Produkte > MICROCHIP (MICROSEMI) > Alle Produkte des Herstellers MICROCHIP (MICROSEMI) (4150) > Seite 60 nach 70
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M2S010-TQG144I | MICROCHIP (MICROSEMI) |
![]() Description: IC: FPGA; SMD; TQFP144; I/O: 84; 1.2VDC; 166MHz; RAM: 400kB Mounting: SMD Case: TQFP144 Memory capacity: 256kB RAM memory capacity: 400kB Frequency: 166MHz Supply voltage: 1.2V DC Type of integrated circuit: FPGA Number of inputs/outputs: 84 |
Produkt ist nicht verfügbar |
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MASMCJ6.0CAE3 | MICROCHIP (MICROSEMI) |
![]() Description: Diode: TVS; 1.5kW; 6.67V; 145.6A; bidirectional; ±5%; DO214AB Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 6V Breakdown voltage: 6.67V Max. forward impulse current: 145.6A Semiconductor structure: bidirectional Tolerance: ±5% Case: DO214AB Mounting: SMD Leakage current: 1mA |
auf Bestellung 12 Stücke: Lieferzeit 14-21 Tag (e) |
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MASMCJ6.0CAE3 | MICROCHIP (MICROSEMI) |
![]() Description: Diode: TVS; 1.5kW; 6.67V; 145.6A; bidirectional; ±5%; DO214AB Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 6V Breakdown voltage: 6.67V Max. forward impulse current: 145.6A Semiconductor structure: bidirectional Tolerance: ±5% Case: DO214AB Mounting: SMD Leakage current: 1mA Anzahl je Verpackung: 1 Stücke |
auf Bestellung 12 Stücke: Lieferzeit 7-14 Tag (e) |
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MASMLG10CA | MICROCHIP (MICROSEMI) |
![]() Description: Diode: TVS; 3kW; 11.7V; 176.4A; bidirectional; ±5%; DO215AB Mounting: SMD Case: DO215AB Kind of package: reel; tape Breakdown voltage: 11.7V Leakage current: 5µA Type of diode: TVS Peak pulse power dissipation: 3kW Tolerance: ±5% Max. off-state voltage: 10V Semiconductor structure: bidirectional Max. forward impulse current: 176.4A |
Produkt ist nicht verfügbar |
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MASMLG10CA | MICROCHIP (MICROSEMI) |
![]() Description: Diode: TVS; 3kW; 11.7V; 176.4A; bidirectional; ±5%; DO215AB Mounting: SMD Case: DO215AB Kind of package: reel; tape Breakdown voltage: 11.7V Leakage current: 5µA Type of diode: TVS Peak pulse power dissipation: 3kW Tolerance: ±5% Max. off-state voltage: 10V Semiconductor structure: bidirectional Max. forward impulse current: 176.4A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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MASMLG5.0Ae3 | MICROCHIP (MICROSEMI) |
![]() Description: Diode: TVS; 3kW; 6.4V; 326A; unidirectional; ±5%; DO215AB; reel,tape Type of diode: TVS Peak pulse power dissipation: 3kW Max. off-state voltage: 5V Breakdown voltage: 6.4V Max. forward impulse current: 326A Semiconductor structure: unidirectional Tolerance: ±5% Case: DO215AB Mounting: SMD Leakage current: 1mA Kind of package: reel; tape |
auf Bestellung 4 Stücke: Lieferzeit 14-21 Tag (e) |
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MASMLG5.0Ae3 | MICROCHIP (MICROSEMI) |
![]() Description: Diode: TVS; 3kW; 6.4V; 326A; unidirectional; ±5%; DO215AB; reel,tape Type of diode: TVS Peak pulse power dissipation: 3kW Max. off-state voltage: 5V Breakdown voltage: 6.4V Max. forward impulse current: 326A Semiconductor structure: unidirectional Tolerance: ±5% Case: DO215AB Mounting: SMD Leakage current: 1mA Kind of package: reel; tape Anzahl je Verpackung: 1 Stücke |
auf Bestellung 4 Stücke: Lieferzeit 7-14 Tag (e) |
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MASMLJ16Ae3 | MICROCHIP (MICROSEMI) |
![]() Description: Diode: TVS; 3kW; 17.8V; 115.4A; unidirectional; ±5%; DO214AB Type of diode: TVS Peak pulse power dissipation: 3kW Max. off-state voltage: 16V Breakdown voltage: 17.8V Max. forward impulse current: 115.4A Semiconductor structure: unidirectional Tolerance: ±5% Case: DO214AB Mounting: SMD Leakage current: 2µA |
auf Bestellung 10 Stücke: Lieferzeit 14-21 Tag (e) |
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MASMLJ16Ae3 | MICROCHIP (MICROSEMI) |
![]() Description: Diode: TVS; 3kW; 17.8V; 115.4A; unidirectional; ±5%; DO214AB Type of diode: TVS Peak pulse power dissipation: 3kW Max. off-state voltage: 16V Breakdown voltage: 17.8V Max. forward impulse current: 115.4A Semiconductor structure: unidirectional Tolerance: ±5% Case: DO214AB Mounting: SMD Leakage current: 2µA Anzahl je Verpackung: 1 Stücke |
auf Bestellung 10 Stücke: Lieferzeit 7-14 Tag (e) |
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MPLAD15KP18AE3 | MICROCHIP (MICROSEMI) |
![]() Description: Diode: TVS; 15kW; 20÷22.1V; 516A; unidirectional; PLAD Type of diode: TVS Peak pulse power dissipation: 15kW Max. off-state voltage: 18V Breakdown voltage: 20...22.1V Max. forward impulse current: 516A Semiconductor structure: unidirectional Case: PLAD Mounting: SMD Leakage current: 10µA |
Produkt ist nicht verfügbar |
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MPLAD15KP18AE3 | MICROCHIP (MICROSEMI) |
![]() Description: Diode: TVS; 15kW; 20÷22.1V; 516A; unidirectional; PLAD Type of diode: TVS Peak pulse power dissipation: 15kW Max. off-state voltage: 18V Breakdown voltage: 20...22.1V Max. forward impulse current: 516A Semiconductor structure: unidirectional Case: PLAD Mounting: SMD Leakage current: 10µA Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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MPLAD15KP51CAE3 | MICROCHIP (MICROSEMI) |
![]() Description: Diode: TVS; 15kW; 56.7÷62.7V; 183A; bidirectional; PLAD Type of diode: TVS Peak pulse power dissipation: 15kW Max. off-state voltage: 51V Breakdown voltage: 56.7...62.7V Max. forward impulse current: 183A Semiconductor structure: bidirectional Case: PLAD Mounting: SMD Leakage current: 10µA |
Produkt ist nicht verfügbar |
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MPLAD15KP51CAE3 | MICROCHIP (MICROSEMI) |
![]() Description: Diode: TVS; 15kW; 56.7÷62.7V; 183A; bidirectional; PLAD Type of diode: TVS Peak pulse power dissipation: 15kW Max. off-state voltage: 51V Breakdown voltage: 56.7...62.7V Max. forward impulse current: 183A Semiconductor structure: bidirectional Case: PLAD Mounting: SMD Leakage current: 10µA Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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MPLAD30KP260CA | MICROCHIP (MICROSEMI) |
![]() Description: Diode: TVS; 30kW; 289÷320V; 71A; bidirectional; PLAD Breakdown voltage: 289...320V Leakage current: 10µA Type of diode: TVS Peak pulse power dissipation: 30kW Mounting: SMD Case: PLAD Max. off-state voltage: 260V Semiconductor structure: bidirectional Max. forward impulse current: 71A |
Produkt ist nicht verfügbar |
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MPLAD30KP260CA | MICROCHIP (MICROSEMI) |
![]() Description: Diode: TVS; 30kW; 289÷320V; 71A; bidirectional; PLAD Breakdown voltage: 289...320V Leakage current: 10µA Type of diode: TVS Peak pulse power dissipation: 30kW Mounting: SMD Case: PLAD Max. off-state voltage: 260V Semiconductor structure: bidirectional Max. forward impulse current: 71A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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MPLAD30KP30CAE3 | MICROCHIP (MICROSEMI) |
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Produkt ist nicht verfügbar |
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MPLAD30KP78AE3 | MICROCHIP (MICROSEMI) |
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auf Bestellung 2 Stücke: Lieferzeit 7-14 Tag (e) |
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MPLAD30KP78CAE3 | MICROCHIP (MICROSEMI) |
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Produkt ist nicht verfügbar |
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MPLAD6.5KP10CAE3 | MICROCHIP (MICROSEMI) |
![]() Description: Diode: TVS; 6.5kW; 11.1÷12.3V; 383A; bidirectional; PLAD Type of diode: TVS Peak pulse power dissipation: 6.5kW Max. off-state voltage: 10V Breakdown voltage: 11.1...12.3V Max. forward impulse current: 383A Semiconductor structure: bidirectional Case: PLAD Mounting: SMD Leakage current: 15µA |
Produkt ist nicht verfügbar |
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MPLAD6.5KP10CAE3 | MICROCHIP (MICROSEMI) |
![]() Description: Diode: TVS; 6.5kW; 11.1÷12.3V; 383A; bidirectional; PLAD Type of diode: TVS Peak pulse power dissipation: 6.5kW Max. off-state voltage: 10V Breakdown voltage: 11.1...12.3V Max. forward impulse current: 383A Semiconductor structure: bidirectional Case: PLAD Mounting: SMD Leakage current: 15µA Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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MPLAD6.5KP11CA | MICROCHIP (MICROSEMI) |
![]() Description: Diode: TVS; 6.5kW; 12.2÷13.5V; 358A; bidirectional; PLAD Mounting: SMD Case: PLAD Type of diode: TVS Breakdown voltage: 12.2...13.5V Peak pulse power dissipation: 6.5kW Leakage current: 10µA Max. forward impulse current: 358A Semiconductor structure: bidirectional Max. off-state voltage: 11V |
Produkt ist nicht verfügbar |
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MPLAD6.5KP11CA | MICROCHIP (MICROSEMI) |
