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M2S010-TQG144I MICROCHIP (MICROSEMI) 132042-ds0128-igloo2-and-smartfusion2-datasheet Category: Programmable circuits
Description: IC: FPGA; SMD; TQFP144; I/O: 84; 1.2VDC; 166MHz; RAM: 400kB
Mounting: SMD
Case: TQFP144
Memory capacity: 256kB
RAM memory capacity: 400kB
Frequency: 166MHz
Supply voltage: 1.2V DC
Type of integrated circuit: FPGA
Number of inputs/outputs: 84
Produkt ist nicht verfügbar
MASMCJ6.0CAE3 MASMCJ6.0CAE3 MICROCHIP (MICROSEMI) MxSMCx6.0CA.pdf Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 6.67V; 145.6A; bidirectional; ±5%; DO214AB
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 6V
Breakdown voltage: 6.67V
Max. forward impulse current: 145.6A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AB
Mounting: SMD
Leakage current: 1mA
auf Bestellung 12 Stücke:
Lieferzeit 14-21 Tag (e)
10+7.65 EUR
11+ 6.51 EUR
Mindestbestellmenge: 10
MASMCJ6.0CAE3 MASMCJ6.0CAE3 MICROCHIP (MICROSEMI) MxSMCx6.0CA.pdf Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 6.67V; 145.6A; bidirectional; ±5%; DO214AB
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 6V
Breakdown voltage: 6.67V
Max. forward impulse current: 145.6A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AB
Mounting: SMD
Leakage current: 1mA
Anzahl je Verpackung: 1 Stücke
auf Bestellung 12 Stücke:
Lieferzeit 7-14 Tag (e)
10+7.65 EUR
11+ 6.51 EUR
Mindestbestellmenge: 10
MASMLG10CA MASMLG10CA MICROCHIP (MICROSEMI) 10563-msml-pdf Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 3kW; 11.7V; 176.4A; bidirectional; ±5%; DO215AB
Mounting: SMD
Case: DO215AB
Kind of package: reel; tape
Breakdown voltage: 11.7V
Leakage current: 5µA
Type of diode: TVS
Peak pulse power dissipation: 3kW
Tolerance: ±5%
Max. off-state voltage: 10V
Semiconductor structure: bidirectional
Max. forward impulse current: 176.4A
Produkt ist nicht verfügbar
MASMLG10CA MASMLG10CA MICROCHIP (MICROSEMI) 10563-msml-pdf Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 3kW; 11.7V; 176.4A; bidirectional; ±5%; DO215AB
Mounting: SMD
Case: DO215AB
Kind of package: reel; tape
Breakdown voltage: 11.7V
Leakage current: 5µA
Type of diode: TVS
Peak pulse power dissipation: 3kW
Tolerance: ±5%
Max. off-state voltage: 10V
Semiconductor structure: bidirectional
Max. forward impulse current: 176.4A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
MASMLG5.0Ae3 MASMLG5.0Ae3 MICROCHIP (MICROSEMI) MxSMLx5.0A.pdf Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 3kW; 6.4V; 326A; unidirectional; ±5%; DO215AB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4V
Max. forward impulse current: 326A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO215AB
Mounting: SMD
Leakage current: 1mA
Kind of package: reel; tape
auf Bestellung 4 Stücke:
Lieferzeit 14-21 Tag (e)
4+17.88 EUR
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MASMLG5.0Ae3 MASMLG5.0Ae3 MICROCHIP (MICROSEMI) MxSMLx5.0A.pdf Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 3kW; 6.4V; 326A; unidirectional; ±5%; DO215AB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4V
Max. forward impulse current: 326A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO215AB
Mounting: SMD
Leakage current: 1mA
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
auf Bestellung 4 Stücke:
Lieferzeit 7-14 Tag (e)
4+17.88 EUR
6+ 11.91 EUR
10+ 7.97 EUR
Mindestbestellmenge: 4
MASMLJ16Ae3 MASMLJ16Ae3 MICROCHIP (MICROSEMI) MxSMLx5.0A.pdf Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 3kW; 17.8V; 115.4A; unidirectional; ±5%; DO214AB
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 16V
Breakdown voltage: 17.8V
Max. forward impulse current: 115.4A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO214AB
Mounting: SMD
Leakage current: 2µA
auf Bestellung 10 Stücke:
Lieferzeit 14-21 Tag (e)
8+9.02 EUR
9+ 7.98 EUR
10+ 7.68 EUR
Mindestbestellmenge: 8
MASMLJ16Ae3 MASMLJ16Ae3 MICROCHIP (MICROSEMI) MxSMLx5.0A.pdf Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 3kW; 17.8V; 115.4A; unidirectional; ±5%; DO214AB
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 16V
Breakdown voltage: 17.8V
Max. forward impulse current: 115.4A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO214AB
Mounting: SMD
Leakage current: 2µA
Anzahl je Verpackung: 1 Stücke
auf Bestellung 10 Stücke:
Lieferzeit 7-14 Tag (e)
8+9.02 EUR
9+ 7.98 EUR
10+ 7.68 EUR
Mindestbestellmenge: 8
MPLAD15KP18AE3 MPLAD15KP18AE3 MICROCHIP (MICROSEMI) plad15kp.pdf Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 15kW; 20÷22.1V; 516A; unidirectional; PLAD
Type of diode: TVS
Peak pulse power dissipation: 15kW
Max. off-state voltage: 18V
Breakdown voltage: 20...22.1V
Max. forward impulse current: 516A
Semiconductor structure: unidirectional
Case: PLAD
Mounting: SMD
Leakage current: 10µA
Produkt ist nicht verfügbar
MPLAD15KP18AE3 MPLAD15KP18AE3 MICROCHIP (MICROSEMI) plad15kp.pdf Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 15kW; 20÷22.1V; 516A; unidirectional; PLAD
Type of diode: TVS
Peak pulse power dissipation: 15kW
Max. off-state voltage: 18V
Breakdown voltage: 20...22.1V
Max. forward impulse current: 516A
Semiconductor structure: unidirectional
Case: PLAD
Mounting: SMD
Leakage current: 10µA
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
MPLAD15KP51CAE3 MPLAD15KP51CAE3 MICROCHIP (MICROSEMI) plad15kp.pdf Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 15kW; 56.7÷62.7V; 183A; bidirectional; PLAD
Type of diode: TVS
Peak pulse power dissipation: 15kW
Max. off-state voltage: 51V
Breakdown voltage: 56.7...62.7V
Max. forward impulse current: 183A
Semiconductor structure: bidirectional
Case: PLAD
Mounting: SMD
Leakage current: 10µA
Produkt ist nicht verfügbar
MPLAD15KP51CAE3 MPLAD15KP51CAE3 MICROCHIP (MICROSEMI) plad15kp.pdf Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 15kW; 56.7÷62.7V; 183A; bidirectional; PLAD
Type of diode: TVS
Peak pulse power dissipation: 15kW
Max. off-state voltage: 51V
Breakdown voltage: 56.7...62.7V
Max. forward impulse current: 183A
Semiconductor structure: bidirectional
Case: PLAD
Mounting: SMD
Leakage current: 10µA
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
MPLAD30KP260CA MICROCHIP (MICROSEMI) MPLAD30KP.pdf Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 30kW; 289÷320V; 71A; bidirectional; PLAD
Breakdown voltage: 289...320V
Leakage current: 10µA
Type of diode: TVS
Peak pulse power dissipation: 30kW
Mounting: SMD
Case: PLAD
Max. off-state voltage: 260V
Semiconductor structure: bidirectional
Max. forward impulse current: 71A
Produkt ist nicht verfügbar
MPLAD30KP260CA MICROCHIP (MICROSEMI) MPLAD30KP.pdf Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 30kW; 289÷320V; 71A; bidirectional; PLAD
