Produkte > MICROCHIP (MICROSEMI) > Alle Produkte des Herstellers MICROCHIP (MICROSEMI) (4150) > Seite 57 nach 70
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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APTM120A20DG | MICROCHIP (MICROSEMI) |
![]() Description: Module; diode/transistor; 1.2kV; 37A; SP6C; Idm: 200A; 1.25kW; screw Type of module: MOSFET transistor Mechanical mounting: screw Pulsed drain current: 200A Semiconductor structure: diode/transistor Drain-source voltage: 1.2kV Drain current: 37A On-state resistance: 0.24Ω Power dissipation: 1.25kW Electrical mounting: FASTON connectors; screw Technology: POWER MOS 7® Gate-source voltage: ±30V Topology: MOSFET half-bridge + serial diodes Case: SP6C Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APTM120A20SG | MICROCHIP (MICROSEMI) |
![]() Description: Module; diode/transistor; 1.2kV; 37A; SP6C; Idm: 200A; 1.25kW; screw Type of module: MOSFET transistor Mechanical mounting: screw Pulsed drain current: 200A Semiconductor structure: diode/transistor Drain-source voltage: 1.2kV Drain current: 37A On-state resistance: 0.24Ω Power dissipation: 1.25kW Electrical mounting: FASTON connectors; screw Technology: POWER MOS 7® Gate-source voltage: ±30V Topology: MOSFET half-bridge + serial diodes + parrallel diodes Case: SP6C |
Produkt ist nicht verfügbar |
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APTM120A20SG | MICROCHIP (MICROSEMI) |
![]() Description: Module; diode/transistor; 1.2kV; 37A; SP6C; Idm: 200A; 1.25kW; screw Type of module: MOSFET transistor Mechanical mounting: screw Pulsed drain current: 200A Semiconductor structure: diode/transistor Drain-source voltage: 1.2kV Drain current: 37A On-state resistance: 0.24Ω Power dissipation: 1.25kW Electrical mounting: FASTON connectors; screw Technology: POWER MOS 7® Gate-source voltage: ±30V Topology: MOSFET half-bridge + serial diodes + parrallel diodes Case: SP6C Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APTM120A29FTG | MICROCHIP (MICROSEMI) |
![]() Description: Module; transistor/transistor; 1.2kV; 25A; SP4; Idm: 136A; 780W Type of module: MOSFET transistor Mechanical mounting: screw Pulsed drain current: 136A Semiconductor structure: transistor/transistor Drain-source voltage: 1.2kV Drain current: 25A On-state resistance: 348mΩ Power dissipation: 780W Electrical mounting: FASTON connectors; screw Technology: FREDFET; POWER MOS 7® Gate-source voltage: ±30V Topology: MOSFET half-bridge; NTC thermistor Case: SP4 |
Produkt ist nicht verfügbar |
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APTM120A29FTG | MICROCHIP (MICROSEMI) |
![]() Description: Module; transistor/transistor; 1.2kV; 25A; SP4; Idm: 136A; 780W Type of module: MOSFET transistor Mechanical mounting: screw Pulsed drain current: 136A Semiconductor structure: transistor/transistor Drain-source voltage: 1.2kV Drain current: 25A On-state resistance: 348mΩ Power dissipation: 780W Electrical mounting: FASTON connectors; screw Technology: FREDFET; POWER MOS 7® Gate-source voltage: ±30V Topology: MOSFET half-bridge; NTC thermistor Case: SP4 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APTM120DA30CT1G | MICROCHIP (MICROSEMI) |
![]() Description: Module; SiC diode/transistor; 1.2kV; 23A; SP1; Press-in PCB; 657W Type of module: MOSFET transistor Semiconductor structure: SiC diode/transistor Drain-source voltage: 1.2kV Drain current: 23A Case: SP1 Topology: boost chopper; NTC thermistor Electrical mounting: Press-in PCB On-state resistance: 0.36Ω Pulsed drain current: 195A Power dissipation: 657W Technology: POWER MOS 8®; SiC Gate-source voltage: ±30V Mechanical mounting: screw |
Produkt ist nicht verfügbar |
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APTM120DA30CT1G | MICROCHIP (MICROSEMI) |
![]() Description: Module; SiC diode/transistor; 1.2kV; 23A; SP1; Press-in PCB; 657W Type of module: MOSFET transistor Semiconductor structure: SiC diode/transistor Drain-source voltage: 1.2kV Drain current: 23A Case: SP1 Topology: boost chopper; NTC thermistor Electrical mounting: Press-in PCB On-state resistance: 0.36Ω Pulsed drain current: 195A Power dissipation: 657W Technology: POWER MOS 8®; SiC Gate-source voltage: ±30V Mechanical mounting: screw Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APTM120DA30T1G | MICROCHIP (MICROSEMI) |
![]() Description: Module; diode/transistor; 1.2kV; 23A; SP1; Press-in PCB; Idm: 195A Type of module: MOSFET transistor Semiconductor structure: diode/transistor Drain-source voltage: 1.2kV Drain current: 23A Case: SP1 Topology: boost chopper; NTC thermistor Electrical mounting: Press-in PCB On-state resistance: 0.36Ω Pulsed drain current: 195A Power dissipation: 657W Technology: POWER MOS 8® Gate-source voltage: ±30V Mechanical mounting: screw |
Produkt ist nicht verfügbar |
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APTM120DA30T1G | MICROCHIP (MICROSEMI) |
![]() Description: Module; diode/transistor; 1.2kV; 23A; SP1; Press-in PCB; Idm: 195A Type of module: MOSFET transistor Semiconductor structure: diode/transistor Drain-source voltage: 1.2kV Drain current: 23A Case: SP1 Topology: boost chopper; NTC thermistor Electrical mounting: Press-in PCB On-state resistance: 0.36Ω Pulsed drain current: 195A Power dissipation: 657W Technology: POWER MOS 8® Gate-source voltage: ±30V Mechanical mounting: screw Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APTM120DU15G | MICROCHIP (MICROSEMI) |
![]() Description: Module; transistor/transistor,common source; 1.2kV; 45A; SP6C Type of module: MOSFET transistor Mechanical mounting: screw Pulsed drain current: 240A Semiconductor structure: common source; transistor/transistor Drain-source voltage: 1.2kV Drain current: 45A On-state resistance: 0.175Ω Power dissipation: 1.25kW Electrical mounting: FASTON connectors; screw Technology: POWER MOS 7® Gate-source voltage: ±30V Topology: MOSFET x2 Case: SP6C |
Produkt ist nicht verfügbar |
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APTM120DU15G | MICROCHIP (MICROSEMI) |
![]() Description: Module; transistor/transistor,common source; 1.2kV; 45A; SP6C Type of module: MOSFET transistor Mechanical mounting: screw Pulsed drain current: 240A Semiconductor structure: common source; transistor/transistor Drain-source voltage: 1.2kV Drain current: 45A On-state resistance: 0.175Ω Power dissipation: 1.25kW Electrical mounting: FASTON connectors; screw Technology: POWER MOS 7® Gate-source voltage: ±30V Topology: MOSFET x2 Case: SP6C Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APTM120H140FT1G | MICROCHIP (MICROSEMI) |
![]() Description: Module; transistor/transistor; 1.2kV; 6A; SP1; Press-in PCB; 208W Type of module: MOSFET transistor Mechanical mounting: screw Pulsed drain current: 50A Semiconductor structure: transistor/transistor Drain-source voltage: 1.2kV Drain current: 6A On-state resistance: 1.68Ω Power dissipation: 208W Electrical mounting: Press-in PCB Technology: POWER MOS 8® Gate-source voltage: ±30V Topology: H-bridge; NTC thermistor Case: SP1 |
Produkt ist nicht verfügbar |
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APTM120H140FT1G | MICROCHIP (MICROSEMI) |
![]() Description: Module; transistor/transistor; 1.2kV; 6A; SP1; Press-in PCB; 208W Type of module: MOSFET transistor Mechanical mounting: screw Pulsed drain current: 50A Semiconductor structure: transistor/transistor Drain-source voltage: 1.2kV Drain current: 6A On-state resistance: 1.68Ω Power dissipation: 208W Electrical mounting: Press-in PCB Technology: POWER MOS 8® Gate-source voltage: ±30V Topology: H-bridge; NTC thermistor Case: SP1 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APTM120H29FG | MICROCHIP (MICROSEMI) |
![]() Description: Module; transistor/transistor; 1.2kV; 25A; SP6C; Idm: 136A; 780W Type of module: MOSFET transistor Mechanical mounting: screw Pulsed drain current: 136A Semiconductor structure: transistor/transistor Drain-source voltage: 1.2kV Drain current: 25A On-state resistance: 348mΩ Power dissipation: 780W Electrical mounting: FASTON connectors; screw Technology: FREDFET; POWER MOS 7® Gate-source voltage: ±30V Topology: H-bridge Case: SP6C |
Produkt ist nicht verfügbar |
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APTM120H29FG | MICROCHIP (MICROSEMI) |
![]() Description: Module; transistor/transistor; 1.2kV; 25A; SP6C; Idm: 136A; 780W Type of module: MOSFET transistor Mechanical mounting: screw Pulsed drain current: 136A Semiconductor structure: transistor/transistor Drain-source voltage: 1.2kV Drain current: 25A On-state resistance: 348mΩ Power dissipation: 780W Electrical mounting: FASTON connectors; screw Technology: FREDFET; POWER MOS 7® Gate-source voltage: ±30V Topology: H-bridge Case: SP6C Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APTM120U10SAG | MICROCHIP (MICROSEMI) |
![]() Description: Module; diode/transistor; 1.2kV; 86A; SP6C; Idm: 464A; 3.29kW; screw Type of module: MOSFET transistor Mechanical mounting: screw Pulsed drain current: 464A Semiconductor structure: diode/transistor Drain-source voltage: 1.2kV Drain current: 86A On-state resistance: 0.12Ω Power dissipation: 3.29kW Electrical mounting: FASTON connectors; screw Technology: POWER MOS 7® Gate-source voltage: ±30V Topology: single transistor + series diode - parrallel diode Case: SP6C |
Produkt ist nicht verfügbar |
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APTM120U10SAG | MICROCHIP (MICROSEMI) |
![]() Description: Module; diode/transistor; 1.2kV; 86A; SP6C; Idm: 464A; 3.29kW; screw Type of module: MOSFET transistor Mechanical mounting: screw Pulsed drain current: 464A Semiconductor structure: diode/transistor Drain-source voltage: 1.2kV Drain current: 86A On-state resistance: 0.12Ω Power dissipation: 3.29kW Electrical mounting: FASTON connectors; screw Technology: POWER MOS 7® Gate-source voltage: ±30V Topology: single transistor + series diode - parrallel diode Case: SP6C Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APTM120U10SCAVG | MICROCHIP (MICROSEMI) |
![]() Description: Module; SiC diode/transistor; 1.2kV; 86A; SP6; screw; Idm: 464A Mechanical mounting: screw Pulsed drain current: 464A Type of module: MOSFET transistor Topology: single transistor + series diode - parrallel diode Power dissipation: 3.29kW Gate-source voltage: ±30V On-state resistance: 0.12Ω Drain current: 86A Drain-source voltage: 1.2kV Semiconductor structure: SiC diode/transistor Technology: POWER MOS 7®; SiC Electrical mounting: screw Case: SP6 |
Produkt ist nicht verfügbar |
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APTM120U10SCAVG | MICROCHIP (MICROSEMI) |