![]() Description: Diode: TVS; 6.5kW; 12.2÷13.5V; 358A; bidirectional; PLAD Mounting: SMD Case: PLAD Type of diode: TVS Breakdown voltage: 12.2...13.5V Peak pulse power dissipation: 6.5kW Leakage current: 10µA Max. forward impulse current: 358A Semiconductor structure: bidirectional Max. off-state voltage: 11V Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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MSC010SDA070B | MICROCHIP (MICROSEMI) |
![]() Description: Diode: Schottky rectifying; SiC; THT; 700V; 10A; 36W; TO247-2 Technology: SiC Power dissipation: 36W Case: TO247-2 Mounting: THT Semiconductor structure: single diode Max. off-state voltage: 700V Type of diode: Schottky rectifying Leakage current: 50µA Max. forward impulse current: 58A Load current: 10A Max. forward voltage: 1.9V |
auf Bestellung 150 Stücke: Lieferzeit 14-21 Tag (e) |
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MSC010SDA070B | MICROCHIP (MICROSEMI) |
![]() Description: Diode: Schottky rectifying; SiC; THT; 700V; 10A; 36W; TO247-2 Technology: SiC Power dissipation: 36W Case: TO247-2 Mounting: THT Semiconductor structure: single diode Max. off-state voltage: 700V Type of diode: Schottky rectifying Leakage current: 50µA Max. forward impulse current: 58A Load current: 10A Max. forward voltage: 1.9V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 150 Stücke: Lieferzeit 7-14 Tag (e) |
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MSC010SDA070K | MICROCHIP (MICROSEMI) |
![]() Description: Diode: Schottky rectifying; SiC; THT; 700V; 10A; 38W; TO220-2 Technology: SiC Power dissipation: 38W Case: TO220-2 Mounting: THT Semiconductor structure: single diode Max. off-state voltage: 700V Heatsink thickness: 1.14...1.4mm Type of diode: Schottky rectifying Leakage current: 50µA Max. forward impulse current: 58A Load current: 10A Max. forward voltage: 2.1V |
auf Bestellung 14 Stücke: Lieferzeit 14-21 Tag (e) |
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MSC010SDA070K | MICROCHIP (MICROSEMI) |
![]() Description: Diode: Schottky rectifying; SiC; THT; 700V; 10A; 38W; TO220-2 Technology: SiC Power dissipation: 38W Case: TO220-2 Mounting: THT Semiconductor structure: single diode Max. off-state voltage: 700V Heatsink thickness: 1.14...1.4mm Type of diode: Schottky rectifying Leakage current: 50µA Max. forward impulse current: 58A Load current: 10A Max. forward voltage: 2.1V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 14 Stücke: Lieferzeit 7-14 Tag (e) |
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MSC010SDA120B | MICROCHIP (MICROSEMI) |
![]() Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; 50W; TO247-2 Technology: SiC Power dissipation: 50W Case: TO247-2 Mounting: THT Semiconductor structure: single diode Max. off-state voltage: 1.2kV Type of diode: Schottky rectifying Leakage current: 50µA Max. forward impulse current: 75A Load current: 10A Max. forward voltage: 2.1V |
Produkt ist nicht verfügbar |
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MSC010SDA120B | MICROCHIP (MICROSEMI) |
![]() Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; 50W; TO247-2 Technology: SiC Power dissipation: 50W Case: TO247-2 Mounting: THT Semiconductor structure: single diode Max. off-state voltage: 1.2kV Type of diode: Schottky rectifying Leakage current: 50µA Max. forward impulse current: 75A Load current: 10A Max. forward voltage: 2.1V Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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MSC010SDA120K | MICROCHIP (MICROSEMI) |
![]() Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; 59W; TO220-2 Technology: SiC Power dissipation: 59W Case: TO220-2 Mounting: THT Semiconductor structure: single diode Max. off-state voltage: 1.2kV Heatsink thickness: 1.14...1.4mm Type of diode: Schottky rectifying Leakage current: 50µA Max. forward impulse current: 75A Load current: 10A Max. forward voltage: 2.1V |
Produkt ist nicht verfügbar |
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MSC010SDA120K | MICROCHIP (MICROSEMI) |
![]() Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; 59W; TO220-2 Technology: SiC Power dissipation: 59W Case: TO220-2 Mounting: THT Semiconductor structure: single diode Max. off-state voltage: 1.2kV Heatsink thickness: 1.14...1.4mm Type of diode: Schottky rectifying Leakage current: 50µA Max. forward impulse current: 75A Load current: 10A Max. forward voltage: 2.1V Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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MSC010SDA170B | MICROCHIP (MICROSEMI) |
![]() Description: Diode: Schottky rectifying; SiC; THT; 1.7kV; 10A; 71W; TO247-2 Technology: SiC Power dissipation: 71W Case: TO247-2 Mounting: THT Semiconductor structure: single diode Max. off-state voltage: 1.7kV Type of diode: Schottky rectifying Leakage current: 10µA Max. forward impulse current: 90A Load current: 10A Max. forward voltage: 2.1V |
Produkt ist nicht verfügbar |
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MSC010SDA170B | MICROCHIP (MICROSEMI) |
![]() Description: Diode: Schottky rectifying; SiC; THT; 1.7kV; 10A; 71W; TO247-2 Technology: SiC Power dissipation: 71W Case: TO247-2 Mounting: THT Semiconductor structure: single diode Max. off-state voltage: 1.7kV Type of diode: Schottky rectifying Leakage current: 10µA Max. forward impulse current: 90A Load current: 10A Max. forward voltage: 2.1V Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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MSC015SDA120B | MICROCHIP (MICROSEMI) |
![]() Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15A; 72W; TO247-2 Technology: SiC Power dissipation: 72W Case: TO247-2 Mounting: THT Semiconductor structure: single diode Max. off-state voltage: 1.2kV Type of diode: Schottky rectifying Leakage current: 10µA Max. forward impulse current: 109A Load current: 15A Max. forward voltage: 2V |
Produkt ist nicht verfügbar |
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MSC015SDA120B | MICROCHIP (MICROSEMI) |
![]() Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15A; 72W; TO247-2 Technology: SiC Power dissipation: 72W Case: TO247-2 Mounting: THT Semiconductor structure: single diode Max. off-state voltage: 1.2kV Type of diode: Schottky rectifying Leakage current: 10µA Max. forward impulse current: 109A Load current: 15A Max. forward voltage: 2V Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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MSC015SDA120K | MICROCHIP (MICROSEMI) |
![]() Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15A; 65W; TO220-2 Technology: SiC Power dissipation: 65W Case: TO220-2 Mounting: THT Semiconductor structure: single diode Max. off-state voltage: 1.2kV Type of diode: Schottky rectifying Leakage current: 50µA Max. forward impulse current: 109A Load current: 15A Max. forward voltage: 2V |
Produkt ist nicht verfügbar |
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MSC015SDA120K | MICROCHIP (MICROSEMI) |
![]() Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15A; 65W; TO220-2 Technology: SiC Power dissipation: 65W Case: TO220-2 Mounting: THT Semiconductor structure: single diode Max. off-state voltage: 1.2kV Type of diode: Schottky rectifying Leakage current: 50µA Max. forward impulse current: 109A Load current: 15A Max. forward voltage: 2V Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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MSC015SMA070B | MICROCHIP (MICROSEMI) |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 700V; 99A; Idm: 350A; 400W Polarisation: unipolar Drain-source voltage: 700V Power dissipation: 400W Case: TO247-3 Mounting: THT Gate charge: 215nC Technology: SiC Kind of channel: enhanced Drain current: 99A Pulsed drain current: 350A On-state resistance: 19mΩ Type of transistor: N-MOSFET |
auf Bestellung 12 Stücke: Lieferzeit 14-21 Tag (e) |
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MSC015SMA070B | MICROCHIP (MICROSEMI) |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 700V; 99A; Idm: 350A; 400W Polarisation: unipolar Drain-source voltage: 700V Power dissipation: 400W Case: TO247-3 Mounting: THT Gate charge: 215nC Technology: SiC Kind of channel: enhanced Drain current: 99A Pulsed drain current: 350A On-state resistance: 19mΩ Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke |
auf Bestellung 12 Stücke: Lieferzeit 7-14 Tag (e) |
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MSC015SMA070B4 | MICROCHIP (MICROSEMI) |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 700V; 99A; Idm: 350A; 455W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 700V Drain current: 99A Pulsed drain current: 350A Power dissipation: 455W Case: TO247-4 On-state resistance: 19mΩ Mounting: THT Gate charge: 215nC Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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MSC015SMA070B4 | MICROCHIP (MICROSEMI) |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 700V; 99A; Idm: 350A; 455W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 700V Drain current: 99A Pulsed drain current: 350A Power dissipation: 455W Case: TO247-4 On-state resistance: 19mΩ Mounting: THT Gate charge: 215nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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MSC015SMA070S | MICROCHIP (MICROSEMI) |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 700V; 89A; Idm: 315A; 370W Polarisation: unipolar Drain-source voltage: 700V Power dissipation: 370W Case: D3PAK Mounting: SMD Gate charge: 215nC Technology: SiC Kind of channel: enhanced Drain current: 89A Pulsed drain current: 315A On-state resistance: 19mΩ Type of transistor: N-MOSFET |