Breakdown voltage: 289...320V
Leakage current: 10µA
Type of diode: TVS
Peak pulse power dissipation: 30kW
Mounting: SMD
Case: PLAD
Max. off-state voltage: 260V
Semiconductor structure: bidirectional
Max. forward impulse current: 71A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
MPLAD30KP30CAE3 MICROCHIP (MICROSEMI) 9523-mplad30kp MPLAD30KP30CAE3 Bidirectional SMD transil diodes
Produkt ist nicht verfügbar
MPLAD30KP78AE3 MICROCHIP (MICROSEMI) 9523-mplad30kp-datasheet MPLAD30KP78AE3 Unidirectional SMD transil diodes
auf Bestellung 2 Stücke:
Lieferzeit 7-14 Tag (e)
2+35.75 EUR
Mindestbestellmenge: 2
MPLAD30KP78CAE3 MICROCHIP (MICROSEMI) 9523-mplad30kp MPLAD30KP78CAE3 Bidirectional SMD transil diodes
Produkt ist nicht verfügbar
MPLAD6.5KP10CAE3 MICROCHIP (MICROSEMI) mplad6.5k.pdf Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 6.5kW; 11.1÷12.3V; 383A; bidirectional; PLAD
Type of diode: TVS
Peak pulse power dissipation: 6.5kW
Max. off-state voltage: 10V
Breakdown voltage: 11.1...12.3V
Max. forward impulse current: 383A
Semiconductor structure: bidirectional
Case: PLAD
Mounting: SMD
Leakage current: 15µA
Produkt ist nicht verfügbar
MPLAD6.5KP10CAE3 MICROCHIP (MICROSEMI) mplad6.5k.pdf Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 6.5kW; 11.1÷12.3V; 383A; bidirectional; PLAD
Type of diode: TVS
Peak pulse power dissipation: 6.5kW
Max. off-state voltage: 10V
Breakdown voltage: 11.1...12.3V
Max. forward impulse current: 383A
Semiconductor structure: bidirectional
Case: PLAD
Mounting: SMD
Leakage current: 15µA
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
MPLAD6.5KP11CA MICROCHIP (MICROSEMI) mplad6.5k.pdf Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 6.5kW; 12.2÷13.5V; 358A; bidirectional; PLAD
Mounting: SMD
Case: PLAD
Type of diode: TVS
Breakdown voltage: 12.2...13.5V
Peak pulse power dissipation: 6.5kW
Leakage current: 10µA
Max. forward impulse current: 358A
Semiconductor structure: bidirectional
Max. off-state voltage: 11V
Produkt ist nicht verfügbar
MPLAD6.5KP11CA MICROCHIP (MICROSEMI) mplad6.5k.pdf Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 6.5kW; 12.2÷13.5V; 358A; bidirectional; PLAD
Mounting: SMD
Case: PLAD
Type of diode: TVS
Breakdown voltage: 12.2...13.5V
Peak pulse power dissipation: 6.5kW
Leakage current: 10µA
Max. forward impulse current: 358A
Semiconductor structure: bidirectional
Max. off-state voltage: 11V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
MSC010SDA070B MSC010SDA070B MICROCHIP (MICROSEMI) MSC010SDA070B.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 700V; 10A; 36W; TO247-2
Technology: SiC
Power dissipation: 36W
Case: TO247-2
Mounting: THT
Semiconductor structure: single diode
Max. off-state voltage: 700V
Type of diode: Schottky rectifying
Leakage current: 50µA
Max. forward impulse current: 58A
Load current: 10A
Max. forward voltage: 1.9V
auf Bestellung 150 Stücke:
Lieferzeit 14-21 Tag (e)
120+3.69 EUR
Mindestbestellmenge: 120
MSC010SDA070B MSC010SDA070B MICROCHIP (MICROSEMI) MSC010SDA070B.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 700V; 10A; 36W; TO247-2
Technology: SiC
Power dissipation: 36W
Case: TO247-2
Mounting: THT
Semiconductor structure: single diode
Max. off-state voltage: 700V
Type of diode: Schottky rectifying
Leakage current: 50µA
Max. forward impulse current: 58A
Load current: 10A
Max. forward voltage: 1.9V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 150 Stücke:
Lieferzeit 7-14 Tag (e)
120+3.69 EUR
Mindestbestellmenge: 120
MSC010SDA070K MSC010SDA070K MICROCHIP (MICROSEMI) MSC010SDA070K.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 700V; 10A; 38W; TO220-2
Technology: SiC
Power dissipation: 38W
Case: TO220-2
Mounting: THT
Semiconductor structure: single diode
Max. off-state voltage: 700V
Heatsink thickness: 1.14...1.4mm
Type of diode: Schottky rectifying
Leakage current: 50µA
Max. forward impulse current: 58A
Load current: 10A
Max. forward voltage: 2.1V
auf Bestellung 14 Stücke:
Lieferzeit 14-21 Tag (e)
13+5.55 EUR
14+ 5.46 EUR
Mindestbestellmenge: 13
MSC010SDA070K MSC010SDA070K MICROCHIP (MICROSEMI) MSC010SDA070K.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 700V; 10A; 38W; TO220-2
Technology: SiC
Power dissipation: 38W
Case: TO220-2
Mounting: THT
Semiconductor structure: single diode
Max. off-state voltage: 700V
Heatsink thickness: 1.14...1.4mm
Type of diode: Schottky rectifying
Leakage current: 50µA
Max. forward impulse current: 58A
Load current: 10A
Max. forward voltage: 2.1V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 14 Stücke:
Lieferzeit 7-14 Tag (e)
13+5.55 EUR
14+ 5.46 EUR
Mindestbestellmenge: 13
MSC010SDA120B MSC010SDA120B MICROCHIP (MICROSEMI) MSC010SDA120B.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; 50W; TO247-2
Technology: SiC
Power dissipation: 50W
Case: TO247-2
Mounting: THT
Semiconductor structure: single diode
Max. off-state voltage: 1.2kV
Type of diode: Schottky rectifying
Leakage current: 50µA
Max. forward impulse current: 75A
Load current: 10A
Max. forward voltage: 2.1V
Produkt ist nicht verfügbar
MSC010SDA120B MSC010SDA120B MICROCHIP (MICROSEMI) MSC010SDA120B.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; 50W; TO247-2
Technology: SiC
Power dissipation: 50W
Case: TO247-2
Mounting: THT
Semiconductor structure: single diode
Max. off-state voltage: 1.2kV
Type of diode: Schottky rectifying
Leakage current: 50µA
Max. forward impulse current: 75A
Load current: 10A
Max. forward voltage: 2.1V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
MSC010SDA120K MSC010SDA120K MICROCHIP (MICROSEMI) MSC010SDA120K.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; 59W; TO220-2
Technology: SiC
Power dissipation: 59W
Case: TO220-2
Mounting: THT
Semiconductor structure: single diode
Max. off-state voltage: 1.2kV
Heatsink thickness: 1.14...1.4mm
Type of diode: Schottky rectifying
Leakage current: 50µA
Max. forward impulse current: 75A
Load current: 10A
Max. forward voltage: 2.1V
Produkt ist nicht verfügbar
MSC010SDA120K MSC010SDA120K MICROCHIP (MICROSEMI) MSC010SDA120K.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; 59W; TO220-2
Technology: SiC
Power dissipation: 59W
Case: TO220-2
Mounting: THT
Semiconductor structure: single diode
Max. off-state voltage: 1.2kV
Heatsink thickness: 1.14...1.4mm
Type of diode: Schottky rectifying
Leakage current: 50µA
Max. forward impulse current: 75A
Load current: 10A
Max. forward voltage: 2.1V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
MSC010SDA170B MSC010SDA170B MICROCHIP (MICROSEMI) MSC010SDA170B.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.7kV; 10A; 71W; TO247-2
