Produkte > MICROCHIP (MICROSEMI) > Alle Produkte des Herstellers MICROCHIP (MICROSEMI) (4150) > Seite 56 nach 70
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| APTM100H45FT3G | MICROCHIP (MICROSEMI) |
 Category: Transistor modules MOSFETDescription: Module; transistor/transistor; 1kV; 14A; SP3; Press-in PCB; 357W Type of module: MOSFET transistor Mechanical mounting: screw Pulsed drain current: 72A Semiconductor structure: transistor/transistor Drain-source voltage: 1kV Drain current: 14A On-state resistance: 0.54Ω Power dissipation: 357W Electrical mounting: Press-in PCB Technology: FREDFET; POWER MOS 7® Gate-source voltage: ±30V Topology: H-bridge; NTC thermistor Case: SP3 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| APTM100H45SCTG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 1kV; 14A; SP4; Idm: 72A; 357W; screw Type of module: MOSFET transistor Mechanical mounting: screw Pulsed drain current: 72A Semiconductor structure: SiC diode/transistor Drain-source voltage: 1kV Drain current: 14A On-state resistance: 0.54Ω Power dissipation: 357W Electrical mounting: FASTON connectors; screw Technology: POWER MOS 7®; SiC Gate-source voltage: ±30V Topology: H bridge + parrallel diodes; NTC thermistor Case: SP4 |
Produkt ist nicht verfügbar |
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| APTM100H45SCTG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 1kV; 14A; SP4; Idm: 72A; 357W; screw Type of module: MOSFET transistor Mechanical mounting: screw Pulsed drain current: 72A Semiconductor structure: SiC diode/transistor Drain-source voltage: 1kV Drain current: 14A On-state resistance: 0.54Ω Power dissipation: 357W Electrical mounting: FASTON connectors; screw Technology: POWER MOS 7®; SiC Gate-source voltage: ±30V Topology: H bridge + parrallel diodes; NTC thermistor Case: SP4 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| APTM100H45STG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 1kV; 14A; SP4; FASTON connectors,screw Type of module: MOSFET transistor Mechanical mounting: screw Pulsed drain current: 72A Semiconductor structure: diode/transistor Drain-source voltage: 1kV Drain current: 14A On-state resistance: 0.54Ω Power dissipation: 357W Electrical mounting: FASTON connectors; screw Technology: POWER MOS 7® Gate-source voltage: ±30V Topology: H bridge + parrallel diodes + sereies diodes; NTC thermistor Case: SP4 |
Produkt ist nicht verfügbar |
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| APTM100H45STG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 1kV; 14A; SP4; FASTON connectors,screw Type of module: MOSFET transistor Mechanical mounting: screw Pulsed drain current: 72A Semiconductor structure: diode/transistor Drain-source voltage: 1kV Drain current: 14A On-state resistance: 0.54Ω Power dissipation: 357W Electrical mounting: FASTON connectors; screw Technology: POWER MOS 7® Gate-source voltage: ±30V Topology: H bridge + parrallel diodes + sereies diodes; NTC thermistor Case: SP4 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| APTM100H46FT3G | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 1kV; 14A; SP3; Press-in PCB; 357W Type of module: MOSFET transistor Mechanical mounting: screw Pulsed drain current: 120A Semiconductor structure: transistor/transistor Drain-source voltage: 1kV Drain current: 14A On-state resistance: 552mΩ Power dissipation: 357W Electrical mounting: Press-in PCB Technology: POWER MOS 8® Gate-source voltage: ±30V Topology: H-bridge; NTC thermistor Case: SP3 |
Produkt ist nicht verfügbar |
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| APTM100H46FT3G | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 1kV; 14A; SP3; Press-in PCB; 357W Type of module: MOSFET transistor Mechanical mounting: screw Pulsed drain current: 120A Semiconductor structure: transistor/transistor Drain-source voltage: 1kV Drain current: 14A On-state resistance: 552mΩ Power dissipation: 357W Electrical mounting: Press-in PCB Technology: POWER MOS 8® Gate-source voltage: ±30V Topology: H-bridge; NTC thermistor Case: SP3 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| APTM100SK33T1G | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 1kV; 17A; SP1; Press-in PCB; Idm: 140A Technology: POWER MOS 8® Semiconductor structure: diode/transistor Case: SP1 Power dissipation: 390W Mechanical mounting: screw Type of module: MOSFET transistor Gate-source voltage: ±30V Topology: buck chopper; NTC thermistor Pulsed drain current: 140A Drain-source voltage: 1kV Drain current: 17A On-state resistance: 396mΩ Electrical mounting: Press-in PCB |
Produkt ist nicht verfügbar |
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| APTM100SK33T1G | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 1kV; 17A; SP1; Press-in PCB; Idm: 140A Technology: POWER MOS 8® Semiconductor structure: diode/transistor Case: SP1 Power dissipation: 390W Mechanical mounting: screw Type of module: MOSFET transistor Gate-source voltage: ±30V Topology: buck chopper; NTC thermistor Pulsed drain current: 140A Drain-source voltage: 1kV Drain current: 17A On-state resistance: 396mΩ Electrical mounting: Press-in PCB Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| APTM100TA35FPG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 1kV; 17A; SP6P; Press-in PCB; 390W Type of module: MOSFET transistor Mechanical mounting: screw Pulsed drain current: 88A Semiconductor structure: transistor/transistor Drain-source voltage: 1kV Drain current: 17A On-state resistance: 0.42Ω Power dissipation: 390W Electrical mounting: Press-in PCB Technology: FREDFET; POWER MOS 7® Gate-source voltage: ±30V Topology: MOSFET x3 half-bridge Case: SP6P |
Produkt ist nicht verfügbar |
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| APTM100TA35FPG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 1kV; 17A; SP6P; Press-in PCB; 390W Type of module: MOSFET transistor Mechanical mounting: screw Pulsed drain current: 88A Semiconductor structure: transistor/transistor Drain-source voltage: 1kV Drain current: 17A On-state resistance: 0.42Ω Power dissipation: 390W Electrical mounting: Press-in PCB Technology: FREDFET; POWER MOS 7® Gate-source voltage: ±30V Topology: MOSFET x3 half-bridge Case: SP6P Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| APTM100TA35SCTPG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 1kV; 17A; SP6P; Press-in PCB; 390W Type of module: MOSFET transistor Mechanical mounting: screw Pulsed drain current: 88A Semiconductor structure: SiC diode/transistor Drain-source voltage: 1kV Drain current: 17A On-state resistance: 0.42Ω Power dissipation: 390W Electrical mounting: Press-in PCB Technology: POWER MOS 7®; SiC Gate-source voltage: ±30V Topology: NTC thermistor Case: SP6P |
Produkt ist nicht verfügbar |
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| APTM100TA35SCTPG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 1kV; 17A; SP6P; Press-in PCB; 390W Type of module: MOSFET transistor Mechanical mounting: screw Pulsed drain current: 88A Semiconductor structure: SiC diode/transistor Drain-source voltage: 1kV Drain current: 17A On-state resistance: 0.42Ω Power dissipation: 390W Electrical mounting: Press-in PCB Technology: POWER MOS 7®; SiC Gate-source voltage: ±30V Topology: NTC thermistor Case: SP6P Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| APTM100UM45DAG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 1kV; 160A; SP6C; Idm: 860A; 5kW; Ugs: ±30V Type of module: MOSFET transistor Mechanical mounting: screw Pulsed drain current: 860A Semiconductor structure: diode/transistor Drain-source voltage: 1kV Drain current: 160A On-state resistance: 52mΩ Power dissipation: 5kW Electrical mounting: FASTON connectors; screw Technology: POWER MOS 7® Gate-source voltage: ±30V Topology: single transistor + series diode Case: SP6C |
Produkt ist nicht verfügbar |
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| APTM100UM45DAG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 1kV; 160A; SP6C; Idm: 860A; 5kW; Ugs: ±30V Type of module: MOSFET transistor Mechanical mounting: screw Pulsed drain current: 860A Semiconductor structure: diode/transistor Drain-source voltage: 1kV Drain current: 160A On-state resistance: 52mΩ Power dissipation: 5kW Electrical mounting: FASTON connectors; screw Technology: POWER MOS 7® Gate-source voltage: ±30V Topology: single transistor + series diode Case: SP6C Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| APTM100UM45FAG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 1kV; 160A; SP6C; Idm: 860A; 5kW; Ugs: ±30V Type of module: MOSFET transistor Mechanical mounting: screw Pulsed drain current: 860A Semiconductor structure: single transistor Drain-source voltage: 1kV Drain current: 160A On-state resistance: 52mΩ Power dissipation: 5kW Electrical mounting: FASTON connectors; screw Technology: POWER MOS 7® Gate-source voltage: ±30V Case: SP6C |
Produkt ist nicht verfügbar |
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| APTM100UM45FAG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 1kV; 160A; SP6C; Idm: 860A; 5kW; Ugs: ±30V Type of module: MOSFET transistor Mechanical mounting: screw Pulsed drain current: 860A Semiconductor structure: single transistor Drain-source voltage: 1kV Drain current: 160A On-state resistance: 52mΩ Power dissipation: 5kW Electrical mounting: FASTON connectors; screw Technology: POWER MOS 7® Gate-source voltage: ±30V Case: SP6C Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| APTM100UM60FAG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 1kV; 97A; SP6C; Idm: 516A; 2272W; screw Type of module: MOSFET transistor Mechanical mounting: screw Pulsed drain current: 516A Semiconductor structure: single transistor Drain-source voltage: 1kV Drain current: 97A On-state resistance: 70mΩ Power dissipation: 2272W Electrical mounting: FASTON connectors; screw Technology: POWER MOS 7® Gate-source voltage: ±30V Case: SP6C |
Produkt ist nicht verfügbar |
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| APTM100UM60FAG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 1kV; 97A; SP6C; Idm: 516A; 2272W; screw Type of module: MOSFET transistor Mechanical mounting: screw Pulsed drain current: 516A Semiconductor structure: single transistor Drain-source voltage: 1kV Drain current: 97A On-state resistance: 70mΩ Power dissipation: 2272W Electrical mounting: FASTON connectors; screw Technology: POWER MOS 7® Gate-source voltage: ±30V Case: SP6C Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| APTM100UM65DAG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 1kV; 110A; SP6C; Idm: 580A; 3.25kW; screw Type of module: MOSFET transistor Mechanical mounting: screw Pulsed drain current: 580A Semiconductor structure: single transistor Drain-source voltage: 1kV Drain current: 110A On-state resistance: 78mΩ Power dissipation: 3.25kW Electrical mounting: FASTON connectors; screw Technology: POWER MOS 7® Gate-source voltage: ±30V Case: SP6C |