auf Bestellung 14 Stücke: Lieferzeit 14-21 Tag (e) |
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MSC015SMA070S | MICROCHIP (MICROSEMI) |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 700V; 89A; Idm: 315A; 370W Polarisation: unipolar Drain-source voltage: 700V Power dissipation: 370W Case: D3PAK Mounting: SMD Gate charge: 215nC Technology: SiC Kind of channel: enhanced Drain current: 89A Pulsed drain current: 315A On-state resistance: 19mΩ Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke |
auf Bestellung 14 Stücke: Lieferzeit 7-14 Tag (e) |
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MSC017SMA120B | MICROCHIP (MICROSEMI) |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 80A; Idm: 280A; 455W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 80A Pulsed drain current: 280A Power dissipation: 455W Case: TO247-3 On-state resistance: 22mΩ Mounting: THT Gate charge: 249nC Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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MSC017SMA120B | MICROCHIP (MICROSEMI) |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 80A; Idm: 280A; 455W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 80A Pulsed drain current: 280A Power dissipation: 455W Case: TO247-3 On-state resistance: 22mΩ Mounting: THT Gate charge: 249nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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MSC017SMA120B4 | MICROCHIP (MICROSEMI) |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 80A; Idm: 280A; 455W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 80A Pulsed drain current: 280A Power dissipation: 455W Case: TO247-4 On-state resistance: 22mΩ Mounting: THT Gate charge: 249nC Kind of channel: enhanced Features of semiconductor devices: Kelvin terminal |
Produkt ist nicht verfügbar |
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MSC017SMA120B4 | MICROCHIP (MICROSEMI) |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 80A; Idm: 280A; 455W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 80A Pulsed drain current: 280A Power dissipation: 455W Case: TO247-4 On-state resistance: 22mΩ Mounting: THT Gate charge: 249nC Kind of channel: enhanced Features of semiconductor devices: Kelvin terminal Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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MSC020SDA120B | MICROCHIP (MICROSEMI) |
![]() Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; 80W; Ufmax: 2.1V Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 20A Power dissipation: 80W Semiconductor structure: single diode Case: TO247AC Modified Max. forward impulse current: 115A Max. forward voltage: 2.1V Leakage current: 0.1mA |
Produkt ist nicht verfügbar |
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MSC020SDA120B | MICROCHIP (MICROSEMI) |
![]() Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; 80W; Ufmax: 2.1V Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 20A Power dissipation: 80W Semiconductor structure: single diode Case: TO247AC Modified Max. forward impulse current: 115A Max. forward voltage: 2.1V Leakage current: 0.1mA Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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MSC020SDA120K | MICROCHIP (MICROSEMI) |
![]() Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; 80W; TO220-2 Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 20A Power dissipation: 80W Semiconductor structure: single diode Case: TO220-2 Max. forward impulse current: 115A Max. forward voltage: 2.1V Leakage current: 0.1mA |
Produkt ist nicht verfügbar |
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MSC020SDA120K | MICROCHIP (MICROSEMI) |
![]() Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; 80W; TO220-2 Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 20A Power dissipation: 80W Semiconductor structure: single diode Case: TO220-2 Max. forward impulse current: 115A Max. forward voltage: 2.1V Leakage current: 0.1mA Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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MSC025SMA120B | MICROCHIP (MICROSEMI) |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 73A; Idm: 275A; 500W Polarisation: unipolar Drain-source voltage: 1.2kV Power dissipation: 500W Case: TO247-3 Mounting: THT Gate charge: 232nC Technology: SiC Kind of channel: enhanced Drain current: 73A Pulsed drain current: 275A On-state resistance: 31mΩ Type of transistor: N-MOSFET |
auf Bestellung 30 Stücke: Lieferzeit 14-21 Tag (e) |
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MSC025SMA120B | MICROCHIP (MICROSEMI) |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 73A; Idm: 275A; 500W Polarisation: unipolar Drain-source voltage: 1.2kV Power dissipation: 500W Case: TO247-3 Mounting: THT Gate charge: 232nC Technology: SiC Kind of channel: enhanced Drain current: 73A Pulsed drain current: 275A On-state resistance: 31mΩ Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke |
auf Bestellung 30 Stücke: Lieferzeit 7-14 Tag (e) |
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MSC025SMA120B4 | MICROCHIP (MICROSEMI) |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 73A; Idm: 275A; 500W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 73A Pulsed drain current: 275A Power dissipation: 500W Case: TO247-4 On-state resistance: 31mΩ Mounting: THT Gate charge: 232nC Kind of channel: enhanced Features of semiconductor devices: Kelvin terminal |
Produkt ist nicht verfügbar |
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MSC025SMA120B4 | MICROCHIP (MICROSEMI) |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 73A; Idm: 275A; 500W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 73A Pulsed drain current: 275A Power dissipation: 500W Case: TO247-4 On-state resistance: 31mΩ Mounting: THT Gate charge: 232nC Kind of channel: enhanced Features of semiconductor devices: Kelvin terminal Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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MSC025SMA120J | MICROCHIP (MICROSEMI) |
![]() Description: Module; single transistor; 1.2kV; 54A; SOT227B; screw; Idm: 275A Technology: SiC Drain-source voltage: 1.2kV Drain current: 54A Pulsed drain current: 275A Power dissipation: 278W Case: SOT227B On-state resistance: 31mΩ Semiconductor structure: single transistor Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor |
Produkt ist nicht verfügbar |
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MSC025SMA120J | MICROCHIP (MICROSEMI) |
![]() Description: Module; single transistor; 1.2kV; 54A; SOT227B; screw; Idm: 275A Technology: SiC Drain-source voltage: 1.2kV Drain current: 54A Pulsed drain current: 275A Power dissipation: 278W Case: SOT227B On-state resistance: 31mΩ Semiconductor structure: single transistor Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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MSC025SMA120S | MICROCHIP (MICROSEMI) |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 63A; Idm: 222A; 370W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 63A Pulsed drain current: 222A Power dissipation: 370W Case: D3PAK On-state resistance: 31mΩ Mounting: SMD Gate charge: 232nC Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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MSC025SMA120S | MICROCHIP (MICROSEMI) |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 63A; Idm: 222A; 370W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 63A Pulsed drain current: 222A Power dissipation: 370W Case: D3PAK On-state resistance: 31mΩ Mounting: SMD Gate charge: 232nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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MSC030SDA070B | MICROCHIP (MICROSEMI) |
![]() Description: Diode: Schottky rectifying; SiC; THT; 700V; 30A; 81W; TO247-2 Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 700V Load current: 30A Power dissipation: 81W Semiconductor structure: single diode Case: TO247-2 Max. forward impulse current: 148A Max. forward voltage: 1.75V Leakage current: 10µA |
Produkt ist nicht verfügbar |
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MSC030SDA070B | MICROCHIP (MICROSEMI) |
![]() Description: Diode: Schottky rectifying; SiC; THT; 700V; 30A; 81W; TO247-2 Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 700V Load current: 30A Power dissipation: 81W Semiconductor structure: single diode Case: TO247-2 Max. forward impulse current: 148A Max. forward voltage: 1.75V Leakage current: 10µA Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
M2S010-TQG144I |
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Hersteller: MICROCHIP (MICROSEMI)
Category: Programmable circuits
Description: IC: FPGA; SMD; TQFP144; I/O: 84; 1.2VDC; 166MHz; RAM: 400kB
Mounting: SMD
Case: TQFP144
Memory capacity: 256kB
RAM memory capacity: 400kB
Frequency: 166MHz
Supply voltage: 1.2V DC
Type of integrated circuit: FPGA
