Produkte > MICROCHIP (MICROSEMI) > Alle Produkte des Herstellers MICROCHIP (MICROSEMI) (4150) > Seite 64 nach 70
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| MSCDC300A70AG | MICROCHIP (MICROSEMI) |
Category: Diode modules Description: Module: diode; double series; 700V; 300A; SP6C; screw; screw; SiC Type of module: diode Semiconductor structure: double series Max. off-state voltage: 700V Load current: 300A Case: SP6C Electrical mounting: screw Mechanical mounting: screw Features of semiconductor devices: Schottky Technology: SiC |
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| MSCDC300A70AG | MICROCHIP (MICROSEMI) |
Category: Diode modules Description: Module: diode; double series; 700V; 300A; SP6C; screw; screw; SiC Type of module: diode Semiconductor structure: double series Max. off-state voltage: 700V Load current: 300A Case: SP6C Electrical mounting: screw Mechanical mounting: screw Features of semiconductor devices: Schottky Technology: SiC Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| MSCDC450A120AG | MICROCHIP (MICROSEMI) |
 Category: Diode modulesDescription: Module: diode; double series; 1.2kV; 450A; SP6C; screw; screw; SiC Mechanical mounting: screw Electrical mounting: screw Case: SP6C Type of module: diode Features of semiconductor devices: Schottky Technology: SiC Max. off-state voltage: 1.2kV Load current: 450A Semiconductor structure: double series |
Produkt ist nicht verfügbar |
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| MSCDC450A120AG | MICROCHIP (MICROSEMI) |
Category: Diode modules Description: Module: diode; double series; 1.2kV; 450A; SP6C; screw; screw; SiC Mechanical mounting: screw Electrical mounting: screw Case: SP6C Type of module: diode Features of semiconductor devices: Schottky Technology: SiC Max. off-state voltage: 1.2kV Load current: 450A Semiconductor structure: double series Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| MSCDC450A170AG | MICROCHIP (MICROSEMI) |
Category: Diode modules Description: Module: diode; double series; 1.7kV; 450A; SP6C; screw; screw; SiC Type of module: diode Semiconductor structure: double series Max. off-state voltage: 1.7kV Load current: 450A Case: SP6C Electrical mounting: screw Mechanical mounting: screw Features of semiconductor devices: Schottky Technology: SiC |
Produkt ist nicht verfügbar |
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| MSCDC450A170AG | MICROCHIP (MICROSEMI) |
Category: Diode modules Description: Module: diode; double series; 1.7kV; 450A; SP6C; screw; screw; SiC Type of module: diode Semiconductor structure: double series Max. off-state voltage: 1.7kV Load current: 450A Case: SP6C Electrical mounting: screw Mechanical mounting: screw Features of semiconductor devices: Schottky Technology: SiC Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| MSCDC450A70AG | MICROCHIP (MICROSEMI) |
Category: Diode modules Description: Module: diode; double series; 700V; 450A; SP6C; screw; screw; SiC Type of module: diode Semiconductor structure: double series Max. off-state voltage: 700V Load current: 450A Case: SP6C Electrical mounting: screw Mechanical mounting: screw Features of semiconductor devices: Schottky Technology: SiC |
Produkt ist nicht verfügbar |
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| MSCDC450A70AG | MICROCHIP (MICROSEMI) |
Category: Diode modules Description: Module: diode; double series; 700V; 450A; SP6C; screw; screw; SiC Type of module: diode Semiconductor structure: double series Max. off-state voltage: 700V Load current: 450A Case: SP6C Electrical mounting: screw Mechanical mounting: screw Features of semiconductor devices: Schottky Technology: SiC Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| MSCDC50H1201AG | MICROCHIP (MICROSEMI) |
Category: Sing. ph. diode bridge rectif. - others Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 50A; screw; SP1F Max. forward voltage: 2.1V Max. off-state voltage: 1.2kV Leads: Ø1,3±0,1mm Kind of package: bulk Electrical mounting: Press-in PCB Mechanical mounting: screw Version: module Case: SP1F Features of semiconductor devices: Schottky Technology: SiC Load current: 50A Type of bridge rectifier: single-phase |
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| MSCDC50H1201AG | MICROCHIP (MICROSEMI) |
Category: Sing. ph. diode bridge rectif. - others Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 50A; screw; SP1F Max. forward voltage: 2.1V Max. off-state voltage: 1.2kV Leads: Ø1,3±0,1mm Kind of package: bulk Electrical mounting: Press-in PCB Mechanical mounting: screw Version: module Case: SP1F Features of semiconductor devices: Schottky Technology: SiC Load current: 50A Type of bridge rectifier: single-phase Anzahl je Verpackung: 1 Stücke |
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| MSCDC50H1701AG | MICROCHIP (MICROSEMI) |
Category: Sing. ph. diode bridge rectif. - others Description: Bridge rectifier: single-phase; Urmax: 1.7kV; If: 50A; screw; SP1F Max. off-state voltage: 1.7kV Load current: 50A Case: SP1F Version: module Max. forward voltage: 2V Electrical mounting: Press-in PCB Mechanical mounting: screw Features of semiconductor devices: Schottky Kind of package: bulk Technology: SiC Leads: Ø1,3±0,1mm Type of bridge rectifier: single-phase |
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| MSCDC50H1701AG | MICROCHIP (MICROSEMI) |
Category: Sing. ph. diode bridge rectif. - others Description: Bridge rectifier: single-phase; Urmax: 1.7kV; If: 50A; screw; SP1F Max. off-state voltage: 1.7kV Load current: 50A Case: SP1F Version: module Max. forward voltage: 2V Electrical mounting: Press-in PCB Mechanical mounting: screw Features of semiconductor devices: Schottky Kind of package: bulk Technology: SiC Leads: Ø1,3±0,1mm Type of bridge rectifier: single-phase Anzahl je Verpackung: 1 Stücke |
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| MSCDC50H701AG | MICROCHIP (MICROSEMI) |
Category: Sing. ph. diode bridge rectif. - others Description: Bridge rectifier: single-phase; Urmax: 700V; If: 50A; Press-in PCB Max. off-state voltage: 700V Load current: 50A Case: SP1F Version: module Max. forward voltage: 1.9V Electrical mounting: Press-in PCB Mechanical mounting: screw Features of semiconductor devices: Schottky Kind of package: bulk Technology: SiC Leads: Ø1,3±0,1mm Type of bridge rectifier: single-phase |
Produkt ist nicht verfügbar |
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| MSCDC50H701AG | MICROCHIP (MICROSEMI) |
Category: Sing. ph. diode bridge rectif. - others Description: Bridge rectifier: single-phase; Urmax: 700V; If: 50A; Press-in PCB Max. off-state voltage: 700V Load current: 50A Case: SP1F Version: module Max. forward voltage: 1.9V Electrical mounting: Press-in PCB Mechanical mounting: screw Features of semiconductor devices: Schottky Kind of package: bulk Technology: SiC Leads: Ø1,3±0,1mm Type of bridge rectifier: single-phase Anzahl je Verpackung: 1 Stücke |
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| MSCDC50X1201AG | MICROCHIP (MICROSEMI) |
Category: Three phase diode bridge rectifiers Description: Bridge rectifier: three-phase; Urmax: 1.2kV; 50A; Press-in PCB Max. forward voltage: 2.1V Max. off-state voltage: 1.2kV Leads: Ø1,3±0,1mm Electrical mounting: Press-in PCB Mechanical mounting: screw Version: module Case: SP1F Features of semiconductor devices: Schottky Technology: SiC Load current: 50A Type of bridge rectifier: three-phase |
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| MSCDC50X1201AG | MICROCHIP (MICROSEMI) |
Category: Three phase diode bridge rectifiers Description: Bridge rectifier: three-phase; Urmax: 1.2kV; 50A; Press-in PCB Max. forward voltage: 2.1V Max. off-state voltage: 1.2kV Leads: Ø1,3±0,1mm Electrical mounting: Press-in PCB Mechanical mounting: screw Version: module Case: SP1F Features of semiconductor devices: Schottky Technology: SiC Load current: 50A Type of bridge rectifier: three-phase Anzahl je Verpackung: 1 Stücke |
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| MSCDC50X1701AG | MICROCHIP (MICROSEMI) |
Category: Three phase diode bridge rectifiers Description: Bridge rectifier: three-phase; Urmax: 1.7kV; 50A; Press-in PCB Max. off-state voltage: 1.7kV Load current: 50A Case: SP1F Version: module Max. forward voltage: 1.8V Electrical mounting: Press-in PCB Mechanical mounting: screw Features of semiconductor devices: Schottky Technology: SiC Leads: Ø1,3±0,1mm Type of bridge rectifier: three-phase |
Produkt ist nicht verfügbar |
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| MSCDC50X1701AG | MICROCHIP (MICROSEMI) |
Category: Three phase diode bridge rectifiers Description: Bridge rectifier: three-phase; Urmax: 1.7kV; 50A; Press-in PCB Max. off-state voltage: 1.7kV Load current: 50A Case: SP1F Version: module Max. forward voltage: 1.8V Electrical mounting: Press-in PCB Mechanical mounting: screw Features of semiconductor devices: Schottky Technology: SiC Leads: Ø1,3±0,1mm Type of bridge rectifier: three-phase Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| MSCDC50X701AG | MICROCHIP (MICROSEMI) |
