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MSC030SDA070BCT MSC030SDA070BCT MICROCHIP (MICROSEMI) MSC030SDA070BCT.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 700V; 30A; 81W; TO247-3
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 700V
Load current: 30A
Power dissipation: 81W
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward impulse current: 146A
Max. forward voltage: 1.75V
Leakage current: 10µA
Produkt ist nicht verfügbar
MSC030SDA070BCT MSC030SDA070BCT MICROCHIP (MICROSEMI) MSC030SDA070BCT.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 700V; 30A; 81W; TO247-3
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 700V
Load current: 30A
Power dissipation: 81W
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward impulse current: 146A
Max. forward voltage: 1.75V
Leakage current: 10µA
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
MSC030SDA070K MSC030SDA070K MICROCHIP (MICROSEMI) MSC030SDA070K.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 700V; 30A; 72W; TO220-2
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 700V
Load current: 30A
Power dissipation: 72W
Semiconductor structure: single diode
Case: TO220-2
Heatsink thickness: 1.14...1.4mm
Max. forward impulse current: 146A
Max. forward voltage: 1.75V
Leakage current: 10µA
Produkt ist nicht verfügbar
MSC030SDA070K MSC030SDA070K MICROCHIP (MICROSEMI) MSC030SDA070K.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 700V; 30A; 72W; TO220-2
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 700V
Load current: 30A
Power dissipation: 72W
Semiconductor structure: single diode
Case: TO220-2
Heatsink thickness: 1.14...1.4mm
Max. forward impulse current: 146A
Max. forward voltage: 1.75V
Leakage current: 10µA
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
MSC030SDA070S MSC030SDA070S MICROCHIP (MICROSEMI) MSC030SDA070S.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 700V; 30A; D3PAK; 81W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 700V
Load current: 30A
Semiconductor structure: single diode
Max. forward voltage: 1.8V
Case: D3PAK
Leakage current: 10µA
Max. forward impulse current: 146A
Power dissipation: 81W
Produkt ist nicht verfügbar
MSC030SDA070S MSC030SDA070S MICROCHIP (MICROSEMI) MSC030SDA070S.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 700V; 30A; D3PAK; 81W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 700V
Load current: 30A
Semiconductor structure: single diode
Max. forward voltage: 1.8V
Case: D3PAK
Leakage current: 10µA
Max. forward impulse current: 146A
Power dissipation: 81W
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
MSC030SDA120B MSC030SDA120B MICROCHIP (MICROSEMI) MSC030SDA120B.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 30A; 112W; TO247-2
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 30A
Semiconductor structure: single diode
Max. forward voltage: 2.1V
Case: TO247-2
Leakage current: 0.15mA
Max. forward impulse current: 165A
Power dissipation: 112W
Produkt ist nicht verfügbar
MSC030SDA120B MSC030SDA120B MICROCHIP (MICROSEMI) MSC030SDA120B.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 30A; 112W; TO247-2
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 30A
Semiconductor structure: single diode
Max. forward voltage: 2.1V
Case: TO247-2
Leakage current: 0.15mA
Max. forward impulse current: 165A
Power dissipation: 112W
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
MSC030SDA120BCT MSC030SDA120BCT MICROCHIP (MICROSEMI) MSC030SDA120BCT.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 30A; 112W; TO247-3
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 30A
Semiconductor structure: common cathode; double
Max. forward voltage: 2.1V
Case: TO247-3
Leakage current: 0.15mA
Max. forward impulse current: 165A
Power dissipation: 112W
Produkt ist nicht verfügbar
MSC030SDA120BCT MSC030SDA120BCT MICROCHIP (MICROSEMI) MSC030SDA120BCT.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 30A; 112W; TO247-3
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 30A
Semiconductor structure: common cathode; double
Max. forward voltage: 2.1V
Case: TO247-3
Leakage current: 0.15mA
Max. forward impulse current: 165A
Power dissipation: 112W
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
MSC030SDA120K MSC030SDA120K MICROCHIP (MICROSEMI) MSC030SDA120K.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 30A; 130W; TO220-2
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 30A
Semiconductor structure: single diode
Max. forward voltage: 2.1V
Case: TO220-2
Leakage current: 0.15mA
Max. forward impulse current: 165A
Power dissipation: 130W
Heatsink thickness: 1.14...1.4mm
Produkt ist nicht verfügbar
MSC030SDA120K MSC030SDA120K MICROCHIP (MICROSEMI) MSC030SDA120K.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 30A; 130W; TO220-2
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 30A
Semiconductor structure: single diode
Max. forward voltage: 2.1V
Case: TO220-2
Leakage current: 0.15mA
Max. forward impulse current: 165A
Power dissipation: 130W
Heatsink thickness: 1.14...1.4mm
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
MSC030SDA120S MSC030SDA120S MICROCHIP (MICROSEMI) MSC030SDA120S.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 30A; D3PAK; 112W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 30A
Semiconductor structure: single diode
Max. forward voltage: 2.1V
Case: D3PAK
Leakage current: 0.15mA
Max. forward impulse current: 165A
Power dissipation: 112W
Produkt ist nicht verfügbar
MSC030SDA120S MSC030SDA120S MICROCHIP (MICROSEMI) MSC030SDA120S.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 30A; D3PAK; 112W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 30A
Semiconductor structure: single diode
Max. forward voltage: 2.1V
Case: D3PAK
Leakage current: 0.15mA
Max. forward impulse current: 165A
Power dissipation: 112W
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
MSC030SDA170B MSC030SDA170B MICROCHIP (MICROSEMI) MSC030SDA170B.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.7kV; 30A; 186W; TO247-2
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.7kV
Load current: 30A
Semiconductor structure: single diode
Max. forward voltage: 2.25V
Case: TO247-2
Leakage current: 125µA
Max. forward impulse current: 353A
Power dissipation: 186W
Produkt ist nicht verfügbar
MSC030SDA170B MSC030SDA170B MICROCHIP (MICROSEMI) MSC030SDA170B.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.7kV; 30A; 186W; TO247-2
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.7kV
Load current: 30A
Semiconductor structure: single diode
Max. forward voltage: 2.25V
Case: TO247-2
Leakage current: 125µA
Max. forward impulse current: 353A
Power dissipation: 186W
