Produkte > MICROCHIP (MICROSEMI) > Alle Produkte des Herstellers MICROCHIP (MICROSEMI) (4150) > Seite 61 nach 70
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MSC030SDA070BCT | MICROCHIP (MICROSEMI) |
![]() Description: Diode: Schottky rectifying; SiC; THT; 700V; 30A; 81W; TO247-3 Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 700V Load current: 30A Power dissipation: 81W Semiconductor structure: common cathode; double Case: TO247-3 Max. forward impulse current: 146A Max. forward voltage: 1.75V Leakage current: 10µA |
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MSC030SDA070BCT | MICROCHIP (MICROSEMI) |
![]() Description: Diode: Schottky rectifying; SiC; THT; 700V; 30A; 81W; TO247-3 Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 700V Load current: 30A Power dissipation: 81W Semiconductor structure: common cathode; double Case: TO247-3 Max. forward impulse current: 146A Max. forward voltage: 1.75V Leakage current: 10µA Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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MSC030SDA070K | MICROCHIP (MICROSEMI) |
![]() Description: Diode: Schottky rectifying; SiC; THT; 700V; 30A; 72W; TO220-2 Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 700V Load current: 30A Power dissipation: 72W Semiconductor structure: single diode Case: TO220-2 Heatsink thickness: 1.14...1.4mm Max. forward impulse current: 146A Max. forward voltage: 1.75V Leakage current: 10µA |
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MSC030SDA070K | MICROCHIP (MICROSEMI) |
![]() Description: Diode: Schottky rectifying; SiC; THT; 700V; 30A; 72W; TO220-2 Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 700V Load current: 30A Power dissipation: 72W Semiconductor structure: single diode Case: TO220-2 Heatsink thickness: 1.14...1.4mm Max. forward impulse current: 146A Max. forward voltage: 1.75V Leakage current: 10µA Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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MSC030SDA070S | MICROCHIP (MICROSEMI) |
![]() Description: Diode: Schottky rectifying; SiC; SMD; 700V; 30A; D3PAK; 81W Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 700V Load current: 30A Semiconductor structure: single diode Max. forward voltage: 1.8V Case: D3PAK Leakage current: 10µA Max. forward impulse current: 146A Power dissipation: 81W |
Produkt ist nicht verfügbar |
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MSC030SDA070S | MICROCHIP (MICROSEMI) |
![]() Description: Diode: Schottky rectifying; SiC; SMD; 700V; 30A; D3PAK; 81W Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 700V Load current: 30A Semiconductor structure: single diode Max. forward voltage: 1.8V Case: D3PAK Leakage current: 10µA Max. forward impulse current: 146A Power dissipation: 81W Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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MSC030SDA120B | MICROCHIP (MICROSEMI) |
![]() Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 30A; 112W; TO247-2 Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 30A Semiconductor structure: single diode Max. forward voltage: 2.1V Case: TO247-2 Leakage current: 0.15mA Max. forward impulse current: 165A Power dissipation: 112W |
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MSC030SDA120B | MICROCHIP (MICROSEMI) |
![]() Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 30A; 112W; TO247-2 Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 30A Semiconductor structure: single diode Max. forward voltage: 2.1V Case: TO247-2 Leakage current: 0.15mA Max. forward impulse current: 165A Power dissipation: 112W Anzahl je Verpackung: 1 Stücke |
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MSC030SDA120BCT | MICROCHIP (MICROSEMI) |
![]() Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 30A; 112W; TO247-3 Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 30A Semiconductor structure: common cathode; double Max. forward voltage: 2.1V Case: TO247-3 Leakage current: 0.15mA Max. forward impulse current: 165A Power dissipation: 112W |
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MSC030SDA120BCT | MICROCHIP (MICROSEMI) |
![]() Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 30A; 112W; TO247-3 Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 30A Semiconductor structure: common cathode; double Max. forward voltage: 2.1V Case: TO247-3 Leakage current: 0.15mA Max. forward impulse current: 165A Power dissipation: 112W Anzahl je Verpackung: 1 Stücke |
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MSC030SDA120K | MICROCHIP (MICROSEMI) |
![]() Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 30A; 130W; TO220-2 Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 30A Semiconductor structure: single diode Max. forward voltage: 2.1V Case: TO220-2 Leakage current: 0.15mA Max. forward impulse current: 165A Power dissipation: 130W Heatsink thickness: 1.14...1.4mm |
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MSC030SDA120K | MICROCHIP (MICROSEMI) |
![]() Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 30A; 130W; TO220-2 Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 30A Semiconductor structure: single diode Max. forward voltage: 2.1V Case: TO220-2 Leakage current: 0.15mA Max. forward impulse current: 165A Power dissipation: 130W Heatsink thickness: 1.14...1.4mm Anzahl je Verpackung: 1 Stücke |
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MSC030SDA120S | MICROCHIP (MICROSEMI) |
![]() Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 30A; D3PAK; 112W Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 1.2kV Load current: 30A Semiconductor structure: single diode Max. forward voltage: 2.1V Case: D3PAK Leakage current: 0.15mA Max. forward impulse current: 165A Power dissipation: 112W |
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MSC030SDA120S | MICROCHIP (MICROSEMI) |
![]() Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 30A; D3PAK; 112W Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 1.2kV Load current: 30A Semiconductor structure: single diode Max. forward voltage: 2.1V Case: D3PAK Leakage current: 0.15mA Max. forward impulse current: 165A Power dissipation: 112W Anzahl je Verpackung: 1 Stücke |
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MSC030SDA170B | MICROCHIP (MICROSEMI) |
![]() Description: Diode: Schottky rectifying; SiC; THT; 1.7kV; 30A; 186W; TO247-2 Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.7kV Load current: 30A Semiconductor structure: single diode Max. forward voltage: 2.25V Case: TO247-2 Leakage current: 125µA Max. forward impulse current: 353A Power dissipation: 186W |
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MSC030SDA170B | MICROCHIP (MICROSEMI) |
![]() Description: Diode: Schottky rectifying; SiC; THT; 1.7kV; 30A; 186W; TO247-2 Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.7kV Load current: 30A Semiconductor structure: single diode Max. forward voltage: 2.25V Case: TO247-2 Leakage current: 125µA Max. forward impulse current: 353A Power dissipation: 186W Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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MSC030SDA330B | MICROCHIP (MICROSEMI) |
![]() Description: Diode: Schottky rectifying; SiC; THT; 3.3kV; 30A; 241W; TO247-2 Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 3.3kV Load current: 30A Semiconductor structure: single diode Max. forward voltage: 4.6V Case: TO247-2 Leakage current: 50µA Max. forward impulse current: 205A Power dissipation: 241W |
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MSC030SDA330B | MICROCHIP (MICROSEMI) |
![]() Description: Diode: Schottky rectifying; SiC; THT; 3.3kV; 30A; 241W; TO247-2 Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 3.3kV Load current: 30A Semiconductor structure: single diode Max. forward voltage: 4.6V Case: TO247-2 Leakage current: 50µA Max. forward impulse current: 205A Power dissipation: 241W Anzahl je Verpackung: 1 Stücke |
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MSC035SMA070B | MICROCHIP (MICROSEMI) |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 700V; 54A; Idm: 192A; 283W Technology: SiC Mounting: THT Case: TO247-3 Power dissipation: 283W Type of transistor: N-MOSFET On-state resistance: 44mΩ Pulsed drain current: 192A Gate charge: 99nC Polarisation: unipolar Drain current: 54A Kind of channel: enhanced Drain-source voltage: 700V |
Produkt ist nicht verfügbar |
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MSC035SMA070B | MICROCHIP (MICROSEMI) |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 700V; 54A; Idm: 192A; 283W Technology: SiC Mounting: THT Case: TO247-3 Power dissipation: 283W Type of transistor: N-MOSFET On-state resistance: 44mΩ Pulsed drain current: 192A Gate charge: 99nC Polarisation: unipolar Drain current: 54A Kind of channel: enhanced Drain-source voltage: 700V Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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MSC035SMA070B4 | MICROCHIP (MICROSEMI) |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 700V; 54A; Idm: 192A; 283W Polarisation: unipolar Drain-source voltage: 700V Power dissipation: 283W Case: TO247-4 Mounting: THT Features of semiconductor devices: Kelvin terminal Gate charge: 99nC Technology: SiC Kind of channel: enhanced Drain current: 54A Pulsed drain current: 192A On-state resistance: 44mΩ Type of transistor: N-MOSFET |