Category: Three phase diode bridge rectifiers Description: Bridge rectifier: three-phase; Urmax: 700V; 50A; Press-in PCB Max. off-state voltage: 700V Load current: 50A Case: SP1F Version: module Max. forward voltage: 1.9V Electrical mounting: Press-in PCB Mechanical mounting: screw Features of semiconductor devices: Schottky Technology: SiC Leads: Ø1,3±0,1mm Type of bridge rectifier: three-phase |
Produkt ist nicht verfügbar |
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| MSCDC50X701AG | MICROCHIP (MICROSEMI) |
Category: Three phase diode bridge rectifiers Description: Bridge rectifier: three-phase; Urmax: 700V; 50A; Press-in PCB Max. off-state voltage: 700V Load current: 50A Case: SP1F Version: module Max. forward voltage: 1.9V Electrical mounting: Press-in PCB Mechanical mounting: screw Features of semiconductor devices: Schottky Technology: SiC Leads: Ø1,3±0,1mm Type of bridge rectifier: three-phase Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| MSCDC600A120AG | MICROCHIP (MICROSEMI) |
Category: Diode modules Description: Module: diode; double series; 1.2kV; 600A; SP6C; screw; screw; SiC Mechanical mounting: screw Electrical mounting: screw Case: SP6C Type of module: diode Features of semiconductor devices: Schottky Technology: SiC Max. off-state voltage: 1.2kV Load current: 600A Semiconductor structure: double series |
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| MSCDC600A120AG | MICROCHIP (MICROSEMI) |
Category: Diode modules Description: Module: diode; double series; 1.2kV; 600A; SP6C; screw; screw; SiC Mechanical mounting: screw Electrical mounting: screw Case: SP6C Type of module: diode Features of semiconductor devices: Schottky Technology: SiC Max. off-state voltage: 1.2kV Load current: 600A Semiconductor structure: double series Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| MSCDC600A170AG | MICROCHIP (MICROSEMI) |
Category: Diode modules Description: Module: diode; double series; 1.7kV; 600A; SP6C; screw; screw; SiC Type of module: diode Semiconductor structure: double series Max. off-state voltage: 1.7kV Load current: 600A Case: SP6C Electrical mounting: screw Mechanical mounting: screw Features of semiconductor devices: Schottky Technology: SiC |
Produkt ist nicht verfügbar |
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| MSCDC600A170AG | MICROCHIP (MICROSEMI) |
Category: Diode modules Description: Module: diode; double series; 1.7kV; 600A; SP6C; screw; screw; SiC Type of module: diode Semiconductor structure: double series Max. off-state voltage: 1.7kV Load current: 600A Case: SP6C Electrical mounting: screw Mechanical mounting: screw Features of semiconductor devices: Schottky Technology: SiC Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| MSCDC600A70AG | MICROCHIP (MICROSEMI) |
Category: Diode modules Description: Module: diode; double series; 700V; 600A; SP6C; screw; screw; SiC Type of module: diode Semiconductor structure: double series Max. off-state voltage: 700V Load current: 600A Case: SP6C Electrical mounting: screw Mechanical mounting: screw Features of semiconductor devices: Schottky Technology: SiC |
Produkt ist nicht verfügbar |
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| MSCDC600A70AG | MICROCHIP (MICROSEMI) |
Category: Diode modules Description: Module: diode; double series; 700V; 600A; SP6C; screw; screw; SiC Type of module: diode Semiconductor structure: double series Max. off-state voltage: 700V Load current: 600A Case: SP6C Electrical mounting: screw Mechanical mounting: screw Features of semiconductor devices: Schottky Technology: SiC Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| MSCGL40X120T3AG | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Electrical mounting: Press-in PCB Mechanical mounting: screw Topology: IGBT three-phase bridge; NTC thermistor Technology: Trench Type of module: IGBT Max. off-state voltage: 1.2kV Collector current: 40A Case: SP3F Semiconductor structure: transistor/transistor |
Produkt ist nicht verfügbar |
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| MSCGL40X120T3AG | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Electrical mounting: Press-in PCB Mechanical mounting: screw Topology: IGBT three-phase bridge; NTC thermistor Technology: Trench Type of module: IGBT Max. off-state voltage: 1.2kV Collector current: 40A Case: SP3F Semiconductor structure: transistor/transistor |
Produkt ist nicht verfügbar |
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| MSCGTQ100HD65C1AG | MICROCHIP (MICROSEMI) |
MSCGTQ100HD65C1AG IGBT modules |
Produkt ist nicht verfügbar |
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| MSCM20AM058G | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 200V; 250A; LP8; SiC; screw Type of module: MOSFET transistor Technology: SiC Topology: MOSFET half-bridge Case: LP8 Semiconductor structure: transistor/transistor Drain-source voltage: 200V Drain current: 250A On-state resistance: 5mΩ Mechanical mounting: screw |
Produkt ist nicht verfügbar |
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| MSCM20AM058G | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 200V; 250A; LP8; SiC; screw Type of module: MOSFET transistor Technology: SiC Topology: MOSFET half-bridge Case: LP8 Semiconductor structure: transistor/transistor Drain-source voltage: 200V Drain current: 250A On-state resistance: 5mΩ Mechanical mounting: screw Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| MSCM20XM10T3XG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 200V; 84A; SP3X; SiC; screw Type of module: MOSFET transistor Technology: SiC Topology: MOSFET three-phase bridge Case: SP3X Semiconductor structure: transistor/transistor Drain-source voltage: 200V Drain current: 84A On-state resistance: 10mΩ Mechanical mounting: screw |
Produkt ist nicht verfügbar |
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| MSCM20XM10T3XG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 200V; 84A; SP3X; SiC; screw Type of module: MOSFET transistor Technology: SiC Topology: MOSFET three-phase bridge Case: SP3X Semiconductor structure: transistor/transistor Drain-source voltage: 200V Drain current: 84A On-state resistance: 10mΩ Mechanical mounting: screw Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| MSCM20XM16F4G | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 200V; 77A; SP4; SiC; screw Type of module: MOSFET transistor Technology: SiC Topology: MOSFET three-phase bridge Case: SP4 Semiconductor structure: transistor/transistor Drain-source voltage: 200V Drain current: 77A On-state resistance: 16mΩ Electrical mounting: FASTON connectors; screw Mechanical mounting: screw |
Produkt ist nicht verfügbar |
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| MSCM20XM16F4G | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 200V; 77A; SP4; SiC; screw Type of module: MOSFET transistor Technology: SiC Topology: MOSFET three-phase bridge Case: SP4 Semiconductor structure: transistor/transistor Drain-source voltage: 200V Drain current: 77A On-state resistance: 16mΩ Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Anzahl je Verpackung: 1 Stücke |
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| MSCMC90AM12C3AG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/tiristor/transistor; 900V; SP3F; Press-in PCB Type of module: MOSFET transistor Semiconductor structure: SiC diode/tiristor/transistor Drain-source voltage: 900V Case: SP3F Topology: Vienna Rectifier Electrical mounting: Press-in PCB Technology: SiC Mechanical mounting: screw |
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| MSCMC90AM12C3AG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/tiristor/transistor; 900V; SP3F; Press-in PCB Type of module: MOSFET transistor Semiconductor structure: SiC diode/tiristor/transistor Drain-source voltage: 900V Case: SP3F Topology: Vienna Rectifier Electrical mounting: Press-in PCB Technology: SiC Mechanical mounting: screw Anzahl je Verpackung: 1 Stücke |
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| MSCSM120AM027CD3AG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 1.2kV; 584A; D3; Idm: 1400A; 2.97kW Case: D3 Topology: MOSFET half-bridge + parrallel diodes Pulsed drain current: 1400A Semiconductor structure: SiC diode/transistor Drain-source voltage: 1.2kV Drain current: 584A On-state resistance: 3.5mΩ Power dissipation: 2.97kW Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: MOSFET transistor Technology: SiC |
Produkt ist nicht verfügbar |