Technology: SiC
Power dissipation: 71W
Case: TO247-2
Mounting: THT
Semiconductor structure: single diode
Max. off-state voltage: 1.7kV
Type of diode: Schottky rectifying
Leakage current: 10µA
Max. forward impulse current: 90A
Load current: 10A
Max. forward voltage: 2.1V
Produkt ist nicht verfügbar
MSC010SDA170B MSC010SDA170B MICROCHIP (MICROSEMI) MSC010SDA170B.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.7kV; 10A; 71W; TO247-2
Technology: SiC
Power dissipation: 71W
Case: TO247-2
Mounting: THT
Semiconductor structure: single diode
Max. off-state voltage: 1.7kV
Type of diode: Schottky rectifying
Leakage current: 10µA
Max. forward impulse current: 90A
Load current: 10A
Max. forward voltage: 2.1V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
MSC015SDA120B MSC015SDA120B MICROCHIP (MICROSEMI) MSC015SDA120B.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15A; 72W; TO247-2
Technology: SiC
Power dissipation: 72W
Case: TO247-2
Mounting: THT
Semiconductor structure: single diode
Max. off-state voltage: 1.2kV
Type of diode: Schottky rectifying
Leakage current: 10µA
Max. forward impulse current: 109A
Load current: 15A
Max. forward voltage: 2V
Produkt ist nicht verfügbar
MSC015SDA120B MSC015SDA120B MICROCHIP (MICROSEMI) MSC015SDA120B.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15A; 72W; TO247-2
Technology: SiC
Power dissipation: 72W
Case: TO247-2
Mounting: THT
Semiconductor structure: single diode
Max. off-state voltage: 1.2kV
Type of diode: Schottky rectifying
Leakage current: 10µA
Max. forward impulse current: 109A
Load current: 15A
Max. forward voltage: 2V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
MSC015SDA120K MSC015SDA120K MICROCHIP (MICROSEMI) MSC015SDA120K.PDF Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15A; 65W; TO220-2
Technology: SiC
Power dissipation: 65W
Case: TO220-2
Mounting: THT
Semiconductor structure: single diode
Max. off-state voltage: 1.2kV
Type of diode: Schottky rectifying
Leakage current: 50µA
Max. forward impulse current: 109A
Load current: 15A
Max. forward voltage: 2V
Produkt ist nicht verfügbar
MSC015SDA120K MSC015SDA120K MICROCHIP (MICROSEMI) MSC015SDA120K.PDF Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15A; 65W; TO220-2
Technology: SiC
Power dissipation: 65W
Case: TO220-2
Mounting: THT
Semiconductor structure: single diode
Max. off-state voltage: 1.2kV
Type of diode: Schottky rectifying
Leakage current: 50µA
Max. forward impulse current: 109A
Load current: 15A
Max. forward voltage: 2V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
MSC015SMA070B MSC015SMA070B MICROCHIP (MICROSEMI) 1244454-msc015sma070b-datasheet Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 700V; 99A; Idm: 350A; 400W
Polarisation: unipolar
Drain-source voltage: 700V
Power dissipation: 400W
Case: TO247-3
Mounting: THT
Gate charge: 215nC
Technology: SiC
Kind of channel: enhanced
Drain current: 99A
Pulsed drain current: 350A
On-state resistance: 19mΩ
Type of transistor: N-MOSFET
auf Bestellung 12 Stücke:
Lieferzeit 14-21 Tag (e)
2+39.75 EUR
10+ 38.87 EUR
Mindestbestellmenge: 2
MSC015SMA070B MSC015SMA070B MICROCHIP (MICROSEMI) 1244454-msc015sma070b-datasheet Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 700V; 99A; Idm: 350A; 400W
Polarisation: unipolar
Drain-source voltage: 700V
Power dissipation: 400W
Case: TO247-3
Mounting: THT
Gate charge: 215nC
Technology: SiC
Kind of channel: enhanced
Drain current: 99A
Pulsed drain current: 350A
On-state resistance: 19mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
auf Bestellung 12 Stücke:
Lieferzeit 7-14 Tag (e)
2+39.75 EUR
10+ 38.87 EUR
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MSC015SMA070B4 MSC015SMA070B4 MICROCHIP (MICROSEMI) 1244686-msc015sma070b4-datasheet Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 700V; 99A; Idm: 350A; 455W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 99A
Pulsed drain current: 350A
Power dissipation: 455W
Case: TO247-4
On-state resistance: 19mΩ
Mounting: THT
Gate charge: 215nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
MSC015SMA070B4 MSC015SMA070B4 MICROCHIP (MICROSEMI) 1244686-msc015sma070b4-datasheet Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 700V; 99A; Idm: 350A; 455W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 99A
Pulsed drain current: 350A
Power dissipation: 455W
Case: TO247-4
On-state resistance: 19mΩ
Mounting: THT
Gate charge: 215nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
MSC015SMA070S MSC015SMA070S MICROCHIP (MICROSEMI) 1244455-msc015sma070s-datasheet Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 700V; 89A; Idm: 315A; 370W
Polarisation: unipolar
Drain-source voltage: 700V
Power dissipation: 370W
Case: D3PAK
Mounting: SMD
Gate charge: 215nC
Technology: SiC
Kind of channel: enhanced
Drain current: 89A
Pulsed drain current: 315A
On-state resistance: 19mΩ
Type of transistor: N-MOSFET
auf Bestellung 14 Stücke:
Lieferzeit 14-21 Tag (e)
2+40.17 EUR
Mindestbestellmenge: 2
MSC015SMA070S MSC015SMA070S MICROCHIP (MICROSEMI) 1244455-msc015sma070s-datasheet Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 700V; 89A; Idm: 315A; 370W
Polarisation: unipolar
Drain-source voltage: 700V
Power dissipation: 370W
Case: D3PAK
Mounting: SMD
Gate charge: 215nC
Technology: SiC
Kind of channel: enhanced
Drain current: 89A
Pulsed drain current: 315A
On-state resistance: 19mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
auf Bestellung 14 Stücke:
Lieferzeit 7-14 Tag (e)
2+40.17 EUR
Mindestbestellmenge: 2
MSC017SMA120B MICROCHIP (MICROSEMI) MSC017SMA120B.PDF Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 80A; Idm: 280A; 455W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 80A
Pulsed drain current: 280A
Power dissipation: 455W
Case: TO247-3
On-state resistance: 22mΩ
Mounting: THT
Gate charge: 249nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
MSC017SMA120B MICROCHIP (MICROSEMI) MSC017SMA120B.PDF Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 80A; Idm: 280A; 455W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 80A
Pulsed drain current: 280A
Power dissipation: 455W
Case: TO247-3
On-state resistance: 22mΩ
Mounting: THT
Gate charge: 249nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
MSC017SMA120B4 MICROCHIP (MICROSEMI) MSC017SMA120B4.PDF Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 80A; Idm: 280A; 455W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 80A
Pulsed drain current: 280A
Power dissipation: 455W
Case: TO247-4
On-state resistance: 22mΩ
Mounting: THT
Gate charge: 249nC
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