Number of inputs/outputs: 84
Category: Programmable circuits
Description: IC: FPGA; SMD; TQFP144; I/O: 84; 1.2VDC; 166MHz; RAM: 400kB
Mounting: SMD
Case: TQFP144
Memory capacity: 256kB
RAM memory capacity: 400kB
Frequency: 166MHz
Supply voltage: 1.2V DC
Type of integrated circuit: FPGA
Number of inputs/outputs: 84
Produkt ist nicht verfügbar
MASMCJ6.0CAE3 |
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Hersteller: MICROCHIP (MICROSEMI)
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 6.67V; 145.6A; bidirectional; ±5%; DO214AB
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 6V
Breakdown voltage: 6.67V
Max. forward impulse current: 145.6A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AB
Mounting: SMD
Leakage current: 1mA
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 6.67V; 145.6A; bidirectional; ±5%; DO214AB
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 6V
Breakdown voltage: 6.67V
Max. forward impulse current: 145.6A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AB
Mounting: SMD
Leakage current: 1mA
auf Bestellung 12 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
10+ | 7.65 EUR |
11+ | 6.51 EUR |
MASMCJ6.0CAE3 |
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Hersteller: MICROCHIP (MICROSEMI)
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 6.67V; 145.6A; bidirectional; ±5%; DO214AB
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 6V
Breakdown voltage: 6.67V
Max. forward impulse current: 145.6A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AB
Mounting: SMD
Leakage current: 1mA
Anzahl je Verpackung: 1 Stücke
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 6.67V; 145.6A; bidirectional; ±5%; DO214AB
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 6V
Breakdown voltage: 6.67V
Max. forward impulse current: 145.6A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AB
Mounting: SMD
Leakage current: 1mA
Anzahl je Verpackung: 1 Stücke
auf Bestellung 12 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
10+ | 7.65 EUR |
11+ | 6.51 EUR |
MASMLG10CA |
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Hersteller: MICROCHIP (MICROSEMI)
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 3kW; 11.7V; 176.4A; bidirectional; ±5%; DO215AB
Mounting: SMD
Case: DO215AB
Kind of package: reel; tape
Breakdown voltage: 11.7V
Leakage current: 5µA
Type of diode: TVS
Peak pulse power dissipation: 3kW
Tolerance: ±5%
Max. off-state voltage: 10V
Semiconductor structure: bidirectional
Max. forward impulse current: 176.4A
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 3kW; 11.7V; 176.4A; bidirectional; ±5%; DO215AB
Mounting: SMD
Case: DO215AB
Kind of package: reel; tape
Breakdown voltage: 11.7V
Leakage current: 5µA
Type of diode: TVS
Peak pulse power dissipation: 3kW
Tolerance: ±5%
Max. off-state voltage: 10V
Semiconductor structure: bidirectional
Max. forward impulse current: 176.4A
Produkt ist nicht verfügbar
MASMLG10CA |
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Hersteller: MICROCHIP (MICROSEMI)
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 3kW; 11.7V; 176.4A; bidirectional; ±5%; DO215AB
Mounting: SMD
Case: DO215AB
Kind of package: reel; tape
Breakdown voltage: 11.7V
Leakage current: 5µA
Type of diode: TVS
Peak pulse power dissipation: 3kW
Tolerance: ±5%
Max. off-state voltage: 10V
Semiconductor structure: bidirectional
Max. forward impulse current: 176.4A
Anzahl je Verpackung: 1 Stücke
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 3kW; 11.7V; 176.4A; bidirectional; ±5%; DO215AB
Mounting: SMD
Case: DO215AB
Kind of package: reel; tape
Breakdown voltage: 11.7V
Leakage current: 5µA
Type of diode: TVS
Peak pulse power dissipation: 3kW
Tolerance: ±5%
Max. off-state voltage: 10V
Semiconductor structure: bidirectional
Max. forward impulse current: 176.4A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
MASMLG5.0Ae3 |
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Hersteller: MICROCHIP (MICROSEMI)
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 3kW; 6.4V; 326A; unidirectional; ±5%; DO215AB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4V
Max. forward impulse current: 326A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO215AB
Mounting: SMD
Leakage current: 1mA
Kind of package: reel; tape
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 3kW; 6.4V; 326A; unidirectional; ±5%; DO215AB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4V
Max. forward impulse current: 326A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO215AB
Mounting: SMD
Leakage current: 1mA
Kind of package: reel; tape
auf Bestellung 4 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
4+ | 17.88 EUR |
MASMLG5.0Ae3 |
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Hersteller: MICROCHIP (MICROSEMI)
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 3kW; 6.4V; 326A; unidirectional; ±5%; DO215AB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4V
Max. forward impulse current: 326A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO215AB
Mounting: SMD
Leakage current: 1mA
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 3kW; 6.4V; 326A; unidirectional; ±5%; DO215AB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4V
Max. forward impulse current: 326A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO215AB
Mounting: SMD
Leakage current: 1mA
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
auf Bestellung 4 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
4+ | 17.88 EUR |
6+ | 11.91 EUR |
10+ | 7.97 EUR |
MASMLJ16Ae3 |
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Hersteller: MICROCHIP (MICROSEMI)
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 3kW; 17.8V; 115.4A; unidirectional; ±5%; DO214AB
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 16V
Breakdown voltage: 17.8V
Max. forward impulse current: 115.4A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO214AB
Mounting: SMD
Leakage current: 2µA
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 3kW; 17.8V; 115.4A; unidirectional; ±5%; DO214AB
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 16V
Breakdown voltage: 17.8V
Max. forward impulse current: 115.4A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO214AB
Mounting: SMD
Leakage current: 2µA
auf Bestellung 10 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
8+ | 9.02 EUR |
9+ | 7.98 EUR |
10+ | 7.68 EUR |
MASMLJ16Ae3 |
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Hersteller: MICROCHIP (MICROSEMI)
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 3kW; 17.8V; 115.4A; unidirectional; ±5%; DO214AB
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 16V
Breakdown voltage: 17.8V
Max. forward impulse current: 115.4A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO214AB
Mounting: SMD
Leakage current: 2µA
Anzahl je Verpackung: 1 Stücke
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 3kW; 17.8V; 115.4A; unidirectional; ±5%; DO214AB
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 16V
Breakdown voltage: 17.8V
Max. forward impulse current: 115.4A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO214AB
Mounting: SMD
Leakage current: 2µA
Anzahl je Verpackung: 1 Stücke
auf Bestellung 10 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
8+ | 9.02 EUR |
9+ | 7.98 EUR |
10+ | 7.68 EUR |
MPLAD15KP18AE3 |
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Hersteller: MICROCHIP (MICROSEMI)
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 15kW; 20÷22.1V; 516A; unidirectional; PLAD
Type of diode: TVS
Peak pulse power dissipation: 15kW
Max. off-state voltage: 18V
Breakdown voltage: 20...22.1V
Max. forward impulse current: 516A
Semiconductor structure: unidirectional
Case: PLAD
Mounting: SMD
Leakage current: 10µA
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 15kW; 20÷22.1V; 516A; unidirectional; PLAD
Type of diode: TVS
Peak pulse power dissipation: 15kW
Max. off-state voltage: 18V
Breakdown voltage: 20...22.1V
Max. forward impulse current: 516A
Semiconductor structure: unidirectional
Case: PLAD
Mounting: SMD
Leakage current: 10µA
Produkt ist nicht verfügbar
MPLAD15KP18AE3 |
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Hersteller: MICROCHIP (MICROSEMI)
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 15kW; 20÷22.1V; 516A; unidirectional; PLAD
Type of diode: TVS
Peak pulse power dissipation: 15kW
Max. off-state voltage: 18V
Breakdown voltage: 20...22.1V
Max. forward impulse current: 516A
Semiconductor structure: unidirectional
Case: PLAD
Mounting: SMD
Leakage current: 10µA
Anzahl je Verpackung: 1 Stücke
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 15kW; 20÷22.1V; 516A; unidirectional; PLAD
Type of diode: TVS
Peak pulse power dissipation: 15kW
Max. off-state voltage: 18V
Breakdown voltage: 20...22.1V
Max. forward impulse current: 516A
Semiconductor structure: unidirectional
Case: PLAD
Mounting: SMD
Leakage current: 10µA
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
MPLAD15KP51CAE3 |
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Hersteller: MICROCHIP (MICROSEMI)
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 15kW; 56.7÷62.7V; 183A; bidirectional; PLAD
Type of diode: TVS
Peak pulse power dissipation: 15kW
Max. off-state voltage: 51V