![]() Description: Module; SiC diode/transistor; 1.2kV; 86A; SP6; screw; Idm: 464A Mechanical mounting: screw Pulsed drain current: 464A Type of module: MOSFET transistor Topology: single transistor + series diode - parrallel diode Power dissipation: 3.29kW Gate-source voltage: ±30V On-state resistance: 0.12Ω Drain current: 86A Drain-source voltage: 1.2kV Semiconductor structure: SiC diode/transistor Technology: POWER MOS 7®; SiC Electrical mounting: screw Case: SP6 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APTM120UM70DAG | MICROCHIP (MICROSEMI) |
![]() Description: Module; diode/transistor; 1.2kV; 126A; SP6C; Idm: 684A; 5kW; screw Type of module: MOSFET transistor Mechanical mounting: screw Pulsed drain current: 684A Semiconductor structure: diode/transistor Drain-source voltage: 1.2kV Drain current: 126A On-state resistance: 80mΩ Power dissipation: 5kW Electrical mounting: FASTON connectors; screw Technology: POWER MOS 7® Gate-source voltage: ±30V Topology: single transistor + series diode Case: SP6C |
Produkt ist nicht verfügbar |
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APTM120UM70DAG | MICROCHIP (MICROSEMI) |
![]() Description: Module; diode/transistor; 1.2kV; 126A; SP6C; Idm: 684A; 5kW; screw Type of module: MOSFET transistor Mechanical mounting: screw Pulsed drain current: 684A Semiconductor structure: diode/transistor Drain-source voltage: 1.2kV Drain current: 126A On-state resistance: 80mΩ Power dissipation: 5kW Electrical mounting: FASTON connectors; screw Technology: POWER MOS 7® Gate-source voltage: ±30V Topology: single transistor + series diode Case: SP6C Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APTM120UM70FAG | MICROCHIP (MICROSEMI) |
![]() Description: Module; single transistor; 1.2kV; 126A; SP6C; Idm: 684A; 5kW; screw Technology: FREDFET; POWER MOS 7® Case: SP6C Drain-source voltage: 1.2kV Drain current: 126A On-state resistance: 80mΩ Power dissipation: 5kW Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: MOSFET transistor Gate-source voltage: ±30V Pulsed drain current: 684A Semiconductor structure: single transistor |
Produkt ist nicht verfügbar |
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APTM120UM70FAG | MICROCHIP (MICROSEMI) |
![]() Description: Module; single transistor; 1.2kV; 126A; SP6C; Idm: 684A; 5kW; screw Technology: FREDFET; POWER MOS 7® Case: SP6C Drain-source voltage: 1.2kV Drain current: 126A On-state resistance: 80mΩ Power dissipation: 5kW Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: MOSFET transistor Gate-source voltage: ±30V Pulsed drain current: 684A Semiconductor structure: single transistor Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APTM20AM04FG | MICROCHIP (MICROSEMI) |
![]() Description: Module; transistor/transistor; 200V; 278A; SP6C; Idm: 1488A; 1.25kW Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Technology: FREDFET; POWER MOS 7® Gate-source voltage: ±30V Topology: MOSFET half-bridge Pulsed drain current: 1488A Case: SP6C Semiconductor structure: transistor/transistor Drain-source voltage: 200V Drain current: 278A On-state resistance: 5mΩ Power dissipation: 1.25kW Type of module: MOSFET transistor |
Produkt ist nicht verfügbar |
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APTM20AM04FG | MICROCHIP (MICROSEMI) |
![]() Description: Module; transistor/transistor; 200V; 278A; SP6C; Idm: 1488A; 1.25kW Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Technology: FREDFET; POWER MOS 7® Gate-source voltage: ±30V Topology: MOSFET half-bridge Pulsed drain current: 1488A Case: SP6C Semiconductor structure: transistor/transistor Drain-source voltage: 200V Drain current: 278A On-state resistance: 5mΩ Power dissipation: 1.25kW Type of module: MOSFET transistor Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APTM20AM05FG | MICROCHIP (MICROSEMI) |
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APTM20AM06SG | MICROCHIP (MICROSEMI) |
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Produkt ist nicht verfügbar |
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APTM20AM08FTG | MICROCHIP (MICROSEMI) |
![]() Description: Module; diode/transistor; 200V; 155A; SP4; Ugs: ±30V; Idm: 832A; 781W Mechanical mounting: screw Electrical mounting: FASTON connectors; screw Type of module: MOSFET transistor Semiconductor structure: diode/transistor Case: SP4 On-state resistance: 10mΩ Gate-source voltage: ±30V Topology: MOSFET half-bridge; NTC thermistor Pulsed drain current: 832A Power dissipation: 781W Technology: FREDFET; POWER MOS 7® Drain current: 155A Drain-source voltage: 200V |
Produkt ist nicht verfügbar |
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APTM20AM08FTG | MICROCHIP (MICROSEMI) |
![]() Description: Module; diode/transistor; 200V; 155A; SP4; Ugs: ±30V; Idm: 832A; 781W Mechanical mounting: screw Electrical mounting: FASTON connectors; screw Type of module: MOSFET transistor Semiconductor structure: diode/transistor Case: SP4 On-state resistance: 10mΩ Gate-source voltage: ±30V Topology: MOSFET half-bridge; NTC thermistor Pulsed drain current: 832A Power dissipation: 781W Technology: FREDFET; POWER MOS 7® Drain current: 155A Drain-source voltage: 200V Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APTM20AM10FTG | MICROCHIP (MICROSEMI) |
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APTM20AM10STG | MICROCHIP (MICROSEMI) |
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APTM20DAM04G | MICROCHIP (MICROSEMI) |
![]() Description: Module; diode/transistor; 200V; 278A; SP6C; Idm: 1488A; 1.25kW Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Technology: POWER MOS 7® Gate-source voltage: ±30V Topology: boost chopper Pulsed drain current: 1488A Case: SP6C Semiconductor structure: diode/transistor Drain-source voltage: 200V Drain current: 278A On-state resistance: 5mΩ Power dissipation: 1.25kW Type of module: MOSFET transistor |
Produkt ist nicht verfügbar |
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APTM20DAM04G | MICROCHIP (MICROSEMI) |
![]() Description: Module; diode/transistor; 200V; 278A; SP6C; Idm: 1488A; 1.25kW Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Technology: POWER MOS 7® Gate-source voltage: ±30V Topology: boost chopper Pulsed drain current: 1488A Case: SP6C Semiconductor structure: diode/transistor Drain-source voltage: 200V Drain current: 278A On-state resistance: 5mΩ Power dissipation: 1.25kW Type of module: MOSFET transistor Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APTM20DAM05G | MICROCHIP (MICROSEMI) |
![]() Description: Module; diode/transistor; 200V; 237A; SP6C; Idm: 1268A; 1136W; screw Case: SP6C Topology: boost chopper Drain-source voltage: 200V Drain current: 237A On-state resistance: 6mΩ Power dissipation: 1136W Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: MOSFET transistor Technology: POWER MOS 7® Gate-source voltage: ±30V Pulsed drain current: 1268A Semiconductor structure: diode/transistor |
Produkt ist nicht verfügbar |
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APTM20DAM05G | MICROCHIP (MICROSEMI) |
![]() Description: Module; diode/transistor; 200V; 237A; SP6C; Idm: 1268A; 1136W; screw Case: SP6C Topology: boost chopper Drain-source voltage: 200V Drain current: 237A On-state resistance: 6mΩ Power dissipation: 1136W Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: MOSFET transistor Technology: POWER MOS 7® Gate-source voltage: ±30V Pulsed drain current: 1268A Semiconductor structure: diode/transistor Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APTM20DAM08TG | MICROCHIP (MICROSEMI) |
![]() Description: Module; diode/transistor; 200V; 155A; SP4; Idm: 832A; 781W; Ugs: ±30V Type of module: MOSFET transistor Semiconductor structure: diode/transistor Drain-source voltage: 200V Drain current: 155A Case: SP4 Topology: boost chopper; NTC thermistor Electrical mounting: FASTON connectors; screw On-state resistance: 10mΩ Pulsed drain current: 832A Power dissipation: 781W Technology: POWER MOS 7® Gate-source voltage: ±30V Mechanical mounting: screw |
Produkt ist nicht verfügbar |
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APTM20DAM08TG | MICROCHIP (MICROSEMI) |
![]() Description: Module; diode/transistor; 200V; 155A; SP4; Idm: 832A; 781W; Ugs: ±30V Type of module: MOSFET transistor Semiconductor structure: diode/transistor Drain-source voltage: 200V Drain current: 155A Case: SP4 Topology: boost chopper; NTC thermistor Electrical mounting: FASTON connectors; screw On-state resistance: 10mΩ Pulsed drain current: 832A Power dissipation: 781W Technology: POWER MOS 7® Gate-source voltage: ±30V Mechanical mounting: screw Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APTM20DUM04G | MICROCHIP (MICROSEMI) |
![]() Description: Module; transistor/transistor,common source; 200V; 278A; SP6C Type of module: MOSFET transistor Semiconductor structure: common source; transistor/transistor Drain-source voltage: 200V Drain current: 278A Case: SP6C Topology: MOSFET x2 Electrical mounting: FASTON connectors; screw On-state resistance: 5mΩ Pulsed drain current: 1488A Power dissipation: 1.25kW Technology: POWER MOS 7® Gate-source voltage: ±30V Mechanical mounting: screw |
Produkt ist nicht verfügbar |
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APTM20DUM04G | MICROCHIP (MICROSEMI) |
![]() Description: Module; transistor/transistor,common source; 200V; 278A; SP6C Type of module: MOSFET transistor Semiconductor structure: common source; transistor/transistor Drain-source voltage: 200V Drain current: 278A Case: SP6C Topology: MOSFET x2 Electrical mounting: FASTON connectors; screw On-state resistance: 5mΩ Pulsed drain current: 1488A Power dissipation: 1.25kW Technology: POWER MOS 7® Gate-source voltage: ±30V Mechanical mounting: screw Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APTM20DUM05G | MICROCHIP (MICROSEMI) |
![]() Description: Module; transistor/transistor,common source; 200V; 237A; SP6C Type of module: MOSFET transistor Semiconductor structure: common source; transistor/transistor Drain-source voltage: 200V Drain current: 237A Case: SP6C Topology: MOSFET x2 Electrical mounting: FASTON connectors; screw On-state resistance: 6mΩ Pulsed drain current: 1268A Power dissipation: 1136W Technology: POWER MOS 7® Gate-source voltage: ±30V Mechanical mounting: screw |
Produkt ist nicht verfügbar |
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APTM20DUM05G | MICROCHIP (MICROSEMI) |
