiconductor structure: diode/transistor Drain-source voltage: 1kV Drain current: 49A On-state resistance: 156mΩ Power dissipation: 1.25kW Electrical mounting: FASTON connectors; screw Technology: POWER MOS 7® Gate-source voltage: ±30V Topology: MOSFET half-bridge + serial diodes Case: SP6C Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| APTM100A13SCG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 1kV; 49A; SP6C; Idm: 240A; 1.25kW Semiconductor structure: SiC diode/transistor Case: SP6C Power dissipation: 1.25kW Technology: POWER MOS 7®; SiC Drain-source voltage: 1kV Drain current: 49A On-state resistance: 156mΩ Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: MOSFET transistor Gate-source voltage: ±30V Topology: MOSFET half-bridge + serial diodes + parrallel diodes Pulsed drain current: 240A |
Produkt ist nicht verfügbar |
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| APTM100A13SCG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 1kV; 49A; SP6C; Idm: 240A; 1.25kW Semiconductor structure: SiC diode/transistor Case: SP6C Power dissipation: 1.25kW Technology: POWER MOS 7®; SiC Drain-source voltage: 1kV Drain current: 49A On-state resistance: 156mΩ Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: MOSFET transistor Gate-source voltage: ±30V Topology: MOSFET half-bridge + serial diodes + parrallel diodes Pulsed drain current: 240A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| APTM100A13SG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 1kV; 49A; SP6C; FASTON connectors,screw Semiconductor structure: diode/transistor Case: SP6C Power dissipation: 1.25kW Technology: POWER MOS 7® Drain-source voltage: 1kV Drain current: 49A On-state resistance: 156mΩ Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: MOSFET transistor Gate-source voltage: ±30V Topology: MOSFET half-bridge + serial diodes + parrallel diodes Pulsed drain current: 240A |
Produkt ist nicht verfügbar |
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| APTM100A13SG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 1kV; 49A; SP6C; FASTON connectors,screw Semiconductor structure: diode/transistor Case: SP6C Power dissipation: 1.25kW Technology: POWER MOS 7® Drain-source voltage: 1kV Drain current: 49A On-state resistance: 156mΩ Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: MOSFET transistor Gate-source voltage: ±30V Topology: MOSFET half-bridge + serial diodes + parrallel diodes Pulsed drain current: 240A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| APTM100A18FTG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 1kV; 33A; SP4; Idm: 172A; 780W; screw Type of module: MOSFET transistor Mechanical mounting: screw Pulsed drain current: 172A Semiconductor structure: transistor/transistor Drain-source voltage: 1kV Drain current: 33A On-state resistance: 0.21Ω Power dissipation: 780W Electrical mounting: FASTON connectors; screw Technology: FREDFET; POWER MOS 7® Gate-source voltage: ±30V Topology: MOSFET half-bridge; NTC thermistor Case: SP4 |
Produkt ist nicht verfügbar |
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| APTM100A18FTG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 1kV; 33A; SP4; Idm: 172A; 780W; screw Type of module: MOSFET transistor Mechanical mounting: screw Pulsed drain current: 172A Semiconductor structure: transistor/transistor Drain-source voltage: 1kV Drain current: 33A On-state resistance: 0.21Ω Power dissipation: 780W Electrical mounting: FASTON connectors; screw Technology: FREDFET; POWER MOS 7® Gate-source voltage: ±30V Topology: MOSFET half-bridge; NTC thermistor Case: SP4 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| APTM100A23STG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 1kV; 27A; SP4; FASTON connectors,screw Semiconductor structure: diode/transistor Case: SP4 Power dissipation: 694W Technology: POWER MOS 7® Drain-source voltage: 1kV Drain current: 27A On-state resistance: 0.27Ω Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: MOSFET transistor Gate-source voltage: ±30V Topology: MOSFET half-bridge + serial diodes + parrallel diodes; NTC thermistor Pulsed drain current: 144A |
Produkt ist nicht verfügbar |
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| APTM100A23STG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 1kV; 27A; SP4; FASTON connectors,screw Semiconductor structure: diode/transistor Case: SP4 Power dissipation: 694W Technology: POWER MOS 7® Drain-source voltage: 1kV Drain current: 27A On-state resistance: 0.27Ω Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: MOSFET transistor Gate-source voltage: ±30V Topology: MOSFET half-bridge + serial diodes + parrallel diodes; NTC thermistor Pulsed drain current: 144A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| APTM100AM90FG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 1kV; 59A; SP6C; Idm: 312A; 1.25kW Type of module: MOSFET transistor Mechanical mounting: screw Pulsed drain current: 312A Semiconductor structure: transistor/transistor Drain-source voltage: 1kV Drain current: 59A On-state resistance: 0.105Ω Power dissipation: 1.25kW Electrical mounting: FASTON connectors; screw Technology: FREDFET; POWER MOS 7® Gate-source voltage: ±30V Topology: MOSFET half-bridge Case: SP6C |
Produkt ist nicht verfügbar |
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| APTM100AM90FG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 1kV; 59A; SP6C; Idm: 312A; 1.25kW Type of module: MOSFET transistor Mechanical mounting: screw Pulsed drain current: 312A Semiconductor structure: transistor/transistor Drain-source voltage: 1kV Drain current: 59A On-state resistance: 0.105Ω Power dissipation: 1.25kW Electrical mounting: FASTON connectors; screw Technology: FREDFET; POWER MOS 7® Gate-source voltage: ±30V Topology: MOSFET half-bridge Case: SP6C Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| APTM100DA18TG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 1kV; 33A; SP4; FASTON connectors,screw Type of module: MOSFET transistor Mechanical mounting: screw Pulsed drain current: 172A Semiconductor structure: diode/transistor Drain-source voltage: 1kV Drain current: 33A On-state resistance: 0.21Ω Power dissipation: 780W Electrical mounting: FASTON connectors; screw Technology: POWER MOS 7® Gate-source voltage: ±30V Topology: boost chopper; NTC thermistor Case: SP4 |
Produkt ist nicht verfügbar |
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| APTM100DA18TG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 1kV; 33A; SP4; FASTON connectors,screw Type of module: MOSFET transistor Mechanical mounting: screw Pulsed drain current: 172A Semiconductor structure: diode/transistor Drain-source voltage: 1kV Drain current: 33A On-state resistance: 0.21Ω Power dissipation: 780W Electrical mounting: FASTON connectors; screw Technology: POWER MOS 7® Gate-source voltage: ±30V Topology: boost chopper; NTC thermistor Case: SP4 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| APTM100DAM90G | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 1kV; 59A; SP6C; Topology: boost chopper Type of module: MOSFET transistor Mechanical mounting: screw Pulsed drain current: 312A Semiconductor structure: diode/transistor Drain-source voltage: 1kV Drain current: 59A On-state resistance: 0.105Ω Power dissipation: 1.25kW Electrical mounting: FASTON connectors; screw Technology: POWER MOS 7® Gate-source voltage: ±30V Topology: boost chopper Case: SP6C |
Produkt ist nicht verfügbar |