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
MSC030SDA330B MICROCHIP (MICROSEMI) MSC030SDA330B.PDF Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 3.3kV; 30A; 241W; TO247-2
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 3.3kV
Load current: 30A
Semiconductor structure: single diode
Max. forward voltage: 4.6V
Case: TO247-2
Leakage current: 50µA
Max. forward impulse current: 205A
Power dissipation: 241W
Produkt ist nicht verfügbar
MSC030SDA330B MICROCHIP (MICROSEMI) MSC030SDA330B.PDF Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 3.3kV; 30A; 241W; TO247-2
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 3.3kV
Load current: 30A
Semiconductor structure: single diode
Max. forward voltage: 4.6V
Case: TO247-2
Leakage current: 50µA
Max. forward impulse current: 205A
Power dissipation: 241W
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
MSC035SMA070B MSC035SMA070B MICROCHIP (MICROSEMI) 1244095-msc035sma070b-datasheet Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 700V; 54A; Idm: 192A; 283W
Technology: SiC
Mounting: THT
Case: TO247-3
Power dissipation: 283W
Type of transistor: N-MOSFET
On-state resistance: 44mΩ
Pulsed drain current: 192A
Gate charge: 99nC
Polarisation: unipolar
Drain current: 54A
Kind of channel: enhanced
Drain-source voltage: 700V
Produkt ist nicht verfügbar
MSC035SMA070B MSC035SMA070B MICROCHIP (MICROSEMI) 1244095-msc035sma070b-datasheet Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 700V; 54A; Idm: 192A; 283W
Technology: SiC
Mounting: THT
Case: TO247-3
Power dissipation: 283W
Type of transistor: N-MOSFET
On-state resistance: 44mΩ
Pulsed drain current: 192A
Gate charge: 99nC
Polarisation: unipolar
Drain current: 54A
Kind of channel: enhanced
Drain-source voltage: 700V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
MSC035SMA070B4 MSC035SMA070B4 MICROCHIP (MICROSEMI) 1244749-msc035sma070b4-datasheet Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 700V; 54A; Idm: 192A; 283W
Polarisation: unipolar
Drain-source voltage: 700V
Power dissipation: 283W
Case: TO247-4
Mounting: THT
Features of semiconductor devices: Kelvin terminal
Gate charge: 99nC
Technology: SiC
Kind of channel: enhanced
Drain current: 54A
Pulsed drain current: 192A
On-state resistance: 44mΩ
Type of transistor: N-MOSFET
auf Bestellung 22 Stücke:
Lieferzeit 14-21 Tag (e)
3+24.58 EUR
4+ 22.57 EUR
10+ 22.24 EUR
Mindestbestellmenge: 3
MSC035SMA070B4 MSC035SMA070B4 MICROCHIP (MICROSEMI) 1244749-msc035sma070b4-datasheet Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 700V; 54A; Idm: 192A; 283W
Polarisation: unipolar
Drain-source voltage: 700V
Power dissipation: 283W
Case: TO247-4
Mounting: THT
Features of semiconductor devices: Kelvin terminal
Gate charge: 99nC
Technology: SiC
Kind of channel: enhanced
Drain current: 54A
Pulsed drain current: 192A
On-state resistance: 44mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
auf Bestellung 22 Stücke:
Lieferzeit 7-14 Tag (e)
3+24.58 EUR
4+ 22.57 EUR
10+ 22.24 EUR
Mindestbestellmenge: 3
MSC035SMA070S MSC035SMA070S MICROCHIP (MICROSEMI) 1244334-msc035sma070s-datasheet Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 700V; 46A; Idm: 163A; 206W
Polarisation: unipolar
Drain-source voltage: 700V
Power dissipation: 206W
Case: D3PAK
Mounting: SMD
Gate charge: 99nC
Technology: SiC
Kind of channel: enhanced
Drain current: 46A
Pulsed drain current: 163A
On-state resistance: 44mΩ
Type of transistor: N-MOSFET
auf Bestellung 27 Stücke:
Lieferzeit 14-21 Tag (e)
4+18.52 EUR
5+ 17.5 EUR
Mindestbestellmenge: 4
MSC035SMA070S MSC035SMA070S MICROCHIP (MICROSEMI) 1244334-msc035sma070s-datasheet Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 700V; 46A; Idm: 163A; 206W
Polarisation: unipolar
Drain-source voltage: 700V
Power dissipation: 206W
Case: D3PAK
Mounting: SMD
Gate charge: 99nC
Technology: SiC
Kind of channel: enhanced
Drain current: 46A
Pulsed drain current: 163A
On-state resistance: 44mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
auf Bestellung 27 Stücke:
Lieferzeit 7-14 Tag (e)
4+18.52 EUR
5+ 17.5 EUR
Mindestbestellmenge: 4
MSC035SMA170B MSC035SMA170B MICROCHIP (MICROSEMI) 1244846-msc035sma170b-datasheet Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 48A; Idm: 200A; 370W
Technology: SiC
Mounting: THT
Case: TO247-3
Power dissipation: 370W
Type of transistor: N-MOSFET
On-state resistance: 45mΩ
Pulsed drain current: 200A
Gate charge: 178nC
Polarisation: unipolar
Drain current: 48A
Kind of channel: enhanced
Drain-source voltage: 1.7kV
Produkt ist nicht verfügbar
MSC035SMA170B MSC035SMA170B MICROCHIP (MICROSEMI) 1244846-msc035sma170b-datasheet Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 48A; Idm: 200A; 370W
Technology: SiC
Mounting: THT
Case: TO247-3
Power dissipation: 370W
Type of transistor: N-MOSFET
On-state resistance: 45mΩ
Pulsed drain current: 200A
Gate charge: 178nC
Polarisation: unipolar
Drain current: 48A
Kind of channel: enhanced
Drain-source voltage: 1.7kV
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
MSC035SMA170B4 MICROCHIP (MICROSEMI) MSC035SMA170B4.PDF Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 48A; Idm: 200A; 370W
Mounting: THT
Case: TO247-4
Power dissipation: 370W
Polarisation: unipolar
Features of semiconductor devices: Kelvin terminal
Gate charge: 178nC
Technology: SiC
Kind of channel: enhanced
Pulsed drain current: 200A
Drain-source voltage: 1.7kV
Drain current: 48A
On-state resistance: 45mΩ
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
MSC035SMA170B4 MICROCHIP (MICROSEMI) MSC035SMA170B4.PDF Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 48A; Idm: 200A; 370W
Mounting: THT
Case: TO247-4
Power dissipation: 370W
Polarisation: unipolar
Features of semiconductor devices: Kelvin terminal
Gate charge: 178nC
Technology: SiC
Kind of channel: enhanced
Pulsed drain current: 200A
Drain-source voltage: 1.7kV
Drain current: 48A
On-state resistance: 45mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
MSC040SMA120B MSC040SMA120B MICROCHIP (MICROSEMI) 1243183-msc040sma120b-datasheet Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 46A; Idm: 105A; 323W
Power dissipation: 323W
Mounting: THT
Case: TO247-3
Gate charge: 137nC
Technology: SiC
Kind of channel: enhanced
Pulsed drain current: 105A
Drain-source voltage: 1.2kV
Drain current: 46A
On-state resistance: 50mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Produkt ist nicht verfügbar
MSC040SMA120B MSC040SMA120B MICROCHIP (MICROSEMI) 1243183-msc040sma120b-datasheet Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 46A; Idm: 105A; 323W
Power dissipation: 323W
Mounting: THT
Case: TO247-3
Gate charge: 137nC
Technology: SiC
Kind of channel: enhanced
Pulsed drain current: 105A
Drain-source voltage: 1.2kV
Drain current: 46A
On-state resistance: 50mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
MSC040SMA120B4 MSC040SMA120B4 MICROCHIP (MICROSEMI) 1244456-msc040sma120b4-datasheet Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 46A; Idm: 105A; 323W
Polarisation: unipolar
Drain-source voltage: 1.2kV
Power dissipation: 323W
Case: TO247-4
Mounting: THT
Features of semiconductor devices: Kelvin terminal
Gate charge: 137nC
Technology: SiC
Kind of channel: enhanced
Drain current: 46A
Pulsed drain current: 105A
On-state resistance: 50mΩ
Type of transistor: N-MOSFET
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
3+27.33 EUR
Mindestbestellmenge: 3
MSC040SMA120B4 MSC040SMA120B4 MICROCHIP (MICROSEMI) 1244456-msc040sma120b4-datasheet Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 46A; Idm: 105A; 323W
Polarisation: unipolar
Drain-source voltage: 1.2kV
Power dissipation: 323W
Case: TO247-4
Mounting: THT
Features of semiconductor devices: Kelvin terminal
Gate charge: 137nC
Technology: SiC
Kind of channel: enhanced
Drain current: 46A
Pulsed drain current: 105A
On-state resistance: 50mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
auf Bestellung 30 Stücke:
Lieferzeit 7-14 Tag (e)
3+27.33 EUR
Mindestbestellmenge: 3
MSC040SMA120J MICROCHIP (MICROSEMI) 1243813-msc040sma120j-datasheet Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 37A; SOT227B; screw; Idm: 105A
Power dissipation: 208W
Case: SOT227B
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Pulsed drain current: 105A
Drain-source voltage: 1.2kV
Drain current: 37A
On-state resistance: 50mΩ
Produkt ist nicht verfügbar
MSC040SMA120J MICROCHIP (MICROSEMI) 1243813-msc040sma120j-datasheet Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 37A; SOT227B; screw; Idm: 105A
Power dissipation: 208W
Case: SOT227B
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Pulsed drain current: 105A
Drain-source voltage: 1.2kV
Drain current: 37A
On-state resistance: 50mΩ
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
MSC040SMA120S MSC040SMA120S MICROCHIP (MICROSEMI) 1244005-msc040sma120s-datasheet Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 45A; Idm: 159A; 303W
Power dissipation: 303W
Mounting: SMD
Case: D3PAK
Gate charge: 137nC
Technology: SiC
Kind of channel: enhanced
Pulsed drain current: 159A
Drain-source voltage: 1.2kV
Drain current: 45A
On-state resistance: 50mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Produkt ist nicht verfügbar
MSC040SMA120S MSC040SMA120S MICROCHIP (MICROSEMI) 1244005-msc040sma120s-datasheet Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 45A; Idm: 159A; 303W
Power dissipation: 303W
Mounting: SMD
Case: D3PAK
Gate charge: 137nC
Technology: SiC
Kind of channel: enhanced
Pulsed drain current: 159A
Drain-source voltage: 1.2kV
Drain current: 45A
On-state resistance: 50mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
MSC050SDA070B MSC050SDA070B MICROCHIP (MICROSEMI) MSC050SDA070B.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 700V; 50A; 123W; TO247-2
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 700V
Load current: 50A
Semiconductor structure: single diode
Max. forward voltage: 1.9V
Case: TO247-2
Leakage current: 0.25mA
Max. forward impulse current: 124A
Power dissipation: 123W
Produkt ist nicht verfügbar
MSC050SDA070B MSC050SDA070B MICROCHIP (MICROSEMI) MSC050SDA070B.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 700V; 50A; 123W; TO247-2
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 700V
Load current: 50A
Semiconductor structure: single diode
Max. forward voltage: 1.9V
Case: TO247-2
Leakage current: 0.25mA
Max. forward impulse current: 124A
Power dissipation: 123W
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
MSC050SDA070BCT MSC050SDA070BCT MICROCHIP (MICROSEMI) MSC050SDA070BCT.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 700V; 50A; 123W; TO247-3
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 700V
Load current: 50A
Semiconductor structure: common cathode; double
Max. forward voltage: 1.9V
Case: TO247-3
Leakage current: 0.25mA
Max. forward impulse current: 124A
Power dissipation: 123W
Produkt ist nicht verfügbar
MSC050SDA070BCT MSC050SDA070BCT MICROCHIP (MICROSEMI) MSC050SDA070BCT.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 700V; 50A; 123W; TO247-3
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 700V
Load current: 50A
Semiconductor structure: common cathode; double
Max. forward voltage: 1.9V
Case: TO247-3
Leakage current: 0.25mA
Max. forward impulse current: 124A
Power dissipation: 123W
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
MSC050SDA070S MSC050SDA070S MICROCHIP (MICROSEMI) MSC050SDA070S.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 700V; 50A; D3PAK; 123W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 700V
Load current: 50A
Semiconductor structure: single diode
Max. forward voltage: 1.9V
Case: D3PAK
Leakage current: 0.25mA
Max. forward impulse current: 124A
Power dissipation: 123W
Produkt ist nicht verfügbar
MSC050SDA070S MSC050SDA070S MICROCHIP (MICROSEMI) MSC050SDA070S.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 700V; 50A; D3PAK; 123W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 700V
Load current: 50A
Semiconductor structure: single diode
Max. forward voltage: 1.9V
Case: D3PAK
Leakage current: 0.25mA
Max. forward impulse current: 124A
Power dissipation: 123W
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
MSC050SDA120B MICROCHIP (MICROSEMI) 137747-msc050sda120b-datasheet MSC050SDA120B THT Schottky diodes
Produkt ist nicht verfügbar
MSC050SDA120BCT MICROCHIP (MICROSEMI) 1244776-msc050sda120bct-datasheet MSC050SDA120BCT THT Schottky diodes
Produkt ist nicht verfügbar
MSC050SDA120S MICROCHIP (MICROSEMI) 1243947-msc050sda120s-datasheet MSC050SDA120S SMD Schottky diodes
Produkt ist nicht verfügbar
MSC050SDA170B MICROCHIP (MICROSEMI) 1244102-msc050sda170b-datasheet MSC050SDA170B THT Schottky diodes
Produkt ist nicht verfügbar
MSC060SMA070B MSC060SMA070B MICROCHIP (MICROSEMI) 1244482-msc060sma070b-datasheet Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 700V; 28A; Idm: 100A; 143W
Polarisation: unipolar
Drain-source voltage: 700V
Power dissipation: 143W
Case: TO247-3
Mounting: THT
Gate charge: 56nC
Technology: SiC
Kind of channel: enhanced
Drain current: 28A
Pulsed drain current: 100A
On-state resistance: 75mΩ
Type of transistor: N-MOSFET
auf Bestellung 23 Stücke:
Lieferzeit 14-21 Tag (e)
5+16.16 EUR
6+ 12.18 EUR
7+ 11.51 EUR
Mindestbestellmenge: 5
MSC060SMA070B MSC060SMA070B MICROCHIP (MICROSEMI) 1244482-msc060sma070b-datasheet Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 700V; 28A; Idm: 100A; 143W
Polarisation: unipolar
Drain-source voltage: 700V
Power dissipation: 143W
Case: TO247-3
Mounting: THT
Gate charge: 56nC
Technology: SiC
Kind of channel: enhanced
Drain current: 28A
Pulsed drain current: 100A
On-state resistance: 75mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
auf Bestellung 23 Stücke:
Lieferzeit 7-14 Tag (e)
5+16.16 EUR
6+ 12.18 EUR
7+ 11.51 EUR
Mindestbestellmenge: 5
MSC060SMA070B4 MSC060SMA070B4 MICROCHIP (MICROSEMI) 1244596-msc060sma070b4-datasheet Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 700V; 28A; Idm: 100A; 143W
Polarisation: unipolar
Drain-source voltage: 700V
Power dissipation: 143W
Case: TO247-4
Mounting: THT
Features of semiconductor devices: Kelvin terminal
Gate charge: 56nC
Technology: SiC
Kind of channel: enhanced
Drain current: 28A
Pulsed drain current: 100A
On-state resistance: 75mΩ
Type of transistor: N-MOSFET
auf Bestellung 46 Stücke:
Lieferzeit 14-21 Tag (e)
5+16.52 EUR
7+ 10.87 EUR
Mindestbestellmenge: 5
MSC060SMA070B4 MSC060SMA070B4 MICROCHIP (MICROSEMI) 1244596-msc060sma070b4-datasheet Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 700V; 28A; Idm: 100A; 143W
Polarisation: unipolar
Drain-source voltage: 700V
Power dissipation: 143W
Case: TO247-4
Mounting: THT
Features of semiconductor devices: Kelvin terminal
Gate charge: 56nC
Technology: SiC
Kind of channel: enhanced
Drain current: 28A
Pulsed drain current: 100A
On-state resistance: 75mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
auf Bestellung 46 Stücke:
Lieferzeit 7-14 Tag (e)
5+16.52 EUR
7+ 10.87 EUR
Mindestbestellmenge: 5
MSC060SMA070S MSC060SMA070S MICROCHIP (MICROSEMI) 1244153-msc060sma070s Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 700V; 26A; Idm: 93A; 130W; D3PAK
Polarisation: unipolar
Drain-source voltage: 700V
Power dissipation: 130W
Case: D3PAK
Mounting: SMD
Gate charge: 56nC
Technology: SiC
Kind of channel: enhanced
Drain current: 26A
Pulsed drain current: 93A
On-state resistance: 75mΩ
Type of transistor: N-MOSFET
auf Bestellung 50 Stücke:
Lieferzeit 14-21 Tag (e)
5+17.59 EUR
6+ 12.24 EUR
7+ 11.57 EUR
Mindestbestellmenge: 5
MSC060SMA070S MSC060SMA070S MICROCHIP (MICROSEMI) 1244153-msc060sma070s Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 700V; 26A; Idm: 93A; 130W; D3PAK
Polarisation: unipolar
Drain-source voltage: 700V
Power dissipation: 130W
Case: D3PAK
Mounting: SMD
Gate charge: 56nC
Technology: SiC
Kind of channel: enhanced
Drain current: 26A
Pulsed drain current: 93A
On-state resistance: 75mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
auf Bestellung 50 Stücke:
Lieferzeit 7-14 Tag (e)
5+17.59 EUR
6+ 12.24 EUR
7+ 11.57 EUR
Mindestbestellmenge: 5
MSC080SMA120B MSC080SMA120B MICROCHIP (MICROSEMI) 1243494-msc080sma120b-datasheet Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 26A; Idm: 91A; 200W
Polarisation: unipolar
Drain-source voltage: 1.2kV
Power dissipation: 200W
Case: TO247-3
Mounting: THT
Gate charge: 64nC
Technology: SiC
Kind of channel: enhanced
Drain current: 26A
Pulsed drain current: 91A
On-state resistance: 0.1Ω
Type of transistor: N-MOSFET
auf Bestellung 6 Stücke:
Lieferzeit 14-21 Tag (e)
4+17.88 EUR
Mindestbestellmenge: 4
MSC080SMA120B MSC080SMA120B MICROCHIP (MICROSEMI) 1243494-msc080sma120b-datasheet Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 26A; Idm: 91A; 200W
Polarisation: unipolar
Drain-source voltage: 1.2kV
Power dissipation: 200W
Case: TO247-3
Mounting: THT
Gate charge: 64nC
Technology: SiC
Kind of channel: enhanced
Drain current: 26A
Pulsed drain current: 91A
On-state resistance: 0.1Ω
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
auf Bestellung 6 Stücke:
Lieferzeit 7-14 Tag (e)
4+17.88 EUR
Mindestbestellmenge: 4
MSC080SMA120B4 MSC080SMA120B4 MICROCHIP (MICROSEMI) 1244479-msc080sma120b4-datasheet Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 26A; Idm: 90A; 200W
Polarisation: unipolar
Drain-source voltage: 1.2kV
Power dissipation: 200W
Case: TO247-4
Mounting: THT
Features of semiconductor devices: Kelvin terminal
Gate charge: 64nC
Technology: SiC
Kind of channel: enhanced
Drain current: 26A
Pulsed drain current: 90A
On-state resistance: 0.1Ω
Type of transistor: N-MOSFET
auf Bestellung 35 Stücke:
Lieferzeit 14-21 Tag (e)
5+15.76 EUR
Mindestbestellmenge: 5
MSC080SMA120B4 MSC080SMA120B4 MICROCHIP (MICROSEMI) 1244479-msc080sma120b4-datasheet Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 26A; Idm: 90A; 200W
Polarisation: unipolar
Drain-source voltage: 1.2kV
Power dissipation: 200W
Case: TO247-4
Mounting: THT
Features of semiconductor devices: Kelvin terminal
Gate charge: 64nC
Technology: SiC
Kind of channel: enhanced
Drain current: 26A
Pulsed drain current: 90A
On-state resistance: 0.1Ω
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
auf Bestellung 35 Stücke:
Lieferzeit 7-14 Tag (e)
5+15.76 EUR
Mindestbestellmenge: 5
MSC080SMA120J MSC080SMA120J MICROCHIP (MICROSEMI) 1244845-msc080sma120j-datasheet Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 26A; SOT227B; screw; Idm: 91A
Semiconductor structure: single transistor
Drain-source voltage: 1.2kV
Drain current: 26A
On-state resistance: 0.1Ω
Power dissipation: 200W
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Pulsed drain current: 91A
Case: SOT227B
Produkt ist nicht verfügbar
MSC080SMA120J MSC080SMA120J MICROCHIP (MICROSEMI) 1244845-msc080sma120j-datasheet Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 26A; SOT227B; screw; Idm: 91A
Semiconductor structure: single transistor
Drain-source voltage: 1.2kV
Drain current: 26A
On-state resistance: 0.1Ω
Power dissipation: 200W
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Pulsed drain current: 91A
Case: SOT227B
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
MSC080SMA120S MSC080SMA120S MICROCHIP (MICROSEMI) 1244748-msc080sma120s-datasheet Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 25A; Idm: 87A; 182W
Drain-source voltage: 1.2kV
Drain current: 25A
On-state resistance: 0.1Ω
Type of transistor: N-MOSFET
Power dissipation: 182W
Polarisation: unipolar
Gate charge: 64nC
Technology: SiC
Kind of channel: enhanced
Pulsed drain current: 87A
Mounting: SMD
Case: D3PAK
Produkt ist nicht verfügbar
MSC080SMA120S MSC080SMA120S MICROCHIP (MICROSEMI) 1244748-msc080sma120s-datasheet Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 25A; Idm: 87A; 182W
Drain-source voltage: 1.2kV
Drain current: 25A
On-state resistance: 0.1Ω
Type of transistor: N-MOSFET
Power dissipation: 182W
Polarisation: unipolar
Gate charge: 64nC
Technology: SiC
Kind of channel: enhanced
Pulsed drain current: 87A
Mounting: SMD
Case: D3PAK
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
MSC030SDA070BCT MSC030SDA070BCT.pdf
MSC030SDA070BCT
Hersteller: MICROCHIP (MICROSEMI)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 700V; 30A; 81W; TO247-3
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 700V
Load current: 30A
Power dissipation: 81W
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward impulse current: 146A
Max. forward voltage: 1.75V
Leakage current: 10µA
Produkt ist nicht verfügbar
MSC030SDA070BCT MSC030SDA070BCT.pdf
MSC030SDA070BCT
Hersteller: MICROCHIP (MICROSEMI)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 700V; 30A; 81W; TO247-3
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 700V
Load current: 30A
Power dissipation: 81W
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward impulse current: 146A
Max. forward voltage: 1.75V
Leakage current: 10µA
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
MSC030SDA070K MSC030SDA070K.pdf
MSC030SDA070K
Hersteller: MICROCHIP (MICROSEMI)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 700V; 30A; 72W; TO220-2
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 700V
Load current: 30A
Power dissipation: 72W
Semiconductor structure: single diode
Case: TO220-2
Heatsink thickness: 1.14...1.4mm
Max. forward impulse current: 146A
Max. forward voltage: 1.75V
Leakage current: 10µA
Produkt ist nicht verfügbar
MSC030SDA070K MSC030SDA070K.pdf
MSC030SDA070K
Hersteller: MICROCHIP (MICROSEMI)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 700V; 30A; 72W; TO220-2
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 700V
Load current: 30A
Power dissipation: 72W
Semiconductor structure: single diode
Case: TO220-2
Heatsink thickness: 1.14...1.4mm
Max. forward impulse current: 146A
Max. forward voltage: 1.75V
Leakage current: 10µA
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
MSC030SDA070S MSC030SDA070S.pdf
MSC030SDA070S
Hersteller: MICROCHIP (MICROSEMI)
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 700V; 30A; D3PAK; 81W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 700V
Load current: 30A
Semiconductor structure: single diode
Max. forward voltage: 1.8V
Case: D3PAK
Leakage current: 10µA
Max. forward impulse current: 146A
Power dissipation: 81W
Produkt ist nicht verfügbar
MSC030SDA070S MSC030SDA070S.pdf
MSC030SDA070S
Hersteller: MICROCHIP (MICROSEMI)
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 700V; 30A; D3PAK; 81W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 700V
Load current: 30A
Semiconductor structure: single diode
Max. forward voltage: 1.8V
Case: D3PAK
Leakage current: 10µA
Max. forward impulse current: 146A
Power dissipation: 81W
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
MSC030SDA120B MSC030SDA120B.pdf
MSC030SDA120B
Hersteller: MICROCHIP (MICROSEMI)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 30A; 112W; TO247-2
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 30A
Semiconductor structure: single diode
Max. forward voltage: 2.1V
Case: TO247-2
Leakage current: 0.15mA
Max. forward impulse current: 165A
Power dissipation: 112W
Produkt ist nicht verfügbar
MSC030SDA120B MSC030SDA120B.pdf
MSC030SDA120B
Hersteller: MICROCHIP (MICROSEMI)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 30A; 112W; TO247-2
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 30A
Semiconductor structure: single diode
Max. forward voltage: 2.1V
Case: TO247-2
Leakage current: 0.15mA
Max. forward impulse current: 165A
Power dissipation: 112W
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
MSC030SDA120BCT MSC030SDA120BCT.pdf
MSC030SDA120BCT
Hersteller: MICROCHIP (MICROSEMI)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 30A; 112W; TO247-3
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 30A
Semiconductor structure: common cathode; double
Max. forward voltage: 2.1V
Case: TO247-3
Leakage current: 0.15mA
Max. forward impulse current: 165A
Power dissipation: 112W
Produkt ist nicht verfügbar
MSC030SDA120BCT MSC030SDA120BCT.pdf
MSC030SDA120BCT
Hersteller: MICROCHIP (MICROSEMI)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 30A; 112W; TO247-3
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 30A
Semiconductor structure: common cathode; double
Max. forward voltage: 2.1V
Case: TO247-3
Leakage current: 0.15mA
Max. forward impulse current: 165A
Power dissipation: 112W
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
MSC030SDA120K MSC030SDA120K.pdf
MSC030SDA120K
Hersteller: MICROCHIP (MICROSEMI)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 30A; 130W; TO220-2
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 30A
Semiconductor structure: single diode
Max. forward voltage: 2.1V
Case: TO220-2
Leakage current: 0.15mA
Max. forward impulse current: 165A
Power dissipation: 130W
Heatsink thickness: 1.14...1.4mm
Produkt ist nicht verfügbar
MSC030SDA120K MSC030SDA120K.pdf
MSC030SDA120K
Hersteller: MICROCHIP (MICROSEMI)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 30A; 130W; TO220-2
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 30A
Semiconductor structure: single diode
Max. forward voltage: 2.1V
Case: TO220-2
Leakage current: 0.15mA
Max. forward impulse current: 165A
Power dissipation: 130W
Heatsink thickness: 1.14...1.4mm
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
MSC030SDA120S MSC030SDA120S.pdf
MSC030SDA120S
Hersteller: MICROCHIP (MICROSEMI)
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 30A; D3PAK; 112W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 30A
Semiconductor structure: single diode
Max. forward voltage: 2.1V
Case: D3PAK
Leakage current: 0.15mA
Max. forward impulse current: 165A
Power dissipation: 112W
Produkt ist nicht verfügbar
MSC030SDA120S MSC030SDA120S.pdf
MSC030SDA120S
Hersteller: MICROCHIP (MICROSEMI)
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 30A; D3PAK; 112W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 30A
Semiconductor structure: single diode
Max. forward voltage: 2.1V
Case: D3PAK
Leakage current: 0.15mA
Max. forward impulse current: 165A
Power dissipation: 112W
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
MSC030SDA170B MSC030SDA170B.pdf
MSC030SDA170B
Hersteller: MICROCHIP (MICROSEMI)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.7kV; 30A; 186W; TO247-2
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.7kV
Load current: 30A
Semiconductor structure: single diode
Max. forward voltage: 2.25V
Case: TO247-2
Leakage current: 125µA
Max. forward impulse current: 353A
Power dissipation: 186W
Produkt ist nicht verfügbar
MSC030SDA170B MSC030SDA170B.pdf
MSC030SDA170B
Hersteller: MICROCHIP (MICROSEMI)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.7kV; 30A; 186W; TO247-2
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.7kV
Load current: 30A
Semiconductor structure: single diode
Max. forward voltage: 2.25V
Case: TO247-2
Leakage current: 125µA
Max. forward impulse current: 353A
Power dissipation: 186W
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
MSC030SDA330B MSC030SDA330B.PDF
Hersteller: MICROCHIP (MICROSEMI)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 3.3kV; 30A; 241W; TO247-2
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 3.3kV
Load current: 30A
Semiconductor structure: single diode
Max. forward voltage: 4.6V
Case: TO247-2
Leakage current: 50µA
Max. forward impulse current: 205A
Power dissipation: 241W
Produkt ist nicht verfügbar
MSC030SDA330B MSC030SDA330B.PDF
Hersteller: MICROCHIP (MICROSEMI)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 3.3kV; 30A; 241W; TO247-2
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 3.3kV
Load current: 30A
Semiconductor structure: single diode
Max. forward voltage: 4.6V
Case: TO247-2
Leakage current: 50µA
Max. forward impulse current: 205A
Power dissipation: 241W
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
MSC035SMA070B 1244095-msc035sma070b-datasheet
MSC035SMA070B
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 700V; 54A; Idm: 192A; 283W
Technology: SiC
Mounting: THT
Case: TO247-3
Power dissipation: 283W
Type of transistor: N-MOSFET
On-state resistance: 44mΩ
Pulsed drain current: 192A
Gate charge: 99nC
Polarisation: unipolar
Drain current: 54A
Kind of channel: enhanced
Drain-source voltage: 700V
Produkt ist nicht verfügbar
MSC035SMA070B 1244095-msc035sma070b-datasheet
MSC035SMA070B
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 700V; 54A; Idm: 192A; 283W
Technology: SiC
Mounting: THT
Case: TO247-3
Power dissipation: 283W
Type of transistor: N-MOSFET
On-state resistance: 44mΩ
Pulsed drain current: 192A
Gate charge: 99nC
Polarisation: unipolar
Drain current: 54A
Kind of channel: enhanced
Drain-source voltage: 700V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
MSC035SMA070B4 1244749-msc035sma070b4-datasheet
MSC035SMA070B4
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 700V; 54A; Idm: 192A; 283W
Polarisation: unipolar
Drain-source voltage: 700V
Power dissipation: 283W
Case: TO247-4
Mounting: THT
Features of semiconductor devices: Kelvin terminal
Gate charge: 99nC
Technology: SiC
Kind of channel: enhanced
Drain current: 54A
Pulsed drain current: 192A
On-state resistance: 44mΩ
Type of transistor: N-MOSFET
auf Bestellung 22 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
3+24.58 EUR
4+ 22.57 EUR
10+ 22.24 EUR
Mindestbestellmenge: 3
MSC035SMA070B4 1244749-msc035sma070b4-datasheet
MSC035SMA070B4
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 700V; 54A; Idm: 192A; 283W
Polarisation: unipolar
Drain-source voltage: 700V
Power dissipation: 283W
Case: TO247-4
Mounting: THT
Features of semiconductor devices: Kelvin terminal
Gate charge: 99nC
Technology: SiC
Kind of channel: enhanced
Drain current: 54A
Pulsed drain current: 192A
On-state resistance: 44mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
auf Bestellung 22 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
3+24.58 EUR
4+ 22.57 EUR
10+ 22.24 EUR
Mindestbestellmenge: 3
MSC035SMA070S 1244334-msc035sma070s-datasheet
MSC035SMA070S
Hersteller: MICROCHIP (MICROSEMI)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 700V; 46A; Idm: 163A; 206W
Polarisation: unipolar
Drain-source voltage: 700V
Power dissipation: 206W
Case: D3PAK
Mounting: SMD
Gate charge: 99nC
Technology: SiC
Kind of channel: enhanced
Drain current: 46A
Pulsed drain current: 163A
On-state resistance: 44mΩ
Type of transistor: N-MOSFET
auf Bestellung 27 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
4+18.52 EUR
5+ 17.5 EUR
Mindestbestellmenge: 4
MSC035SMA070S 1244334-msc035sma070s-datasheet
MSC035SMA070S
Hersteller: MICROCHIP (MICROSEMI)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 700V; 46A; Idm: 163A; 206W
Polarisation: unipolar
Drain-source voltage: 700V
Power dissipation: 206W
Case: D3PAK
Mounting: SMD
Gate charge: 99nC
Technology: SiC
Kind of channel: enhanced
Drain current: 46A
Pulsed drain current: 163A
On-state resistance: 44mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
auf Bestellung 27 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
4+18.52 EUR
5+ 17.5 EUR
Mindestbestellmenge: 4
MSC035SMA170B 1244846-msc035sma170b-datasheet
MSC035SMA170B
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 48A; Idm: 200A; 370W
Technology: SiC
Mounting: THT
Case: TO247-3
Power dissipation: 370W
Type of transistor: N-MOSFET
On-state resistance: 45mΩ
Pulsed drain current: 200A
Gate charge: 178nC
Polarisation: unipolar
Drain current: 48A
Kind of channel: enhanced
Drain-source voltage: 1.7kV
Produkt ist nicht verfügbar
MSC035SMA170B 1244846-msc035sma170b-datasheet
MSC035SMA170B
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 48A; Idm: 200A; 370W
Technology: SiC
Mounting: THT
Case: TO247-3
Power dissipation: 370W
Type of transistor: N-MOSFET
On-state resistance: 45mΩ
Pulsed drain current: 200A
Gate charge: 178nC
Polarisation: unipolar
Drain current: 48A
Kind of channel: enhanced
Drain-source voltage: 1.7kV
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
MSC035SMA170B4 MSC035SMA170B4.PDF
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 48A; Idm: 200A; 370W
Mounting: THT
Case: TO247-4
Power dissipation: 370W
Polarisation: unipolar
Features of semiconductor devices: Kelvin terminal
Gate charge: 178nC
Technology: SiC
Kind of channel: enhanced
Pulsed drain current: 200A
Drain-source voltage: 1.7kV
Drain current: 48A
On-state resistance: 45mΩ
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
MSC035SMA170B4 MSC035SMA170B4.PDF
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 48A; Idm: 200A; 370W
Mounting: THT
Case: TO247-4
Power dissipation: 370W
Polarisation: unipolar
Features of semiconductor devices: Kelvin terminal
Gate charge: 178nC
Technology: SiC
Kind of channel: enhanced
Pulsed drain current: 200A
Drain-source voltage: 1.7kV
Drain current: 48A
On-state resistance: 45mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
MSC040SMA120B 1243183-msc040sma120b-datasheet
MSC040SMA120B
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 46A; Idm: 105A; 323W
Power dissipation: 323W
Mounting: THT
Case: TO247-3
Gate charge: 137nC
Technology: SiC
Kind of channel: enhanced
Pulsed drain current: 105A
Drain-source voltage: 1.2kV
Drain current: 46A
On-state resistance: 50mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Produkt ist nicht verfügbar
MSC040SMA120B 1243183-msc040sma120b-datasheet
MSC040SMA120B
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 46A; Idm: 105A; 323W
Power dissipation: 323W
Mounting: THT
Case: TO247-3
Gate charge: 137nC
Technology: SiC
Kind of channel: enhanced
Pulsed drain current: 105A
Drain-source voltage: 1.2kV
Drain current: 46A
On-state resistance: 50mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
MSC040SMA120B4 1244456-msc040sma120b4-datasheet
MSC040SMA120B4
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 46A; Idm: 105A; 323W
Polarisation: unipolar
Drain-source voltage: 1.2kV
Power dissipation: 323W
Case: TO247-4
Mounting: THT
Features of semiconductor devices: Kelvin terminal
Gate charge: 137nC
Technology: SiC
Kind of channel: enhanced
Drain current: 46A
Pulsed drain current: 105A
On-state resistance: 50mΩ
Type of transistor: N-MOSFET
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
3+27.33 EUR
Mindestbestellmenge: 3
MSC040SMA120B4 1244456-msc040sma120b4-datasheet
MSC040SMA120B4
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 46A; Idm: 105A; 323W
Polarisation: unipolar
Drain-source voltage: 1.2kV
Power dissipation: 323W
Case: TO247-4
Mounting: THT
Features of semiconductor devices: Kelvin terminal
Gate charge: 137nC
Technology: SiC
Kind of channel: enhanced
Drain current: 46A
Pulsed drain current: 105A
On-state resistance: 50mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
auf Bestellung 30 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
3+27.33 EUR
Mindestbestellmenge: 3
MSC040SMA120J 1243813-msc040sma120j-datasheet
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 37A; SOT227B; screw; Idm: 105A
Power dissipation: 208W
Case: SOT227B
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Pulsed drain current: 105A
Drain-source voltage: 1.2kV
Drain current: 37A
On-state resistance: 50mΩ
Produkt ist nicht verfügbar
MSC040SMA120J 1243813-msc040sma120j-datasheet
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 37A; SOT227B; screw; Idm: 105A
Power dissipation: 208W
Case: SOT227B
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Pulsed drain current: 105A
Drain-source voltage: 1.2kV
Drain current: 37A
On-state resistance: 50mΩ
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
MSC040SMA120S 1244005-msc040sma120s-datasheet
MSC040SMA120S
Hersteller: MICROCHIP (MICROSEMI)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 45A; Idm: 159A; 303W
Power dissipation: 303W
Mounting: SMD
Case: D3PAK
Gate charge: 137nC
Technology: SiC
Kind of channel: enhanced
Pulsed drain current: 159A
Drain-source voltage: 1.2kV
Drain current: 45A
On-state resistance: 50mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Produkt ist nicht verfügbar
MSC040SMA120S 1244005-msc040sma120s-datasheet
MSC040SMA120S
Hersteller: MICROCHIP (MICROSEMI)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 45A; Idm: 159A; 303W
Power dissipation: 303W
Mounting: SMD
Case: D3PAK
Gate charge: 137nC
Technology: SiC
Kind of channel: enhanced
Pulsed drain current: 159A
Drain-source voltage: 1.2kV
Drain current: 45A
On-state resistance: 50mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
MSC050SDA070B MSC050SDA070B.pdf
MSC050SDA070B
Hersteller: MICROCHIP (MICROSEMI)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 700V; 50A; 123W; TO247-2
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 700V
Load current: 50A
Semiconductor structure: single diode
Max. forward voltage: 1.9V
Case: TO247-2
Leakage current: 0.25mA
Max. forward impulse current: 124A
Power dissipation: 123W
Produkt ist nicht verfügbar
MSC050SDA070B MSC050SDA070B.pdf
MSC050SDA070B
Hersteller: MICROCHIP (MICROSEMI)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 700V; 50A; 123W; TO247-2
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 700V
Load current: 50A
Semiconductor structure: single diode
Max. forward voltage: 1.9V
Case: TO247-2
Leakage current: 0.25mA
Max. forward impulse current: 124A
Power dissipation: 123W
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
MSC050SDA070BCT MSC050SDA070BCT.pdf
MSC050SDA070BCT
Hersteller: MICROCHIP (MICROSEMI)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 700V; 50A; 123W; TO247-3
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 700V
Load current: 50A
Semiconductor structure: common cathode; double
Max. forward voltage: 1.9V
Case: TO247-3
Leakage current: 0.25mA
Max. forward impulse current: 124A
Power dissipation: 123W
Produkt ist nicht verfügbar
MSC050SDA070BCT MSC050SDA070BCT.pdf
MSC050SDA070BCT
Hersteller: MICROCHIP (MICROSEMI)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 700V; 50A; 123W; TO247-3
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 700V
Load current: 50A
Semiconductor structure: common cathode; double
Max. forward voltage: 1.9V
Case: TO247-3
Leakage current: 0.25mA
Max. forward impulse current: 124A
Power dissipation: 123W
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
MSC050SDA070S MSC050SDA070S.pdf
MSC050SDA070S
Hersteller: MICROCHIP (MICROSEMI)
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 700V; 50A; D3PAK; 123W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 700V
Load current: 50A
Semiconductor structure: single diode
Max. forward voltage: 1.9V
Case: D3PAK
Leakage current: 0.25mA
Max. forward impulse current: 124A
Power dissipation: 123W
Produkt ist nicht verfügbar
MSC050SDA070S MSC050SDA070S.pdf
MSC050SDA070S
Hersteller: MICROCHIP (MICROSEMI)
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 700V; 50A; D3PAK; 123W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 700V
Load current: 50A
Semiconductor structure: single diode
Max. forward voltage: 1.9V
Case: D3PAK
Leakage current: 0.25mA
Max. forward impulse current: 124A
Power dissipation: 123W
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
MSC050SDA120B 137747-msc050sda120b-datasheet
Hersteller: MICROCHIP (MICROSEMI)
MSC050SDA120B THT Schottky diodes
Produkt ist nicht verfügbar
MSC050SDA120BCT 1244776-msc050sda120bct-datasheet
Hersteller: MICROCHIP (MICROSEMI)
MSC050SDA120BCT THT Schottky diodes
Produkt ist nicht verfügbar
MSC050SDA120S 1243947-msc050sda120s-datasheet
Hersteller: MICROCHIP (MICROSEMI)
MSC050SDA120S SMD Schottky diodes
Produkt ist nicht verfügbar
MSC050SDA170B 1244102-msc050sda170b-datasheet
Hersteller: MICROCHIP (MICROSEMI)
MSC050SDA170B THT Schottky diodes
Produkt ist nicht verfügbar
MSC060SMA070B 1244482-msc060sma070b-datasheet
MSC060SMA070B
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 700V; 28A; Idm: 100A; 143W
Polarisation: unipolar
Drain-source voltage: 700V
Power dissipation: 143W
Case: TO247-3
Mounting: THT
Gate charge: 56nC
Technology: SiC
Kind of channel: enhanced
Drain current: 28A
Pulsed drain current: 100A
On-state resistance: 75mΩ
Type of transistor: N-MOSFET
auf Bestellung 23 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
5+16.16 EUR
6+ 12.18 EUR
7+ 11.51 EUR
Mindestbestellmenge: 5
MSC060SMA070B 1244482-msc060sma070b-datasheet
MSC060SMA070B
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 700V; 28A; Idm: 100A; 143W
Polarisation: unipolar
Drain-source voltage: 700V
Power dissipation: 143W
Case: TO247-3
Mounting: THT
Gate charge: 56nC
Technology: SiC
Kind of channel: enhanced
Drain current: 28A
Pulsed drain current: 100A
On-state resistance: 75mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
auf Bestellung 23 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
5+16.16 EUR
6+ 12.18 EUR
7+ 11.51 EUR
Mindestbestellmenge: 5
MSC060SMA070B4 1244596-msc060sma070b4-datasheet
MSC060SMA070B4
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 700V; 28A; Idm: 100A; 143W
Polarisation: unipolar
Drain-source voltage: 700V
Power dissipation: 143W
Case: TO247-4
Mounting: THT
Features of semiconductor devices: Kelvin terminal
Gate charge: 56nC
Technology: SiC
Kind of channel: enhanced
Drain current: 28A
Pulsed drain current: 100A
On-state resistance: 75mΩ
Type of transistor: N-MOSFET
auf Bestellung 46 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
5+16.52 EUR
7+ 10.87 EUR
Mindestbestellmenge: 5
MSC060SMA070B4 1244596-msc060sma070b4-datasheet
MSC060SMA070B4
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 700V; 28A; Idm: 100A; 143W
Polarisation: unipolar
Drain-source voltage: 700V
Power dissipation: 143W
Case: TO247-4
Mounting: THT
Features of semiconductor devices: Kelvin terminal
Gate charge: 56nC
Technology: SiC
Kind of channel: enhanced
Drain current: 28A
Pulsed drain current: 100A
On-state resistance: 75mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
auf Bestellung 46 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
5+16.52 EUR
7+ 10.87 EUR
Mindestbestellmenge: 5
MSC060SMA070S 1244153-msc060sma070s
MSC060SMA070S
Hersteller: MICROCHIP (MICROSEMI)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 700V; 26A; Idm: 93A; 130W; D3PAK
Polarisation: unipolar
Drain-source voltage: 700V
Power dissipation: 130W
Case: D3PAK
Mounting: SMD
Gate charge: 56nC
Technology: SiC
Kind of channel: enhanced
Drain current: 26A
Pulsed drain current: 93A
On-state resistance: 75mΩ
Type of transistor: N-MOSFET
auf Bestellung 50 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
5+17.59 EUR
6+ 12.24 EUR
7+ 11.57 EUR
Mindestbestellmenge: 5
MSC060SMA070S 1244153-msc060sma070s
MSC060SMA070S
Hersteller: MICROCHIP (MICROSEMI)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 700V; 26A; Idm: 93A; 130W; D3PAK
Polarisation: unipolar
Drain-source voltage: 700V
Power dissipation: 130W
Case: D3PAK
Mounting: SMD
Gate charge: 56nC
Technology: SiC
Kind of channel: enhanced
Drain current: 26A
Pulsed drain current: 93A
On-state resistance: 75mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
auf Bestellung 50 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
5+17.59 EUR
6+ 12.24 EUR
7+ 11.57 EUR
Mindestbestellmenge: 5
MSC080SMA120B 1243494-msc080sma120b-datasheet
MSC080SMA120B
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 26A; Idm: 91A; 200W
Polarisation: unipolar
Drain-source voltage: 1.2kV
Power dissipation: 200W
Case: TO247-3
Mounting: THT
Gate charge: 64nC
Technology: SiC
Kind of channel: enhanced
Drain current: 26A
Pulsed drain current: 91A
On-state resistance: 0.1Ω
Type of transistor: N-MOSFET
auf Bestellung 6 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
4+17.88 EUR
Mindestbestellmenge: 4
MSC080SMA120B 1243494-msc080sma120b-datasheet
MSC080SMA120B
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 26A; Idm: 91A; 200W
Polarisation: unipolar
Drain-source voltage: 1.2kV
Power dissipation: 200W
Case: TO247-3
Mounting: THT
Gate charge: 64nC
Technology: SiC
Kind of channel: enhanced
Drain current: 26A
Pulsed drain current: 91A
On-state resistance: 0.1Ω
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
auf Bestellung 6 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
4+17.88 EUR
Mindestbestellmenge: 4
MSC080SMA120B4 1244479-msc080sma120b4-datasheet
MSC080SMA120B4
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 26A; Idm: 90A; 200W
Polarisation: unipolar
Drain-source voltage: 1.2kV
Power dissipation: 200W
Case: TO247-4
Mounting: THT
Features of semiconductor devices: Kelvin terminal
Gate charge: 64nC
Technology: SiC
Kind of channel: enhanced
Drain current: 26A
Pulsed drain current: 90A
On-state resistance: 0.1Ω
Type of transistor: N-MOSFET
auf Bestellung 35 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
5+15.76 EUR
Mindestbestellmenge: 5
MSC080SMA120B4 1244479-msc080sma120b4-datasheet
MSC080SMA120B4
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 26A; Idm: 90A; 200W
Polarisation: unipolar
Drain-source voltage: 1.2kV
Power dissipation: 200W
Case: TO247-4
Mounting: THT
Features of semiconductor devices: Kelvin terminal
Gate charge: 64nC
Technology: SiC
Kind of channel: enhanced
Drain current: 26A
Pulsed drain current: 90A
On-state resistance: 0.1Ω
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
auf Bestellung 35 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
5+15.76 EUR
Mindestbestellmenge: 5
MSC080SMA120J 1244845-msc080sma120j-datasheet
MSC080SMA120J
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 26A; SOT227B; screw; Idm: 91A
Semiconductor structure: single transistor
Drain-source voltage: 1.2kV
Drain current: 26A
On-state resistance: 0.1Ω
Power dissipation: 200W
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Pulsed drain current: 91A
Case: SOT227B
Produkt ist nicht verfügbar
MSC080SMA120J 1244845-msc080sma120j-datasheet
MSC080SMA120J
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 26A; SOT227B; screw; Idm: 91A
Semiconductor structure: single transistor
Drain-source voltage: 1.2kV
Drain current: 26A
On-state resistance: 0.1Ω
Power dissipation: 200W
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Pulsed drain current: 91A
Case: SOT227B
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
MSC080SMA120S 1244748-msc080sma120s-datasheet
MSC080SMA120S
Hersteller: MICROCHIP (MICROSEMI)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 25A; Idm: 87A; 182W
Drain-source voltage: 1.2kV
Drain current: 25A
On-state resistance: 0.1Ω
Type of transistor: N-MOSFET
Power dissipation: 182W
Polarisation: unipolar
Gate charge: 64nC
Technology: SiC
Kind of channel: enhanced
Pulsed drain current: 87A
Mounting: SMD
Case: D3PAK
Produkt ist nicht verfügbar
MSC080SMA120S 1244748-msc080sma120s-datasheet
MSC080SMA120S
Hersteller: MICROCHIP (MICROSEMI)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 25A; Idm: 87A; 182W
Drain-source voltage: 1.2kV
Drain current: 25A
On-state resistance: 0.1Ω
Type of transistor: N-MOSFET
Power dissipation: 182W
Polarisation: unipolar
Gate charge: 64nC
Technology: SiC
Kind of channel: enhanced
Pulsed drain current: 87A
Mounting: SMD
Case: D3PAK
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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