APTM120A20DG Microchip Technology

Category: Transistor modules MOSFET, Description: Module; diode/transistor; 1.2kV; 37A; SP6C; Idm: 200A; 1.25kW; screw, Type of module: MOSFET transistor, Mechanical mounting: screw, Pulsed drain current: 200A, Semiconductor structure: diode/transistor, Drain-source voltage: 1.2kV, Drain current: 37A, On-state resistance: 0.24Ω, Power dissipation: 1.25kW, Electrical mounting: FASTON connectors; screw, Technology: POWER MOS 7®, Gate-source voltage: ±30V, Topology: MOSFET half-bridge + serial diodes, Case: SP6C, Anzahl je Verpackung: 1 Stücke.