Produkt ist nicht verfügbar |
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| APTM100UM65DAG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 1kV; 110A; SP6C; Idm: 580A; 3.25kW; screw Type of module: MOSFET transistor Mechanical mounting: screw Pulsed drain current: 580A Semiconductor structure: single transistor Drain-source voltage: 1kV Drain current: 110A On-state resistance: 78mΩ Power dissipation: 3.25kW Electrical mounting: FASTON connectors; screw Technology: POWER MOS 7® Gate-source voltage: ±30V Case: SP6C Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| APTM100UM65SAG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 1kV; 110A; SP6C; Idm: 580A; 3.25kW; screw Type of module: MOSFET transistor Mechanical mounting: screw Pulsed drain current: 580A Semiconductor structure: diode/transistor Drain-source voltage: 1kV Drain current: 110A On-state resistance: 78mΩ Power dissipation: 3.25kW Electrical mounting: FASTON connectors; screw Technology: POWER MOS 7® Gate-source voltage: ±30V Topology: single transistor + series diode - parrallel diode Case: SP6C |
Produkt ist nicht verfügbar |
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| APTM100UM65SAG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 1kV; 110A; SP6C; Idm: 580A; 3.25kW; screw Type of module: MOSFET transistor Mechanical mounting: screw Pulsed drain current: 580A Semiconductor structure: diode/transistor Drain-source voltage: 1kV Drain current: 110A On-state resistance: 78mΩ Power dissipation: 3.25kW Electrical mounting: FASTON connectors; screw Technology: POWER MOS 7® Gate-source voltage: ±30V Topology: single transistor + series diode - parrallel diode Case: SP6C Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| APTM100UM65SCAVG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 1kV; 110A; SP6; screw; Idm: 580A Type of module: MOSFET transistor Semiconductor structure: SiC diode/transistor Drain-source voltage: 1kV Drain current: 110A Case: SP6 Topology: single transistor + series diode - parrallel diode Electrical mounting: screw On-state resistance: 78mΩ Pulsed drain current: 580A Power dissipation: 3.25kW Technology: POWER MOS 7®; SiC Gate-source voltage: ±30V Mechanical mounting: screw |
Produkt ist nicht verfügbar |
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| APTM100UM65SCAVG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 1kV; 110A; SP6; screw; Idm: 580A Type of module: MOSFET transistor Semiconductor structure: SiC diode/transistor Drain-source voltage: 1kV Drain current: 110A Case: SP6 Topology: single transistor + series diode - parrallel diode Electrical mounting: screw On-state resistance: 78mΩ Pulsed drain current: 580A Power dissipation: 3.25kW Technology: POWER MOS 7®; SiC Gate-source voltage: ±30V Mechanical mounting: screw Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| APTM10AM02FG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 100V; 370A; SP6C; Idm: 1900A; 1.25kW Power dissipation: 1.25kW Case: SP6C Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: MOSFET transistor Technology: FREDFET; POWER MOS 5® Gate-source voltage: ±30V Topology: MOSFET half-bridge Pulsed drain current: 1900A Semiconductor structure: transistor/transistor Drain-source voltage: 100V Drain current: 370A On-state resistance: 2.5mΩ |
Produkt ist nicht verfügbar |
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| APTM10AM02FG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 100V; 370A; SP6C; Idm: 1900A; 1.25kW Power dissipation: 1.25kW Case: SP6C Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: MOSFET transistor Technology: FREDFET; POWER MOS 5® Gate-source voltage: ±30V Topology: MOSFET half-bridge Pulsed drain current: 1900A Semiconductor structure: transistor/transistor Drain-source voltage: 100V Drain current: 370A On-state resistance: 2.5mΩ Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| APTM10AM05FTG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 100V; 207A; SP4; Idm: 1100A; 780W Type of module: MOSFET transistor Mechanical mounting: screw Pulsed drain current: 1100A Semiconductor structure: transistor/transistor Drain-source voltage: 100V Drain current: 207A On-state resistance: 5mΩ Power dissipation: 780W Electrical mounting: FASTON connectors; screw Technology: FREDFET; POWER MOS 5® Gate-source voltage: ±30V Topology: MOSFET half-bridge; NTC thermistor Case: SP4 |
Produkt ist nicht verfügbar |
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| APTM10AM05FTG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 100V; 207A; SP4; Idm: 1100A; 780W Type of module: MOSFET transistor Mechanical mounting: screw Pulsed drain current: 1100A Semiconductor structure: transistor/transistor Drain-source voltage: 100V Drain current: 207A On-state resistance: 5mΩ Power dissipation: 780W Electrical mounting: FASTON connectors; screw Technology: FREDFET; POWER MOS 5® Gate-source voltage: ±30V Topology: MOSFET half-bridge; NTC thermistor Case: SP4 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| APTM10DAM02G | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 100V; 370A; SP6C; Idm: 1900A; 1.25kW Type of module: MOSFET transistor Semiconductor structure: diode/transistor Drain-source voltage: 100V Drain current: 370A On-state resistance: 2.5mΩ Power dissipation: 1.25kW Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Technology: POWER MOS 5® Gate-source voltage: ±30V Topology: boost chopper Pulsed drain current: 1900A Case: SP6C |
Produkt ist nicht verfügbar |
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| APTM10DAM02G | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 100V; 370A; SP6C; Idm: 1900A; 1.25kW Type of module: MOSFET transistor Semiconductor structure: diode/transistor Drain-source voltage: 100V Drain current: 370A On-state resistance: 2.5mΩ Power dissipation: 1.25kW Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Technology: POWER MOS 5® Gate-source voltage: ±30V Topology: boost chopper Pulsed drain current: 1900A Case: SP6C Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| APTM10DAM05TG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 100V; 207A; SP4; Idm: 1100A; 780W; screw Type of module: MOSFET transistor Semiconductor structure: diode/transistor Drain-source voltage: 100V Drain current: 207A Case: SP4 Topology: boost chopper; NTC thermistor Electrical mounting: FASTON connectors; screw On-state resistance: 5mΩ Pulsed drain current: 1100A Power dissipation: 780W Technology: POWER MOS 5® Gate-source voltage: ±30V Mechanical mounting: screw |
Produkt ist nicht verfügbar |
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| APTM10DAM05TG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 100V; 207A; SP4; Idm: 1100A; 780W; screw Type of module: MOSFET transistor Semiconductor structure: diode/transistor Drain-source voltage: 100V Drain current: 207A Case: SP4 Topology: boost chopper; NTC thermistor Electrical mounting: FASTON connectors; screw On-state resistance: 5mΩ Pulsed drain current: 1100A Power dissipation: 780W Technology: POWER MOS 5® Gate-source voltage: ±30V Mechanical mounting: screw Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| APTM10DHM05G | MICROCHIP (MICROSEMI) |
APTM10DHM05G Transistor modules MOSFET |
Produkt ist nicht verfügbar |
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| APTM10DSKM09T3G | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 100V; 100A; SP3; Press-in PCB; Idm: 430A Type of module: MOSFET transistor Semiconductor structure: diode/transistor Drain-source voltage: 100V Drain current: 100A Case: SP3 Topology: buck chopper x2; NTC thermistor Electrical mounting: Press-in PCB On-state resistance: 10mΩ Pulsed drain current: 430A Power dissipation: 390W Technology: POWER MOS 5® Gate-source voltage: ±30V Mechanical mounting: screw |
Produkt ist nicht verfügbar |
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| APTM10DSKM09T3G | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 100V; 100A; SP3; Press-in PCB; Idm: 430A Type of module: MOSFET transistor Semiconductor structure: diode/transistor Drain-source voltage: 100V Drain current: 100A Case: SP3 Topology: buck chopper x2; NTC thermistor Electrical mounting: Press-in PCB On-state resistance: 10mΩ Pulsed drain current: 430A Power dissipation: 390W Technology: POWER MOS 5® Gate-source voltage: ±30V Mechanical mounting: screw Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| APTM10DSKM19T3G | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 100V; 50A; SP3; Press-in PCB; Idm: 300A Type of module: MOSFET transistor Semiconductor structure: diode/transistor Drain-source voltage: 100V Drain current: 50A Case: SP3 Topology: buck chopper x2; NTC thermistor Electrical mounting: Press-in PCB On-state resistance: 21mΩ Pulsed drain current: 300A Power dissipation: 208W Technology: POWER MOS 5® Gate-source voltage: ±30V Mechanical mounting: screw |
Produkt ist nicht verfügbar |
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| APTM10DSKM19T3G | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 100V; 50A; SP3; Press-in PCB; Idm: 300A Type of module: MOSFET transistor Semiconductor structure: diode/transistor Drain-source voltage: 100V Drain current: 50A Case: SP3 Topology: buck chopper x2; NTC thermistor Electrical mounting: Press-in PCB On-state resistance: 21mΩ Pulsed drain current: 300A Power dissipation: 208W Technology: POWER MOS 5® Gate-source voltage: ±30V Mechanical mounting: screw Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| APTM10DUM02G | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; transistor/transistor,common source; 100V; 370A; SP6C Type of module: MOSFET transistor Semiconductor structure: common source; transistor/transistor Drain-source voltage: 100V Drain current: 370A On-state resistance: 2.5mΩ Power dissipation: 1.25kW Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Technology: POWER MOS 5® Gate-source voltage: ±30V Topology: MOSFET x2 Pulsed drain current: 1900A Case: SP6C |
Produkt ist nicht verfügbar |
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| APTM10DUM02G | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; transistor/transistor,common source; 100V; 370A; SP6C Type of module: MOSFET transistor Semiconductor structure: common source; transistor/transistor Drain-source voltage: 100V Drain current: 370A On-state resistance: 2.5mΩ Power dissipation: 1.25kW Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Technology: POWER MOS 5® Gate-source voltage: ±30V Topology: MOSFET x2 Pulsed drain current: 1900A Case: SP6C Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| APTM10HM05FG | MICROCHIP (MICROSEMI) |
APTM10HM05FG Transistor modules MOSFET |