auf Bestellung 22 Stücke: Lieferzeit 14-21 Tag (e) |
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MSC035SMA070B4 | MICROCHIP (MICROSEMI) |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 700V; 54A; Idm: 192A; 283W Polarisation: unipolar Drain-source voltage: 700V Power dissipation: 283W Case: TO247-4 Mounting: THT Features of semiconductor devices: Kelvin terminal Gate charge: 99nC Technology: SiC Kind of channel: enhanced Drain current: 54A Pulsed drain current: 192A On-state resistance: 44mΩ Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke |
auf Bestellung 22 Stücke: Lieferzeit 7-14 Tag (e) |
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MSC035SMA070S | MICROCHIP (MICROSEMI) |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 700V; 46A; Idm: 163A; 206W Polarisation: unipolar Drain-source voltage: 700V Power dissipation: 206W Case: D3PAK Mounting: SMD Gate charge: 99nC Technology: SiC Kind of channel: enhanced Drain current: 46A Pulsed drain current: 163A On-state resistance: 44mΩ Type of transistor: N-MOSFET |
auf Bestellung 27 Stücke: Lieferzeit 14-21 Tag (e) |
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MSC035SMA070S | MICROCHIP (MICROSEMI) |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 700V; 46A; Idm: 163A; 206W Polarisation: unipolar Drain-source voltage: 700V Power dissipation: 206W Case: D3PAK Mounting: SMD Gate charge: 99nC Technology: SiC Kind of channel: enhanced Drain current: 46A Pulsed drain current: 163A On-state resistance: 44mΩ Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke |
auf Bestellung 27 Stücke: Lieferzeit 7-14 Tag (e) |
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MSC035SMA170B | MICROCHIP (MICROSEMI) |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 48A; Idm: 200A; 370W Technology: SiC Mounting: THT Case: TO247-3 Power dissipation: 370W Type of transistor: N-MOSFET On-state resistance: 45mΩ Pulsed drain current: 200A Gate charge: 178nC Polarisation: unipolar Drain current: 48A Kind of channel: enhanced Drain-source voltage: 1.7kV |
Produkt ist nicht verfügbar |
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MSC035SMA170B | MICROCHIP (MICROSEMI) |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 48A; Idm: 200A; 370W Technology: SiC Mounting: THT Case: TO247-3 Power dissipation: 370W Type of transistor: N-MOSFET On-state resistance: 45mΩ Pulsed drain current: 200A Gate charge: 178nC Polarisation: unipolar Drain current: 48A Kind of channel: enhanced Drain-source voltage: 1.7kV Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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MSC035SMA170B4 | MICROCHIP (MICROSEMI) |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 48A; Idm: 200A; 370W Mounting: THT Case: TO247-4 Power dissipation: 370W Polarisation: unipolar Features of semiconductor devices: Kelvin terminal Gate charge: 178nC Technology: SiC Kind of channel: enhanced Pulsed drain current: 200A Drain-source voltage: 1.7kV Drain current: 48A On-state resistance: 45mΩ Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |
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MSC035SMA170B4 | MICROCHIP (MICROSEMI) |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 48A; Idm: 200A; 370W Mounting: THT Case: TO247-4 Power dissipation: 370W Polarisation: unipolar Features of semiconductor devices: Kelvin terminal Gate charge: 178nC Technology: SiC Kind of channel: enhanced Pulsed drain current: 200A Drain-source voltage: 1.7kV Drain current: 48A On-state resistance: 45mΩ Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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MSC040SMA120B | MICROCHIP (MICROSEMI) |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 46A; Idm: 105A; 323W Power dissipation: 323W Mounting: THT Case: TO247-3 Gate charge: 137nC Technology: SiC Kind of channel: enhanced Pulsed drain current: 105A Drain-source voltage: 1.2kV Drain current: 46A On-state resistance: 50mΩ Type of transistor: N-MOSFET Polarisation: unipolar |
Produkt ist nicht verfügbar |
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MSC040SMA120B | MICROCHIP (MICROSEMI) |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 46A; Idm: 105A; 323W Power dissipation: 323W Mounting: THT Case: TO247-3 Gate charge: 137nC Technology: SiC Kind of channel: enhanced Pulsed drain current: 105A Drain-source voltage: 1.2kV Drain current: 46A On-state resistance: 50mΩ Type of transistor: N-MOSFET Polarisation: unipolar Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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MSC040SMA120B4 | MICROCHIP (MICROSEMI) |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 46A; Idm: 105A; 323W Polarisation: unipolar Drain-source voltage: 1.2kV Power dissipation: 323W Case: TO247-4 Mounting: THT Features of semiconductor devices: Kelvin terminal Gate charge: 137nC Technology: SiC Kind of channel: enhanced Drain current: 46A Pulsed drain current: 105A On-state resistance: 50mΩ Type of transistor: N-MOSFET |
auf Bestellung 30 Stücke: Lieferzeit 14-21 Tag (e) |
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MSC040SMA120B4 | MICROCHIP (MICROSEMI) |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 46A; Idm: 105A; 323W Polarisation: unipolar Drain-source voltage: 1.2kV Power dissipation: 323W Case: TO247-4 Mounting: THT Features of semiconductor devices: Kelvin terminal Gate charge: 137nC Technology: SiC Kind of channel: enhanced Drain current: 46A Pulsed drain current: 105A On-state resistance: 50mΩ Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke |
auf Bestellung 30 Stücke: Lieferzeit 7-14 Tag (e) |
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MSC040SMA120J | MICROCHIP (MICROSEMI) |
![]() Description: Module; single transistor; 1.2kV; 37A; SOT227B; screw; Idm: 105A Power dissipation: 208W Case: SOT227B Semiconductor structure: single transistor Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor Technology: SiC Pulsed drain current: 105A Drain-source voltage: 1.2kV Drain current: 37A On-state resistance: 50mΩ |
Produkt ist nicht verfügbar |
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MSC040SMA120J | MICROCHIP (MICROSEMI) |
![]() Description: Module; single transistor; 1.2kV; 37A; SOT227B; screw; Idm: 105A Power dissipation: 208W Case: SOT227B Semiconductor structure: single transistor Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor Technology: SiC Pulsed drain current: 105A Drain-source voltage: 1.2kV Drain current: 37A On-state resistance: 50mΩ Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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MSC040SMA120S | MICROCHIP (MICROSEMI) |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 45A; Idm: 159A; 303W Power dissipation: 303W Mounting: SMD Case: D3PAK Gate charge: 137nC Technology: SiC Kind of channel: enhanced Pulsed drain current: 159A Drain-source voltage: 1.2kV Drain current: 45A On-state resistance: 50mΩ Type of transistor: N-MOSFET Polarisation: unipolar |
Produkt ist nicht verfügbar |
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MSC040SMA120S | MICROCHIP (MICROSEMI) |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 45A; Idm: 159A; 303W Power dissipation: 303W Mounting: SMD Case: D3PAK Gate charge: 137nC Technology: SiC Kind of channel: enhanced Pulsed drain current: 159A Drain-source voltage: 1.2kV Drain current: 45A On-state resistance: 50mΩ Type of transistor: N-MOSFET Polarisation: unipolar Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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MSC050SDA070B | MICROCHIP (MICROSEMI) |
![]() Description: Diode: Schottky rectifying; SiC; THT; 700V; 50A; 123W; TO247-2 Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 700V Load current: 50A Semiconductor structure: single diode Max. forward voltage: 1.9V Case: TO247-2 Leakage current: 0.25mA Max. forward impulse current: 124A Power dissipation: 123W |
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MSC050SDA070B | MICROCHIP (MICROSEMI) |
![]() Description: Diode: Schottky rectifying; SiC; THT; 700V; 50A; 123W; TO247-2 Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 700V Load current: 50A Semiconductor structure: single diode Max. forward voltage: 1.9V Case: TO247-2 Leakage current: 0.25mA Max. forward impulse current: 124A Power dissipation: 123W Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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MSC050SDA070BCT | MICROCHIP (MICROSEMI) |
![]() Description: Diode: Schottky rectifying; SiC; THT; 700V; 50A; 123W; TO247-3 Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 700V Load current: 50A Semiconductor structure: common cathode; double Max. forward voltage: 1.9V Case: TO247-3 Leakage current: 0.25mA Max. forward impulse current: 124A Power dissipation: 123W |
Produkt ist nicht verfügbar |
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MSC050SDA070BCT | MICROCHIP (MICROSEMI) |
![]() Description: Diode: Schottky rectifying; SiC; THT; 700V; 50A; 123W; TO247-3 Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 700V Load current: 50A Semiconductor structure: common cathode; double Max. forward voltage: 1.9V Case: TO247-3 Leakage current: 0.25mA Max. forward impulse current: 124A Power dissipation: 123W Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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MSC050SDA070S | MICROCHIP (MICROSEMI) |
![]() Description: Diode: Schottky rectifying; SiC; SMD; 700V; 50A; D3PAK; 123W Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 700V Load current: 50A Semiconductor structure: single diode Max. forward voltage: 1.9V Case: D3PAK Leakage current: 0.25mA Max. forward impulse current: 124A Power dissipation: 123W |
Produkt ist nicht verfügbar |
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MSC050SDA070S | MICROCHIP (MICROSEMI) |
![]() Description: Diode: Schottky rectifying; SiC; SMD; 700V; 50A; D3PAK; 123W Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 700V Load current: 50A Semiconductor structure: single diode Max. forward voltage: 1.9V Case: D3PAK Leakage current: 0.25mA Max. forward impulse current: 124A Power dissipation: 123W Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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MSC050SDA120B | MICROCHIP (MICROSEMI) |
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MSC050SDA120BCT | MICROCHIP (MICROSEMI) |
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MSC050SDA120S | MICROCHIP (MICROSEMI) |
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MSC050SDA170B | MICROCHIP (MICROSEMI) |
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MSC060SMA070B | MICROCHIP (MICROSEMI) |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 700V; 28A; Idm: 100A; 143W Polarisation: unipolar Drain-source voltage: 700V Power dissipation: 143W Case: TO247-3 Mounting: THT Gate charge: 56nC Technology: SiC Kind of channel: enhanced Drain current: 28A Pulsed drain current: 100A On-state resistance: 75mΩ Type of transistor: N-MOSFET |
auf Bestellung 23 Stücke: Lieferzeit 14-21 Tag (e) |
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MSC060SMA070B | MICROCHIP (MICROSEMI) |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 700V; 28A; Idm: 100A; 143W Polarisation: unipolar Drain-source voltage: 700V Power dissipation: 143W Case: TO247-3 Mounting: THT Gate charge: 56nC Technology: SiC Kind of channel: enhanced Drain current: 28A Pulsed drain current: 100A On-state resistance: 75mΩ Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke |
auf Bestellung 23 Stücke: Lieferzeit 7-14 Tag (e) |
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MSC060SMA070B4 | MICROCHIP (MICROSEMI) |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 700V; 28A; Idm: 100A; 143W Polarisation: unipolar Drain-source voltage: 700V Power dissipation: 143W Case: TO247-4 Mounting: THT Features of semiconductor devices: Kelvin terminal Gate charge: 56nC Technology: SiC Kind of channel: enhanced Drain current: 28A Pulsed drain current: 100A On-state resistance: 75mΩ Type of transistor: N-MOSFET |
auf Bestellung 46 Stücke: Lieferzeit 14-21 Tag (e) |
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MSC060SMA070B4 | MICROCHIP (MICROSEMI) |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 700V; 28A; Idm: 100A; 143W Polarisation: unipolar Drain-source voltage: 700V Power dissipation: 143W Case: TO247-4 Mounting: THT Features of semiconductor devices: Kelvin terminal Gate charge: 56nC Technology: SiC Kind of channel: enhanced Drain current: 28A Pulsed drain current: 100A On-state resistance: 75mΩ Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke |
auf Bestellung 46 Stücke: Lieferzeit 7-14 Tag (e) |
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MSC060SMA070S | MICROCHIP (MICROSEMI) |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 700V; 26A; Idm: 93A; 130W; D3PAK Polarisation: unipolar Drain-source voltage: 700V Power dissipation: 130W Case: D3PAK Mounting: SMD Gate charge: 56nC Technology: SiC Kind of channel: enhanced Drain current: 26A Pulsed drain current: 93A On-state resistance: 75mΩ Type of transistor: N-MOSFET |
auf Bestellung 50 Stücke: Lieferzeit 14-21 Tag (e) |
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MSC060SMA070S | MICROCHIP (MICROSEMI) |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 700V; 26A; Idm: 93A; 130W; D3PAK Polarisation: unipolar Drain-source voltage: 700V Power dissipation: 130W Case: D3PAK Mounting: SMD Gate charge: 56nC Technology: SiC Kind of channel: enhanced Drain current: 26A Pulsed drain current: 93A On-state resistance: 75mΩ Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke |
auf Bestellung 50 Stücke: Lieferzeit 7-14 Tag (e) |
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MSC080SMA120B | MICROCHIP (MICROSEMI) |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 26A; Idm: 91A; 200W Polarisation: unipolar Drain-source voltage: 1.2kV Power dissipation: 200W Case: TO247-3 Mounting: THT Gate charge: 64nC Technology: SiC Kind of channel: enhanced Drain current: 26A Pulsed drain current: 91A On-state resistance: 0.1Ω Type of transistor: N-MOSFET |
auf Bestellung 6 Stücke: Lieferzeit 14-21 Tag (e) |
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MSC080SMA120B | MICROCHIP (MICROSEMI) |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 26A; Idm: 91A; 200W Polarisation: unipolar Drain-source voltage: 1.2kV Power dissipation: 200W Case: TO247-3 Mounting: THT Gate charge: 64nC Technology: SiC Kind of channel: enhanced Drain current: 26A Pulsed drain current: 91A On-state resistance: 0.1Ω Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke |
auf Bestellung 6 Stücke: Lieferzeit 7-14 Tag (e) |
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MSC080SMA120B4 | MICROCHIP (MICROSEMI) |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 26A; Idm: 90A; 200W Polarisation: unipolar Drain-source voltage: 1.2kV Power dissipation: 200W Case: TO247-4 Mounting: THT Features of semiconductor devices: Kelvin terminal Gate charge: 64nC Technology: SiC Kind of channel: enhanced Drain current: 26A Pulsed drain current: 90A On-state resistance: 0.1Ω Type of transistor: N-MOSFET |
auf Bestellung 35 Stücke: Lieferzeit 14-21 Tag (e) |
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MSC080SMA120B4 | MICROCHIP (MICROSEMI) |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 26A; Idm: 90A; 200W Polarisation: unipolar Drain-source voltage: 1.2kV Power dissipation: 200W Case: TO247-4 Mounting: THT Features of semiconductor devices: Kelvin terminal Gate charge: 64nC Technology: SiC Kind of channel: enhanced Drain current: 26A Pulsed drain current: 90A On-state resistance: 0.1Ω Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke |
auf Bestellung 35 Stücke: Lieferzeit 7-14 Tag (e) |
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MSC080SMA120J | MICROCHIP (MICROSEMI) |
![]() Description: Module; single transistor; 1.2kV; 26A; SOT227B; screw; Idm: 91A Semiconductor structure: single transistor Drain-source voltage: 1.2kV Drain current: 26A On-state resistance: 0.1Ω Power dissipation: 200W Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor Technology: SiC Pulsed drain current: 91A Case: SOT227B |
Produkt ist nicht verfügbar |
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MSC080SMA120J | MICROCHIP (MICROSEMI) |
![]() Description: Module; single transistor; 1.2kV; 26A; SOT227B; screw; Idm: 91A Semiconductor structure: single transistor Drain-source voltage: 1.2kV Drain current: 26A On-state resistance: 0.1Ω Power dissipation: 200W Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor Technology: SiC Pulsed drain current: 91A Case: SOT227B Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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MSC080SMA120S | MICROCHIP (MICROSEMI) |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 25A; Idm: 87A; 182W Drain-source voltage: 1.2kV Drain current: 25A On-state resistance: 0.1Ω Type of transistor: N-MOSFET Power dissipation: 182W Polarisation: unipolar Gate charge: 64nC Technology: SiC Kind of channel: enhanced Pulsed drain current: 87A Mounting: SMD Case: D3PAK |
Produkt ist nicht verfügbar |
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MSC080SMA120S | MICROCHIP (MICROSEMI) |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 25A; Idm: 87A; 182W Drain-source voltage: 1.2kV Drain current: 25A On-state resistance: 0.1Ω Type of transistor: N-MOSFET Power dissipation: 182W Polarisation: unipolar Gate charge: 64nC Technology: SiC Kind of channel: enhanced Pulsed drain current: 87A Mounting: SMD Case: D3PAK Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
MSC030SDA070BCT |
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Hersteller: MICROCHIP (MICROSEMI)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 700V; 30A; 81W; TO247-3
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 700V
Load current: 30A
Power dissipation: 81W
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward impulse current: 146A
Max. forward voltage: 1.75V
Leakage current: 10µA
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 700V; 30A; 81W; TO247-3