![]() Description: Module; transistor/transistor,common source; 200V; 237A; SP6C Type of module: MOSFET transistor Semiconductor structure: common source; transistor/transistor Drain-source voltage: 200V Drain current: 237A Case: SP6C Topology: MOSFET x2 Electrical mounting: FASTON connectors; screw On-state resistance: 6mΩ Pulsed drain current: 1268A Power dissipation: 1136W Technology: POWER MOS 7® Gate-source voltage: ±30V Mechanical mounting: screw Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APTM20DUM08TG | MICROCHIP (MICROSEMI) |
![]() Description: Module; transistor/transistor,common source; 200V; 155A; SP4 Type of module: MOSFET transistor Semiconductor structure: common source; transistor/transistor Drain-source voltage: 200V Drain current: 155A Case: SP4 Topology: MOSFET x2; NTC thermistor Electrical mounting: FASTON connectors; screw On-state resistance: 10mΩ Pulsed drain current: 832A Power dissipation: 781W Technology: POWER MOS 7® Gate-source voltage: ±30V Mechanical mounting: screw |
Produkt ist nicht verfügbar |
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APTM20DUM08TG | MICROCHIP (MICROSEMI) |
![]() Description: Module; transistor/transistor,common source; 200V; 155A; SP4 Type of module: MOSFET transistor Semiconductor structure: common source; transistor/transistor Drain-source voltage: 200V Drain current: 155A Case: SP4 Topology: MOSFET x2; NTC thermistor Electrical mounting: FASTON connectors; screw On-state resistance: 10mΩ Pulsed drain current: 832A Power dissipation: 781W Technology: POWER MOS 7® Gate-source voltage: ±30V Mechanical mounting: screw Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APTM20HM08FG | MICROCHIP (MICROSEMI) |
![]() Description: Module; transistor/transistor; 200V; 155A; SP6C; Idm: 832A; 781W Pulsed drain current: 832A Power dissipation: 781W Technology: FREDFET; POWER MOS 7® Drain current: 155A Drain-source voltage: 200V Mechanical mounting: screw Electrical mounting: FASTON connectors; screw Gate-source voltage: ±30V Type of module: MOSFET transistor Semiconductor structure: transistor/transistor Case: SP6C On-state resistance: 10mΩ Topology: H-bridge |
Produkt ist nicht verfügbar |
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APTM20HM08FG | MICROCHIP (MICROSEMI) |
![]() Description: Module; transistor/transistor; 200V; 155A; SP6C; Idm: 832A; 781W Pulsed drain current: 832A Power dissipation: 781W Technology: FREDFET; POWER MOS 7® Drain current: 155A Drain-source voltage: 200V Mechanical mounting: screw Electrical mounting: FASTON connectors; screw Gate-source voltage: ±30V Type of module: MOSFET transistor Semiconductor structure: transistor/transistor Case: SP6C On-state resistance: 10mΩ Topology: H-bridge Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APTM20HM10FG | MICROCHIP (MICROSEMI) |
![]() Description: Module; transistor/transistor; 200V; 131A; SP6C; Idm: 700A; 694W Case: SP6C Mechanical mounting: screw Electrical mounting: FASTON connectors; screw Power dissipation: 694W Type of module: MOSFET transistor Technology: FREDFET; POWER MOS 7® Gate-source voltage: ±30V Topology: H-bridge Pulsed drain current: 700A Semiconductor structure: transistor/transistor Drain-source voltage: 200V Drain current: 131A On-state resistance: 12mΩ |
Produkt ist nicht verfügbar |
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APTM20HM10FG | MICROCHIP (MICROSEMI) |
![]() Description: Module; transistor/transistor; 200V; 131A; SP6C; Idm: 700A; 694W Case: SP6C Mechanical mounting: screw Electrical mounting: FASTON connectors; screw Power dissipation: 694W Type of module: MOSFET transistor Technology: FREDFET; POWER MOS 7® Gate-source voltage: ±30V Topology: H-bridge Pulsed drain current: 700A Semiconductor structure: transistor/transistor Drain-source voltage: 200V Drain current: 131A On-state resistance: 12mΩ Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APTM20HM16FTG | MICROCHIP (MICROSEMI) |
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APTM20HM20FTG | MICROCHIP (MICROSEMI) |
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APTM20HM20STG | MICROCHIP (MICROSEMI) |
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APTM20SKM04G | MICROCHIP (MICROSEMI) |
![]() Description: Module; diode/transistor; 200V; 278A; SP6C; Topology: buck chopper Case: SP6C Power dissipation: 1.25kW Semiconductor structure: diode/transistor Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Topology: buck chopper Technology: POWER MOS 7® Pulsed drain current: 1488A Gate-source voltage: ±30V Type of module: MOSFET transistor Drain-source voltage: 200V Drain current: 278A On-state resistance: 5mΩ |
Produkt ist nicht verfügbar |
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APTM20SKM04G | MICROCHIP (MICROSEMI) |
![]() Description: Module; diode/transistor; 200V; 278A; SP6C; Topology: buck chopper Case: SP6C Power dissipation: 1.25kW Semiconductor structure: diode/transistor Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Topology: buck chopper Technology: POWER MOS 7® Pulsed drain current: 1488A Gate-source voltage: ±30V Type of module: MOSFET transistor Drain-source voltage: 200V Drain current: 278A On-state resistance: 5mΩ |
Produkt ist nicht verfügbar |
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APTM20SKM08TG | MICROCHIP (MICROSEMI) |
![]() Description: Module; diode/transistor; 200V; 155A; SP4; Ugs: ±30V; Idm: 832A; 781W Mechanical mounting: screw Electrical mounting: FASTON connectors; screw Type of module: MOSFET transistor Semiconductor structure: diode/transistor Case: SP4 On-state resistance: 10mΩ Gate-source voltage: ±30V Topology: buck chopper; NTC thermistor Pulsed drain current: 832A Power dissipation: 781W Technology: POWER MOS 7® Drain current: 155A Drain-source voltage: 200V |
Produkt ist nicht verfügbar |
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APTM20SKM08TG | MICROCHIP (MICROSEMI) |
![]() Description: Module; diode/transistor; 200V; 155A; SP4; Ugs: ±30V; Idm: 832A; 781W Mechanical mounting: screw Electrical mounting: FASTON connectors; screw Type of module: MOSFET transistor Semiconductor structure: diode/transistor Case: SP4 On-state resistance: 10mΩ Gate-source voltage: ±30V Topology: buck chopper; NTC thermistor Pulsed drain current: 832A Power dissipation: 781W Technology: POWER MOS 7® Drain current: 155A Drain-source voltage: 200V Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APTM20TAM16FPG | MICROCHIP (MICROSEMI) |
![]() Description: Module; transistor/transistor; 200V; 77A; SP6P; Press-in PCB; 390W Power dissipation: 390W Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: MOSFET transistor Technology: FREDFET; POWER MOS 7® Gate-source voltage: ±30V Topology: MOSFET x3 half-bridge Pulsed drain current: 416A Case: SP6P Semiconductor structure: transistor/transistor Drain-source voltage: 200V Drain current: 77A On-state resistance: 19mΩ |
Produkt ist nicht verfügbar |
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APTM20TAM16FPG | MICROCHIP (MICROSEMI) |
![]() Description: Module; transistor/transistor; 200V; 77A; SP6P; Press-in PCB; 390W Power dissipation: 390W Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: MOSFET transistor Technology: FREDFET; POWER MOS 7® Gate-source voltage: ±30V Topology: MOSFET x3 half-bridge Pulsed drain current: 416A Case: SP6P Semiconductor structure: transistor/transistor Drain-source voltage: 200V Drain current: 77A On-state resistance: 19mΩ Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APTM20UM03FAG | MICROCHIP (MICROSEMI) |
![]() Description: Module; diode/transistor; 200V; 434A; SP6C; Idm: 2320A; 2.27kW Technology: FREDFET; POWER MOS 7® Drain-source voltage: 200V Drain current: 434A Pulsed drain current: 2320A Power dissipation: 2.27kW Case: SP6C Gate-source voltage: ±30V On-state resistance: 3.6mΩ Semiconductor structure: diode/transistor Electrical mounting: FASTON connectors; screw Topology: single transistor + series diode - parrallel diode Mechanical mounting: screw Type of module: MOSFET transistor |
Produkt ist nicht verfügbar |
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APTM20UM03FAG | MICROCHIP (MICROSEMI) |
![]() Description: Module; diode/transistor; 200V; 434A; SP6C; Idm: 2320A; 2.27kW Technology: FREDFET; POWER MOS 7® Drain-source voltage: 200V Drain current: 434A Pulsed drain current: 2320A Power dissipation: 2.27kW Case: SP6C Gate-source voltage: ±30V On-state resistance: 3.6mΩ Semiconductor structure: diode/transistor Electrical mounting: FASTON connectors; screw Topology: single transistor + series diode - parrallel diode Mechanical mounting: screw Type of module: MOSFET transistor Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APTM20UM04SAG | MICROCHIP (MICROSEMI) |
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Produkt ist nicht verfügbar |
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APTM50AM17FG | MICROCHIP (MICROSEMI) |
![]() Description: Module; transistor/transistor; 500V; 135A; SP6C; Idm: 720A; 1.25kW Pulsed drain current: 720A Power dissipation: 1.25kW Technology: FREDFET; POWER MOS 7® Drain current: 135A Drain-source voltage: 500V Mechanical mounting: screw Electrical mounting: FASTON connectors; screw Gate-source voltage: ±30V Type of module: MOSFET transistor Semiconductor structure: transistor/transistor Case: SP6C On-state resistance: 20mΩ Topology: MOSFET half-bridge |
Produkt ist nicht verfügbar |
APTM120A20DG |
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Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 1.2kV; 37A; SP6C; Idm: 200A; 1.25kW; screw
Type of module: MOSFET transistor
Mechanical mounting: screw
Pulsed drain current: 200A
Semiconductor structure: diode/transistor
Drain-source voltage: 1.2kV
Drain current: 37A
On-state resistance: 0.24Ω
Power dissipation: 1.25kW
Electrical mounting: FASTON connectors; screw
Technology: POWER MOS 7®
Gate-source voltage: ±30V
Topology: MOSFET half-bridge + serial diodes
Case: SP6C
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 1.2kV; 37A; SP6C; Idm: 200A; 1.25kW; screw
Type of module: MOSFET transistor
Mechanical mounting: screw
Pulsed drain current: 200A
Semiconductor structure: diode/transistor
Drain-source voltage: 1.2kV
Drain current: 37A
On-state resistance: 0.24Ω
Power dissipation: 1.25kW
Electrical mounting: FASTON connectors; screw
Technology: POWER MOS 7®
Gate-source voltage: ±30V
Topology: MOSFET half-bridge + serial diodes
Case: SP6C
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
APTM120A20SG |
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Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 1.2kV; 37A; SP6C; Idm: 200A; 1.25kW; screw
Type of module: MOSFET transistor
Mechanical mounting: screw
Pulsed drain current: 200A
Semiconductor structure: diode/transistor