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| MSCSM120AM027CD3AG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 1.2kV; 584A; D3; Idm: 1400A; 2.97kW Case: D3 Topology: MOSFET half-bridge + parrallel diodes Pulsed drain current: 1400A Semiconductor structure: SiC diode/transistor Drain-source voltage: 1.2kV Drain current: 584A On-state resistance: 3.5mΩ Power dissipation: 2.97kW Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: MOSFET transistor Technology: SiC Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| MSCSM120AM027CT6AG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 1.2kV; 584A; SP6C; Idm: 1400A; 2.97kW Case: SP6C Topology: MOSFET half-bridge + parrallel diodes; NTC thermistor Pulsed drain current: 1400A Semiconductor structure: SiC diode/transistor Drain-source voltage: 1.2kV Drain current: 584A On-state resistance: 3.5mΩ Power dissipation: 2.97kW Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: MOSFET transistor Technology: SiC |
Produkt ist nicht verfügbar |
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| MSCSM120AM027CT6AG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 1.2kV; 584A; SP6C; Idm: 1400A; 2.97kW Case: SP6C Topology: MOSFET half-bridge + parrallel diodes; NTC thermistor Pulsed drain current: 1400A Semiconductor structure: SiC diode/transistor Drain-source voltage: 1.2kV Drain current: 584A On-state resistance: 3.5mΩ Power dissipation: 2.97kW Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: MOSFET transistor Technology: SiC Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| MSCSM120AM042CD3AG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 1.2kV; 395A; D3; Idm: 990A; 2031W; SiC Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Technology: SiC Topology: MOSFET half-bridge + parrallel diodes Pulsed drain current: 990A Case: D3 Semiconductor structure: SiC diode/transistor Drain-source voltage: 1.2kV Drain current: 395A On-state resistance: 5.2mΩ Power dissipation: 2031W Type of module: MOSFET transistor |
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| MSCSM120AM042CD3AG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 1.2kV; 395A; D3; Idm: 990A; 2031W; SiC Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Technology: SiC Topology: MOSFET half-bridge + parrallel diodes Pulsed drain current: 990A Case: D3 Semiconductor structure: SiC diode/transistor Drain-source voltage: 1.2kV Drain current: 395A On-state resistance: 5.2mΩ Power dissipation: 2031W Type of module: MOSFET transistor Anzahl je Verpackung: 1 Stücke |
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| MSCSM120AM042CT6AG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 1.2kV; 395A; SP6C; Idm: 990A; 2031W Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Technology: SiC Topology: MOSFET half-bridge + parrallel diodes; NTC thermistor Pulsed drain current: 990A Case: SP6C Semiconductor structure: SiC diode/transistor Drain-source voltage: 1.2kV Drain current: 395A On-state resistance: 5.2mΩ Power dissipation: 2031W Type of module: MOSFET transistor |
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| MSCSM120AM042CT6AG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 1.2kV; 395A; SP6C; Idm: 990A; 2031W Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Technology: SiC Topology: MOSFET half-bridge + parrallel diodes; NTC thermistor Pulsed drain current: 990A Case: SP6C Semiconductor structure: SiC diode/transistor Drain-source voltage: 1.2kV Drain current: 395A On-state resistance: 5.2mΩ Power dissipation: 2031W Type of module: MOSFET transistor Anzahl je Verpackung: 1 Stücke |
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| MSCSM120AM08CT3AG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 1.2kV; 268A; SP3F; Press-in PCB Case: SP3F Topology: MOSFET half-bridge + parrallel diodes; NTC thermistor Pulsed drain current: 675A Semiconductor structure: SiC diode/transistor Drain-source voltage: 1.2kV Drain current: 268A On-state resistance: 7.8mΩ Power dissipation: 1409W Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: MOSFET transistor Technology: SiC |
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| MSCSM120AM08CT3AG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 1.2kV; 268A; SP3F; Press-in PCB Case: SP3F Topology: MOSFET half-bridge + parrallel diodes; NTC thermistor Pulsed drain current: 675A Semiconductor structure: SiC diode/transistor Drain-source voltage: 1.2kV Drain current: 268A On-state resistance: 7.8mΩ Power dissipation: 1409W Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: MOSFET transistor Technology: SiC Anzahl je Verpackung: 1 Stücke |
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| MSCSM120AM11CT3AG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 1.2kV; 202A; SP3F; Press-in PCB Case: SP3F Topology: MOSFET half-bridge + parrallel diodes; NTC thermistor Pulsed drain current: 500A Semiconductor structure: SiC diode/transistor Drain-source voltage: 1.2kV Drain current: 202A On-state resistance: 10.4mΩ Power dissipation: 1067W Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: MOSFET transistor Technology: SiC |
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| MSCSM120AM11CT3AG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 1.2kV; 202A; SP3F; Press-in PCB Case: SP3F Topology: MOSFET half-bridge + parrallel diodes; NTC thermistor Pulsed drain current: 500A Semiconductor structure: SiC diode/transistor Drain-source voltage: 1.2kV Drain current: 202A On-state resistance: 10.4mΩ Power dissipation: 1067W Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: MOSFET transistor Technology: SiC Anzahl je Verpackung: 1 Stücke |
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| MSCSM120AM16CT1AG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 1.2kV; 138A; SP1F; Press-in PCB Power dissipation: 745W Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: MOSFET transistor Technology: SiC Topology: MOSFET half-bridge + parrallel diodes; NTC thermistor Pulsed drain current: 350A Case: SP1F Semiconductor structure: SiC diode/transistor Drain-source voltage: 1.2kV Drain current: 138A On-state resistance: 16mΩ |
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| MSCSM120AM16CT1AG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 1.2kV; 138A; SP1F; Press-in PCB Power dissipation: 745W Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: MOSFET transistor Technology: SiC Topology: MOSFET half-bridge + parrallel diodes; NTC thermistor Pulsed drain current: 350A Case: SP1F Semiconductor structure: SiC diode/transistor Drain-source voltage: 1.2kV Drain current: 138A On-state resistance: 16mΩ Anzahl je Verpackung: 1 Stücke |
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| MSCSM120AM31CT1AG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 1.2kV; 71A; SP1F; Press-in PCB; 395W Case: SP1F Topology: MOSFET half-bridge + parrallel diodes; NTC thermistor Pulsed drain current: 180A Semiconductor structure: SiC diode/transistor Drain-source voltage: 1.2kV Drain current: 71A On-state resistance: 31mΩ Power dissipation: 395W Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: MOSFET transistor Technology: SiC |
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| MSCSM120AM31CT1AG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 1.2kV; 71A; SP1F; Press-in PCB; 395W Case: SP1F Topology: MOSFET half-bridge + parrallel diodes; NTC thermistor Pulsed drain current: 180A Semiconductor structure: SiC diode/transistor Drain-source voltage: 1.2kV Drain current: 71A On-state resistance: 31mΩ Power dissipation: 395W Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: MOSFET transistor Technology: SiC Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||
| MSCSM120AM50CT1AG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 1.2kV; 44A; SP1F; Press-in PCB; 245W Case: SP1F Topology: MOSFET half-bridge + parrallel diodes; NTC thermistor Pulsed drain current: 110A Semiconductor structure: SiC diode/transistor Drain-source voltage: 1.2kV Drain current: 44A On-state resistance: 50mΩ Power dissipation: 245W Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: MOSFET transistor Technology: SiC |
Produkt ist nicht verfügbar |
||
| MSCSM120AM50CT1AG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 1.2kV; 44A; SP1F; Press-in PCB; 245W Case: SP1F Topology: MOSFET half-bridge + parrallel diodes; NTC thermistor Pulsed drain current: 110A Semiconductor structure: SiC diode/transistor Drain-source voltage: 1.2kV Drain current: 44A On-state resistance: 50mΩ Power dissipation: 245W Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: MOSFET transistor Technology: SiC Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||
| MSCSM120DAM11CT3AG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 1.2kV; 202A; SP3F; Press-in PCB Type of module: MOSFET transistor Semiconductor structure: SiC diode/transistor Drain-source voltage: 1.2kV Drain current: 202A Case: SP3F Topology: boost chopper; NTC thermistor Electrical mounting: Press-in PCB On-state resistance: 10.4mΩ Pulsed drain current: 500A Power dissipation: 1067W Technology: SiC Mechanical mounting: screw |
Produkt ist nicht verfügbar |
||
| MSCSM120DAM11CT3AG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 1.2kV; 202A; SP3F; Press-in PCB Type of module: MOSFET transistor Semiconductor structure: SiC diode/transistor Drain-source voltage: 1.2kV Drain current: 202A Case: SP3F Topology: boost chopper; NTC thermistor Electrical mounting: Press-in PCB On-state resistance: 10.4mΩ Pulsed drain current: 500A Power dissipation: 1067W Technology: SiC Mechanical mounting: screw Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||