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 700V
Load current: 30A
Power dissipation: 81W
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward impulse current: 146A
Max. forward voltage: 1.75V
Leakage current: 10µA
Produkt ist nicht verfügbar
MSC030SDA070BCT |
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Hersteller: MICROCHIP (MICROSEMI)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 700V; 30A; 81W; TO247-3
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 700V
Load current: 30A
Power dissipation: 81W
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward impulse current: 146A
Max. forward voltage: 1.75V
Leakage current: 10µA
Anzahl je Verpackung: 1 Stücke
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 700V; 30A; 81W; TO247-3
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 700V
Load current: 30A
Power dissipation: 81W
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward impulse current: 146A
Max. forward voltage: 1.75V
Leakage current: 10µA
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
MSC030SDA070K |
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Hersteller: MICROCHIP (MICROSEMI)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 700V; 30A; 72W; TO220-2
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 700V
Load current: 30A
Power dissipation: 72W
Semiconductor structure: single diode
Case: TO220-2
Heatsink thickness: 1.14...1.4mm
Max. forward impulse current: 146A
Max. forward voltage: 1.75V
Leakage current: 10µA
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 700V; 30A; 72W; TO220-2
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 700V
Load current: 30A
Power dissipation: 72W
Semiconductor structure: single diode
Case: TO220-2
Heatsink thickness: 1.14...1.4mm
Max. forward impulse current: 146A
Max. forward voltage: 1.75V
Leakage current: 10µA
Produkt ist nicht verfügbar
MSC030SDA070K |
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Hersteller: MICROCHIP (MICROSEMI)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 700V; 30A; 72W; TO220-2
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 700V
Load current: 30A
Power dissipation: 72W
Semiconductor structure: single diode
Case: TO220-2
Heatsink thickness: 1.14...1.4mm
Max. forward impulse current: 146A
Max. forward voltage: 1.75V
Leakage current: 10µA
Anzahl je Verpackung: 1 Stücke
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 700V; 30A; 72W; TO220-2
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 700V
Load current: 30A
Power dissipation: 72W
Semiconductor structure: single diode
Case: TO220-2
Heatsink thickness: 1.14...1.4mm
Max. forward impulse current: 146A
Max. forward voltage: 1.75V
Leakage current: 10µA
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
MSC030SDA070S |
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Hersteller: MICROCHIP (MICROSEMI)
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 700V; 30A; D3PAK; 81W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 700V
Load current: 30A
Semiconductor structure: single diode
Max. forward voltage: 1.8V
Case: D3PAK
Leakage current: 10µA
Max. forward impulse current: 146A
Power dissipation: 81W
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 700V; 30A; D3PAK; 81W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 700V
Load current: 30A
Semiconductor structure: single diode
Max. forward voltage: 1.8V
Case: D3PAK
Leakage current: 10µA
Max. forward impulse current: 146A
Power dissipation: 81W
Produkt ist nicht verfügbar
MSC030SDA070S |
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Hersteller: MICROCHIP (MICROSEMI)
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 700V; 30A; D3PAK; 81W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 700V
Load current: 30A
Semiconductor structure: single diode
Max. forward voltage: 1.8V
Case: D3PAK
Leakage current: 10µA
Max. forward impulse current: 146A
Power dissipation: 81W
Anzahl je Verpackung: 1 Stücke
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 700V; 30A; D3PAK; 81W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 700V
Load current: 30A
Semiconductor structure: single diode
Max. forward voltage: 1.8V
Case: D3PAK
Leakage current: 10µA
Max. forward impulse current: 146A
Power dissipation: 81W
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
MSC030SDA120B |
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Hersteller: MICROCHIP (MICROSEMI)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 30A; 112W; TO247-2
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 30A
Semiconductor structure: single diode
Max. forward voltage: 2.1V
Case: TO247-2
Leakage current: 0.15mA
Max. forward impulse current: 165A
Power dissipation: 112W
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 30A; 112W; TO247-2
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 30A
Semiconductor structure: single diode
Max. forward voltage: 2.1V
Case: TO247-2
Leakage current: 0.15mA
Max. forward impulse current: 165A
Power dissipation: 112W
Produkt ist nicht verfügbar
MSC030SDA120B |
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Hersteller: MICROCHIP (MICROSEMI)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 30A; 112W; TO247-2
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 30A
Semiconductor structure: single diode
Max. forward voltage: 2.1V
Case: TO247-2
Leakage current: 0.15mA
Max. forward impulse current: 165A
Power dissipation: 112W
Anzahl je Verpackung: 1 Stücke
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 30A; 112W; TO247-2
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 30A
Semiconductor structure: single diode
Max. forward voltage: 2.1V
Case: TO247-2
Leakage current: 0.15mA
Max. forward impulse current: 165A
Power dissipation: 112W
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
MSC030SDA120BCT |
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Hersteller: MICROCHIP (MICROSEMI)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 30A; 112W; TO247-3
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 30A
Semiconductor structure: common cathode; double
Max. forward voltage: 2.1V
Case: TO247-3
Leakage current: 0.15mA
Max. forward impulse current: 165A
Power dissipation: 112W
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 30A; 112W; TO247-3
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 30A
Semiconductor structure: common cathode; double
Max. forward voltage: 2.1V
Case: TO247-3
Leakage current: 0.15mA
Max. forward impulse current: 165A
Power dissipation: 112W
Produkt ist nicht verfügbar
MSC030SDA120BCT |
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Hersteller: MICROCHIP (MICROSEMI)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 30A; 112W; TO247-3
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 30A
Semiconductor structure: common cathode; double
Max. forward voltage: 2.1V
Case: TO247-3
Leakage current: 0.15mA
Max. forward impulse current: 165A
Power dissipation: 112W
Anzahl je Verpackung: 1 Stücke
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 30A; 112W; TO247-3
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 30A
Semiconductor structure: common cathode; double
Max. forward voltage: 2.1V
Case: TO247-3
Leakage current: 0.15mA
Max. forward impulse current: 165A
Power dissipation: 112W
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
MSC030SDA120K |
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Hersteller: MICROCHIP (MICROSEMI)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 30A; 130W; TO220-2
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 30A
Semiconductor structure: single diode
Max. forward voltage: 2.1V
Case: TO220-2
Leakage current: 0.15mA
Max. forward impulse current: 165A
Power dissipation: 130W
Heatsink thickness: 1.14...1.4mm
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 30A; 130W; TO220-2
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 30A
Semiconductor structure: single diode
Max. forward voltage: 2.1V
Case: TO220-2
Leakage current: 0.15mA
Max. forward impulse current: 165A
Power dissipation: 130W
Heatsink thickness: 1.14...1.4mm
Produkt ist nicht verfügbar
MSC030SDA120K |
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Hersteller: MICROCHIP (MICROSEMI)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 30A; 130W; TO220-2
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 30A
Semiconductor structure: single diode
Max. forward voltage: 2.1V
Case: TO220-2
Leakage current: 0.15mA
Max. forward impulse current: 165A
Power dissipation: 130W
Heatsink thickness: 1.14...1.4mm
Anzahl je Verpackung: 1 Stücke
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 30A; 130W; TO220-2
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 30A
Semiconductor structure: single diode
Max. forward voltage: 2.1V
Case: TO220-2
Leakage current: 0.15mA
Max. forward impulse current: 165A
Power dissipation: 130W
Heatsink thickness: 1.14...1.4mm
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
MSC030SDA120S |
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Hersteller: MICROCHIP (MICROSEMI)
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 30A; D3PAK; 112W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 30A
Semiconductor structure: single diode
Max. forward voltage: 2.1V
Case: D3PAK
Leakage current: 0.15mA
Max. forward impulse current: 165A
Power dissipation: 112W
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 30A; D3PAK; 112W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 30A
Semiconductor structure: single diode
Max. forward voltage: 2.1V
Case: D3PAK
Leakage current: 0.15mA
Max. forward impulse current: 165A
Power dissipation: 112W
Produkt ist nicht verfügbar
MSC030SDA120S |
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Hersteller: MICROCHIP (MICROSEMI)
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 30A; D3PAK; 112W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 30A
Semiconductor structure: single diode
Max. forward voltage: 2.1V
Case: D3PAK
Leakage current: 0.15mA
Max. forward impulse current: 165A
Power dissipation: 112W
Anzahl je Verpackung: 1 Stücke
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 30A; D3PAK; 112W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 30A
Semiconductor structure: single diode
Max. forward voltage: 2.1V
Case: D3PAK
Leakage current: 0.15mA
Max. forward impulse current: 165A
Power dissipation: 112W
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
MSC030SDA170B |
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Hersteller: MICROCHIP (MICROSEMI)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.7kV; 30A; 186W; TO247-2
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.7kV
Load current: 30A
Semiconductor structure: single diode
Max. forward voltage: 2.25V
Case: TO247-2
Leakage current: 125µA
Max. forward impulse current: 353A
Power dissipation: 186W
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.7kV; 30A; 186W; TO247-2
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.7kV
Load current: 30A
Semiconductor structure: single diode
Max. forward voltage: 2.25V
Case: TO247-2
Leakage current: 125µA
Max. forward impulse current: 353A
Power dissipation: 186W
Produkt ist nicht verfügbar
MSC030SDA170B |
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Hersteller: MICROCHIP (MICROSEMI)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.7kV; 30A; 186W; TO247-2
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.7kV
Load current: 30A
Semiconductor structure: single diode
Max. forward voltage: 2.25V
Case: TO247-2
Leakage current: 125µA
Max. forward impulse current: 353A
Power dissipation: 186W
Anzahl je Verpackung: 1 Stücke
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.7kV; 30A; 186W; TO247-2
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.7kV
Load current: 30A
Semiconductor structure: single diode
Max. forward voltage: 2.25V
Case: TO247-2
Leakage current: 125µA
Max. forward impulse current: 353A
Power dissipation: 186W
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
MSC030SDA330B |
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Hersteller: MICROCHIP (MICROSEMI)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 3.3kV; 30A; 241W; TO247-2
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 3.3kV
Load current: 30A
Semiconductor structure: single diode
Max. forward voltage: 4.6V
Case: TO247-2
Leakage current: 50µA
Max. forward impulse current: 205A
Power dissipation: 241W
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 3.3kV; 30A; 241W; TO247-2
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 3.3kV
Load current: 30A
Semiconductor structure: single diode
Max. forward voltage: 4.6V
Case: TO247-2
Leakage current: 50µA
Max. forward impulse current: 205A
Power dissipation: 241W
Produkt ist nicht verfügbar
MSC030SDA330B |
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Hersteller: MICROCHIP (MICROSEMI)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 3.3kV; 30A; 241W; TO247-2
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 3.3kV
Load current: 30A
Semiconductor structure: single diode
Max. forward voltage: 4.6V
Case: TO247-2
Leakage current: 50µA
Max. forward impulse current: 205A
Power dissipation: 241W
Anzahl je Verpackung: 1 Stücke
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 3.3kV; 30A; 241W; TO247-2
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 3.3kV
Load current: 30A
Semiconductor structure: single diode
Max. forward voltage: 4.6V
Case: TO247-2
Leakage current: 50µA
Max. forward impulse current: 205A
Power dissipation: 241W
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
MSC035SMA070B |
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Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 700V; 54A; Idm: 192A; 283W
Technology: SiC
Mounting: THT
Case: TO247-3
Power dissipation: 283W
Type of transistor: N-MOSFET
On-state resistance: 44mΩ
Pulsed drain current: 192A
Gate charge: 99nC
Polarisation: unipolar
Drain current: 54A
Kind of channel: enhanced
Drain-source voltage: 700V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 700V; 54A; Idm: 192A; 283W
Technology: SiC
Mounting: THT
Case: TO247-3
Power dissipation: 283W
Type of transistor: N-MOSFET
On-state resistance: 44mΩ
Pulsed drain current: 192A
Gate charge: 99nC
Polarisation: unipolar
Drain current: 54A
Kind of channel: enhanced
Drain-source voltage: 700V
Produkt ist nicht verfügbar
MSC035SMA070B |
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Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 700V; 54A; Idm: 192A; 283W
Technology: SiC
Mounting: THT
Case: TO247-3
Power dissipation: 283W
Type of transistor: N-MOSFET
On-state resistance: 44mΩ
Pulsed drain current: 192A
Gate charge: 99nC
Polarisation: unipolar
Drain current: 54A
Kind of channel: enhanced
Drain-source voltage: 700V
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 700V; 54A; Idm: 192A; 283W
Technology: SiC
Mounting: THT
Case: TO247-3
Power dissipation: 283W
Type of transistor: N-MOSFET
On-state resistance: 44mΩ
Pulsed drain current: 192A
Gate charge: 99nC
Polarisation: unipolar
Drain current: 54A
Kind of channel: enhanced
Drain-source voltage: 700V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
MSC035SMA070B4 |
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Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 700V; 54A; Idm: 192A; 283W
Polarisation: unipolar
Drain-source voltage: 700V
Power dissipation: 283W
Case: TO247-4
Mounting: THT
Features of semiconductor devices: Kelvin terminal
Gate charge: 99nC
Technology: SiC
Kind of channel: enhanced
Drain current: 54A
Pulsed drain current: 192A
On-state resistance: 44mΩ
Type of transistor: N-MOSFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 700V; 54A; Idm: 192A; 283W
Polarisation: unipolar
Drain-source voltage: 700V
Power dissipation: 283W
Case: TO247-4
Mounting: THT
Features of semiconductor devices: Kelvin terminal
Gate charge: 99nC
Technology: SiC
Kind of channel: enhanced
Drain current: 54A
Pulsed drain current: 192A
On-state resistance: 44mΩ
Type of transistor: N-MOSFET
auf Bestellung 22 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3+ | 24.58 EUR |
4+ | 22.57 EUR |
10+ | 22.24 EUR |
MSC035SMA070B4 |
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Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 700V; 54A; Idm: 192A; 283W
Polarisation: unipolar
Drain-source voltage: 700V
Power dissipation: 283W
Case: TO247-4
Mounting: THT
Features of semiconductor devices: Kelvin terminal
Gate charge: 99nC
Technology: SiC
Kind of channel: enhanced
Drain current: 54A
Pulsed drain current: 192A
On-state resistance: 44mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 700V; 54A; Idm: 192A; 283W
Polarisation: unipolar
Drain-source voltage: 700V
Power dissipation: 283W
Case: TO247-4
Mounting: THT
Features of semiconductor devices: Kelvin terminal
Gate charge: 99nC
Technology: SiC
Kind of channel: enhanced
Drain current: 54A
Pulsed drain current: 192A
On-state resistance: 44mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
auf Bestellung 22 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3+ | 24.58 EUR |
4+ | 22.57 EUR |
10+ | 22.24 EUR |
MSC035SMA070S |
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Hersteller: MICROCHIP (MICROSEMI)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 700V; 46A; Idm: 163A; 206W
Polarisation: unipolar
Drain-source voltage: 700V
Power dissipation: 206W
Case: D3PAK
Mounting: SMD
Gate charge: 99nC
Technology: SiC
Kind of channel: enhanced
Drain current: 46A
Pulsed drain current: 163A
On-state resistance: 44mΩ
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 700V; 46A; Idm: 163A; 206W
Polarisation: unipolar
Drain-source voltage: 700V
Power dissipation: 206W
Case: D3PAK
Mounting: SMD
Gate charge: 99nC
Technology: SiC
Kind of channel: enhanced
Drain current: 46A
Pulsed drain current: 163A
On-state resistance: 44mΩ
Type of transistor: N-MOSFET
auf Bestellung 27 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
4+ | 18.52 EUR |
5+ | 17.5 EUR |
MSC035SMA070S |
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Hersteller: MICROCHIP (MICROSEMI)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 700V; 46A; Idm: 163A; 206W
Polarisation: unipolar
Drain-source voltage: 700V
Power dissipation: 206W
Case: D3PAK
Mounting: SMD
Gate charge: 99nC
Technology: SiC
Kind of channel: enhanced