Breakdown voltage: 56.7...62.7V
Max. forward impulse current: 183A
Semiconductor structure: bidirectional
Case: PLAD
Mounting: SMD
Leakage current: 10µA
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 15kW; 56.7÷62.7V; 183A; bidirectional; PLAD
Type of diode: TVS
Peak pulse power dissipation: 15kW
Max. off-state voltage: 51V
Breakdown voltage: 56.7...62.7V
Max. forward impulse current: 183A
Semiconductor structure: bidirectional
Case: PLAD
Mounting: SMD
Leakage current: 10µA
Produkt ist nicht verfügbar
MPLAD15KP51CAE3 |
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Hersteller: MICROCHIP (MICROSEMI)
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 15kW; 56.7÷62.7V; 183A; bidirectional; PLAD
Type of diode: TVS
Peak pulse power dissipation: 15kW
Max. off-state voltage: 51V
Breakdown voltage: 56.7...62.7V
Max. forward impulse current: 183A
Semiconductor structure: bidirectional
Case: PLAD
Mounting: SMD
Leakage current: 10µA
Anzahl je Verpackung: 1 Stücke
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 15kW; 56.7÷62.7V; 183A; bidirectional; PLAD
Type of diode: TVS
Peak pulse power dissipation: 15kW
Max. off-state voltage: 51V
Breakdown voltage: 56.7...62.7V
Max. forward impulse current: 183A
Semiconductor structure: bidirectional
Case: PLAD
Mounting: SMD
Leakage current: 10µA
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
MPLAD30KP260CA |
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Hersteller: MICROCHIP (MICROSEMI)
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 30kW; 289÷320V; 71A; bidirectional; PLAD
Breakdown voltage: 289...320V
Leakage current: 10µA
Type of diode: TVS
Peak pulse power dissipation: 30kW
Mounting: SMD
Case: PLAD
Max. off-state voltage: 260V
Semiconductor structure: bidirectional
Max. forward impulse current: 71A
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 30kW; 289÷320V; 71A; bidirectional; PLAD
Breakdown voltage: 289...320V
Leakage current: 10µA
Type of diode: TVS
Peak pulse power dissipation: 30kW
Mounting: SMD
Case: PLAD
Max. off-state voltage: 260V
Semiconductor structure: bidirectional
Max. forward impulse current: 71A
Produkt ist nicht verfügbar
MPLAD30KP260CA |
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Hersteller: MICROCHIP (MICROSEMI)
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 30kW; 289÷320V; 71A; bidirectional; PLAD
Breakdown voltage: 289...320V
Leakage current: 10µA
Type of diode: TVS
Peak pulse power dissipation: 30kW
Mounting: SMD
Case: PLAD
Max. off-state voltage: 260V
Semiconductor structure: bidirectional
Max. forward impulse current: 71A
Anzahl je Verpackung: 1 Stücke
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 30kW; 289÷320V; 71A; bidirectional; PLAD
Breakdown voltage: 289...320V
Leakage current: 10µA
Type of diode: TVS
Peak pulse power dissipation: 30kW
Mounting: SMD
Case: PLAD
Max. off-state voltage: 260V
Semiconductor structure: bidirectional
Max. forward impulse current: 71A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
MPLAD30KP30CAE3 |
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Hersteller: MICROCHIP (MICROSEMI)
MPLAD30KP30CAE3 Bidirectional SMD transil diodes
MPLAD30KP30CAE3 Bidirectional SMD transil diodes
Produkt ist nicht verfügbar
MPLAD30KP78AE3 |
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Hersteller: MICROCHIP (MICROSEMI)
MPLAD30KP78AE3 Unidirectional SMD transil diodes
MPLAD30KP78AE3 Unidirectional SMD transil diodes
auf Bestellung 2 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2+ | 35.75 EUR |
MPLAD30KP78CAE3 |
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Hersteller: MICROCHIP (MICROSEMI)
MPLAD30KP78CAE3 Bidirectional SMD transil diodes
MPLAD30KP78CAE3 Bidirectional SMD transil diodes
Produkt ist nicht verfügbar
MPLAD6.5KP10CAE3 |
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Hersteller: MICROCHIP (MICROSEMI)
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 6.5kW; 11.1÷12.3V; 383A; bidirectional; PLAD
Type of diode: TVS
Peak pulse power dissipation: 6.5kW
Max. off-state voltage: 10V
Breakdown voltage: 11.1...12.3V
Max. forward impulse current: 383A
Semiconductor structure: bidirectional
Case: PLAD
Mounting: SMD
Leakage current: 15µA
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 6.5kW; 11.1÷12.3V; 383A; bidirectional; PLAD
Type of diode: TVS
Peak pulse power dissipation: 6.5kW
Max. off-state voltage: 10V
Breakdown voltage: 11.1...12.3V
Max. forward impulse current: 383A
Semiconductor structure: bidirectional
Case: PLAD
Mounting: SMD
Leakage current: 15µA
Produkt ist nicht verfügbar
MPLAD6.5KP10CAE3 |
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Hersteller: MICROCHIP (MICROSEMI)
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 6.5kW; 11.1÷12.3V; 383A; bidirectional; PLAD
Type of diode: TVS
Peak pulse power dissipation: 6.5kW
Max. off-state voltage: 10V
Breakdown voltage: 11.1...12.3V
Max. forward impulse current: 383A
Semiconductor structure: bidirectional
Case: PLAD
Mounting: SMD
Leakage current: 15µA
Anzahl je Verpackung: 1 Stücke
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 6.5kW; 11.1÷12.3V; 383A; bidirectional; PLAD
Type of diode: TVS
Peak pulse power dissipation: 6.5kW
Max. off-state voltage: 10V
Breakdown voltage: 11.1...12.3V
Max. forward impulse current: 383A
Semiconductor structure: bidirectional
Case: PLAD
Mounting: SMD
Leakage current: 15µA
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
MPLAD6.5KP11CA |
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Hersteller: MICROCHIP (MICROSEMI)
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 6.5kW; 12.2÷13.5V; 358A; bidirectional; PLAD
Mounting: SMD
Case: PLAD
Type of diode: TVS
Breakdown voltage: 12.2...13.5V
Peak pulse power dissipation: 6.5kW
Leakage current: 10µA
Max. forward impulse current: 358A
Semiconductor structure: bidirectional
Max. off-state voltage: 11V
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 6.5kW; 12.2÷13.5V; 358A; bidirectional; PLAD
Mounting: SMD
Case: PLAD
Type of diode: TVS
Breakdown voltage: 12.2...13.5V
Peak pulse power dissipation: 6.5kW
Leakage current: 10µA
Max. forward impulse current: 358A
Semiconductor structure: bidirectional
Max. off-state voltage: 11V
Produkt ist nicht verfügbar
MPLAD6.5KP11CA |
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Hersteller: MICROCHIP (MICROSEMI)
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 6.5kW; 12.2÷13.5V; 358A; bidirectional; PLAD
Mounting: SMD
Case: PLAD
Type of diode: TVS
Breakdown voltage: 12.2...13.5V
Peak pulse power dissipation: 6.5kW
Leakage current: 10µA
Max. forward impulse current: 358A
Semiconductor structure: bidirectional
Max. off-state voltage: 11V
Anzahl je Verpackung: 1 Stücke
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 6.5kW; 12.2÷13.5V; 358A; bidirectional; PLAD
Mounting: SMD
Case: PLAD
Type of diode: TVS
Breakdown voltage: 12.2...13.5V
Peak pulse power dissipation: 6.5kW
Leakage current: 10µA
Max. forward impulse current: 358A
Semiconductor structure: bidirectional
Max. off-state voltage: 11V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
MSC010SDA070B |
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Hersteller: MICROCHIP (MICROSEMI)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 700V; 10A; 36W; TO247-2
Technology: SiC
Power dissipation: 36W
Case: TO247-2
Mounting: THT
Semiconductor structure: single diode
Max. off-state voltage: 700V
Type of diode: Schottky rectifying
Leakage current: 50µA
Max. forward impulse current: 58A
Load current: 10A
Max. forward voltage: 1.9V
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 700V; 10A; 36W; TO247-2
Technology: SiC
Power dissipation: 36W
Case: TO247-2
Mounting: THT
Semiconductor structure: single diode
Max. off-state voltage: 700V
Type of diode: Schottky rectifying
Leakage current: 50µA
Max. forward impulse current: 58A
Load current: 10A
Max. forward voltage: 1.9V
auf Bestellung 150 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
120+ | 3.69 EUR |
MSC010SDA070B |
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Hersteller: MICROCHIP (MICROSEMI)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 700V; 10A; 36W; TO247-2
Technology: SiC
Power dissipation: 36W
Case: TO247-2
Mounting: THT
Semiconductor structure: single diode
Max. off-state voltage: 700V
Type of diode: Schottky rectifying
Leakage current: 50µA
Max. forward impulse current: 58A
Load current: 10A
Max. forward voltage: 1.9V
Anzahl je Verpackung: 1 Stücke
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 700V; 10A; 36W; TO247-2
Technology: SiC
Power dissipation: 36W
Case: TO247-2
Mounting: THT
Semiconductor structure: single diode
Max. off-state voltage: 700V
Type of diode: Schottky rectifying
Leakage current: 50µA
Max. forward impulse current: 58A
Load current: 10A
Max. forward voltage: 1.9V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 150 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
120+ | 3.69 EUR |
MSC010SDA070K |
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Hersteller: MICROCHIP (MICROSEMI)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 700V; 10A; 38W; TO220-2
Technology: SiC
Power dissipation: 38W
Case: TO220-2
Mounting: THT
Semiconductor structure: single diode