Produkt ist nicht verfügbar
MSC017SMA120B4 MICROCHIP (MICROSEMI) MSC017SMA120B4.PDF Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 80A; Idm: 280A; 455W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 80A
Pulsed drain current: 280A
Power dissipation: 455W
Case: TO247-4
On-state resistance: 22mΩ
Mounting: THT
Gate charge: 249nC
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
MSC020SDA120B MSC020SDA120B MICROCHIP (MICROSEMI) MSC020SDA120B.PDF Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; 80W; Ufmax: 2.1V
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 20A
Power dissipation: 80W
Semiconductor structure: single diode
Case: TO247AC Modified
Max. forward impulse current: 115A
Max. forward voltage: 2.1V
Leakage current: 0.1mA
Produkt ist nicht verfügbar
MSC020SDA120B MSC020SDA120B MICROCHIP (MICROSEMI) MSC020SDA120B.PDF Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; 80W; Ufmax: 2.1V
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 20A
Power dissipation: 80W
Semiconductor structure: single diode
Case: TO247AC Modified
Max. forward impulse current: 115A
Max. forward voltage: 2.1V
Leakage current: 0.1mA
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
MSC020SDA120K MSC020SDA120K MICROCHIP (MICROSEMI) MSC020SDA120K.PDF Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; 80W; TO220-2
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 20A
Power dissipation: 80W
Semiconductor structure: single diode
Case: TO220-2
Max. forward impulse current: 115A
Max. forward voltage: 2.1V
Leakage current: 0.1mA
Produkt ist nicht verfügbar
MSC020SDA120K MSC020SDA120K MICROCHIP (MICROSEMI) MSC020SDA120K.PDF Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; 80W; TO220-2
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 20A
Power dissipation: 80W
Semiconductor structure: single diode
Case: TO220-2
Max. forward impulse current: 115A
Max. forward voltage: 2.1V
Leakage current: 0.1mA
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
MSC025SMA120B MSC025SMA120B MICROCHIP (MICROSEMI) 1243495-msc025sma120b-datasheet Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 73A; Idm: 275A; 500W
Polarisation: unipolar
Drain-source voltage: 1.2kV
Power dissipation: 500W
Case: TO247-3
Mounting: THT
Gate charge: 232nC
Technology: SiC
Kind of channel: enhanced
Drain current: 73A
Pulsed drain current: 275A
On-state resistance: 31mΩ
Type of transistor: N-MOSFET
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
2+44.53 EUR
25+ 43.8 EUR
30+ 43.41 EUR
Mindestbestellmenge: 2
MSC025SMA120B MSC025SMA120B MICROCHIP (MICROSEMI) 1243495-msc025sma120b-datasheet Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 73A; Idm: 275A; 500W
Polarisation: unipolar
Drain-source voltage: 1.2kV
Power dissipation: 500W
Case: TO247-3
Mounting: THT
Gate charge: 232nC
Technology: SiC
Kind of channel: enhanced
Drain current: 73A
Pulsed drain current: 275A
On-state resistance: 31mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
auf Bestellung 30 Stücke:
Lieferzeit 7-14 Tag (e)
2+44.53 EUR
25+ 43.8 EUR
30+ 43.41 EUR
Mindestbestellmenge: 2
MSC025SMA120B4 MSC025SMA120B4 MICROCHIP (MICROSEMI) 1244597-msc025sma120b4-datasheet Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 73A; Idm: 275A; 500W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 73A
Pulsed drain current: 275A
Power dissipation: 500W
Case: TO247-4
On-state resistance: 31mΩ
Mounting: THT
Gate charge: 232nC
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
Produkt ist nicht verfügbar
MSC025SMA120B4 MSC025SMA120B4 MICROCHIP (MICROSEMI) 1244597-msc025sma120b4-datasheet Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 73A; Idm: 275A; 500W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 73A
Pulsed drain current: 275A
Power dissipation: 500W
Case: TO247-4
On-state resistance: 31mΩ
Mounting: THT
Gate charge: 232nC
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
MSC025SMA120J MSC025SMA120J MICROCHIP (MICROSEMI) 1243808-msc025sma120j-datasheet Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 54A; SOT227B; screw; Idm: 275A
Technology: SiC
Drain-source voltage: 1.2kV
Drain current: 54A
Pulsed drain current: 275A
Power dissipation: 278W
Case: SOT227B
On-state resistance: 31mΩ
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Produkt ist nicht verfügbar
MSC025SMA120J MSC025SMA120J MICROCHIP (MICROSEMI) 1243808-msc025sma120j-datasheet Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 54A; SOT227B; screw; Idm: 275A
Technology: SiC
Drain-source voltage: 1.2kV
Drain current: 54A
Pulsed drain current: 275A
Power dissipation: 278W
Case: SOT227B
On-state resistance: 31mΩ
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
MSC025SMA120S MSC025SMA120S MICROCHIP (MICROSEMI) 1244480-msc025sma120s-datasheet Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 63A; Idm: 222A; 370W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 63A
Pulsed drain current: 222A
Power dissipation: 370W
Case: D3PAK
On-state resistance: 31mΩ
Mounting: SMD
Gate charge: 232nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
MSC025SMA120S MSC025SMA120S MICROCHIP (MICROSEMI) 1244480-msc025sma120s-datasheet Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 63A; Idm: 222A; 370W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 63A
Pulsed drain current: 222A
Power dissipation: 370W
Case: D3PAK
On-state resistance: 31mΩ
Mounting: SMD
Gate charge: 232nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
MSC030SDA070B MSC030SDA070B MICROCHIP (MICROSEMI) MSC030SDA070B.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 700V; 30A; 81W; TO247-2
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 700V
Load current: 30A
Power dissipation: 81W
Semiconductor structure: single diode
Case: TO247-2
Max. forward impulse current: 148A
Max. forward voltage: 1.75V
Leakage current: 10µA
Produkt ist nicht verfügbar
MSC030SDA070B MSC030SDA070B MICROCHIP (MICROSEMI) MSC030SDA070B.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 700V; 30A; 81W; TO247-2
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 700V
Load current: 30A
Power dissipation: 81W
Semiconductor structure: single diode
Case: TO247-2
Max. forward impulse current: 148A
Max. forward voltage: 1.75V
Leakage current: 10µA
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
M2S010-TQG144I 132042-ds0128-igloo2-and-smartfusion2-datasheet
Hersteller: MICROCHIP (MICROSEMI)
Category: Programmable circuits
Description: IC: FPGA; SMD; TQFP144; I/O: 84; 1.2VDC; 166MHz; RAM: 400kB
Mounting: SMD
Case: TQFP144
Memory capacity: 256kB
RAM memory capacity: 400kB
Frequency: 166MHz
Supply voltage: 1.2V DC
Type of integrated circuit: FPGA
Number of inputs/outputs: 84
Produkt ist nicht verfügbar
MASMCJ6.0CAE3 MxSMCx6.0CA.pdf
MASMCJ6.0CAE3
Hersteller: MICROCHIP (MICROSEMI)
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 6.67V; 145.6A; bidirectional; ±5%; DO214AB
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 6V
Breakdown voltage: 6.67V
Max. forward impulse current: 145.6A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AB
Mounting: SMD
Leakage current: 1mA
auf Bestellung 12 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
10+7.65 EUR
11+ 6.51 EUR
Mindestbestellmenge: 10
MASMCJ6.0CAE3 MxSMCx6.0CA.pdf
MASMCJ6.0CAE3
Hersteller: MICROCHIP (MICROSEMI)
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 6.67V; 145.6A; bidirectional; ±5%; DO214AB
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 6V
Breakdown voltage: 6.67V
Max. forward impulse current: 145.6A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AB
Mounting: SMD
Leakage current: 1mA
Anzahl je Verpackung: 1 Stücke
auf Bestellung 12 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
10+7.65 EUR
11+ 6.51 EUR
Mindestbestellmenge: 10
MASMLG10CA 10563-msml-pdf
MASMLG10CA
Hersteller: MICROCHIP (MICROSEMI)
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 3kW; 11.7V; 176.4A; bidirectional; ±5%; DO215AB
Mounting: SMD
Case: DO215AB
Kind of package: reel; tape
Breakdown voltage: 11.7V
Leakage current: 5µA
Type of diode: TVS
Peak pulse power dissipation: 3kW
Tolerance: ±5%
Max. off-state voltage: 10V
Semiconductor structure: bidirectional
Max. forward impulse current: 176.4A
Produkt ist nicht verfügbar
MASMLG10CA 10563-msml-pdf
MASMLG10CA
Hersteller: MICROCHIP (MICROSEMI)
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 3kW; 11.7V; 176.4A; bidirectional; ±5%; DO215AB
Mounting: SMD
Case: DO215AB
Kind of package: reel; tape
Breakdown voltage: 11.7V
Leakage current: 5µA
Type of diode: TVS
Peak pulse power dissipation: 3kW
Tolerance: ±5%
Max. off-state voltage: 10V
Semiconductor structure: bidirectional
Max. forward impulse current: 176.4A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
MASMLG5.0Ae3 MxSMLx5.0A.pdf
MASMLG5.0Ae3
Hersteller: MICROCHIP (MICROSEMI)
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 3kW; 6.4V; 326A; unidirectional; ±5%; DO215AB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4V
Max. forward impulse current: 326A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO215AB
Mounting: SMD
Leakage current: 1mA
Kind of package: reel; tape
auf Bestellung 4 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
4+17.88 EUR
Mindestbestellmenge: 4
MASMLG5.0Ae3 MxSMLx5.0A.pdf
MASMLG5.0Ae3
Hersteller: MICROCHIP (MICROSEMI)
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 3kW; 6.4V; 326A; unidirectional; ±5%; DO215AB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4V
Max. forward impulse current: 326A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO215AB
Mounting: SMD
Leakage current: 1mA
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
auf Bestellung 4 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
4+17.88 EUR
6+ 11.91 EUR
10+ 7.97 EUR
Mindestbestellmenge: 4
MASMLJ16Ae3 MxSMLx5.0A.pdf
MASMLJ16Ae3
Hersteller: MICROCHIP (MICROSEMI)
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 3kW; 17.8V; 115.4A; unidirectional; ±5%; DO214AB
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 16V
Breakdown voltage: 17.8V
Max. forward impulse current: 115.4A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO214AB
Mounting: SMD
Leakage current: 2µA
auf Bestellung 10 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
8+9.02 EUR
9+ 7.98 EUR
10+ 7.68 EUR
Mindestbestellmenge: 8
MASMLJ16Ae3 MxSMLx5.0A.pdf
MASMLJ16Ae3
Hersteller: MICROCHIP (MICROSEMI)
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 3kW; 17.8V; 115.4A; unidirectional; ±5%; DO214AB
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 16V
Breakdown voltage: 17.8V
Max. forward impulse current: 115.4A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO214AB
Mounting: SMD
Leakage current: 2µA
Anzahl je Verpackung: 1 Stücke
auf Bestellung 10 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
8+9.02 EUR
9+ 7.98 EUR
10+ 7.68 EUR
Mindestbestellmenge: 8
MPLAD15KP18AE3 plad15kp.pdf
MPLAD15KP18AE3
Hersteller: MICROCHIP (MICROSEMI)
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 15kW; 20÷22.1V; 516A; unidirectional; PLAD
Type of diode: TVS
Peak pulse power dissipation: 15kW
Max. off-state voltage: 18V
Breakdown voltage: 20...22.1V
Max. forward impulse current: 516A
Semiconductor structure: unidirectional
Case: PLAD
Mounting: SMD
Leakage current: 10µA
Produkt ist nicht verfügbar
MPLAD15KP18AE3 plad15kp.pdf
MPLAD15KP18AE3
Hersteller: MICROCHIP (MICROSEMI)
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 15kW; 20÷22.1V; 516A; unidirectional; PLAD
Type of diode: TVS
Peak pulse power dissipation: 15kW
Max. off-state voltage: 18V
Breakdown voltage: 20...22.1V
Max. forward impulse current: 516A
Semiconductor structure: unidirectional
Case: PLAD
Mounting: SMD
Leakage current: 10µA
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
MPLAD15KP51CAE3 plad15kp.pdf
MPLAD15KP51CAE3
Hersteller: MICROCHIP (MICROSEMI)
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 15kW; 56.7÷62.7V; 183A; bidirectional; PLAD
Type of diode: TVS
Peak pulse power dissipation: 15kW
Max. off-state voltage: 51V
Breakdown voltage: 56.7...62.7V
Max. forward impulse current: 183A
Semiconductor structure: bidirectional
Case: PLAD
Mounting: SMD
Leakage current: 10µA
Produkt ist nicht verfügbar
MPLAD15KP51CAE3 plad15kp.pdf
MPLAD15KP51CAE3
Hersteller: MICROCHIP (MICROSEMI)
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 15kW; 56.7÷62.7V; 183A; bidirectional; PLAD
Type of diode: TVS
Peak pulse power dissipation: 15kW
Max. off-state voltage: 51V
Breakdown voltage: 56.7...62.7V
Max. forward impulse current: 183A
Semiconductor structure: bidirectional
Case: PLAD
Mounting: SMD
Leakage current: 10µA
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
MPLAD30KP260CA MPLAD30KP.pdf
Hersteller: MICROCHIP (MICROSEMI)
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 30kW; 289÷320V; 71A; bidirectional; PLAD
Breakdown voltage: 289...320V
Leakage current: 10µA
Type of diode: TVS
Peak pulse power dissipation: 30kW
Mounting: SMD
Case: PLAD
Max. off-state voltage: 260V
Semiconductor structure: bidirectional
Max. forward impulse current: 71A
Produkt ist nicht verfügbar
MPLAD30KP260CA MPLAD30KP.pdf
Hersteller: MICROCHIP (MICROSEMI)
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 30kW; 289÷320V; 71A; bidirectional; PLAD