| MSCSM120HM16CT3AG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 1.2kV; 138A; SP3F; Press-in PCB Case: SP3F Topology: H bridge + parrallel diodes; NTC thermistor Pulsed drain current: 350A Semiconductor structure: SiC diode/transistor Drain-source voltage: 1.2kV Drain current: 138A On-state resistance: 16mΩ Power dissipation: 745W Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: MOSFET transistor Technology: SiC |
Produkt ist nicht verfügbar |
||
| MSCSM120HM16CT3AG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 1.2kV; 138A; SP3F; Press-in PCB Case: SP3F Topology: H bridge + parrallel diodes; NTC thermistor Pulsed drain current: 350A Semiconductor structure: SiC diode/transistor Drain-source voltage: 1.2kV Drain current: 138A On-state resistance: 16mΩ Power dissipation: 745W Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: MOSFET transistor Technology: SiC Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||
| MSCSM120HM31CT3AG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 1.2kV; 71A; SP3F; Press-in PCB; 395W Case: SP3F Topology: H bridge + parrallel diodes; NTC thermistor Pulsed drain current: 180A Semiconductor structure: SiC diode/transistor Drain-source voltage: 1.2kV Drain current: 71A On-state resistance: 31mΩ Power dissipation: 395W Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: MOSFET transistor Technology: SiC |
Produkt ist nicht verfügbar |
| MSCDC300A70AG |
Hersteller: MICROCHIP (MICROSEMI)
Category: Diode modules
Description: Module: diode; double series; 700V; 300A; SP6C; screw; screw; SiC
Type of module: diode
Semiconductor structure: double series
Max. off-state voltage: 700V
Load current: 300A
Case: SP6C
Electrical mounting: screw
Mechanical mounting: screw
Features of semiconductor devices: Schottky
Technology: SiC
Category: Diode modules
Description: Module: diode; double series; 700V; 300A; SP6C; screw; screw; SiC
Type of module: diode
Semiconductor structure: double series
Max. off-state voltage: 700V
Load current: 300A
Case: SP6C
Electrical mounting: screw
Mechanical mounting: screw
Features of semiconductor devices: Schottky
Technology: SiC
Produkt ist nicht verfügbar
| MSCDC300A70AG |
Hersteller: MICROCHIP (MICROSEMI)
Category: Diode modules
Description: Module: diode; double series; 700V; 300A; SP6C; screw; screw; SiC
Type of module: diode
Semiconductor structure: double series
Max. off-state voltage: 700V
Load current: 300A
Case: SP6C
Electrical mounting: screw
Mechanical mounting: screw
Features of semiconductor devices: Schottky
Technology: SiC
Anzahl je Verpackung: 1 Stücke
Category: Diode modules
Description: Module: diode; double series; 700V; 300A; SP6C; screw; screw; SiC
Type of module: diode
Semiconductor structure: double series
Max. off-state voltage: 700V
Load current: 300A
Case: SP6C
Electrical mounting: screw
Mechanical mounting: screw
Features of semiconductor devices: Schottky
Technology: SiC
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| MSCDC450A120AG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Diode modules
Description: Module: diode; double series; 1.2kV; 450A; SP6C; screw; screw; SiC
Mechanical mounting: screw
Electrical mounting: screw
Case: SP6C
Type of module: diode
Features of semiconductor devices: Schottky
Technology: SiC
Max. off-state voltage: 1.2kV
Load current: 450A
Semiconductor structure: double series
Category: Diode modules
Description: Module: diode; double series; 1.2kV; 450A; SP6C; screw; screw; SiC
Mechanical mounting: screw
Electrical mounting: screw
Case: SP6C
Type of module: diode
Features of semiconductor devices: Schottky
Technology: SiC
Max. off-state voltage: 1.2kV
Load current: 450A
Semiconductor structure: double series
Produkt ist nicht verfügbar
| MSCDC450A120AG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Diode modules
Description: Module: diode; double series; 1.2kV; 450A; SP6C; screw; screw; SiC
Mechanical mounting: screw
Electrical mounting: screw
Case: SP6C
Type of module: diode
Features of semiconductor devices: Schottky
Technology: SiC
Max. off-state voltage: 1.2kV
Load current: 450A
Semiconductor structure: double series
Anzahl je Verpackung: 1 Stücke
Category: Diode modules
Description: Module: diode; double series; 1.2kV; 450A; SP6C; screw; screw; SiC
Mechanical mounting: screw
Electrical mounting: screw
Case: SP6C
Type of module: diode
Features of semiconductor devices: Schottky
Technology: SiC
Max. off-state voltage: 1.2kV
Load current: 450A
Semiconductor structure: double series
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| MSCDC450A170AG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Diode modules
Description: Module: diode; double series; 1.7kV; 450A; SP6C; screw; screw; SiC
Type of module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.7kV
Load current: 450A
Case: SP6C
Electrical mounting: screw
Mechanical mounting: screw
Features of semiconductor devices: Schottky
Technology: SiC
Category: Diode modules
Description: Module: diode; double series; 1.7kV; 450A; SP6C; screw; screw; SiC
Type of module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.7kV
Load current: 450A
Case: SP6C
Electrical mounting: screw
Mechanical mounting: screw
Features of semiconductor devices: Schottky
Technology: SiC
Produkt ist nicht verfügbar
| MSCDC450A170AG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Diode modules
Description: Module: diode; double series; 1.7kV; 450A; SP6C; screw; screw; SiC
Type of module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.7kV
Load current: 450A
Case: SP6C
Electrical mounting: screw
Mechanical mounting: screw
Features of semiconductor devices: Schottky
Technology: SiC
Anzahl je Verpackung: 1 Stücke
Category: Diode modules
Description: Module: diode; double series; 1.7kV; 450A; SP6C; screw; screw; SiC
Type of module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.7kV
Load current: 450A
Case: SP6C
Electrical mounting: screw
Mechanical mounting: screw
Features of semiconductor devices: Schottky
Technology: SiC
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| MSCDC450A70AG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Diode modules
Description: Module: diode; double series; 700V; 450A; SP6C; screw; screw; SiC
Type of module: diode
Semiconductor structure: double series
Max. off-state voltage: 700V
Load current: 450A
Case: SP6C
Electrical mounting: screw
Mechanical mounting: screw
Features of semiconductor devices: Schottky
Technology: SiC
Category: Diode modules
Description: Module: diode; double series; 700V; 450A; SP6C; screw; screw; SiC
Type of module: diode
Semiconductor structure: double series
Max. off-state voltage: 700V
Load current: 450A
Case: SP6C
Electrical mounting: screw
Mechanical mounting: screw
Features of semiconductor devices: Schottky
Technology: SiC
Produkt ist nicht verfügbar
| MSCDC450A70AG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Diode modules
Description: Module: diode; double series; 700V; 450A; SP6C; screw; screw; SiC
Type of module: diode
Semiconductor structure: double series
Max. off-state voltage: 700V
Load current: 450A
Case: SP6C
Electrical mounting: screw
Mechanical mounting: screw
Features of semiconductor devices: Schottky
Technology: SiC
Anzahl je Verpackung: 1 Stücke
Category: Diode modules
Description: Module: diode; double series; 700V; 450A; SP6C; screw; screw; SiC
Type of module: diode
Semiconductor structure: double series
Max. off-state voltage: 700V
Load current: 450A
Case: SP6C
Electrical mounting: screw
Mechanical mounting: screw
Features of semiconductor devices: Schottky
Technology: SiC
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| MSCDC50H1201AG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 50A; screw; SP1F
Max. forward voltage: 2.1V
Max. off-state voltage: 1.2kV
Leads: Ø1,3±0,1mm
Kind of package: bulk
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Version: module
Case: SP1F
Features of semiconductor devices: Schottky
Technology: SiC
Load current: 50A
Type of bridge rectifier: single-phase
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 50A; screw; SP1F
Max. forward voltage: 2.1V
Max. off-state voltage: 1.2kV
Leads: Ø1,3±0,1mm
Kind of package: bulk
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Version: module
Case: SP1F
Features of semiconductor devices: Schottky
Technology: SiC
Load current: 50A
Type of bridge rectifier: single-phase
Produkt ist nicht verfügbar
| MSCDC50H1201AG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 50A; screw; SP1F
Max. forward voltage: 2.1V
Max. off-state voltage: 1.2kV
Leads: Ø1,3±0,1mm
Kind of package: bulk
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Version: module
Case: SP1F
Features of semiconductor devices: Schottky
Technology: SiC
Load current: 50A
Type of bridge rectifier: single-phase
Anzahl je Verpackung: 1 Stücke