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| APTM100DAM90G | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 1kV; 59A; SP6C; Topology: boost chopper Type of module: MOSFET transistor Mechanical mounting: screw Pulsed drain current: 312A Semiconductor structure: diode/transistor Drain-source voltage: 1kV Drain current: 59A On-state resistance: 0.105Ω Power dissipation: 1.25kW Electrical mounting: FASTON connectors; screw Technology: POWER MOS 7® Gate-source voltage: ±30V Topology: boost chopper Case: SP6C Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| APTM100DSK35T3G | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 1kV; 17A; SP3; Press-in PCB; Idm: 88A Technology: POWER MOS 7® Semiconductor structure: diode/transistor Case: SP3 Power dissipation: 390W Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: MOSFET transistor Gate-source voltage: ±30V Topology: buck chopper x2; NTC thermistor Pulsed drain current: 88A Drain-source voltage: 1kV Drain current: 17A On-state resistance: 0.42Ω |
Produkt ist nicht verfügbar |
||
| APTM100DSK35T3G | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 1kV; 17A; SP3; Press-in PCB; Idm: 88A Technology: POWER MOS 7® Semiconductor structure: diode/transistor Case: SP3 Power dissipation: 390W Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: MOSFET transistor Gate-source voltage: ±30V Topology: buck chopper x2; NTC thermistor Pulsed drain current: 88A Drain-source voltage: 1kV Drain current: 17A On-state resistance: 0.42Ω Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||
| APTM100H18FG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 1kV; 33A; SP6C; Topology: H-bridge Type of module: MOSFET transistor Mechanical mounting: screw Pulsed drain current: 172A Semiconductor structure: transistor/transistor Drain-source voltage: 1kV Drain current: 33A On-state resistance: 0.21Ω Power dissipation: 780W Electrical mounting: FASTON connectors; screw Technology: FREDFET; POWER MOS 7® Gate-source voltage: ±30V Topology: H-bridge Case: SP6C |
Produkt ist nicht verfügbar |
||
| APTM100H18FG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 1kV; 33A; SP6C; Topology: H-bridge Type of module: MOSFET transistor Mechanical mounting: screw Pulsed drain current: 172A Semiconductor structure: transistor/transistor Drain-source voltage: 1kV Drain current: 33A On-state resistance: 0.21Ω Power dissipation: 780W Electrical mounting: FASTON connectors; screw Technology: FREDFET; POWER MOS 7® Gate-source voltage: ±30V Topology: H-bridge Case: SP6C Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||
| APTM100H35FT3G | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 1kV; 17A; SP3; Press-in PCB; 390W Type of module: MOSFET transistor Mechanical mounting: screw Pulsed drain current: 88A Semiconductor structure: transistor/transistor Drain-source voltage: 1kV Drain current: 17A On-state resistance: 0.42Ω Power dissipation: 390W Electrical mounting: Press-in PCB Technology: FREDFET; POWER MOS 7® Gate-source voltage: ±30V Topology: H-bridge; NTC thermistor Case: SP3 |
Produkt ist nicht verfügbar |
||
| APTM100H35FT3G | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 1kV; 17A; SP3; Press-in PCB; 390W Type of module: MOSFET transistor Mechanical mounting: screw Pulsed drain current: 88A Semiconductor structure: transistor/transistor Drain-source voltage: 1kV Drain current: 17A On-state resistance: 0.42Ω Power dissipation: 390W Electrical mounting: Press-in PCB Technology: FREDFET; POWER MOS 7® Gate-source voltage: ±30V Topology: H-bridge; NTC thermistor Case: SP3 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||
| APTM100H35FTG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 1kV; 17A; SP4; Idm: 88A; 390W; screw Type of module: MOSFET transistor Mechanical mounting: screw Pulsed drain current: 88A Semiconductor structure: transistor/transistor Drain-source voltage: 1kV Drain current: 17A On-state resistance: 0.42Ω Power dissipation: 390W Electrical mounting: FASTON connectors; screw Technology: FREDFET; POWER MOS 7® Gate-source voltage: ±30V Topology: H-bridge; NTC thermistor Case: SP4 |
Produkt ist nicht verfügbar |
||
| APTM100H35FTG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 1kV; 17A; SP4; Idm: 88A; 390W; screw Type of module: MOSFET transistor Mechanical mounting: screw Pulsed drain current: 88A Semiconductor structure: transistor/transistor Drain-source voltage: 1kV Drain current: 17A On-state resistance: 0.42Ω Power dissipation: 390W Electrical mounting: FASTON connectors; screw Technology: FREDFET; POWER MOS 7® Gate-source voltage: ±30V Topology: H-bridge; NTC thermistor Case: SP4 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||
| APTM100H45FT3G | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 1kV; 14A; SP3; Press-in PCB; 357W Type of module: MOSFET transistor Mechanical mounting: screw Pulsed drain current: 72A Semiconductor structure: transistor/transistor Drain-source voltage: 1kV Drain current: 14A On-state resistance: 0.54Ω Power dissipation: 357W Electrical mounting: Press-in PCB Technology: FREDFET; POWER MOS 7® Gate-source voltage: ±30V Topology: H-bridge; NTC thermistor Case: SP3 |
Produkt ist nicht verfügbar |
| APTGT75H60T3G |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge,NTC thermistor
Technology: Field Stop; Trench
Collector current: 75A
Case: SP3
Gate-emitter voltage: ±20V
Pulsed collector current: 140A
Semiconductor structure: transistor/transistor
Max. off-state voltage: 0.6kV
Application: motors
Electrical mounting: Press-in PCB
Topology: H-bridge; NTC thermistor
Mechanical mounting: screw
Type of module: IGBT
Anzahl je Verpackung: 14 Stücke
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge,NTC thermistor
Technology: Field Stop; Trench
Collector current: 75A
Case: SP3
Gate-emitter voltage: ±20V
Pulsed collector current: 140A
Semiconductor structure: transistor/transistor
Max. off-state voltage: 0.6kV
Application: motors
Electrical mounting: Press-in PCB
Topology: H-bridge; NTC thermistor
Mechanical mounting: screw
Type of module: IGBT
Anzahl je Verpackung: 14 Stücke
Produkt ist nicht verfügbar
| APTGT75SK120TG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper,NTC thermistor
Application: motors
Electrical mounting: FASTON connectors; soldering
Mechanical mounting: screw
Type of module: IGBT
Technology: Field Stop; Trench
Topology: buck chopper; NTC thermistor
Case: SP4
Max. off-state voltage: 1.2kV
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 175A
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper,NTC thermistor
Application: motors
Electrical mounting: FASTON connectors; soldering
Mechanical mounting: screw
Type of module: IGBT
Technology: Field Stop; Trench
Topology: buck chopper; NTC thermistor
Case: SP4
Max. off-state voltage: 1.2kV
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 175A
Produkt ist nicht verfügbar
| APTGT75SK120TG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper,NTC thermistor
Application: motors
Electrical mounting: FASTON connectors; soldering
Mechanical mounting: screw
Type of module: IGBT
Technology: Field Stop; Trench
Topology: buck chopper; NTC thermistor
Case: SP4
Max. off-state voltage: 1.2kV
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 175A
Anzahl je Verpackung: 13 Stücke
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper,NTC thermistor
Application: motors
Electrical mounting: FASTON connectors; soldering
Mechanical mounting: screw
Type of module: IGBT
Technology: Field Stop; Trench
Topology: buck chopper; NTC thermistor
Case: SP4
Max. off-state voltage: 1.2kV
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 175A
Anzahl je Verpackung: 13 Stücke
Produkt ist nicht verfügbar
| APTGT75TA120PG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge x3; Ic: 75A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge x3
Max. off-state voltage: 1.2kV
Collector current: 75A
Case: SP6P
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 175A
Technology: Field Stop; Trench
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge x3; Ic: 75A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge x3
Max. off-state voltage: 1.2kV
Collector current: 75A
Case: SP6P
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 175A
