Produkte > MICROCHIP (MICROSEMI) > Alle Produkte des Herstellers MICROCHIP (MICROSEMI) (4177) > Seite 66 nach 70
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MSMBJ12CA | MICROCHIP (MICROSEMI) |
 Category: Bidirectional SMD transil diodesDescription: Diode: TVS; 600W; 14V; 30.2A; bidirectional; ±5%; DO214AA Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 12V Breakdown voltage: 14V Max. forward impulse current: 30.2A Semiconductor structure: bidirectional Tolerance: ±5% Case: DO214AA Mounting: SMD Leakage current: 5µA |
Produkt ist nicht verfügbar |
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MSMBJ12CA | MICROCHIP (MICROSEMI) |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 600W; 14V; 30.2A; bidirectional; ±5%; DO214AA Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 12V Breakdown voltage: 14V Max. forward impulse current: 30.2A Semiconductor structure: bidirectional Tolerance: ±5% Case: DO214AA Mounting: SMD Leakage current: 5µA Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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MSMBJ15A | MICROCHIP (MICROSEMI) |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 600W; 17.6V; 24A; unidirectional; ±5%; DO214AA Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 15V Breakdown voltage: 17.6V Max. forward impulse current: 24A Semiconductor structure: unidirectional Tolerance: ±5% Case: DO214AA Mounting: SMD Leakage current: 1µA |
auf Bestellung 29 Stücke: Lieferzeit 14-21 Tag (e) |
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MSMBJ15A | MICROCHIP (MICROSEMI) |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 600W; 17.6V; 24A; unidirectional; ±5%; DO214AA Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 15V Breakdown voltage: 17.6V Max. forward impulse current: 24A Semiconductor structure: unidirectional Tolerance: ±5% Case: DO214AA Mounting: SMD Leakage current: 1µA Anzahl je Verpackung: 1 Stücke |
auf Bestellung 29 Stücke: Lieferzeit 7-14 Tag (e) |
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MSMBJ45CA | MICROCHIP (MICROSEMI) |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 600W; 52.65V; 8.3A; bidirectional; ±5%; DO214AA Type of diode: TVS Mounting: SMD Tolerance: ±5% Case: DO214AA Semiconductor structure: bidirectional Leakage current: 1µA Max. forward impulse current: 8.3A Peak pulse power dissipation: 0.6kW Max. off-state voltage: 45V Breakdown voltage: 52.65V |
Produkt ist nicht verfügbar |
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MSMBJ45CA | MICROCHIP (MICROSEMI) |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 600W; 52.65V; 8.3A; bidirectional; ±5%; DO214AA Type of diode: TVS Mounting: SMD Tolerance: ±5% Case: DO214AA Semiconductor structure: bidirectional Leakage current: 1µA Max. forward impulse current: 8.3A Peak pulse power dissipation: 0.6kW Max. off-state voltage: 45V Breakdown voltage: 52.65V Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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MSMBJ48A | MICROCHIP (MICROSEMI) |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 600W; 56.1V; 7.7A; unidirectional; ±5%; DO214AA Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 48V Breakdown voltage: 56.1V Max. forward impulse current: 7.7A Semiconductor structure: unidirectional Tolerance: ±5% Case: DO214AA Mounting: SMD Leakage current: 1µA |
auf Bestellung 3 Stücke: Lieferzeit 14-21 Tag (e) |
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MSMBJ48A | MICROCHIP (MICROSEMI) |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 600W; 56.1V; 7.7A; unidirectional; ±5%; DO214AA Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 48V Breakdown voltage: 56.1V Max. forward impulse current: 7.7A Semiconductor structure: unidirectional Tolerance: ±5% Case: DO214AA Mounting: SMD Leakage current: 1µA Anzahl je Verpackung: 1 Stücke |
auf Bestellung 3 Stücke: Lieferzeit 7-14 Tag (e) |
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MSMBJ51A | MICROCHIP (MICROSEMI) |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 600W; 59.7V; 7.3A; unidirectional; ±5%; DO214AA Type of diode: TVS Mounting: SMD Tolerance: ±5% Case: DO214AA Semiconductor structure: unidirectional Leakage current: 1µA Max. forward impulse current: 7.3A Peak pulse power dissipation: 0.6kW Max. off-state voltage: 51V Breakdown voltage: 59.7V |
Produkt ist nicht verfügbar |
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MSMBJ51A | MICROCHIP (MICROSEMI) |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 600W; 59.7V; 7.3A; unidirectional; ±5%; DO214AA Type of diode: TVS Mounting: SMD Tolerance: ±5% Case: DO214AA Semiconductor structure: unidirectional Leakage current: 1µA Max. forward impulse current: 7.3A Peak pulse power dissipation: 0.6kW Max. off-state voltage: 51V Breakdown voltage: 59.7V Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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MSMBJ6.0CAE3 | MICROCHIP (MICROSEMI) |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 600W; 7V; 58.3A; bidirectional; ±5%; DO214AA Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 6V Breakdown voltage: 7V Max. forward impulse current: 58.3A Semiconductor structure: bidirectional Tolerance: ±5% Case: DO214AA Mounting: SMD Leakage current: 0.8mA |
Produkt ist nicht verfügbar |
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MSMBJ6.0CAE3 | MICROCHIP (MICROSEMI) |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 600W; 7V; 58.3A; bidirectional; ±5%; DO214AA Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 6V Breakdown voltage: 7V Max. forward impulse current: 58.3A Semiconductor structure: bidirectional Tolerance: ±5% Case: DO214AA Mounting: SMD Leakage current: 0.8mA Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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MSMBJ8.5CA | MICROCHIP (MICROSEMI) |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 600W; 9.9V; 41.7A; bidirectional; ±5%; DO214AA Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 8.5V Breakdown voltage: 9.9V Max. forward impulse current: 41.7A Semiconductor structure: bidirectional Tolerance: ±5% Case: DO214AA Mounting: SMD Leakage current: 10µA |
Produkt ist nicht verfügbar |
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MSMBJ8.5CA | MICROCHIP (MICROSEMI) |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 600W; 9.9V; 41.7A; bidirectional; ±5%; DO214AA Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 8.5V Breakdown voltage: 9.9V Max. forward impulse current: 41.7A Semiconductor structure: bidirectional Tolerance: ±5% Case: DO214AA Mounting: SMD Leakage current: 10µA Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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MSMBJ9.0A | MICROCHIP (MICROSEMI) |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 600W; 10.6V; 39A; unidirectional; ±5%; DO214AA Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 9V Breakdown voltage: 10.6V Max. forward impulse current: 39A Semiconductor structure: unidirectional Tolerance: ±5% Case: DO214AA Mounting: SMD Leakage current: 5µA |
Produkt ist nicht verfügbar |
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MSMBJ9.0A | MICROCHIP (MICROSEMI) |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 600W; 10.6V; 39A; unidirectional; ±5%; DO214AA Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 9V Breakdown voltage: 10.6V Max. forward impulse current: 39A Semiconductor structure: unidirectional Tolerance: ±5% Case: DO214AA Mounting: SMD Leakage current: 5µA Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| MSMCGLCE18A | MICROCHIP (MICROSEMI) |