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 50A; screw; SP1F
Max. forward voltage: 2.1V
Max. off-state voltage: 1.2kV
Leads: Ø1,3±0,1mm
Kind of package: bulk
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Version: module
Case: SP1F
Features of semiconductor devices: Schottky
Technology: SiC
Load current: 50A
Type of bridge rectifier: single-phase
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| MSCDC50H1701AG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 1.7kV; If: 50A; screw; SP1F
Max. off-state voltage: 1.7kV
Load current: 50A
Case: SP1F
Version: module
Max. forward voltage: 2V
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Features of semiconductor devices: Schottky
Kind of package: bulk
Technology: SiC
Leads: Ø1,3±0,1mm
Type of bridge rectifier: single-phase
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 1.7kV; If: 50A; screw; SP1F
Max. off-state voltage: 1.7kV
Load current: 50A
Case: SP1F
Version: module
Max. forward voltage: 2V
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Features of semiconductor devices: Schottky
Kind of package: bulk
Technology: SiC
Leads: Ø1,3±0,1mm
Type of bridge rectifier: single-phase
Produkt ist nicht verfügbar
| MSCDC50H1701AG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 1.7kV; If: 50A; screw; SP1F
Max. off-state voltage: 1.7kV
Load current: 50A
Case: SP1F
Version: module
Max. forward voltage: 2V
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Features of semiconductor devices: Schottky
Kind of package: bulk
Technology: SiC
Leads: Ø1,3±0,1mm
Type of bridge rectifier: single-phase
Anzahl je Verpackung: 1 Stücke
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 1.7kV; If: 50A; screw; SP1F
Max. off-state voltage: 1.7kV
Load current: 50A
Case: SP1F
Version: module
Max. forward voltage: 2V
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Features of semiconductor devices: Schottky
Kind of package: bulk
Technology: SiC
Leads: Ø1,3±0,1mm
Type of bridge rectifier: single-phase
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| MSCDC50H701AG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 700V; If: 50A; Press-in PCB
Max. off-state voltage: 700V
Load current: 50A
Case: SP1F
Version: module
Max. forward voltage: 1.9V
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Features of semiconductor devices: Schottky
Kind of package: bulk
Technology: SiC
Leads: Ø1,3±0,1mm
Type of bridge rectifier: single-phase
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 700V; If: 50A; Press-in PCB
Max. off-state voltage: 700V
Load current: 50A
Case: SP1F
Version: module
Max. forward voltage: 1.9V
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Features of semiconductor devices: Schottky
Kind of package: bulk
Technology: SiC
Leads: Ø1,3±0,1mm
Type of bridge rectifier: single-phase
Produkt ist nicht verfügbar
| MSCDC50H701AG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 700V; If: 50A; Press-in PCB
Max. off-state voltage: 700V
Load current: 50A
Case: SP1F
Version: module
Max. forward voltage: 1.9V
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Features of semiconductor devices: Schottky
Kind of package: bulk
Technology: SiC
Leads: Ø1,3±0,1mm
Type of bridge rectifier: single-phase
Anzahl je Verpackung: 1 Stücke
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 700V; If: 50A; Press-in PCB
Max. off-state voltage: 700V
Load current: 50A
Case: SP1F
Version: module
Max. forward voltage: 1.9V
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Features of semiconductor devices: Schottky
Kind of package: bulk
Technology: SiC
Leads: Ø1,3±0,1mm
Type of bridge rectifier: single-phase
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| MSCDC50X1201AG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.2kV; 50A; Press-in PCB
Max. forward voltage: 2.1V
Max. off-state voltage: 1.2kV
Leads: Ø1,3±0,1mm
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Version: module
Case: SP1F
Features of semiconductor devices: Schottky
Technology: SiC
Load current: 50A
Type of bridge rectifier: three-phase
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.2kV; 50A; Press-in PCB
Max. forward voltage: 2.1V
Max. off-state voltage: 1.2kV
Leads: Ø1,3±0,1mm
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Version: module
Case: SP1F
Features of semiconductor devices: Schottky
Technology: SiC
Load current: 50A
Type of bridge rectifier: three-phase
Produkt ist nicht verfügbar
| MSCDC50X1201AG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.2kV; 50A; Press-in PCB
Max. forward voltage: 2.1V
Max. off-state voltage: 1.2kV
Leads: Ø1,3±0,1mm
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Version: module
Case: SP1F
Features of semiconductor devices: Schottky
Technology: SiC
Load current: 50A
Type of bridge rectifier: three-phase
Anzahl je Verpackung: 1 Stücke
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.2kV; 50A; Press-in PCB
Max. forward voltage: 2.1V
Max. off-state voltage: 1.2kV
Leads: Ø1,3±0,1mm
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Version: module
Case: SP1F
Features of semiconductor devices: Schottky
Technology: SiC
Load current: 50A
Type of bridge rectifier: three-phase
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| MSCDC50X1701AG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.7kV; 50A; Press-in PCB
Max. off-state voltage: 1.7kV
Load current: 50A
Case: SP1F
Version: module
Max. forward voltage: 1.8V
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Features of semiconductor devices: Schottky
Technology: SiC
Leads: Ø1,3±0,1mm
Type of bridge rectifier: three-phase
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.7kV; 50A; Press-in PCB
Max. off-state voltage: 1.7kV
Load current: 50A
Case: SP1F
Version: module
Max. forward voltage: 1.8V
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Features of semiconductor devices: Schottky
Technology: SiC
Leads: Ø1,3±0,1mm
Type of bridge rectifier: three-phase
Produkt ist nicht verfügbar
| MSCDC50X1701AG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.7kV; 50A; Press-in PCB
Max. off-state voltage: 1.7kV
Load current: 50A
Case: SP1F
Version: module
Max. forward voltage: 1.8V
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Features of semiconductor devices: Schottky
Technology: SiC
Leads: Ø1,3±0,1mm
Type of bridge rectifier: three-phase
Anzahl je Verpackung: 1 Stücke
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.7kV; 50A; Press-in PCB
Max. off-state voltage: 1.7kV
Load current: 50A
Case: SP1F
Version: module
Max. forward voltage: 1.8V
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Features of semiconductor devices: Schottky
Technology: SiC
Leads: Ø1,3±0,1mm
Type of bridge rectifier: three-phase
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| MSCDC50X701AG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 700V; 50A; Press-in PCB
Max. off-state voltage: 700V
Load current: 50A
Case: SP1F
Version: module
Max. forward voltage: 1.9V
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Features of semiconductor devices: Schottky
Technology: SiC
Leads: Ø1,3±0,1mm
Type of bridge rectifier: three-phase
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 700V; 50A; Press-in PCB
Max. off-state voltage: 700V
Load current: 50A
Case: SP1F
Version: module
Max. forward voltage: 1.9V
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Features of semiconductor devices: Schottky
Technology: SiC
Leads: Ø1,3±0,1mm
Type of bridge rectifier: three-phase
Produkt ist nicht verfügbar
| MSCDC50X701AG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 700V; 50A; Press-in PCB
Max. off-state voltage: 700V
Load current: 50A
Case: SP1F
Version: module
Max. forward voltage: 1.9V
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Features of semiconductor devices: Schottky
Technology: SiC
Leads: Ø1,3±0,1mm
Type of bridge rectifier: three-phase
Anzahl je Verpackung: 1 Stücke
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 700V; 50A; Press-in PCB
Max. off-state voltage: 700V
Load current: 50A
Case: SP1F
Version: module
Max. forward voltage: 1.9V
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Features of semiconductor devices: Schottky
Technology: SiC
Leads: Ø1,3±0,1mm
Type of bridge rectifier: three-phase
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| MSCDC600A120AG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Diode modules
Description: Module: diode; double series; 1.2kV; 600A; SP6C; screw; screw; SiC
Mechanical mounting: screw
Electrical mounting: screw
Case: SP6C
Type of module: diode
Features of semiconductor devices: Schottky
Technology: SiC
Max. off-state voltage: 1.2kV
Load current: 600A
Semiconductor structure: double series
Category: Diode modules
Description: Module: diode; double series; 1.2kV; 600A; SP6C; screw; screw; SiC
Mechanical mounting: screw
Electrical mounting: screw
Case: SP6C
Type of module: diode
Features of semiconductor devices: Schottky
Technology: SiC
Max. off-state voltage: 1.2kV
Load current: 600A