Drain-source voltage: 1.2kV
Drain current: 37A
On-state resistance: 0.24Ω
Power dissipation: 1.25kW
Electrical mounting: FASTON connectors; screw
Technology: POWER MOS 7®
Gate-source voltage: ±30V
Topology: MOSFET half-bridge + serial diodes + parrallel diodes
Case: SP6C
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 1.2kV; 37A; SP6C; Idm: 200A; 1.25kW; screw
Type of module: MOSFET transistor
Mechanical mounting: screw
Pulsed drain current: 200A
Semiconductor structure: diode/transistor
Drain-source voltage: 1.2kV
Drain current: 37A
On-state resistance: 0.24Ω
Power dissipation: 1.25kW
Electrical mounting: FASTON connectors; screw
Technology: POWER MOS 7®
Gate-source voltage: ±30V
Topology: MOSFET half-bridge + serial diodes + parrallel diodes
Case: SP6C
Produkt ist nicht verfügbar
APTM120A20SG |
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Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 1.2kV; 37A; SP6C; Idm: 200A; 1.25kW; screw
Type of module: MOSFET transistor
Mechanical mounting: screw
Pulsed drain current: 200A
Semiconductor structure: diode/transistor
Drain-source voltage: 1.2kV
Drain current: 37A
On-state resistance: 0.24Ω
Power dissipation: 1.25kW
Electrical mounting: FASTON connectors; screw
Technology: POWER MOS 7®
Gate-source voltage: ±30V
Topology: MOSFET half-bridge + serial diodes + parrallel diodes
Case: SP6C
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 1.2kV; 37A; SP6C; Idm: 200A; 1.25kW; screw
Type of module: MOSFET transistor
Mechanical mounting: screw
Pulsed drain current: 200A
Semiconductor structure: diode/transistor
Drain-source voltage: 1.2kV
Drain current: 37A
On-state resistance: 0.24Ω
Power dissipation: 1.25kW
Electrical mounting: FASTON connectors; screw
Technology: POWER MOS 7®
Gate-source voltage: ±30V
Topology: MOSFET half-bridge + serial diodes + parrallel diodes
Case: SP6C
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
APTM120A29FTG |
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Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 25A; SP4; Idm: 136A; 780W
Type of module: MOSFET transistor
Mechanical mounting: screw
Pulsed drain current: 136A
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 25A
On-state resistance: 348mΩ
Power dissipation: 780W
Electrical mounting: FASTON connectors; screw
Technology: FREDFET; POWER MOS 7®
Gate-source voltage: ±30V
Topology: MOSFET half-bridge; NTC thermistor
Case: SP4
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 25A; SP4; Idm: 136A; 780W
Type of module: MOSFET transistor
Mechanical mounting: screw
Pulsed drain current: 136A
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 25A
On-state resistance: 348mΩ
Power dissipation: 780W
Electrical mounting: FASTON connectors; screw
Technology: FREDFET; POWER MOS 7®
Gate-source voltage: ±30V
Topology: MOSFET half-bridge; NTC thermistor
Case: SP4
Produkt ist nicht verfügbar
APTM120A29FTG |
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Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 25A; SP4; Idm: 136A; 780W
Type of module: MOSFET transistor
Mechanical mounting: screw
Pulsed drain current: 136A
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 25A
On-state resistance: 348mΩ
Power dissipation: 780W
Electrical mounting: FASTON connectors; screw
Technology: FREDFET; POWER MOS 7®
Gate-source voltage: ±30V
Topology: MOSFET half-bridge; NTC thermistor
Case: SP4
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 25A; SP4; Idm: 136A; 780W
Type of module: MOSFET transistor
Mechanical mounting: screw
Pulsed drain current: 136A
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 25A
On-state resistance: 348mΩ
Power dissipation: 780W
Electrical mounting: FASTON connectors; screw
Technology: FREDFET; POWER MOS 7®
Gate-source voltage: ±30V
Topology: MOSFET half-bridge; NTC thermistor
Case: SP4
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
APTM120DA30CT1G |
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Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 23A; SP1; Press-in PCB; 657W
Type of module: MOSFET transistor
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 23A
Case: SP1
Topology: boost chopper; NTC thermistor
Electrical mounting: Press-in PCB
On-state resistance: 0.36Ω
Pulsed drain current: 195A
Power dissipation: 657W
Technology: POWER MOS 8®; SiC
Gate-source voltage: ±30V
Mechanical mounting: screw
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 23A; SP1; Press-in PCB; 657W
Type of module: MOSFET transistor
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 23A
Case: SP1
Topology: boost chopper; NTC thermistor
Electrical mounting: Press-in PCB
On-state resistance: 0.36Ω
Pulsed drain current: 195A
Power dissipation: 657W
Technology: POWER MOS 8®; SiC
Gate-source voltage: ±30V
Mechanical mounting: screw
Produkt ist nicht verfügbar
APTM120DA30CT1G |
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Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 23A; SP1; Press-in PCB; 657W
Type of module: MOSFET transistor
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 23A
Case: SP1
Topology: boost chopper; NTC thermistor
Electrical mounting: Press-in PCB
On-state resistance: 0.36Ω
Pulsed drain current: 195A
Power dissipation: 657W
Technology: POWER MOS 8®; SiC
Gate-source voltage: ±30V
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 23A; SP1; Press-in PCB; 657W
Type of module: MOSFET transistor
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 23A
Case: SP1
Topology: boost chopper; NTC thermistor
Electrical mounting: Press-in PCB
On-state resistance: 0.36Ω
Pulsed drain current: 195A
Power dissipation: 657W
Technology: POWER MOS 8®; SiC
Gate-source voltage: ±30V
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
APTM120DA30T1G |
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Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 1.2kV; 23A; SP1; Press-in PCB; Idm: 195A
Type of module: MOSFET transistor
Semiconductor structure: diode/transistor
Drain-source voltage: 1.2kV
Drain current: 23A
Case: SP1
Topology: boost chopper; NTC thermistor
Electrical mounting: Press-in PCB
On-state resistance: 0.36Ω
Pulsed drain current: 195A
Power dissipation: 657W
Technology: POWER MOS 8®
Gate-source voltage: ±30V
Mechanical mounting: screw
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 1.2kV; 23A; SP1; Press-in PCB; Idm: 195A
Type of module: MOSFET transistor
Semiconductor structure: diode/transistor
Drain-source voltage: 1.2kV
Drain current: 23A
Case: SP1
Topology: boost chopper; NTC thermistor
Electrical mounting: Press-in PCB
On-state resistance: 0.36Ω
Pulsed drain current: 195A
Power dissipation: 657W
Technology: POWER MOS 8®
Gate-source voltage: ±30V
Mechanical mounting: screw
Produkt ist nicht verfügbar
APTM120DA30T1G |
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Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 1.2kV; 23A; SP1; Press-in PCB; Idm: 195A
Type of module: MOSFET transistor
Semiconductor structure: diode/transistor
Drain-source voltage: 1.2kV
Drain current: 23A
Case: SP1
Topology: boost chopper; NTC thermistor
Electrical mounting: Press-in PCB
On-state resistance: 0.36Ω
Pulsed drain current: 195A
Power dissipation: 657W
Technology: POWER MOS 8®
Gate-source voltage: ±30V
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 1.2kV; 23A; SP1; Press-in PCB; Idm: 195A
Type of module: MOSFET transistor
Semiconductor structure: diode/transistor
Drain-source voltage: 1.2kV
Drain current: 23A
Case: SP1
Topology: boost chopper; NTC thermistor
Electrical mounting: Press-in PCB
On-state resistance: 0.36Ω
Pulsed drain current: 195A
Power dissipation: 657W
Technology: POWER MOS 8®
Gate-source voltage: ±30V
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
APTM120DU15G |
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Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; transistor/transistor,common source; 1.2kV; 45A; SP6C
Type of module: MOSFET transistor
Mechanical mounting: screw
Pulsed drain current: 240A
Semiconductor structure: common source; transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 45A
On-state resistance: 0.175Ω
Power dissipation: 1.25kW
Electrical mounting: FASTON connectors; screw
Technology: POWER MOS 7®
Gate-source voltage: ±30V
Topology: MOSFET x2
Case: SP6C
Category: Transistor modules MOSFET
Description: Module; transistor/transistor,common source; 1.2kV; 45A; SP6C
Type of module: MOSFET transistor
Mechanical mounting: screw
Pulsed drain current: 240A
Semiconductor structure: common source; transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 45A
On-state resistance: 0.175Ω
Power dissipation: 1.25kW
Electrical mounting: FASTON connectors; screw
Technology: POWER MOS 7®
Gate-source voltage: ±30V
Topology: MOSFET x2
Case: SP6C
Produkt ist nicht verfügbar
APTM120DU15G |
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Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; transistor/transistor,common source; 1.2kV; 45A; SP6C
Type of module: MOSFET transistor
Mechanical mounting: screw
Pulsed drain current: 240A
Semiconductor structure: common source; transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 45A
On-state resistance: 0.175Ω
Power dissipation: 1.25kW
Electrical mounting: FASTON connectors; screw
Technology: POWER MOS 7®
Gate-source voltage: ±30V
Topology: MOSFET x2
Case: SP6C
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; transistor/transistor,common source; 1.2kV; 45A; SP6C
Type of module: MOSFET transistor
Mechanical mounting: screw
Pulsed drain current: 240A
Semiconductor structure: common source; transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 45A
On-state resistance: 0.175Ω
Power dissipation: 1.25kW
Electrical mounting: FASTON connectors; screw
Technology: POWER MOS 7®
Gate-source voltage: ±30V
Topology: MOSFET x2
Case: SP6C
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
APTM120H140FT1G |
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Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 6A; SP1; Press-in PCB; 208W
Type of module: MOSFET transistor
Mechanical mounting: screw
Pulsed drain current: 50A
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 6A
On-state resistance: 1.68Ω
Power dissipation: 208W
Electrical mounting: Press-in PCB
Technology: POWER MOS 8®
Gate-source voltage: ±30V
Topology: H-bridge; NTC thermistor
Case: SP1
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 6A; SP1; Press-in PCB; 208W
Type of module: MOSFET transistor
Mechanical mounting: screw
Pulsed drain current: 50A
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 6A
On-state resistance: 1.68Ω
Power dissipation: 208W
Electrical mounting: Press-in PCB
Technology: POWER MOS 8®
Gate-source voltage: ±30V
Topology: H-bridge; NTC thermistor
Case: SP1
Produkt ist nicht verfügbar
APTM120H140FT1G |
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Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 6A; SP1; Press-in PCB; 208W
Type of module: MOSFET transistor
Mechanical mounting: screw
Pulsed drain current: 50A
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 6A
On-state resistance: 1.68Ω
Power dissipation: 208W
Electrical mounting: Press-in PCB
Technology: POWER MOS 8®
Gate-source voltage: ±30V
Topology: H-bridge; NTC thermistor
Case: SP1
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 6A; SP1; Press-in PCB; 208W
Type of module: MOSFET transistor
Mechanical mounting: screw
Pulsed drain current: 50A
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 6A
On-state resistance: 1.68Ω
Power dissipation: 208W
Electrical mounting: Press-in PCB
Technology: POWER MOS 8®
Gate-source voltage: ±30V
Topology: H-bridge; NTC thermistor
Case: SP1
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
APTM120H29FG |
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Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 25A; SP6C; Idm: 136A; 780W
Type of module: MOSFET transistor
Mechanical mounting: screw
Pulsed drain current: 136A
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 25A
On-state resistance: 348mΩ
Power dissipation: 780W
Electrical mounting: FASTON connectors; screw
Technology: FREDFET; POWER MOS 7®
Gate-source voltage: ±30V
Topology: H-bridge
Case: SP6C
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 25A; SP6C; Idm: 136A; 780W
Type of module: MOSFET transistor
Mechanical mounting: screw
Pulsed drain current: 136A
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 25A
On-state resistance: 348mΩ
Power dissipation: 780W
Electrical mounting: FASTON connectors; screw
Technology: FREDFET; POWER MOS 7®
Gate-source voltage: ±30V
Topology: H-bridge
Case: SP6C
Produkt ist nicht verfügbar
APTM120H29FG |
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Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 25A; SP6C; Idm: 136A; 780W
Type of module: MOSFET transistor
Mechanical mounting: screw
Pulsed drain current: 136A
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 25A
On-state resistance: 348mΩ
Power dissipation: 780W
Electrical mounting: FASTON connectors; screw
Technology: FREDFET; POWER MOS 7®
Gate-source voltage: ±30V
Topology: H-bridge
Case: SP6C
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 25A; SP6C; Idm: 136A; 780W
Type of module: MOSFET transistor
Mechanical mounting: screw
Pulsed drain current: 136A
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 25A
On-state resistance: 348mΩ
Power dissipation: 780W
Electrical mounting: FASTON connectors; screw
Technology: FREDFET; POWER MOS 7®
Gate-source voltage: ±30V
Topology: H-bridge
Case: SP6C
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
APTM120U10SAG |
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Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 1.2kV; 86A; SP6C; Idm: 464A; 3.29kW; screw
Type of module: MOSFET transistor
Mechanical mounting: screw
Pulsed drain current: 464A
Semiconductor structure: diode/transistor
Drain-source voltage: 1.2kV
Drain current: 86A
On-state resistance: 0.12Ω
Power dissipation: 3.29kW
Electrical mounting: FASTON connectors; screw
Technology: POWER MOS 7®
Gate-source voltage: ±30V
Topology: single transistor + series diode - parrallel diode
Case: SP6C
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 1.2kV; 86A; SP6C; Idm: 464A; 3.29kW; screw
Type of module: MOSFET transistor
Mechanical mounting: screw
Pulsed drain current: 464A
Semiconductor structure: diode/transistor
Drain-source voltage: 1.2kV
Drain current: 86A
On-state resistance: 0.12Ω
Power dissipation: 3.29kW
Electrical mounting: FASTON connectors; screw
Technology: POWER MOS 7®
Gate-source voltage: ±30V
Topology: single transistor + series diode - parrallel diode
Case: SP6C
Produkt ist nicht verfügbar
APTM120U10SAG |
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Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 1.2kV; 86A; SP6C; Idm: 464A; 3.29kW; screw
Type of module: MOSFET transistor
Mechanical mounting: screw
Pulsed drain current: 464A
Semiconductor structure: diode/transistor
Drain-source voltage: 1.2kV
Drain current: 86A
On-state resistance: 0.12Ω
Power dissipation: 3.29kW
Electrical mounting: FASTON connectors; screw
Technology: POWER MOS 7®
Gate-source voltage: ±30V
Topology: single transistor + series diode - parrallel diode
Case: SP6C
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 1.2kV; 86A; SP6C; Idm: 464A; 3.29kW; screw
Type of module: MOSFET transistor
Mechanical mounting: screw
Pulsed drain current: 464A
Semiconductor structure: diode/transistor
Drain-source voltage: 1.2kV
Drain current: 86A
On-state resistance: 0.12Ω
Power dissipation: 3.29kW
Electrical mounting: FASTON connectors; screw
Technology: POWER MOS 7®
Gate-source voltage: ±30V
Topology: single transistor + series diode - parrallel diode
Case: SP6C
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
APTM120U10SCAVG |
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Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 86A; SP6; screw; Idm: 464A
Mechanical mounting: screw
Pulsed drain current: 464A
Type of module: MOSFET transistor
Topology: single transistor + series diode - parrallel diode
Power dissipation: 3.29kW
Gate-source voltage: ±30V
On-state resistance: 0.12Ω
Drain current: 86A
Drain-source voltage: 1.2kV
Semiconductor structure: SiC diode/transistor
Technology: POWER MOS 7®; SiC
Electrical mounting: screw
Case: SP6
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 86A; SP6; screw; Idm: 464A
Mechanical mounting: screw
Pulsed drain current: 464A
Type of module: MOSFET transistor
Topology: single transistor + series diode - parrallel diode
Power dissipation: 3.29kW
Gate-source voltage: ±30V
On-state resistance: 0.12Ω
Drain current: 86A
Drain-source voltage: 1.2kV
Semiconductor structure: SiC diode/transistor
Technology: POWER MOS 7®; SiC
Electrical mounting: screw
Case: SP6
Produkt ist nicht verfügbar
APTM120U10SCAVG |
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Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 86A; SP6; screw; Idm: 464A
Mechanical mounting: screw
Pulsed drain current: 464A
Type of module: MOSFET transistor
Topology: single transistor + series diode - parrallel diode
Power dissipation: 3.29kW
Gate-source voltage: ±30V
On-state resistance: 0.12Ω
Drain current: 86A
Drain-source voltage: 1.2kV
Semiconductor structure: SiC diode/transistor
Technology: POWER MOS 7®; SiC
Electrical mounting: screw
Case: SP6
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 86A; SP6; screw; Idm: 464A
Mechanical mounting: screw
Pulsed drain current: 464A
Type of module: MOSFET transistor
Topology: single transistor + series diode - parrallel diode
Power dissipation: 3.29kW
Gate-source voltage: ±30V
On-state resistance: 0.12Ω
Drain current: 86A
Drain-source voltage: 1.2kV
Semiconductor structure: SiC diode/transistor
Technology: POWER MOS 7®; SiC
Electrical mounting: screw
Case: SP6
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
APTM120UM70DAG |
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Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 1.2kV; 126A; SP6C; Idm: 684A; 5kW; screw
Type of module: MOSFET transistor
Mechanical mounting: screw
Pulsed drain current: 684A
Semiconductor structure: diode/transistor
Drain-source voltage: 1.2kV
Drain current: 126A
On-state resistance: 80mΩ
Power dissipation: 5kW
Electrical mounting: FASTON connectors; screw
Technology: POWER MOS 7®
Gate-source voltage: ±30V
Topology: single transistor + series diode
Case: SP6C
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 1.2kV; 126A; SP6C; Idm: 684A; 5kW; screw
Type of module: MOSFET transistor
Mechanical mounting: screw
Pulsed drain current: 684A
Semiconductor structure: diode/transistor
Drain-source voltage: 1.2kV
Drain current: 126A
On-state resistance: 80mΩ
Power dissipation: 5kW
Electrical mounting: FASTON connectors; screw
Technology: POWER MOS 7®
Gate-source voltage: ±30V
Topology: single transistor + series diode
Case: SP6C
Produkt ist nicht verfügbar
APTM120UM70DAG |
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Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 1.2kV; 126A; SP6C; Idm: 684A; 5kW; screw
Type of module: MOSFET transistor
Mechanical mounting: screw
Pulsed drain current: 684A
Semiconductor structure: diode/transistor
Drain-source voltage: 1.2kV
Drain current: 126A
On-state resistance: 80mΩ
Power dissipation: 5kW
Electrical mounting: FASTON connectors; screw
Technology: POWER MOS 7®
Gate-source voltage: ±30V
Topology: single transistor + series diode
Case: SP6C
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 1.2kV; 126A; SP6C; Idm: 684A; 5kW; screw
Type of module: MOSFET transistor
Mechanical mounting: screw
Pulsed drain current: 684A
Semiconductor structure: diode/transistor
Drain-source voltage: 1.2kV
Drain current: 126A
On-state resistance: 80mΩ
Power dissipation: 5kW
Electrical mounting: FASTON connectors; screw
Technology: POWER MOS 7®
Gate-source voltage: ±30V
Topology: single transistor + series diode
Case: SP6C
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
APTM120UM70FAG |
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Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 126A; SP6C; Idm: 684A; 5kW; screw
Technology: FREDFET; POWER MOS 7®
Case: SP6C
Drain-source voltage: 1.2kV
Drain current: 126A
On-state resistance: 80mΩ
Power dissipation: 5kW
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Gate-source voltage: ±30V
Pulsed drain current: 684A
Semiconductor structure: single transistor
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 126A; SP6C; Idm: 684A; 5kW; screw
Technology: FREDFET; POWER MOS 7®
Case: SP6C
Drain-source voltage: 1.2kV
Drain current: 126A
On-state resistance: 80mΩ
Power dissipation: 5kW
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Gate-source voltage: ±30V
Pulsed drain current: 684A
Semiconductor structure: single transistor
Produkt ist nicht verfügbar
APTM120UM70FAG |
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Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 126A; SP6C; Idm: 684A; 5kW; screw
Technology: FREDFET; POWER MOS 7®
Case: SP6C
Drain-source voltage: 1.2kV
Drain current: 126A
On-state resistance: 80mΩ
Power dissipation: 5kW
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Gate-source voltage: ±30V
Pulsed drain current: 684A
Semiconductor structure: single transistor
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 126A; SP6C; Idm: 684A; 5kW; screw
Technology: FREDFET; POWER MOS 7®
Case: SP6C
Drain-source voltage: 1.2kV
Drain current: 126A
On-state resistance: 80mΩ
Power dissipation: 5kW
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Gate-source voltage: ±30V
Pulsed drain current: 684A
Semiconductor structure: single transistor
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
APTM20AM04FG |
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Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 200V; 278A; SP6C; Idm: 1488A; 1.25kW
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Technology: FREDFET; POWER MOS 7®
Gate-source voltage: ±30V
Topology: MOSFET half-bridge
Pulsed drain current: 1488A
Case: SP6C
Semiconductor structure: transistor/transistor
Drain-source voltage: 200V
Drain current: 278A
On-state resistance: 5mΩ
Power dissipation: 1.25kW
Type of module: MOSFET transistor
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 200V; 278A; SP6C; Idm: 1488A; 1.25kW
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Technology: FREDFET; POWER MOS 7®
Gate-source voltage: ±30V
Topology: MOSFET half-bridge
Pulsed drain current: 1488A
Case: SP6C
Semiconductor structure: transistor/transistor
Drain-source voltage: 200V
Drain current: 278A
On-state resistance: 5mΩ
Power dissipation: 1.25kW
Type of module: MOSFET transistor
Produkt ist nicht verfügbar
APTM20AM04FG |
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Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 200V; 278A; SP6C; Idm: 1488A; 1.25kW
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Technology: FREDFET; POWER MOS 7®
Gate-source voltage: ±30V
Topology: MOSFET half-bridge
Pulsed drain current: 1488A
Case: SP6C
Semiconductor structure: transistor/transistor
Drain-source voltage: 200V
Drain current: 278A
On-state resistance: 5mΩ
Power dissipation: 1.25kW
Type of module: MOSFET transistor
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 200V; 278A; SP6C; Idm: 1488A; 1.25kW
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Technology: FREDFET; POWER MOS 7®
Gate-source voltage: ±30V
Topology: MOSFET half-bridge
Pulsed drain current: 1488A
Case: SP6C
Semiconductor structure: transistor/transistor
Drain-source voltage: 200V
Drain current: 278A
On-state resistance: 5mΩ
Power dissipation: 1.25kW
Type of module: MOSFET transistor
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
APTM20AM05FG |
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Hersteller: MICROCHIP (MICROSEMI)
APTM20AM05FG Transistor modules MOSFET
APTM20AM05FG Transistor modules MOSFET
Produkt ist nicht verfügbar
APTM20AM06SG |
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Hersteller: MICROCHIP (MICROSEMI)
APTM20AM06SG Transistor modules MOSFET
APTM20AM06SG Transistor modules MOSFET
Produkt ist nicht verfügbar
APTM20AM08FTG |
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Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 200V; 155A; SP4; Ugs: ±30V; Idm: 832A; 781W
Mechanical mounting: screw
Electrical mounting: FASTON connectors; screw
Type of module: MOSFET transistor
Semiconductor structure: diode/transistor
Case: SP4
On-state resistance: 10mΩ
Gate-source voltage: ±30V
Topology: MOSFET half-bridge; NTC thermistor
Pulsed drain current: 832A
Power dissipation: 781W
Technology: FREDFET; POWER MOS 7®
Drain current: 155A
Drain-source voltage: 200V
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 200V; 155A; SP4; Ugs: ±30V; Idm: 832A; 781W
Mechanical mounting: screw
Electrical mounting: FASTON connectors; screw
Type of module: MOSFET transistor
Semiconductor structure: diode/transistor
Case: SP4
On-state resistance: 10mΩ
Gate-source voltage: ±30V
Topology: MOSFET half-bridge; NTC thermistor
Pulsed drain current: 832A
Power dissipation: 781W
Technology: FREDFET; POWER MOS 7®
Drain current: 155A
Drain-source voltage: 200V
Produkt ist nicht verfügbar
APTM20AM08FTG |
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Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 200V; 155A; SP4; Ugs: ±30V; Idm: 832A; 781W
Mechanical mounting: screw
Electrical mounting: FASTON connectors; screw
Type of module: MOSFET transistor
Semiconductor structure: diode/transistor
Case: SP4
On-state resistance: 10mΩ
Gate-source voltage: ±30V
Topology: MOSFET half-bridge; NTC thermistor
Pulsed drain current: 832A
Power dissipation: 781W
Technology: FREDFET; POWER MOS 7®
Drain current: 155A
Drain-source voltage: 200V
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 200V; 155A; SP4; Ugs: ±30V; Idm: 832A; 781W
Mechanical mounting: screw
Electrical mounting: FASTON connectors; screw
Type of module: MOSFET transistor
Semiconductor structure: diode/transistor
Case: SP4
On-state resistance: 10mΩ
Gate-source voltage: ±30V
Topology: MOSFET half-bridge; NTC thermistor
Pulsed drain current: 832A
Power dissipation: 781W
Technology: FREDFET; POWER MOS 7®
Drain current: 155A
Drain-source voltage: 200V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
APTM20AM10FTG |
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Hersteller: MICROCHIP (MICROSEMI)
APTM20AM10FTG Transistor modules MOSFET
APTM20AM10FTG Transistor modules MOSFET
Produkt ist nicht verfügbar
APTM20AM10STG |
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Hersteller: MICROCHIP (MICROSEMI)
APTM20AM10STG Transistor modules MOSFET
APTM20AM10STG Transistor modules MOSFET
Produkt ist nicht verfügbar
APTM20DAM04G |
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Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 200V; 278A; SP6C; Idm: 1488A; 1.25kW
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Technology: POWER MOS 7®
Gate-source voltage: ±30V
Topology: boost chopper
Pulsed drain current: 1488A
Case: SP6C
Semiconductor structure: diode/transistor
Drain-source voltage: 200V
Drain current: 278A
On-state resistance: 5mΩ
Power dissipation: 1.25kW
Type of module: MOSFET transistor
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 200V; 278A; SP6C; Idm: 1488A; 1.25kW
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Technology: POWER MOS 7®
Gate-source voltage: ±30V
Topology: boost chopper
Pulsed drain current: 1488A
Case: SP6C
Semiconductor structure: diode/transistor
Drain-source voltage: 200V
Drain current: 278A
On-state resistance: 5mΩ
Power dissipation: 1.25kW
Type of module: MOSFET transistor
Produkt ist nicht verfügbar
APTM20DAM04G |
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Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 200V; 278A; SP6C; Idm: 1488A; 1.25kW
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Technology: POWER MOS 7®
Gate-source voltage: ±30V
Topology: boost chopper
Pulsed drain current: 1488A
Case: SP6C
Semiconductor structure: diode/transistor
Drain-source voltage: 200V
Drain current: 278A
On-state resistance: 5mΩ
Power dissipation: 1.25kW
Type of module: MOSFET transistor
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 200V; 278A; SP6C; Idm: 1488A; 1.25kW
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Technology: POWER MOS 7®
Gate-source voltage: ±30V
Topology: boost chopper
Pulsed drain current: 1488A
Case: SP6C
Semiconductor structure: diode/transistor
Drain-source voltage: 200V
Drain current: 278A
On-state resistance: 5mΩ
Power dissipation: 1.25kW
Type of module: MOSFET transistor
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
APTM20DAM05G |
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Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 200V; 237A; SP6C; Idm: 1268A; 1136W; screw
Case: SP6C
Topology: boost chopper
Drain-source voltage: 200V
Drain current: 237A
On-state resistance: 6mΩ
Power dissipation: 1136W
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 7®
Gate-source voltage: ±30V
Pulsed drain current: 1268A
Semiconductor structure: diode/transistor
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 200V; 237A; SP6C; Idm: 1268A; 1136W; screw
Case: SP6C
Topology: boost chopper
Drain-source voltage: 200V
Drain current: 237A
On-state resistance: 6mΩ
Power dissipation: 1136W
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 7®
Gate-source voltage: ±30V
Pulsed drain current: 1268A
Semiconductor structure: diode/transistor
Produkt ist nicht verfügbar
APTM20DAM05G |
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Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 200V; 237A; SP6C; Idm: 1268A; 1136W; screw
Case: SP6C
Topology: boost chopper
Drain-source voltage: 200V
Drain current: 237A
On-state resistance: 6mΩ
Power dissipation: 1136W
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 7®
Gate-source voltage: ±30V
Pulsed drain current: 1268A
Semiconductor structure: diode/transistor
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 200V; 237A; SP6C; Idm: 1268A; 1136W; screw
Case: SP6C
Topology: boost chopper
Drain-source voltage: 200V
Drain current: 237A
On-state resistance: 6mΩ
Power dissipation: 1136W
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 7®
Gate-source voltage: ±30V
Pulsed drain current: 1268A
Semiconductor structure: diode/transistor
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
APTM20DAM08TG |
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Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 200V; 155A; SP4; Idm: 832A; 781W; Ugs: ±30V
Type of module: MOSFET transistor
Semiconductor structure: diode/transistor
Drain-source voltage: 200V
Drain current: 155A
Case: SP4
Topology: boost chopper; NTC thermistor
Electrical mounting: FASTON connectors; screw
On-state resistance: 10mΩ
Pulsed drain current: 832A
Power dissipation: 781W
Technology: POWER MOS 7®
Gate-source voltage: ±30V
Mechanical mounting: screw
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 200V; 155A; SP4; Idm: 832A; 781W; Ugs: ±30V
Type of module: MOSFET transistor
Semiconductor structure: diode/transistor
Drain-source voltage: 200V
Drain current: 155A
Case: SP4
Topology: boost chopper; NTC thermistor
Electrical mounting: FASTON connectors; screw
On-state resistance: 10mΩ
Pulsed drain current: 832A
Power dissipation: 781W
Technology: POWER MOS 7®
Gate-source voltage: ±30V
Mechanical mounting: screw
Produkt ist nicht verfügbar
APTM20DAM08TG |
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Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 200V; 155A; SP4; Idm: 832A; 781W; Ugs: ±30V
Type of module: MOSFET transistor
Semiconductor structure: diode/transistor
Drain-source voltage: 200V
Drain current: 155A
Case: SP4
Topology: boost chopper; NTC thermistor
Electrical mounting: FASTON connectors; screw
On-state resistance: 10mΩ
Pulsed drain current: 832A
Power dissipation: 781W
Technology: POWER MOS 7®
Gate-source voltage: ±30V
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 200V; 155A; SP4; Idm: 832A; 781W; Ugs: ±30V
Type of module: MOSFET transistor
Semiconductor structure: diode/transistor
Drain-source voltage: 200V
Drain current: 155A
Case: SP4
Topology: boost chopper; NTC thermistor
Electrical mounting: FASTON connectors; screw
On-state resistance: 10mΩ
Pulsed drain current: 832A
Power dissipation: 781W
Technology: POWER MOS 7®
Gate-source voltage: ±30V
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
APTM20DUM04G |
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Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; transistor/transistor,common source; 200V; 278A; SP6C
Type of module: MOSFET transistor
Semiconductor structure: common source; transistor/transistor
Drain-source voltage: 200V
Drain current: 278A
Case: SP6C
Topology: MOSFET x2
Electrical mounting: FASTON connectors; screw
On-state resistance: 5mΩ
Pulsed drain current: 1488A
Power dissipation: 1.25kW
Technology: POWER MOS 7®
Gate-source voltage: ±30V
Mechanical mounting: screw
Category: Transistor modules MOSFET
Description: Module; transistor/transistor,common source; 200V; 278A; SP6C
Type of module: MOSFET transistor
Semiconductor structure: common source; transistor/transistor
Drain-source voltage: 200V
Drain current: 278A
Case: SP6C
Topology: MOSFET x2
Electrical mounting: FASTON connectors; screw
On-state resistance: 5mΩ
Pulsed drain current: 1488A
Power dissipation: 1.25kW
Technology: POWER MOS 7®
Gate-source voltage: ±30V
Mechanical mounting: screw
Produkt ist nicht verfügbar
APTM20DUM04G |
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Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; transistor/transistor,common source; 200V; 278A; SP6C
Type of module: MOSFET transistor
Semiconductor structure: common source; transistor/transistor
Drain-source voltage: 200V
Drain current: 278A
Case: SP6C
Topology: MOSFET x2
Electrical mounting: FASTON connectors; screw
On-state resistance: 5mΩ
Pulsed drain current: 1488A
Power dissipation: 1.25kW
Technology: POWER MOS 7®
Gate-source voltage: ±30V
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; transistor/transistor,common source; 200V; 278A; SP6C
Type of module: MOSFET transistor
Semiconductor structure: common source; transistor/transistor
Drain-source voltage: 200V
Drain current: 278A
Case: SP6C
Topology: MOSFET x2
Electrical mounting: FASTON connectors; screw
On-state resistance: 5mΩ
Pulsed drain current: 1488A
Power dissipation: 1.25kW
Technology: POWER MOS 7®
Gate-source voltage: ±30V
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
APTM20DUM05G |
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Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; transistor/transistor,common source; 200V; 237A; SP6C
Type of module: MOSFET transistor
Semiconductor structure: common source; transistor/transistor
Drain-source voltage: 200V
Drain current: 237A
Case: SP6C
Topology: MOSFET x2
Electrical mounting: FASTON connectors; screw
On-state resistance: 6mΩ
Pulsed drain current: 1268A
Power dissipation: 1136W
Technology: POWER MOS 7®
Gate-source voltage: ±30V
Mechanical mounting: screw
Category: Transistor modules MOSFET
Description: Module; transistor/transistor,common source; 200V; 237A; SP6C
Type of module: MOSFET transistor
Semiconductor structure: common source; transistor/transistor
Drain-source voltage: 200V
Drain current: 237A
Case: SP6C
Topology: MOSFET x2
Electrical mounting: FASTON connectors; screw
On-state resistance: 6mΩ
Pulsed drain current: 1268A
Power dissipation: 1136W
Technology: POWER MOS 7®
Gate-source voltage: ±30V
Mechanical mounting: screw
Produkt ist nicht verfügbar
APTM20DUM05G |
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Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; transistor/transistor,common source; 200V; 237A; SP6C
Type of module: MOSFET transistor
Semiconductor structure: common source; transistor/transistor
Drain-source voltage: 200V
Drain current: 237A
Case: SP6C
Topology: MOSFET x2
Electrical mounting: FASTON connectors; screw
On-state resistance: 6mΩ
Pulsed drain current: 1268A
Power dissipation: 1136W
Technology: POWER MOS 7®
Gate-source voltage: ±30V
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; transistor/transistor,common source; 200V; 237A; SP6C
Type of module: MOSFET transistor
Semiconductor structure: common source; transistor/transistor
Drain-source voltage: 200V
Drain current: 237A
Case: SP6C
Topology: MOSFET x2
Electrical mounting: FASTON connectors; screw
On-state resistance: 6mΩ
Pulsed drain current: 1268A
Power dissipation: 1136W
Technology: POWER MOS 7®
Gate-source voltage: ±30V
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
APTM20DUM08TG |
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Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; transistor/transistor,common source; 200V; 155A; SP4
Type of module: MOSFET transistor
Semiconductor structure: common source; transistor/transistor
Drain-source voltage: 200V
Drain current: 155A
Case: SP4
Topology: MOSFET x2; NTC thermistor
Electrical mounting: FASTON connectors; screw
On-state resistance: 10mΩ
Pulsed drain current: 832A
Power dissipation: 781W
Technology: POWER MOS 7®
Gate-source voltage: ±30V
Mechanical mounting: screw
Category: Transistor modules MOSFET
Description: Module; transistor/transistor,common source; 200V; 155A; SP4
Type of module: MOSFET transistor
Semiconductor structure: common source; transistor/transistor
Drain-source voltage: 200V
Drain current: 155A
Case: SP4
Topology: MOSFET x2; NTC thermistor
Electrical mounting: FASTON connectors; screw
On-state resistance: 10mΩ
Pulsed drain current: 832A
Power dissipation: 781W
Technology: POWER MOS 7®
Gate-source voltage: ±30V
Mechanical mounting: screw
Produkt ist nicht verfügbar
APTM20DUM08TG |
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Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; transistor/transistor,common source; 200V; 155A; SP4
Type of module: MOSFET transistor
Semiconductor structure: common source; transistor/transistor
Drain-source voltage: 200V
Drain current: 155A
Case: SP4
Topology: MOSFET x2; NTC thermistor
Electrical mounting: FASTON connectors; screw
On-state resistance: 10mΩ
Pulsed drain current: 832A
Power dissipation: 781W
Technology: POWER MOS 7®
Gate-source voltage: ±30V
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; transistor/transistor,common source; 200V; 155A; SP4
Type of module: MOSFET transistor
Semiconductor structure: common source; transistor/transistor
Drain-source voltage: 200V
Drain current: 155A
Case: SP4
Topology: MOSFET x2; NTC thermistor
Electrical mounting: FASTON connectors; screw
On-state resistance: 10mΩ
Pulsed drain current: 832A
Power dissipation: 781W
Technology: POWER MOS 7®
Gate-source voltage: ±30V
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
APTM20HM08FG |
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Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 200V; 155A; SP6C; Idm: 832A; 781W
Pulsed drain current: 832A
Power dissipation: 781W
Technology: FREDFET; POWER MOS 7®
Drain current: 155A
Drain-source voltage: 200V
Mechanical mounting: screw
Electrical mounting: FASTON connectors; screw
Gate-source voltage: ±30V
Type of module: MOSFET transistor
Semiconductor structure: transistor/transistor
Case: SP6C
On-state resistance: 10mΩ
Topology: H-bridge
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 200V; 155A; SP6C; Idm: 832A; 781W
Pulsed drain current: 832A
Power dissipation: 781W
Technology: FREDFET; POWER MOS 7®
Drain current: 155A
Drain-source voltage: 200V
Mechanical mounting: screw
Electrical mounting: FASTON connectors; screw
Gate-source voltage: ±30V
Type of module: MOSFET transistor
Semiconductor structure: transistor/transistor
Case: SP6C
On-state resistance: 10mΩ
Topology: H-bridge
Produkt ist nicht verfügbar
APTM20HM08FG |
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Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 200V; 155A; SP6C; Idm: 832A; 781W
Pulsed drain current: 832A
Power dissipation: 781W
Technology: FREDFET; POWER MOS 7®
Drain current: 155A
Drain-source voltage: 200V
Mechanical mounting: screw
Electrical mounting: FASTON connectors; screw
Gate-source voltage: ±30V
Type of module: MOSFET transistor
Semiconductor structure: transistor/transistor
Case: SP6C
On-state resistance: 10mΩ
Topology: H-bridge
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 200V; 155A; SP6C; Idm: 832A; 781W
Pulsed drain current: 832A
Power dissipation: 781W
Technology: FREDFET; POWER MOS 7®
Drain current: 155A
Drain-source voltage: 200V
Mechanical mounting: screw
Electrical mounting: FASTON connectors; screw
Gate-source voltage: ±30V
Type of module: MOSFET transistor
Semiconductor structure: transistor/transistor
Case: SP6C
On-state resistance: 10mΩ
Topology: H-bridge
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
APTM20HM10FG |
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Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 200V; 131A; SP6C; Idm: 700A; 694W
Case: SP6C
Mechanical mounting: screw
Electrical mounting: FASTON connectors; screw
Power dissipation: 694W
Type of module: MOSFET transistor
Technology: FREDFET; POWER MOS 7®
Gate-source voltage: ±30V
Topology: H-bridge
Pulsed drain current: 700A
Semiconductor structure: transistor/transistor
Drain-source voltage: 200V
Drain current: 131A
On-state resistance: 12mΩ
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 200V; 131A; SP6C; Idm: 700A; 694W
Case: SP6C
Mechanical mounting: screw
Electrical mounting: FASTON connectors; screw
Power dissipation: 694W
Type of module: MOSFET transistor
Technology: FREDFET; POWER MOS 7®
Gate-source voltage: ±30V
Topology: H-bridge
Pulsed drain current: 700A
Semiconductor structure: transistor/transistor
Drain-source voltage: 200V
Drain current: 131A
On-state resistance: 12mΩ
Produkt ist nicht verfügbar
APTM20HM10FG |
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Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 200V; 131A; SP6C; Idm: 700A; 694W
Case: SP6C
Mechanical mounting: screw
Electrical mounting: FASTON connectors; screw
Power dissipation: 694W
Type of module: MOSFET transistor
Technology: FREDFET; POWER MOS 7®
Gate-source voltage: ±30V
Topology: H-bridge
Pulsed drain current: 700A
Semiconductor structure: transistor/transistor
Drain-source voltage: 200V
Drain current: 131A
On-state resistance: 12mΩ
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 200V; 131A; SP6C; Idm: 700A; 694W
Case: SP6C
Mechanical mounting: screw
Electrical mounting: FASTON connectors; screw
Power dissipation: 694W
Type of module: MOSFET transistor
Technology: FREDFET; POWER MOS 7®
Gate-source voltage: ±30V
Topology: H-bridge
Pulsed drain current: 700A
Semiconductor structure: transistor/transistor
Drain-source voltage: 200V
Drain current: 131A
On-state resistance: 12mΩ
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
APTM20HM16FTG |
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Hersteller: MICROCHIP (MICROSEMI)
APTM20HM16FTG Transistor modules MOSFET
APTM20HM16FTG Transistor modules MOSFET
Produkt ist nicht verfügbar
APTM20HM20FTG |
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Hersteller: MICROCHIP (MICROSEMI)
APTM20HM20FTG Transistor modules MOSFET
APTM20HM20FTG Transistor modules MOSFET
Produkt ist nicht verfügbar
APTM20HM20STG |
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Hersteller: MICROCHIP (MICROSEMI)
APTM20HM20STG Transistor modules MOSFET
APTM20HM20STG Transistor modules MOSFET
Produkt ist nicht verfügbar
APTM20SKM04G |
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Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 200V; 278A; SP6C; Topology: buck chopper
Case: SP6C
Power dissipation: 1.25kW
Semiconductor structure: diode/transistor
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Topology: buck chopper
Technology: POWER MOS 7®
Pulsed drain current: 1488A
Gate-source voltage: ±30V
Type of module: MOSFET transistor
Drain-source voltage: 200V
Drain current: 278A
On-state resistance: 5mΩ
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 200V; 278A; SP6C; Topology: buck chopper
Case: SP6C
Power dissipation: 1.25kW
Semiconductor structure: diode/transistor
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Topology: buck chopper
Technology: POWER MOS 7®
Pulsed drain current: 1488A
Gate-source voltage: ±30V
Type of module: MOSFET transistor
Drain-source voltage: 200V
Drain current: 278A
On-state resistance: 5mΩ
Produkt ist nicht verfügbar
APTM20SKM04G |
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Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 200V; 278A; SP6C; Topology: buck chopper
Case: SP6C
Power dissipation: 1.25kW
Semiconductor structure: diode/transistor
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Topology: buck chopper
Technology: POWER MOS 7®
Pulsed drain current: 1488A
Gate-source voltage: ±30V
Type of module: MOSFET transistor
Drain-source voltage: 200V
Drain current: 278A
On-state resistance: 5mΩ
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 200V; 278A; SP6C; Topology: buck chopper
Case: SP6C
Power dissipation: 1.25kW
Semiconductor structure: diode/transistor
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Topology: buck chopper
Technology: POWER MOS 7®
Pulsed drain current: 1488A
Gate-source voltage: ±30V
Type of module: MOSFET transistor
Drain-source voltage: 200V
Drain current: 278A
On-state resistance: 5mΩ
Produkt ist nicht verfügbar
APTM20SKM08TG |
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Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 200V; 155A; SP4; Ugs: ±30V; Idm: 832A; 781W
Mechanical mounting: screw
Electrical mounting: FASTON connectors; screw
Type of module: MOSFET transistor
Semiconductor structure: diode/transistor
Case: SP4
On-state resistance: 10mΩ
Gate-source voltage: ±30V
Topology: buck chopper; NTC thermistor
Pulsed drain current: 832A
Power dissipation: 781W
Technology: POWER MOS 7®
Drain current: 155A
Drain-source voltage: 200V
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 200V; 155A; SP4; Ugs: ±30V; Idm: 832A; 781W
Mechanical mounting: screw
Electrical mounting: FASTON connectors; screw
Type of module: MOSFET transistor
Semiconductor structure: diode/transistor
Case: SP4
On-state resistance: 10mΩ
Gate-source voltage: ±30V
Topology: buck chopper; NTC thermistor
Pulsed drain current: 832A
Power dissipation: 781W
Technology: POWER MOS 7®
Drain current: 155A
Drain-source voltage: 200V
Produkt ist nicht verfügbar
APTM20SKM08TG |
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Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 200V; 155A; SP4; Ugs: ±30V; Idm: 832A; 781W
Mechanical mounting: screw
Electrical mounting: FASTON connectors; screw
Type of module: MOSFET transistor
Semiconductor structure: diode/transistor
Case: SP4
On-state resistance: 10mΩ
Gate-source voltage: ±30V
Topology: buck chopper; NTC thermistor
Pulsed drain current: 832A
Power dissipation: 781W
Technology: POWER MOS 7®
Drain current: 155A
Drain-source voltage: 200V
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 200V; 155A; SP4; Ugs: ±30V; Idm: 832A; 781W
Mechanical mounting: screw
Electrical mounting: FASTON connectors; screw
Type of module: MOSFET transistor
Semiconductor structure: diode/transistor
Case: SP4
On-state resistance: 10mΩ
Gate-source voltage: ±30V
Topology: buck chopper; NTC thermistor
Pulsed drain current: 832A
Power dissipation: 781W
Technology: POWER MOS 7®
Drain current: 155A
Drain-source voltage: 200V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
APTM20TAM16FPG |
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Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 200V; 77A; SP6P; Press-in PCB; 390W
Power dissipation: 390W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: FREDFET; POWER MOS 7®
Gate-source voltage: ±30V
Topology: MOSFET x3 half-bridge
Pulsed drain current: 416A
Case: SP6P
Semiconductor structure: transistor/transistor
Drain-source voltage: 200V
Drain current: 77A
On-state resistance: 19mΩ
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 200V; 77A; SP6P; Press-in PCB; 390W
Power dissipation: 390W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: FREDFET; POWER MOS 7®
Gate-source voltage: ±30V
Topology: MOSFET x3 half-bridge
Pulsed drain current: 416A
Case: SP6P
Semiconductor structure: transistor/transistor
Drain-source voltage: 200V
Drain current: 77A
On-state resistance: 19mΩ
Produkt ist nicht verfügbar
APTM20TAM16FPG |
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Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 200V; 77A; SP6P; Press-in PCB; 390W
Power dissipation: 390W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: FREDFET; POWER MOS 7®
Gate-source voltage: ±30V
Topology: MOSFET x3 half-bridge
Pulsed drain current: 416A
Case: SP6P
Semiconductor structure: transistor/transistor
Drain-source voltage: 200V
Drain current: 77A
On-state resistance: 19mΩ
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 200V; 77A; SP6P; Press-in PCB; 390W
Power dissipation: 390W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: FREDFET; POWER MOS 7®
Gate-source voltage: ±30V
Topology: MOSFET x3 half-bridge
Pulsed drain current: 416A
Case: SP6P
Semiconductor structure: transistor/transistor
Drain-source voltage: 200V
Drain current: 77A
On-state resistance: 19mΩ
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
APTM20UM03FAG |
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Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 200V; 434A; SP6C; Idm: 2320A; 2.27kW
Technology: FREDFET; POWER MOS 7®
Drain-source voltage: 200V
Drain current: 434A
Pulsed drain current: 2320A
Power dissipation: 2.27kW
Case: SP6C
Gate-source voltage: ±30V
On-state resistance: 3.6mΩ
Semiconductor structure: diode/transistor
Electrical mounting: FASTON connectors; screw
Topology: single transistor + series diode - parrallel diode
Mechanical mounting: screw
Type of module: MOSFET transistor
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 200V; 434A; SP6C; Idm: 2320A; 2.27kW
Technology: FREDFET; POWER MOS 7®
Drain-source voltage: 200V
Drain current: 434A
Pulsed drain current: 2320A
Power dissipation: 2.27kW
Case: SP6C
Gate-source voltage: ±30V
On-state resistance: 3.6mΩ
Semiconductor structure: diode/transistor
Electrical mounting: FASTON connectors; screw
Topology: single transistor + series diode - parrallel diode
Mechanical mounting: screw
Type of module: MOSFET transistor
Produkt ist nicht verfügbar
APTM20UM03FAG |
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Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 200V; 434A; SP6C; Idm: 2320A; 2.27kW
Technology: FREDFET; POWER MOS 7®
Drain-source voltage: 200V
Drain current: 434A
Pulsed drain current: 2320A
Power dissipation: 2.27kW
Case: SP6C
Gate-source voltage: ±30V
On-state resistance: 3.6mΩ
Semiconductor structure: diode/transistor
Electrical mounting: FASTON connectors; screw
Topology: single transistor + series diode - parrallel diode
Mechanical mounting: screw
Type of module: MOSFET transistor
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 200V; 434A; SP6C; Idm: 2320A; 2.27kW
Technology: FREDFET; POWER MOS 7®
Drain-source voltage: 200V
Drain current: 434A
Pulsed drain current: 2320A
Power dissipation: 2.27kW
Case: SP6C
Gate-source voltage: ±30V
On-state resistance: 3.6mΩ
Semiconductor structure: diode/transistor
Electrical mounting: FASTON connectors; screw
Topology: single transistor + series diode - parrallel diode
Mechanical mounting: screw
Type of module: MOSFET transistor
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
APTM20UM04SAG |
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Hersteller: MICROCHIP (MICROSEMI)
APTM20UM04SAG Transistor modules MOSFET
APTM20UM04SAG Transistor modules MOSFET
Produkt ist nicht verfügbar
APTM50AM17FG |
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Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 500V; 135A; SP6C; Idm: 720A; 1.25kW
Pulsed drain current: 720A
Power dissipation: 1.25kW
Technology: FREDFET; POWER MOS 7®
Drain current: 135A
Drain-source voltage: 500V
Mechanical mounting: screw
Electrical mounting: FASTON connectors; screw
Gate-source voltage: ±30V
Type of module: MOSFET transistor
Semiconductor structure: transistor/transistor
Case: SP6C
On-state resistance: 20mΩ
Topology: MOSFET half-bridge
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 500V; 135A; SP6C; Idm: 720A; 1.25kW
Pulsed drain current: 720A
Power dissipation: 1.25kW
Technology: FREDFET; POWER MOS 7®
Drain current: 135A
Drain-source voltage: 500V
Mechanical mounting: screw
Electrical mounting: FASTON connectors; screw
Gate-source voltage: ±30V
Type of module: MOSFET transistor
Semiconductor structure: transistor/transistor
Case: SP6C
On-state resistance: 20mΩ
Topology: MOSFET half-bridge
Produkt ist nicht verfügbar