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| APTM10HM09FT3G | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 100V; 100A; SP3F; Press-in PCB Technology: FREDFET; POWER MOS 5® Drain-source voltage: 100V Drain current: 100A Pulsed drain current: 430A Power dissipation: 390W Case: SP3F Gate-source voltage: ±30V On-state resistance: 10mΩ Semiconductor structure: transistor/transistor Electrical mounting: Press-in PCB Topology: H-bridge; NTC thermistor Mechanical mounting: screw Type of module: MOSFET transistor |
Produkt ist nicht verfügbar |
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| APTM10HM09FT3G | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 100V; 100A; SP3F; Press-in PCB Technology: FREDFET; POWER MOS 5® Drain-source voltage: 100V Drain current: 100A Pulsed drain current: 430A Power dissipation: 390W Case: SP3F Gate-source voltage: ±30V On-state resistance: 10mΩ Semiconductor structure: transistor/transistor Electrical mounting: Press-in PCB Topology: H-bridge; NTC thermistor Mechanical mounting: screw Type of module: MOSFET transistor Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| APTM10HM19FT3G | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 100V; 50A; SP3F; Press-in PCB; 208W Type of module: MOSFET transistor Semiconductor structure: transistor/transistor Drain-source voltage: 100V Drain current: 50A Case: SP3F Topology: H-bridge; NTC thermistor Electrical mounting: Press-in PCB On-state resistance: 21mΩ Pulsed drain current: 300A Power dissipation: 208W Technology: FREDFET; POWER MOS 5® Gate-source voltage: ±30V Mechanical mounting: screw |
Produkt ist nicht verfügbar |
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| APTM10HM19FT3G | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 100V; 50A; SP3F; Press-in PCB; 208W Type of module: MOSFET transistor Semiconductor structure: transistor/transistor Drain-source voltage: 100V Drain current: 50A Case: SP3F Topology: H-bridge; NTC thermistor Electrical mounting: Press-in PCB On-state resistance: 21mΩ Pulsed drain current: 300A Power dissipation: 208W Technology: FREDFET; POWER MOS 5® Gate-source voltage: ±30V Mechanical mounting: screw Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| APTM10SKM02G | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 100V; 370A; SP6C; Topology: buck chopper Type of module: MOSFET transistor Semiconductor structure: diode/transistor Drain-source voltage: 100V Drain current: 370A On-state resistance: 2.5mΩ Power dissipation: 1.25kW Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Technology: POWER MOS 5® Gate-source voltage: ±30V Topology: buck chopper Pulsed drain current: 1900A Case: SP6C |
Produkt ist nicht verfügbar |
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| APTM10SKM02G | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 100V; 370A; SP6C; Topology: buck chopper Type of module: MOSFET transistor Semiconductor structure: diode/transistor Drain-source voltage: 100V Drain current: 370A On-state resistance: 2.5mΩ Power dissipation: 1.25kW Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Technology: POWER MOS 5® Gate-source voltage: ±30V Topology: buck chopper Pulsed drain current: 1900A Case: SP6C Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| APTM10SKM05TG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 100V; 207A; SP4; Idm: 1100A; 780W; screw Semiconductor structure: diode/transistor Case: SP4 Technology: POWER MOS 5® Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: MOSFET transistor Drain current: 207A Gate-source voltage: ±30V Topology: buck chopper; NTC thermistor Pulsed drain current: 1100A Power dissipation: 780W Drain-source voltage: 100V On-state resistance: 5mΩ |
Produkt ist nicht verfügbar |
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| APTM10SKM05TG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 100V; 207A; SP4; Idm: 1100A; 780W; screw Semiconductor structure: diode/transistor Case: SP4 Technology: POWER MOS 5® Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: MOSFET transistor Drain current: 207A Gate-source voltage: ±30V Topology: buck chopper; NTC thermistor Pulsed drain current: 1100A Power dissipation: 780W Drain-source voltage: 100V On-state resistance: 5mΩ Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| APTM10TAM09FPG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 100V; 100A; SP6P; Press-in PCB Technology: FREDFET; POWER MOS 5® Drain-source voltage: 100V Drain current: 100A Pulsed drain current: 430A Power dissipation: 390W Case: SP6P Gate-source voltage: ±30V On-state resistance: 10mΩ Semiconductor structure: transistor/transistor Electrical mounting: Press-in PCB Topology: MOSFET x3 half-bridge Mechanical mounting: screw Type of module: MOSFET transistor |
Produkt ist nicht verfügbar |
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| APTM10TAM09FPG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 100V; 100A; SP6P; Press-in PCB Technology: FREDFET; POWER MOS 5® Drain-source voltage: 100V Drain current: 100A Pulsed drain current: 430A Power dissipation: 390W Case: SP6P Gate-source voltage: ±30V On-state resistance: 10mΩ Semiconductor structure: transistor/transistor Electrical mounting: Press-in PCB Topology: MOSFET x3 half-bridge Mechanical mounting: screw Type of module: MOSFET transistor Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| APTM10TAM19FPG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 100V; 50A; SP6P; Press-in PCB; 208W Technology: FREDFET; POWER MOS 5® Semiconductor structure: transistor/transistor Case: SP6P Power dissipation: 208W Drain-source voltage: 100V Drain current: 50A On-state resistance: 21mΩ Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: MOSFET transistor Gate-source voltage: ±30V Topology: MOSFET x3 half-bridge Pulsed drain current: 300A |
Produkt ist nicht verfügbar |
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| APTM10TAM19FPG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 100V; 50A; SP6P; Press-in PCB; 208W Technology: FREDFET; POWER MOS 5® Semiconductor structure: transistor/transistor Case: SP6P Power dissipation: 208W Drain-source voltage: 100V Drain current: 50A On-state resistance: 21mΩ Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: MOSFET transistor Gate-source voltage: ±30V Topology: MOSFET x3 half-bridge Pulsed drain current: 300A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| APTM10UM01FAG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 100V; 640A; SP6C; Idm: 2200A; 2.5kW Type of module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 100V Drain current: 640A Case: SP6C Electrical mounting: FASTON connectors; screw On-state resistance: 1.6mΩ Pulsed drain current: 2200A Power dissipation: 2.5kW Technology: FREDFET; POWER MOS 5® Gate-source voltage: ±30V Mechanical mounting: screw |
Produkt ist nicht verfügbar |
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| APTM10UM01FAG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 100V; 640A; SP6C; Idm: 2200A; 2.5kW Type of module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 100V Drain current: 640A Case: SP6C Electrical mounting: FASTON connectors; screw On-state resistance: 1.6mΩ Pulsed drain current: 2200A Power dissipation: 2.5kW Technology: FREDFET; POWER MOS 5® Gate-source voltage: ±30V Mechanical mounting: screw Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| APTM10UM02FAG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 100V; 429A; SP6C; Idm: 1900A; 1.66kW Technology: FREDFET; POWER MOS 5® Case: SP6C Drain-source voltage: 100V Drain current: 429A On-state resistance: 2.5mΩ Power dissipation: 1.66kW Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: MOSFET transistor Gate-source voltage: ±30V Pulsed drain current: 1900A Semiconductor structure: single transistor |
Produkt ist nicht verfügbar |
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| APTM10UM02FAG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 100V; 429A; SP6C; Idm: 1900A; 1.66kW Technology: FREDFET; POWER MOS 5® Case: SP6C Drain-source voltage: 100V Drain current: 429A On-state resistance: 2.5mΩ Power dissipation: 1.66kW Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: MOSFET transistor Gate-source voltage: ±30V Pulsed drain current: 1900A Semiconductor structure: single transistor Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| APTM120A15FG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 1.2kV; 45A; SP6C; Idm: 240A; 1.25kW Type of module: MOSFET transistor Mechanical mounting: screw Pulsed drain current: 240A Semiconductor structure: transistor/transistor Drain-source voltage: 1.2kV Drain current: 45A On-state resistance: 0.175Ω Power dissipation: 1.25kW Electrical mounting: FASTON connectors; screw Technology: FREDFET; POWER MOS 7® Gate-source voltage: ±30V Topology: MOSFET half-bridge Case: SP6C |
Produkt ist nicht verfügbar |
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| APTM120A15FG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 1.2kV; 45A; SP6C; Idm: 240A; 1.25kW Type of module: MOSFET transistor Mechanical mounting: screw Pulsed drain current: 240A Semiconductor structure: transistor/transistor Drain-source voltage: 1.2kV Drain current: 45A On-state resistance: 0.175Ω Power dissipation: 1.25kW Electrical mounting: FASTON connectors; screw Technology: FREDFET; POWER MOS 7® Gate-source voltage: ±30V Topology: MOSFET half-bridge Case: SP6C Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| APTM120A20DG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 1.2kV; 37A; SP6C; Idm: 200A; 1.25kW; screw Type of module: MOSFET transistor Mechanical mounting: screw Pulsed drain current: 200A Semiconductor structure: diode/transistor Drain-source voltage: 1.2kV Drain current: 37A On-state resistance: 0.24Ω Power dissipation: 1.25kW Electrical mounting: FASTON connectors; screw Technology: POWER MOS 7® Gate-source voltage: ±30V Topology: MOSFET half-bridge + serial diodes Case: SP6C |
Produkt ist nicht verfügbar |
| APTM100H45FT3G |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1kV; 14A; SP3; Press-in PCB; 357W
Type of module: MOSFET transistor
Mechanical mounting: screw
Pulsed drain current: 72A
Semiconductor structure: transistor/transistor
Drain-source voltage: 1kV
Drain current: 14A
On-state resistance: 0.54Ω
Power dissipation: 357W
Electrical mounting: Press-in PCB
Technology: FREDFET; POWER MOS 7®
Gate-source voltage: ±30V
Topology: H-bridge; NTC thermistor
Case: SP3
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1kV; 14A; SP3; Press-in PCB; 357W
Type of module: MOSFET transistor
Mechanical mounting: screw
Pulsed drain current: 72A
Semiconductor structure: transistor/transistor
Drain-source voltage: 1kV
Drain current: 14A
On-state resistance: 0.54Ω
Power dissipation: 357W
Electrical mounting: Press-in PCB