Semiconductor structure: double series
Produkt ist nicht verfügbar
| MSCDC600A120AG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Diode modules
Description: Module: diode; double series; 1.2kV; 600A; SP6C; screw; screw; SiC
Mechanical mounting: screw
Electrical mounting: screw
Case: SP6C
Type of module: diode
Features of semiconductor devices: Schottky
Technology: SiC
Max. off-state voltage: 1.2kV
Load current: 600A
Semiconductor structure: double series
Anzahl je Verpackung: 1 Stücke
Category: Diode modules
Description: Module: diode; double series; 1.2kV; 600A; SP6C; screw; screw; SiC
Mechanical mounting: screw
Electrical mounting: screw
Case: SP6C
Type of module: diode
Features of semiconductor devices: Schottky
Technology: SiC
Max. off-state voltage: 1.2kV
Load current: 600A
Semiconductor structure: double series
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| MSCDC600A170AG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Diode modules
Description: Module: diode; double series; 1.7kV; 600A; SP6C; screw; screw; SiC
Type of module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.7kV
Load current: 600A
Case: SP6C
Electrical mounting: screw
Mechanical mounting: screw
Features of semiconductor devices: Schottky
Technology: SiC
Category: Diode modules
Description: Module: diode; double series; 1.7kV; 600A; SP6C; screw; screw; SiC
Type of module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.7kV
Load current: 600A
Case: SP6C
Electrical mounting: screw
Mechanical mounting: screw
Features of semiconductor devices: Schottky
Technology: SiC
Produkt ist nicht verfügbar
| MSCDC600A170AG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Diode modules
Description: Module: diode; double series; 1.7kV; 600A; SP6C; screw; screw; SiC
Type of module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.7kV
Load current: 600A
Case: SP6C
Electrical mounting: screw
Mechanical mounting: screw
Features of semiconductor devices: Schottky
Technology: SiC
Anzahl je Verpackung: 1 Stücke
Category: Diode modules
Description: Module: diode; double series; 1.7kV; 600A; SP6C; screw; screw; SiC
Type of module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.7kV
Load current: 600A
Case: SP6C
Electrical mounting: screw
Mechanical mounting: screw
Features of semiconductor devices: Schottky
Technology: SiC
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| MSCDC600A70AG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Diode modules
Description: Module: diode; double series; 700V; 600A; SP6C; screw; screw; SiC
Type of module: diode
Semiconductor structure: double series
Max. off-state voltage: 700V
Load current: 600A
Case: SP6C
Electrical mounting: screw
Mechanical mounting: screw
Features of semiconductor devices: Schottky
Technology: SiC
Category: Diode modules
Description: Module: diode; double series; 700V; 600A; SP6C; screw; screw; SiC
Type of module: diode
Semiconductor structure: double series
Max. off-state voltage: 700V
Load current: 600A
Case: SP6C
Electrical mounting: screw
Mechanical mounting: screw
Features of semiconductor devices: Schottky
Technology: SiC
Produkt ist nicht verfügbar
| MSCDC600A70AG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Diode modules
Description: Module: diode; double series; 700V; 600A; SP6C; screw; screw; SiC
Type of module: diode
Semiconductor structure: double series
Max. off-state voltage: 700V
Load current: 600A
Case: SP6C
Electrical mounting: screw
Mechanical mounting: screw
Features of semiconductor devices: Schottky
Technology: SiC
Anzahl je Verpackung: 1 Stücke
Category: Diode modules
Description: Module: diode; double series; 700V; 600A; SP6C; screw; screw; SiC
Type of module: diode
Semiconductor structure: double series
Max. off-state voltage: 700V
Load current: 600A
Case: SP6C
Electrical mounting: screw
Mechanical mounting: screw
Features of semiconductor devices: Schottky
Technology: SiC
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| MSCGL40X120T3AG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Topology: IGBT three-phase bridge; NTC thermistor
Technology: Trench
Type of module: IGBT
Max. off-state voltage: 1.2kV
Collector current: 40A
Case: SP3F
Semiconductor structure: transistor/transistor
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Topology: IGBT three-phase bridge; NTC thermistor
Technology: Trench
Type of module: IGBT
Max. off-state voltage: 1.2kV
Collector current: 40A
Case: SP3F
Semiconductor structure: transistor/transistor
Produkt ist nicht verfügbar
| MSCGL40X120T3AG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Topology: IGBT three-phase bridge; NTC thermistor
Technology: Trench
Type of module: IGBT
Max. off-state voltage: 1.2kV
Collector current: 40A
Case: SP3F
Semiconductor structure: transistor/transistor
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Topology: IGBT three-phase bridge; NTC thermistor
Technology: Trench
Type of module: IGBT
Max. off-state voltage: 1.2kV
Collector current: 40A
Case: SP3F
Semiconductor structure: transistor/transistor
Produkt ist nicht verfügbar
| MSCGTQ100HD65C1AG |
|
Hersteller: MICROCHIP (MICROSEMI)
MSCGTQ100HD65C1AG IGBT modules
MSCGTQ100HD65C1AG IGBT modules
Produkt ist nicht verfügbar
| MSCM20AM058G |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 200V; 250A; LP8; SiC; screw
Type of module: MOSFET transistor
Technology: SiC
Topology: MOSFET half-bridge
Case: LP8
Semiconductor structure: transistor/transistor
Drain-source voltage: 200V
Drain current: 250A
On-state resistance: 5mΩ
Mechanical mounting: screw
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 200V; 250A; LP8; SiC; screw
Type of module: MOSFET transistor
Technology: SiC
Topology: MOSFET half-bridge
Case: LP8
Semiconductor structure: transistor/transistor
Drain-source voltage: 200V
Drain current: 250A
On-state resistance: 5mΩ
Mechanical mounting: screw
Produkt ist nicht verfügbar
| MSCM20AM058G |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 200V; 250A; LP8; SiC; screw
Type of module: MOSFET transistor
Technology: SiC
Topology: MOSFET half-bridge
Case: LP8
Semiconductor structure: transistor/transistor
Drain-source voltage: 200V
Drain current: 250A
On-state resistance: 5mΩ
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 200V; 250A; LP8; SiC; screw
Type of module: MOSFET transistor
Technology: SiC
Topology: MOSFET half-bridge
Case: LP8
Semiconductor structure: transistor/transistor
Drain-source voltage: 200V
Drain current: 250A
On-state resistance: 5mΩ
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| MSCM20XM10T3XG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 200V; 84A; SP3X; SiC; screw
Type of module: MOSFET transistor
Technology: SiC
Topology: MOSFET three-phase bridge
Case: SP3X
Semiconductor structure: transistor/transistor
Drain-source voltage: 200V
Drain current: 84A
On-state resistance: 10mΩ
Mechanical mounting: screw
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 200V; 84A; SP3X; SiC; screw
Type of module: MOSFET transistor
Technology: SiC
Topology: MOSFET three-phase bridge
Case: SP3X
Semiconductor structure: transistor/transistor
Drain-source voltage: 200V
Drain current: 84A
On-state resistance: 10mΩ
Mechanical mounting: screw
Produkt ist nicht verfügbar
| MSCM20XM10T3XG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 200V; 84A; SP3X; SiC; screw
Type of module: MOSFET transistor
Technology: SiC
Topology: MOSFET three-phase bridge
Case: SP3X
Semiconductor structure: transistor/transistor
Drain-source voltage: 200V
Drain current: 84A
On-state resistance: 10mΩ
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 200V; 84A; SP3X; SiC; screw
Type of module: MOSFET transistor
Technology: SiC
Topology: MOSFET three-phase bridge
Case: SP3X
Semiconductor structure: transistor/transistor
Drain-source voltage: 200V
Drain current: 84A
On-state resistance: 10mΩ
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| MSCM20XM16F4G |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 200V; 77A; SP4; SiC; screw
Type of module: MOSFET transistor
Technology: SiC
Topology: MOSFET three-phase bridge
Case: SP4
Semiconductor structure: transistor/transistor
Drain-source voltage: 200V
Drain current: 77A
On-state resistance: 16mΩ
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 200V; 77A; SP4; SiC; screw
Type of module: MOSFET transistor
Technology: SiC
Topology: MOSFET three-phase bridge
Case: SP4
Semiconductor structure: transistor/transistor
Drain-source voltage: 200V
Drain current: 77A
On-state resistance: 16mΩ
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
| MSCM20XM16F4G |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 200V; 77A; SP4; SiC; screw
Type of module: MOSFET transistor
Technology: SiC
Topology: MOSFET three-phase bridge
Case: SP4
Semiconductor structure: transistor/transistor
Drain-source voltage: 200V
Drain current: 77A
On-state resistance: 16mΩ
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 200V; 77A; SP4; SiC; screw
Type of module: MOSFET transistor
Technology: SiC
Topology: MOSFET three-phase bridge