Drain current: 46A
Pulsed drain current: 163A
On-state resistance: 44mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 700V; 46A; Idm: 163A; 206W
Polarisation: unipolar
Drain-source voltage: 700V
Power dissipation: 206W
Case: D3PAK
Mounting: SMD
Gate charge: 99nC
Technology: SiC
Kind of channel: enhanced
Drain current: 46A
Pulsed drain current: 163A
On-state resistance: 44mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
auf Bestellung 27 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
4+ | 18.52 EUR |
5+ | 17.5 EUR |
MSC035SMA170B |
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Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 48A; Idm: 200A; 370W
Technology: SiC
Mounting: THT
Case: TO247-3
Power dissipation: 370W
Type of transistor: N-MOSFET
On-state resistance: 45mΩ
Pulsed drain current: 200A
Gate charge: 178nC
Polarisation: unipolar
Drain current: 48A
Kind of channel: enhanced
Drain-source voltage: 1.7kV
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 48A; Idm: 200A; 370W
Technology: SiC
Mounting: THT
Case: TO247-3
Power dissipation: 370W
Type of transistor: N-MOSFET
On-state resistance: 45mΩ
Pulsed drain current: 200A
Gate charge: 178nC
Polarisation: unipolar
Drain current: 48A
Kind of channel: enhanced
Drain-source voltage: 1.7kV
Produkt ist nicht verfügbar
MSC035SMA170B |
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Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 48A; Idm: 200A; 370W
Technology: SiC
Mounting: THT
Case: TO247-3
Power dissipation: 370W
Type of transistor: N-MOSFET
On-state resistance: 45mΩ
Pulsed drain current: 200A
Gate charge: 178nC
Polarisation: unipolar
Drain current: 48A
Kind of channel: enhanced
Drain-source voltage: 1.7kV
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 48A; Idm: 200A; 370W
Technology: SiC
Mounting: THT
Case: TO247-3
Power dissipation: 370W
Type of transistor: N-MOSFET
On-state resistance: 45mΩ
Pulsed drain current: 200A
Gate charge: 178nC
Polarisation: unipolar
Drain current: 48A
Kind of channel: enhanced
Drain-source voltage: 1.7kV
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
MSC035SMA170B4 |
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Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 48A; Idm: 200A; 370W
Mounting: THT
Case: TO247-4
Power dissipation: 370W
Polarisation: unipolar
Features of semiconductor devices: Kelvin terminal
Gate charge: 178nC
Technology: SiC
Kind of channel: enhanced
Pulsed drain current: 200A
Drain-source voltage: 1.7kV
Drain current: 48A
On-state resistance: 45mΩ
Type of transistor: N-MOSFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 48A; Idm: 200A; 370W
Mounting: THT
Case: TO247-4
Power dissipation: 370W
Polarisation: unipolar
Features of semiconductor devices: Kelvin terminal
Gate charge: 178nC
Technology: SiC
Kind of channel: enhanced
Pulsed drain current: 200A
Drain-source voltage: 1.7kV
Drain current: 48A
On-state resistance: 45mΩ
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
MSC035SMA170B4 |
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Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 48A; Idm: 200A; 370W
Mounting: THT
Case: TO247-4
Power dissipation: 370W
Polarisation: unipolar
Features of semiconductor devices: Kelvin terminal
Gate charge: 178nC
Technology: SiC
Kind of channel: enhanced
Pulsed drain current: 200A
Drain-source voltage: 1.7kV
Drain current: 48A
On-state resistance: 45mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 48A; Idm: 200A; 370W
Mounting: THT
Case: TO247-4
Power dissipation: 370W
Polarisation: unipolar
Features of semiconductor devices: Kelvin terminal
Gate charge: 178nC
Technology: SiC
Kind of channel: enhanced
Pulsed drain current: 200A
Drain-source voltage: 1.7kV
Drain current: 48A
On-state resistance: 45mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
MSC040SMA120B |
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Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 46A; Idm: 105A; 323W
Power dissipation: 323W
Mounting: THT
Case: TO247-3
Gate charge: 137nC
Technology: SiC
Kind of channel: enhanced
Pulsed drain current: 105A
Drain-source voltage: 1.2kV
Drain current: 46A
On-state resistance: 50mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 46A; Idm: 105A; 323W
Power dissipation: 323W
Mounting: THT
Case: TO247-3
Gate charge: 137nC
Technology: SiC
Kind of channel: enhanced
Pulsed drain current: 105A
Drain-source voltage: 1.2kV
Drain current: 46A
On-state resistance: 50mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Produkt ist nicht verfügbar
MSC040SMA120B |
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Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 46A; Idm: 105A; 323W
Power dissipation: 323W
Mounting: THT
Case: TO247-3
Gate charge: 137nC
Technology: SiC
Kind of channel: enhanced
Pulsed drain current: 105A
Drain-source voltage: 1.2kV
Drain current: 46A
On-state resistance: 50mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 46A; Idm: 105A; 323W
Power dissipation: 323W
Mounting: THT
Case: TO247-3
Gate charge: 137nC
Technology: SiC
Kind of channel: enhanced
Pulsed drain current: 105A
Drain-source voltage: 1.2kV
Drain current: 46A
On-state resistance: 50mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
MSC040SMA120B4 |
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Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 46A; Idm: 105A; 323W
Polarisation: unipolar
Drain-source voltage: 1.2kV
Power dissipation: 323W
Case: TO247-4
Mounting: THT
Features of semiconductor devices: Kelvin terminal
Gate charge: 137nC
Technology: SiC
Kind of channel: enhanced
Drain current: 46A
Pulsed drain current: 105A
On-state resistance: 50mΩ
Type of transistor: N-MOSFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 46A; Idm: 105A; 323W
Polarisation: unipolar
Drain-source voltage: 1.2kV
Power dissipation: 323W
Case: TO247-4
Mounting: THT
Features of semiconductor devices: Kelvin terminal
Gate charge: 137nC
Technology: SiC
Kind of channel: enhanced
Drain current: 46A
Pulsed drain current: 105A
On-state resistance: 50mΩ
Type of transistor: N-MOSFET
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3+ | 27.33 EUR |
MSC040SMA120B4 |
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Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 46A; Idm: 105A; 323W
Polarisation: unipolar
Drain-source voltage: 1.2kV
Power dissipation: 323W
Case: TO247-4
Mounting: THT
Features of semiconductor devices: Kelvin terminal
Gate charge: 137nC
Technology: SiC
Kind of channel: enhanced
Drain current: 46A
Pulsed drain current: 105A
On-state resistance: 50mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 46A; Idm: 105A; 323W
Polarisation: unipolar
Drain-source voltage: 1.2kV
Power dissipation: 323W
Case: TO247-4
Mounting: THT
Features of semiconductor devices: Kelvin terminal
Gate charge: 137nC
Technology: SiC
Kind of channel: enhanced
Drain current: 46A
Pulsed drain current: 105A
On-state resistance: 50mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
auf Bestellung 30 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3+ | 27.33 EUR |
MSC040SMA120J |
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Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 37A; SOT227B; screw; Idm: 105A
Power dissipation: 208W
Case: SOT227B
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Pulsed drain current: 105A
Drain-source voltage: 1.2kV
Drain current: 37A
On-state resistance: 50mΩ
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 37A; SOT227B; screw; Idm: 105A
Power dissipation: 208W
Case: SOT227B
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Pulsed drain current: 105A
Drain-source voltage: 1.2kV
Drain current: 37A
On-state resistance: 50mΩ
Produkt ist nicht verfügbar
MSC040SMA120J |
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Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 37A; SOT227B; screw; Idm: 105A
Power dissipation: 208W
Case: SOT227B
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Pulsed drain current: 105A
Drain-source voltage: 1.2kV
Drain current: 37A
On-state resistance: 50mΩ
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 37A; SOT227B; screw; Idm: 105A
Power dissipation: 208W
Case: SOT227B
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Pulsed drain current: 105A
Drain-source voltage: 1.2kV
Drain current: 37A
On-state resistance: 50mΩ
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
MSC040SMA120S |
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Hersteller: MICROCHIP (MICROSEMI)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 45A; Idm: 159A; 303W
Power dissipation: 303W
Mounting: SMD
Case: D3PAK
Gate charge: 137nC
Technology: SiC
Kind of channel: enhanced
Pulsed drain current: 159A
Drain-source voltage: 1.2kV
Drain current: 45A
On-state resistance: 50mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 45A; Idm: 159A; 303W
Power dissipation: 303W
Mounting: SMD
Case: D3PAK
Gate charge: 137nC
Technology: SiC
Kind of channel: enhanced
Pulsed drain current: 159A
Drain-source voltage: 1.2kV
Drain current: 45A
On-state resistance: 50mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Produkt ist nicht verfügbar
MSC040SMA120S |