Breakdown voltage: 289...320V
Leakage current: 10µA
Type of diode: TVS
Peak pulse power dissipation: 30kW
Mounting: SMD
Case: PLAD
Max. off-state voltage: 260V
Semiconductor structure: bidirectional
Max. forward impulse current: 71A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
MPLAD30KP30CAE3 9523-mplad30kp
Hersteller: MICROCHIP (MICROSEMI)
MPLAD30KP30CAE3 Bidirectional SMD transil diodes
Produkt ist nicht verfügbar
MPLAD30KP78AE3 9523-mplad30kp-datasheet
Hersteller: MICROCHIP (MICROSEMI)
MPLAD30KP78AE3 Unidirectional SMD transil diodes
auf Bestellung 2 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
2+35.75 EUR
Mindestbestellmenge: 2
MPLAD30KP78CAE3 9523-mplad30kp
Hersteller: MICROCHIP (MICROSEMI)
MPLAD30KP78CAE3 Bidirectional SMD transil diodes
Produkt ist nicht verfügbar
MPLAD6.5KP10CAE3 mplad6.5k.pdf
Hersteller: MICROCHIP (MICROSEMI)
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 6.5kW; 11.1÷12.3V; 383A; bidirectional; PLAD
Type of diode: TVS
Peak pulse power dissipation: 6.5kW
Max. off-state voltage: 10V
Breakdown voltage: 11.1...12.3V
Max. forward impulse current: 383A
Semiconductor structure: bidirectional
Case: PLAD
Mounting: SMD
Leakage current: 15µA
Produkt ist nicht verfügbar
MPLAD6.5KP10CAE3 mplad6.5k.pdf
Hersteller: MICROCHIP (MICROSEMI)
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 6.5kW; 11.1÷12.3V; 383A; bidirectional; PLAD
Type of diode: TVS
Peak pulse power dissipation: 6.5kW
Max. off-state voltage: 10V
Breakdown voltage: 11.1...12.3V
Max. forward impulse current: 383A
Semiconductor structure: bidirectional
Case: PLAD
Mounting: SMD
Leakage current: 15µA
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
MPLAD6.5KP11CA mplad6.5k.pdf
Hersteller: MICROCHIP (MICROSEMI)
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 6.5kW; 12.2÷13.5V; 358A; bidirectional; PLAD
Mounting: SMD
Case: PLAD
Type of diode: TVS
Breakdown voltage: 12.2...13.5V
Peak pulse power dissipation: 6.5kW
Leakage current: 10µA
Max. forward impulse current: 358A
Semiconductor structure: bidirectional
Max. off-state voltage: 11V
Produkt ist nicht verfügbar
MPLAD6.5KP11CA mplad6.5k.pdf
Hersteller: MICROCHIP (MICROSEMI)
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 6.5kW; 12.2÷13.5V; 358A; bidirectional; PLAD
Mounting: SMD
Case: PLAD
Type of diode: TVS
Breakdown voltage: 12.2...13.5V
Peak pulse power dissipation: 6.5kW
Leakage current: 10µA
Max. forward impulse current: 358A
Semiconductor structure: bidirectional
Max. off-state voltage: 11V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
MSC010SDA070B MSC010SDA070B.pdf
MSC010SDA070B
Hersteller: MICROCHIP (MICROSEMI)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 700V; 10A; 36W; TO247-2
Technology: SiC
Power dissipation: 36W
Case: TO247-2
Mounting: THT
Semiconductor structure: single diode
Max. off-state voltage: 700V
Type of diode: Schottky rectifying
Leakage current: 50µA
Max. forward impulse current: 58A
Load current: 10A
Max. forward voltage: 1.9V
auf Bestellung 150 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
120+3.69 EUR
Mindestbestellmenge: 120
MSC010SDA070B MSC010SDA070B.pdf
MSC010SDA070B
Hersteller: MICROCHIP (MICROSEMI)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 700V; 10A; 36W; TO247-2
Technology: SiC
Power dissipation: 36W
Case: TO247-2
Mounting: THT
Semiconductor structure: single diode
Max. off-state voltage: 700V
Type of diode: Schottky rectifying
Leakage current: 50µA
Max. forward impulse current: 58A
Load current: 10A
Max. forward voltage: 1.9V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 150 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
120+3.69 EUR
Mindestbestellmenge: 120
MSC010SDA070K MSC010SDA070K.pdf
MSC010SDA070K
Hersteller: MICROCHIP (MICROSEMI)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 700V; 10A; 38W; TO220-2
Technology: SiC
Power dissipation: 38W
Case: TO220-2
Mounting: THT
Semiconductor structure: single diode
Max. off-state voltage: 700V
Heatsink thickness: 1.14...1.4mm
Type of diode: Schottky rectifying
Leakage current: 50µA
Max. forward impulse current: 58A
Load current: 10A
Max. forward voltage: 2.1V
auf Bestellung 14 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
13+5.55 EUR
14+ 5.46 EUR
Mindestbestellmenge: 13
MSC010SDA070K MSC010SDA070K.pdf
MSC010SDA070K
Hersteller: MICROCHIP (MICROSEMI)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 700V; 10A; 38W; TO220-2
Technology: SiC
Power dissipation: 38W
Case: TO220-2
Mounting: THT
Semiconductor structure: single diode
Max. off-state voltage: 700V
Heatsink thickness: 1.14...1.4mm
Type of diode: Schottky rectifying
Leakage current: 50µA
Max. forward impulse current: 58A
Load current: 10A
Max. forward voltage: 2.1V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 14 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
13+5.55 EUR
14+ 5.46 EUR
Mindestbestellmenge: 13
MSC010SDA120B MSC010SDA120B.pdf
MSC010SDA120B
Hersteller: MICROCHIP (MICROSEMI)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; 50W; TO247-2
Technology: SiC
Power dissipation: 50W
Case: TO247-2
Mounting: THT
Semiconductor structure: single diode
Max. off-state voltage: 1.2kV
Type of diode: Schottky rectifying
Leakage current: 50µA
Max. forward impulse current: 75A
Load current: 10A
Max. forward voltage: 2.1V
Produkt ist nicht verfügbar
MSC010SDA120B MSC010SDA120B.pdf
MSC010SDA120B
Hersteller: MICROCHIP (MICROSEMI)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; 50W; TO247-2
Technology: SiC
Power dissipation: 50W
Case: TO247-2
Mounting: THT
Semiconductor structure: single diode
Max. off-state voltage: 1.2kV
Type of diode: Schottky rectifying
Leakage current: 50µA
Max. forward impulse current: 75A
Load current: 10A
Max. forward voltage: 2.1V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
MSC010SDA120K MSC010SDA120K.pdf
MSC010SDA120K
Hersteller: MICROCHIP (MICROSEMI)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; 59W; TO220-2
Technology: SiC
Power dissipation: 59W
Case: TO220-2
Mounting: THT
Semiconductor structure: single diode
Max. off-state voltage: 1.2kV
Heatsink thickness: 1.14...1.4mm
Type of diode: Schottky rectifying
Leakage current: 50µA
Max. forward impulse current: 75A
Load current: 10A
Max. forward voltage: 2.1V
Produkt ist nicht verfügbar
MSC010SDA120K MSC010SDA120K.pdf
MSC010SDA120K
Hersteller: MICROCHIP (MICROSEMI)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; 59W; TO220-2
Technology: SiC
Power dissipation: 59W
Case: TO220-2
Mounting: THT
Semiconductor structure: single diode
Max. off-state voltage: 1.2kV
Heatsink thickness: 1.14...1.4mm
Type of diode: Schottky rectifying
