APTM100H45SCTG Microchip Technology
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Description: MOSFET 4N-CH 1000V 18A SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 357W
Drain to Source Voltage (Vdss): 1000V (1kV)
Current - Continuous Drain (Id) @ 25°C: 18A
Input Capacitance (Ciss) (Max) @ Vds: 4350pF @ 25V
Rds On (Max) @ Id, Vgs: 540mOhm @ 9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 154nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: SP4
Part Status: Active
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1+ | 355.29 EUR |
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Technische Details APTM100H45SCTG Microchip Technology
Category: Transistor modules MOSFET, Description: Module; SiC diode/transistor; 1kV; 14A; SP4; Idm: 72A; 357W; screw, Type of module: MOSFET transistor, Mechanical mounting: screw, Pulsed drain current: 72A, Semiconductor structure: SiC diode/transistor, Drain-source voltage: 1kV, Drain current: 14A, On-state resistance: 0.54Ω, Power dissipation: 357W, Electrical mounting: FASTON connectors; screw, Technology: POWER MOS 7®; SiC, Gate-source voltage: ±30V, Topology: H bridge + parrallel diodes; NTC thermistor, Case: SP4, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote APTM100H45SCTG nach Preis ab 269.23 EUR bis 362.42 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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APTM100H45SCTG | Hersteller : Microchip Technology |
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auf Bestellung 6 Stücke: Lieferzeit 10-14 Tag (e) |
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APTM100H45SCTG | Hersteller : Microchip Technology |
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Produkt ist nicht verfügbar |
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APTM100H45SCTG | Hersteller : MICROCHIP (MICROSEMI) |
![]() Description: Module; SiC diode/transistor; 1kV; 14A; SP4; Idm: 72A; 357W; screw Type of module: MOSFET transistor Mechanical mounting: screw Pulsed drain current: 72A Semiconductor structure: SiC diode/transistor Drain-source voltage: 1kV Drain current: 14A On-state resistance: 0.54Ω Power dissipation: 357W Electrical mounting: FASTON connectors; screw Technology: POWER MOS 7®; SiC Gate-source voltage: ±30V Topology: H bridge + parrallel diodes; NTC thermistor Case: SP4 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APTM100H45SCTG | Hersteller : MICROCHIP (MICROSEMI) |
![]() Description: Module; SiC diode/transistor; 1kV; 14A; SP4; Idm: 72A; 357W; screw Type of module: MOSFET transistor Mechanical mounting: screw Pulsed drain current: 72A Semiconductor structure: SiC diode/transistor Drain-source voltage: 1kV Drain current: 14A On-state resistance: 0.54Ω Power dissipation: 357W Electrical mounting: FASTON connectors; screw Technology: POWER MOS 7®; SiC Gate-source voltage: ±30V Topology: H bridge + parrallel diodes; NTC thermistor Case: SP4 |
Produkt ist nicht verfügbar |