Case: SP4
Semiconductor structure: transistor/transistor
Drain-source voltage: 200V
Drain current: 77A
On-state resistance: 16mΩ
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| MSCMC90AM12C3AG |
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/tiristor/transistor; 900V; SP3F; Press-in PCB
Type of module: MOSFET transistor
Semiconductor structure: SiC diode/tiristor/transistor
Drain-source voltage: 900V
Case: SP3F
Topology: Vienna Rectifier
Electrical mounting: Press-in PCB
Technology: SiC
Mechanical mounting: screw
Category: Transistor modules MOSFET
Description: Module; SiC diode/tiristor/transistor; 900V; SP3F; Press-in PCB
Type of module: MOSFET transistor
Semiconductor structure: SiC diode/tiristor/transistor
Drain-source voltage: 900V
Case: SP3F
Topology: Vienna Rectifier
Electrical mounting: Press-in PCB
Technology: SiC
Mechanical mounting: screw
Produkt ist nicht verfügbar
| MSCMC90AM12C3AG |
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/tiristor/transistor; 900V; SP3F; Press-in PCB
Type of module: MOSFET transistor
Semiconductor structure: SiC diode/tiristor/transistor
Drain-source voltage: 900V
Case: SP3F
Topology: Vienna Rectifier
Electrical mounting: Press-in PCB
Technology: SiC
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; SiC diode/tiristor/transistor; 900V; SP3F; Press-in PCB
Type of module: MOSFET transistor
Semiconductor structure: SiC diode/tiristor/transistor
Drain-source voltage: 900V
Case: SP3F
Topology: Vienna Rectifier
Electrical mounting: Press-in PCB
Technology: SiC
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| MSCSM120AM027CD3AG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 584A; D3; Idm: 1400A; 2.97kW
Case: D3
Topology: MOSFET half-bridge + parrallel diodes
Pulsed drain current: 1400A
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 584A
On-state resistance: 3.5mΩ
Power dissipation: 2.97kW
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 584A; D3; Idm: 1400A; 2.97kW
Case: D3
Topology: MOSFET half-bridge + parrallel diodes
Pulsed drain current: 1400A
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 584A
On-state resistance: 3.5mΩ
Power dissipation: 2.97kW
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Produkt ist nicht verfügbar
| MSCSM120AM027CD3AG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 584A; D3; Idm: 1400A; 2.97kW
Case: D3
Topology: MOSFET half-bridge + parrallel diodes
Pulsed drain current: 1400A
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 584A
On-state resistance: 3.5mΩ
Power dissipation: 2.97kW
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 584A; D3; Idm: 1400A; 2.97kW
Case: D3
Topology: MOSFET half-bridge + parrallel diodes
Pulsed drain current: 1400A
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 584A
On-state resistance: 3.5mΩ
Power dissipation: 2.97kW
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| MSCSM120AM027CT6AG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 584A; SP6C; Idm: 1400A; 2.97kW
Case: SP6C
Topology: MOSFET half-bridge + parrallel diodes; NTC thermistor
Pulsed drain current: 1400A
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 584A
On-state resistance: 3.5mΩ
Power dissipation: 2.97kW
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 584A; SP6C; Idm: 1400A; 2.97kW
Case: SP6C
Topology: MOSFET half-bridge + parrallel diodes; NTC thermistor
Pulsed drain current: 1400A
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 584A
On-state resistance: 3.5mΩ
Power dissipation: 2.97kW
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Produkt ist nicht verfügbar
| MSCSM120AM027CT6AG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 584A; SP6C; Idm: 1400A; 2.97kW
Case: SP6C
Topology: MOSFET half-bridge + parrallel diodes; NTC thermistor
Pulsed drain current: 1400A
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 584A
On-state resistance: 3.5mΩ
Power dissipation: 2.97kW
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 584A; SP6C; Idm: 1400A; 2.97kW
Case: SP6C
Topology: MOSFET half-bridge + parrallel diodes; NTC thermistor
Pulsed drain current: 1400A
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 584A
On-state resistance: 3.5mΩ
Power dissipation: 2.97kW
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| MSCSM120AM042CD3AG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 395A; D3; Idm: 990A; 2031W; SiC
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Technology: SiC
Topology: MOSFET half-bridge + parrallel diodes
Pulsed drain current: 990A
Case: D3
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 395A
On-state resistance: 5.2mΩ
Power dissipation: 2031W
Type of module: MOSFET transistor
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 395A; D3; Idm: 990A; 2031W; SiC
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Technology: SiC
Topology: MOSFET half-bridge + parrallel diodes
Pulsed drain current: 990A
Case: D3
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 395A
On-state resistance: 5.2mΩ
Power dissipation: 2031W
Type of module: MOSFET transistor
Produkt ist nicht verfügbar
| MSCSM120AM042CD3AG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 395A; D3; Idm: 990A; 2031W; SiC
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Technology: SiC
Topology: MOSFET half-bridge + parrallel diodes
Pulsed drain current: 990A
Case: D3
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 395A
On-state resistance: 5.2mΩ
Power dissipation: 2031W
Type of module: MOSFET transistor
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 395A; D3; Idm: 990A; 2031W; SiC
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Technology: SiC
Topology: MOSFET half-bridge + parrallel diodes
Pulsed drain current: 990A
Case: D3
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 395A
On-state resistance: 5.2mΩ
Power dissipation: 2031W
Type of module: MOSFET transistor
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| MSCSM120AM042CT6AG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 395A; SP6C; Idm: 990A; 2031W
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Technology: SiC
Topology: MOSFET half-bridge + parrallel diodes; NTC thermistor
Pulsed drain current: 990A
Case: SP6C
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 395A
On-state resistance: 5.2mΩ
Power dissipation: 2031W
Type of module: MOSFET transistor
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 395A; SP6C; Idm: 990A; 2031W
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Technology: SiC
Topology: MOSFET half-bridge + parrallel diodes; NTC thermistor
Pulsed drain current: 990A
Case: SP6C
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 395A
On-state resistance: 5.2mΩ
Power dissipation: 2031W
Type of module: MOSFET transistor
Produkt ist nicht verfügbar
| MSCSM120AM042CT6AG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 395A; SP6C; Idm: 990A; 2031W
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Technology: SiC
Topology: MOSFET half-bridge + parrallel diodes; NTC thermistor
Pulsed drain current: 990A
Case: SP6C
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 395A
On-state resistance: 5.2mΩ
Power dissipation: 2031W
Type of module: MOSFET transistor
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 395A; SP6C; Idm: 990A; 2031W
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Technology: SiC
Topology: MOSFET half-bridge + parrallel diodes; NTC thermistor
Pulsed drain current: 990A
Case: SP6C
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 395A
On-state resistance: 5.2mΩ
Power dissipation: 2031W
Type of module: MOSFET transistor
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| MSCSM120AM08CT3AG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 268A; SP3F; Press-in PCB
Case: SP3F
Topology: MOSFET half-bridge + parrallel diodes; NTC thermistor
Pulsed drain current: 675A
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 268A
On-state resistance: 7.8mΩ
Power dissipation: 1409W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 268A; SP3F; Press-in PCB
Case: SP3F
Topology: MOSFET half-bridge + parrallel diodes; NTC thermistor
Pulsed drain current: 675A
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 268A
On-state resistance: 7.8mΩ
Power dissipation: 1409W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Produkt ist nicht verfügbar
| MSCSM120AM08CT3AG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 268A; SP3F; Press-in PCB
Case: SP3F
Topology: MOSFET half-bridge + parrallel diodes; NTC thermistor
Pulsed drain current: 675A
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 268A
On-state resistance: 7.8mΩ
Power dissipation: 1409W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 268A; SP3F; Press-in PCB
Case: SP3F
Topology: MOSFET half-bridge + parrallel diodes; NTC thermistor
Pulsed drain current: 675A
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 268A
On-state resistance: 7.8mΩ
Power dissipation: 1409W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| MSCSM120AM11CT3AG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 202A; SP3F; Press-in PCB