Leakage current: 50µA
Max. forward impulse current: 75A
Load current: 10A
Max. forward voltage: 2.1V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
MSC010SDA170B MSC010SDA170B.pdf
MSC010SDA170B
Hersteller: MICROCHIP (MICROSEMI)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.7kV; 10A; 71W; TO247-2
Technology: SiC
Power dissipation: 71W
Case: TO247-2
Mounting: THT
Semiconductor structure: single diode
Max. off-state voltage: 1.7kV
Type of diode: Schottky rectifying
Leakage current: 10µA
Max. forward impulse current: 90A
Load current: 10A
Max. forward voltage: 2.1V
Produkt ist nicht verfügbar
MSC010SDA170B MSC010SDA170B.pdf
MSC010SDA170B
Hersteller: MICROCHIP (MICROSEMI)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.7kV; 10A; 71W; TO247-2
Technology: SiC
Power dissipation: 71W
Case: TO247-2
Mounting: THT
Semiconductor structure: single diode
Max. off-state voltage: 1.7kV
Type of diode: Schottky rectifying
Leakage current: 10µA
Max. forward impulse current: 90A
Load current: 10A
Max. forward voltage: 2.1V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
MSC015SDA120B MSC015SDA120B.pdf
MSC015SDA120B
Hersteller: MICROCHIP (MICROSEMI)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15A; 72W; TO247-2
Technology: SiC
Power dissipation: 72W
Case: TO247-2
Mounting: THT
Semiconductor structure: single diode
Max. off-state voltage: 1.2kV
Type of diode: Schottky rectifying
Leakage current: 10µA
Max. forward impulse current: 109A
Load current: 15A
Max. forward voltage: 2V
Produkt ist nicht verfügbar
MSC015SDA120B MSC015SDA120B.pdf
MSC015SDA120B
Hersteller: MICROCHIP (MICROSEMI)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15A; 72W; TO247-2
Technology: SiC
Power dissipation: 72W
Case: TO247-2
Mounting: THT
Semiconductor structure: single diode
Max. off-state voltage: 1.2kV
Type of diode: Schottky rectifying
Leakage current: 10µA
Max. forward impulse current: 109A
Load current: 15A
Max. forward voltage: 2V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
MSC015SDA120K MSC015SDA120K.PDF
MSC015SDA120K
Hersteller: MICROCHIP (MICROSEMI)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15A; 65W; TO220-2
Technology: SiC
Power dissipation: 65W
Case: TO220-2
Mounting: THT
Semiconductor structure: single diode
Max. off-state voltage: 1.2kV
Type of diode: Schottky rectifying
Leakage current: 50µA
Max. forward impulse current: 109A
Load current: 15A
Max. forward voltage: 2V
Produkt ist nicht verfügbar
MSC015SDA120K MSC015SDA120K.PDF
MSC015SDA120K
Hersteller: MICROCHIP (MICROSEMI)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15A; 65W; TO220-2
Technology: SiC
Power dissipation: 65W
Case: TO220-2
Mounting: THT
Semiconductor structure: single diode
Max. off-state voltage: 1.2kV
Type of diode: Schottky rectifying
Leakage current: 50µA
Max. forward impulse current: 109A
Load current: 15A
Max. forward voltage: 2V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
MSC015SMA070B 1244454-msc015sma070b-datasheet
MSC015SMA070B
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 700V; 99A; Idm: 350A; 400W
Polarisation: unipolar
Drain-source voltage: 700V
Power dissipation: 400W
Case: TO247-3
Mounting: THT
Gate charge: 215nC
Technology: SiC
Kind of channel: enhanced
Drain current: 99A
Pulsed drain current: 350A
On-state resistance: 19mΩ
Type of transistor: N-MOSFET
auf Bestellung 12 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
2+39.75 EUR
10+ 38.87 EUR
Mindestbestellmenge: 2
MSC015SMA070B 1244454-msc015sma070b-datasheet
MSC015SMA070B
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 700V; 99A; Idm: 350A; 400W
Polarisation: unipolar
Drain-source voltage: 700V
Power dissipation: 400W
Case: TO247-3
Mounting: THT
Gate charge: 215nC
Technology: SiC
Kind of channel: enhanced
Drain current: 99A
Pulsed drain current: 350A
On-state resistance: 19mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
auf Bestellung 12 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
2+39.75 EUR
10+ 38.87 EUR
Mindestbestellmenge: 2
MSC015SMA070B4 1244686-msc015sma070b4-datasheet
MSC015SMA070B4
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 700V; 99A; Idm: 350A; 455W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 99A
Pulsed drain current: 350A
Power dissipation: 455W
Case: TO247-4
On-state resistance: 19mΩ
Mounting: THT
Gate charge: 215nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
MSC015SMA070B4 1244686-msc015sma070b4-datasheet
MSC015SMA070B4
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 700V; 99A; Idm: 350A; 455W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 99A
Pulsed drain current: 350A
Power dissipation: 455W
Case: TO247-4
On-state resistance: 19mΩ
Mounting: THT
Gate charge: 215nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
MSC015SMA070S 1244455-msc015sma070s-datasheet
MSC015SMA070S
Hersteller: MICROCHIP (MICROSEMI)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 700V; 89A; Idm: 315A; 370W
Polarisation: unipolar
Drain-source voltage: 700V
Power dissipation: 370W
Case: D3PAK
Mounting: SMD
Gate charge: 215nC
Technology: SiC
Kind of channel: enhanced
Drain current: 89A
Pulsed drain current: 315A
On-state resistance: 19mΩ
Type of transistor: N-MOSFET
auf Bestellung 14 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
2+40.17 EUR
Mindestbestellmenge: 2
MSC015SMA070S 1244455-msc015sma070s-datasheet
MSC015SMA070S
Hersteller: MICROCHIP (MICROSEMI)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 700V; 89A; Idm: 315A; 370W
Polarisation: unipolar
Drain-source voltage: 700V
Power dissipation: 370W
Case: D3PAK
Mounting: SMD
Gate charge: 215nC
Technology: SiC
Kind of channel: enhanced
Drain current: 89A
Pulsed drain current: 315A
On-state resistance: 19mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
auf Bestellung 14 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
2+40.17 EUR
Mindestbestellmenge: 2
MSC017SMA120B MSC017SMA120B.PDF
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 80A; Idm: 280A; 455W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 80A
Pulsed drain current: 280A
Power dissipation: 455W
Case: TO247-3
On-state resistance: 22mΩ
Mounting: THT
Gate charge: 249nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
MSC017SMA120B MSC017SMA120B.PDF
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 80A; Idm: 280A; 455W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 80A
Pulsed drain current: 280A
Power dissipation: 455W
Case: TO247-3
On-state resistance: 22mΩ
Mounting: THT
Gate charge: 249nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
MSC017SMA120B4 MSC017SMA120B4.PDF