Technology: Field Stop; Trench
Mechanical mounting: screw
Produkt ist nicht verfügbar
| APTGT75TA120PG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge x3; Ic: 75A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge x3
Max. off-state voltage: 1.2kV
Collector current: 75A
Case: SP6P
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 175A
Technology: Field Stop; Trench
Mechanical mounting: screw
Anzahl je Verpackung: 5 Stücke
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge x3; Ic: 75A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge x3
Max. off-state voltage: 1.2kV
Collector current: 75A
Case: SP6P
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 175A
Technology: Field Stop; Trench
Mechanical mounting: screw
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
| APTGT75TDU120PG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common emitter; IGBT x6
Technology: Field Stop; Trench
Collector current: 75A
Case: SP6P
Gate-emitter voltage: ±20V
Pulsed collector current: 175A
Semiconductor structure: common emitter; transistor/transistor
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB
Topology: IGBT x6
Mechanical mounting: screw
Type of module: IGBT
Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common emitter; IGBT x6
Technology: Field Stop; Trench
Collector current: 75A
Case: SP6P
Gate-emitter voltage: ±20V
Pulsed collector current: 175A
Semiconductor structure: common emitter; transistor/transistor
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB
Topology: IGBT x6
Mechanical mounting: screw
Type of module: IGBT
Produkt ist nicht verfügbar
| APTGT75TDU120PG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common emitter; IGBT x6
Technology: Field Stop; Trench
Collector current: 75A
Case: SP6P
Gate-emitter voltage: ±20V
Pulsed collector current: 175A
Semiconductor structure: common emitter; transistor/transistor
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB
Topology: IGBT x6
Mechanical mounting: screw
Type of module: IGBT
Anzahl je Verpackung: 5 Stücke
Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common emitter; IGBT x6
Technology: Field Stop; Trench
Collector current: 75A
Case: SP6P
Gate-emitter voltage: ±20V
Pulsed collector current: 175A
Semiconductor structure: common emitter; transistor/transistor
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB
Topology: IGBT x6
Mechanical mounting: screw
Type of module: IGBT
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
| APTGT75TDU60PG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common emitter; IGBT x6
Technology: Field Stop; Trench
Collector current: 75A
Case: SP6P
Gate-emitter voltage: ±20V
Pulsed collector current: 140A
Semiconductor structure: common emitter; transistor/transistor
Max. off-state voltage: 0.6kV
Electrical mounting: Press-in PCB
Topology: IGBT x6
Mechanical mounting: screw
Type of module: IGBT
Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common emitter; IGBT x6
Technology: Field Stop; Trench
Collector current: 75A
Case: SP6P
Gate-emitter voltage: ±20V
Pulsed collector current: 140A
Semiconductor structure: common emitter; transistor/transistor
Max. off-state voltage: 0.6kV
Electrical mounting: Press-in PCB
Topology: IGBT x6
Mechanical mounting: screw
Type of module: IGBT
Produkt ist nicht verfügbar
| APTGT75TDU60PG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common emitter; IGBT x6
Technology: Field Stop; Trench
Collector current: 75A
Case: SP6P
Gate-emitter voltage: ±20V
Pulsed collector current: 140A
Semiconductor structure: common emitter; transistor/transistor
Max. off-state voltage: 0.6kV
Electrical mounting: Press-in PCB
Topology: IGBT x6
Mechanical mounting: screw
Type of module: IGBT
Anzahl je Verpackung: 7 Stücke
Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common emitter; IGBT x6
Technology: Field Stop; Trench
Collector current: 75A
Case: SP6P
Gate-emitter voltage: ±20V
Pulsed collector current: 140A
Semiconductor structure: common emitter; transistor/transistor
Max. off-state voltage: 0.6kV
Electrical mounting: Press-in PCB
Topology: IGBT x6
Mechanical mounting: screw
Type of module: IGBT
Anzahl je Verpackung: 7 Stücke
Produkt ist nicht verfügbar
| APTGT75TL60T3G |
|
Hersteller: MICROCHIP (MICROSEMI)
APTGT75TL60T3G IGBT modules
APTGT75TL60T3G IGBT modules
Produkt ist nicht verfügbar
| APTGT75X60T3G |
|
Hersteller: MICROCHIP (MICROSEMI)
APTGT75X60T3G IGBT modules
APTGT75X60T3G IGBT modules
Produkt ist nicht verfügbar
| APTGTQ100A65T1G |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 60A
Application: motors
Pulsed collector current: 200A
Semiconductor structure: transistor/transistor
Max. off-state voltage: 650V
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Case: SP1
Type of module: IGBT
Technology: Field Stop; Trench
Gate-emitter voltage: ±20V
Topology: IGBT half-bridge; NTC thermistor
Collector current: 60A
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 60A
Application: motors
Pulsed collector current: 200A
Semiconductor structure: transistor/transistor
Max. off-state voltage: 650V
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Case: SP1
Type of module: IGBT
Technology: Field Stop; Trench
Gate-emitter voltage: ±20V
Topology: IGBT half-bridge; NTC thermistor
Collector current: 60A
Produkt ist nicht verfügbar
| APTGTQ100A65T1G |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 60A
Application: motors
Pulsed collector current: 200A
Semiconductor structure: transistor/transistor
Max. off-state voltage: 650V
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Case: SP1
Type of module: IGBT
Technology: Field Stop; Trench
Gate-emitter voltage: ±20V
Topology: IGBT half-bridge; NTC thermistor
Collector current: 60A
Anzahl je Verpackung: 15 Stücke
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 60A
Application: motors
Pulsed collector current: 200A
Semiconductor structure: transistor/transistor
Max. off-state voltage: 650V
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Case: SP1
Type of module: IGBT
Technology: Field Stop; Trench
Gate-emitter voltage: ±20V
Topology: IGBT half-bridge; NTC thermistor
Collector current: 60A
Anzahl je Verpackung: 15 Stücke
Produkt ist nicht verfügbar
| APTGTQ100DA65T1G |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper,NTC thermistor
Application: motors
Pulsed collector current: 200A
Semiconductor structure: diode/transistor
Max. off-state voltage: 650V
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Case: SP1
Type of module: IGBT
Technology: Field Stop; Trench
Gate-emitter voltage: ±20V
Topology: boost chopper; NTC thermistor
Collector current: 60A
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper,NTC thermistor
Application: motors
Pulsed collector current: 200A
Semiconductor structure: diode/transistor
Max. off-state voltage: 650V
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Case: SP1
Type of module: IGBT
Technology: Field Stop; Trench
Gate-emitter voltage: ±20V
Topology: boost chopper; NTC thermistor
Collector current: 60A
Produkt ist nicht verfügbar
| APTGTQ100DA65T1G |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper,NTC thermistor
Application: motors
Pulsed collector current: 200A
Semiconductor structure: diode/transistor
Max. off-state voltage: 650V
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Case: SP1
Type of module: IGBT
Technology: Field Stop; Trench
Gate-emitter voltage: ±20V
Topology: boost chopper; NTC thermistor
Collector current: 60A
Anzahl je Verpackung: 18 Stücke
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper,NTC thermistor
Application: motors
Pulsed collector current: 200A
Semiconductor structure: diode/transistor
Max. off-state voltage: 650V
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Case: SP1
Type of module: IGBT
Technology: Field Stop; Trench