Case: SP3F
Topology: MOSFET half-bridge + parrallel diodes; NTC thermistor
Pulsed drain current: 500A
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 202A
On-state resistance: 10.4mΩ
Power dissipation: 1067W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 202A; SP3F; Press-in PCB
Case: SP3F
Topology: MOSFET half-bridge + parrallel diodes; NTC thermistor
Pulsed drain current: 500A
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 202A
On-state resistance: 10.4mΩ
Power dissipation: 1067W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Produkt ist nicht verfügbar
| MSCSM120AM11CT3AG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 202A; SP3F; Press-in PCB
Case: SP3F
Topology: MOSFET half-bridge + parrallel diodes; NTC thermistor
Pulsed drain current: 500A
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 202A
On-state resistance: 10.4mΩ
Power dissipation: 1067W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 202A; SP3F; Press-in PCB
Case: SP3F
Topology: MOSFET half-bridge + parrallel diodes; NTC thermistor
Pulsed drain current: 500A
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 202A
On-state resistance: 10.4mΩ
Power dissipation: 1067W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| MSCSM120AM16CT1AG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 138A; SP1F; Press-in PCB
Power dissipation: 745W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Topology: MOSFET half-bridge + parrallel diodes; NTC thermistor
Pulsed drain current: 350A
Case: SP1F
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 138A
On-state resistance: 16mΩ
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 138A; SP1F; Press-in PCB
Power dissipation: 745W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Topology: MOSFET half-bridge + parrallel diodes; NTC thermistor
Pulsed drain current: 350A
Case: SP1F
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 138A
On-state resistance: 16mΩ
Produkt ist nicht verfügbar
| MSCSM120AM16CT1AG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 138A; SP1F; Press-in PCB
Power dissipation: 745W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Topology: MOSFET half-bridge + parrallel diodes; NTC thermistor
Pulsed drain current: 350A
Case: SP1F
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 138A
On-state resistance: 16mΩ
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 138A; SP1F; Press-in PCB
Power dissipation: 745W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Topology: MOSFET half-bridge + parrallel diodes; NTC thermistor
Pulsed drain current: 350A
Case: SP1F
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 138A
On-state resistance: 16mΩ
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| MSCSM120AM31CT1AG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 71A; SP1F; Press-in PCB; 395W
Case: SP1F
Topology: MOSFET half-bridge + parrallel diodes; NTC thermistor
Pulsed drain current: 180A
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 71A
On-state resistance: 31mΩ
Power dissipation: 395W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 71A; SP1F; Press-in PCB; 395W
Case: SP1F
Topology: MOSFET half-bridge + parrallel diodes; NTC thermistor
Pulsed drain current: 180A
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 71A
On-state resistance: 31mΩ
Power dissipation: 395W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Produkt ist nicht verfügbar
| MSCSM120AM31CT1AG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 71A; SP1F; Press-in PCB; 395W
Case: SP1F
Topology: MOSFET half-bridge + parrallel diodes; NTC thermistor
Pulsed drain current: 180A
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 71A
On-state resistance: 31mΩ
Power dissipation: 395W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 71A; SP1F; Press-in PCB; 395W
Case: SP1F
Topology: MOSFET half-bridge + parrallel diodes; NTC thermistor
Pulsed drain current: 180A
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 71A
On-state resistance: 31mΩ
Power dissipation: 395W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| MSCSM120AM50CT1AG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 44A; SP1F; Press-in PCB; 245W
Case: SP1F
Topology: MOSFET half-bridge + parrallel diodes; NTC thermistor
Pulsed drain current: 110A
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 44A
On-state resistance: 50mΩ
Power dissipation: 245W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 44A; SP1F; Press-in PCB; 245W
Case: SP1F
Topology: MOSFET half-bridge + parrallel diodes; NTC thermistor
Pulsed drain current: 110A
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 44A
On-state resistance: 50mΩ
Power dissipation: 245W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Produkt ist nicht verfügbar
| MSCSM120AM50CT1AG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 44A; SP1F; Press-in PCB; 245W
Case: SP1F
Topology: MOSFET half-bridge + parrallel diodes; NTC thermistor
Pulsed drain current: 110A
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 44A
On-state resistance: 50mΩ
Power dissipation: 245W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 44A; SP1F; Press-in PCB; 245W
Case: SP1F
Topology: MOSFET half-bridge + parrallel diodes; NTC thermistor
Pulsed drain current: 110A
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 44A
On-state resistance: 50mΩ
Power dissipation: 245W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| MSCSM120DAM11CT3AG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 202A; SP3F; Press-in PCB
Type of module: MOSFET transistor
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 202A
Case: SP3F
Topology: boost chopper; NTC thermistor
Electrical mounting: Press-in PCB
On-state resistance: 10.4mΩ
Pulsed drain current: 500A
Power dissipation: 1067W
Technology: SiC
Mechanical mounting: screw
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 202A; SP3F; Press-in PCB
Type of module: MOSFET transistor
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 202A
Case: SP3F
Topology: boost chopper; NTC thermistor
Electrical mounting: Press-in PCB
On-state resistance: 10.4mΩ
Pulsed drain current: 500A
Power dissipation: 1067W
Technology: SiC
Mechanical mounting: screw
Produkt ist nicht verfügbar
| MSCSM120DAM11CT3AG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 202A; SP3F; Press-in PCB
Type of module: MOSFET transistor
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 202A
Case: SP3F
Topology: boost chopper; NTC thermistor
Electrical mounting: Press-in PCB
On-state resistance: 10.4mΩ
Pulsed drain current: 500A
Power dissipation: 1067W
Technology: SiC
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 202A; SP3F; Press-in PCB
Type of module: MOSFET transistor
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 202A
Case: SP3F
Topology: boost chopper; NTC thermistor
Electrical mounting: Press-in PCB
On-state resistance: 10.4mΩ
Pulsed drain current: 500A
Power dissipation: 1067W
Technology: SiC
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| MSCSM120HM16CT3AG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 138A; SP3F; Press-in PCB
Case: SP3F
Topology: H bridge + parrallel diodes; NTC thermistor
Pulsed drain current: 350A
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 138A
On-state resistance: 16mΩ
Power dissipation: 745W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 138A; SP3F; Press-in PCB
Case: SP3F
Topology: H bridge + parrallel diodes; NTC thermistor
Pulsed drain current: 350A
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 138A
On-state resistance: 16mΩ
Power dissipation: 745W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Produkt ist nicht verfügbar
| MSCSM120HM16CT3AG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 138A; SP3F; Press-in PCB
Case: SP3F
Topology: H bridge + parrallel diodes; NTC thermistor
Pulsed drain current: 350A
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 138A
On-state resistance: 16mΩ
Power dissipation: 745W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 138A; SP3F; Press-in PCB
Case: SP3F
Topology: H bridge + parrallel diodes; NTC thermistor
Pulsed drain current: 350A
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 138A
On-state resistance: 16mΩ
Power dissipation: 745W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| MSCSM120HM31CT3AG |
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 71A; SP3F; Press-in PCB; 395W
Case: SP3F
Topology: H bridge + parrallel diodes; NTC thermistor
Pulsed drain current: 180A
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 71A
On-state resistance: 31mΩ
Power dissipation: 395W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 71A; SP3F; Press-in PCB; 395W
Case: SP3F
Topology: H bridge + parrallel diodes; NTC thermistor
Pulsed drain current: 180A
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 71A
On-state resistance: 31mΩ
Power dissipation: 395W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Produkt ist nicht verfügbar