Technology: FREDFET; POWER MOS 7®
Gate-source voltage: ±30V
Topology: H-bridge; NTC thermistor
Case: SP3
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APTM100H45SCTG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1kV; 14A; SP4; Idm: 72A; 357W; screw
Type of module: MOSFET transistor
Mechanical mounting: screw
Pulsed drain current: 72A
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1kV
Drain current: 14A
On-state resistance: 0.54Ω
Power dissipation: 357W
Electrical mounting: FASTON connectors; screw
Technology: POWER MOS 7®; SiC
Gate-source voltage: ±30V
Topology: H bridge + parrallel diodes; NTC thermistor
Case: SP4
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1kV; 14A; SP4; Idm: 72A; 357W; screw
Type of module: MOSFET transistor
Mechanical mounting: screw
Pulsed drain current: 72A
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1kV
Drain current: 14A
On-state resistance: 0.54Ω
Power dissipation: 357W
Electrical mounting: FASTON connectors; screw
Technology: POWER MOS 7®; SiC
Gate-source voltage: ±30V
Topology: H bridge + parrallel diodes; NTC thermistor
Case: SP4
Produkt ist nicht verfügbar
| APTM100H45SCTG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1kV; 14A; SP4; Idm: 72A; 357W; screw
Type of module: MOSFET transistor
Mechanical mounting: screw
Pulsed drain current: 72A
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1kV
Drain current: 14A
On-state resistance: 0.54Ω
Power dissipation: 357W
Electrical mounting: FASTON connectors; screw
Technology: POWER MOS 7®; SiC
Gate-source voltage: ±30V
Topology: H bridge + parrallel diodes; NTC thermistor
Case: SP4
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1kV; 14A; SP4; Idm: 72A; 357W; screw
Type of module: MOSFET transistor
Mechanical mounting: screw
Pulsed drain current: 72A
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1kV
Drain current: 14A
On-state resistance: 0.54Ω
Power dissipation: 357W
Electrical mounting: FASTON connectors; screw
Technology: POWER MOS 7®; SiC
Gate-source voltage: ±30V
Topology: H bridge + parrallel diodes; NTC thermistor
Case: SP4
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APTM100H45STG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 1kV; 14A; SP4; FASTON connectors,screw
Type of module: MOSFET transistor
Mechanical mounting: screw
Pulsed drain current: 72A
Semiconductor structure: diode/transistor
Drain-source voltage: 1kV
Drain current: 14A
On-state resistance: 0.54Ω
Power dissipation: 357W
Electrical mounting: FASTON connectors; screw
Technology: POWER MOS 7®
Gate-source voltage: ±30V
Topology: H bridge + parrallel diodes + sereies diodes; NTC thermistor
Case: SP4
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 1kV; 14A; SP4; FASTON connectors,screw
Type of module: MOSFET transistor
Mechanical mounting: screw
Pulsed drain current: 72A
Semiconductor structure: diode/transistor
Drain-source voltage: 1kV
Drain current: 14A
On-state resistance: 0.54Ω
Power dissipation: 357W
Electrical mounting: FASTON connectors; screw
Technology: POWER MOS 7®
Gate-source voltage: ±30V
Topology: H bridge + parrallel diodes + sereies diodes; NTC thermistor
Case: SP4
Produkt ist nicht verfügbar
| APTM100H45STG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 1kV; 14A; SP4; FASTON connectors,screw
Type of module: MOSFET transistor
Mechanical mounting: screw
Pulsed drain current: 72A
Semiconductor structure: diode/transistor
Drain-source voltage: 1kV
Drain current: 14A
On-state resistance: 0.54Ω
Power dissipation: 357W
Electrical mounting: FASTON connectors; screw
Technology: POWER MOS 7®
Gate-source voltage: ±30V
Topology: H bridge + parrallel diodes + sereies diodes; NTC thermistor
Case: SP4
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 1kV; 14A; SP4; FASTON connectors,screw
Type of module: MOSFET transistor
Mechanical mounting: screw
Pulsed drain current: 72A
Semiconductor structure: diode/transistor
Drain-source voltage: 1kV
Drain current: 14A
On-state resistance: 0.54Ω
Power dissipation: 357W
Electrical mounting: FASTON connectors; screw
Technology: POWER MOS 7®
Gate-source voltage: ±30V
Topology: H bridge + parrallel diodes + sereies diodes; NTC thermistor
Case: SP4
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APTM100H46FT3G |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1kV; 14A; SP3; Press-in PCB; 357W
Type of module: MOSFET transistor
Mechanical mounting: screw
Pulsed drain current: 120A
Semiconductor structure: transistor/transistor
Drain-source voltage: 1kV
Drain current: 14A
On-state resistance: 552mΩ
Power dissipation: 357W
Electrical mounting: Press-in PCB
Technology: POWER MOS 8®
Gate-source voltage: ±30V
Topology: H-bridge; NTC thermistor
Case: SP3
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1kV; 14A; SP3; Press-in PCB; 357W
Type of module: MOSFET transistor
Mechanical mounting: screw
Pulsed drain current: 120A
Semiconductor structure: transistor/transistor
Drain-source voltage: 1kV
Drain current: 14A
On-state resistance: 552mΩ
Power dissipation: 357W
Electrical mounting: Press-in PCB
Technology: POWER MOS 8®
Gate-source voltage: ±30V
Topology: H-bridge; NTC thermistor
Case: SP3
Produkt ist nicht verfügbar
| APTM100H46FT3G |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1kV; 14A; SP3; Press-in PCB; 357W
Type of module: MOSFET transistor
Mechanical mounting: screw
Pulsed drain current: 120A
Semiconductor structure: transistor/transistor
Drain-source voltage: 1kV
Drain current: 14A
On-state resistance: 552mΩ
Power dissipation: 357W
Electrical mounting: Press-in PCB
Technology: POWER MOS 8®
Gate-source voltage: ±30V
Topology: H-bridge; NTC thermistor
Case: SP3
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1kV; 14A; SP3; Press-in PCB; 357W
Type of module: MOSFET transistor
Mechanical mounting: screw
Pulsed drain current: 120A
Semiconductor structure: transistor/transistor
Drain-source voltage: 1kV
Drain current: 14A
On-state resistance: 552mΩ
Power dissipation: 357W
Electrical mounting: Press-in PCB
Technology: POWER MOS 8®
Gate-source voltage: ±30V
Topology: H-bridge; NTC thermistor
Case: SP3
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APTM100SK33T1G |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 1kV; 17A; SP1; Press-in PCB; Idm: 140A
Technology: POWER MOS 8®
Semiconductor structure: diode/transistor
Case: SP1
Power dissipation: 390W
Mechanical mounting: screw
Type of module: MOSFET transistor
Gate-source voltage: ±30V
Topology: buck chopper; NTC thermistor
Pulsed drain current: 140A
Drain-source voltage: 1kV
Drain current: 17A
On-state resistance: 396mΩ
Electrical mounting: Press-in PCB
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 1kV; 17A; SP1; Press-in PCB; Idm: 140A
Technology: POWER MOS 8®
Semiconductor structure: diode/transistor
Case: SP1
Power dissipation: 390W
Mechanical mounting: screw
Type of module: MOSFET transistor
Gate-source voltage: ±30V
Topology: buck chopper; NTC thermistor
Pulsed drain current: 140A
Drain-source voltage: 1kV
Drain current: 17A
On-state resistance: 396mΩ
Electrical mounting: Press-in PCB
Produkt ist nicht verfügbar
| APTM100SK33T1G |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 1kV; 17A; SP1; Press-in PCB; Idm: 140A
Technology: POWER MOS 8®
Semiconductor structure: diode/transistor
Case: SP1
Power dissipation: 390W
Mechanical mounting: screw
Type of module: MOSFET transistor
Gate-source voltage: ±30V
Topology: buck chopper; NTC thermistor
Pulsed drain current: 140A
Drain-source voltage: 1kV
Drain current: 17A
On-state resistance: 396mΩ
Electrical mounting: Press-in PCB
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 1kV; 17A; SP1; Press-in PCB; Idm: 140A
Technology: POWER MOS 8®
Semiconductor structure: diode/transistor
Case: SP1
Power dissipation: 390W
Mechanical mounting: screw
Type of module: MOSFET transistor
Gate-source voltage: ±30V
Topology: buck chopper; NTC thermistor
Pulsed drain current: 140A
Drain-source voltage: 1kV
Drain current: 17A
On-state resistance: 396mΩ
Electrical mounting: Press-in PCB
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APTM100TA35FPG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1kV; 17A; SP6P; Press-in PCB; 390W
Type of module: MOSFET transistor
Mechanical mounting: screw
Pulsed drain current: 88A
Semiconductor structure: transistor/transistor
Drain-source voltage: 1kV
Drain current: 17A
On-state resistance: 0.42Ω
Power dissipation: 390W
Electrical mounting: Press-in PCB
Technology: FREDFET; POWER MOS 7®
Gate-source voltage: ±30V
Topology: MOSFET x3 half-bridge
Case: SP6P
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1kV; 17A; SP6P; Press-in PCB; 390W
Type of module: MOSFET transistor
Mechanical mounting: screw
Pulsed drain current: 88A
Semiconductor structure: transistor/transistor
Drain-source voltage: 1kV
Drain current: 17A
On-state resistance: 0.42Ω
Power dissipation: 390W
Electrical mounting: Press-in PCB
Technology: FREDFET; POWER MOS 7®
Gate-source voltage: ±30V
Topology: MOSFET x3 half-bridge
Case: SP6P
Produkt ist nicht verfügbar
| APTM100TA35FPG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1kV; 17A; SP6P; Press-in PCB; 390W
Type of module: MOSFET transistor
Mechanical mounting: screw
Pulsed drain current: 88A
Semiconductor structure: transistor/transistor
Drain-source voltage: 1kV
Drain current: 17A
On-state resistance: 0.42Ω
Power dissipation: 390W
Electrical mounting: Press-in PCB
Technology: FREDFET; POWER MOS 7®
Gate-source voltage: ±30V
Topology: MOSFET x3 half-bridge
Case: SP6P
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1kV; 17A; SP6P; Press-in PCB; 390W
Type of module: MOSFET transistor
Mechanical mounting: screw
Pulsed drain current: 88A
Semiconductor structure: transistor/transistor
Drain-source voltage: 1kV
Drain current: 17A
On-state resistance: 0.42Ω
Power dissipation: 390W
Electrical mounting: Press-in PCB
Technology: FREDFET; POWER MOS 7®
Gate-source voltage: ±30V
Topology: MOSFET x3 half-bridge
Case: SP6P
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APTM100TA35SCTPG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1kV; 17A; SP6P; Press-in PCB; 390W
Type of module: MOSFET transistor
Mechanical mounting: screw
Pulsed drain current: 88A
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1kV
Drain current: 17A
On-state resistance: 0.42Ω
Power dissipation: 390W
Electrical mounting: Press-in PCB
Technology: POWER MOS 7®; SiC
Gate-source voltage: ±30V
Topology: NTC thermistor
Case: SP6P
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1kV; 17A; SP6P; Press-in PCB; 390W
Type of module: MOSFET transistor
Mechanical mounting: screw
Pulsed drain current: 88A
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1kV
Drain current: 17A
On-state resistance: 0.42Ω
Power dissipation: 390W
Electrical mounting: Press-in PCB
Technology: POWER MOS 7®; SiC
Gate-source voltage: ±30V