Max. off-state voltage: 700V
Heatsink thickness: 1.14...1.4mm
Type of diode: Schottky rectifying
Leakage current: 50µA
Max. forward impulse current: 58A
Load current: 10A
Max. forward voltage: 2.1V
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 700V; 10A; 38W; TO220-2
Technology: SiC
Power dissipation: 38W
Case: TO220-2
Mounting: THT
Semiconductor structure: single diode
Max. off-state voltage: 700V
Heatsink thickness: 1.14...1.4mm
Type of diode: Schottky rectifying
Leakage current: 50µA
Max. forward impulse current: 58A
Load current: 10A
Max. forward voltage: 2.1V
auf Bestellung 14 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
13+ | 5.55 EUR |
14+ | 5.46 EUR |
MSC010SDA070K |
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Hersteller: MICROCHIP (MICROSEMI)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 700V; 10A; 38W; TO220-2
Technology: SiC
Power dissipation: 38W
Case: TO220-2
Mounting: THT
Semiconductor structure: single diode
Max. off-state voltage: 700V
Heatsink thickness: 1.14...1.4mm
Type of diode: Schottky rectifying
Leakage current: 50µA
Max. forward impulse current: 58A
Load current: 10A
Max. forward voltage: 2.1V
Anzahl je Verpackung: 1 Stücke
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 700V; 10A; 38W; TO220-2
Technology: SiC
Power dissipation: 38W
Case: TO220-2
Mounting: THT
Semiconductor structure: single diode
Max. off-state voltage: 700V
Heatsink thickness: 1.14...1.4mm
Type of diode: Schottky rectifying
Leakage current: 50µA
Max. forward impulse current: 58A
Load current: 10A
Max. forward voltage: 2.1V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 14 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
13+ | 5.55 EUR |
14+ | 5.46 EUR |
MSC010SDA120B |
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Hersteller: MICROCHIP (MICROSEMI)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; 50W; TO247-2
Technology: SiC
Power dissipation: 50W
Case: TO247-2
Mounting: THT
Semiconductor structure: single diode
Max. off-state voltage: 1.2kV
Type of diode: Schottky rectifying
Leakage current: 50µA
Max. forward impulse current: 75A
Load current: 10A
Max. forward voltage: 2.1V
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; 50W; TO247-2
Technology: SiC
Power dissipation: 50W
Case: TO247-2
Mounting: THT
Semiconductor structure: single diode
Max. off-state voltage: 1.2kV
Type of diode: Schottky rectifying
Leakage current: 50µA
Max. forward impulse current: 75A
Load current: 10A
Max. forward voltage: 2.1V
Produkt ist nicht verfügbar
MSC010SDA120B |
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Hersteller: MICROCHIP (MICROSEMI)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; 50W; TO247-2
Technology: SiC
Power dissipation: 50W
Case: TO247-2
Mounting: THT
Semiconductor structure: single diode
Max. off-state voltage: 1.2kV
Type of diode: Schottky rectifying
Leakage current: 50µA
Max. forward impulse current: 75A
Load current: 10A
Max. forward voltage: 2.1V
Anzahl je Verpackung: 1 Stücke
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; 50W; TO247-2
Technology: SiC
Power dissipation: 50W
Case: TO247-2
Mounting: THT
Semiconductor structure: single diode
Max. off-state voltage: 1.2kV
Type of diode: Schottky rectifying
Leakage current: 50µA
Max. forward impulse current: 75A
Load current: 10A
Max. forward voltage: 2.1V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
MSC010SDA120K |
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Hersteller: MICROCHIP (MICROSEMI)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; 59W; TO220-2
Technology: SiC
Power dissipation: 59W
Case: TO220-2
Mounting: THT
Semiconductor structure: single diode
Max. off-state voltage: 1.2kV
Heatsink thickness: 1.14...1.4mm
Type of diode: Schottky rectifying
Leakage current: 50µA
Max. forward impulse current: 75A
Load current: 10A
Max. forward voltage: 2.1V
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; 59W; TO220-2
Technology: SiC
Power dissipation: 59W
Case: TO220-2
Mounting: THT
Semiconductor structure: single diode
Max. off-state voltage: 1.2kV
Heatsink thickness: 1.14...1.4mm
Type of diode: Schottky rectifying
Leakage current: 50µA
Max. forward impulse current: 75A
Load current: 10A
Max. forward voltage: 2.1V
Produkt ist nicht verfügbar
MSC010SDA120K |
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Hersteller: MICROCHIP (MICROSEMI)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; 59W; TO220-2
Technology: SiC
Power dissipation: 59W
Case: TO220-2
Mounting: THT
Semiconductor structure: single diode
Max. off-state voltage: 1.2kV
Heatsink thickness: 1.14...1.4mm
Type of diode: Schottky rectifying
Leakage current: 50µA
Max. forward impulse current: 75A
Load current: 10A
Max. forward voltage: 2.1V
Anzahl je Verpackung: 1 Stücke
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; 59W; TO220-2
Technology: SiC
Power dissipation: 59W
Case: TO220-2
Mounting: THT
Semiconductor structure: single diode
Max. off-state voltage: 1.2kV
Heatsink thickness: 1.14...1.4mm
Type of diode: Schottky rectifying
Leakage current: 50µA
Max. forward impulse current: 75A
Load current: 10A
Max. forward voltage: 2.1V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
MSC010SDA170B |
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Hersteller: MICROCHIP (MICROSEMI)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.7kV; 10A; 71W; TO247-2
Technology: SiC
Power dissipation: 71W
Case: TO247-2
Mounting: THT
Semiconductor structure: single diode
Max. off-state voltage: 1.7kV
Type of diode: Schottky rectifying
Leakage current: 10µA
Max. forward impulse current: 90A
Load current: 10A
Max. forward voltage: 2.1V
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.7kV; 10A; 71W; TO247-2
Technology: SiC
Power dissipation: 71W
Case: TO247-2
Mounting: THT
Semiconductor structure: single diode
Max. off-state voltage: 1.7kV
Type of diode: Schottky rectifying
Leakage current: 10µA
Max. forward impulse current: 90A
Load current: 10A
Max. forward voltage: 2.1V
Produkt ist nicht verfügbar
MSC010SDA170B |
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Hersteller: MICROCHIP (MICROSEMI)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.7kV; 10A; 71W; TO247-2
Technology: SiC
Power dissipation: 71W
Case: TO247-2
Mounting: THT
Semiconductor structure: single diode
Max. off-state voltage: 1.7kV
Type of diode: Schottky rectifying
Leakage current: 10µA
Max. forward impulse current: 90A
Load current: 10A
Max. forward voltage: 2.1V
Anzahl je Verpackung: 1 Stücke
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.7kV; 10A; 71W; TO247-2
Technology: SiC
Power dissipation: 71W
Case: TO247-2
Mounting: THT
Semiconductor structure: single diode
Max. off-state voltage: 1.7kV
Type of diode: Schottky rectifying
Leakage current: 10µA
Max. forward impulse current: 90A
Load current: 10A
Max. forward voltage: 2.1V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
MSC015SDA120B |
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Hersteller: MICROCHIP (MICROSEMI)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15A; 72W; TO247-2
Technology: SiC
Power dissipation: 72W
Case: TO247-2
Mounting: THT
Semiconductor structure: single diode
Max. off-state voltage: 1.2kV
Type of diode: Schottky rectifying
Leakage current: 10µA
Max. forward impulse current: 109A
Load current: 15A
Max. forward voltage: 2V
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15A; 72W; TO247-2
Technology: SiC
Power dissipation: 72W
Case: TO247-2
Mounting: THT
Semiconductor structure: single diode
Max. off-state voltage: 1.2kV
Type of diode: Schottky rectifying
Leakage current: 10µA
Max. forward impulse current: 109A
Load current: 15A
Max. forward voltage: 2V
Produkt ist nicht verfügbar
MSC015SDA120B |
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Hersteller: MICROCHIP (MICROSEMI)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15A; 72W; TO247-2
Technology: SiC
Power dissipation: 72W
Case: TO247-2
Mounting: THT
Semiconductor structure: single diode
Max. off-state voltage: 1.2kV
Type of diode: Schottky rectifying
Leakage current: 10µA
Max. forward impulse current: 109A
Load current: 15A
Max. forward voltage: 2V
Anzahl je Verpackung: 1 Stücke
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15A; 72W; TO247-2
Technology: SiC
Power dissipation: 72W
Case: TO247-2
Mounting: THT
Semiconductor structure: single diode
Max. off-state voltage: 1.2kV
Type of diode: Schottky rectifying
Leakage current: 10µA
Max. forward impulse current: 109A
Load current: 15A
Max. forward voltage: 2V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
MSC015SDA120K |
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Hersteller: MICROCHIP (MICROSEMI)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15A; 65W; TO220-2
Technology: SiC
Power dissipation: 65W
Case: TO220-2
Mounting: THT
Semiconductor structure: single diode
Max. off-state voltage: 1.2kV
Type of diode: Schottky rectifying
Leakage current: 50µA
Max. forward impulse current: 109A
Load current: 15A
Max. forward voltage: 2V
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15A; 65W; TO220-2
Technology: SiC
Power dissipation: 65W
Case: TO220-2
Mounting: THT
Semiconductor structure: single diode
Max. off-state voltage: 1.2kV