Gate-emitter voltage: ±20V
Topology: boost chopper; NTC thermistor
Collector current: 60A
Anzahl je Verpackung: 18 Stücke
Produkt ist nicht verfügbar
| APTGTQ100DDA65T3G |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper x2,NTC thermistor
Application: motors
Pulsed collector current: 200A
Semiconductor structure: diode/transistor
Max. off-state voltage: 650V
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Case: SP3F
Type of module: IGBT
Technology: Field Stop; Trench
Gate-emitter voltage: ±20V
Topology: boost chopper x2; NTC thermistor
Collector current: 60A
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper x2,NTC thermistor
Application: motors
Pulsed collector current: 200A
Semiconductor structure: diode/transistor
Max. off-state voltage: 650V
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Case: SP3F
Type of module: IGBT
Technology: Field Stop; Trench
Gate-emitter voltage: ±20V
Topology: boost chopper x2; NTC thermistor
Collector current: 60A
Produkt ist nicht verfügbar
| APTGTQ100DDA65T3G |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper x2,NTC thermistor
Application: motors
Pulsed collector current: 200A
Semiconductor structure: diode/transistor
Max. off-state voltage: 650V
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Case: SP3F
Type of module: IGBT
Technology: Field Stop; Trench
Gate-emitter voltage: ±20V
Topology: boost chopper x2; NTC thermistor
Collector current: 60A
Anzahl je Verpackung: 13 Stücke
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper x2,NTC thermistor
Application: motors
Pulsed collector current: 200A
Semiconductor structure: diode/transistor
Max. off-state voltage: 650V
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Case: SP3F
Type of module: IGBT
Technology: Field Stop; Trench
Gate-emitter voltage: ±20V
Topology: boost chopper x2; NTC thermistor
Collector current: 60A
Anzahl je Verpackung: 13 Stücke
Produkt ist nicht verfügbar
| APTGTQ100H65T3G |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge,NTC thermistor
Application: motors
Pulsed collector current: 200A
Semiconductor structure: transistor/transistor
Max. off-state voltage: 650V
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Case: SP3F
Type of module: IGBT
Technology: Field Stop; Trench
Gate-emitter voltage: ±20V
Topology: H-bridge; NTC thermistor
Collector current: 60A
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge,NTC thermistor
Application: motors
Pulsed collector current: 200A
Semiconductor structure: transistor/transistor
Max. off-state voltage: 650V
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Case: SP3F
Type of module: IGBT
Technology: Field Stop; Trench
Gate-emitter voltage: ±20V
Topology: H-bridge; NTC thermistor
Collector current: 60A
Produkt ist nicht verfügbar
| APTGTQ100H65T3G |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge,NTC thermistor
Application: motors
Pulsed collector current: 200A
Semiconductor structure: transistor/transistor
Max. off-state voltage: 650V
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Case: SP3F
Type of module: IGBT
Technology: Field Stop; Trench
Gate-emitter voltage: ±20V
Topology: H-bridge; NTC thermistor
Collector current: 60A
Anzahl je Verpackung: 1 Stücke
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge,NTC thermistor
Application: motors
Pulsed collector current: 200A
Semiconductor structure: transistor/transistor
Max. off-state voltage: 650V
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Case: SP3F
Type of module: IGBT
Technology: Field Stop; Trench
Gate-emitter voltage: ±20V
Topology: H-bridge; NTC thermistor
Collector current: 60A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APTGTQ100SK65T1G |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper,NTC thermistor
Application: motors
Pulsed collector current: 200A
Semiconductor structure: diode/transistor
Max. off-state voltage: 650V
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Case: SP1
Type of module: IGBT
Technology: Field Stop; Trench
Gate-emitter voltage: ±20V
Topology: buck chopper; NTC thermistor
Collector current: 60A
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper,NTC thermistor
Application: motors
Pulsed collector current: 200A
Semiconductor structure: diode/transistor
Max. off-state voltage: 650V
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Case: SP1
Type of module: IGBT
Technology: Field Stop; Trench
Gate-emitter voltage: ±20V
Topology: buck chopper; NTC thermistor
Collector current: 60A
Produkt ist nicht verfügbar
| APTGTQ100SK65T1G |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper,NTC thermistor
Application: motors
Pulsed collector current: 200A
Semiconductor structure: diode/transistor
Max. off-state voltage: 650V
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Case: SP1
Type of module: IGBT
Technology: Field Stop; Trench
Gate-emitter voltage: ±20V
Topology: buck chopper; NTC thermistor
Collector current: 60A
Anzahl je Verpackung: 18 Stücke
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper,NTC thermistor
Application: motors
Pulsed collector current: 200A
Semiconductor structure: diode/transistor
Max. off-state voltage: 650V
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Case: SP1
Type of module: IGBT
Technology: Field Stop; Trench
Gate-emitter voltage: ±20V
Topology: buck chopper; NTC thermistor
Collector current: 60A
Anzahl je Verpackung: 18 Stücke
Produkt ist nicht verfügbar
| APTGTQ150TA65TPG |
|
Hersteller: MICROCHIP (MICROSEMI)
APTGTQ150TA65TPG IGBT modules
APTGTQ150TA65TPG IGBT modules
Produkt ist nicht verfügbar
| APTGTQ200A65T3G |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 120A
Application: motors
Case: SP3F
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: Field Stop; Trench
Topology: IGBT half-bridge; NTC thermistor
Max. off-state voltage: 650V
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 120A
Pulsed collector current: 400A
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 120A
Application: motors
Case: SP3F
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: Field Stop; Trench
Topology: IGBT half-bridge; NTC thermistor
Max. off-state voltage: 650V
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 120A
Pulsed collector current: 400A
Produkt ist nicht verfügbar
| APTGTQ200A65T3G |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 120A
Application: motors
Case: SP3F
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: Field Stop; Trench
Topology: IGBT half-bridge; NTC thermistor
Max. off-state voltage: 650V
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 120A
Pulsed collector current: 400A
Anzahl je Verpackung: 1 Stücke
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 120A
Application: motors
Case: SP3F
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: Field Stop; Trench
Topology: IGBT half-bridge; NTC thermistor
Max. off-state voltage: 650V
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 120A
Pulsed collector current: 400A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APTGTQ200DA65T3G |
|
Hersteller: MICROCHIP (MICROSEMI)
APTGTQ200DA65T3G IGBT modules
APTGTQ200DA65T3G IGBT modules
Produkt ist nicht verfügbar
| APTGTQ200SK65T3G |
|
Hersteller: MICROCHIP (MICROSEMI)
APTGTQ200SK65T3G IGBT modules
APTGTQ200SK65T3G IGBT modules
Produkt ist nicht verfügbar
| APTGTQ50TA65T3G |
|
Hersteller: MICROCHIP (MICROSEMI)
APTGTQ50TA65T3G IGBT modules
APTGTQ50TA65T3G IGBT modules
Produkt ist nicht verfügbar
| APTLGL325A1208G |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IPM; IGBT half-bridge; LP8; for UPS,motors,SMPS; 1.2kV
Application: for UPS; motors; SMPS
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Case: LP8
Technology: Field Stop; Trench
Output current: 325A
Type of module: IPM
Frequency: 50kHz
Topology: IGBT half-bridge
Mounting: pin header; screw
Voltage class: 1.2kV
Kind of output: IGBT driver
Integrated circuit features: integrated DC/DC converter
Category: IGBT modules
Description: Module: IPM; IGBT half-bridge; LP8; for UPS,motors,SMPS; 1.2kV
Application: for UPS; motors; SMPS
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Case: LP8
Technology: Field Stop; Trench
Output current: 325A
Type of module: IPM
Frequency: 50kHz
Topology: IGBT half-bridge
Mounting: pin header; screw
Voltage class: 1.2kV
Kind of output: IGBT driver
Integrated circuit features: integrated DC/DC converter
Produkt ist nicht verfügbar
| APTLGL325A1208G |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IPM; IGBT half-bridge; LP8; for UPS,motors,SMPS; 1.2kV
Application: for UPS; motors; SMPS
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Case: LP8
Technology: Field Stop; Trench
Output current: 325A
Type of module: IPM
Frequency: 50kHz
Topology: IGBT half-bridge
Mounting: pin header; screw
Voltage class: 1.2kV
Kind of output: IGBT driver
Integrated circuit features: integrated DC/DC converter
Anzahl je Verpackung: 3 Stücke
Category: IGBT modules
Description: Module: IPM; IGBT half-bridge; LP8; for UPS,motors,SMPS; 1.2kV
Application: for UPS; motors; SMPS
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Case: LP8
Technology: Field Stop; Trench
Output current: 325A
Type of module: IPM
Frequency: 50kHz
Topology: IGBT half-bridge
Mounting: pin header; screw
Voltage class: 1.2kV
Kind of output: IGBT driver
Integrated circuit features: integrated DC/DC converter
Anzahl je Verpackung: 3 Stücke
Produkt ist nicht verfügbar
| APTLGT300A1208G |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IPM; IGBT half-bridge; LP8; for UPS,motors,SMPS; 1.2kV
Application: for UPS; motors; SMPS
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Case: LP8
Technology: Field Stop; Trench
Output current: 300A
Type of module: IPM
Frequency: 45kHz
Topology: IGBT half-bridge
Mounting: pin header; screw
Voltage class: 1.2kV
Kind of output: IGBT driver
Integrated circuit features: integrated DC/DC converter
Category: IGBT modules
Description: Module: IPM; IGBT half-bridge; LP8; for UPS,motors,SMPS; 1.2kV
Application: for UPS; motors; SMPS
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Case: LP8
Technology: Field Stop; Trench
Output current: 300A
Type of module: IPM
Frequency: 45kHz
Topology: IGBT half-bridge
Mounting: pin header; screw
Voltage class: 1.2kV
Kind of output: IGBT driver
Integrated circuit features: integrated DC/DC converter
Produkt ist nicht verfügbar
| APTLGT300A1208G |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IPM; IGBT half-bridge; LP8; for UPS,motors,SMPS; 1.2kV
Application: for UPS; motors; SMPS
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Case: LP8
Technology: Field Stop; Trench
Output current: 300A
Type of module: IPM
Frequency: 45kHz
Topology: IGBT half-bridge
Mounting: pin header; screw
Voltage class: 1.2kV
Kind of output: IGBT driver
Integrated circuit features: integrated DC/DC converter
Anzahl je Verpackung: 3 Stücke
Category: IGBT modules
Description: Module: IPM; IGBT half-bridge; LP8; for UPS,motors,SMPS; 1.2kV
Application: for UPS; motors; SMPS
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Case: LP8
Technology: Field Stop; Trench
Output current: 300A
Type of module: IPM
Frequency: 45kHz
Topology: IGBT half-bridge
Mounting: pin header; screw
Voltage class: 1.2kV
Kind of output: IGBT driver
Integrated circuit features: integrated DC/DC converter
Anzahl je Verpackung: 3 Stücke
Produkt ist nicht verfügbar
| APTLGT400A608G |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IPM; IGBT half-bridge; LP8; for UPS,motors,SMPS; 600V
Application: for UPS; motors; SMPS
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Case: LP8
Technology: Field Stop; NPT; Trench
Output current: 400A
Type of module: IPM
Frequency: 45kHz
Topology: IGBT half-bridge
Mounting: pin header; screw
Voltage class: 600V
Kind of output: IGBT driver
Integrated circuit features: integrated DC/DC converter
Category: IGBT modules
Description: Module: IPM; IGBT half-bridge; LP8; for UPS,motors,SMPS; 600V
Application: for UPS; motors; SMPS
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Case: LP8
Technology: Field Stop; NPT; Trench
Output current: 400A
Type of module: IPM
Frequency: 45kHz
Topology: IGBT half-bridge
Mounting: pin header; screw
Voltage class: 600V
Kind of output: IGBT driver
Integrated circuit features: integrated DC/DC converter
Produkt ist nicht verfügbar
| APTLGT400A608G |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IPM; IGBT half-bridge; LP8; for UPS,motors,SMPS; 600V
Application: for UPS; motors; SMPS
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Case: LP8
Technology: Field Stop; NPT; Trench
Output current: 400A
Type of module: IPM
Frequency: 45kHz
Topology: IGBT half-bridge
Mounting: pin header; screw
Voltage class: 600V
Kind of output: IGBT driver
Integrated circuit features: integrated DC/DC converter
Anzahl je Verpackung: 3 Stücke
Category: IGBT modules
Description: Module: IPM; IGBT half-bridge; LP8; for UPS,motors,SMPS; 600V
Application: for UPS; motors; SMPS
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Case: LP8
Technology: Field Stop; NPT; Trench
Output current: 400A
Type of module: IPM
Frequency: 45kHz
Topology: IGBT half-bridge
Mounting: pin header; screw
Voltage class: 600V
Kind of output: IGBT driver
Integrated circuit features: integrated DC/DC converter
Anzahl je Verpackung: 3 Stücke
Produkt ist nicht verfügbar
| APTM08TAM04PG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 75V; 90A; SP6P; Press-in PCB; 138W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Gate-source voltage: ±30V
Topology: MOSFET x3 half-bridge
Pulsed drain current: 250A
Case: SP6P
Semiconductor structure: transistor/transistor
Drain-source voltage: 75V
Drain current: 90A
On-state resistance: 4.5mΩ
Power dissipation: 138W
Type of module: MOSFET transistor
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 75V; 90A; SP6P; Press-in PCB; 138W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Gate-source voltage: ±30V
Topology: MOSFET x3 half-bridge
Pulsed drain current: 250A
Case: SP6P
Semiconductor structure: transistor/transistor
Drain-source voltage: 75V
Drain current: 90A
On-state resistance: 4.5mΩ
Power dissipation: 138W
Type of module: MOSFET transistor
Produkt ist nicht verfügbar
| APTM08TAM04PG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 75V; 90A; SP6P; Press-in PCB; 138W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Gate-source voltage: ±30V
Topology: MOSFET x3 half-bridge
Pulsed drain current: 250A
Case: SP6P
Semiconductor structure: transistor/transistor
Drain-source voltage: 75V
Drain current: 90A
On-state resistance: 4.5mΩ
Power dissipation: 138W
Type of module: MOSFET transistor
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 75V; 90A; SP6P; Press-in PCB; 138W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Gate-source voltage: ±30V
Topology: MOSFET x3 half-bridge
Pulsed drain current: 250A
Case: SP6P
Semiconductor structure: transistor/transistor
Drain-source voltage: 75V
Drain current: 90A
On-state resistance: 4.5mΩ
Power dissipation: 138W
Type of module: MOSFET transistor
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APTM100A13DG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 1kV; 49A; SP6C; FASTON connectors,screw
Type of module: MOSFET transistor
Mechanical mounting: screw
Pulsed drain current: 240A
Semiconductor structure: diode/transistor
Drain-source voltage: 1kV
Drain current: 49A
On-state resistance: 156mΩ
Power dissipation: 1.25kW
Electrical mounting: FASTON connectors; screw
Technology: POWER MOS 7®
Gate-source voltage: ±30V
Topology: MOSFET half-bridge + serial diodes
Case: SP6C
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 1kV; 49A; SP6C; FASTON connectors,screw
Type of module: MOSFET transistor
Mechanical mounting: screw
Pulsed drain current: 240A
Semiconductor structure: diode/transistor
Drain-source voltage: 1kV
Drain current: 49A
On-state resistance: 156mΩ
Power dissipation: 1.25kW
Electrical mounting: FASTON connectors; screw
Technology: POWER MOS 7®
Gate-source voltage: ±30V
Topology: MOSFET half-bridge + serial diodes
Case: SP6C
Produkt ist nicht verfügbar
| APTM100A13DG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 1kV; 49A; SP6C; FASTON connectors,screw
Type of module: MOSFET transistor
Mechanical mounting: screw
Pulsed drain current: 240A
Semiconductor structure: diode/transistor
Drain-source voltage: 1kV
Drain current: 49A
On-state resistance: 156mΩ
Power dissipation: 1.25kW
Electrical mounting: FASTON connectors; screw
Technology: POWER MOS 7®
Gate-source voltage: ±30V
Topology: MOSFET half-bridge + serial diodes
Case: SP6C
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 1kV; 49A; SP6C; FASTON connectors,screw
Type of module: MOSFET transistor
Mechanical mounting: screw
Pulsed drain current: 240A
Semiconductor structure: diode/transistor
Drain-source voltage: 1kV
Drain current: 49A
On-state resistance: 156mΩ
Power dissipation: 1.25kW
Electrical mounting: FASTON connectors; screw
Technology: POWER MOS 7®
Gate-source voltage: ±30V
Topology: MOSFET half-bridge + serial diodes
Case: SP6C
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APTM100A13SCG |
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1kV; 49A; SP6C; Idm: 240A; 1.25kW
Semiconductor structure: SiC diode/transistor
Case: SP6C
Power dissipation: 1.25kW
Technology: POWER MOS 7®; SiC
Drain-source voltage: 1kV
Drain current: 49A
On-state resistance: 156mΩ
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Gate-source voltage: ±30V
Topology: MOSFET half-bridge + serial diodes + parrallel diodes
Pulsed drain current: 240A
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1kV; 49A; SP6C; Idm: 240A; 1.25kW
Semiconductor structure: SiC diode/transistor
Case: SP6C
Power dissipation: 1.25kW
Technology: POWER MOS 7®; SiC
Drain-source voltage: 1kV
Drain current: 49A
On-state resistance: 156mΩ
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Gate-source voltage: ±30V
Topology: MOSFET half-bridge + serial diodes + parrallel diodes
Pulsed drain current: 240A
Produkt ist nicht verfügbar
| APTM100A13SCG |
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1kV; 49A; SP6C; Idm: 240A; 1.25kW
Semiconductor structure: SiC diode/transistor
Case: SP6C
Power dissipation: 1.25kW
Technology: POWER MOS 7®; SiC
Drain-source voltage: 1kV
Drain current: 49A
On-state resistance: 156mΩ
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Gate-source voltage: ±30V
Topology: MOSFET half-bridge + serial diodes + parrallel diodes
Pulsed drain current: 240A
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1kV; 49A; SP6C; Idm: 240A; 1.25kW
Semiconductor structure: SiC diode/transistor
Case: SP6C
Power dissipation: 1.25kW
Technology: POWER MOS 7®; SiC
Drain-source voltage: 1kV
Drain current: 49A
On-state resistance: 156mΩ
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Gate-source voltage: ±30V
Topology: MOSFET half-bridge + serial diodes + parrallel diodes
Pulsed drain current: 240A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APTM100A13SG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 1kV; 49A; SP6C; FASTON connectors,screw
Semiconductor structure: diode/transistor
Case: SP6C
Power dissipation: 1.25kW
Technology: POWER MOS 7®
Drain-source voltage: 1kV
Drain current: 49A
On-state resistance: 156mΩ
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Gate-source voltage: ±30V
Topology: MOSFET half-bridge + serial diodes + parrallel diodes
Pulsed drain current: 240A
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 1kV; 49A; SP6C; FASTON connectors,screw
Semiconductor structure: diode/transistor
Case: SP6C
Power dissipation: 1.25kW
Technology: POWER MOS 7®
Drain-source voltage: 1kV
Drain current: 49A
On-state resistance: 156mΩ
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Gate-source voltage: ±30V
Topology: MOSFET half-bridge + serial diodes + parrallel diodes
Pulsed drain current: 240A
Produkt ist nicht verfügbar
| APTM100A13SG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 1kV; 49A; SP6C; FASTON connectors,screw
Semiconductor structure: diode/transistor
Case: SP6C
Power dissipation: 1.25kW
Technology: POWER MOS 7®
Drain-source voltage: 1kV
Drain current: 49A
On-state resistance: 156mΩ
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Gate-source voltage: ±30V
Topology: MOSFET half-bridge + serial diodes + parrallel diodes
Pulsed drain current: 240A
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 1kV; 49A; SP6C; FASTON connectors,screw
Semiconductor structure: diode/transistor
Case: SP6C
Power dissipation: 1.25kW
Technology: POWER MOS 7®
Drain-source voltage: 1kV
Drain current: 49A
On-state resistance: 156mΩ
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Gate-source voltage: ±30V
Topology: MOSFET half-bridge + serial diodes + parrallel diodes
Pulsed drain current: 240A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APTM100A18FTG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1kV; 33A; SP4; Idm: 172A; 780W; screw
Type of module: MOSFET transistor
Mechanical mounting: screw
Pulsed drain current: 172A
Semiconductor structure: transistor/transistor
Drain-source voltage: 1kV
Drain current: 33A
On-state resistance: 0.21Ω
Power dissipation: 780W
Electrical mounting: FASTON connectors; screw
Technology: FREDFET; POWER MOS 7®
Gate-source voltage: ±30V
Topology: MOSFET half-bridge; NTC thermistor
Case: SP4
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1kV; 33A; SP4; Idm: 172A; 780W; screw
Type of module: MOSFET transistor
Mechanical mounting: screw
Pulsed drain current: 172A
Semiconductor structure: transistor/transistor
Drain-source voltage: 1kV
Drain current: 33A
On-state resistance: 0.21Ω
Power dissipation: 780W
Electrical mounting: FASTON connectors; screw
Technology: FREDFET; POWER MOS 7®
Gate-source voltage: ±30V
Topology: MOSFET half-bridge; NTC thermistor
Case: SP4
Produkt ist nicht verfügbar
| APTM100A18FTG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1kV; 33A; SP4; Idm: 172A; 780W; screw
Type of module: MOSFET transistor
Mechanical mounting: screw
Pulsed drain current: 172A
Semiconductor structure: transistor/transistor
Drain-source voltage: 1kV
Drain current: 33A
On-state resistance: 0.21Ω
Power dissipation: 780W
Electrical mounting: FASTON connectors; screw
Technology: FREDFET; POWER MOS 7®
Gate-source voltage: ±30V
Topology: MOSFET half-bridge; NTC thermistor
Case: SP4
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1kV; 33A; SP4; Idm: 172A; 780W; screw
Type of module: MOSFET transistor
Mechanical mounting: screw
Pulsed drain current: 172A
Semiconductor structure: transistor/transistor
Drain-source voltage: 1kV
Drain current: 33A
On-state resistance: 0.21Ω
Power dissipation: 780W
Electrical mounting: FASTON connectors; screw
Technology: FREDFET; POWER MOS 7®
Gate-source voltage: ±30V
Topology: MOSFET half-bridge; NTC thermistor
Case: SP4
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APTM100A23STG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 1kV; 27A; SP4; FASTON connectors,screw
Semiconductor structure: diode/transistor
Case: SP4
Power dissipation: 694W
Technology: POWER MOS 7®
Drain-source voltage: 1kV
Drain current: 27A
On-state resistance: 0.27Ω
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Gate-source voltage: ±30V
Topology: MOSFET half-bridge + serial diodes + parrallel diodes; NTC thermistor
Pulsed drain current: 144A
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 1kV; 27A; SP4; FASTON connectors,screw
Semiconductor structure: diode/transistor
Case: SP4
Power dissipation: 694W
Technology: POWER MOS 7®
Drain-source voltage: 1kV
Drain current: 27A
On-state resistance: 0.27Ω
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Gate-source voltage: ±30V
Topology: MOSFET half-bridge + serial diodes + parrallel diodes; NTC thermistor
Pulsed drain current: 144A
Produkt ist nicht verfügbar
| APTM100A23STG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 1kV; 27A; SP4; FASTON connectors,screw
Semiconductor structure: diode/transistor
Case: SP4
Power dissipation: 694W
Technology: POWER MOS 7®
Drain-source voltage: 1kV
Drain current: 27A
On-state resistance: 0.27Ω
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Gate-source voltage: ±30V
Topology: MOSFET half-bridge + serial diodes + parrallel diodes; NTC thermistor
Pulsed drain current: 144A
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 1kV; 27A; SP4; FASTON connectors,screw
Semiconductor structure: diode/transistor
Case: SP4
Power dissipation: 694W
Technology: POWER MOS 7®
Drain-source voltage: 1kV
Drain current: 27A
On-state resistance: 0.27Ω
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Gate-source voltage: ±30V
Topology: MOSFET half-bridge + serial diodes + parrallel diodes; NTC thermistor
Pulsed drain current: 144A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APTM100AM90FG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1kV; 59A; SP6C; Idm: 312A; 1.25kW
Type of module: MOSFET transistor
Mechanical mounting: screw
Pulsed drain current: 312A
Semiconductor structure: transistor/transistor
Drain-source voltage: 1kV
Drain current: 59A
On-state resistance: 0.105Ω
Power dissipation: 1.25kW
Electrical mounting: FASTON connectors; screw
Technology: FREDFET; POWER MOS 7®
Gate-source voltage: ±30V
Topology: MOSFET half-bridge
Case: SP6C
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1kV; 59A; SP6C; Idm: 312A; 1.25kW
Type of module: MOSFET transistor
Mechanical mounting: screw
Pulsed drain current: 312A
Semiconductor structure: transistor/transistor
Drain-source voltage: 1kV
Drain current: 59A
On-state resistance: 0.105Ω
Power dissipation: 1.25kW
Electrical mounting: FASTON connectors; screw
Technology: FREDFET; POWER MOS 7®
Gate-source voltage: ±30V
Topology: MOSFET half-bridge
Case: SP6C
Produkt ist nicht verfügbar
| APTM100AM90FG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1kV; 59A; SP6C; Idm: 312A; 1.25kW
Type of module: MOSFET transistor
Mechanical mounting: screw
Pulsed drain current: 312A
Semiconductor structure: transistor/transistor
Drain-source voltage: 1kV
Drain current: 59A
On-state resistance: 0.105Ω
Power dissipation: 1.25kW
Electrical mounting: FASTON connectors; screw
Technology: FREDFET; POWER MOS 7®
Gate-source voltage: ±30V
Topology: MOSFET half-bridge
Case: SP6C
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1kV; 59A; SP6C; Idm: 312A; 1.25kW
Type of module: MOSFET transistor
Mechanical mounting: screw
Pulsed drain current: 312A
Semiconductor structure: transistor/transistor
Drain-source voltage: 1kV
Drain current: 59A
On-state resistance: 0.105Ω
Power dissipation: 1.25kW
Electrical mounting: FASTON connectors; screw
Technology: FREDFET; POWER MOS 7®
Gate-source voltage: ±30V
Topology: MOSFET half-bridge
Case: SP6C
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APTM100DA18TG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 1kV; 33A; SP4; FASTON connectors,screw
Type of module: MOSFET transistor
Mechanical mounting: screw
Pulsed drain current: 172A
Semiconductor structure: diode/transistor
Drain-source voltage: 1kV
Drain current: 33A
On-state resistance: 0.21Ω
Power dissipation: 780W
Electrical mounting: FASTON connectors; screw
Technology: POWER MOS 7®
Gate-source voltage: ±30V
Topology: boost chopper; NTC thermistor
Case: SP4
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 1kV; 33A; SP4; FASTON connectors,screw
Type of module: MOSFET transistor
Mechanical mounting: screw
Pulsed drain current: 172A
Semiconductor structure: diode/transistor
Drain-source voltage: 1kV
Drain current: 33A
On-state resistance: 0.21Ω
Power dissipation: 780W
Electrical mounting: FASTON connectors; screw
Technology: POWER MOS 7®
Gate-source voltage: ±30V
Topology: boost chopper; NTC thermistor
Case: SP4
Produkt ist nicht verfügbar
| APTM100DA18TG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 1kV; 33A; SP4; FASTON connectors,screw
Type of module: MOSFET transistor
Mechanical mounting: screw
Pulsed drain current: 172A
Semiconductor structure: diode/transistor
Drain-source voltage: 1kV
Drain current: 33A
On-state resistance: 0.21Ω
Power dissipation: 780W
Electrical mounting: FASTON connectors; screw
Technology: POWER MOS 7®
Gate-source voltage: ±30V
Topology: boost chopper; NTC thermistor
Case: SP4
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 1kV; 33A; SP4; FASTON connectors,screw
Type of module: MOSFET transistor
Mechanical mounting: screw
Pulsed drain current: 172A
Semiconductor structure: diode/transistor
Drain-source voltage: 1kV
Drain current: 33A
On-state resistance: 0.21Ω
Power dissipation: 780W
Electrical mounting: FASTON connectors; screw
Technology: POWER MOS 7®
Gate-source voltage: ±30V
Topology: boost chopper; NTC thermistor
Case: SP4
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APTM100DAM90G |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 1kV; 59A; SP6C; Topology: boost chopper
Type of module: MOSFET transistor
Mechanical mounting: screw
Pulsed drain current: 312A
Semiconductor structure: diode/transistor
Drain-source voltage: 1kV
Drain current: 59A
On-state resistance: 0.105Ω
Power dissipation: 1.25kW
Electrical mounting: FASTON connectors; screw
Technology: POWER MOS 7®
Gate-source voltage: ±30V
Topology: boost chopper
Case: SP6C
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 1kV; 59A; SP6C; Topology: boost chopper
Type of module: MOSFET transistor
Mechanical mounting: screw
Pulsed drain current: 312A
Semiconductor structure: diode/transistor
Drain-source voltage: 1kV
Drain current: 59A
On-state resistance: 0.105Ω
Power dissipation: 1.25kW
Electrical mounting: FASTON connectors; screw
Technology: POWER MOS 7®
Gate-source voltage: ±30V
Topology: boost chopper
Case: SP6C
Produkt ist nicht verfügbar
| APTM100DAM90G |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 1kV; 59A; SP6C; Topology: boost chopper
Type of module: MOSFET transistor
Mechanical mounting: screw
Pulsed drain current: 312A
Semiconductor structure: diode/transistor
Drain-source voltage: 1kV
Drain current: 59A
On-state resistance: 0.105Ω
Power dissipation: 1.25kW
Electrical mounting: FASTON connectors; screw
Technology: POWER MOS 7®
Gate-source voltage: ±30V
Topology: boost chopper
Case: SP6C
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 1kV; 59A; SP6C; Topology: boost chopper
Type of module: MOSFET transistor
Mechanical mounting: screw
Pulsed drain current: 312A
Semiconductor structure: diode/transistor
Drain-source voltage: 1kV
Drain current: 59A
On-state resistance: 0.105Ω
Power dissipation: 1.25kW
Electrical mounting: FASTON connectors; screw
Technology: POWER MOS 7®
Gate-source voltage: ±30V
Topology: boost chopper
Case: SP6C
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APTM100DSK35T3G |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 1kV; 17A; SP3; Press-in PCB; Idm: 88A
Technology: POWER MOS 7®
Semiconductor structure: diode/transistor
Case: SP3
Power dissipation: 390W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Gate-source voltage: ±30V
Topology: buck chopper x2; NTC thermistor
Pulsed drain current: 88A
Drain-source voltage: 1kV
Drain current: 17A
On-state resistance: 0.42Ω
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 1kV; 17A; SP3; Press-in PCB; Idm: 88A
Technology: POWER MOS 7®
Semiconductor structure: diode/transistor
Case: SP3
Power dissipation: 390W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Gate-source voltage: ±30V
Topology: buck chopper x2; NTC thermistor
Pulsed drain current: 88A
Drain-source voltage: 1kV
Drain current: 17A
On-state resistance: 0.42Ω
Produkt ist nicht verfügbar
| APTM100DSK35T3G |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 1kV; 17A; SP3; Press-in PCB; Idm: 88A
Technology: POWER MOS 7®
Semiconductor structure: diode/transistor
Case: SP3
Power dissipation: 390W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Gate-source voltage: ±30V
Topology: buck chopper x2; NTC thermistor
Pulsed drain current: 88A
Drain-source voltage: 1kV
Drain current: 17A
On-state resistance: 0.42Ω
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 1kV; 17A; SP3; Press-in PCB; Idm: 88A
Technology: POWER MOS 7®
Semiconductor structure: diode/transistor
Case: SP3
Power dissipation: 390W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Gate-source voltage: ±30V
Topology: buck chopper x2; NTC thermistor
Pulsed drain current: 88A
Drain-source voltage: 1kV
Drain current: 17A
On-state resistance: 0.42Ω
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APTM100H18FG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1kV; 33A; SP6C; Topology: H-bridge
Type of module: MOSFET transistor
Mechanical mounting: screw
Pulsed drain current: 172A
Semiconductor structure: transistor/transistor
Drain-source voltage: 1kV
Drain current: 33A
On-state resistance: 0.21Ω
Power dissipation: 780W
Electrical mounting: FASTON connectors; screw
Technology: FREDFET; POWER MOS 7®
Gate-source voltage: ±30V
Topology: H-bridge
Case: SP6C
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1kV; 33A; SP6C; Topology: H-bridge
Type of module: MOSFET transistor
Mechanical mounting: screw
Pulsed drain current: 172A
Semiconductor structure: transistor/transistor
Drain-source voltage: 1kV
Drain current: 33A
On-state resistance: 0.21Ω
Power dissipation: 780W
Electrical mounting: FASTON connectors; screw
Technology: FREDFET; POWER MOS 7®
Gate-source voltage: ±30V
Topology: H-bridge
Case: SP6C
Produkt ist nicht verfügbar
| APTM100H18FG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1kV; 33A; SP6C; Topology: H-bridge
Type of module: MOSFET transistor
Mechanical mounting: screw
Pulsed drain current: 172A
Semiconductor structure: transistor/transistor
Drain-source voltage: 1kV
Drain current: 33A
On-state resistance: 0.21Ω
Power dissipation: 780W
Electrical mounting: FASTON connectors; screw
Technology: FREDFET; POWER MOS 7®
Gate-source voltage: ±30V
Topology: H-bridge
Case: SP6C
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1kV; 33A; SP6C; Topology: H-bridge
Type of module: MOSFET transistor
Mechanical mounting: screw
Pulsed drain current: 172A
Semiconductor structure: transistor/transistor
Drain-source voltage: 1kV
Drain current: 33A
On-state resistance: 0.21Ω
Power dissipation: 780W
Electrical mounting: FASTON connectors; screw
Technology: FREDFET; POWER MOS 7®
Gate-source voltage: ±30V
Topology: H-bridge
Case: SP6C
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APTM100H35FT3G |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1kV; 17A; SP3; Press-in PCB; 390W
Type of module: MOSFET transistor
Mechanical mounting: screw
Pulsed drain current: 88A
Semiconductor structure: transistor/transistor
Drain-source voltage: 1kV
Drain current: 17A
On-state resistance: 0.42Ω
Power dissipation: 390W
Electrical mounting: Press-in PCB
Technology: FREDFET; POWER MOS 7®
Gate-source voltage: ±30V
Topology: H-bridge; NTC thermistor
Case: SP3
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1kV; 17A; SP3; Press-in PCB; 390W
Type of module: MOSFET transistor
Mechanical mounting: screw
Pulsed drain current: 88A
Semiconductor structure: transistor/transistor
Drain-source voltage: 1kV
Drain current: 17A
On-state resistance: 0.42Ω
Power dissipation: 390W
Electrical mounting: Press-in PCB
Technology: FREDFET; POWER MOS 7®
Gate-source voltage: ±30V
Topology: H-bridge; NTC thermistor
Case: SP3
Produkt ist nicht verfügbar
| APTM100H35FT3G |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1kV; 17A; SP3; Press-in PCB; 390W
Type of module: MOSFET transistor
Mechanical mounting: screw
Pulsed drain current: 88A
Semiconductor structure: transistor/transistor
Drain-source voltage: 1kV
Drain current: 17A
On-state resistance: 0.42Ω
Power dissipation: 390W
Electrical mounting: Press-in PCB
Technology: FREDFET; POWER MOS 7®
Gate-source voltage: ±30V
Topology: H-bridge; NTC thermistor
Case: SP3
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1kV; 17A; SP3; Press-in PCB; 390W
Type of module: MOSFET transistor
Mechanical mounting: screw
Pulsed drain current: 88A
Semiconductor structure: transistor/transistor
Drain-source voltage: 1kV
Drain current: 17A
On-state resistance: 0.42Ω
Power dissipation: 390W
Electrical mounting: Press-in PCB
Technology: FREDFET; POWER MOS 7®
Gate-source voltage: ±30V
Topology: H-bridge; NTC thermistor
Case: SP3
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APTM100H35FTG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1kV; 17A; SP4; Idm: 88A; 390W; screw
Type of module: MOSFET transistor
Mechanical mounting: screw
Pulsed drain current: 88A
Semiconductor structure: transistor/transistor
Drain-source voltage: 1kV
Drain current: 17A
On-state resistance: 0.42Ω
Power dissipation: 390W
Electrical mounting: FASTON connectors; screw
Technology: FREDFET; POWER MOS 7®
Gate-source voltage: ±30V
Topology: H-bridge; NTC thermistor
Case: SP4
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1kV; 17A; SP4; Idm: 88A; 390W; screw
Type of module: MOSFET transistor
Mechanical mounting: screw
Pulsed drain current: 88A
Semiconductor structure: transistor/transistor
Drain-source voltage: 1kV
Drain current: 17A
On-state resistance: 0.42Ω
Power dissipation: 390W
Electrical mounting: FASTON connectors; screw
Technology: FREDFET; POWER MOS 7®
Gate-source voltage: ±30V
Topology: H-bridge; NTC thermistor
Case: SP4
Produkt ist nicht verfügbar
| APTM100H35FTG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1kV; 17A; SP4; Idm: 88A; 390W; screw
Type of module: MOSFET transistor
Mechanical mounting: screw
Pulsed drain current: 88A
Semiconductor structure: transistor/transistor
Drain-source voltage: 1kV
Drain current: 17A
On-state resistance: 0.42Ω
Power dissipation: 390W
Electrical mounting: FASTON connectors; screw
Technology: FREDFET; POWER MOS 7®
Gate-source voltage: ±30V
Topology: H-bridge; NTC thermistor
Case: SP4
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1kV; 17A; SP4; Idm: 88A; 390W; screw
Type of module: MOSFET transistor
Mechanical mounting: screw
Pulsed drain current: 88A
Semiconductor structure: transistor/transistor
Drain-source voltage: 1kV
Drain current: 17A
On-state resistance: 0.42Ω
Power dissipation: 390W
Electrical mounting: FASTON connectors; screw
Technology: FREDFET; POWER MOS 7®
Gate-source voltage: ±30V
Topology: H-bridge; NTC thermistor
Case: SP4
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APTM100H45FT3G |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1kV; 14A; SP3; Press-in PCB; 357W
Type of module: MOSFET transistor
Mechanical mounting: screw
Pulsed drain current: 72A
Semiconductor structure: transistor/transistor
Drain-source voltage: 1kV
Drain current: 14A
On-state resistance: 0.54Ω
Power dissipation: 357W
Electrical mounting: Press-in PCB
Technology: FREDFET; POWER MOS 7®
Gate-source voltage: ±30V
Topology: H-bridge; NTC thermistor
Case: SP3
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1kV; 14A; SP3; Press-in PCB; 357W
Type of module: MOSFET transistor
Mechanical mounting: screw
Pulsed drain current: 72A
Semiconductor structure: transistor/transistor
Drain-source voltage: 1kV
Drain current: 14A
On-state resistance: 0.54Ω
Power dissipation: 357W
Electrical mounting: Press-in PCB
Technology: FREDFET; POWER MOS 7®
Gate-source voltage: ±30V
Topology: H-bridge; NTC thermistor
Case: SP3
Produkt ist nicht verfügbar