MSMCGLCE18A Unidirectional SMD transil diodes |
Produkt ist nicht verfügbar |
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MSMCJ17CA | MICROCHIP (MICROSEMI) |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 1.5kW; 19.9V; 53.3A; bidirectional; ±5%; DO214AB Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 17V Breakdown voltage: 19.9V Max. forward impulse current: 53.3A Semiconductor structure: bidirectional Tolerance: ±5% Case: DO214AB Mounting: SMD Leakage current: 1µA |
Produkt ist nicht verfügbar |
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MSMCJ17CA | MICROCHIP (MICROSEMI) |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 1.5kW; 19.9V; 53.3A; bidirectional; ±5%; DO214AB Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 17V Breakdown voltage: 19.9V Max. forward impulse current: 53.3A Semiconductor structure: bidirectional Tolerance: ±5% Case: DO214AB Mounting: SMD Leakage current: 1µA Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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MSMCJ45CA | MICROCHIP (MICROSEMI) |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 1.5kW; 52.6V; 20.6A; bidirectional; ±5%; DO214AB Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 45V Breakdown voltage: 52.6V Max. forward impulse current: 20.6A Semiconductor structure: bidirectional Tolerance: ±5% Case: DO214AB Mounting: SMD Leakage current: 1µA |
Produkt ist nicht verfügbar |
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MSMCJ45CA | MICROCHIP (MICROSEMI) |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 1.5kW; 52.6V; 20.6A; bidirectional; ±5%; DO214AB Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 45V Breakdown voltage: 52.6V Max. forward impulse current: 20.6A Semiconductor structure: bidirectional Tolerance: ±5% Case: DO214AB Mounting: SMD Leakage current: 1µA Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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MSMCJ8.0CA | MICROCHIP (MICROSEMI) |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 1.5kW; 9.36V; 110.3A; bidirectional; ±5%; DO214AB Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 8V Breakdown voltage: 9.36V Max. forward impulse current: 110.3A Semiconductor structure: bidirectional Tolerance: ±5% Case: DO214AB Mounting: SMD Leakage current: 50µA |
Produkt ist nicht verfügbar |
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MSMCJ8.0CA | MICROCHIP (MICROSEMI) |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 1.5kW; 9.36V; 110.3A; bidirectional; ±5%; DO214AB Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 8V Breakdown voltage: 9.36V Max. forward impulse current: 110.3A Semiconductor structure: bidirectional Tolerance: ±5% Case: DO214AB Mounting: SMD Leakage current: 50µA Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| MSMLJ100CA | MICROCHIP (MICROSEMI) |
MSMLJ100CA Bidirectional SMD transil diodes |
Produkt ist nicht verfügbar |
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MSMLJ12CAe3 | MICROCHIP (MICROSEMI) |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 3kW; 14V; 150.6A; bidirectional; ±5%; DO214AB Type of diode: TVS Peak pulse power dissipation: 3kW Max. off-state voltage: 12V Breakdown voltage: 14V Max. forward impulse current: 150.6A Semiconductor structure: bidirectional Tolerance: ±5% Case: DO214AB Mounting: SMD Leakage current: 5µA |
Produkt ist nicht verfügbar |
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MSMLJ12CAe3 | MICROCHIP (MICROSEMI) |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 3kW; 14V; 150.6A; bidirectional; ±5%; DO214AB Type of diode: TVS Peak pulse power dissipation: 3kW Max. off-state voltage: 12V Breakdown voltage: 14V Max. forward impulse current: 150.6A Semiconductor structure: bidirectional Tolerance: ±5% Case: DO214AB Mounting: SMD Leakage current: 5µA Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| MSMLJ15AE3TR | MICROCHIP (MICROSEMI) | MSMLJ15AE3TR Unidirectional SMD transil diodes |
Produkt ist nicht verfügbar |
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| MSMLJ170CA | MICROCHIP (MICROSEMI) |
MSMLJ170CA Bidirectional SMD transil diodes |
Produkt ist nicht verfügbar |
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MSMLJ24CA | MICROCHIP (MICROSEMI) |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 3kW; 28.1V; 77.2A; bidirectional; ±5%; DO214AB Type of diode: TVS Peak pulse power dissipation: 3kW Max. off-state voltage: 24V Breakdown voltage: 28.1V Max. forward impulse current: 77.2A Semiconductor structure: bidirectional Tolerance: ±5% Case: DO214AB Mounting: SMD Leakage current: 2µA |
Produkt ist nicht verfügbar |
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MSMLJ24CA | MICROCHIP (MICROSEMI) |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 3kW; 28.1V; 77.2A; bidirectional; ±5%; DO214AB Type of diode: TVS Peak pulse power dissipation: 3kW Max. off-state voltage: 24V Breakdown voltage: 28.1V Max. forward impulse current: 77.2A Semiconductor structure: bidirectional Tolerance: ±5% Case: DO214AB Mounting: SMD Leakage current: 2µA Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| MSMLJ28CA | MICROCHIP (MICROSEMI) |
MSMLJ28CA Bidirectional SMD transil diodes |
Produkt ist nicht verfügbar |
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MSMLJ40A | MICROCHIP (MICROSEMI) |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 3kW; 46.8V; 46.4A; unidirectional; ±5%; DO214AB Type of diode: TVS Peak pulse power dissipation: 3kW Max. off-state voltage: 40V Breakdown voltage: 46.8V Max. forward impulse current: 46.4A Semiconductor structure: unidirectional Tolerance: ±5% Case: DO214AB Mounting: SMD Leakage current: 2µA |
Produkt ist nicht verfügbar |
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MSMLJ40A | MICROCHIP (MICROSEMI) |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 3kW; 46.8V; 46.4A; unidirectional; ±5%; DO214AB Type of diode: TVS Peak pulse power dissipation: 3kW Max. off-state voltage: 40V Breakdown voltage: 46.8V Max. forward impulse current: 46.4A Semiconductor structure: unidirectional Tolerance: ±5% Case: DO214AB Mounting: SMD Leakage current: 2µA Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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MSMLJ40CAE3 | MICROCHIP (MICROSEMI) |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 3kW; 46.8V; 46.4A; bidirectional; ±5%; DO214AB Type of diode: TVS Peak pulse power dissipation: 3kW Max. off-state voltage: 40V Breakdown voltage: 46.8V Max. forward impulse current: 46.4A Semiconductor structure: bidirectional Tolerance: ±5% Case: DO214AB Mounting: SMD Leakage current: 2µA |
Produkt ist nicht verfügbar |
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MSMLJ40CAE3 | MICROCHIP (MICROSEMI) |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 3kW; 46.8V; 46.4A; bidirectional; ±5%; DO214AB Type of diode: TVS Peak pulse power dissipation: 3kW Max. off-state voltage: 40V Breakdown voltage: 46.8V Max. forward impulse current: 46.4A Semiconductor structure: bidirectional Tolerance: ±5% Case: DO214AB Mounting: SMD Leakage current: 2µA Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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MSMLJ45Ae3 | MICROCHIP (MICROSEMI) |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 3kW; 52.7V; 41.2A; unidirectional; ±5%; DO214AB Mounting: SMD Max. off-state voltage: 45V Breakdown voltage: 52.7V Leakage current: 2µA Case: DO214AB Type of diode: TVS Semiconductor structure: unidirectional Max. forward impulse current: 41.2A Peak pulse power dissipation: 3kW Tolerance: ±5% |
Produkt ist nicht verfügbar |
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MSMLJ45Ae3 | MICROCHIP (MICROSEMI) |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 3kW; 52.7V; 41.2A; unidirectional; ±5%; DO214AB Mounting: SMD Max. off-state voltage: 45V Breakdown voltage: 52.7V Leakage current: 2µA Case: DO214AB Type of diode: TVS Semiconductor structure: unidirectional Max. forward impulse current: 41.2A Peak pulse power dissipation: 3kW Tolerance: ±5% |
Produkt ist nicht verfügbar |
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| MSMLJ51Ae3 | MICROCHIP (MICROSEMI) |
MSMLJ51AE3 Unidirectional SMD transil diodes |
Produkt ist nicht verfügbar |
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| MSMLJ51CAe3 | MICROCHIP (MICROSEMI) |
MSMLJ51CAE3 Bidirectional SMD transil diodes |
Produkt ist nicht verfügbar |
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MSMLJ54CAE3 | MICROCHIP (MICROSEMI) |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 3kW; 63.2V; 34.4A; bidirectional; ±5%; DO214AB Leakage current: 2µA Case: DO214AB Type of diode: TVS Semiconductor structure: bidirectional Mounting: SMD Max. forward impulse current: 34.4A Peak pulse power dissipation: 3kW Tolerance: ±5% Max. off-state voltage: 54V Breakdown voltage: 63.2V |
Produkt ist nicht verfügbar |
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MSMLJ54CAE3 | MICROCHIP (MICROSEMI) |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 3kW; 63.2V; 34.4A; bidirectional; ±5%; DO214AB Leakage current: 2µA Case: DO214AB Type of diode: TVS Semiconductor structure: bidirectional Mounting: SMD Max. forward impulse current: 34.4A Peak pulse power dissipation: 3kW Tolerance: ±5% Max. off-state voltage: 54V Breakdown voltage: 63.2V |
Produkt ist nicht verfügbar |
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| MSMLJ58CAE3 | MICROCHIP (MICROSEMI) |
MSMLJ58CAE3 Bidirectional SMD transil diodes |
Produkt ist nicht verfügbar |
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MSMLJ6.0CA | MICROCHIP (MICROSEMI) |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 3kW; 7V; 291.3A; bidirectional; ±5%; DO214AB Type of diode: TVS Peak pulse power dissipation: 3kW Max. off-state voltage: 6V Breakdown voltage: 7V Max. forward impulse current: 291.3A Semiconductor structure: bidirectional Tolerance: ±5% Case: DO214AB Mounting: SMD Leakage current: 1mA |
Produkt ist nicht verfügbar |
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MSMLJ6.0CA | MICROCHIP (MICROSEMI) |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 3kW; 7V; 291.3A; bidirectional; ±5%; DO214AB Type of diode: TVS Peak pulse power dissipation: 3kW Max. off-state voltage: 6V Breakdown voltage: 7V Max. forward impulse current: 291.3A Semiconductor structure: bidirectional Tolerance: ±5% Case: DO214AB Mounting: SMD Leakage current: 1mA Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| MSMLJ78CA | MICROCHIP (MICROSEMI) |
MSMLJ78CA Bidirectional SMD transil diodes |
Produkt ist nicht verfügbar |
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| MSMLJ85A | MICROCHIP (MICROSEMI) |
MSMLJ85A Unidirectional SMD transil diodes |
Produkt ist nicht verfügbar |
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MXSMCJ24Ae3 | MICROCHIP (MICROSEMI) |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 1.5kW; 26.7V; 15.4A; unidirectional; ±5%; DO214AB Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 24V Breakdown voltage: 26.7V Max. forward impulse current: 15.4A Semiconductor structure: unidirectional Tolerance: ±5% Case: DO214AB Mounting: SMD Leakage current: 1µA |
auf Bestellung 5 Stücke: Lieferzeit 14-21 Tag (e) |
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MXSMCJ24Ae3 | MICROCHIP (MICROSEMI) |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 1.5kW; 26.7V; 15.4A; unidirectional; ±5%; DO214AB Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 24V Breakdown voltage: 26.7V Max. forward impulse current: 15.4A Semiconductor structure: unidirectional Tolerance: ±5% Case: DO214AB Mounting: SMD Leakage current: 1µA Anzahl je Verpackung: 1 Stücke |
auf Bestellung 5 Stücke: Lieferzeit 7-14 Tag (e) |
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| PCIE-ROOTPORT-AD | MICROCHIP (MICROSEMI) |
Category: Microchip development kits Description: Dev.kit: Microchip; quick start board,power supply Kind of connector: PCIe Interface: PHY Kit contents: power supply; quick start board Type of development kit: Microchip |
Produkt ist nicht verfügbar |
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| PCIE-ROOTPORT-AD | MICROCHIP (MICROSEMI) |
Category: Microchip development kits Description: Dev.kit: Microchip; quick start board,power supply Kind of connector: PCIe Interface: PHY Kit contents: power supply; quick start board Type of development kit: Microchip Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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PD-3501G/AC-EU | MICROCHIP (MICROSEMI) |
Category: PoE Power Supplies Description: PoE power module; Ch: 1; 1Gbps; 15.4W; Standard: IEEE 802.3af Number of channels: 1 Operating temperature: 0...40°C Application: indoor Data transfer rate: 1Gbps Channel output power: 15.4W Type of module: PoE power module Standard: IEEE 802.3af |
auf Bestellung 5 Stücke: Lieferzeit 14-21 Tag (e) |
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PD-9001GI/DC | MICROCHIP (MICROSEMI) |
Category: PoE Power Supplies Description: PoE power module; Ch: 1; 1Gbps; Usup: 20÷60VDC; 30W; IP30; indoor Data transfer rate: 1Gbps IP rating: IP30 Supply voltage: 20...60V DC Application: indoor Number of channels: 1 Operating temperature: -40...75°C Type of module: PoE power module Standard: IEEE 802.3af/at Channel output power: 30W |
Produkt ist nicht verfügbar |
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PD-9001GO-ET/AC | MICROCHIP (MICROSEMI) |
Category: PoE Power Supplies Description: PoE power module; Ch: 1; 1Gbps; 30W; Standard: IEEE 802.3af/at Data transfer rate: 1Gbps IP rating: IP67 Application: outdoor Number of channels: 1 Operating temperature: -40...65°C Type of module: PoE power module Standard: IEEE 802.3af/at Channel output power: 30W |
Produkt ist nicht verfügbar |
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PD-9001GR/AT/AC-EU | MICROCHIP (MICROSEMI) |
Category: PoE Power Supplies Description: PoE power module; Ch: 1; 1Gbps; 30W; Standard: IEEE 802.3af/at Data transfer rate: 1Gbps Application: indoor Number of channels: 1 Operating temperature: -20...40°C Type of module: PoE power module Standard: IEEE 802.3af/at Channel output power: 30W |
auf Bestellung 19 Stücke: Lieferzeit 14-21 Tag (e) |
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PD-9001GR/AT/AC-US | MICROCHIP (MICROSEMI) |
Category: PoE Power Supplies Description: PoE power module; Ch: 1; 1Gbps; 30W; Standard: IEEE 802.3af/at Data transfer rate: 1Gbps Application: indoor Number of channels: 1 Operating temperature: -20...40°C Type of module: PoE power module Standard: IEEE 802.3af/at Channel output power: 30W |
Produkt ist nicht verfügbar |
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PD-9501GC/AC-EU | MICROCHIP (MICROSEMI) |
Category: PoE Power Supplies Description: PoE power module; Ch: 1; 1Gbps; 60W; indoor Number of channels: 1 Data transfer rate: 1Gbps Application: indoor Channel output power: 60W Type of module: PoE power module Standard: IEEE 802.3af/at; IEEE 802.3bt |
Produkt ist nicht verfügbar |
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PD-9501GC/AC-US | MICROCHIP (MICROSEMI) |
Category: PoE Power Supplies Description: PoE power module; Ch: 1; 1Gbps; 60W; indoor Number of channels: 1 Data transfer rate: 1Gbps Application: indoor Channel output power: 60W Type of module: PoE power module Standard: IEEE 802.3af/at; IEEE 802.3bt |
Produkt ist nicht verfügbar |
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 |
PD-9501GO-ET/AC | MICROCHIP (MICROSEMI) |
Category: PoE Power Supplies Description: PoE power module; Ch: 1; 1Gbps; 60W; Standard: IEEE 802.3af/at Type of module: PoE power module Application: outdoor IP rating: IP67 Operating temperature: -40...65°C Number of channels: 1 Standard: IEEE 802.3af/at Data transfer rate: 1Gbps Channel output power: 60W |
auf Bestellung 5 Stücke: Lieferzeit 14-21 Tag (e) |
|
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 |
PD-9601G/AC-EU | MICROCHIP (MICROSEMI) |
Category: PoE Power Supplies Description: PoE power module; Ch: 1; 1Gbps; 95W; Standard: IEEE 802.3af/at Data transfer rate: 1Gbps Application: indoor Standard: IEEE 802.3af/at Number of channels: 1 Channel output power: 95W Operating temperature: -10...45°C Type of module: PoE power module |
Produkt ist nicht verfügbar |
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| PD-AFATBT-TESTER | MICROCHIP (MICROSEMI) |
Category: PoE Power Supplies Description: PoE analyser; Ch: 1; 1Gbps; Standard: IEEE 802.3af/at; indoor Data transfer rate: 1Gbps Application: indoor Standard: IEEE 802.3af/at Number of channels: 1 Type of module: PoE analyser |
Produkt ist nicht verfügbar |
| MSMBJ12CA |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 14V; 30.2A; bidirectional; ±5%; DO214AA
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 12V
Breakdown voltage: 14V
Max. forward impulse current: 30.2A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AA
Mounting: SMD
Leakage current: 5µA
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 14V; 30.2A; bidirectional; ±5%; DO214AA
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 12V
Breakdown voltage: 14V
Max. forward impulse current: 30.2A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AA
Mounting: SMD
Leakage current: 5µA
Produkt ist nicht verfügbar
| MSMBJ12CA |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 14V; 30.2A; bidirectional; ±5%; DO214AA
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 12V
Breakdown voltage: 14V
Max. forward impulse current: 30.2A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AA
Mounting: SMD
Leakage current: 5µA
Anzahl je Verpackung: 1 Stücke
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 14V; 30.2A; bidirectional; ±5%; DO214AA
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 12V
Breakdown voltage: 14V
Max. forward impulse current: 30.2A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AA
Mounting: SMD
Leakage current: 5µA
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| MSMBJ15A |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 17.6V; 24A; unidirectional; ±5%; DO214AA
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 15V
Breakdown voltage: 17.6V
Max. forward impulse current: 24A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO214AA
Mounting: SMD
Leakage current: 1µA
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 17.6V; 24A; unidirectional; ±5%; DO214AA
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 15V
Breakdown voltage: 17.6V
Max. forward impulse current: 24A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO214AA
Mounting: SMD
Leakage current: 1µA
auf Bestellung 29 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 29+ | 2.46 EUR |
| MSMBJ15A |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 17.6V; 24A; unidirectional; ±5%; DO214AA
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 15V
Breakdown voltage: 17.6V
Max. forward impulse current: 24A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO214AA
Mounting: SMD
Leakage current: 1µA
Anzahl je Verpackung: 1 Stücke
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 17.6V; 24A; unidirectional; ±5%; DO214AA
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 15V
Breakdown voltage: 17.6V
Max. forward impulse current: 24A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO214AA
Mounting: SMD
Leakage current: 1µA
Anzahl je Verpackung: 1 Stücke
auf Bestellung 29 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 29+ | 2.46 EUR |
| 31+ | 2.3 EUR |
| 100+ | 1.37 EUR |
| MSMBJ45CA |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 52.65V; 8.3A; bidirectional; ±5%; DO214AA
Type of diode: TVS
Mounting: SMD
Tolerance: ±5%
Case: DO214AA
Semiconductor structure: bidirectional
Leakage current: 1µA
Max. forward impulse current: 8.3A
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 45V
Breakdown voltage: 52.65V
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 52.65V; 8.3A; bidirectional; ±5%; DO214AA
Type of diode: TVS
Mounting: SMD
Tolerance: ±5%
Case: DO214AA
Semiconductor structure: bidirectional
Leakage current: 1µA
Max. forward impulse current: 8.3A
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 45V
Breakdown voltage: 52.65V
Produkt ist nicht verfügbar
| MSMBJ45CA |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 52.65V; 8.3A; bidirectional; ±5%; DO214AA
Type of diode: TVS
Mounting: SMD
Tolerance: ±5%
Case: DO214AA
Semiconductor structure: bidirectional
Leakage current: 1µA
Max. forward impulse current: 8.3A
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 45V
Breakdown voltage: 52.65V
Anzahl je Verpackung: 1 Stücke
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 52.65V; 8.3A; bidirectional; ±5%; DO214AA
Type of diode: TVS
Mounting: SMD
Tolerance: ±5%
Case: DO214AA
Semiconductor structure: bidirectional
Leakage current: 1µA
Max. forward impulse current: 8.3A
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 45V
Breakdown voltage: 52.65V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| MSMBJ48A |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 56.1V; 7.7A; unidirectional; ±5%; DO214AA
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 48V
Breakdown voltage: 56.1V
Max. forward impulse current: 7.7A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO214AA
Mounting: SMD
Leakage current: 1µA
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 56.1V; 7.7A; unidirectional; ±5%; DO214AA
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 48V
Breakdown voltage: 56.1V
Max. forward impulse current: 7.7A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO214AA
Mounting: SMD
Leakage current: 1µA
auf Bestellung 3 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 3+ | 23.84 EUR |
| MSMBJ48A |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 56.1V; 7.7A; unidirectional; ±5%; DO214AA
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 48V
Breakdown voltage: 56.1V
Max. forward impulse current: 7.7A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO214AA
Mounting: SMD
Leakage current: 1µA
Anzahl je Verpackung: 1 Stücke
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 56.1V; 7.7A; unidirectional; ±5%; DO214AA
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 48V
Breakdown voltage: 56.1V
Max. forward impulse current: 7.7A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO214AA
Mounting: SMD
Leakage current: 1µA
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 3+ | 23.84 EUR |
| 5+ | 14.3 EUR |
| MSMBJ51A |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 59.7V; 7.3A; unidirectional; ±5%; DO214AA
Type of diode: TVS
Mounting: SMD
Tolerance: ±5%
Case: DO214AA
Semiconductor structure: unidirectional
Leakage current: 1µA
Max. forward impulse current: 7.3A
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 51V
Breakdown voltage: 59.7V
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 59.7V; 7.3A; unidirectional; ±5%; DO214AA
Type of diode: TVS
Mounting: SMD
Tolerance: ±5%
Case: DO214AA
Semiconductor structure: unidirectional
Leakage current: 1µA
Max. forward impulse current: 7.3A
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 51V
Breakdown voltage: 59.7V
Produkt ist nicht verfügbar
| MSMBJ51A |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 59.7V; 7.3A; unidirectional; ±5%; DO214AA
Type of diode: TVS
Mounting: SMD
Tolerance: ±5%
Case: DO214AA
Semiconductor structure: unidirectional
Leakage current: 1µA
Max. forward impulse current: 7.3A
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 51V
Breakdown voltage: 59.7V
Anzahl je Verpackung: 1 Stücke
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 59.7V; 7.3A; unidirectional; ±5%; DO214AA
Type of diode: TVS
Mounting: SMD
Tolerance: ±5%
Case: DO214AA
Semiconductor structure: unidirectional
Leakage current: 1µA
Max. forward impulse current: 7.3A
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 51V
Breakdown voltage: 59.7V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| MSMBJ6.0CAE3 |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 7V; 58.3A; bidirectional; ±5%; DO214AA
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 6V
Breakdown voltage: 7V
Max. forward impulse current: 58.3A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AA
Mounting: SMD
Leakage current: 0.8mA
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 7V; 58.3A; bidirectional; ±5%; DO214AA
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 6V
Breakdown voltage: 7V
Max. forward impulse current: 58.3A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AA
Mounting: SMD
Leakage current: 0.8mA
Produkt ist nicht verfügbar
| MSMBJ6.0CAE3 |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 7V; 58.3A; bidirectional; ±5%; DO214AA
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 6V
Breakdown voltage: 7V
Max. forward impulse current: 58.3A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AA
Mounting: SMD
Leakage current: 0.8mA
Anzahl je Verpackung: 1 Stücke
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 7V; 58.3A; bidirectional; ±5%; DO214AA
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 6V
Breakdown voltage: 7V
Max. forward impulse current: 58.3A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AA
Mounting: SMD
Leakage current: 0.8mA
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| MSMBJ8.5CA |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 9.9V; 41.7A; bidirectional; ±5%; DO214AA
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 8.5V
Breakdown voltage: 9.9V
Max. forward impulse current: 41.7A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AA
Mounting: SMD
Leakage current: 10µA
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 9.9V; 41.7A; bidirectional; ±5%; DO214AA
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 8.5V
Breakdown voltage: 9.9V
Max. forward impulse current: 41.7A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AA
Mounting: SMD
Leakage current: 10µA
Produkt ist nicht verfügbar
| MSMBJ8.5CA |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 9.9V; 41.7A; bidirectional; ±5%; DO214AA
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 8.5V
Breakdown voltage: 9.9V
Max. forward impulse current: 41.7A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AA
Mounting: SMD
Leakage current: 10µA
Anzahl je Verpackung: 1 Stücke
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 9.9V; 41.7A; bidirectional; ±5%; DO214AA
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 8.5V
Breakdown voltage: 9.9V
Max. forward impulse current: 41.7A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AA
Mounting: SMD
Leakage current: 10µA
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| MSMBJ9.0A |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 10.6V; 39A; unidirectional; ±5%; DO214AA
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 9V
Breakdown voltage: 10.6V
Max. forward impulse current: 39A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO214AA
Mounting: SMD
Leakage current: 5µA
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 10.6V; 39A; unidirectional; ±5%; DO214AA
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 9V
Breakdown voltage: 10.6V
Max. forward impulse current: 39A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO214AA
Mounting: SMD
Leakage current: 5µA
Produkt ist nicht verfügbar
| MSMBJ9.0A |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 10.6V; 39A; unidirectional; ±5%; DO214AA
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 9V
Breakdown voltage: 10.6V
Max. forward impulse current: 39A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO214AA
Mounting: SMD
Leakage current: 5µA
Anzahl je Verpackung: 1 Stücke
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 10.6V; 39A; unidirectional; ±5%; DO214AA
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 9V
Breakdown voltage: 10.6V
Max. forward impulse current: 39A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO214AA
Mounting: SMD
Leakage current: 5µA
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| MSMCGLCE18A |
|
Hersteller: MICROCHIP (MICROSEMI)
MSMCGLCE18A Unidirectional SMD transil diodes
MSMCGLCE18A Unidirectional SMD transil diodes
Produkt ist nicht verfügbar
| MSMCJ17CA |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 19.9V; 53.3A; bidirectional; ±5%; DO214AB
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 17V
Breakdown voltage: 19.9V
Max. forward impulse current: 53.3A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AB
Mounting: SMD
Leakage current: 1µA
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 19.9V; 53.3A; bidirectional; ±5%; DO214AB
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 17V
Breakdown voltage: 19.9V
Max. forward impulse current: 53.3A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AB
Mounting: SMD
Leakage current: 1µA
Produkt ist nicht verfügbar
| MSMCJ17CA |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 19.9V; 53.3A; bidirectional; ±5%; DO214AB
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 17V
Breakdown voltage: 19.9V
Max. forward impulse current: 53.3A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AB
Mounting: SMD
Leakage current: 1µA
Anzahl je Verpackung: 1 Stücke
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 19.9V; 53.3A; bidirectional; ±5%; DO214AB
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 17V
Breakdown voltage: 19.9V
Max. forward impulse current: 53.3A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AB
Mounting: SMD
Leakage current: 1µA
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| MSMCJ45CA |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 52.6V; 20.6A; bidirectional; ±5%; DO214AB
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 45V
Breakdown voltage: 52.6V
Max. forward impulse current: 20.6A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AB
Mounting: SMD
Leakage current: 1µA
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 52.6V; 20.6A; bidirectional; ±5%; DO214AB
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 45V
Breakdown voltage: 52.6V
Max. forward impulse current: 20.6A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AB
Mounting: SMD
Leakage current: 1µA
Produkt ist nicht verfügbar
| MSMCJ45CA |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 52.6V; 20.6A; bidirectional; ±5%; DO214AB
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 45V
Breakdown voltage: 52.6V
Max. forward impulse current: 20.6A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AB
Mounting: SMD
Leakage current: 1µA
Anzahl je Verpackung: 1 Stücke
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 52.6V; 20.6A; bidirectional; ±5%; DO214AB
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 45V
Breakdown voltage: 52.6V
Max. forward impulse current: 20.6A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AB
Mounting: SMD
Leakage current: 1µA
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| MSMCJ8.0CA |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 9.36V; 110.3A; bidirectional; ±5%; DO214AB
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 8V
Breakdown voltage: 9.36V
Max. forward impulse current: 110.3A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AB
Mounting: SMD
Leakage current: 50µA
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 9.36V; 110.3A; bidirectional; ±5%; DO214AB
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 8V
Breakdown voltage: 9.36V
Max. forward impulse current: 110.3A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AB
Mounting: SMD
Leakage current: 50µA
Produkt ist nicht verfügbar
| MSMCJ8.0CA |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 9.36V; 110.3A; bidirectional; ±5%; DO214AB
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 8V
Breakdown voltage: 9.36V
Max. forward impulse current: 110.3A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AB
Mounting: SMD
Leakage current: 50µA
Anzahl je Verpackung: 1 Stücke
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 9.36V; 110.3A; bidirectional; ±5%; DO214AB
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 8V
Breakdown voltage: 9.36V
Max. forward impulse current: 110.3A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AB
Mounting: SMD
Leakage current: 50µA
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| MSMLJ100CA |
|
Hersteller: MICROCHIP (MICROSEMI)
MSMLJ100CA Bidirectional SMD transil diodes
MSMLJ100CA Bidirectional SMD transil diodes
Produkt ist nicht verfügbar
| MSMLJ12CAe3 |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 3kW; 14V; 150.6A; bidirectional; ±5%; DO214AB
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 12V
Breakdown voltage: 14V
Max. forward impulse current: 150.6A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AB
Mounting: SMD
Leakage current: 5µA
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 3kW; 14V; 150.6A; bidirectional; ±5%; DO214AB
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 12V
Breakdown voltage: 14V
Max. forward impulse current: 150.6A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AB
Mounting: SMD
Leakage current: 5µA
Produkt ist nicht verfügbar
| MSMLJ12CAe3 |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 3kW; 14V; 150.6A; bidirectional; ±5%; DO214AB
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 12V
Breakdown voltage: 14V
Max. forward impulse current: 150.6A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AB
Mounting: SMD
Leakage current: 5µA
Anzahl je Verpackung: 1 Stücke
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 3kW; 14V; 150.6A; bidirectional; ±5%; DO214AB
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 12V
Breakdown voltage: 14V
Max. forward impulse current: 150.6A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AB
Mounting: SMD
Leakage current: 5µA
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| MSMLJ15AE3TR |
Hersteller: MICROCHIP (MICROSEMI)
MSMLJ15AE3TR Unidirectional SMD transil diodes
MSMLJ15AE3TR Unidirectional SMD transil diodes
Produkt ist nicht verfügbar
| MSMLJ170CA |
|
Hersteller: MICROCHIP (MICROSEMI)
MSMLJ170CA Bidirectional SMD transil diodes
MSMLJ170CA Bidirectional SMD transil diodes
Produkt ist nicht verfügbar
| MSMLJ24CA |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 3kW; 28.1V; 77.2A; bidirectional; ±5%; DO214AB
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 24V
Breakdown voltage: 28.1V
Max. forward impulse current: 77.2A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AB
Mounting: SMD
Leakage current: 2µA
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 3kW; 28.1V; 77.2A; bidirectional; ±5%; DO214AB
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 24V
Breakdown voltage: 28.1V
Max. forward impulse current: 77.2A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AB
Mounting: SMD
Leakage current: 2µA
Produkt ist nicht verfügbar
| MSMLJ24CA |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 3kW; 28.1V; 77.2A; bidirectional; ±5%; DO214AB
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 24V
Breakdown voltage: 28.1V
Max. forward impulse current: 77.2A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AB
Mounting: SMD
Leakage current: 2µA
Anzahl je Verpackung: 1 Stücke
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 3kW; 28.1V; 77.2A; bidirectional; ±5%; DO214AB
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 24V
Breakdown voltage: 28.1V
Max. forward impulse current: 77.2A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AB
Mounting: SMD
Leakage current: 2µA
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| MSMLJ28CA |
|
Hersteller: MICROCHIP (MICROSEMI)
MSMLJ28CA Bidirectional SMD transil diodes
MSMLJ28CA Bidirectional SMD transil diodes
Produkt ist nicht verfügbar
| MSMLJ40A |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 3kW; 46.8V; 46.4A; unidirectional; ±5%; DO214AB
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 40V
Breakdown voltage: 46.8V
Max. forward impulse current: 46.4A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO214AB
Mounting: SMD
Leakage current: 2µA
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 3kW; 46.8V; 46.4A; unidirectional; ±5%; DO214AB
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 40V
Breakdown voltage: 46.8V
Max. forward impulse current: 46.4A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO214AB
Mounting: SMD
Leakage current: 2µA
Produkt ist nicht verfügbar
| MSMLJ40A |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 3kW; 46.8V; 46.4A; unidirectional; ±5%; DO214AB
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 40V
Breakdown voltage: 46.8V
Max. forward impulse current: 46.4A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO214AB
Mounting: SMD
Leakage current: 2µA
Anzahl je Verpackung: 1 Stücke
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 3kW; 46.8V; 46.4A; unidirectional; ±5%; DO214AB
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 40V
Breakdown voltage: 46.8V
Max. forward impulse current: 46.4A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO214AB
Mounting: SMD
Leakage current: 2µA
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| MSMLJ40CAE3 |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 3kW; 46.8V; 46.4A; bidirectional; ±5%; DO214AB
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 40V
Breakdown voltage: 46.8V
Max. forward impulse current: 46.4A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AB
Mounting: SMD
Leakage current: 2µA
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 3kW; 46.8V; 46.4A; bidirectional; ±5%; DO214AB
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 40V
Breakdown voltage: 46.8V
Max. forward impulse current: 46.4A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AB
Mounting: SMD
Leakage current: 2µA
Produkt ist nicht verfügbar
| MSMLJ40CAE3 |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 3kW; 46.8V; 46.4A; bidirectional; ±5%; DO214AB
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 40V
Breakdown voltage: 46.8V
Max. forward impulse current: 46.4A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AB
Mounting: SMD
Leakage current: 2µA
Anzahl je Verpackung: 1 Stücke
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 3kW; 46.8V; 46.4A; bidirectional; ±5%; DO214AB
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 40V
Breakdown voltage: 46.8V
Max. forward impulse current: 46.4A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AB
Mounting: SMD
Leakage current: 2µA
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| MSMLJ45Ae3 |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 3kW; 52.7V; 41.2A; unidirectional; ±5%; DO214AB
Mounting: SMD
Max. off-state voltage: 45V
Breakdown voltage: 52.7V
Leakage current: 2µA
Case: DO214AB
Type of diode: TVS
Semiconductor structure: unidirectional
Max. forward impulse current: 41.2A
Peak pulse power dissipation: 3kW
Tolerance: ±5%
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 3kW; 52.7V; 41.2A; unidirectional; ±5%; DO214AB
Mounting: SMD
Max. off-state voltage: 45V
Breakdown voltage: 52.7V
Leakage current: 2µA
Case: DO214AB
Type of diode: TVS
Semiconductor structure: unidirectional
Max. forward impulse current: 41.2A
Peak pulse power dissipation: 3kW
Tolerance: ±5%
Produkt ist nicht verfügbar
| MSMLJ45Ae3 |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 3kW; 52.7V; 41.2A; unidirectional; ±5%; DO214AB
Mounting: SMD
Max. off-state voltage: 45V
Breakdown voltage: 52.7V
Leakage current: 2µA
Case: DO214AB
Type of diode: TVS
Semiconductor structure: unidirectional
Max. forward impulse current: 41.2A
Peak pulse power dissipation: 3kW
Tolerance: ±5%
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 3kW; 52.7V; 41.2A; unidirectional; ±5%; DO214AB
Mounting: SMD
Max. off-state voltage: 45V
Breakdown voltage: 52.7V
Leakage current: 2µA
Case: DO214AB
Type of diode: TVS
Semiconductor structure: unidirectional
Max. forward impulse current: 41.2A
Peak pulse power dissipation: 3kW
Tolerance: ±5%
Produkt ist nicht verfügbar
| MSMLJ51Ae3 |
|
Hersteller: MICROCHIP (MICROSEMI)
MSMLJ51AE3 Unidirectional SMD transil diodes
MSMLJ51AE3 Unidirectional SMD transil diodes
Produkt ist nicht verfügbar
| MSMLJ51CAe3 |
|
Hersteller: MICROCHIP (MICROSEMI)
MSMLJ51CAE3 Bidirectional SMD transil diodes
MSMLJ51CAE3 Bidirectional SMD transil diodes
Produkt ist nicht verfügbar
| MSMLJ54CAE3 |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 3kW; 63.2V; 34.4A; bidirectional; ±5%; DO214AB
Leakage current: 2µA
Case: DO214AB
Type of diode: TVS
Semiconductor structure: bidirectional
Mounting: SMD
Max. forward impulse current: 34.4A
Peak pulse power dissipation: 3kW
Tolerance: ±5%
Max. off-state voltage: 54V
Breakdown voltage: 63.2V
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 3kW; 63.2V; 34.4A; bidirectional; ±5%; DO214AB
Leakage current: 2µA
Case: DO214AB
Type of diode: TVS
Semiconductor structure: bidirectional
Mounting: SMD
Max. forward impulse current: 34.4A
Peak pulse power dissipation: 3kW
Tolerance: ±5%
Max. off-state voltage: 54V
Breakdown voltage: 63.2V
Produkt ist nicht verfügbar
| MSMLJ54CAE3 |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 3kW; 63.2V; 34.4A; bidirectional; ±5%; DO214AB
Leakage current: 2µA
Case: DO214AB
Type of diode: TVS
Semiconductor structure: bidirectional
Mounting: SMD
Max. forward impulse current: 34.4A
Peak pulse power dissipation: 3kW
Tolerance: ±5%
Max. off-state voltage: 54V
Breakdown voltage: 63.2V
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 3kW; 63.2V; 34.4A; bidirectional; ±5%; DO214AB
Leakage current: 2µA
Case: DO214AB
Type of diode: TVS
Semiconductor structure: bidirectional
Mounting: SMD
Max. forward impulse current: 34.4A
Peak pulse power dissipation: 3kW
Tolerance: ±5%
Max. off-state voltage: 54V
Breakdown voltage: 63.2V
Produkt ist nicht verfügbar
| MSMLJ58CAE3 |
|
Hersteller: MICROCHIP (MICROSEMI)
MSMLJ58CAE3 Bidirectional SMD transil diodes
MSMLJ58CAE3 Bidirectional SMD transil diodes
Produkt ist nicht verfügbar
| MSMLJ6.0CA |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 3kW; 7V; 291.3A; bidirectional; ±5%; DO214AB
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 6V
Breakdown voltage: 7V
Max. forward impulse current: 291.3A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AB
Mounting: SMD
Leakage current: 1mA
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 3kW; 7V; 291.3A; bidirectional; ±5%; DO214AB
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 6V
Breakdown voltage: 7V
Max. forward impulse current: 291.3A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AB
Mounting: SMD
Leakage current: 1mA
Produkt ist nicht verfügbar
| MSMLJ6.0CA |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 3kW; 7V; 291.3A; bidirectional; ±5%; DO214AB
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 6V
Breakdown voltage: 7V
Max. forward impulse current: 291.3A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AB
Mounting: SMD
Leakage current: 1mA
Anzahl je Verpackung: 1 Stücke
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 3kW; 7V; 291.3A; bidirectional; ±5%; DO214AB
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 6V
Breakdown voltage: 7V
Max. forward impulse current: 291.3A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AB
Mounting: SMD
Leakage current: 1mA
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| MSMLJ78CA |
|
Hersteller: MICROCHIP (MICROSEMI)
MSMLJ78CA Bidirectional SMD transil diodes
MSMLJ78CA Bidirectional SMD transil diodes
Produkt ist nicht verfügbar
| MSMLJ85A |
|
Hersteller: MICROCHIP (MICROSEMI)
MSMLJ85A Unidirectional SMD transil diodes
MSMLJ85A Unidirectional SMD transil diodes
Produkt ist nicht verfügbar
| MXSMCJ24Ae3 |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 26.7V; 15.4A; unidirectional; ±5%; DO214AB
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7V
Max. forward impulse current: 15.4A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO214AB
Mounting: SMD
Leakage current: 1µA
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 26.7V; 15.4A; unidirectional; ±5%; DO214AB
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7V
Max. forward impulse current: 15.4A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO214AB
Mounting: SMD
Leakage current: 1µA
auf Bestellung 5 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 4+ | 18.49 EUR |
| 5+ | 17.85 EUR |
| MXSMCJ24Ae3 |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 26.7V; 15.4A; unidirectional; ±5%; DO214AB
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7V
Max. forward impulse current: 15.4A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO214AB
Mounting: SMD
Leakage current: 1µA
Anzahl je Verpackung: 1 Stücke
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 26.7V; 15.4A; unidirectional; ±5%; DO214AB
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7V
Max. forward impulse current: 15.4A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO214AB
Mounting: SMD
Leakage current: 1µA
Anzahl je Verpackung: 1 Stücke
auf Bestellung 5 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 4+ | 18.49 EUR |
| 5+ | 17.85 EUR |
| PCIE-ROOTPORT-AD |
Hersteller: MICROCHIP (MICROSEMI)
Category: Microchip development kits
Description: Dev.kit: Microchip; quick start board,power supply
Kind of connector: PCIe
Interface: PHY
Kit contents: power supply; quick start board
Type of development kit: Microchip
Category: Microchip development kits
Description: Dev.kit: Microchip; quick start board,power supply
Kind of connector: PCIe
Interface: PHY
Kit contents: power supply; quick start board
Type of development kit: Microchip
Produkt ist nicht verfügbar
| PCIE-ROOTPORT-AD |
Hersteller: MICROCHIP (MICROSEMI)
Category: Microchip development kits
Description: Dev.kit: Microchip; quick start board,power supply
Kind of connector: PCIe
Interface: PHY
Kit contents: power supply; quick start board
Type of development kit: Microchip
Anzahl je Verpackung: 1 Stücke
Category: Microchip development kits
Description: Dev.kit: Microchip; quick start board,power supply
Kind of connector: PCIe
Interface: PHY
Kit contents: power supply; quick start board
Type of development kit: Microchip
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| PD-3501G/AC-EU |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: PoE Power Supplies
Description: PoE power module; Ch: 1; 1Gbps; 15.4W; Standard: IEEE 802.3af
Number of channels: 1
Operating temperature: 0...40°C
Application: indoor
Data transfer rate: 1Gbps
Channel output power: 15.4W
Type of module: PoE power module
Standard: IEEE 802.3af
Category: PoE Power Supplies
Description: PoE power module; Ch: 1; 1Gbps; 15.4W; Standard: IEEE 802.3af
Number of channels: 1
Operating temperature: 0...40°C
Application: indoor
Data transfer rate: 1Gbps
Channel output power: 15.4W
Type of module: PoE power module
Standard: IEEE 802.3af
auf Bestellung 5 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 72.44 EUR |
| PD-9001GI/DC |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: PoE Power Supplies
Description: PoE power module; Ch: 1; 1Gbps; Usup: 20÷60VDC; 30W; IP30; indoor
Data transfer rate: 1Gbps
IP rating: IP30
Supply voltage: 20...60V DC
Application: indoor
Number of channels: 1
Operating temperature: -40...75°C
Type of module: PoE power module
Standard: IEEE 802.3af/at
Channel output power: 30W
Category: PoE Power Supplies
Description: PoE power module; Ch: 1; 1Gbps; Usup: 20÷60VDC; 30W; IP30; indoor
Data transfer rate: 1Gbps
IP rating: IP30
Supply voltage: 20...60V DC
Application: indoor
Number of channels: 1
Operating temperature: -40...75°C
Type of module: PoE power module
Standard: IEEE 802.3af/at
Channel output power: 30W
Produkt ist nicht verfügbar
| PD-9001GO-ET/AC |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: PoE Power Supplies
Description: PoE power module; Ch: 1; 1Gbps; 30W; Standard: IEEE 802.3af/at
Data transfer rate: 1Gbps
IP rating: IP67
Application: outdoor
Number of channels: 1
Operating temperature: -40...65°C
Type of module: PoE power module
Standard: IEEE 802.3af/at
Channel output power: 30W
Category: PoE Power Supplies
Description: PoE power module; Ch: 1; 1Gbps; 30W; Standard: IEEE 802.3af/at
Data transfer rate: 1Gbps
IP rating: IP67
Application: outdoor
Number of channels: 1
Operating temperature: -40...65°C
Type of module: PoE power module
Standard: IEEE 802.3af/at
Channel output power: 30W
Produkt ist nicht verfügbar
| PD-9001GR/AT/AC-EU |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: PoE Power Supplies
Description: PoE power module; Ch: 1; 1Gbps; 30W; Standard: IEEE 802.3af/at
Data transfer rate: 1Gbps
Application: indoor
Number of channels: 1
Operating temperature: -20...40°C
Type of module: PoE power module
Standard: IEEE 802.3af/at
Channel output power: 30W
Category: PoE Power Supplies
Description: PoE power module; Ch: 1; 1Gbps; 30W; Standard: IEEE 802.3af/at
Data transfer rate: 1Gbps
Application: indoor
Number of channels: 1
Operating temperature: -20...40°C
Type of module: PoE power module
Standard: IEEE 802.3af/at
Channel output power: 30W
auf Bestellung 19 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 112.98 EUR |
| 3+ | 111.94 EUR |
| 10+ | 109.45 EUR |
| PD-9001GR/AT/AC-US |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: PoE Power Supplies
Description: PoE power module; Ch: 1; 1Gbps; 30W; Standard: IEEE 802.3af/at
Data transfer rate: 1Gbps
Application: indoor
Number of channels: 1
Operating temperature: -20...40°C
Type of module: PoE power module
Standard: IEEE 802.3af/at
Channel output power: 30W
Category: PoE Power Supplies
Description: PoE power module; Ch: 1; 1Gbps; 30W; Standard: IEEE 802.3af/at
Data transfer rate: 1Gbps
Application: indoor
Number of channels: 1
Operating temperature: -20...40°C
Type of module: PoE power module
Standard: IEEE 802.3af/at
Channel output power: 30W
Produkt ist nicht verfügbar
| PD-9501GC/AC-EU |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: PoE Power Supplies
Description: PoE power module; Ch: 1; 1Gbps; 60W; indoor
Number of channels: 1
Data transfer rate: 1Gbps
Application: indoor
Channel output power: 60W
Type of module: PoE power module
Standard: IEEE 802.3af/at; IEEE 802.3bt
Category: PoE Power Supplies
Description: PoE power module; Ch: 1; 1Gbps; 60W; indoor
Number of channels: 1
Data transfer rate: 1Gbps
Application: indoor
Channel output power: 60W
Type of module: PoE power module
Standard: IEEE 802.3af/at; IEEE 802.3bt
Produkt ist nicht verfügbar
| PD-9501GC/AC-US |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: PoE Power Supplies
Description: PoE power module; Ch: 1; 1Gbps; 60W; indoor
Number of channels: 1
Data transfer rate: 1Gbps
Application: indoor
Channel output power: 60W
Type of module: PoE power module
Standard: IEEE 802.3af/at; IEEE 802.3bt
Category: PoE Power Supplies
Description: PoE power module; Ch: 1; 1Gbps; 60W; indoor
Number of channels: 1
Data transfer rate: 1Gbps
Application: indoor
Channel output power: 60W
Type of module: PoE power module
Standard: IEEE 802.3af/at; IEEE 802.3bt
Produkt ist nicht verfügbar
| PD-9501GO-ET/AC |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: PoE Power Supplies
Description: PoE power module; Ch: 1; 1Gbps; 60W; Standard: IEEE 802.3af/at
Type of module: PoE power module
Application: outdoor
IP rating: IP67
Operating temperature: -40...65°C
Number of channels: 1
Standard: IEEE 802.3af/at
Data transfer rate: 1Gbps
Channel output power: 60W
Category: PoE Power Supplies
Description: PoE power module; Ch: 1; 1Gbps; 60W; Standard: IEEE 802.3af/at
Type of module: PoE power module
Application: outdoor
IP rating: IP67
Operating temperature: -40...65°C
Number of channels: 1
Standard: IEEE 802.3af/at
Data transfer rate: 1Gbps
Channel output power: 60W
auf Bestellung 5 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 312.48 EUR |
| 3+ | 302.59 EUR |
| PD-9601G/AC-EU |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: PoE Power Supplies
Description: PoE power module; Ch: 1; 1Gbps; 95W; Standard: IEEE 802.3af/at
Data transfer rate: 1Gbps
Application: indoor
Standard: IEEE 802.3af/at
Number of channels: 1
Channel output power: 95W
Operating temperature: -10...45°C
Type of module: PoE power module
Category: PoE Power Supplies
Description: PoE power module; Ch: 1; 1Gbps; 95W; Standard: IEEE 802.3af/at
Data transfer rate: 1Gbps
Application: indoor
Standard: IEEE 802.3af/at
Number of channels: 1
Channel output power: 95W
Operating temperature: -10...45°C
Type of module: PoE power module
Produkt ist nicht verfügbar
| PD-AFATBT-TESTER |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: PoE Power Supplies
Description: PoE analyser; Ch: 1; 1Gbps; Standard: IEEE 802.3af/at; indoor
Data transfer rate: 1Gbps
Application: indoor
Standard: IEEE 802.3af/at
Number of channels: 1
Type of module: PoE analyser
Category: PoE Power Supplies
Description: PoE analyser; Ch: 1; 1Gbps; Standard: IEEE 802.3af/at; indoor
Data transfer rate: 1Gbps
Application: indoor
Standard: IEEE 802.3af/at
Number of channels: 1
Type of module: PoE analyser
Produkt ist nicht verfügbar