Type of diode: Schottky rectifying
Leakage current: 50µA
Max. forward impulse current: 109A
Load current: 15A
Max. forward voltage: 2V
Produkt ist nicht verfügbar
MSC015SDA120K |
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Hersteller: MICROCHIP (MICROSEMI)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15A; 65W; TO220-2
Technology: SiC
Power dissipation: 65W
Case: TO220-2
Mounting: THT
Semiconductor structure: single diode
Max. off-state voltage: 1.2kV
Type of diode: Schottky rectifying
Leakage current: 50µA
Max. forward impulse current: 109A
Load current: 15A
Max. forward voltage: 2V
Anzahl je Verpackung: 1 Stücke
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15A; 65W; TO220-2
Technology: SiC
Power dissipation: 65W
Case: TO220-2
Mounting: THT
Semiconductor structure: single diode
Max. off-state voltage: 1.2kV
Type of diode: Schottky rectifying
Leakage current: 50µA
Max. forward impulse current: 109A
Load current: 15A
Max. forward voltage: 2V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
MSC015SMA070B |
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Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 700V; 99A; Idm: 350A; 400W
Polarisation: unipolar
Drain-source voltage: 700V
Power dissipation: 400W
Case: TO247-3
Mounting: THT
Gate charge: 215nC
Technology: SiC
Kind of channel: enhanced
Drain current: 99A
Pulsed drain current: 350A
On-state resistance: 19mΩ
Type of transistor: N-MOSFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 700V; 99A; Idm: 350A; 400W
Polarisation: unipolar
Drain-source voltage: 700V
Power dissipation: 400W
Case: TO247-3
Mounting: THT
Gate charge: 215nC
Technology: SiC
Kind of channel: enhanced
Drain current: 99A
Pulsed drain current: 350A
On-state resistance: 19mΩ
Type of transistor: N-MOSFET
auf Bestellung 12 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2+ | 39.75 EUR |
10+ | 38.87 EUR |
MSC015SMA070B |
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Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 700V; 99A; Idm: 350A; 400W
Polarisation: unipolar
Drain-source voltage: 700V
Power dissipation: 400W
Case: TO247-3
Mounting: THT
Gate charge: 215nC
Technology: SiC
Kind of channel: enhanced
Drain current: 99A
Pulsed drain current: 350A
On-state resistance: 19mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 700V; 99A; Idm: 350A; 400W
Polarisation: unipolar
Drain-source voltage: 700V
Power dissipation: 400W
Case: TO247-3
Mounting: THT
Gate charge: 215nC
Technology: SiC
Kind of channel: enhanced
Drain current: 99A
Pulsed drain current: 350A
On-state resistance: 19mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
auf Bestellung 12 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2+ | 39.75 EUR |
10+ | 38.87 EUR |
MSC015SMA070B4 |
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Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 700V; 99A; Idm: 350A; 455W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 99A
Pulsed drain current: 350A
Power dissipation: 455W
Case: TO247-4
On-state resistance: 19mΩ
Mounting: THT
Gate charge: 215nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 700V; 99A; Idm: 350A; 455W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 99A
Pulsed drain current: 350A
Power dissipation: 455W
Case: TO247-4
On-state resistance: 19mΩ
Mounting: THT
Gate charge: 215nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
MSC015SMA070B4 |
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Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 700V; 99A; Idm: 350A; 455W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 99A
Pulsed drain current: 350A
Power dissipation: 455W
Case: TO247-4
On-state resistance: 19mΩ
Mounting: THT
Gate charge: 215nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 700V; 99A; Idm: 350A; 455W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 99A
Pulsed drain current: 350A
Power dissipation: 455W
Case: TO247-4
On-state resistance: 19mΩ
Mounting: THT
Gate charge: 215nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
MSC015SMA070S |
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Hersteller: MICROCHIP (MICROSEMI)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 700V; 89A; Idm: 315A; 370W
Polarisation: unipolar
Drain-source voltage: 700V
Power dissipation: 370W
Case: D3PAK
Mounting: SMD
Gate charge: 215nC
Technology: SiC
Kind of channel: enhanced
Drain current: 89A
Pulsed drain current: 315A
On-state resistance: 19mΩ
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 700V; 89A; Idm: 315A; 370W
Polarisation: unipolar
Drain-source voltage: 700V
Power dissipation: 370W
Case: D3PAK
Mounting: SMD
Gate charge: 215nC
Technology: SiC
Kind of channel: enhanced
Drain current: 89A
Pulsed drain current: 315A
On-state resistance: 19mΩ
Type of transistor: N-MOSFET
auf Bestellung 14 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2+ | 40.17 EUR |
MSC015SMA070S |
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Hersteller: MICROCHIP (MICROSEMI)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 700V; 89A; Idm: 315A; 370W
Polarisation: unipolar
Drain-source voltage: 700V
Power dissipation: 370W
Case: D3PAK
Mounting: SMD
Gate charge: 215nC
Technology: SiC
Kind of channel: enhanced
Drain current: 89A
Pulsed drain current: 315A
On-state resistance: 19mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 700V; 89A; Idm: 315A; 370W
Polarisation: unipolar
Drain-source voltage: 700V
Power dissipation: 370W
Case: D3PAK
Mounting: SMD
Gate charge: 215nC
Technology: SiC
Kind of channel: enhanced
Drain current: 89A
Pulsed drain current: 315A
On-state resistance: 19mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
auf Bestellung 14 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2+ | 40.17 EUR |
MSC017SMA120B |
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Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 80A; Idm: 280A; 455W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 80A
Pulsed drain current: 280A
Power dissipation: 455W
Case: TO247-3
On-state resistance: 22mΩ
Mounting: THT
Gate charge: 249nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 80A; Idm: 280A; 455W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 80A
Pulsed drain current: 280A
Power dissipation: 455W
Case: TO247-3
On-state resistance: 22mΩ
Mounting: THT
Gate charge: 249nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
MSC017SMA120B |
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Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 80A; Idm: 280A; 455W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 80A
Pulsed drain current: 280A
Power dissipation: 455W
Case: TO247-3
On-state resistance: 22mΩ
Mounting: THT
Gate charge: 249nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 80A; Idm: 280A; 455W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 80A
Pulsed drain current: 280A
Power dissipation: 455W
Case: TO247-3
On-state resistance: 22mΩ
Mounting: THT
Gate charge: 249nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
MSC017SMA120B4 |
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Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 80A; Idm: 280A; 455W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 80A
Pulsed drain current: 280A
Power dissipation: 455W
Case: TO247-4
On-state resistance: 22mΩ
Mounting: THT
Gate charge: 249nC
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 80A; Idm: 280A; 455W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 80A
Pulsed drain current: 280A
Power dissipation: 455W
Case: TO247-4
On-state resistance: 22mΩ
Mounting: THT
Gate charge: 249nC
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
Produkt ist nicht verfügbar
MSC017SMA120B4 |
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Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 80A; Idm: 280A; 455W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 80A
Pulsed drain current: 280A
Power dissipation: 455W
Case: TO247-4
On-state resistance: 22mΩ
Mounting: THT
Gate charge: 249nC
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 80A; Idm: 280A; 455W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 80A
Pulsed drain current: 280A
Power dissipation: 455W
Case: TO247-4
On-state resistance: 22mΩ
Mounting: THT
Gate charge: 249nC
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
MSC020SDA120B |
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Hersteller: MICROCHIP (MICROSEMI)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; 80W; Ufmax: 2.1V
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 20A
Power dissipation: 80W
Semiconductor structure: single diode
Case: TO247AC Modified
Max. forward impulse current: 115A
Max. forward voltage: 2.1V
Leakage current: 0.1mA
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; 80W; Ufmax: 2.1V
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 20A
Power dissipation: 80W
Semiconductor structure: single diode
Case: TO247AC Modified
Max. forward impulse current: 115A
Max. forward voltage: 2.1V
Leakage current: 0.1mA
Produkt ist nicht verfügbar
MSC020SDA120B |
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Hersteller: MICROCHIP (MICROSEMI)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; 80W; Ufmax: 2.1V
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 20A
Power dissipation: 80W
Semiconductor structure: single diode
Case: TO247AC Modified
Max. forward impulse current: 115A
Max. forward voltage: 2.1V
Leakage current: 0.1mA
Anzahl je Verpackung: 1 Stücke
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; 80W; Ufmax: 2.1V
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 20A
Power dissipation: 80W
Semiconductor structure: single diode
Case: TO247AC Modified
Max. forward impulse current: 115A
Max. forward voltage: 2.1V
Leakage current: 0.1mA
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
MSC020SDA120K |
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Hersteller: MICROCHIP (MICROSEMI)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; 80W; TO220-2
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 20A
Power dissipation: 80W
Semiconductor structure: single diode
Case: TO220-2
Max. forward impulse current: 115A
Max. forward voltage: 2.1V
Leakage current: 0.1mA
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; 80W; TO220-2
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 20A
Power dissipation: 80W
Semiconductor structure: single diode
Case: TO220-2
Max. forward impulse current: 115A
Max. forward voltage: 2.1V
Leakage current: 0.1mA
Produkt ist nicht verfügbar
MSC020SDA120K |
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Hersteller: MICROCHIP (MICROSEMI)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; 80W; TO220-2
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 20A
Power dissipation: 80W
Semiconductor structure: single diode
Case: TO220-2
Max. forward impulse current: 115A
Max. forward voltage: 2.1V
Leakage current: 0.1mA
Anzahl je Verpackung: 1 Stücke
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; 80W; TO220-2
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 20A
Power dissipation: 80W
Semiconductor structure: single diode
Case: TO220-2
Max. forward impulse current: 115A
Max. forward voltage: 2.1V
Leakage current: 0.1mA
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
MSC025SMA120B |
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Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 73A; Idm: 275A; 500W
Polarisation: unipolar
Drain-source voltage: 1.2kV
Power dissipation: 500W
Case: TO247-3
Mounting: THT
Gate charge: 232nC
Technology: SiC
Kind of channel: enhanced
Drain current: 73A
Pulsed drain current: 275A
On-state resistance: 31mΩ
Type of transistor: N-MOSFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 73A; Idm: 275A; 500W
Polarisation: unipolar
Drain-source voltage: 1.2kV
Power dissipation: 500W
Case: TO247-3
Mounting: THT
Gate charge: 232nC
Technology: SiC
Kind of channel: enhanced
Drain current: 73A
Pulsed drain current: 275A
On-state resistance: 31mΩ
Type of transistor: N-MOSFET
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2+ | 44.53 EUR |
25+ | 43.8 EUR |
30+ | 43.41 EUR |
MSC025SMA120B |
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Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 73A; Idm: 275A; 500W
Polarisation: unipolar
Drain-source voltage: 1.2kV
Power dissipation: 500W
Case: TO247-3
Mounting: THT
Gate charge: 232nC
Technology: SiC
Kind of channel: enhanced
Drain current: 73A
Pulsed drain current: 275A
On-state resistance: 31mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 73A; Idm: 275A; 500W
Polarisation: unipolar
Drain-source voltage: 1.2kV
Power dissipation: 500W
Case: TO247-3
Mounting: THT
Gate charge: 232nC
Technology: SiC
Kind of channel: enhanced
Drain current: 73A
Pulsed drain current: 275A
On-state resistance: 31mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
auf Bestellung 30 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2+ | 44.53 EUR |
25+ | 43.8 EUR |
30+ | 43.41 EUR |
MSC025SMA120B4 |
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Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 73A; Idm: 275A; 500W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 73A
Pulsed drain current: 275A
Power dissipation: 500W
Case: TO247-4
On-state resistance: 31mΩ
Mounting: THT
Gate charge: 232nC
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 73A; Idm: 275A; 500W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 73A
Pulsed drain current: 275A
Power dissipation: 500W
Case: TO247-4
On-state resistance: 31mΩ
Mounting: THT
Gate charge: 232nC
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
Produkt ist nicht verfügbar
MSC025SMA120B4 |
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Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 73A; Idm: 275A; 500W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 73A
Pulsed drain current: 275A
Power dissipation: 500W
Case: TO247-4
On-state resistance: 31mΩ
Mounting: THT
Gate charge: 232nC
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 73A; Idm: 275A; 500W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 73A
Pulsed drain current: 275A
Power dissipation: 500W
Case: TO247-4
On-state resistance: 31mΩ
Mounting: THT
Gate charge: 232nC
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
MSC025SMA120J |
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Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 54A; SOT227B; screw; Idm: 275A
Technology: SiC
Drain-source voltage: 1.2kV
Drain current: 54A
Pulsed drain current: 275A
Power dissipation: 278W
Case: SOT227B
On-state resistance: 31mΩ
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 54A; SOT227B; screw; Idm: 275A
Technology: SiC
Drain-source voltage: 1.2kV
Drain current: 54A
Pulsed drain current: 275A
Power dissipation: 278W
Case: SOT227B
On-state resistance: 31mΩ
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Produkt ist nicht verfügbar
MSC025SMA120J |
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Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 54A; SOT227B; screw; Idm: 275A
Technology: SiC
Drain-source voltage: 1.2kV
Drain current: 54A
Pulsed drain current: 275A
Power dissipation: 278W
Case: SOT227B
On-state resistance: 31mΩ
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 54A; SOT227B; screw; Idm: 275A
Technology: SiC
Drain-source voltage: 1.2kV
Drain current: 54A
Pulsed drain current: 275A
Power dissipation: 278W
Case: SOT227B
On-state resistance: 31mΩ
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
MSC025SMA120S |
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Hersteller: MICROCHIP (MICROSEMI)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 63A; Idm: 222A; 370W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 63A
Pulsed drain current: 222A
Power dissipation: 370W
Case: D3PAK
On-state resistance: 31mΩ
Mounting: SMD
Gate charge: 232nC
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 63A; Idm: 222A; 370W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 63A
Pulsed drain current: 222A
Power dissipation: 370W
Case: D3PAK
On-state resistance: 31mΩ
Mounting: SMD
Gate charge: 232nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
MSC025SMA120S |
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Hersteller: MICROCHIP (MICROSEMI)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 63A; Idm: 222A; 370W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 63A
Pulsed drain current: 222A
Power dissipation: 370W
Case: D3PAK
On-state resistance: 31mΩ
Mounting: SMD
Gate charge: 232nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 63A; Idm: 222A; 370W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 63A
Pulsed drain current: 222A
Power dissipation: 370W
Case: D3PAK
On-state resistance: 31mΩ
Mounting: SMD
Gate charge: 232nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
MSC030SDA070B |
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Hersteller: MICROCHIP (MICROSEMI)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 700V; 30A; 81W; TO247-2
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 700V
Load current: 30A
Power dissipation: 81W
Semiconductor structure: single diode
Case: TO247-2
Max. forward impulse current: 148A
Max. forward voltage: 1.75V
Leakage current: 10µA
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 700V; 30A; 81W; TO247-2
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 700V
Load current: 30A
Power dissipation: 81W
Semiconductor structure: single diode
Case: TO247-2
Max. forward impulse current: 148A
Max. forward voltage: 1.75V
Leakage current: 10µA
Produkt ist nicht verfügbar
MSC030SDA070B |
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Hersteller: MICROCHIP (MICROSEMI)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 700V; 30A; 81W; TO247-2
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 700V
Load current: 30A
Power dissipation: 81W
Semiconductor structure: single diode
Case: TO247-2
Max. forward impulse current: 148A
Max. forward voltage: 1.75V
Leakage current: 10µA
Anzahl je Verpackung: 1 Stücke
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 700V; 30A; 81W; TO247-2
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 700V
Load current: 30A
Power dissipation: 81W
Semiconductor structure: single diode
Case: TO247-2
Max. forward impulse current: 148A
Max. forward voltage: 1.75V
Leakage current: 10µA
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar