Produkte > MICROCHIP (MICROSEMI) > Alle Produkte des Herstellers MICROCHIP (MICROSEMI) (4150) > Seite 59 nach 70
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APTMC120AM55CT1AG | MICROCHIP (MICROSEMI) |
![]() Description: Module; SiC diode/transistor; 1.2kV; 42A; SP1; Press-in PCB; 250W Power dissipation: 250W Case: SP1 Semiconductor structure: SiC diode/transistor Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: MOSFET transistor Technology: SiC Topology: MOSFET half-bridge; NTC thermistor Pulsed drain current: 110A Drain-source voltage: 1.2kV Drain current: 42A On-state resistance: 49mΩ |
Produkt ist nicht verfügbar |
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APTMC120AM55CT1AG | MICROCHIP (MICROSEMI) |
![]() Description: Module; SiC diode/transistor; 1.2kV; 42A; SP1; Press-in PCB; 250W Power dissipation: 250W Case: SP1 Semiconductor structure: SiC diode/transistor Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: MOSFET transistor Technology: SiC Topology: MOSFET half-bridge; NTC thermistor Pulsed drain current: 110A Drain-source voltage: 1.2kV Drain current: 42A On-state resistance: 49mΩ Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APTMC120HM17CT3AG | MICROCHIP (MICROSEMI) |
![]() Description: Module; SiC diode/transistor; 1.2kV; 116A; SP3F; Press-in PCB Power dissipation: 750W Case: SP3F Semiconductor structure: SiC diode/transistor Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: MOSFET transistor Technology: SiC Topology: H-bridge; NTC thermistor Pulsed drain current: 300A Drain-source voltage: 1.2kV Drain current: 116A On-state resistance: 17mΩ |
Produkt ist nicht verfügbar |
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APTMC120HM17CT3AG | MICROCHIP (MICROSEMI) |
![]() Description: Module; SiC diode/transistor; 1.2kV; 116A; SP3F; Press-in PCB Power dissipation: 750W Case: SP3F Semiconductor structure: SiC diode/transistor Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: MOSFET transistor Technology: SiC Topology: H-bridge; NTC thermistor Pulsed drain current: 300A Drain-source voltage: 1.2kV Drain current: 116A On-state resistance: 17mΩ Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APTMC120HR11CT3AG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor,common emitter; 1.2kV; 20A; SP3F Power dissipation: 125W Case: SP3F Semiconductor structure: common emitter; SiC diode/transistor Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: MOSFET transistor Technology: Field Stop; SiC; Trench Topology: IGBT x2; MOSFET half-bridge; NTC thermistor Pulsed drain current: 55A Drain-source voltage: 1.2kV Drain current: 20A On-state resistance: 98mΩ |
Produkt ist nicht verfügbar |
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APTMC120HR11CT3AG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor,common emitter; 1.2kV; 20A; SP3F Power dissipation: 125W Case: SP3F Semiconductor structure: common emitter; SiC diode/transistor Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: MOSFET transistor Technology: Field Stop; SiC; Trench Topology: IGBT x2; MOSFET half-bridge; NTC thermistor Pulsed drain current: 55A Drain-source voltage: 1.2kV Drain current: 20A On-state resistance: 98mΩ Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APTMC120HRM40CT3AG | MICROCHIP (MICROSEMI) |
![]() Description: Module; SiC diode/transistor,common emitter; 1.2kV; 55A; SP3F Type of module: MOSFET transistor Semiconductor structure: common emitter; SiC diode/transistor Drain-source voltage: 1.2kV Drain current: 55A Case: SP3F Topology: IGBT x2; MOSFET half-bridge; NTC thermistor Electrical mounting: Press-in PCB On-state resistance: 34mΩ Pulsed drain current: 140A Power dissipation: 375W Technology: Field Stop; SiC; Trench Mechanical mounting: screw |
Produkt ist nicht verfügbar |
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APTMC120HRM40CT3AG | MICROCHIP (MICROSEMI) |
![]() Description: Module; SiC diode/transistor,common emitter; 1.2kV; 55A; SP3F Type of module: MOSFET transistor Semiconductor structure: common emitter; SiC diode/transistor Drain-source voltage: 1.2kV Drain current: 55A Case: SP3F Topology: IGBT x2; MOSFET half-bridge; NTC thermistor Electrical mounting: Press-in PCB On-state resistance: 34mΩ Pulsed drain current: 140A Power dissipation: 375W Technology: Field Stop; SiC; Trench Mechanical mounting: screw Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APTMC120TAM12CTPAG | MICROCHIP (MICROSEMI) |
![]() Description: Module; SiC diode/transistor; 1.2kV; 165A; SP6P; Press-in PCB Power dissipation: 925W Case: SP6P Semiconductor structure: SiC diode/transistor Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: MOSFET transistor Technology: SiC Topology: MOSFET x3 half-bridge; NTC thermistor Pulsed drain current: 440A Drain-source voltage: 1.2kV Drain current: 165A On-state resistance: 12mΩ |
Produkt ist nicht verfügbar |
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APTMC120TAM12CTPAG | MICROCHIP (MICROSEMI) |
![]() Description: Module; SiC diode/transistor; 1.2kV; 165A; SP6P; Press-in PCB Power dissipation: 925W Case: SP6P Semiconductor structure: SiC diode/transistor Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: MOSFET transistor Technology: SiC Topology: MOSFET x3 half-bridge; NTC thermistor Pulsed drain current: 440A Drain-source voltage: 1.2kV Drain current: 165A On-state resistance: 12mΩ Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APTMC120TAM17CTPAG | MICROCHIP (MICROSEMI) |
![]() Description: Module; SiC diode/transistor; 1.2kV; 110A; SP6P; Press-in PCB Power dissipation: 625W Case: SP6P Semiconductor structure: SiC diode/transistor Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: MOSFET transistor Technology: SiC Topology: MOSFET x3 half-bridge; NTC thermistor Pulsed drain current: 300A Drain-source voltage: 1.2kV Drain current: 110A On-state resistance: 17mΩ |
Produkt ist nicht verfügbar |
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APTMC120TAM17CTPAG | MICROCHIP (MICROSEMI) |
![]() Description: Module; SiC diode/transistor; 1.2kV; 110A; SP6P; Press-in PCB Power dissipation: 625W Case: SP6P Semiconductor structure: SiC diode/transistor Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: MOSFET transistor Technology: SiC Topology: MOSFET x3 half-bridge; NTC thermistor Pulsed drain current: 300A Drain-source voltage: 1.2kV Drain current: 110A On-state resistance: 17mΩ Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APTMC120TAM33CTPAG | MICROCHIP (MICROSEMI) |
![]() Description: Module; SiC diode/transistor; 1.2kV; 58A; SP6P; Press-in PCB; 370W Power dissipation: 370W Case: SP6P Semiconductor structure: SiC diode/transistor Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: MOSFET transistor Technology: SiC Topology: MOSFET x3 half-bridge; NTC thermistor Pulsed drain current: 155A Drain-source voltage: 1.2kV Drain current: 58A On-state resistance: 33mΩ |
Produkt ist nicht verfügbar |
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APTMC120TAM33CTPAG | MICROCHIP (MICROSEMI) |
![]() Description: Module; SiC diode/transistor; 1.2kV; 58A; SP6P; Press-in PCB; 370W Power dissipation: 370W Case: SP6P Semiconductor structure: SiC diode/transistor Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: MOSFET transistor Technology: SiC Topology: MOSFET x3 half-bridge; NTC thermistor Pulsed drain current: 155A Drain-source voltage: 1.2kV Drain current: 58A On-state resistance: 33mΩ Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APTMC120TAM34CT3AG | MICROCHIP (MICROSEMI) |
![]() Description: Module; SiC diode/transistor; 1.2kV; 58A; SP3F; Press-in PCB; 375W Power dissipation: 375W Case: SP3F Semiconductor structure: SiC diode/transistor Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: MOSFET transistor Technology: SiC Topology: MOSFET three-phase bridge; NTC thermistor Pulsed drain current: 150A Drain-source voltage: 1.2kV Drain current: 58A On-state resistance: 34mΩ |
Produkt ist nicht verfügbar |
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APTMC120TAM34CT3AG | MICROCHIP (MICROSEMI) |
![]() Description: Module; SiC diode/transistor; 1.2kV; 58A; SP3F; Press-in PCB; 375W Power dissipation: 375W Case: SP3F Semiconductor structure: SiC diode/transistor Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: MOSFET transistor Technology: SiC Topology: MOSFET three-phase bridge; NTC thermistor Pulsed drain current: 150A Drain-source voltage: 1.2kV Drain current: 58A On-state resistance: 34mΩ Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APTMC170AM30CT1AG | MICROCHIP (MICROSEMI) |
![]() Description: Module; SiC diode/transistor; 1.7kV; 74A; SP1; Press-in PCB; 700W Pulsed drain current: 200A Power dissipation: 700W Technology: SiC Drain current: 74A Drain-source voltage: 1.7kV Mechanical mounting: screw Electrical mounting: Press-in PCB Type of module: MOSFET transistor Semiconductor structure: SiC diode/transistor Case: SP1 On-state resistance: 35mΩ Topology: MOSFET half-bridge + serial diodes; NTC thermistor |
Produkt ist nicht verfügbar |
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APTMC170AM30CT1AG | MICROCHIP (MICROSEMI) |
![]() Description: Module; SiC diode/transistor; 1.7kV; 74A; SP1; Press-in PCB; 700W Pulsed drain current: 200A Power dissipation: 700W Technology: SiC Drain current: 74A Drain-source voltage: 1.7kV Mechanical mounting: screw Electrical mounting: Press-in PCB Type of module: MOSFET transistor Semiconductor structure: SiC diode/transistor Case: SP1 On-state resistance: 35mΩ Topology: MOSFET half-bridge + serial diodes; NTC thermistor Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APTMC170AM60CT1AG | MICROCHIP (MICROSEMI) |
![]() Description: Module; SiC diode/transistor; 1.7kV; 37A; SP1; Press-in PCB; 350W Pulsed drain current: 100A Power dissipation: 350W Technology: SiC Drain current: 37A Drain-source voltage: 1.7kV Mechanical mounting: screw Electrical mounting: Press-in PCB Type of module: MOSFET transistor Semiconductor structure: SiC diode/transistor Case: SP1 On-state resistance: 70mΩ Topology: MOSFET half-bridge + serial diodes; NTC thermistor |
Produkt ist nicht verfügbar |
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APTMC170AM60CT1AG | MICROCHIP (MICROSEMI) |
![]() Description: Module; SiC diode/transistor; 1.7kV; 37A; SP1; Press-in PCB; 350W Pulsed drain current: 100A Power dissipation: 350W Technology: SiC Drain current: 37A Drain-source voltage: 1.7kV Mechanical mounting: screw Electrical mounting: Press-in PCB Type of module: MOSFET transistor Semiconductor structure: SiC diode/transistor Case: SP1 On-state resistance: 70mΩ Topology: MOSFET half-bridge + serial diodes; NTC thermistor Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APTMC60TL11CT3AG | MICROCHIP (MICROSEMI) |
![]() Description: Module; SiC diode/transistor; 1.2kV; 22A; SP3F; Press-in PCB; 125W Power dissipation: 125W Semiconductor structure: SiC diode/transistor Case: SP3F Technology: SiC Drain-source voltage: 1.2kV Mechanical mounting: screw Electrical mounting: Press-in PCB Type of module: MOSFET transistor On-state resistance: 98mΩ Topology: NTC thermistor; three-level inverter; single-phase Pulsed drain current: 55A Drain current: 22A |
Produkt ist nicht verfügbar |
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APTMC60TL11CT3AG | MICROCHIP (MICROSEMI) |
![]() Description: Module; SiC diode/transistor; 1.2kV; 22A; SP3F; Press-in PCB; 125W Power dissipation: 125W Semiconductor structure: SiC diode/transistor Case: SP3F Technology: SiC Drain-source voltage: 1.2kV Mechanical mounting: screw Electrical mounting: Press-in PCB Type of module: MOSFET transistor On-state resistance: 98mΩ Topology: NTC thermistor; three-level inverter; single-phase Pulsed drain current: 55A Drain current: 22A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APTMC60TLM14CAG | MICROCHIP (MICROSEMI) |
![]() Description: Module; SiC diode/transistor; 1.2kV; 164A; SP6C; Idm: 440A; 925W Power dissipation: 925W Semiconductor structure: SiC diode/transistor Case: SP6C Technology: SiC Drain-source voltage: 1.2kV Mechanical mounting: screw Electrical mounting: FASTON connectors; screw Type of module: MOSFET transistor On-state resistance: 12mΩ Topology: three-level inverter; single-phase Pulsed drain current: 440A Drain current: 164A |
Produkt ist nicht verfügbar |
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APTMC60TLM14CAG | MICROCHIP (MICROSEMI) |
![]() Description: Module; SiC diode/transistor; 1.2kV; 164A; SP6C; Idm: 440A; 925W Power dissipation: 925W Semiconductor structure: SiC diode/transistor Case: SP6C Technology: SiC Drain-source voltage: 1.2kV Mechanical mounting: screw Electrical mounting: FASTON connectors; screw Type of module: MOSFET transistor On-state resistance: 12mΩ Topology: three-level inverter; single-phase Pulsed drain current: 440A Drain current: 164A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APTMC60TLM55CT3AG | MICROCHIP (MICROSEMI) |
![]() Description: Module; SiC diode/transistor; 1.2kV; 38A; SP3F; Press-in PCB; 263W Power dissipation: 263W Semiconductor structure: SiC diode/transistor Case: SP3F Technology: SiC Drain-source voltage: 1.2kV Mechanical mounting: screw Electrical mounting: Press-in PCB Type of module: MOSFET transistor On-state resistance: 52mΩ Topology: NTC thermistor; three-level inverter; single-phase Pulsed drain current: 100A Drain current: 38A |
Produkt ist nicht verfügbar |
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APTMC60TLM55CT3AG | MICROCHIP (MICROSEMI) |
![]() Description: Module; SiC diode/transistor; 1.2kV; 38A; SP3F; Press-in PCB; 263W Power dissipation: 263W Semiconductor structure: SiC diode/transistor Case: SP3F Technology: SiC Drain-source voltage: 1.2kV Mechanical mounting: screw Electrical mounting: Press-in PCB Type of module: MOSFET transistor On-state resistance: 52mΩ Topology: NTC thermistor; three-level inverter; single-phase Pulsed drain current: 100A Drain current: 38A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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ARF475FL | MICROCHIP (MICROSEMI) |
![]() Description: Transistor: N-MOSFET x2; unipolar; RF; 500V; 10A; 910W; T3A-8; 16dB Type of transistor: N-MOSFET x2 Polarisation: unipolar Kind of transistor: RF Drain-source voltage: 500V Drain current: 10A Power dissipation: 910W Case: T3A-8 Gate-source voltage: ±30V Kind of package: tube Frequency: 128MHz Kind of channel: depleted Semiconductor structure: common source Features of semiconductor devices: dual gate Output power: 900W Electrical mounting: FASTON connectors; soldering; THT Open-loop gain: 16dB Efficiency: 55% Mechanical mounting: screw |
Produkt ist nicht verfügbar |
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ARF475FL | MICROCHIP (MICROSEMI) |
![]() Description: Transistor: N-MOSFET x2; unipolar; RF; 500V; 10A; 910W; T3A-8; 16dB Type of transistor: N-MOSFET x2 Polarisation: unipolar Kind of transistor: RF Drain-source voltage: 500V Drain current: 10A Power dissipation: 910W Case: T3A-8 Gate-source voltage: ±30V Kind of package: tube Frequency: 128MHz Kind of channel: depleted Semiconductor structure: common source Features of semiconductor devices: dual gate Output power: 900W Electrical mounting: FASTON connectors; soldering; THT Open-loop gain: 16dB Efficiency: 55% Mechanical mounting: screw Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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CDLL4106 | MICROCHIP (MICROSEMI) |
![]() Description: Diode: Zener; 0.5W; 12V; 32mA; SMD; DO213AA; single diode; Ir: 50nA Mounting: SMD Case: DO213AA Tolerance: ±5% Semiconductor structure: single diode Zener voltage: 12V Zener current: 32mA Leakage current: 50nA Power dissipation: 0.5W Type of diode: Zener |
Produkt ist nicht verfügbar |
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CDLL4106 | MICROCHIP (MICROSEMI) |
![]() Description: Diode: Zener; 0.5W; 12V; 32mA; SMD; DO213AA; single diode; Ir: 50nA Mounting: SMD Case: DO213AA Tolerance: ±5% Semiconductor structure: single diode Zener voltage: 12V Zener current: 32mA Leakage current: 50nA Power dissipation: 0.5W Type of diode: Zener Anzahl je Verpackung: 272 Stücke |
Produkt ist nicht verfügbar |
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CDLL4624 | MICROCHIP (MICROSEMI) |
![]() Description: Diode: Zener; 0.5W; 4.7V; 75mA; SMD; tape; DO213AA; single diode Tolerance: ±5% Semiconductor structure: single diode Zener voltage: 4.7V Zener current: 75mA Leakage current: 5µA Power dissipation: 0.5W Kind of package: tape Type of diode: Zener Mounting: SMD Case: DO213AA |
Produkt ist nicht verfügbar |
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CDLL4624 | MICROCHIP (MICROSEMI) |
![]() Description: Diode: Zener; 0.5W; 4.7V; 75mA; SMD; tape; DO213AA; single diode Tolerance: ±5% Semiconductor structure: single diode Zener voltage: 4.7V Zener current: 75mA Leakage current: 5µA Power dissipation: 0.5W Kind of package: tape Type of diode: Zener Mounting: SMD Case: DO213AA Anzahl je Verpackung: 234 Stücke |
Produkt ist nicht verfügbar |
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CDLL4626 | MICROCHIP (MICROSEMI) |
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auf Bestellung 24 Stücke: Lieferzeit 7-14 Tag (e) |
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CDLL4627 | MICROCHIP (MICROSEMI) |
![]() Description: Diode: Zener; 0.5W; 6.2V; 61mA; SMD; DO213AA; single diode; Ir: 5uA Mounting: SMD Power dissipation: 0.5W Type of diode: Zener Case: DO213AA Tolerance: ±5% Semiconductor structure: single diode Zener voltage: 6.2V Zener current: 61mA Leakage current: 5µA |
auf Bestellung 23 Stücke: Lieferzeit 14-21 Tag (e) |
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CDLL4627 | MICROCHIP (MICROSEMI) |
![]() Description: Diode: Zener; 0.5W; 6.2V; 61mA; SMD; DO213AA; single diode; Ir: 5uA Mounting: SMD Power dissipation: 0.5W Type of diode: Zener Case: DO213AA Tolerance: ±5% Semiconductor structure: single diode Zener voltage: 6.2V Zener current: 61mA Leakage current: 5µA Anzahl je Verpackung: 1 Stücke |
auf Bestellung 23 Stücke: Lieferzeit 7-14 Tag (e) |
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CDLL5522B | MICROCHIP (MICROSEMI) |
![]() Description: Diode: Zener; 0.5W; 4.7V; 81mA; SMD; tape; DO213AA; single diode Kind of package: tape Power dissipation: 0.5W Type of diode: Zener Mounting: SMD Case: DO213AA Tolerance: ±5% Semiconductor structure: single diode Zener voltage: 4.7V Zener current: 81mA Leakage current: 2µA |
Produkt ist nicht verfügbar |
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CDLL5522B | MICROCHIP (MICROSEMI) |
![]() Description: Diode: Zener; 0.5W; 4.7V; 81mA; SMD; tape; DO213AA; single diode Kind of package: tape Power dissipation: 0.5W Type of diode: Zener Mounting: SMD Case: DO213AA Tolerance: ±5% Semiconductor structure: single diode Zener voltage: 4.7V Zener current: 81mA Leakage current: 2µA Anzahl je Verpackung: 137 Stücke |
Produkt ist nicht verfügbar |
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CDLL5711 | MICROCHIP (MICROSEMI) |
![]() Description: Diode: Schottky switching; SMD; 50V; 15mA; DO213AA; reel,tape Mounting: SMD Kind of package: reel; tape Type of diode: Schottky switching Case: DO213AA Max. off-state voltage: 50V Max. forward voltage: 1V Load current: 15mA Semiconductor structure: single diode Leakage current: 0.2µA |
auf Bestellung 7 Stücke: Lieferzeit 14-21 Tag (e) |
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CDLL5711 | MICROCHIP (MICROSEMI) |
![]() Description: Diode: Schottky switching; SMD; 50V; 15mA; DO213AA; reel,tape Mounting: SMD Kind of package: reel; tape Type of diode: Schottky switching Case: DO213AA Max. off-state voltage: 50V Max. forward voltage: 1V Load current: 15mA Semiconductor structure: single diode Leakage current: 0.2µA Anzahl je Verpackung: 1 Stücke |
auf Bestellung 7 Stücke: Lieferzeit 7-14 Tag (e) |
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CDLL5819 | MICROCHIP (MICROSEMI) |
![]() Description: Diode: Schottky rectifying; SMD; 45V; 1A; DO213AB Mounting: SMD Max. forward voltage: 0.49V Load current: 1A Semiconductor structure: single diode Max. forward impulse current: 25A Leakage current: 5mA Type of diode: Schottky rectifying Case: DO213AB Max. off-state voltage: 45V |
Produkt ist nicht verfügbar |
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CDLL5819 | MICROCHIP (MICROSEMI) |
![]() Description: Diode: Schottky rectifying; SMD; 45V; 1A; DO213AB Mounting: SMD Max. forward voltage: 0.49V Load current: 1A Semiconductor structure: single diode Max. forward impulse current: 25A Leakage current: 5mA Type of diode: Schottky rectifying Case: DO213AB Max. off-state voltage: 45V Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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CDLL827 | MICROCHIP (MICROSEMI) |
![]() Description: Diode: Zener; 0.5W; 6.2V; 7.5mA; SMD; DO213AA; single diode; Ir: 2uA Type of diode: Zener Power dissipation: 0.5W Zener voltage: 6.2V Zener current: 7.5mA Case: DO213AA Mounting: SMD Tolerance: ±5% Semiconductor structure: single diode Leakage current: 2µA |
Produkt ist nicht verfügbar |
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CDLL827 | MICROCHIP (MICROSEMI) |
![]() Description: Diode: Zener; 0.5W; 6.2V; 7.5mA; SMD; DO213AA; single diode; Ir: 2uA Type of diode: Zener Power dissipation: 0.5W Zener voltage: 6.2V Zener current: 7.5mA Case: DO213AA Mounting: SMD Tolerance: ±5% Semiconductor structure: single diode Leakage current: 2µA Anzahl je Verpackung: 100 Stücke |
Produkt ist nicht verfügbar |
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EX256-FTQG100 | MICROCHIP (MICROSEMI) |
![]() Description: IC: FPGA; SMD; TQFP100; Number of macrocells: 256; I/O: 81; 250MHz Supply voltage: 2.3...2.7V DC Number of inputs/outputs: 81 Frequency: 250MHz Mounting: SMD Number of gates: 12k Case: TQFP100 Type of integrated circuit: FPGA Number of macrocells: 256 |
Produkt ist nicht verfügbar |
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EX256-TQG100 | MICROCHIP (MICROSEMI) |
![]() Description: IC: FPGA; SMD; TQFP100; Number of macrocells: 256; I/O: 81; 250MHz Supply voltage: 2.3...2.7V DC Number of inputs/outputs: 81 Frequency: 250MHz Mounting: SMD Number of gates: 12k Case: TQFP100 Type of integrated circuit: FPGA Number of macrocells: 256 |
Produkt ist nicht verfügbar |
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EX256-TQG100I | MICROCHIP (MICROSEMI) |
![]() Description: IC: FPGA; SMD; TQFP100; Number of macrocells: 256; I/O: 81; 250MHz Supply voltage: 2.3...2.7V DC Number of inputs/outputs: 81 Frequency: 250MHz Mounting: SMD Number of gates: 12k Case: TQFP100 Type of integrated circuit: FPGA Number of macrocells: 256 |
Produkt ist nicht verfügbar |
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EX256-FTQG100 | MICROCHIP (MICROSEMI) |
![]() Description: IC: FPGA; SMD; TQFP100; Number of macrocells: 256; I/O: 81; 250MHz Supply voltage: 2.3...2.7V DC Number of inputs/outputs: 81 Frequency: 250MHz Mounting: SMD Number of gates: 12k Case: TQFP100 Type of integrated circuit: FPGA Number of macrocells: 256 Anzahl je Verpackung: 90 Stücke |
Produkt ist nicht verfügbar |
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EX256-TQG100 | MICROCHIP (MICROSEMI) |
![]() Description: IC: FPGA; SMD; TQFP100; Number of macrocells: 256; I/O: 81; 250MHz Supply voltage: 2.3...2.7V DC Number of inputs/outputs: 81 Frequency: 250MHz Mounting: SMD Number of gates: 12k Case: TQFP100 Type of integrated circuit: FPGA Number of macrocells: 256 Anzahl je Verpackung: 90 Stücke |
Produkt ist nicht verfügbar |
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EX256-TQG100I | MICROCHIP (MICROSEMI) |
![]() Description: IC: FPGA; SMD; TQFP100; Number of macrocells: 256; I/O: 81; 250MHz Supply voltage: 2.3...2.7V DC Number of inputs/outputs: 81 Frequency: 250MHz Mounting: SMD Number of gates: 12k Case: TQFP100 Type of integrated circuit: FPGA Number of macrocells: 256 Anzahl je Verpackung: 90 Stücke |
Produkt ist nicht verfügbar |
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HPFM-00117 | MICROCHIP (MICROSEMI) |
![]() Description: Module: gate driver board; PCB; 3.3kV; 14.5÷16VDC; 15kHz; 30A Type of module: gate driver board Application: for medium and high power application Mounting: PCB Operating temperature: -40...85°C Voltage class: 3.3kV Supply voltage: 14.5...16V DC Frequency: 15kHz Output current: 30A Kind of output: IGBT driver Integrated circuit features: integrated DC/DC converter Related items: ASBK-014 Trade name: AgileSwitch® |
Produkt ist nicht verfügbar |
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HPFM-00117 | MICROCHIP (MICROSEMI) |
![]() Description: Module: gate driver board; PCB; 3.3kV; 14.5÷16VDC; 15kHz; 30A Type of module: gate driver board Application: for medium and high power application Mounting: PCB Operating temperature: -40...85°C Voltage class: 3.3kV Supply voltage: 14.5...16V DC Frequency: 15kHz Output current: 30A Kind of output: IGBT driver Integrated circuit features: integrated DC/DC converter Related items: ASBK-014 Trade name: AgileSwitch® Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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LX5535LQ | MICROCHIP (MICROSEMI) |
![]() Description: IC: RF amplifier; 2.4÷2.5GHz; Ch: 1; MLPQ16 Type of integrated circuit: RF amplifier Bandwidth: 2.4...2.5GHz Mounting: SMT Number of channels: 1 Case: MLPQ16 |
Produkt ist nicht verfügbar |
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LX5535LQ | MICROCHIP (MICROSEMI) |
![]() Description: IC: RF amplifier; 2.4÷2.5GHz; Ch: 1; MLPQ16 Type of integrated circuit: RF amplifier Bandwidth: 2.4...2.5GHz Mounting: SMT Number of channels: 1 Case: MLPQ16 Anzahl je Verpackung: 4500 Stücke |
Produkt ist nicht verfügbar |
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LX7165-01CSP | MICROCHIP (MICROSEMI) |
![]() ![]() Description: IC: PMIC; DC/DC converter; Uin: 3÷5.5VDC; Uout: 0.9VDC; 5A; WLCSP20 Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC converter Input voltage: 3...5.5V DC Output voltage: 0.9V DC Output current: 5A Case: WLCSP20 Mounting: SMD Frequency: 1875kHz Topology: buck Number of channels: 1 Operating temperature: 0...85°C Kind of package: bulk Interface: I2C; serial |
Produkt ist nicht verfügbar |
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LX7165-01CSP | MICROCHIP (MICROSEMI) |
![]() ![]() Description: IC: PMIC; DC/DC converter; Uin: 3÷5.5VDC; Uout: 0.9VDC; 5A; WLCSP20 Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC converter Input voltage: 3...5.5V DC Output voltage: 0.9V DC Output current: 5A Case: WLCSP20 Mounting: SMD Frequency: 1875kHz Topology: buck Number of channels: 1 Operating temperature: 0...85°C Kind of package: bulk Interface: I2C; serial Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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M2GL010-FGG484 | MICROCHIP (MICROSEMI) |
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Produkt ist nicht verfügbar |
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M2S005-TQG144 | MICROCHIP (MICROSEMI) |
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Produkt ist nicht verfügbar |
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M2S010-TQG144 | MICROCHIP (MICROSEMI) |
![]() Description: IC: FPGA; SMD; TQFP144; I/O: 84; 1.2VDC; 166MHz; RAM: 400kB Mounting: SMD Case: TQFP144 Memory capacity: 256kB RAM memory capacity: 400kB Frequency: 166MHz Supply voltage: 1.2V DC Type of integrated circuit: FPGA Number of inputs/outputs: 84 |
Produkt ist nicht verfügbar |
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M2S010-TQG144I | MICROCHIP (MICROSEMI) |
![]() Description: IC: FPGA; SMD; TQFP144; I/O: 84; 1.2VDC; 166MHz; RAM: 400kB Mounting: SMD Case: TQFP144 Memory capacity: 256kB RAM memory capacity: 400kB Frequency: 166MHz Supply voltage: 1.2V DC Type of integrated circuit: FPGA Number of inputs/outputs: 84 |
Produkt ist nicht verfügbar |
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M2S010-TQG144 | MICROCHIP (MICROSEMI) |
![]() Description: IC: FPGA; SMD; TQFP144; I/O: 84; 1.2VDC; 166MHz; RAM: 400kB Mounting: SMD Case: TQFP144 Memory capacity: 256kB RAM memory capacity: 400kB Frequency: 166MHz Supply voltage: 1.2V DC Type of integrated circuit: FPGA Number of inputs/outputs: 84 |
Produkt ist nicht verfügbar |
APTMC120AM55CT1AG |
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Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 42A; SP1; Press-in PCB; 250W
Power dissipation: 250W
Case: SP1
Semiconductor structure: SiC diode/transistor
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Topology: MOSFET half-bridge; NTC thermistor
Pulsed drain current: 110A
Drain-source voltage: 1.2kV
Drain current: 42A
On-state resistance: 49mΩ
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 42A; SP1; Press-in PCB; 250W
Power dissipation: 250W
Case: SP1
Semiconductor structure: SiC diode/transistor
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Topology: MOSFET half-bridge; NTC thermistor
Pulsed drain current: 110A
Drain-source voltage: 1.2kV
Drain current: 42A
On-state resistance: 49mΩ
Produkt ist nicht verfügbar
APTMC120AM55CT1AG |
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Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 42A; SP1; Press-in PCB; 250W
Power dissipation: 250W
Case: SP1
Semiconductor structure: SiC diode/transistor
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Topology: MOSFET half-bridge; NTC thermistor
Pulsed drain current: 110A
Drain-source voltage: 1.2kV
Drain current: 42A
On-state resistance: 49mΩ
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 42A; SP1; Press-in PCB; 250W
Power dissipation: 250W
Case: SP1
Semiconductor structure: SiC diode/transistor
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Topology: MOSFET half-bridge; NTC thermistor
Pulsed drain current: 110A
Drain-source voltage: 1.2kV
Drain current: 42A
On-state resistance: 49mΩ
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
APTMC120HM17CT3AG |
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Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 116A; SP3F; Press-in PCB
Power dissipation: 750W
Case: SP3F
Semiconductor structure: SiC diode/transistor
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Topology: H-bridge; NTC thermistor
Pulsed drain current: 300A
Drain-source voltage: 1.2kV
Drain current: 116A
On-state resistance: 17mΩ
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 116A; SP3F; Press-in PCB
Power dissipation: 750W
Case: SP3F
Semiconductor structure: SiC diode/transistor
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Topology: H-bridge; NTC thermistor
Pulsed drain current: 300A
Drain-source voltage: 1.2kV
Drain current: 116A
On-state resistance: 17mΩ
Produkt ist nicht verfügbar
APTMC120HM17CT3AG |
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Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 116A; SP3F; Press-in PCB
Power dissipation: 750W
Case: SP3F
Semiconductor structure: SiC diode/transistor
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Topology: H-bridge; NTC thermistor
Pulsed drain current: 300A
Drain-source voltage: 1.2kV
Drain current: 116A
On-state resistance: 17mΩ
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 116A; SP3F; Press-in PCB
Power dissipation: 750W
Case: SP3F
Semiconductor structure: SiC diode/transistor
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Topology: H-bridge; NTC thermistor
Pulsed drain current: 300A
Drain-source voltage: 1.2kV
Drain current: 116A
On-state resistance: 17mΩ
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
APTMC120HR11CT3AG |
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor,common emitter; 1.2kV; 20A; SP3F
Power dissipation: 125W
Case: SP3F
Semiconductor structure: common emitter; SiC diode/transistor
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: Field Stop; SiC; Trench
Topology: IGBT x2; MOSFET half-bridge; NTC thermistor
Pulsed drain current: 55A
Drain-source voltage: 1.2kV
Drain current: 20A
On-state resistance: 98mΩ
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor,common emitter; 1.2kV; 20A; SP3F
Power dissipation: 125W
Case: SP3F
Semiconductor structure: common emitter; SiC diode/transistor
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: Field Stop; SiC; Trench
Topology: IGBT x2; MOSFET half-bridge; NTC thermistor
Pulsed drain current: 55A
Drain-source voltage: 1.2kV
Drain current: 20A
On-state resistance: 98mΩ
Produkt ist nicht verfügbar
APTMC120HR11CT3AG |
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor,common emitter; 1.2kV; 20A; SP3F
Power dissipation: 125W
Case: SP3F
Semiconductor structure: common emitter; SiC diode/transistor
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: Field Stop; SiC; Trench
Topology: IGBT x2; MOSFET half-bridge; NTC thermistor
Pulsed drain current: 55A
Drain-source voltage: 1.2kV
Drain current: 20A
On-state resistance: 98mΩ
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor,common emitter; 1.2kV; 20A; SP3F
Power dissipation: 125W
Case: SP3F
Semiconductor structure: common emitter; SiC diode/transistor
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: Field Stop; SiC; Trench
Topology: IGBT x2; MOSFET half-bridge; NTC thermistor
Pulsed drain current: 55A
Drain-source voltage: 1.2kV
Drain current: 20A
On-state resistance: 98mΩ
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
APTMC120HRM40CT3AG |
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Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor,common emitter; 1.2kV; 55A; SP3F
Type of module: MOSFET transistor
Semiconductor structure: common emitter; SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 55A
Case: SP3F
Topology: IGBT x2; MOSFET half-bridge; NTC thermistor
Electrical mounting: Press-in PCB
On-state resistance: 34mΩ
Pulsed drain current: 140A
Power dissipation: 375W
Technology: Field Stop; SiC; Trench
Mechanical mounting: screw
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor,common emitter; 1.2kV; 55A; SP3F
Type of module: MOSFET transistor
Semiconductor structure: common emitter; SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 55A
Case: SP3F
Topology: IGBT x2; MOSFET half-bridge; NTC thermistor
Electrical mounting: Press-in PCB
On-state resistance: 34mΩ
Pulsed drain current: 140A
Power dissipation: 375W
Technology: Field Stop; SiC; Trench
Mechanical mounting: screw
Produkt ist nicht verfügbar
APTMC120HRM40CT3AG |
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Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor,common emitter; 1.2kV; 55A; SP3F
Type of module: MOSFET transistor
Semiconductor structure: common emitter; SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 55A
Case: SP3F
Topology: IGBT x2; MOSFET half-bridge; NTC thermistor
Electrical mounting: Press-in PCB
On-state resistance: 34mΩ
Pulsed drain current: 140A
Power dissipation: 375W
Technology: Field Stop; SiC; Trench
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor,common emitter; 1.2kV; 55A; SP3F
Type of module: MOSFET transistor
Semiconductor structure: common emitter; SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 55A
Case: SP3F
Topology: IGBT x2; MOSFET half-bridge; NTC thermistor
Electrical mounting: Press-in PCB
On-state resistance: 34mΩ
Pulsed drain current: 140A
Power dissipation: 375W
Technology: Field Stop; SiC; Trench
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
APTMC120TAM12CTPAG |
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Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 165A; SP6P; Press-in PCB
Power dissipation: 925W
Case: SP6P
Semiconductor structure: SiC diode/transistor
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Topology: MOSFET x3 half-bridge; NTC thermistor
Pulsed drain current: 440A
Drain-source voltage: 1.2kV
Drain current: 165A
On-state resistance: 12mΩ
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 165A; SP6P; Press-in PCB
Power dissipation: 925W
Case: SP6P
Semiconductor structure: SiC diode/transistor
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Topology: MOSFET x3 half-bridge; NTC thermistor
Pulsed drain current: 440A
Drain-source voltage: 1.2kV
Drain current: 165A
On-state resistance: 12mΩ
Produkt ist nicht verfügbar
APTMC120TAM12CTPAG |
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Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 165A; SP6P; Press-in PCB
Power dissipation: 925W
Case: SP6P
Semiconductor structure: SiC diode/transistor
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Topology: MOSFET x3 half-bridge; NTC thermistor
Pulsed drain current: 440A
Drain-source voltage: 1.2kV
Drain current: 165A
On-state resistance: 12mΩ
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 165A; SP6P; Press-in PCB
Power dissipation: 925W
Case: SP6P
Semiconductor structure: SiC diode/transistor
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Topology: MOSFET x3 half-bridge; NTC thermistor
Pulsed drain current: 440A
Drain-source voltage: 1.2kV
Drain current: 165A
On-state resistance: 12mΩ
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
APTMC120TAM17CTPAG |
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Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 110A; SP6P; Press-in PCB
Power dissipation: 625W
Case: SP6P
Semiconductor structure: SiC diode/transistor
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Topology: MOSFET x3 half-bridge; NTC thermistor
Pulsed drain current: 300A
Drain-source voltage: 1.2kV
Drain current: 110A
On-state resistance: 17mΩ
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 110A; SP6P; Press-in PCB
Power dissipation: 625W
Case: SP6P
Semiconductor structure: SiC diode/transistor
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Topology: MOSFET x3 half-bridge; NTC thermistor
Pulsed drain current: 300A
Drain-source voltage: 1.2kV
Drain current: 110A
On-state resistance: 17mΩ
Produkt ist nicht verfügbar
APTMC120TAM17CTPAG |
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Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 110A; SP6P; Press-in PCB
Power dissipation: 625W
Case: SP6P
Semiconductor structure: SiC diode/transistor
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Topology: MOSFET x3 half-bridge; NTC thermistor
Pulsed drain current: 300A
Drain-source voltage: 1.2kV
Drain current: 110A
On-state resistance: 17mΩ
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 110A; SP6P; Press-in PCB
Power dissipation: 625W
Case: SP6P
Semiconductor structure: SiC diode/transistor
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Topology: MOSFET x3 half-bridge; NTC thermistor
Pulsed drain current: 300A
Drain-source voltage: 1.2kV
Drain current: 110A
On-state resistance: 17mΩ
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
APTMC120TAM33CTPAG |
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Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 58A; SP6P; Press-in PCB; 370W
Power dissipation: 370W
Case: SP6P
Semiconductor structure: SiC diode/transistor
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Topology: MOSFET x3 half-bridge; NTC thermistor
Pulsed drain current: 155A
Drain-source voltage: 1.2kV
Drain current: 58A
On-state resistance: 33mΩ
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 58A; SP6P; Press-in PCB; 370W
Power dissipation: 370W
Case: SP6P
Semiconductor structure: SiC diode/transistor
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Topology: MOSFET x3 half-bridge; NTC thermistor
Pulsed drain current: 155A
Drain-source voltage: 1.2kV
Drain current: 58A
On-state resistance: 33mΩ
Produkt ist nicht verfügbar
APTMC120TAM33CTPAG |
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Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 58A; SP6P; Press-in PCB; 370W
Power dissipation: 370W
Case: SP6P
Semiconductor structure: SiC diode/transistor
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Topology: MOSFET x3 half-bridge; NTC thermistor
Pulsed drain current: 155A
Drain-source voltage: 1.2kV
Drain current: 58A
On-state resistance: 33mΩ
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 58A; SP6P; Press-in PCB; 370W
Power dissipation: 370W
Case: SP6P
Semiconductor structure: SiC diode/transistor
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Topology: MOSFET x3 half-bridge; NTC thermistor
Pulsed drain current: 155A
Drain-source voltage: 1.2kV
Drain current: 58A
On-state resistance: 33mΩ
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
APTMC120TAM34CT3AG |
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Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 58A; SP3F; Press-in PCB; 375W
Power dissipation: 375W
Case: SP3F
Semiconductor structure: SiC diode/transistor
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Topology: MOSFET three-phase bridge; NTC thermistor
Pulsed drain current: 150A
Drain-source voltage: 1.2kV
Drain current: 58A
On-state resistance: 34mΩ
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 58A; SP3F; Press-in PCB; 375W
Power dissipation: 375W
Case: SP3F
Semiconductor structure: SiC diode/transistor
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Topology: MOSFET three-phase bridge; NTC thermistor
Pulsed drain current: 150A
Drain-source voltage: 1.2kV
Drain current: 58A
On-state resistance: 34mΩ
Produkt ist nicht verfügbar
APTMC120TAM34CT3AG |
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Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 58A; SP3F; Press-in PCB; 375W
Power dissipation: 375W
Case: SP3F
Semiconductor structure: SiC diode/transistor
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Topology: MOSFET three-phase bridge; NTC thermistor
Pulsed drain current: 150A
Drain-source voltage: 1.2kV
Drain current: 58A
On-state resistance: 34mΩ
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 58A; SP3F; Press-in PCB; 375W
Power dissipation: 375W
Case: SP3F
Semiconductor structure: SiC diode/transistor
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Topology: MOSFET three-phase bridge; NTC thermistor
Pulsed drain current: 150A
Drain-source voltage: 1.2kV
Drain current: 58A
On-state resistance: 34mΩ
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
APTMC170AM30CT1AG |
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Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.7kV; 74A; SP1; Press-in PCB; 700W
Pulsed drain current: 200A
Power dissipation: 700W
Technology: SiC
Drain current: 74A
Drain-source voltage: 1.7kV
Mechanical mounting: screw
Electrical mounting: Press-in PCB
Type of module: MOSFET transistor
Semiconductor structure: SiC diode/transistor
Case: SP1
On-state resistance: 35mΩ
Topology: MOSFET half-bridge + serial diodes; NTC thermistor
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.7kV; 74A; SP1; Press-in PCB; 700W
Pulsed drain current: 200A
Power dissipation: 700W
Technology: SiC
Drain current: 74A
Drain-source voltage: 1.7kV
Mechanical mounting: screw
Electrical mounting: Press-in PCB
Type of module: MOSFET transistor
Semiconductor structure: SiC diode/transistor
Case: SP1
On-state resistance: 35mΩ
Topology: MOSFET half-bridge + serial diodes; NTC thermistor
Produkt ist nicht verfügbar
APTMC170AM30CT1AG |
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Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.7kV; 74A; SP1; Press-in PCB; 700W
Pulsed drain current: 200A
Power dissipation: 700W
Technology: SiC
Drain current: 74A
Drain-source voltage: 1.7kV
Mechanical mounting: screw
Electrical mounting: Press-in PCB
Type of module: MOSFET transistor
Semiconductor structure: SiC diode/transistor
Case: SP1
On-state resistance: 35mΩ
Topology: MOSFET half-bridge + serial diodes; NTC thermistor
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.7kV; 74A; SP1; Press-in PCB; 700W
Pulsed drain current: 200A
Power dissipation: 700W
Technology: SiC
Drain current: 74A
Drain-source voltage: 1.7kV
Mechanical mounting: screw
Electrical mounting: Press-in PCB
Type of module: MOSFET transistor
Semiconductor structure: SiC diode/transistor
Case: SP1
On-state resistance: 35mΩ
Topology: MOSFET half-bridge + serial diodes; NTC thermistor
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
APTMC170AM60CT1AG |
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Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.7kV; 37A; SP1; Press-in PCB; 350W
Pulsed drain current: 100A
Power dissipation: 350W
Technology: SiC
Drain current: 37A
Drain-source voltage: 1.7kV
Mechanical mounting: screw
Electrical mounting: Press-in PCB
Type of module: MOSFET transistor
Semiconductor structure: SiC diode/transistor
Case: SP1
On-state resistance: 70mΩ
Topology: MOSFET half-bridge + serial diodes; NTC thermistor
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.7kV; 37A; SP1; Press-in PCB; 350W
Pulsed drain current: 100A
Power dissipation: 350W
Technology: SiC
Drain current: 37A
Drain-source voltage: 1.7kV
Mechanical mounting: screw
Electrical mounting: Press-in PCB
Type of module: MOSFET transistor
Semiconductor structure: SiC diode/transistor
Case: SP1
On-state resistance: 70mΩ
Topology: MOSFET half-bridge + serial diodes; NTC thermistor
Produkt ist nicht verfügbar
APTMC170AM60CT1AG |
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Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.7kV; 37A; SP1; Press-in PCB; 350W
Pulsed drain current: 100A
Power dissipation: 350W
Technology: SiC
Drain current: 37A
Drain-source voltage: 1.7kV
Mechanical mounting: screw
Electrical mounting: Press-in PCB
Type of module: MOSFET transistor
Semiconductor structure: SiC diode/transistor
Case: SP1
On-state resistance: 70mΩ
Topology: MOSFET half-bridge + serial diodes; NTC thermistor
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.7kV; 37A; SP1; Press-in PCB; 350W
Pulsed drain current: 100A
Power dissipation: 350W
Technology: SiC
Drain current: 37A
Drain-source voltage: 1.7kV
Mechanical mounting: screw
Electrical mounting: Press-in PCB
Type of module: MOSFET transistor
Semiconductor structure: SiC diode/transistor
Case: SP1
On-state resistance: 70mΩ
Topology: MOSFET half-bridge + serial diodes; NTC thermistor
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
APTMC60TL11CT3AG |
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Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 22A; SP3F; Press-in PCB; 125W
Power dissipation: 125W
Semiconductor structure: SiC diode/transistor
Case: SP3F
Technology: SiC
Drain-source voltage: 1.2kV
Mechanical mounting: screw
Electrical mounting: Press-in PCB
Type of module: MOSFET transistor
On-state resistance: 98mΩ
Topology: NTC thermistor; three-level inverter; single-phase
Pulsed drain current: 55A
Drain current: 22A
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 22A; SP3F; Press-in PCB; 125W
Power dissipation: 125W
Semiconductor structure: SiC diode/transistor
Case: SP3F
Technology: SiC
Drain-source voltage: 1.2kV
Mechanical mounting: screw
Electrical mounting: Press-in PCB
Type of module: MOSFET transistor
On-state resistance: 98mΩ
Topology: NTC thermistor; three-level inverter; single-phase
Pulsed drain current: 55A
Drain current: 22A
Produkt ist nicht verfügbar
APTMC60TL11CT3AG |
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Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 22A; SP3F; Press-in PCB; 125W
Power dissipation: 125W
Semiconductor structure: SiC diode/transistor
Case: SP3F
Technology: SiC
Drain-source voltage: 1.2kV
Mechanical mounting: screw
Electrical mounting: Press-in PCB
Type of module: MOSFET transistor
On-state resistance: 98mΩ
Topology: NTC thermistor; three-level inverter; single-phase
Pulsed drain current: 55A
Drain current: 22A
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 22A; SP3F; Press-in PCB; 125W
Power dissipation: 125W
Semiconductor structure: SiC diode/transistor
Case: SP3F
Technology: SiC
Drain-source voltage: 1.2kV
Mechanical mounting: screw
Electrical mounting: Press-in PCB
Type of module: MOSFET transistor
On-state resistance: 98mΩ
Topology: NTC thermistor; three-level inverter; single-phase
Pulsed drain current: 55A
Drain current: 22A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
APTMC60TLM14CAG |
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Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 164A; SP6C; Idm: 440A; 925W
Power dissipation: 925W
Semiconductor structure: SiC diode/transistor
Case: SP6C
Technology: SiC
Drain-source voltage: 1.2kV
Mechanical mounting: screw
Electrical mounting: FASTON connectors; screw
Type of module: MOSFET transistor
On-state resistance: 12mΩ
Topology: three-level inverter; single-phase
Pulsed drain current: 440A
Drain current: 164A
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 164A; SP6C; Idm: 440A; 925W
Power dissipation: 925W
Semiconductor structure: SiC diode/transistor
Case: SP6C
Technology: SiC
Drain-source voltage: 1.2kV
Mechanical mounting: screw
Electrical mounting: FASTON connectors; screw
Type of module: MOSFET transistor
On-state resistance: 12mΩ
Topology: three-level inverter; single-phase
Pulsed drain current: 440A
Drain current: 164A
Produkt ist nicht verfügbar
APTMC60TLM14CAG |
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Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 164A; SP6C; Idm: 440A; 925W
Power dissipation: 925W
Semiconductor structure: SiC diode/transistor
Case: SP6C
Technology: SiC
Drain-source voltage: 1.2kV
Mechanical mounting: screw
Electrical mounting: FASTON connectors; screw
Type of module: MOSFET transistor
On-state resistance: 12mΩ
Topology: three-level inverter; single-phase
Pulsed drain current: 440A
Drain current: 164A
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 164A; SP6C; Idm: 440A; 925W
Power dissipation: 925W
Semiconductor structure: SiC diode/transistor
Case: SP6C
Technology: SiC
Drain-source voltage: 1.2kV
Mechanical mounting: screw
Electrical mounting: FASTON connectors; screw
Type of module: MOSFET transistor
On-state resistance: 12mΩ
Topology: three-level inverter; single-phase
Pulsed drain current: 440A
Drain current: 164A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
APTMC60TLM55CT3AG |
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Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 38A; SP3F; Press-in PCB; 263W
Power dissipation: 263W
Semiconductor structure: SiC diode/transistor
Case: SP3F
Technology: SiC
Drain-source voltage: 1.2kV
Mechanical mounting: screw
Electrical mounting: Press-in PCB
Type of module: MOSFET transistor
On-state resistance: 52mΩ
Topology: NTC thermistor; three-level inverter; single-phase
Pulsed drain current: 100A
Drain current: 38A
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 38A; SP3F; Press-in PCB; 263W
Power dissipation: 263W
Semiconductor structure: SiC diode/transistor
Case: SP3F
Technology: SiC
Drain-source voltage: 1.2kV
Mechanical mounting: screw
Electrical mounting: Press-in PCB
Type of module: MOSFET transistor
On-state resistance: 52mΩ
Topology: NTC thermistor; three-level inverter; single-phase
Pulsed drain current: 100A
Drain current: 38A
Produkt ist nicht verfügbar
APTMC60TLM55CT3AG |
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Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 38A; SP3F; Press-in PCB; 263W
Power dissipation: 263W
Semiconductor structure: SiC diode/transistor
Case: SP3F
Technology: SiC
Drain-source voltage: 1.2kV
Mechanical mounting: screw
Electrical mounting: Press-in PCB
Type of module: MOSFET transistor
On-state resistance: 52mΩ
Topology: NTC thermistor; three-level inverter; single-phase
Pulsed drain current: 100A
Drain current: 38A
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 38A; SP3F; Press-in PCB; 263W
Power dissipation: 263W
Semiconductor structure: SiC diode/transistor
Case: SP3F
Technology: SiC
Drain-source voltage: 1.2kV
Mechanical mounting: screw
Electrical mounting: Press-in PCB
Type of module: MOSFET transistor
On-state resistance: 52mΩ
Topology: NTC thermistor; three-level inverter; single-phase
Pulsed drain current: 100A
Drain current: 38A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
ARF475FL |
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Hersteller: MICROCHIP (MICROSEMI)
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; RF; 500V; 10A; 910W; T3A-8; 16dB
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Kind of transistor: RF
Drain-source voltage: 500V
Drain current: 10A
Power dissipation: 910W
Case: T3A-8
Gate-source voltage: ±30V
Kind of package: tube
Frequency: 128MHz
Kind of channel: depleted
Semiconductor structure: common source
Features of semiconductor devices: dual gate
Output power: 900W
Electrical mounting: FASTON connectors; soldering; THT
Open-loop gain: 16dB
Efficiency: 55%
Mechanical mounting: screw
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; RF; 500V; 10A; 910W; T3A-8; 16dB
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Kind of transistor: RF
Drain-source voltage: 500V
Drain current: 10A
Power dissipation: 910W
Case: T3A-8
Gate-source voltage: ±30V
Kind of package: tube
Frequency: 128MHz
Kind of channel: depleted
Semiconductor structure: common source
Features of semiconductor devices: dual gate
Output power: 900W
Electrical mounting: FASTON connectors; soldering; THT
Open-loop gain: 16dB
Efficiency: 55%
Mechanical mounting: screw
Produkt ist nicht verfügbar
ARF475FL |
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Hersteller: MICROCHIP (MICROSEMI)
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; RF; 500V; 10A; 910W; T3A-8; 16dB
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Kind of transistor: RF
Drain-source voltage: 500V
Drain current: 10A
Power dissipation: 910W
Case: T3A-8
Gate-source voltage: ±30V
Kind of package: tube
Frequency: 128MHz
Kind of channel: depleted
Semiconductor structure: common source
Features of semiconductor devices: dual gate
Output power: 900W
Electrical mounting: FASTON connectors; soldering; THT
Open-loop gain: 16dB
Efficiency: 55%
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; RF; 500V; 10A; 910W; T3A-8; 16dB
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Kind of transistor: RF
Drain-source voltage: 500V
Drain current: 10A
Power dissipation: 910W
Case: T3A-8
Gate-source voltage: ±30V
Kind of package: tube
Frequency: 128MHz
Kind of channel: depleted
Semiconductor structure: common source
Features of semiconductor devices: dual gate
Output power: 900W
Electrical mounting: FASTON connectors; soldering; THT
Open-loop gain: 16dB
Efficiency: 55%
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
CDLL4106 |
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Hersteller: MICROCHIP (MICROSEMI)
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 12V; 32mA; SMD; DO213AA; single diode; Ir: 50nA
Mounting: SMD
Case: DO213AA
Tolerance: ±5%
Semiconductor structure: single diode
Zener voltage: 12V
Zener current: 32mA
Leakage current: 50nA
Power dissipation: 0.5W
Type of diode: Zener
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 12V; 32mA; SMD; DO213AA; single diode; Ir: 50nA
Mounting: SMD
Case: DO213AA
Tolerance: ±5%
Semiconductor structure: single diode
Zener voltage: 12V
Zener current: 32mA
Leakage current: 50nA
Power dissipation: 0.5W
Type of diode: Zener
Produkt ist nicht verfügbar
CDLL4106 |
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Hersteller: MICROCHIP (MICROSEMI)
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 12V; 32mA; SMD; DO213AA; single diode; Ir: 50nA
Mounting: SMD
Case: DO213AA
Tolerance: ±5%
Semiconductor structure: single diode
Zener voltage: 12V
Zener current: 32mA
Leakage current: 50nA
Power dissipation: 0.5W
Type of diode: Zener
Anzahl je Verpackung: 272 Stücke
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 12V; 32mA; SMD; DO213AA; single diode; Ir: 50nA
Mounting: SMD
Case: DO213AA
Tolerance: ±5%
Semiconductor structure: single diode
Zener voltage: 12V
Zener current: 32mA
Leakage current: 50nA
Power dissipation: 0.5W
Type of diode: Zener
Anzahl je Verpackung: 272 Stücke
Produkt ist nicht verfügbar
CDLL4624 |
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Hersteller: MICROCHIP (MICROSEMI)
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 4.7V; 75mA; SMD; tape; DO213AA; single diode
Tolerance: ±5%
Semiconductor structure: single diode
Zener voltage: 4.7V
Zener current: 75mA
Leakage current: 5µA
Power dissipation: 0.5W
Kind of package: tape
Type of diode: Zener
Mounting: SMD
Case: DO213AA
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 4.7V; 75mA; SMD; tape; DO213AA; single diode
Tolerance: ±5%
Semiconductor structure: single diode
Zener voltage: 4.7V
Zener current: 75mA
Leakage current: 5µA
Power dissipation: 0.5W
Kind of package: tape
Type of diode: Zener
Mounting: SMD
Case: DO213AA
Produkt ist nicht verfügbar
CDLL4624 |
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Hersteller: MICROCHIP (MICROSEMI)
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 4.7V; 75mA; SMD; tape; DO213AA; single diode
Tolerance: ±5%
Semiconductor structure: single diode
Zener voltage: 4.7V
Zener current: 75mA
Leakage current: 5µA
Power dissipation: 0.5W
Kind of package: tape
Type of diode: Zener
Mounting: SMD
Case: DO213AA
Anzahl je Verpackung: 234 Stücke
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 4.7V; 75mA; SMD; tape; DO213AA; single diode
Tolerance: ±5%
Semiconductor structure: single diode
Zener voltage: 4.7V
Zener current: 75mA
Leakage current: 5µA
Power dissipation: 0.5W
Kind of package: tape
Type of diode: Zener
Mounting: SMD
Case: DO213AA
Anzahl je Verpackung: 234 Stücke
Produkt ist nicht verfügbar
CDLL4626 |
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Hersteller: MICROCHIP (MICROSEMI)
CDLL4626 SMD Zener diodes
CDLL4626 SMD Zener diodes
auf Bestellung 24 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
19+ | 3.88 EUR |
20+ | 3.66 EUR |
21+ | 3.52 EUR |
CDLL4627 |
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Hersteller: MICROCHIP (MICROSEMI)
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 6.2V; 61mA; SMD; DO213AA; single diode; Ir: 5uA
Mounting: SMD
Power dissipation: 0.5W
Type of diode: Zener
Case: DO213AA
Tolerance: ±5%
Semiconductor structure: single diode
Zener voltage: 6.2V
Zener current: 61mA
Leakage current: 5µA
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 6.2V; 61mA; SMD; DO213AA; single diode; Ir: 5uA
Mounting: SMD
Power dissipation: 0.5W
Type of diode: Zener
Case: DO213AA
Tolerance: ±5%
Semiconductor structure: single diode
Zener voltage: 6.2V
Zener current: 61mA
Leakage current: 5µA
auf Bestellung 23 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
19+ | 3.89 EUR |
CDLL4627 |
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Hersteller: MICROCHIP (MICROSEMI)
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 6.2V; 61mA; SMD; DO213AA; single diode; Ir: 5uA
Mounting: SMD
Power dissipation: 0.5W
Type of diode: Zener
Case: DO213AA
Tolerance: ±5%
Semiconductor structure: single diode
Zener voltage: 6.2V
Zener current: 61mA
Leakage current: 5µA
Anzahl je Verpackung: 1 Stücke
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 6.2V; 61mA; SMD; DO213AA; single diode; Ir: 5uA
Mounting: SMD
Power dissipation: 0.5W
Type of diode: Zener
Case: DO213AA
Tolerance: ±5%
Semiconductor structure: single diode
Zener voltage: 6.2V
Zener current: 61mA
Leakage current: 5µA
Anzahl je Verpackung: 1 Stücke
auf Bestellung 23 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
19+ | 3.89 EUR |
CDLL5522B |
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Hersteller: MICROCHIP (MICROSEMI)
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 4.7V; 81mA; SMD; tape; DO213AA; single diode
Kind of package: tape
Power dissipation: 0.5W
Type of diode: Zener
Mounting: SMD
Case: DO213AA
Tolerance: ±5%
Semiconductor structure: single diode
Zener voltage: 4.7V
Zener current: 81mA
Leakage current: 2µA
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 4.7V; 81mA; SMD; tape; DO213AA; single diode
Kind of package: tape
Power dissipation: 0.5W
Type of diode: Zener
Mounting: SMD
Case: DO213AA
Tolerance: ±5%
Semiconductor structure: single diode
Zener voltage: 4.7V
Zener current: 81mA
Leakage current: 2µA
Produkt ist nicht verfügbar
CDLL5522B |
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Hersteller: MICROCHIP (MICROSEMI)
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 4.7V; 81mA; SMD; tape; DO213AA; single diode
Kind of package: tape
Power dissipation: 0.5W
Type of diode: Zener
Mounting: SMD
Case: DO213AA
Tolerance: ±5%
Semiconductor structure: single diode
Zener voltage: 4.7V
Zener current: 81mA
Leakage current: 2µA
Anzahl je Verpackung: 137 Stücke
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 4.7V; 81mA; SMD; tape; DO213AA; single diode
Kind of package: tape
Power dissipation: 0.5W
Type of diode: Zener
Mounting: SMD
Case: DO213AA
Tolerance: ±5%
Semiconductor structure: single diode
Zener voltage: 4.7V
Zener current: 81mA
Leakage current: 2µA
Anzahl je Verpackung: 137 Stücke
Produkt ist nicht verfügbar
CDLL5711 |
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Hersteller: MICROCHIP (MICROSEMI)
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD; 50V; 15mA; DO213AA; reel,tape
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky switching
Case: DO213AA
Max. off-state voltage: 50V
Max. forward voltage: 1V
Load current: 15mA
Semiconductor structure: single diode
Leakage current: 0.2µA
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD; 50V; 15mA; DO213AA; reel,tape
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky switching
Case: DO213AA
Max. off-state voltage: 50V
Max. forward voltage: 1V
Load current: 15mA
Semiconductor structure: single diode
Leakage current: 0.2µA
auf Bestellung 7 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
7+ | 10.74 EUR |
CDLL5711 |
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Hersteller: MICROCHIP (MICROSEMI)
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD; 50V; 15mA; DO213AA; reel,tape
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky switching
Case: DO213AA
Max. off-state voltage: 50V
Max. forward voltage: 1V
Load current: 15mA
Semiconductor structure: single diode
Leakage current: 0.2µA
Anzahl je Verpackung: 1 Stücke
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD; 50V; 15mA; DO213AA; reel,tape
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky switching
Case: DO213AA
Max. off-state voltage: 50V
Max. forward voltage: 1V
Load current: 15mA
Semiconductor structure: single diode
Leakage current: 0.2µA
Anzahl je Verpackung: 1 Stücke
auf Bestellung 7 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
7+ | 10.74 EUR |
CDLL5819 |
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Hersteller: MICROCHIP (MICROSEMI)
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 45V; 1A; DO213AB
Mounting: SMD
Max. forward voltage: 0.49V
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 25A
Leakage current: 5mA
Type of diode: Schottky rectifying
Case: DO213AB
Max. off-state voltage: 45V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 45V; 1A; DO213AB
Mounting: SMD
Max. forward voltage: 0.49V
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 25A
Leakage current: 5mA
Type of diode: Schottky rectifying
Case: DO213AB
Max. off-state voltage: 45V
Produkt ist nicht verfügbar
CDLL5819 |
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Hersteller: MICROCHIP (MICROSEMI)
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 45V; 1A; DO213AB
Mounting: SMD
Max. forward voltage: 0.49V
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 25A
Leakage current: 5mA
Type of diode: Schottky rectifying
Case: DO213AB
Max. off-state voltage: 45V
Anzahl je Verpackung: 1 Stücke
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 45V; 1A; DO213AB
Mounting: SMD
Max. forward voltage: 0.49V
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 25A
Leakage current: 5mA
Type of diode: Schottky rectifying
Case: DO213AB
Max. off-state voltage: 45V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
CDLL827 |
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Hersteller: MICROCHIP (MICROSEMI)
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 6.2V; 7.5mA; SMD; DO213AA; single diode; Ir: 2uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 6.2V
Zener current: 7.5mA
Case: DO213AA
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 2µA
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 6.2V; 7.5mA; SMD; DO213AA; single diode; Ir: 2uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 6.2V
Zener current: 7.5mA
Case: DO213AA
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 2µA
Produkt ist nicht verfügbar
CDLL827 |
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Hersteller: MICROCHIP (MICROSEMI)
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 6.2V; 7.5mA; SMD; DO213AA; single diode; Ir: 2uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 6.2V
Zener current: 7.5mA
Case: DO213AA
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 2µA
Anzahl je Verpackung: 100 Stücke
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 6.2V; 7.5mA; SMD; DO213AA; single diode; Ir: 2uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 6.2V
Zener current: 7.5mA
Case: DO213AA
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 2µA
Anzahl je Verpackung: 100 Stücke
Produkt ist nicht verfügbar
EX256-FTQG100 |
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Hersteller: MICROCHIP (MICROSEMI)
Category: Programmable circuits
Description: IC: FPGA; SMD; TQFP100; Number of macrocells: 256; I/O: 81; 250MHz
Supply voltage: 2.3...2.7V DC
Number of inputs/outputs: 81
Frequency: 250MHz
Mounting: SMD
Number of gates: 12k
Case: TQFP100
Type of integrated circuit: FPGA
Number of macrocells: 256
Category: Programmable circuits
Description: IC: FPGA; SMD; TQFP100; Number of macrocells: 256; I/O: 81; 250MHz
Supply voltage: 2.3...2.7V DC
Number of inputs/outputs: 81
Frequency: 250MHz
Mounting: SMD
Number of gates: 12k
Case: TQFP100
Type of integrated circuit: FPGA
Number of macrocells: 256
Produkt ist nicht verfügbar
EX256-TQG100 |
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Hersteller: MICROCHIP (MICROSEMI)
Category: Programmable circuits
Description: IC: FPGA; SMD; TQFP100; Number of macrocells: 256; I/O: 81; 250MHz
Supply voltage: 2.3...2.7V DC
Number of inputs/outputs: 81
Frequency: 250MHz
Mounting: SMD
Number of gates: 12k
Case: TQFP100
Type of integrated circuit: FPGA
Number of macrocells: 256
Category: Programmable circuits
Description: IC: FPGA; SMD; TQFP100; Number of macrocells: 256; I/O: 81; 250MHz
Supply voltage: 2.3...2.7V DC
Number of inputs/outputs: 81
Frequency: 250MHz
Mounting: SMD
Number of gates: 12k
Case: TQFP100
Type of integrated circuit: FPGA
Number of macrocells: 256
Produkt ist nicht verfügbar
EX256-TQG100I |
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Hersteller: MICROCHIP (MICROSEMI)
Category: Programmable circuits
Description: IC: FPGA; SMD; TQFP100; Number of macrocells: 256; I/O: 81; 250MHz
Supply voltage: 2.3...2.7V DC
Number of inputs/outputs: 81
Frequency: 250MHz
Mounting: SMD
Number of gates: 12k
Case: TQFP100
Type of integrated circuit: FPGA
Number of macrocells: 256
Category: Programmable circuits
Description: IC: FPGA; SMD; TQFP100; Number of macrocells: 256; I/O: 81; 250MHz
Supply voltage: 2.3...2.7V DC
Number of inputs/outputs: 81
Frequency: 250MHz
Mounting: SMD
Number of gates: 12k
Case: TQFP100
Type of integrated circuit: FPGA
Number of macrocells: 256
Produkt ist nicht verfügbar
EX256-FTQG100 |
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Hersteller: MICROCHIP (MICROSEMI)
Category: Programmable circuits
Description: IC: FPGA; SMD; TQFP100; Number of macrocells: 256; I/O: 81; 250MHz
Supply voltage: 2.3...2.7V DC
Number of inputs/outputs: 81
Frequency: 250MHz
Mounting: SMD
Number of gates: 12k
Case: TQFP100
Type of integrated circuit: FPGA
Number of macrocells: 256
Anzahl je Verpackung: 90 Stücke
Category: Programmable circuits
Description: IC: FPGA; SMD; TQFP100; Number of macrocells: 256; I/O: 81; 250MHz
Supply voltage: 2.3...2.7V DC
Number of inputs/outputs: 81
Frequency: 250MHz
Mounting: SMD
Number of gates: 12k
Case: TQFP100
Type of integrated circuit: FPGA
Number of macrocells: 256
Anzahl je Verpackung: 90 Stücke
Produkt ist nicht verfügbar
EX256-TQG100 |
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Hersteller: MICROCHIP (MICROSEMI)
Category: Programmable circuits
Description: IC: FPGA; SMD; TQFP100; Number of macrocells: 256; I/O: 81; 250MHz
Supply voltage: 2.3...2.7V DC
Number of inputs/outputs: 81
Frequency: 250MHz
Mounting: SMD
Number of gates: 12k
Case: TQFP100
Type of integrated circuit: FPGA
Number of macrocells: 256
Anzahl je Verpackung: 90 Stücke
Category: Programmable circuits
Description: IC: FPGA; SMD; TQFP100; Number of macrocells: 256; I/O: 81; 250MHz
Supply voltage: 2.3...2.7V DC
Number of inputs/outputs: 81
Frequency: 250MHz
Mounting: SMD
Number of gates: 12k
Case: TQFP100
Type of integrated circuit: FPGA
Number of macrocells: 256
Anzahl je Verpackung: 90 Stücke
Produkt ist nicht verfügbar
EX256-TQG100I |
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Hersteller: MICROCHIP (MICROSEMI)
Category: Programmable circuits
Description: IC: FPGA; SMD; TQFP100; Number of macrocells: 256; I/O: 81; 250MHz
Supply voltage: 2.3...2.7V DC
Number of inputs/outputs: 81
Frequency: 250MHz
Mounting: SMD
Number of gates: 12k
Case: TQFP100
Type of integrated circuit: FPGA
Number of macrocells: 256
Anzahl je Verpackung: 90 Stücke
Category: Programmable circuits
Description: IC: FPGA; SMD; TQFP100; Number of macrocells: 256; I/O: 81; 250MHz
Supply voltage: 2.3...2.7V DC
Number of inputs/outputs: 81
Frequency: 250MHz
Mounting: SMD
Number of gates: 12k
Case: TQFP100
Type of integrated circuit: FPGA
Number of macrocells: 256
Anzahl je Verpackung: 90 Stücke
Produkt ist nicht verfügbar
HPFM-00117 |
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Hersteller: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: gate driver board; PCB; 3.3kV; 14.5÷16VDC; 15kHz; 30A
Type of module: gate driver board
Application: for medium and high power application
Mounting: PCB
Operating temperature: -40...85°C
Voltage class: 3.3kV
Supply voltage: 14.5...16V DC
Frequency: 15kHz
Output current: 30A
Kind of output: IGBT driver
Integrated circuit features: integrated DC/DC converter
Related items: ASBK-014
Trade name: AgileSwitch®
Category: IGBT modules
Description: Module: gate driver board; PCB; 3.3kV; 14.5÷16VDC; 15kHz; 30A
Type of module: gate driver board
Application: for medium and high power application
Mounting: PCB
Operating temperature: -40...85°C
Voltage class: 3.3kV
Supply voltage: 14.5...16V DC
Frequency: 15kHz
Output current: 30A
Kind of output: IGBT driver
Integrated circuit features: integrated DC/DC converter
Related items: ASBK-014
Trade name: AgileSwitch®
Produkt ist nicht verfügbar
HPFM-00117 |
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Hersteller: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: gate driver board; PCB; 3.3kV; 14.5÷16VDC; 15kHz; 30A
Type of module: gate driver board
Application: for medium and high power application
Mounting: PCB
Operating temperature: -40...85°C
Voltage class: 3.3kV
Supply voltage: 14.5...16V DC
Frequency: 15kHz
Output current: 30A
Kind of output: IGBT driver
Integrated circuit features: integrated DC/DC converter
Related items: ASBK-014
Trade name: AgileSwitch®
Anzahl je Verpackung: 1 Stücke
Category: IGBT modules
Description: Module: gate driver board; PCB; 3.3kV; 14.5÷16VDC; 15kHz; 30A
Type of module: gate driver board
Application: for medium and high power application
Mounting: PCB
Operating temperature: -40...85°C
Voltage class: 3.3kV
Supply voltage: 14.5...16V DC
Frequency: 15kHz
Output current: 30A
Kind of output: IGBT driver
Integrated circuit features: integrated DC/DC converter
Related items: ASBK-014
Trade name: AgileSwitch®
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
LX5535LQ |
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Hersteller: MICROCHIP (MICROSEMI)
Category: SMD operational amplifiers
Description: IC: RF amplifier; 2.4÷2.5GHz; Ch: 1; MLPQ16
Type of integrated circuit: RF amplifier
Bandwidth: 2.4...2.5GHz
Mounting: SMT
Number of channels: 1
Case: MLPQ16
Category: SMD operational amplifiers
Description: IC: RF amplifier; 2.4÷2.5GHz; Ch: 1; MLPQ16
Type of integrated circuit: RF amplifier
Bandwidth: 2.4...2.5GHz
Mounting: SMT
Number of channels: 1
Case: MLPQ16
Produkt ist nicht verfügbar
LX5535LQ |
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Hersteller: MICROCHIP (MICROSEMI)
Category: SMD operational amplifiers
Description: IC: RF amplifier; 2.4÷2.5GHz; Ch: 1; MLPQ16
Type of integrated circuit: RF amplifier
Bandwidth: 2.4...2.5GHz
Mounting: SMT
Number of channels: 1
Case: MLPQ16
Anzahl je Verpackung: 4500 Stücke
Category: SMD operational amplifiers
Description: IC: RF amplifier; 2.4÷2.5GHz; Ch: 1; MLPQ16
Type of integrated circuit: RF amplifier
Bandwidth: 2.4...2.5GHz
Mounting: SMT
Number of channels: 1
Case: MLPQ16
Anzahl je Verpackung: 4500 Stücke
Produkt ist nicht verfügbar
LX7165-01CSP |
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Hersteller: MICROCHIP (MICROSEMI)
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DC/DC converter; Uin: 3÷5.5VDC; Uout: 0.9VDC; 5A; WLCSP20
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 3...5.5V DC
Output voltage: 0.9V DC
Output current: 5A
Case: WLCSP20
Mounting: SMD
Frequency: 1875kHz
Topology: buck
Number of channels: 1
Operating temperature: 0...85°C
Kind of package: bulk
Interface: I2C; serial
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DC/DC converter; Uin: 3÷5.5VDC; Uout: 0.9VDC; 5A; WLCSP20
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 3...5.5V DC
Output voltage: 0.9V DC
Output current: 5A
Case: WLCSP20
Mounting: SMD
Frequency: 1875kHz
Topology: buck
Number of channels: 1
Operating temperature: 0...85°C
Kind of package: bulk
Interface: I2C; serial
Produkt ist nicht verfügbar
LX7165-01CSP |
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Hersteller: MICROCHIP (MICROSEMI)
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DC/DC converter; Uin: 3÷5.5VDC; Uout: 0.9VDC; 5A; WLCSP20
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 3...5.5V DC
Output voltage: 0.9V DC
Output current: 5A
Case: WLCSP20
Mounting: SMD
Frequency: 1875kHz
Topology: buck
Number of channels: 1
Operating temperature: 0...85°C
Kind of package: bulk
Interface: I2C; serial
Anzahl je Verpackung: 1 Stücke
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DC/DC converter; Uin: 3÷5.5VDC; Uout: 0.9VDC; 5A; WLCSP20
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 3...5.5V DC
Output voltage: 0.9V DC
Output current: 5A
Case: WLCSP20
Mounting: SMD
Frequency: 1875kHz
Topology: buck
Number of channels: 1
Operating temperature: 0...85°C
Kind of package: bulk
Interface: I2C; serial
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
M2GL010-FGG484 |
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Hersteller: MICROCHIP (MICROSEMI)
M2GL010-FGG484 Programmable circuits
M2GL010-FGG484 Programmable circuits
Produkt ist nicht verfügbar
M2S005-TQG144 |
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Hersteller: MICROCHIP (MICROSEMI)
M2S005-TQG144 Programmable circuits
M2S005-TQG144 Programmable circuits
Produkt ist nicht verfügbar
M2S010-TQG144 |
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Hersteller: MICROCHIP (MICROSEMI)
Category: Programmable circuits
Description: IC: FPGA; SMD; TQFP144; I/O: 84; 1.2VDC; 166MHz; RAM: 400kB
Mounting: SMD
Case: TQFP144
Memory capacity: 256kB
RAM memory capacity: 400kB
Frequency: 166MHz
Supply voltage: 1.2V DC
Type of integrated circuit: FPGA
Number of inputs/outputs: 84
Category: Programmable circuits
Description: IC: FPGA; SMD; TQFP144; I/O: 84; 1.2VDC; 166MHz; RAM: 400kB
Mounting: SMD
Case: TQFP144
Memory capacity: 256kB
RAM memory capacity: 400kB
Frequency: 166MHz
Supply voltage: 1.2V DC
Type of integrated circuit: FPGA
Number of inputs/outputs: 84
Produkt ist nicht verfügbar
M2S010-TQG144I |
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Hersteller: MICROCHIP (MICROSEMI)
Category: Programmable circuits
Description: IC: FPGA; SMD; TQFP144; I/O: 84; 1.2VDC; 166MHz; RAM: 400kB
Mounting: SMD
Case: TQFP144
Memory capacity: 256kB
RAM memory capacity: 400kB
Frequency: 166MHz
Supply voltage: 1.2V DC
Type of integrated circuit: FPGA
Number of inputs/outputs: 84
Category: Programmable circuits
Description: IC: FPGA; SMD; TQFP144; I/O: 84; 1.2VDC; 166MHz; RAM: 400kB
Mounting: SMD
Case: TQFP144
Memory capacity: 256kB
RAM memory capacity: 400kB
Frequency: 166MHz
Supply voltage: 1.2V DC
Type of integrated circuit: FPGA
Number of inputs/outputs: 84
Produkt ist nicht verfügbar
M2S010-TQG144 |
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Hersteller: MICROCHIP (MICROSEMI)
Category: Programmable circuits
Description: IC: FPGA; SMD; TQFP144; I/O: 84; 1.2VDC; 166MHz; RAM: 400kB
Mounting: SMD
Case: TQFP144
Memory capacity: 256kB
RAM memory capacity: 400kB
Frequency: 166MHz
Supply voltage: 1.2V DC
Type of integrated circuit: FPGA
Number of inputs/outputs: 84
Category: Programmable circuits
Description: IC: FPGA; SMD; TQFP144; I/O: 84; 1.2VDC; 166MHz; RAM: 400kB
Mounting: SMD
Case: TQFP144
Memory capacity: 256kB
RAM memory capacity: 400kB
Frequency: 166MHz
Supply voltage: 1.2V DC
Type of integrated circuit: FPGA
Number of inputs/outputs: 84
Produkt ist nicht verfügbar