Topology: NTC thermistor
Case: SP6P
Produkt ist nicht verfügbar
| APTM100TA35SCTPG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1kV; 17A; SP6P; Press-in PCB; 390W
Type of module: MOSFET transistor
Mechanical mounting: screw
Pulsed drain current: 88A
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1kV
Drain current: 17A
On-state resistance: 0.42Ω
Power dissipation: 390W
Electrical mounting: Press-in PCB
Technology: POWER MOS 7®; SiC
Gate-source voltage: ±30V
Topology: NTC thermistor
Case: SP6P
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1kV; 17A; SP6P; Press-in PCB; 390W
Type of module: MOSFET transistor
Mechanical mounting: screw
Pulsed drain current: 88A
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1kV
Drain current: 17A
On-state resistance: 0.42Ω
Power dissipation: 390W
Electrical mounting: Press-in PCB
Technology: POWER MOS 7®; SiC
Gate-source voltage: ±30V
Topology: NTC thermistor
Case: SP6P
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APTM100UM45DAG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 1kV; 160A; SP6C; Idm: 860A; 5kW; Ugs: ±30V
Type of module: MOSFET transistor
Mechanical mounting: screw
Pulsed drain current: 860A
Semiconductor structure: diode/transistor
Drain-source voltage: 1kV
Drain current: 160A
On-state resistance: 52mΩ
Power dissipation: 5kW
Electrical mounting: FASTON connectors; screw
Technology: POWER MOS 7®
Gate-source voltage: ±30V
Topology: single transistor + series diode
Case: SP6C
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 1kV; 160A; SP6C; Idm: 860A; 5kW; Ugs: ±30V
Type of module: MOSFET transistor
Mechanical mounting: screw
Pulsed drain current: 860A
Semiconductor structure: diode/transistor
Drain-source voltage: 1kV
Drain current: 160A
On-state resistance: 52mΩ
Power dissipation: 5kW
Electrical mounting: FASTON connectors; screw
Technology: POWER MOS 7®
Gate-source voltage: ±30V
Topology: single transistor + series diode
Case: SP6C
Produkt ist nicht verfügbar
| APTM100UM45DAG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 1kV; 160A; SP6C; Idm: 860A; 5kW; Ugs: ±30V
Type of module: MOSFET transistor
Mechanical mounting: screw
Pulsed drain current: 860A
Semiconductor structure: diode/transistor
Drain-source voltage: 1kV
Drain current: 160A
On-state resistance: 52mΩ
Power dissipation: 5kW
Electrical mounting: FASTON connectors; screw
Technology: POWER MOS 7®
Gate-source voltage: ±30V
Topology: single transistor + series diode
Case: SP6C
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 1kV; 160A; SP6C; Idm: 860A; 5kW; Ugs: ±30V
Type of module: MOSFET transistor
Mechanical mounting: screw
Pulsed drain current: 860A
Semiconductor structure: diode/transistor
Drain-source voltage: 1kV
Drain current: 160A
On-state resistance: 52mΩ
Power dissipation: 5kW
Electrical mounting: FASTON connectors; screw
Technology: POWER MOS 7®
Gate-source voltage: ±30V
Topology: single transistor + series diode
Case: SP6C
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APTM100UM45FAG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 160A; SP6C; Idm: 860A; 5kW; Ugs: ±30V
Type of module: MOSFET transistor
Mechanical mounting: screw
Pulsed drain current: 860A
Semiconductor structure: single transistor
Drain-source voltage: 1kV
Drain current: 160A
On-state resistance: 52mΩ
Power dissipation: 5kW
Electrical mounting: FASTON connectors; screw
Technology: POWER MOS 7®
Gate-source voltage: ±30V
Case: SP6C
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 160A; SP6C; Idm: 860A; 5kW; Ugs: ±30V
Type of module: MOSFET transistor
Mechanical mounting: screw
Pulsed drain current: 860A
Semiconductor structure: single transistor
Drain-source voltage: 1kV
Drain current: 160A
On-state resistance: 52mΩ
Power dissipation: 5kW
Electrical mounting: FASTON connectors; screw
Technology: POWER MOS 7®
Gate-source voltage: ±30V
Case: SP6C
Produkt ist nicht verfügbar
| APTM100UM45FAG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 160A; SP6C; Idm: 860A; 5kW; Ugs: ±30V
Type of module: MOSFET transistor
Mechanical mounting: screw
Pulsed drain current: 860A
Semiconductor structure: single transistor
Drain-source voltage: 1kV
Drain current: 160A
On-state resistance: 52mΩ
Power dissipation: 5kW
Electrical mounting: FASTON connectors; screw
Technology: POWER MOS 7®
Gate-source voltage: ±30V
Case: SP6C
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 160A; SP6C; Idm: 860A; 5kW; Ugs: ±30V
Type of module: MOSFET transistor
Mechanical mounting: screw
Pulsed drain current: 860A
Semiconductor structure: single transistor
Drain-source voltage: 1kV
Drain current: 160A
On-state resistance: 52mΩ
Power dissipation: 5kW
Electrical mounting: FASTON connectors; screw
Technology: POWER MOS 7®
Gate-source voltage: ±30V
Case: SP6C
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APTM100UM60FAG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 97A; SP6C; Idm: 516A; 2272W; screw
Type of module: MOSFET transistor
Mechanical mounting: screw
Pulsed drain current: 516A
Semiconductor structure: single transistor
Drain-source voltage: 1kV
Drain current: 97A
On-state resistance: 70mΩ
Power dissipation: 2272W
Electrical mounting: FASTON connectors; screw
Technology: POWER MOS 7®
Gate-source voltage: ±30V
Case: SP6C
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 97A; SP6C; Idm: 516A; 2272W; screw
Type of module: MOSFET transistor
Mechanical mounting: screw
Pulsed drain current: 516A
Semiconductor structure: single transistor
Drain-source voltage: 1kV
Drain current: 97A
On-state resistance: 70mΩ
Power dissipation: 2272W
Electrical mounting: FASTON connectors; screw
Technology: POWER MOS 7®
Gate-source voltage: ±30V
Case: SP6C
Produkt ist nicht verfügbar
| APTM100UM60FAG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 97A; SP6C; Idm: 516A; 2272W; screw
Type of module: MOSFET transistor
Mechanical mounting: screw
Pulsed drain current: 516A
Semiconductor structure: single transistor
Drain-source voltage: 1kV
Drain current: 97A
On-state resistance: 70mΩ
Power dissipation: 2272W
Electrical mounting: FASTON connectors; screw
Technology: POWER MOS 7®
Gate-source voltage: ±30V
Case: SP6C
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 97A; SP6C; Idm: 516A; 2272W; screw
Type of module: MOSFET transistor
Mechanical mounting: screw
Pulsed drain current: 516A
Semiconductor structure: single transistor
Drain-source voltage: 1kV
Drain current: 97A
On-state resistance: 70mΩ
Power dissipation: 2272W
Electrical mounting: FASTON connectors; screw
Technology: POWER MOS 7®
Gate-source voltage: ±30V
Case: SP6C
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APTM100UM65DAG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 110A; SP6C; Idm: 580A; 3.25kW; screw
Type of module: MOSFET transistor
Mechanical mounting: screw
Pulsed drain current: 580A
Semiconductor structure: single transistor
Drain-source voltage: 1kV
Drain current: 110A
On-state resistance: 78mΩ
Power dissipation: 3.25kW
Electrical mounting: FASTON connectors; screw
Technology: POWER MOS 7®
Gate-source voltage: ±30V
Case: SP6C
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 110A; SP6C; Idm: 580A; 3.25kW; screw
Type of module: MOSFET transistor
Mechanical mounting: screw
Pulsed drain current: 580A
Semiconductor structure: single transistor
Drain-source voltage: 1kV
Drain current: 110A
On-state resistance: 78mΩ
Power dissipation: 3.25kW
Electrical mounting: FASTON connectors; screw
Technology: POWER MOS 7®
Gate-source voltage: ±30V
Case: SP6C
Produkt ist nicht verfügbar
| APTM100UM65DAG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 110A; SP6C; Idm: 580A; 3.25kW; screw
Type of module: MOSFET transistor
Mechanical mounting: screw
Pulsed drain current: 580A
Semiconductor structure: single transistor
Drain-source voltage: 1kV
Drain current: 110A
On-state resistance: 78mΩ
Power dissipation: 3.25kW
Electrical mounting: FASTON connectors; screw
Technology: POWER MOS 7®
Gate-source voltage: ±30V
Case: SP6C
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 110A; SP6C; Idm: 580A; 3.25kW; screw
Type of module: MOSFET transistor
Mechanical mounting: screw
Pulsed drain current: 580A
Semiconductor structure: single transistor
Drain-source voltage: 1kV
Drain current: 110A
On-state resistance: 78mΩ
Power dissipation: 3.25kW
Electrical mounting: FASTON connectors; screw
Technology: POWER MOS 7®
Gate-source voltage: ±30V
Case: SP6C
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APTM100UM65SAG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 1kV; 110A; SP6C; Idm: 580A; 3.25kW; screw
Type of module: MOSFET transistor
Mechanical mounting: screw
Pulsed drain current: 580A
Semiconductor structure: diode/transistor
Drain-source voltage: 1kV
Drain current: 110A
On-state resistance: 78mΩ
Power dissipation: 3.25kW
Electrical mounting: FASTON connectors; screw
Technology: POWER MOS 7®
Gate-source voltage: ±30V
Topology: single transistor + series diode - parrallel diode
Case: SP6C
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 1kV; 110A; SP6C; Idm: 580A; 3.25kW; screw
Type of module: MOSFET transistor
Mechanical mounting: screw
Pulsed drain current: 580A
Semiconductor structure: diode/transistor
Drain-source voltage: 1kV
Drain current: 110A
On-state resistance: 78mΩ
Power dissipation: 3.25kW
Electrical mounting: FASTON connectors; screw
Technology: POWER MOS 7®
Gate-source voltage: ±30V
Topology: single transistor + series diode - parrallel diode
Case: SP6C
Produkt ist nicht verfügbar
| APTM100UM65SAG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 1kV; 110A; SP6C; Idm: 580A; 3.25kW; screw
Type of module: MOSFET transistor
Mechanical mounting: screw
Pulsed drain current: 580A
Semiconductor structure: diode/transistor
Drain-source voltage: 1kV
Drain current: 110A
On-state resistance: 78mΩ
Power dissipation: 3.25kW
Electrical mounting: FASTON connectors; screw
Technology: POWER MOS 7®
Gate-source voltage: ±30V
Topology: single transistor + series diode - parrallel diode
Case: SP6C
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 1kV; 110A; SP6C; Idm: 580A; 3.25kW; screw
Type of module: MOSFET transistor
Mechanical mounting: screw
Pulsed drain current: 580A
Semiconductor structure: diode/transistor
Drain-source voltage: 1kV
Drain current: 110A
On-state resistance: 78mΩ
Power dissipation: 3.25kW
Electrical mounting: FASTON connectors; screw
Technology: POWER MOS 7®
Gate-source voltage: ±30V
Topology: single transistor + series diode - parrallel diode
Case: SP6C
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APTM100UM65SCAVG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1kV; 110A; SP6; screw; Idm: 580A
Type of module: MOSFET transistor
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1kV
Drain current: 110A
Case: SP6
Topology: single transistor + series diode - parrallel diode
Electrical mounting: screw
On-state resistance: 78mΩ
Pulsed drain current: 580A
Power dissipation: 3.25kW
Technology: POWER MOS 7®; SiC
Gate-source voltage: ±30V
Mechanical mounting: screw
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1kV; 110A; SP6; screw; Idm: 580A
Type of module: MOSFET transistor
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1kV
Drain current: 110A
Case: SP6
Topology: single transistor + series diode - parrallel diode
Electrical mounting: screw
On-state resistance: 78mΩ
Pulsed drain current: 580A
Power dissipation: 3.25kW
Technology: POWER MOS 7®; SiC
Gate-source voltage: ±30V
Mechanical mounting: screw
Produkt ist nicht verfügbar
| APTM100UM65SCAVG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1kV; 110A; SP6; screw; Idm: 580A
Type of module: MOSFET transistor
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1kV
Drain current: 110A
Case: SP6
Topology: single transistor + series diode - parrallel diode
Electrical mounting: screw
On-state resistance: 78mΩ
Pulsed drain current: 580A
Power dissipation: 3.25kW
Technology: POWER MOS 7®; SiC
Gate-source voltage: ±30V
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1kV; 110A; SP6; screw; Idm: 580A
Type of module: MOSFET transistor
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1kV
Drain current: 110A
Case: SP6
Topology: single transistor + series diode - parrallel diode
Electrical mounting: screw
On-state resistance: 78mΩ
Pulsed drain current: 580A
Power dissipation: 3.25kW
Technology: POWER MOS 7®; SiC
Gate-source voltage: ±30V
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APTM10AM02FG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 100V; 370A; SP6C; Idm: 1900A; 1.25kW
Power dissipation: 1.25kW
Case: SP6C
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: FREDFET; POWER MOS 5®
Gate-source voltage: ±30V
Topology: MOSFET half-bridge
Pulsed drain current: 1900A
Semiconductor structure: transistor/transistor
Drain-source voltage: 100V
Drain current: 370A
On-state resistance: 2.5mΩ
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 100V; 370A; SP6C; Idm: 1900A; 1.25kW
Power dissipation: 1.25kW
Case: SP6C
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: FREDFET; POWER MOS 5®
Gate-source voltage: ±30V
Topology: MOSFET half-bridge
Pulsed drain current: 1900A
Semiconductor structure: transistor/transistor
Drain-source voltage: 100V
Drain current: 370A
On-state resistance: 2.5mΩ
Produkt ist nicht verfügbar
| APTM10AM02FG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 100V; 370A; SP6C; Idm: 1900A; 1.25kW
Power dissipation: 1.25kW
Case: SP6C
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: FREDFET; POWER MOS 5®
Gate-source voltage: ±30V
Topology: MOSFET half-bridge
Pulsed drain current: 1900A
Semiconductor structure: transistor/transistor
Drain-source voltage: 100V
Drain current: 370A
On-state resistance: 2.5mΩ
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 100V; 370A; SP6C; Idm: 1900A; 1.25kW
Power dissipation: 1.25kW
Case: SP6C
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: FREDFET; POWER MOS 5®
Gate-source voltage: ±30V
Topology: MOSFET half-bridge
Pulsed drain current: 1900A
Semiconductor structure: transistor/transistor
Drain-source voltage: 100V
Drain current: 370A
On-state resistance: 2.5mΩ
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APTM10AM05FTG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 100V; 207A; SP4; Idm: 1100A; 780W
Type of module: MOSFET transistor
Mechanical mounting: screw
Pulsed drain current: 1100A
Semiconductor structure: transistor/transistor
Drain-source voltage: 100V
Drain current: 207A
On-state resistance: 5mΩ
Power dissipation: 780W
Electrical mounting: FASTON connectors; screw
Technology: FREDFET; POWER MOS 5®
Gate-source voltage: ±30V
Topology: MOSFET half-bridge; NTC thermistor
Case: SP4
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 100V; 207A; SP4; Idm: 1100A; 780W
Type of module: MOSFET transistor
Mechanical mounting: screw
Pulsed drain current: 1100A
Semiconductor structure: transistor/transistor
Drain-source voltage: 100V
Drain current: 207A
On-state resistance: 5mΩ
Power dissipation: 780W
Electrical mounting: FASTON connectors; screw
Technology: FREDFET; POWER MOS 5®
Gate-source voltage: ±30V
Topology: MOSFET half-bridge; NTC thermistor
Case: SP4
Produkt ist nicht verfügbar
| APTM10AM05FTG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 100V; 207A; SP4; Idm: 1100A; 780W
Type of module: MOSFET transistor
Mechanical mounting: screw
Pulsed drain current: 1100A
Semiconductor structure: transistor/transistor
Drain-source voltage: 100V
Drain current: 207A
On-state resistance: 5mΩ
Power dissipation: 780W
Electrical mounting: FASTON connectors; screw
Technology: FREDFET; POWER MOS 5®
Gate-source voltage: ±30V
Topology: MOSFET half-bridge; NTC thermistor
Case: SP4
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 100V; 207A; SP4; Idm: 1100A; 780W
Type of module: MOSFET transistor
Mechanical mounting: screw
Pulsed drain current: 1100A
Semiconductor structure: transistor/transistor
Drain-source voltage: 100V
Drain current: 207A
On-state resistance: 5mΩ
Power dissipation: 780W
Electrical mounting: FASTON connectors; screw
Technology: FREDFET; POWER MOS 5®
Gate-source voltage: ±30V
Topology: MOSFET half-bridge; NTC thermistor
Case: SP4
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APTM10DAM02G |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 100V; 370A; SP6C; Idm: 1900A; 1.25kW
Type of module: MOSFET transistor
Semiconductor structure: diode/transistor
Drain-source voltage: 100V
Drain current: 370A
On-state resistance: 2.5mΩ
Power dissipation: 1.25kW
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Technology: POWER MOS 5®
Gate-source voltage: ±30V
Topology: boost chopper
Pulsed drain current: 1900A
Case: SP6C
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 100V; 370A; SP6C; Idm: 1900A; 1.25kW
Type of module: MOSFET transistor
Semiconductor structure: diode/transistor
Drain-source voltage: 100V
Drain current: 370A
On-state resistance: 2.5mΩ
Power dissipation: 1.25kW
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Technology: POWER MOS 5®
Gate-source voltage: ±30V
Topology: boost chopper
Pulsed drain current: 1900A
Case: SP6C
Produkt ist nicht verfügbar
| APTM10DAM02G |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 100V; 370A; SP6C; Idm: 1900A; 1.25kW
Type of module: MOSFET transistor
Semiconductor structure: diode/transistor
Drain-source voltage: 100V
Drain current: 370A
On-state resistance: 2.5mΩ
Power dissipation: 1.25kW
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Technology: POWER MOS 5®
Gate-source voltage: ±30V
Topology: boost chopper
Pulsed drain current: 1900A
Case: SP6C
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 100V; 370A; SP6C; Idm: 1900A; 1.25kW
Type of module: MOSFET transistor
Semiconductor structure: diode/transistor
Drain-source voltage: 100V
Drain current: 370A
On-state resistance: 2.5mΩ
Power dissipation: 1.25kW
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Technology: POWER MOS 5®
Gate-source voltage: ±30V
Topology: boost chopper
Pulsed drain current: 1900A
Case: SP6C
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APTM10DAM05TG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 100V; 207A; SP4; Idm: 1100A; 780W; screw
Type of module: MOSFET transistor
Semiconductor structure: diode/transistor
Drain-source voltage: 100V
Drain current: 207A
Case: SP4
Topology: boost chopper; NTC thermistor
Electrical mounting: FASTON connectors; screw
On-state resistance: 5mΩ
Pulsed drain current: 1100A
Power dissipation: 780W
Technology: POWER MOS 5®
Gate-source voltage: ±30V
Mechanical mounting: screw
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 100V; 207A; SP4; Idm: 1100A; 780W; screw
Type of module: MOSFET transistor
Semiconductor structure: diode/transistor
Drain-source voltage: 100V
Drain current: 207A
Case: SP4
Topology: boost chopper; NTC thermistor
Electrical mounting: FASTON connectors; screw
On-state resistance: 5mΩ
Pulsed drain current: 1100A
Power dissipation: 780W
Technology: POWER MOS 5®
Gate-source voltage: ±30V
Mechanical mounting: screw
Produkt ist nicht verfügbar
| APTM10DAM05TG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 100V; 207A; SP4; Idm: 1100A; 780W; screw
Type of module: MOSFET transistor
Semiconductor structure: diode/transistor
Drain-source voltage: 100V
Drain current: 207A
Case: SP4
Topology: boost chopper; NTC thermistor
Electrical mounting: FASTON connectors; screw
On-state resistance: 5mΩ
Pulsed drain current: 1100A
Power dissipation: 780W
Technology: POWER MOS 5®
Gate-source voltage: ±30V
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 100V; 207A; SP4; Idm: 1100A; 780W; screw
Type of module: MOSFET transistor
Semiconductor structure: diode/transistor
Drain-source voltage: 100V
Drain current: 207A
Case: SP4
Topology: boost chopper; NTC thermistor
Electrical mounting: FASTON connectors; screw
On-state resistance: 5mΩ
Pulsed drain current: 1100A
Power dissipation: 780W
Technology: POWER MOS 5®
Gate-source voltage: ±30V
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APTM10DHM05G |
|
Hersteller: MICROCHIP (MICROSEMI)
APTM10DHM05G Transistor modules MOSFET
APTM10DHM05G Transistor modules MOSFET
Produkt ist nicht verfügbar
| APTM10DSKM09T3G |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 100V; 100A; SP3; Press-in PCB; Idm: 430A
Type of module: MOSFET transistor
Semiconductor structure: diode/transistor
Drain-source voltage: 100V
Drain current: 100A
Case: SP3
Topology: buck chopper x2; NTC thermistor
Electrical mounting: Press-in PCB
On-state resistance: 10mΩ
Pulsed drain current: 430A
Power dissipation: 390W
Technology: POWER MOS 5®
Gate-source voltage: ±30V
Mechanical mounting: screw
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 100V; 100A; SP3; Press-in PCB; Idm: 430A
Type of module: MOSFET transistor
Semiconductor structure: diode/transistor
Drain-source voltage: 100V
Drain current: 100A
Case: SP3
Topology: buck chopper x2; NTC thermistor
Electrical mounting: Press-in PCB
On-state resistance: 10mΩ
Pulsed drain current: 430A
Power dissipation: 390W
Technology: POWER MOS 5®
Gate-source voltage: ±30V
Mechanical mounting: screw
Produkt ist nicht verfügbar
| APTM10DSKM09T3G |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 100V; 100A; SP3; Press-in PCB; Idm: 430A
Type of module: MOSFET transistor
Semiconductor structure: diode/transistor
Drain-source voltage: 100V
Drain current: 100A
Case: SP3
Topology: buck chopper x2; NTC thermistor
Electrical mounting: Press-in PCB
On-state resistance: 10mΩ
Pulsed drain current: 430A
Power dissipation: 390W
Technology: POWER MOS 5®
Gate-source voltage: ±30V
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 100V; 100A; SP3; Press-in PCB; Idm: 430A
Type of module: MOSFET transistor
Semiconductor structure: diode/transistor
Drain-source voltage: 100V
Drain current: 100A
Case: SP3
Topology: buck chopper x2; NTC thermistor
Electrical mounting: Press-in PCB
On-state resistance: 10mΩ
Pulsed drain current: 430A
Power dissipation: 390W
Technology: POWER MOS 5®
Gate-source voltage: ±30V
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APTM10DSKM19T3G |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 100V; 50A; SP3; Press-in PCB; Idm: 300A
Type of module: MOSFET transistor
Semiconductor structure: diode/transistor
Drain-source voltage: 100V
Drain current: 50A
Case: SP3
Topology: buck chopper x2; NTC thermistor
Electrical mounting: Press-in PCB
On-state resistance: 21mΩ
Pulsed drain current: 300A
Power dissipation: 208W
Technology: POWER MOS 5®
Gate-source voltage: ±30V
Mechanical mounting: screw
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 100V; 50A; SP3; Press-in PCB; Idm: 300A
Type of module: MOSFET transistor
Semiconductor structure: diode/transistor
Drain-source voltage: 100V
Drain current: 50A
Case: SP3
Topology: buck chopper x2; NTC thermistor
Electrical mounting: Press-in PCB
On-state resistance: 21mΩ
Pulsed drain current: 300A
Power dissipation: 208W
Technology: POWER MOS 5®
Gate-source voltage: ±30V
Mechanical mounting: screw
Produkt ist nicht verfügbar
| APTM10DSKM19T3G |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 100V; 50A; SP3; Press-in PCB; Idm: 300A
Type of module: MOSFET transistor
Semiconductor structure: diode/transistor
Drain-source voltage: 100V
Drain current: 50A
Case: SP3
Topology: buck chopper x2; NTC thermistor
Electrical mounting: Press-in PCB
On-state resistance: 21mΩ
Pulsed drain current: 300A
Power dissipation: 208W
Technology: POWER MOS 5®
Gate-source voltage: ±30V
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 100V; 50A; SP3; Press-in PCB; Idm: 300A
Type of module: MOSFET transistor
Semiconductor structure: diode/transistor
Drain-source voltage: 100V
Drain current: 50A
Case: SP3
Topology: buck chopper x2; NTC thermistor
Electrical mounting: Press-in PCB
On-state resistance: 21mΩ
Pulsed drain current: 300A
Power dissipation: 208W
Technology: POWER MOS 5®
Gate-source voltage: ±30V
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APTM10DUM02G |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; transistor/transistor,common source; 100V; 370A; SP6C
Type of module: MOSFET transistor
Semiconductor structure: common source; transistor/transistor
Drain-source voltage: 100V
Drain current: 370A
On-state resistance: 2.5mΩ
Power dissipation: 1.25kW
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Technology: POWER MOS 5®
Gate-source voltage: ±30V
Topology: MOSFET x2
Pulsed drain current: 1900A
Case: SP6C
Category: Transistor modules MOSFET
Description: Module; transistor/transistor,common source; 100V; 370A; SP6C
Type of module: MOSFET transistor
Semiconductor structure: common source; transistor/transistor
Drain-source voltage: 100V
Drain current: 370A
On-state resistance: 2.5mΩ
Power dissipation: 1.25kW
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Technology: POWER MOS 5®
Gate-source voltage: ±30V
Topology: MOSFET x2
Pulsed drain current: 1900A
Case: SP6C
Produkt ist nicht verfügbar
| APTM10DUM02G |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; transistor/transistor,common source; 100V; 370A; SP6C
Type of module: MOSFET transistor
Semiconductor structure: common source; transistor/transistor
Drain-source voltage: 100V
Drain current: 370A
On-state resistance: 2.5mΩ
Power dissipation: 1.25kW
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Technology: POWER MOS 5®
Gate-source voltage: ±30V
Topology: MOSFET x2
Pulsed drain current: 1900A
Case: SP6C
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; transistor/transistor,common source; 100V; 370A; SP6C
Type of module: MOSFET transistor
Semiconductor structure: common source; transistor/transistor
Drain-source voltage: 100V
Drain current: 370A
On-state resistance: 2.5mΩ
Power dissipation: 1.25kW
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Technology: POWER MOS 5®
Gate-source voltage: ±30V
Topology: MOSFET x2
Pulsed drain current: 1900A
Case: SP6C
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APTM10HM05FG |
|
Hersteller: MICROCHIP (MICROSEMI)
APTM10HM05FG Transistor modules MOSFET
APTM10HM05FG Transistor modules MOSFET
Produkt ist nicht verfügbar
| APTM10HM09FT3G |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 100V; 100A; SP3F; Press-in PCB
Technology: FREDFET; POWER MOS 5®
Drain-source voltage: 100V
Drain current: 100A
Pulsed drain current: 430A
Power dissipation: 390W
Case: SP3F
Gate-source voltage: ±30V
On-state resistance: 10mΩ
Semiconductor structure: transistor/transistor
Electrical mounting: Press-in PCB
Topology: H-bridge; NTC thermistor
Mechanical mounting: screw
Type of module: MOSFET transistor
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 100V; 100A; SP3F; Press-in PCB
Technology: FREDFET; POWER MOS 5®
Drain-source voltage: 100V
Drain current: 100A
Pulsed drain current: 430A
Power dissipation: 390W
Case: SP3F
Gate-source voltage: ±30V
On-state resistance: 10mΩ
Semiconductor structure: transistor/transistor
Electrical mounting: Press-in PCB
Topology: H-bridge; NTC thermistor
Mechanical mounting: screw
Type of module: MOSFET transistor
Produkt ist nicht verfügbar
| APTM10HM09FT3G |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 100V; 100A; SP3F; Press-in PCB
Technology: FREDFET; POWER MOS 5®
Drain-source voltage: 100V
Drain current: 100A
Pulsed drain current: 430A
Power dissipation: 390W
Case: SP3F
Gate-source voltage: ±30V
On-state resistance: 10mΩ
Semiconductor structure: transistor/transistor
Electrical mounting: Press-in PCB
Topology: H-bridge; NTC thermistor
Mechanical mounting: screw
Type of module: MOSFET transistor
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 100V; 100A; SP3F; Press-in PCB
Technology: FREDFET; POWER MOS 5®
Drain-source voltage: 100V
Drain current: 100A
Pulsed drain current: 430A
Power dissipation: 390W
Case: SP3F
Gate-source voltage: ±30V
On-state resistance: 10mΩ
Semiconductor structure: transistor/transistor
Electrical mounting: Press-in PCB
Topology: H-bridge; NTC thermistor
Mechanical mounting: screw
Type of module: MOSFET transistor
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APTM10HM19FT3G |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 100V; 50A; SP3F; Press-in PCB; 208W
Type of module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 100V
Drain current: 50A
Case: SP3F
Topology: H-bridge; NTC thermistor
Electrical mounting: Press-in PCB
On-state resistance: 21mΩ
Pulsed drain current: 300A
Power dissipation: 208W
Technology: FREDFET; POWER MOS 5®
Gate-source voltage: ±30V
Mechanical mounting: screw
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 100V; 50A; SP3F; Press-in PCB; 208W
Type of module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 100V
Drain current: 50A
Case: SP3F
Topology: H-bridge; NTC thermistor
Electrical mounting: Press-in PCB
On-state resistance: 21mΩ
Pulsed drain current: 300A
Power dissipation: 208W
Technology: FREDFET; POWER MOS 5®
Gate-source voltage: ±30V
Mechanical mounting: screw
Produkt ist nicht verfügbar
| APTM10HM19FT3G |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 100V; 50A; SP3F; Press-in PCB; 208W
Type of module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 100V
Drain current: 50A
Case: SP3F
Topology: H-bridge; NTC thermistor
Electrical mounting: Press-in PCB
On-state resistance: 21mΩ
Pulsed drain current: 300A
Power dissipation: 208W
Technology: FREDFET; POWER MOS 5®
Gate-source voltage: ±30V
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 100V; 50A; SP3F; Press-in PCB; 208W
Type of module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 100V
Drain current: 50A
Case: SP3F
Topology: H-bridge; NTC thermistor
Electrical mounting: Press-in PCB
On-state resistance: 21mΩ
Pulsed drain current: 300A
Power dissipation: 208W
Technology: FREDFET; POWER MOS 5®
Gate-source voltage: ±30V
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APTM10SKM02G |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 100V; 370A; SP6C; Topology: buck chopper
Type of module: MOSFET transistor
Semiconductor structure: diode/transistor
Drain-source voltage: 100V
Drain current: 370A
On-state resistance: 2.5mΩ
Power dissipation: 1.25kW
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Technology: POWER MOS 5®
Gate-source voltage: ±30V
Topology: buck chopper
Pulsed drain current: 1900A
Case: SP6C
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 100V; 370A; SP6C; Topology: buck chopper
Type of module: MOSFET transistor
Semiconductor structure: diode/transistor
Drain-source voltage: 100V
Drain current: 370A
On-state resistance: 2.5mΩ
Power dissipation: 1.25kW
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Technology: POWER MOS 5®
Gate-source voltage: ±30V
Topology: buck chopper
Pulsed drain current: 1900A
Case: SP6C
Produkt ist nicht verfügbar
| APTM10SKM02G |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 100V; 370A; SP6C; Topology: buck chopper
Type of module: MOSFET transistor
Semiconductor structure: diode/transistor
Drain-source voltage: 100V
Drain current: 370A
On-state resistance: 2.5mΩ
Power dissipation: 1.25kW
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Technology: POWER MOS 5®
Gate-source voltage: ±30V
Topology: buck chopper
Pulsed drain current: 1900A
Case: SP6C
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 100V; 370A; SP6C; Topology: buck chopper
Type of module: MOSFET transistor
Semiconductor structure: diode/transistor
Drain-source voltage: 100V
Drain current: 370A
On-state resistance: 2.5mΩ
Power dissipation: 1.25kW
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Technology: POWER MOS 5®
Gate-source voltage: ±30V
Topology: buck chopper
Pulsed drain current: 1900A
Case: SP6C
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APTM10SKM05TG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 100V; 207A; SP4; Idm: 1100A; 780W; screw
Semiconductor structure: diode/transistor
Case: SP4
Technology: POWER MOS 5®
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Drain current: 207A
Gate-source voltage: ±30V
Topology: buck chopper; NTC thermistor
Pulsed drain current: 1100A
Power dissipation: 780W
Drain-source voltage: 100V
On-state resistance: 5mΩ
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 100V; 207A; SP4; Idm: 1100A; 780W; screw
Semiconductor structure: diode/transistor
Case: SP4
Technology: POWER MOS 5®
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Drain current: 207A
Gate-source voltage: ±30V
Topology: buck chopper; NTC thermistor
Pulsed drain current: 1100A
Power dissipation: 780W
Drain-source voltage: 100V
On-state resistance: 5mΩ
Produkt ist nicht verfügbar
| APTM10SKM05TG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 100V; 207A; SP4; Idm: 1100A; 780W; screw
Semiconductor structure: diode/transistor
Case: SP4
Technology: POWER MOS 5®
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Drain current: 207A
Gate-source voltage: ±30V
Topology: buck chopper; NTC thermistor
Pulsed drain current: 1100A
Power dissipation: 780W
Drain-source voltage: 100V
On-state resistance: 5mΩ
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 100V; 207A; SP4; Idm: 1100A; 780W; screw
Semiconductor structure: diode/transistor
Case: SP4
Technology: POWER MOS 5®
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Drain current: 207A
Gate-source voltage: ±30V
Topology: buck chopper; NTC thermistor
Pulsed drain current: 1100A
Power dissipation: 780W
Drain-source voltage: 100V
On-state resistance: 5mΩ
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APTM10TAM09FPG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 100V; 100A; SP6P; Press-in PCB
Technology: FREDFET; POWER MOS 5®
Drain-source voltage: 100V
Drain current: 100A
Pulsed drain current: 430A
Power dissipation: 390W
Case: SP6P
Gate-source voltage: ±30V
On-state resistance: 10mΩ
Semiconductor structure: transistor/transistor
Electrical mounting: Press-in PCB
Topology: MOSFET x3 half-bridge
Mechanical mounting: screw
Type of module: MOSFET transistor
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 100V; 100A; SP6P; Press-in PCB
Technology: FREDFET; POWER MOS 5®
Drain-source voltage: 100V
Drain current: 100A
Pulsed drain current: 430A
Power dissipation: 390W
Case: SP6P
Gate-source voltage: ±30V
On-state resistance: 10mΩ
Semiconductor structure: transistor/transistor
Electrical mounting: Press-in PCB
Topology: MOSFET x3 half-bridge
Mechanical mounting: screw
Type of module: MOSFET transistor
Produkt ist nicht verfügbar
| APTM10TAM09FPG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 100V; 100A; SP6P; Press-in PCB
Technology: FREDFET; POWER MOS 5®
Drain-source voltage: 100V
Drain current: 100A
Pulsed drain current: 430A
Power dissipation: 390W
Case: SP6P
Gate-source voltage: ±30V
On-state resistance: 10mΩ
Semiconductor structure: transistor/transistor
Electrical mounting: Press-in PCB
Topology: MOSFET x3 half-bridge
Mechanical mounting: screw
Type of module: MOSFET transistor
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 100V; 100A; SP6P; Press-in PCB
Technology: FREDFET; POWER MOS 5®
Drain-source voltage: 100V
Drain current: 100A
Pulsed drain current: 430A
Power dissipation: 390W
Case: SP6P
Gate-source voltage: ±30V
On-state resistance: 10mΩ
Semiconductor structure: transistor/transistor
Electrical mounting: Press-in PCB
Topology: MOSFET x3 half-bridge
Mechanical mounting: screw
Type of module: MOSFET transistor
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APTM10TAM19FPG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 100V; 50A; SP6P; Press-in PCB; 208W
Technology: FREDFET; POWER MOS 5®
Semiconductor structure: transistor/transistor
Case: SP6P
Power dissipation: 208W
Drain-source voltage: 100V
Drain current: 50A
On-state resistance: 21mΩ
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Gate-source voltage: ±30V
Topology: MOSFET x3 half-bridge
Pulsed drain current: 300A
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 100V; 50A; SP6P; Press-in PCB; 208W
Technology: FREDFET; POWER MOS 5®
Semiconductor structure: transistor/transistor
Case: SP6P
Power dissipation: 208W
Drain-source voltage: 100V
Drain current: 50A
On-state resistance: 21mΩ
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Gate-source voltage: ±30V
Topology: MOSFET x3 half-bridge
Pulsed drain current: 300A
Produkt ist nicht verfügbar
| APTM10TAM19FPG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 100V; 50A; SP6P; Press-in PCB; 208W
Technology: FREDFET; POWER MOS 5®
Semiconductor structure: transistor/transistor
Case: SP6P
Power dissipation: 208W
Drain-source voltage: 100V
Drain current: 50A
On-state resistance: 21mΩ
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Gate-source voltage: ±30V
Topology: MOSFET x3 half-bridge
Pulsed drain current: 300A
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 100V; 50A; SP6P; Press-in PCB; 208W
Technology: FREDFET; POWER MOS 5®
Semiconductor structure: transistor/transistor
Case: SP6P
Power dissipation: 208W
Drain-source voltage: 100V
Drain current: 50A
On-state resistance: 21mΩ
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Gate-source voltage: ±30V
Topology: MOSFET x3 half-bridge
Pulsed drain current: 300A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APTM10UM01FAG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 100V; 640A; SP6C; Idm: 2200A; 2.5kW
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 100V
Drain current: 640A
Case: SP6C
Electrical mounting: FASTON connectors; screw
On-state resistance: 1.6mΩ
Pulsed drain current: 2200A
Power dissipation: 2.5kW
Technology: FREDFET; POWER MOS 5®
Gate-source voltage: ±30V
Mechanical mounting: screw
Category: Transistor modules MOSFET
Description: Module; single transistor; 100V; 640A; SP6C; Idm: 2200A; 2.5kW
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 100V
Drain current: 640A
Case: SP6C
Electrical mounting: FASTON connectors; screw
On-state resistance: 1.6mΩ
Pulsed drain current: 2200A
Power dissipation: 2.5kW
Technology: FREDFET; POWER MOS 5®
Gate-source voltage: ±30V
Mechanical mounting: screw
Produkt ist nicht verfügbar
| APTM10UM01FAG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 100V; 640A; SP6C; Idm: 2200A; 2.5kW
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 100V
Drain current: 640A
Case: SP6C
Electrical mounting: FASTON connectors; screw
On-state resistance: 1.6mΩ
Pulsed drain current: 2200A
Power dissipation: 2.5kW
Technology: FREDFET; POWER MOS 5®
Gate-source voltage: ±30V
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; single transistor; 100V; 640A; SP6C; Idm: 2200A; 2.5kW
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 100V
Drain current: 640A
Case: SP6C
Electrical mounting: FASTON connectors; screw
On-state resistance: 1.6mΩ
Pulsed drain current: 2200A
Power dissipation: 2.5kW
Technology: FREDFET; POWER MOS 5®
Gate-source voltage: ±30V
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APTM10UM02FAG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 100V; 429A; SP6C; Idm: 1900A; 1.66kW
Technology: FREDFET; POWER MOS 5®
Case: SP6C
Drain-source voltage: 100V
Drain current: 429A
On-state resistance: 2.5mΩ
Power dissipation: 1.66kW
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Gate-source voltage: ±30V
Pulsed drain current: 1900A
Semiconductor structure: single transistor
Category: Transistor modules MOSFET
Description: Module; single transistor; 100V; 429A; SP6C; Idm: 1900A; 1.66kW
Technology: FREDFET; POWER MOS 5®
Case: SP6C
Drain-source voltage: 100V
Drain current: 429A
On-state resistance: 2.5mΩ
Power dissipation: 1.66kW
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Gate-source voltage: ±30V
Pulsed drain current: 1900A
Semiconductor structure: single transistor
Produkt ist nicht verfügbar
| APTM10UM02FAG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 100V; 429A; SP6C; Idm: 1900A; 1.66kW
Technology: FREDFET; POWER MOS 5®
Case: SP6C
Drain-source voltage: 100V
Drain current: 429A
On-state resistance: 2.5mΩ
Power dissipation: 1.66kW
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Gate-source voltage: ±30V
Pulsed drain current: 1900A
Semiconductor structure: single transistor
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; single transistor; 100V; 429A; SP6C; Idm: 1900A; 1.66kW
Technology: FREDFET; POWER MOS 5®
Case: SP6C
Drain-source voltage: 100V
Drain current: 429A
On-state resistance: 2.5mΩ
Power dissipation: 1.66kW
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Gate-source voltage: ±30V
Pulsed drain current: 1900A
Semiconductor structure: single transistor
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APTM120A15FG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 45A; SP6C; Idm: 240A; 1.25kW
Type of module: MOSFET transistor
Mechanical mounting: screw
Pulsed drain current: 240A
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 45A
On-state resistance: 0.175Ω
Power dissipation: 1.25kW
Electrical mounting: FASTON connectors; screw
Technology: FREDFET; POWER MOS 7®
Gate-source voltage: ±30V
Topology: MOSFET half-bridge
Case: SP6C
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 45A; SP6C; Idm: 240A; 1.25kW
Type of module: MOSFET transistor
Mechanical mounting: screw
Pulsed drain current: 240A
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 45A
On-state resistance: 0.175Ω
Power dissipation: 1.25kW
Electrical mounting: FASTON connectors; screw
Technology: FREDFET; POWER MOS 7®
Gate-source voltage: ±30V
Topology: MOSFET half-bridge
Case: SP6C
Produkt ist nicht verfügbar
| APTM120A15FG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 45A; SP6C; Idm: 240A; 1.25kW
Type of module: MOSFET transistor
Mechanical mounting: screw
Pulsed drain current: 240A
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 45A
On-state resistance: 0.175Ω
Power dissipation: 1.25kW
Electrical mounting: FASTON connectors; screw
Technology: FREDFET; POWER MOS 7®
Gate-source voltage: ±30V
Topology: MOSFET half-bridge
Case: SP6C
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 45A; SP6C; Idm: 240A; 1.25kW
Type of module: MOSFET transistor
Mechanical mounting: screw
Pulsed drain current: 240A
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 45A
On-state resistance: 0.175Ω
Power dissipation: 1.25kW
Electrical mounting: FASTON connectors; screw
Technology: FREDFET; POWER MOS 7®
Gate-source voltage: ±30V
Topology: MOSFET half-bridge
Case: SP6C
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APTM120A20DG |
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Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 1.2kV; 37A; SP6C; Idm: 200A; 1.25kW; screw
Type of module: MOSFET transistor
Mechanical mounting: screw
Pulsed drain current: 200A
Semiconductor structure: diode/transistor
Drain-source voltage: 1.2kV
Drain current: 37A
On-state resistance: 0.24Ω
Power dissipation: 1.25kW
Electrical mounting: FASTON connectors; screw
Technology: POWER MOS 7®
Gate-source voltage: ±30V
Topology: MOSFET half-bridge + serial diodes
Case: SP6C
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 1.2kV; 37A; SP6C; Idm: 200A; 1.25kW; screw
Type of module: MOSFET transistor
Mechanical mounting: screw
Pulsed drain current: 200A
Semiconductor structure: diode/transistor
Drain-source voltage: 1.2kV
Drain current: 37A
On-state resistance: 0.24Ω
Power dissipation: 1.25kW
Electrical mounting: FASTON connectors; screw
Technology: POWER MOS 7®
Gate-source voltage: ±30V
Topology: MOSFET half-bridge + serial diodes
Case: SP6C
Produkt ist nicht verfügbar