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 80A; Idm: 280A; 455W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 80A
Pulsed drain current: 280A
Power dissipation: 455W
Case: TO247-4
On-state resistance: 22mΩ
Mounting: THT
Gate charge: 249nC
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
Produkt ist nicht verfügbar
MSC017SMA120B4 MSC017SMA120B4.PDF
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 80A; Idm: 280A; 455W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 80A
Pulsed drain current: 280A
Power dissipation: 455W
Case: TO247-4
On-state resistance: 22mΩ
Mounting: THT
Gate charge: 249nC
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
MSC020SDA120B MSC020SDA120B.PDF
MSC020SDA120B
Hersteller: MICROCHIP (MICROSEMI)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; 80W; Ufmax: 2.1V
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 20A
Power dissipation: 80W
Semiconductor structure: single diode
Case: TO247AC Modified
Max. forward impulse current: 115A
Max. forward voltage: 2.1V
Leakage current: 0.1mA
Produkt ist nicht verfügbar
MSC020SDA120B MSC020SDA120B.PDF
MSC020SDA120B
Hersteller: MICROCHIP (MICROSEMI)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; 80W; Ufmax: 2.1V
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 20A
Power dissipation: 80W
Semiconductor structure: single diode
Case: TO247AC Modified
Max. forward impulse current: 115A
Max. forward voltage: 2.1V
Leakage current: 0.1mA
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
MSC020SDA120K MSC020SDA120K.PDF
MSC020SDA120K
Hersteller: MICROCHIP (MICROSEMI)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; 80W; TO220-2
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 20A
Power dissipation: 80W
Semiconductor structure: single diode
Case: TO220-2
Max. forward impulse current: 115A
Max. forward voltage: 2.1V
Leakage current: 0.1mA
Produkt ist nicht verfügbar
MSC020SDA120K MSC020SDA120K.PDF
MSC020SDA120K
Hersteller: MICROCHIP (MICROSEMI)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; 80W; TO220-2
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 20A
Power dissipation: 80W
Semiconductor structure: single diode
Case: TO220-2
Max. forward impulse current: 115A
Max. forward voltage: 2.1V
Leakage current: 0.1mA
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
MSC025SMA120B 1243495-msc025sma120b-datasheet
MSC025SMA120B
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 73A; Idm: 275A; 500W
Polarisation: unipolar
Drain-source voltage: 1.2kV
Power dissipation: 500W
Case: TO247-3
Mounting: THT
Gate charge: 232nC
Technology: SiC
Kind of channel: enhanced
Drain current: 73A
Pulsed drain current: 275A
On-state resistance: 31mΩ
Type of transistor: N-MOSFET
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
2+44.53 EUR
25+ 43.8 EUR
30+ 43.41 EUR
Mindestbestellmenge: 2
MSC025SMA120B 1243495-msc025sma120b-datasheet
MSC025SMA120B
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 73A; Idm: 275A; 500W
Polarisation: unipolar
Drain-source voltage: 1.2kV
Power dissipation: 500W
Case: TO247-3
Mounting: THT
Gate charge: 232nC
Technology: SiC
Kind of channel: enhanced
Drain current: 73A
Pulsed drain current: 275A
On-state resistance: 31mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
auf Bestellung 30 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
2+44.53 EUR
25+ 43.8 EUR
30+ 43.41 EUR
Mindestbestellmenge: 2
MSC025SMA120B4 1244597-msc025sma120b4-datasheet
MSC025SMA120B4
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 73A; Idm: 275A; 500W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 73A
Pulsed drain current: 275A
Power dissipation: 500W
Case: TO247-4
On-state resistance: 31mΩ
Mounting: THT
Gate charge: 232nC
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
Produkt ist nicht verfügbar
MSC025SMA120B4 1244597-msc025sma120b4-datasheet
MSC025SMA120B4
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 73A; Idm: 275A; 500W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 73A
Pulsed drain current: 275A
Power dissipation: 500W
Case: TO247-4
On-state resistance: 31mΩ
Mounting: THT
Gate charge: 232nC
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
MSC025SMA120J 1243808-msc025sma120j-datasheet
MSC025SMA120J
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 54A; SOT227B; screw; Idm: 275A
Technology: SiC
Drain-source voltage: 1.2kV
Drain current: 54A
Pulsed drain current: 275A
Power dissipation: 278W
Case: SOT227B
On-state resistance: 31mΩ
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Produkt ist nicht verfügbar
MSC025SMA120J 1243808-msc025sma120j-datasheet
MSC025SMA120J
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 54A; SOT227B; screw; Idm: 275A
Technology: SiC
Drain-source voltage: 1.2kV
Drain current: 54A
Pulsed drain current: 275A
Power dissipation: 278W
Case: SOT227B
On-state resistance: 31mΩ
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
MSC025SMA120S 1244480-msc025sma120s-datasheet
MSC025SMA120S
Hersteller: MICROCHIP (MICROSEMI)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 63A; Idm: 222A; 370W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 63A
Pulsed drain current: 222A
Power dissipation: 370W
Case: D3PAK
On-state resistance: 31mΩ
Mounting: SMD
Gate charge: 232nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
MSC025SMA120S 1244480-msc025sma120s-datasheet
MSC025SMA120S
Hersteller: MICROCHIP (MICROSEMI)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 63A; Idm: 222A; 370W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 63A
Pulsed drain current: 222A
Power dissipation: 370W
Case: D3PAK
On-state resistance: 31mΩ
Mounting: SMD
Gate charge: 232nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
MSC030SDA070B MSC030SDA070B.pdf
MSC030SDA070B
Hersteller: MICROCHIP (MICROSEMI)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 700V; 30A; 81W; TO247-2
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 700V
Load current: 30A
Power dissipation: 81W
Semiconductor structure: single diode
Case: TO247-2
Max. forward impulse current: 148A
Max. forward voltage: 1.75V
Leakage current: 10µA
Produkt ist nicht verfügbar
MSC030SDA070B MSC030SDA070B.pdf
MSC030SDA070B
Hersteller: MICROCHIP (MICROSEMI)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 700V; 30A; 81W; TO247-2
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 700V
Load current: 30A
Power dissipation: 81W
Semiconductor structure: single diode
Case: TO247-2
Max. forward impulse current: 148A
Max. forward voltage: 1.75V
Leakage current: 10µA
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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