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Hersteller: MICROCHIP (MICROSEMI)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 45A; Idm: 159A; 303W
Power dissipation: 303W
Mounting: SMD
Case: D3PAK
Gate charge: 137nC
Technology: SiC
Kind of channel: enhanced
Pulsed drain current: 159A
Drain-source voltage: 1.2kV
Drain current: 45A
On-state resistance: 50mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 45A; Idm: 159A; 303W
Power dissipation: 303W
Mounting: SMD
Case: D3PAK
Gate charge: 137nC
Technology: SiC
Kind of channel: enhanced
Pulsed drain current: 159A
Drain-source voltage: 1.2kV
Drain current: 45A
On-state resistance: 50mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
MSC050SDA070B |
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Hersteller: MICROCHIP (MICROSEMI)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 700V; 50A; 123W; TO247-2
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 700V
Load current: 50A
Semiconductor structure: single diode
Max. forward voltage: 1.9V
Case: TO247-2
Leakage current: 0.25mA
Max. forward impulse current: 124A
Power dissipation: 123W
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 700V; 50A; 123W; TO247-2
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 700V
Load current: 50A
Semiconductor structure: single diode
Max. forward voltage: 1.9V
Case: TO247-2
Leakage current: 0.25mA
Max. forward impulse current: 124A
Power dissipation: 123W
Produkt ist nicht verfügbar
MSC050SDA070B |
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Hersteller: MICROCHIP (MICROSEMI)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 700V; 50A; 123W; TO247-2
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 700V
Load current: 50A
Semiconductor structure: single diode
Max. forward voltage: 1.9V
Case: TO247-2
Leakage current: 0.25mA
Max. forward impulse current: 124A
Power dissipation: 123W
Anzahl je Verpackung: 1 Stücke
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 700V; 50A; 123W; TO247-2
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 700V
Load current: 50A
Semiconductor structure: single diode
Max. forward voltage: 1.9V
Case: TO247-2
Leakage current: 0.25mA
Max. forward impulse current: 124A
Power dissipation: 123W
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
MSC050SDA070BCT |
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Hersteller: MICROCHIP (MICROSEMI)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 700V; 50A; 123W; TO247-3
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 700V
Load current: 50A
Semiconductor structure: common cathode; double
Max. forward voltage: 1.9V
Case: TO247-3
Leakage current: 0.25mA
Max. forward impulse current: 124A
Power dissipation: 123W
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 700V; 50A; 123W; TO247-3
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 700V
Load current: 50A
Semiconductor structure: common cathode; double
Max. forward voltage: 1.9V
Case: TO247-3
Leakage current: 0.25mA
Max. forward impulse current: 124A
Power dissipation: 123W
Produkt ist nicht verfügbar
MSC050SDA070BCT |
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Hersteller: MICROCHIP (MICROSEMI)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 700V; 50A; 123W; TO247-3
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 700V
Load current: 50A
Semiconductor structure: common cathode; double
Max. forward voltage: 1.9V
Case: TO247-3
Leakage current: 0.25mA
Max. forward impulse current: 124A
Power dissipation: 123W
Anzahl je Verpackung: 1 Stücke
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 700V; 50A; 123W; TO247-3
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 700V
Load current: 50A
Semiconductor structure: common cathode; double
Max. forward voltage: 1.9V
Case: TO247-3
Leakage current: 0.25mA
Max. forward impulse current: 124A
Power dissipation: 123W
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
MSC050SDA070S |
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Hersteller: MICROCHIP (MICROSEMI)
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 700V; 50A; D3PAK; 123W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 700V
Load current: 50A
Semiconductor structure: single diode
Max. forward voltage: 1.9V
Case: D3PAK
Leakage current: 0.25mA
Max. forward impulse current: 124A
Power dissipation: 123W
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 700V; 50A; D3PAK; 123W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 700V
Load current: 50A
Semiconductor structure: single diode
Max. forward voltage: 1.9V
Case: D3PAK
Leakage current: 0.25mA
Max. forward impulse current: 124A
Power dissipation: 123W
Produkt ist nicht verfügbar
MSC050SDA070S |
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Hersteller: MICROCHIP (MICROSEMI)
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 700V; 50A; D3PAK; 123W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 700V
Load current: 50A
Semiconductor structure: single diode
Max. forward voltage: 1.9V
Case: D3PAK
Leakage current: 0.25mA
Max. forward impulse current: 124A
Power dissipation: 123W
Anzahl je Verpackung: 1 Stücke
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 700V; 50A; D3PAK; 123W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 700V
Load current: 50A
Semiconductor structure: single diode
Max. forward voltage: 1.9V
Case: D3PAK
Leakage current: 0.25mA
Max. forward impulse current: 124A
Power dissipation: 123W
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
MSC050SDA120B |
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Hersteller: MICROCHIP (MICROSEMI)
MSC050SDA120B THT Schottky diodes
MSC050SDA120B THT Schottky diodes
Produkt ist nicht verfügbar
MSC050SDA120BCT |
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Hersteller: MICROCHIP (MICROSEMI)
MSC050SDA120BCT THT Schottky diodes
MSC050SDA120BCT THT Schottky diodes
Produkt ist nicht verfügbar
MSC050SDA120S |
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Hersteller: MICROCHIP (MICROSEMI)
MSC050SDA120S SMD Schottky diodes
MSC050SDA120S SMD Schottky diodes
Produkt ist nicht verfügbar
MSC050SDA170B |
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Hersteller: MICROCHIP (MICROSEMI)
MSC050SDA170B THT Schottky diodes
MSC050SDA170B THT Schottky diodes
Produkt ist nicht verfügbar
MSC060SMA070B |
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Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 700V; 28A; Idm: 100A; 143W
Polarisation: unipolar
Drain-source voltage: 700V
Power dissipation: 143W
Case: TO247-3
Mounting: THT
Gate charge: 56nC
Technology: SiC
Kind of channel: enhanced
Drain current: 28A
Pulsed drain current: 100A
On-state resistance: 75mΩ
Type of transistor: N-MOSFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 700V; 28A; Idm: 100A; 143W
Polarisation: unipolar
Drain-source voltage: 700V
Power dissipation: 143W
Case: TO247-3
Mounting: THT
Gate charge: 56nC
Technology: SiC
Kind of channel: enhanced
Drain current: 28A
Pulsed drain current: 100A
On-state resistance: 75mΩ
Type of transistor: N-MOSFET
auf Bestellung 23 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
5+ | 16.16 EUR |
6+ | 12.18 EUR |
7+ | 11.51 EUR |
MSC060SMA070B |
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Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 700V; 28A; Idm: 100A; 143W
Polarisation: unipolar
Drain-source voltage: 700V
Power dissipation: 143W
Case: TO247-3
Mounting: THT
Gate charge: 56nC
Technology: SiC
Kind of channel: enhanced
Drain current: 28A
Pulsed drain current: 100A
On-state resistance: 75mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 700V; 28A; Idm: 100A; 143W
Polarisation: unipolar
Drain-source voltage: 700V
Power dissipation: 143W
Case: TO247-3
Mounting: THT
Gate charge: 56nC
Technology: SiC
Kind of channel: enhanced
Drain current: 28A
Pulsed drain current: 100A
On-state resistance: 75mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
auf Bestellung 23 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
5+ | 16.16 EUR |
6+ | 12.18 EUR |
7+ | 11.51 EUR |
MSC060SMA070B4 |
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Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 700V; 28A; Idm: 100A; 143W
Polarisation: unipolar
Drain-source voltage: 700V
Power dissipation: 143W
Case: TO247-4
Mounting: THT
Features of semiconductor devices: Kelvin terminal
Gate charge: 56nC
Technology: SiC
Kind of channel: enhanced
Drain current: 28A
Pulsed drain current: 100A
On-state resistance: 75mΩ
Type of transistor: N-MOSFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 700V; 28A; Idm: 100A; 143W
Polarisation: unipolar
Drain-source voltage: 700V
Power dissipation: 143W
Case: TO247-4
Mounting: THT
Features of semiconductor devices: Kelvin terminal
Gate charge: 56nC
Technology: SiC
Kind of channel: enhanced
Drain current: 28A
Pulsed drain current: 100A
On-state resistance: 75mΩ
Type of transistor: N-MOSFET
auf Bestellung 46 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
5+ | 16.52 EUR |
7+ | 10.87 EUR |
MSC060SMA070B4 |
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Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 700V; 28A; Idm: 100A; 143W
Polarisation: unipolar
Drain-source voltage: 700V
Power dissipation: 143W
Case: TO247-4
Mounting: THT
Features of semiconductor devices: Kelvin terminal
Gate charge: 56nC
Technology: SiC
Kind of channel: enhanced
Drain current: 28A
Pulsed drain current: 100A
On-state resistance: 75mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 700V; 28A; Idm: 100A; 143W
Polarisation: unipolar
Drain-source voltage: 700V
Power dissipation: 143W
Case: TO247-4
Mounting: THT
Features of semiconductor devices: Kelvin terminal
Gate charge: 56nC
Technology: SiC
Kind of channel: enhanced
Drain current: 28A
Pulsed drain current: 100A
On-state resistance: 75mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
auf Bestellung 46 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
5+ | 16.52 EUR |
7+ | 10.87 EUR |
MSC060SMA070S |
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Hersteller: MICROCHIP (MICROSEMI)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 700V; 26A; Idm: 93A; 130W; D3PAK
Polarisation: unipolar
Drain-source voltage: 700V
Power dissipation: 130W
Case: D3PAK
Mounting: SMD
Gate charge: 56nC
Technology: SiC
Kind of channel: enhanced
Drain current: 26A
Pulsed drain current: 93A
On-state resistance: 75mΩ
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 700V; 26A; Idm: 93A; 130W; D3PAK
Polarisation: unipolar
Drain-source voltage: 700V
Power dissipation: 130W
Case: D3PAK
Mounting: SMD
Gate charge: 56nC
Technology: SiC
Kind of channel: enhanced
Drain current: 26A
Pulsed drain current: 93A
On-state resistance: 75mΩ
Type of transistor: N-MOSFET
auf Bestellung 50 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
5+ | 17.59 EUR |
6+ | 12.24 EUR |
7+ | 11.57 EUR |
MSC060SMA070S |
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Hersteller: MICROCHIP (MICROSEMI)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 700V; 26A; Idm: 93A; 130W; D3PAK
Polarisation: unipolar
Drain-source voltage: 700V
Power dissipation: 130W
Case: D3PAK
Mounting: SMD
Gate charge: 56nC
Technology: SiC
Kind of channel: enhanced
Drain current: 26A
Pulsed drain current: 93A
On-state resistance: 75mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 700V; 26A; Idm: 93A; 130W; D3PAK
Polarisation: unipolar
Drain-source voltage: 700V
Power dissipation: 130W
Case: D3PAK
Mounting: SMD
Gate charge: 56nC
Technology: SiC
Kind of channel: enhanced
Drain current: 26A
Pulsed drain current: 93A
On-state resistance: 75mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
auf Bestellung 50 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
5+ | 17.59 EUR |
6+ | 12.24 EUR |
7+ | 11.57 EUR |
MSC080SMA120B |
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Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 26A; Idm: 91A; 200W
Polarisation: unipolar
Drain-source voltage: 1.2kV
Power dissipation: 200W
Case: TO247-3
Mounting: THT
Gate charge: 64nC
Technology: SiC
Kind of channel: enhanced
Drain current: 26A
Pulsed drain current: 91A
On-state resistance: 0.1Ω
Type of transistor: N-MOSFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 26A; Idm: 91A; 200W
Polarisation: unipolar
Drain-source voltage: 1.2kV
Power dissipation: 200W
Case: TO247-3
Mounting: THT
Gate charge: 64nC
Technology: SiC
Kind of channel: enhanced
Drain current: 26A
Pulsed drain current: 91A
On-state resistance: 0.1Ω
Type of transistor: N-MOSFET
auf Bestellung 6 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
4+ | 17.88 EUR |
MSC080SMA120B |
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Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 26A; Idm: 91A; 200W
Polarisation: unipolar
Drain-source voltage: 1.2kV
Power dissipation: 200W
Case: TO247-3
Mounting: THT
Gate charge: 64nC
Technology: SiC
Kind of channel: enhanced
Drain current: 26A
Pulsed drain current: 91A
On-state resistance: 0.1Ω
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 26A; Idm: 91A; 200W
Polarisation: unipolar
Drain-source voltage: 1.2kV
Power dissipation: 200W
Case: TO247-3
Mounting: THT
Gate charge: 64nC
Technology: SiC
Kind of channel: enhanced
Drain current: 26A
Pulsed drain current: 91A
On-state resistance: 0.1Ω
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
auf Bestellung 6 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
4+ | 17.88 EUR |
MSC080SMA120B4 |
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Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 26A; Idm: 90A; 200W
Polarisation: unipolar
Drain-source voltage: 1.2kV
Power dissipation: 200W
Case: TO247-4
Mounting: THT
Features of semiconductor devices: Kelvin terminal
Gate charge: 64nC
Technology: SiC
Kind of channel: enhanced
Drain current: 26A
Pulsed drain current: 90A
On-state resistance: 0.1Ω
Type of transistor: N-MOSFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 26A; Idm: 90A; 200W
Polarisation: unipolar
Drain-source voltage: 1.2kV
Power dissipation: 200W
Case: TO247-4
Mounting: THT
Features of semiconductor devices: Kelvin terminal
Gate charge: 64nC
Technology: SiC
Kind of channel: enhanced
Drain current: 26A
Pulsed drain current: 90A
On-state resistance: 0.1Ω
Type of transistor: N-MOSFET
auf Bestellung 35 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
5+ | 15.76 EUR |
MSC080SMA120B4 |
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Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 26A; Idm: 90A; 200W
Polarisation: unipolar
Drain-source voltage: 1.2kV
Power dissipation: 200W
Case: TO247-4
Mounting: THT
Features of semiconductor devices: Kelvin terminal
Gate charge: 64nC
Technology: SiC
Kind of channel: enhanced
Drain current: 26A
Pulsed drain current: 90A
On-state resistance: 0.1Ω
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 26A; Idm: 90A; 200W
Polarisation: unipolar
Drain-source voltage: 1.2kV
Power dissipation: 200W
Case: TO247-4
Mounting: THT
Features of semiconductor devices: Kelvin terminal
Gate charge: 64nC
Technology: SiC
Kind of channel: enhanced
Drain current: 26A
Pulsed drain current: 90A
On-state resistance: 0.1Ω
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
auf Bestellung 35 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
5+ | 15.76 EUR |
MSC080SMA120J |
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Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 26A; SOT227B; screw; Idm: 91A
Semiconductor structure: single transistor
Drain-source voltage: 1.2kV
Drain current: 26A
On-state resistance: 0.1Ω
Power dissipation: 200W
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Pulsed drain current: 91A
Case: SOT227B
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 26A; SOT227B; screw; Idm: 91A
Semiconductor structure: single transistor
Drain-source voltage: 1.2kV
Drain current: 26A
On-state resistance: 0.1Ω
Power dissipation: 200W
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Pulsed drain current: 91A
Case: SOT227B
Produkt ist nicht verfügbar
MSC080SMA120J |
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Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 26A; SOT227B; screw; Idm: 91A
Semiconductor structure: single transistor
Drain-source voltage: 1.2kV
Drain current: 26A
On-state resistance: 0.1Ω
Power dissipation: 200W
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Pulsed drain current: 91A
Case: SOT227B
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 26A; SOT227B; screw; Idm: 91A
Semiconductor structure: single transistor
Drain-source voltage: 1.2kV
Drain current: 26A
On-state resistance: 0.1Ω
Power dissipation: 200W
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Pulsed drain current: 91A
Case: SOT227B
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
MSC080SMA120S |
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Hersteller: MICROCHIP (MICROSEMI)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 25A; Idm: 87A; 182W
Drain-source voltage: 1.2kV
Drain current: 25A
On-state resistance: 0.1Ω
Type of transistor: N-MOSFET
Power dissipation: 182W
Polarisation: unipolar
Gate charge: 64nC
Technology: SiC
Kind of channel: enhanced
Pulsed drain current: 87A
Mounting: SMD
Case: D3PAK
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 25A; Idm: 87A; 182W
Drain-source voltage: 1.2kV
Drain current: 25A
On-state resistance: 0.1Ω
Type of transistor: N-MOSFET
Power dissipation: 182W
Polarisation: unipolar
Gate charge: 64nC
Technology: SiC
Kind of channel: enhanced
Pulsed drain current: 87A
Mounting: SMD
Case: D3PAK
Produkt ist nicht verfügbar
MSC080SMA120S |
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Hersteller: MICROCHIP (MICROSEMI)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 25A; Idm: 87A; 182W
Drain-source voltage: 1.2kV
Drain current: 25A
On-state resistance: 0.1Ω
Type of transistor: N-MOSFET
Power dissipation: 182W
Polarisation: unipolar
Gate charge: 64nC
Technology: SiC
Kind of channel: enhanced
Pulsed drain current: 87A
Mounting: SMD
Case: D3PAK
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 25A; Idm: 87A; 182W
Drain-source voltage: 1.2kV
Drain current: 25A
On-state resistance: 0.1Ω
Type of transistor: N-MOSFET
Power dissipation: 182W
Polarisation: unipolar
Gate charge: 64nC
Technology: SiC
Kind of channel: enhanced
Pulsed drain current: 87A
Mounting: SMD
Case: D3PAK
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar