Produkte > MICROCHIP (MICROSEMI) > Alle Produkte des Herstellers MICROCHIP (MICROSEMI) (4150) > Seite 62 nach 70
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MSC080SMA330B4 | MICROCHIP (MICROSEMI) |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 3.3kV; 26A; Idm: 100A; 381W Technology: SiC Mounting: THT Features of semiconductor devices: Kelvin terminal Case: TO247-4 Power dissipation: 381W Gate charge: 55nC Kind of channel: enhanced Pulsed drain current: 100A Drain-source voltage: 3.3kV Drain current: 26A On-state resistance: 0.105Ω Type of transistor: N-MOSFET Polarisation: unipolar |
Produkt ist nicht verfügbar |
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MSC080SMA330B4 | MICROCHIP (MICROSEMI) |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 3.3kV; 26A; Idm: 100A; 381W Technology: SiC Mounting: THT Features of semiconductor devices: Kelvin terminal Case: TO247-4 Power dissipation: 381W Gate charge: 55nC Kind of channel: enhanced Pulsed drain current: 100A Drain-source voltage: 3.3kV Drain current: 26A On-state resistance: 0.105Ω Type of transistor: N-MOSFET Polarisation: unipolar Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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MSC090SDA330B2 | MICROCHIP (MICROSEMI) | MSC090SDA330B2 THT Schottky diodes |
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MSC090SMA070B | MICROCHIP (MICROSEMI) |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 700V; 20A; Idm: 69A; 90W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 700V Drain current: 20A Pulsed drain current: 69A Power dissipation: 90W Case: TO247-3 On-state resistance: 108mΩ Mounting: THT Gate charge: 38nC Kind of channel: enhanced |
auf Bestellung 35 Stücke: Lieferzeit 14-21 Tag (e) |
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MSC090SMA070B | MICROCHIP (MICROSEMI) |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 700V; 20A; Idm: 69A; 90W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 700V Drain current: 20A Pulsed drain current: 69A Power dissipation: 90W Case: TO247-3 On-state resistance: 108mΩ Mounting: THT Gate charge: 38nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 35 Stücke: Lieferzeit 7-14 Tag (e) |
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MSC090SMA070S | MICROCHIP (MICROSEMI) |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 700V; 18A; Idm: 65A; 91W; D3PAK Polarisation: unipolar Drain-source voltage: 700V Power dissipation: 91W Case: D3PAK Mounting: SMD Gate charge: 38nC Technology: SiC Kind of channel: enhanced Drain current: 18A Pulsed drain current: 65A On-state resistance: 0.115Ω Type of transistor: N-MOSFET |
auf Bestellung 60 Stücke: Lieferzeit 14-21 Tag (e) |
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MSC090SMA070S | MICROCHIP (MICROSEMI) |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 700V; 18A; Idm: 65A; 91W; D3PAK Polarisation: unipolar Drain-source voltage: 700V Power dissipation: 91W Case: D3PAK Mounting: SMD Gate charge: 38nC Technology: SiC Kind of channel: enhanced Drain current: 18A Pulsed drain current: 65A On-state resistance: 0.115Ω Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke |
auf Bestellung 60 Stücke: Lieferzeit 7-14 Tag (e) |
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MSC100SM70JCU2 | MICROCHIP (MICROSEMI) |
![]() Description: Module; SiC diode/transistor; 700V; 98A; SOT227B; screw; Idm: 250A Technology: SiC Drain-source voltage: 700V Drain current: 98A Pulsed drain current: 250A Power dissipation: 365W Case: SOT227B On-state resistance: 19mΩ Semiconductor structure: SiC diode/transistor Electrical mounting: screw Topology: boost chopper Mechanical mounting: screw Type of module: MOSFET transistor |
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MSC100SM70JCU2 | MICROCHIP (MICROSEMI) |
![]() Description: Module; SiC diode/transistor; 700V; 98A; SOT227B; screw; Idm: 250A Technology: SiC Drain-source voltage: 700V Drain current: 98A Pulsed drain current: 250A Power dissipation: 365W Case: SOT227B On-state resistance: 19mΩ Semiconductor structure: SiC diode/transistor Electrical mounting: screw Topology: boost chopper Mechanical mounting: screw Type of module: MOSFET transistor Anzahl je Verpackung: 1 Stücke |
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MSC100SM70JCU3 | MICROCHIP (MICROSEMI) |
![]() Description: Module; SiC diode/transistor; 700V; 98A; SOT227B; screw; Idm: 250A Technology: SiC Drain-source voltage: 700V Drain current: 98A Pulsed drain current: 250A Power dissipation: 365W Case: SOT227B On-state resistance: 19mΩ Semiconductor structure: SiC diode/transistor Electrical mounting: screw Topology: buck chopper Mechanical mounting: screw Type of module: MOSFET transistor |
Produkt ist nicht verfügbar |
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MSC100SM70JCU3 | MICROCHIP (MICROSEMI) |
![]() Description: Module; SiC diode/transistor; 700V; 98A; SOT227B; screw; Idm: 250A Technology: SiC Drain-source voltage: 700V Drain current: 98A Pulsed drain current: 250A Power dissipation: 365W Case: SOT227B On-state resistance: 19mΩ Semiconductor structure: SiC diode/transistor Electrical mounting: screw Topology: buck chopper Mechanical mounting: screw Type of module: MOSFET transistor Anzahl je Verpackung: 1 Stücke |
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MSC130SM120JCU2 | MICROCHIP (MICROSEMI) |
![]() Description: Module; SiC diode/transistor; 1.2kV; 138A; SOT227B; screw; 745W Type of module: MOSFET transistor Semiconductor structure: SiC diode/transistor Drain-source voltage: 1.2kV Drain current: 138A Case: SOT227B Topology: boost chopper Electrical mounting: screw On-state resistance: 16mΩ Pulsed drain current: 350A Power dissipation: 745W Technology: SiC Mechanical mounting: screw |
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MSC130SM120JCU2 | MICROCHIP (MICROSEMI) |
![]() Description: Module; SiC diode/transistor; 1.2kV; 138A; SOT227B; screw; 745W Type of module: MOSFET transistor Semiconductor structure: SiC diode/transistor Drain-source voltage: 1.2kV Drain current: 138A Case: SOT227B Topology: boost chopper Electrical mounting: screw On-state resistance: 16mΩ Pulsed drain current: 350A Power dissipation: 745W Technology: SiC Mechanical mounting: screw Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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MSC130SM120JCU3 | MICROCHIP (MICROSEMI) |
![]() Description: Module; SiC diode/transistor; 1.2kV; 138A; SOT227B; screw; 745W Type of module: MOSFET transistor Semiconductor structure: SiC diode/transistor Drain-source voltage: 1.2kV Drain current: 138A Case: SOT227B Topology: buck chopper Electrical mounting: screw On-state resistance: 16mΩ Pulsed drain current: 350A Power dissipation: 745W Technology: SiC Mechanical mounting: screw |
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MSC130SM120JCU3 | MICROCHIP (MICROSEMI) |
![]() Description: Module; SiC diode/transistor; 1.2kV; 138A; SOT227B; screw; 745W Type of module: MOSFET transistor Semiconductor structure: SiC diode/transistor Drain-source voltage: 1.2kV Drain current: 138A Case: SOT227B Topology: buck chopper Electrical mounting: screw On-state resistance: 16mΩ Pulsed drain current: 350A Power dissipation: 745W Technology: SiC Mechanical mounting: screw Anzahl je Verpackung: 1 Stücke |
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MSC180SMA120B | MICROCHIP (MICROSEMI) |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 15A; Idm: 40A; 127W Polarisation: unipolar Drain-source voltage: 1.2kV Power dissipation: 127W Case: TO247-3 Mounting: THT Gate charge: 34nC Technology: SiC Kind of channel: enhanced Drain current: 15A Pulsed drain current: 40A On-state resistance: 0.225Ω Type of transistor: N-MOSFET |
auf Bestellung 40 Stücke: Lieferzeit 14-21 Tag (e) |
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MSC180SMA120B | MICROCHIP (MICROSEMI) |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 15A; Idm: 40A; 127W Polarisation: unipolar Drain-source voltage: 1.2kV Power dissipation: 127W Case: TO247-3 Mounting: THT Gate charge: 34nC Technology: SiC Kind of channel: enhanced Drain current: 15A Pulsed drain current: 40A On-state resistance: 0.225Ω Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke |
auf Bestellung 40 Stücke: Lieferzeit 7-14 Tag (e) |
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MSC180SMA120S | MICROCHIP (MICROSEMI) |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 15A; Idm: 40A; 125W Polarisation: unipolar Drain-source voltage: 1.2kV Power dissipation: 125W Case: D3PAK Mounting: SMD Gate charge: 34nC Technology: SiC Kind of channel: enhanced Drain current: 15A Pulsed drain current: 40A On-state resistance: 0.225Ω Type of transistor: N-MOSFET |
auf Bestellung 50 Stücke: Lieferzeit 14-21 Tag (e) |
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MSC180SMA120S | MICROCHIP (MICROSEMI) |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 15A; Idm: 40A; 125W Polarisation: unipolar Drain-source voltage: 1.2kV Power dissipation: 125W Case: D3PAK Mounting: SMD Gate charge: 34nC Technology: SiC Kind of channel: enhanced Drain current: 15A Pulsed drain current: 40A On-state resistance: 0.225Ω Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke |
auf Bestellung 50 Stücke: Lieferzeit 7-14 Tag (e) |
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MSC2X100SDA070J | MICROCHIP (MICROSEMI) |
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MSC2X100SDA120J | MICROCHIP (MICROSEMI) |
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MSC2X101SDA070J | MICROCHIP (MICROSEMI) |
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MSC2X101SDA120J | MICROCHIP (MICROSEMI) |
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MSC2X30SDA070J | MICROCHIP (MICROSEMI) | MSC2X30SDA070J Diode modules |
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MSC2X30SDA120J | MICROCHIP (MICROSEMI) | MSC2X30SDA120J Diode modules |
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MSC2X30SDA170J | MICROCHIP (MICROSEMI) | MSC2X30SDA170J Diode modules |
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MSC2X31SDA070J | MICROCHIP (MICROSEMI) | MSC2X31SDA070J Diode modules |
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MSC2X31SDA120J | MICROCHIP (MICROSEMI) | MSC2X31SDA120J Diode modules |
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MSC2X31SDA170J | MICROCHIP (MICROSEMI) | MSC2X31SDA170J Diode modules |
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MSC2X50SDA070J | MICROCHIP (MICROSEMI) |
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MSC2X50SDA120J | MICROCHIP (MICROSEMI) |
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MSC2X50SDA170J | MICROCHIP (MICROSEMI) | MSC2X50SDA170J Diode modules |
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MSC2X51SDA070J | MICROCHIP (MICROSEMI) |
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MSC2X51SDA120J | MICROCHIP (MICROSEMI) |
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MSC2X51SDA170J | MICROCHIP (MICROSEMI) | MSC2X51SDA170J Diode modules |
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MSC360SMA120B | MICROCHIP (MICROSEMI) |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 8A; Idm: 28A; 78W Polarisation: unipolar Drain-source voltage: 1.2kV Power dissipation: 78W Case: TO247-3 Mounting: THT Gate charge: 21nC Technology: SiC Kind of channel: enhanced Drain current: 8A Pulsed drain current: 28A On-state resistance: 0.45Ω Type of transistor: N-MOSFET |
auf Bestellung 60 Stücke: Lieferzeit 14-21 Tag (e) |
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MSC360SMA120B | MICROCHIP (MICROSEMI) |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 8A; Idm: 28A; 78W Polarisation: unipolar Drain-source voltage: 1.2kV Power dissipation: 78W Case: TO247-3 Mounting: THT Gate charge: 21nC Technology: SiC Kind of channel: enhanced Drain current: 8A Pulsed drain current: 28A On-state resistance: 0.45Ω Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke |
auf Bestellung 60 Stücke: Lieferzeit 7-14 Tag (e) |
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MSC360SMA120S | MICROCHIP (MICROSEMI) |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 8A; Idm: 27A; 71W; D3PAK Polarisation: unipolar Drain-source voltage: 1.2kV Power dissipation: 71W Case: D3PAK Mounting: SMD Gate charge: 21nC Technology: SiC Kind of channel: enhanced Drain current: 8A Pulsed drain current: 27A On-state resistance: 0.45Ω Type of transistor: N-MOSFET |
auf Bestellung 67 Stücke: Lieferzeit 14-21 Tag (e) |
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MSC360SMA120S | MICROCHIP (MICROSEMI) |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 8A; Idm: 27A; 71W; D3PAK Polarisation: unipolar Drain-source voltage: 1.2kV Power dissipation: 71W Case: D3PAK Mounting: SMD Gate charge: 21nC Technology: SiC Kind of channel: enhanced Drain current: 8A Pulsed drain current: 27A On-state resistance: 0.45Ω Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke |
auf Bestellung 67 Stücke: Lieferzeit 7-14 Tag (e) |
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MSC400SMA330B4 | MICROCHIP (MICROSEMI) |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 3.3kV; 7A; Idm: 27A; 131W Case: TO247-4 Drain-source voltage: 3.3kV Drain current: 7A On-state resistance: 0.52Ω Type of transistor: N-MOSFET Power dissipation: 131W Polarisation: unipolar Features of semiconductor devices: Kelvin terminal Gate charge: 37nC Technology: SiC Kind of channel: enhanced Pulsed drain current: 27A Mounting: THT |
Produkt ist nicht verfügbar |
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MSC400SMA330B4 | MICROCHIP (MICROSEMI) |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 3.3kV; 7A; Idm: 27A; 131W Case: TO247-4 Drain-source voltage: 3.3kV Drain current: 7A On-state resistance: 0.52Ω Type of transistor: N-MOSFET Power dissipation: 131W Polarisation: unipolar Features of semiconductor devices: Kelvin terminal Gate charge: 37nC Technology: SiC Kind of channel: enhanced Pulsed drain current: 27A Mounting: THT Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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MSC40SM120JCU2 | MICROCHIP (MICROSEMI) |
![]() Description: Module; SiC diode/transistor; 1.2kV; 44A; SOT227B; screw; Idm: 110A Case: SOT227B Semiconductor structure: SiC diode/transistor Electrical mounting: screw Mechanical mounting: screw Topology: boost chopper Technology: SiC Power dissipation: 245W Pulsed drain current: 110A Type of module: MOSFET transistor Drain-source voltage: 1.2kV Drain current: 44A On-state resistance: 50mΩ |
Produkt ist nicht verfügbar |
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MSC40SM120JCU2 | MICROCHIP (MICROSEMI) |
![]() Description: Module; SiC diode/transistor; 1.2kV; 44A; SOT227B; screw; Idm: 110A Case: SOT227B Semiconductor structure: SiC diode/transistor Electrical mounting: screw Mechanical mounting: screw Topology: boost chopper Technology: SiC Power dissipation: 245W Pulsed drain current: 110A Type of module: MOSFET transistor Drain-source voltage: 1.2kV Drain current: 44A On-state resistance: 50mΩ |
Produkt ist nicht verfügbar |
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MSC40SM120JCU3 | MICROCHIP (MICROSEMI) |
![]() Description: Module; SiC diode/transistor; 1.2kV; 44A; SOT227B; screw; Idm: 110A Case: SOT227B Semiconductor structure: SiC diode/transistor Electrical mounting: screw Mechanical mounting: screw Topology: buck chopper Technology: SiC Power dissipation: 245W Pulsed drain current: 110A Type of module: MOSFET transistor Drain-source voltage: 1.2kV Drain current: 44A On-state resistance: 50mΩ |
Produkt ist nicht verfügbar |
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MSC40SM120JCU3 | MICROCHIP (MICROSEMI) |
![]() Description: Module; SiC diode/transistor; 1.2kV; 44A; SOT227B; screw; Idm: 110A Case: SOT227B Semiconductor structure: SiC diode/transistor Electrical mounting: screw Mechanical mounting: screw Topology: buck chopper Technology: SiC Power dissipation: 245W Pulsed drain current: 110A Type of module: MOSFET transistor Drain-source voltage: 1.2kV Drain current: 44A On-state resistance: 50mΩ |
Produkt ist nicht verfügbar |
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MSC50DC120HJ | MICROCHIP (MICROSEMI) |
![]() Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 50A; screw; screw Version: module Technology: SiC Features of semiconductor devices: Schottky Mechanical mounting: screw Leads: M4 screws Max. off-state voltage: 1.2kV Electrical mounting: screw Load current: 50A Kind of package: tube Case: SOT227B Type of bridge rectifier: single-phase Max. forward voltage: 2.1V |
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MSC50DC120HJ | MICROCHIP (MICROSEMI) |
![]() Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 50A; screw; screw Version: module Technology: SiC Features of semiconductor devices: Schottky Mechanical mounting: screw Leads: M4 screws Max. off-state voltage: 1.2kV Electrical mounting: screw Load current: 50A Kind of package: tube Case: SOT227B Type of bridge rectifier: single-phase Max. forward voltage: 2.1V Anzahl je Verpackung: 1 Stücke |
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MSC50DC170HJ | MICROCHIP (MICROSEMI) |
![]() Description: Bridge rectifier: single-phase; Urmax: 1.7kV; If: 50A; screw; screw Version: module Technology: SiC Features of semiconductor devices: Schottky Mechanical mounting: screw Leads: M4 screws Max. off-state voltage: 1.7kV Electrical mounting: screw Load current: 50A Kind of package: tube Case: SOT227B Type of bridge rectifier: single-phase Max. forward voltage: 2V |
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MSC50DC170HJ | MICROCHIP (MICROSEMI) |
![]() Description: Bridge rectifier: single-phase; Urmax: 1.7kV; If: 50A; screw; screw Version: module Technology: SiC Features of semiconductor devices: Schottky Mechanical mounting: screw Leads: M4 screws Max. off-state voltage: 1.7kV Electrical mounting: screw Load current: 50A Kind of package: tube Case: SOT227B Type of bridge rectifier: single-phase Max. forward voltage: 2V Anzahl je Verpackung: 1 Stücke |
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MSC50DC70HJ | MICROCHIP (MICROSEMI) |
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MSC70SM120JCU2 | MICROCHIP (MICROSEMI) |
![]() Description: Module; SiC diode/transistor; 1.2kV; 71A; SOT227B; screw; Idm: 180A Type of module: MOSFET transistor Technology: SiC Topology: boost chopper Pulsed drain current: 180A Case: SOT227B Semiconductor structure: SiC diode/transistor Drain-source voltage: 1.2kV Drain current: 71A On-state resistance: 31mΩ Power dissipation: 395W Electrical mounting: screw Mechanical mounting: screw |
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MSC70SM120JCU2 | MICROCHIP (MICROSEMI) |
![]() Description: Module; SiC diode/transistor; 1.2kV; 71A; SOT227B; screw; Idm: 180A Type of module: MOSFET transistor Technology: SiC Topology: boost chopper Pulsed drain current: 180A Case: SOT227B Semiconductor structure: SiC diode/transistor Drain-source voltage: 1.2kV Drain current: 71A On-state resistance: 31mΩ Power dissipation: 395W Electrical mounting: screw Mechanical mounting: screw Anzahl je Verpackung: 1 Stücke |
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MSC70SM120JCU3 | MICROCHIP (MICROSEMI) |
![]() Description: Module; SiC diode/transistor; 1.2kV; 71A; SOT227B; screw; Idm: 180A Type of module: MOSFET transistor Technology: SiC Topology: buck chopper Pulsed drain current: 180A Case: SOT227B Semiconductor structure: SiC diode/transistor Drain-source voltage: 1.2kV Drain current: 71A On-state resistance: 31mΩ Power dissipation: 395W Electrical mounting: screw Mechanical mounting: screw |
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MSC70SM120JCU3 | MICROCHIP (MICROSEMI) |
![]() Description: Module; SiC diode/transistor; 1.2kV; 71A; SOT227B; screw; Idm: 180A Type of module: MOSFET transistor Technology: SiC Topology: buck chopper Pulsed drain current: 180A Case: SOT227B Semiconductor structure: SiC diode/transistor Drain-source voltage: 1.2kV Drain current: 71A On-state resistance: 31mΩ Power dissipation: 395W Electrical mounting: screw Mechanical mounting: screw Anzahl je Verpackung: 1 Stücke |
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MSC750SMA170B | MICROCHIP (MICROSEMI) |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 5A; Idm: 12A; 68W Polarisation: unipolar Drain-source voltage: 1.7kV Power dissipation: 68W Case: TO247-3 Mounting: THT Gate charge: 18nC Technology: SiC Kind of channel: enhanced Drain current: 5A Pulsed drain current: 12A On-state resistance: 940mΩ Type of transistor: N-MOSFET |
auf Bestellung 37 Stücke: Lieferzeit 14-21 Tag (e) |
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MSC750SMA170B | MICROCHIP (MICROSEMI) |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 5A; Idm: 12A; 68W Polarisation: unipolar Drain-source voltage: 1.7kV Power dissipation: 68W Case: TO247-3 Mounting: THT Gate charge: 18nC Technology: SiC Kind of channel: enhanced Drain current: 5A Pulsed drain current: 12A On-state resistance: 940mΩ Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke |
auf Bestellung 37 Stücke: Lieferzeit 7-14 Tag (e) |
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MSC750SMA170B4 | MICROCHIP (MICROSEMI) |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 5A; Idm: 12A; 68W Case: TO247-4 Mounting: THT Drain-source voltage: 1.7kV Drain current: 5A On-state resistance: 940mΩ Type of transistor: N-MOSFET Power dissipation: 68W Polarisation: unipolar Features of semiconductor devices: Kelvin terminal Gate charge: 11nC Technology: SiC Kind of channel: enhanced Pulsed drain current: 12A |
Produkt ist nicht verfügbar |
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MSC750SMA170B4 | MICROCHIP (MICROSEMI) |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 5A; Idm: 12A; 68W Case: TO247-4 Mounting: THT Drain-source voltage: 1.7kV Drain current: 5A On-state resistance: 940mΩ Type of transistor: N-MOSFET Power dissipation: 68W Polarisation: unipolar Features of semiconductor devices: Kelvin terminal Gate charge: 11nC Technology: SiC Kind of channel: enhanced Pulsed drain current: 12A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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MSC750SMA170S | MICROCHIP (MICROSEMI) |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 4A; Idm: 12A; 63W; D3PAK Case: D3PAK Mounting: SMD Drain-source voltage: 1.7kV Drain current: 4A On-state resistance: 940mΩ Type of transistor: N-MOSFET Power dissipation: 63W Polarisation: unipolar Gate charge: 18nC Technology: SiC Kind of channel: enhanced Pulsed drain current: 12A |
Produkt ist nicht verfügbar |
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MSC750SMA170S | MICROCHIP (MICROSEMI) |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 4A; Idm: 12A; 63W; D3PAK Case: D3PAK Mounting: SMD Drain-source voltage: 1.7kV Drain current: 4A On-state resistance: 940mΩ Type of transistor: N-MOSFET Power dissipation: 63W Polarisation: unipolar Gate charge: 18nC Technology: SiC Kind of channel: enhanced Pulsed drain current: 12A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
MSC080SMA330B4 |
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Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 3.3kV; 26A; Idm: 100A; 381W
Technology: SiC
Mounting: THT
Features of semiconductor devices: Kelvin terminal
Case: TO247-4
Power dissipation: 381W
Gate charge: 55nC
Kind of channel: enhanced
Pulsed drain current: 100A
Drain-source voltage: 3.3kV
Drain current: 26A
On-state resistance: 0.105Ω
Type of transistor: N-MOSFET
Polarisation: unipolar
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 3.3kV; 26A; Idm: 100A; 381W
Technology: SiC
Mounting: THT
Features of semiconductor devices: Kelvin terminal
Case: TO247-4
Power dissipation: 381W
Gate charge: 55nC
Kind of channel: enhanced
Pulsed drain current: 100A
Drain-source voltage: 3.3kV
Drain current: 26A
On-state resistance: 0.105Ω
Type of transistor: N-MOSFET
Polarisation: unipolar
Produkt ist nicht verfügbar
MSC080SMA330B4 |
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Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 3.3kV; 26A; Idm: 100A; 381W
Technology: SiC
Mounting: THT
Features of semiconductor devices: Kelvin terminal
Case: TO247-4
Power dissipation: 381W
Gate charge: 55nC
Kind of channel: enhanced
Pulsed drain current: 100A
Drain-source voltage: 3.3kV
Drain current: 26A
On-state resistance: 0.105Ω
Type of transistor: N-MOSFET
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 3.3kV; 26A; Idm: 100A; 381W
Technology: SiC
Mounting: THT
Features of semiconductor devices: Kelvin terminal
Case: TO247-4
Power dissipation: 381W
Gate charge: 55nC
Kind of channel: enhanced
Pulsed drain current: 100A
Drain-source voltage: 3.3kV
Drain current: 26A
On-state resistance: 0.105Ω
Type of transistor: N-MOSFET
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
MSC090SDA330B2 |
Hersteller: MICROCHIP (MICROSEMI)
MSC090SDA330B2 THT Schottky diodes
MSC090SDA330B2 THT Schottky diodes
Produkt ist nicht verfügbar
MSC090SMA070B |
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Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 700V; 20A; Idm: 69A; 90W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 20A
Pulsed drain current: 69A
Power dissipation: 90W
Case: TO247-3
On-state resistance: 108mΩ
Mounting: THT
Gate charge: 38nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 700V; 20A; Idm: 69A; 90W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 20A
Pulsed drain current: 69A
Power dissipation: 90W
Case: TO247-3
On-state resistance: 108mΩ
Mounting: THT
Gate charge: 38nC
Kind of channel: enhanced
auf Bestellung 35 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
8+ | 8.97 EUR |
9+ | 8.22 EUR |
MSC090SMA070B |
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Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 700V; 20A; Idm: 69A; 90W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 20A
Pulsed drain current: 69A
Power dissipation: 90W
Case: TO247-3
On-state resistance: 108mΩ
Mounting: THT
Gate charge: 38nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 700V; 20A; Idm: 69A; 90W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 20A
Pulsed drain current: 69A
Power dissipation: 90W
Case: TO247-3
On-state resistance: 108mΩ
Mounting: THT
Gate charge: 38nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 35 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
8+ | 8.97 EUR |
9+ | 8.22 EUR |
MSC090SMA070S |
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Hersteller: MICROCHIP (MICROSEMI)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 700V; 18A; Idm: 65A; 91W; D3PAK
Polarisation: unipolar
Drain-source voltage: 700V
Power dissipation: 91W
Case: D3PAK
Mounting: SMD
Gate charge: 38nC
Technology: SiC
Kind of channel: enhanced
Drain current: 18A
Pulsed drain current: 65A
On-state resistance: 0.115Ω
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 700V; 18A; Idm: 65A; 91W; D3PAK
Polarisation: unipolar
Drain-source voltage: 700V
Power dissipation: 91W
Case: D3PAK
Mounting: SMD
Gate charge: 38nC
Technology: SiC
Kind of channel: enhanced
Drain current: 18A
Pulsed drain current: 65A
On-state resistance: 0.115Ω
Type of transistor: N-MOSFET
auf Bestellung 60 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
7+ | 10.52 EUR |
8+ | 9.35 EUR |
25+ | 8.94 EUR |
MSC090SMA070S |
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Hersteller: MICROCHIP (MICROSEMI)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 700V; 18A; Idm: 65A; 91W; D3PAK
Polarisation: unipolar
Drain-source voltage: 700V
Power dissipation: 91W
Case: D3PAK
Mounting: SMD
Gate charge: 38nC
Technology: SiC
Kind of channel: enhanced
Drain current: 18A
Pulsed drain current: 65A
On-state resistance: 0.115Ω
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 700V; 18A; Idm: 65A; 91W; D3PAK
Polarisation: unipolar
Drain-source voltage: 700V
Power dissipation: 91W
Case: D3PAK
Mounting: SMD
Gate charge: 38nC
Technology: SiC
Kind of channel: enhanced
Drain current: 18A
Pulsed drain current: 65A
On-state resistance: 0.115Ω
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
auf Bestellung 60 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
7+ | 10.52 EUR |
8+ | 9.35 EUR |
25+ | 8.94 EUR |
MSC100SM70JCU2 |
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Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 700V; 98A; SOT227B; screw; Idm: 250A
Technology: SiC
Drain-source voltage: 700V
Drain current: 98A
Pulsed drain current: 250A
Power dissipation: 365W
Case: SOT227B
On-state resistance: 19mΩ
Semiconductor structure: SiC diode/transistor
Electrical mounting: screw
Topology: boost chopper
Mechanical mounting: screw
Type of module: MOSFET transistor
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 700V; 98A; SOT227B; screw; Idm: 250A
Technology: SiC
Drain-source voltage: 700V
Drain current: 98A
Pulsed drain current: 250A
Power dissipation: 365W
Case: SOT227B
On-state resistance: 19mΩ
Semiconductor structure: SiC diode/transistor
Electrical mounting: screw
Topology: boost chopper
Mechanical mounting: screw
Type of module: MOSFET transistor
Produkt ist nicht verfügbar
MSC100SM70JCU2 |
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Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 700V; 98A; SOT227B; screw; Idm: 250A
Technology: SiC
Drain-source voltage: 700V
Drain current: 98A
Pulsed drain current: 250A
Power dissipation: 365W
Case: SOT227B
On-state resistance: 19mΩ
Semiconductor structure: SiC diode/transistor
Electrical mounting: screw
Topology: boost chopper
Mechanical mounting: screw
Type of module: MOSFET transistor
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 700V; 98A; SOT227B; screw; Idm: 250A
Technology: SiC
Drain-source voltage: 700V
Drain current: 98A
Pulsed drain current: 250A
Power dissipation: 365W
Case: SOT227B
On-state resistance: 19mΩ
Semiconductor structure: SiC diode/transistor
Electrical mounting: screw
Topology: boost chopper
Mechanical mounting: screw
Type of module: MOSFET transistor
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
MSC100SM70JCU3 |
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Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 700V; 98A; SOT227B; screw; Idm: 250A
Technology: SiC
Drain-source voltage: 700V
Drain current: 98A
Pulsed drain current: 250A
Power dissipation: 365W
Case: SOT227B
On-state resistance: 19mΩ
Semiconductor structure: SiC diode/transistor
Electrical mounting: screw
Topology: buck chopper
Mechanical mounting: screw
Type of module: MOSFET transistor
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 700V; 98A; SOT227B; screw; Idm: 250A
Technology: SiC
Drain-source voltage: 700V
Drain current: 98A
Pulsed drain current: 250A
Power dissipation: 365W
Case: SOT227B
On-state resistance: 19mΩ
Semiconductor structure: SiC diode/transistor
Electrical mounting: screw
Topology: buck chopper
Mechanical mounting: screw
Type of module: MOSFET transistor
Produkt ist nicht verfügbar
MSC100SM70JCU3 |
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Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 700V; 98A; SOT227B; screw; Idm: 250A
Technology: SiC
Drain-source voltage: 700V
Drain current: 98A
Pulsed drain current: 250A
Power dissipation: 365W
Case: SOT227B
On-state resistance: 19mΩ
Semiconductor structure: SiC diode/transistor
Electrical mounting: screw
Topology: buck chopper
Mechanical mounting: screw
Type of module: MOSFET transistor
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 700V; 98A; SOT227B; screw; Idm: 250A
Technology: SiC
Drain-source voltage: 700V
Drain current: 98A
Pulsed drain current: 250A
Power dissipation: 365W
Case: SOT227B
On-state resistance: 19mΩ
Semiconductor structure: SiC diode/transistor
Electrical mounting: screw
Topology: buck chopper
Mechanical mounting: screw
Type of module: MOSFET transistor
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
MSC130SM120JCU2 |
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Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 138A; SOT227B; screw; 745W
Type of module: MOSFET transistor
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 138A
Case: SOT227B
Topology: boost chopper
Electrical mounting: screw
On-state resistance: 16mΩ
Pulsed drain current: 350A
Power dissipation: 745W
Technology: SiC
Mechanical mounting: screw
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 138A; SOT227B; screw; 745W
Type of module: MOSFET transistor
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 138A
Case: SOT227B
Topology: boost chopper
Electrical mounting: screw
On-state resistance: 16mΩ
Pulsed drain current: 350A
Power dissipation: 745W
Technology: SiC
Mechanical mounting: screw
Produkt ist nicht verfügbar
MSC130SM120JCU2 |
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Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 138A; SOT227B; screw; 745W
Type of module: MOSFET transistor
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 138A
Case: SOT227B
Topology: boost chopper
Electrical mounting: screw
On-state resistance: 16mΩ
Pulsed drain current: 350A
Power dissipation: 745W
Technology: SiC
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 138A; SOT227B; screw; 745W
Type of module: MOSFET transistor
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 138A
Case: SOT227B
Topology: boost chopper
Electrical mounting: screw
On-state resistance: 16mΩ
Pulsed drain current: 350A
Power dissipation: 745W
Technology: SiC
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
MSC130SM120JCU3 |
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Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 138A; SOT227B; screw; 745W
Type of module: MOSFET transistor
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 138A
Case: SOT227B
Topology: buck chopper
Electrical mounting: screw
On-state resistance: 16mΩ
Pulsed drain current: 350A
Power dissipation: 745W
Technology: SiC
Mechanical mounting: screw
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 138A; SOT227B; screw; 745W
Type of module: MOSFET transistor
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 138A
Case: SOT227B
Topology: buck chopper
Electrical mounting: screw
On-state resistance: 16mΩ
Pulsed drain current: 350A
Power dissipation: 745W
Technology: SiC
Mechanical mounting: screw
Produkt ist nicht verfügbar
MSC130SM120JCU3 |
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Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 138A; SOT227B; screw; 745W
Type of module: MOSFET transistor
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 138A
Case: SOT227B
Topology: buck chopper
Electrical mounting: screw
On-state resistance: 16mΩ
Pulsed drain current: 350A
Power dissipation: 745W
Technology: SiC
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 138A; SOT227B; screw; 745W
Type of module: MOSFET transistor
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 138A
Case: SOT227B
Topology: buck chopper
Electrical mounting: screw
On-state resistance: 16mΩ
Pulsed drain current: 350A
Power dissipation: 745W
Technology: SiC
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
MSC180SMA120B |
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Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 15A; Idm: 40A; 127W
Polarisation: unipolar
Drain-source voltage: 1.2kV
Power dissipation: 127W
Case: TO247-3
Mounting: THT
Gate charge: 34nC
Technology: SiC
Kind of channel: enhanced
Drain current: 15A
Pulsed drain current: 40A
On-state resistance: 0.225Ω
Type of transistor: N-MOSFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 15A; Idm: 40A; 127W
Polarisation: unipolar
Drain-source voltage: 1.2kV
Power dissipation: 127W
Case: TO247-3
Mounting: THT
Gate charge: 34nC
Technology: SiC
Kind of channel: enhanced
Drain current: 15A
Pulsed drain current: 40A
On-state resistance: 0.225Ω
Type of transistor: N-MOSFET
auf Bestellung 40 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
5+ | 14.6 EUR |
8+ | 9.52 EUR |
MSC180SMA120B |
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Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 15A; Idm: 40A; 127W
Polarisation: unipolar
Drain-source voltage: 1.2kV
Power dissipation: 127W
Case: TO247-3
Mounting: THT
Gate charge: 34nC
Technology: SiC
Kind of channel: enhanced
Drain current: 15A
Pulsed drain current: 40A
On-state resistance: 0.225Ω
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 15A; Idm: 40A; 127W
Polarisation: unipolar
Drain-source voltage: 1.2kV
Power dissipation: 127W
Case: TO247-3
Mounting: THT
Gate charge: 34nC
Technology: SiC
Kind of channel: enhanced
Drain current: 15A
Pulsed drain current: 40A
On-state resistance: 0.225Ω
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
auf Bestellung 40 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
5+ | 14.6 EUR |
8+ | 9.52 EUR |
MSC180SMA120S |
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Hersteller: MICROCHIP (MICROSEMI)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 15A; Idm: 40A; 125W
Polarisation: unipolar
Drain-source voltage: 1.2kV
Power dissipation: 125W
Case: D3PAK
Mounting: SMD
Gate charge: 34nC
Technology: SiC
Kind of channel: enhanced
Drain current: 15A
Pulsed drain current: 40A
On-state resistance: 0.225Ω
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 15A; Idm: 40A; 125W
Polarisation: unipolar
Drain-source voltage: 1.2kV
Power dissipation: 125W
Case: D3PAK
Mounting: SMD
Gate charge: 34nC
Technology: SiC
Kind of channel: enhanced
Drain current: 15A
Pulsed drain current: 40A
On-state resistance: 0.225Ω
Type of transistor: N-MOSFET
auf Bestellung 50 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
5+ | 16.1 EUR |
7+ | 10.54 EUR |
MSC180SMA120S |
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Hersteller: MICROCHIP (MICROSEMI)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 15A; Idm: 40A; 125W
Polarisation: unipolar
Drain-source voltage: 1.2kV
Power dissipation: 125W
Case: D3PAK
Mounting: SMD
Gate charge: 34nC
Technology: SiC
Kind of channel: enhanced
Drain current: 15A
Pulsed drain current: 40A
On-state resistance: 0.225Ω
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 15A; Idm: 40A; 125W
Polarisation: unipolar
Drain-source voltage: 1.2kV
Power dissipation: 125W
Case: D3PAK
Mounting: SMD
Gate charge: 34nC
Technology: SiC
Kind of channel: enhanced
Drain current: 15A
Pulsed drain current: 40A
On-state resistance: 0.225Ω
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
auf Bestellung 50 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
5+ | 16.1 EUR |
7+ | 10.54 EUR |
MSC2X100SDA070J |
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Hersteller: MICROCHIP (MICROSEMI)
MSC2X100SDA070J Diode modules
MSC2X100SDA070J Diode modules
Produkt ist nicht verfügbar
MSC2X100SDA120J |
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Hersteller: MICROCHIP (MICROSEMI)
MSC2X100SDA120J Diode modules
MSC2X100SDA120J Diode modules
Produkt ist nicht verfügbar
MSC2X101SDA070J |
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Hersteller: MICROCHIP (MICROSEMI)
MSC2X101SDA070J Diode modules
MSC2X101SDA070J Diode modules
Produkt ist nicht verfügbar
MSC2X101SDA120J |
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Hersteller: MICROCHIP (MICROSEMI)
MSC2X101SDA120J Diode modules
MSC2X101SDA120J Diode modules
Produkt ist nicht verfügbar
MSC2X30SDA070J |
Hersteller: MICROCHIP (MICROSEMI)
MSC2X30SDA070J Diode modules
MSC2X30SDA070J Diode modules
Produkt ist nicht verfügbar
MSC2X30SDA120J |
Hersteller: MICROCHIP (MICROSEMI)
MSC2X30SDA120J Diode modules
MSC2X30SDA120J Diode modules
Produkt ist nicht verfügbar
MSC2X30SDA170J |
Hersteller: MICROCHIP (MICROSEMI)
MSC2X30SDA170J Diode modules
MSC2X30SDA170J Diode modules
Produkt ist nicht verfügbar
MSC2X31SDA070J |
Hersteller: MICROCHIP (MICROSEMI)
MSC2X31SDA070J Diode modules
MSC2X31SDA070J Diode modules
Produkt ist nicht verfügbar
MSC2X31SDA120J |
Hersteller: MICROCHIP (MICROSEMI)
MSC2X31SDA120J Diode modules
MSC2X31SDA120J Diode modules
Produkt ist nicht verfügbar
MSC2X31SDA170J |
Hersteller: MICROCHIP (MICROSEMI)
MSC2X31SDA170J Diode modules
MSC2X31SDA170J Diode modules
Produkt ist nicht verfügbar
MSC2X50SDA070J |
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Hersteller: MICROCHIP (MICROSEMI)
MSC2X50SDA070J Diode modules
MSC2X50SDA070J Diode modules
Produkt ist nicht verfügbar
MSC2X50SDA120J |
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Hersteller: MICROCHIP (MICROSEMI)
MSC2X50SDA120J Diode modules
MSC2X50SDA120J Diode modules
Produkt ist nicht verfügbar
MSC2X50SDA170J |
Hersteller: MICROCHIP (MICROSEMI)
MSC2X50SDA170J Diode modules
MSC2X50SDA170J Diode modules
Produkt ist nicht verfügbar
MSC2X51SDA070J |
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Hersteller: MICROCHIP (MICROSEMI)
MSC2X51SDA070J Diode modules
MSC2X51SDA070J Diode modules
Produkt ist nicht verfügbar
MSC2X51SDA120J |
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Hersteller: MICROCHIP (MICROSEMI)
MSC2X51SDA120J Diode modules
MSC2X51SDA120J Diode modules
Produkt ist nicht verfügbar
MSC2X51SDA170J |
Hersteller: MICROCHIP (MICROSEMI)
MSC2X51SDA170J Diode modules
MSC2X51SDA170J Diode modules
Produkt ist nicht verfügbar
MSC360SMA120B |
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Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 8A; Idm: 28A; 78W
Polarisation: unipolar
Drain-source voltage: 1.2kV
Power dissipation: 78W
Case: TO247-3
Mounting: THT
Gate charge: 21nC
Technology: SiC
Kind of channel: enhanced
Drain current: 8A
Pulsed drain current: 28A
On-state resistance: 0.45Ω
Type of transistor: N-MOSFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 8A; Idm: 28A; 78W
Polarisation: unipolar
Drain-source voltage: 1.2kV
Power dissipation: 78W
Case: TO247-3
Mounting: THT
Gate charge: 21nC
Technology: SiC
Kind of channel: enhanced
Drain current: 8A
Pulsed drain current: 28A
On-state resistance: 0.45Ω
Type of transistor: N-MOSFET
auf Bestellung 60 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
7+ | 10.5 EUR |
10+ | 7.28 EUR |
MSC360SMA120B |
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Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 8A; Idm: 28A; 78W
Polarisation: unipolar
Drain-source voltage: 1.2kV
Power dissipation: 78W
Case: TO247-3
Mounting: THT
Gate charge: 21nC
Technology: SiC
Kind of channel: enhanced
Drain current: 8A
Pulsed drain current: 28A
On-state resistance: 0.45Ω
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 8A; Idm: 28A; 78W
Polarisation: unipolar
Drain-source voltage: 1.2kV
Power dissipation: 78W
Case: TO247-3
Mounting: THT
Gate charge: 21nC
Technology: SiC
Kind of channel: enhanced
Drain current: 8A
Pulsed drain current: 28A
On-state resistance: 0.45Ω
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
auf Bestellung 60 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
7+ | 10.5 EUR |
10+ | 7.28 EUR |
MSC360SMA120S |
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Hersteller: MICROCHIP (MICROSEMI)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 8A; Idm: 27A; 71W; D3PAK
Polarisation: unipolar
Drain-source voltage: 1.2kV
Power dissipation: 71W
Case: D3PAK
Mounting: SMD
Gate charge: 21nC
Technology: SiC
Kind of channel: enhanced
Drain current: 8A
Pulsed drain current: 27A
On-state resistance: 0.45Ω
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 8A; Idm: 27A; 71W; D3PAK
Polarisation: unipolar
Drain-source voltage: 1.2kV
Power dissipation: 71W
Case: D3PAK
Mounting: SMD
Gate charge: 21nC
Technology: SiC
Kind of channel: enhanced
Drain current: 8A
Pulsed drain current: 27A
On-state resistance: 0.45Ω
Type of transistor: N-MOSFET
auf Bestellung 67 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
8+ | 9.28 EUR |
10+ | 9.09 EUR |
25+ | 8.88 EUR |
MSC360SMA120S |
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Hersteller: MICROCHIP (MICROSEMI)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 8A; Idm: 27A; 71W; D3PAK
Polarisation: unipolar
Drain-source voltage: 1.2kV
Power dissipation: 71W
Case: D3PAK
Mounting: SMD
Gate charge: 21nC
Technology: SiC
Kind of channel: enhanced
Drain current: 8A
Pulsed drain current: 27A
On-state resistance: 0.45Ω
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 8A; Idm: 27A; 71W; D3PAK
Polarisation: unipolar
Drain-source voltage: 1.2kV
Power dissipation: 71W
Case: D3PAK
Mounting: SMD
Gate charge: 21nC
Technology: SiC
Kind of channel: enhanced
Drain current: 8A
Pulsed drain current: 27A
On-state resistance: 0.45Ω
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
auf Bestellung 67 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
8+ | 9.28 EUR |
10+ | 9.09 EUR |
25+ | 8.88 EUR |
MSC400SMA330B4 |
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Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 3.3kV; 7A; Idm: 27A; 131W
Case: TO247-4
Drain-source voltage: 3.3kV
Drain current: 7A
On-state resistance: 0.52Ω
Type of transistor: N-MOSFET
Power dissipation: 131W
Polarisation: unipolar
Features of semiconductor devices: Kelvin terminal
Gate charge: 37nC
Technology: SiC
Kind of channel: enhanced
Pulsed drain current: 27A
Mounting: THT
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 3.3kV; 7A; Idm: 27A; 131W
Case: TO247-4
Drain-source voltage: 3.3kV
Drain current: 7A
On-state resistance: 0.52Ω
Type of transistor: N-MOSFET
Power dissipation: 131W
Polarisation: unipolar
Features of semiconductor devices: Kelvin terminal
Gate charge: 37nC
Technology: SiC
Kind of channel: enhanced
Pulsed drain current: 27A
Mounting: THT
Produkt ist nicht verfügbar
MSC400SMA330B4 |
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Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 3.3kV; 7A; Idm: 27A; 131W
Case: TO247-4
Drain-source voltage: 3.3kV
Drain current: 7A
On-state resistance: 0.52Ω
Type of transistor: N-MOSFET
Power dissipation: 131W
Polarisation: unipolar
Features of semiconductor devices: Kelvin terminal
Gate charge: 37nC
Technology: SiC
Kind of channel: enhanced
Pulsed drain current: 27A
Mounting: THT
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 3.3kV; 7A; Idm: 27A; 131W
Case: TO247-4
Drain-source voltage: 3.3kV
Drain current: 7A
On-state resistance: 0.52Ω
Type of transistor: N-MOSFET
Power dissipation: 131W
Polarisation: unipolar
Features of semiconductor devices: Kelvin terminal
Gate charge: 37nC
Technology: SiC
Kind of channel: enhanced
Pulsed drain current: 27A
Mounting: THT
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
MSC40SM120JCU2 |
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Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 44A; SOT227B; screw; Idm: 110A
Case: SOT227B
Semiconductor structure: SiC diode/transistor
Electrical mounting: screw
Mechanical mounting: screw
Topology: boost chopper
Technology: SiC
Power dissipation: 245W
Pulsed drain current: 110A
Type of module: MOSFET transistor
Drain-source voltage: 1.2kV
Drain current: 44A
On-state resistance: 50mΩ
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 44A; SOT227B; screw; Idm: 110A
Case: SOT227B
Semiconductor structure: SiC diode/transistor
Electrical mounting: screw
Mechanical mounting: screw
Topology: boost chopper
Technology: SiC
Power dissipation: 245W
Pulsed drain current: 110A
Type of module: MOSFET transistor
Drain-source voltage: 1.2kV
Drain current: 44A
On-state resistance: 50mΩ
Produkt ist nicht verfügbar
MSC40SM120JCU2 |
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Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 44A; SOT227B; screw; Idm: 110A
Case: SOT227B
Semiconductor structure: SiC diode/transistor
Electrical mounting: screw
Mechanical mounting: screw
Topology: boost chopper
Technology: SiC
Power dissipation: 245W
Pulsed drain current: 110A
Type of module: MOSFET transistor
Drain-source voltage: 1.2kV
Drain current: 44A
On-state resistance: 50mΩ
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 44A; SOT227B; screw; Idm: 110A
Case: SOT227B
Semiconductor structure: SiC diode/transistor
Electrical mounting: screw
Mechanical mounting: screw
Topology: boost chopper
Technology: SiC
Power dissipation: 245W
Pulsed drain current: 110A
Type of module: MOSFET transistor
Drain-source voltage: 1.2kV
Drain current: 44A
On-state resistance: 50mΩ
Produkt ist nicht verfügbar
MSC40SM120JCU3 |
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Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 44A; SOT227B; screw; Idm: 110A
Case: SOT227B
Semiconductor structure: SiC diode/transistor
Electrical mounting: screw
Mechanical mounting: screw
Topology: buck chopper
Technology: SiC
Power dissipation: 245W
Pulsed drain current: 110A
Type of module: MOSFET transistor
Drain-source voltage: 1.2kV
Drain current: 44A
On-state resistance: 50mΩ
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 44A; SOT227B; screw; Idm: 110A
Case: SOT227B
Semiconductor structure: SiC diode/transistor
Electrical mounting: screw
Mechanical mounting: screw
Topology: buck chopper
Technology: SiC
Power dissipation: 245W
Pulsed drain current: 110A
Type of module: MOSFET transistor
Drain-source voltage: 1.2kV
Drain current: 44A
On-state resistance: 50mΩ
Produkt ist nicht verfügbar
MSC40SM120JCU3 |
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Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 44A; SOT227B; screw; Idm: 110A
Case: SOT227B
Semiconductor structure: SiC diode/transistor
Electrical mounting: screw
Mechanical mounting: screw
Topology: buck chopper
Technology: SiC
Power dissipation: 245W
Pulsed drain current: 110A
Type of module: MOSFET transistor
Drain-source voltage: 1.2kV
Drain current: 44A
On-state resistance: 50mΩ
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 44A; SOT227B; screw; Idm: 110A
Case: SOT227B
Semiconductor structure: SiC diode/transistor
Electrical mounting: screw
Mechanical mounting: screw
Topology: buck chopper
Technology: SiC
Power dissipation: 245W
Pulsed drain current: 110A
Type of module: MOSFET transistor
Drain-source voltage: 1.2kV
Drain current: 44A
On-state resistance: 50mΩ
Produkt ist nicht verfügbar
MSC50DC120HJ |
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Hersteller: MICROCHIP (MICROSEMI)
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 50A; screw; screw
Version: module
Technology: SiC
Features of semiconductor devices: Schottky
Mechanical mounting: screw
Leads: M4 screws
Max. off-state voltage: 1.2kV
Electrical mounting: screw
Load current: 50A
Kind of package: tube
Case: SOT227B
Type of bridge rectifier: single-phase
Max. forward voltage: 2.1V
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 50A; screw; screw
Version: module
Technology: SiC
Features of semiconductor devices: Schottky
Mechanical mounting: screw
Leads: M4 screws
Max. off-state voltage: 1.2kV
Electrical mounting: screw
Load current: 50A
Kind of package: tube
Case: SOT227B
Type of bridge rectifier: single-phase
Max. forward voltage: 2.1V
Produkt ist nicht verfügbar
MSC50DC120HJ |
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Hersteller: MICROCHIP (MICROSEMI)
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 50A; screw; screw
Version: module
Technology: SiC
Features of semiconductor devices: Schottky
Mechanical mounting: screw
Leads: M4 screws
Max. off-state voltage: 1.2kV
Electrical mounting: screw
Load current: 50A
Kind of package: tube
Case: SOT227B
Type of bridge rectifier: single-phase
Max. forward voltage: 2.1V
Anzahl je Verpackung: 1 Stücke
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 50A; screw; screw
Version: module
Technology: SiC
Features of semiconductor devices: Schottky
Mechanical mounting: screw
Leads: M4 screws
Max. off-state voltage: 1.2kV
Electrical mounting: screw
Load current: 50A
Kind of package: tube
Case: SOT227B
Type of bridge rectifier: single-phase
Max. forward voltage: 2.1V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
MSC50DC170HJ |
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Hersteller: MICROCHIP (MICROSEMI)
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 1.7kV; If: 50A; screw; screw
Version: module
Technology: SiC
Features of semiconductor devices: Schottky
Mechanical mounting: screw
Leads: M4 screws
Max. off-state voltage: 1.7kV
Electrical mounting: screw
Load current: 50A
Kind of package: tube
Case: SOT227B
Type of bridge rectifier: single-phase
Max. forward voltage: 2V
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 1.7kV; If: 50A; screw; screw
Version: module
Technology: SiC
Features of semiconductor devices: Schottky
Mechanical mounting: screw
Leads: M4 screws
Max. off-state voltage: 1.7kV
Electrical mounting: screw
Load current: 50A
Kind of package: tube
Case: SOT227B
Type of bridge rectifier: single-phase
Max. forward voltage: 2V
Produkt ist nicht verfügbar
MSC50DC170HJ |
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Hersteller: MICROCHIP (MICROSEMI)
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 1.7kV; If: 50A; screw; screw
Version: module
Technology: SiC
Features of semiconductor devices: Schottky
Mechanical mounting: screw
Leads: M4 screws
Max. off-state voltage: 1.7kV
Electrical mounting: screw
Load current: 50A
Kind of package: tube
Case: SOT227B
Type of bridge rectifier: single-phase
Max. forward voltage: 2V
Anzahl je Verpackung: 1 Stücke
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 1.7kV; If: 50A; screw; screw
Version: module
Technology: SiC
Features of semiconductor devices: Schottky
Mechanical mounting: screw
Leads: M4 screws
Max. off-state voltage: 1.7kV
Electrical mounting: screw
Load current: 50A
Kind of package: tube
Case: SOT227B
Type of bridge rectifier: single-phase
Max. forward voltage: 2V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
MSC50DC70HJ |
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Hersteller: MICROCHIP (MICROSEMI)
MSC50DC70HJ Sing. ph. diode bridge rectif. - others
MSC50DC70HJ Sing. ph. diode bridge rectif. - others
Produkt ist nicht verfügbar
MSC70SM120JCU2 |
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Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 71A; SOT227B; screw; Idm: 180A
Type of module: MOSFET transistor
Technology: SiC
Topology: boost chopper
Pulsed drain current: 180A
Case: SOT227B
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 71A
On-state resistance: 31mΩ
Power dissipation: 395W
Electrical mounting: screw
Mechanical mounting: screw
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 71A; SOT227B; screw; Idm: 180A
Type of module: MOSFET transistor
Technology: SiC
Topology: boost chopper
Pulsed drain current: 180A
Case: SOT227B
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 71A
On-state resistance: 31mΩ
Power dissipation: 395W
Electrical mounting: screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
MSC70SM120JCU2 |
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Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 71A; SOT227B; screw; Idm: 180A
Type of module: MOSFET transistor
Technology: SiC
Topology: boost chopper
Pulsed drain current: 180A
Case: SOT227B
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 71A
On-state resistance: 31mΩ
Power dissipation: 395W
Electrical mounting: screw
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 71A; SOT227B; screw; Idm: 180A
Type of module: MOSFET transistor
Technology: SiC
Topology: boost chopper
Pulsed drain current: 180A
Case: SOT227B
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 71A
On-state resistance: 31mΩ
Power dissipation: 395W
Electrical mounting: screw
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
MSC70SM120JCU3 |
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Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 71A; SOT227B; screw; Idm: 180A
Type of module: MOSFET transistor
Technology: SiC
Topology: buck chopper
Pulsed drain current: 180A
Case: SOT227B
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 71A
On-state resistance: 31mΩ
Power dissipation: 395W
Electrical mounting: screw
Mechanical mounting: screw
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 71A; SOT227B; screw; Idm: 180A
Type of module: MOSFET transistor
Technology: SiC
Topology: buck chopper
Pulsed drain current: 180A
Case: SOT227B
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 71A
On-state resistance: 31mΩ
Power dissipation: 395W
Electrical mounting: screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
MSC70SM120JCU3 |
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Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 71A; SOT227B; screw; Idm: 180A
Type of module: MOSFET transistor
Technology: SiC
Topology: buck chopper
Pulsed drain current: 180A
Case: SOT227B
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 71A
On-state resistance: 31mΩ
Power dissipation: 395W
Electrical mounting: screw
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 71A; SOT227B; screw; Idm: 180A
Type of module: MOSFET transistor
Technology: SiC
Topology: buck chopper
Pulsed drain current: 180A
Case: SOT227B
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 71A
On-state resistance: 31mΩ
Power dissipation: 395W
Electrical mounting: screw
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
MSC750SMA170B |
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Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 5A; Idm: 12A; 68W
Polarisation: unipolar
Drain-source voltage: 1.7kV
Power dissipation: 68W
Case: TO247-3
Mounting: THT
Gate charge: 18nC
Technology: SiC
Kind of channel: enhanced
Drain current: 5A
Pulsed drain current: 12A
On-state resistance: 940mΩ
Type of transistor: N-MOSFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 5A; Idm: 12A; 68W
Polarisation: unipolar
Drain-source voltage: 1.7kV
Power dissipation: 68W
Case: TO247-3
Mounting: THT
Gate charge: 18nC
Technology: SiC
Kind of channel: enhanced
Drain current: 5A
Pulsed drain current: 12A
On-state resistance: 940mΩ
Type of transistor: N-MOSFET
auf Bestellung 37 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
11+ | 6.84 EUR |
12+ | 6.29 EUR |
13+ | 5.95 EUR |
MSC750SMA170B |
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Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 5A; Idm: 12A; 68W
Polarisation: unipolar
Drain-source voltage: 1.7kV
Power dissipation: 68W
Case: TO247-3
Mounting: THT
Gate charge: 18nC
Technology: SiC
Kind of channel: enhanced
Drain current: 5A
Pulsed drain current: 12A
On-state resistance: 940mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 5A; Idm: 12A; 68W
Polarisation: unipolar
Drain-source voltage: 1.7kV
Power dissipation: 68W
Case: TO247-3
Mounting: THT
Gate charge: 18nC
Technology: SiC
Kind of channel: enhanced
Drain current: 5A
Pulsed drain current: 12A
On-state resistance: 940mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
auf Bestellung 37 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
11+ | 6.84 EUR |
12+ | 6.29 EUR |
13+ | 5.95 EUR |
90+ | 5.69 EUR |
MSC750SMA170B4 |
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Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 5A; Idm: 12A; 68W
Case: TO247-4
Mounting: THT
Drain-source voltage: 1.7kV
Drain current: 5A
On-state resistance: 940mΩ
Type of transistor: N-MOSFET
Power dissipation: 68W
Polarisation: unipolar
Features of semiconductor devices: Kelvin terminal
Gate charge: 11nC
Technology: SiC
Kind of channel: enhanced
Pulsed drain current: 12A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 5A; Idm: 12A; 68W
Case: TO247-4
Mounting: THT
Drain-source voltage: 1.7kV
Drain current: 5A
On-state resistance: 940mΩ
Type of transistor: N-MOSFET
Power dissipation: 68W
Polarisation: unipolar
Features of semiconductor devices: Kelvin terminal
Gate charge: 11nC
Technology: SiC
Kind of channel: enhanced
Pulsed drain current: 12A
Produkt ist nicht verfügbar
MSC750SMA170B4 |
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Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 5A; Idm: 12A; 68W
Case: TO247-4
Mounting: THT
Drain-source voltage: 1.7kV
Drain current: 5A
On-state resistance: 940mΩ
Type of transistor: N-MOSFET
Power dissipation: 68W
Polarisation: unipolar
Features of semiconductor devices: Kelvin terminal
Gate charge: 11nC
Technology: SiC
Kind of channel: enhanced
Pulsed drain current: 12A
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 5A; Idm: 12A; 68W
Case: TO247-4
Mounting: THT
Drain-source voltage: 1.7kV
Drain current: 5A
On-state resistance: 940mΩ
Type of transistor: N-MOSFET
Power dissipation: 68W
Polarisation: unipolar
Features of semiconductor devices: Kelvin terminal
Gate charge: 11nC
Technology: SiC
Kind of channel: enhanced
Pulsed drain current: 12A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
MSC750SMA170S |
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Hersteller: MICROCHIP (MICROSEMI)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 4A; Idm: 12A; 63W; D3PAK
Case: D3PAK
Mounting: SMD
Drain-source voltage: 1.7kV
Drain current: 4A
On-state resistance: 940mΩ
Type of transistor: N-MOSFET
Power dissipation: 63W
Polarisation: unipolar
Gate charge: 18nC
Technology: SiC
Kind of channel: enhanced
Pulsed drain current: 12A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 4A; Idm: 12A; 63W; D3PAK
Case: D3PAK
Mounting: SMD
Drain-source voltage: 1.7kV
Drain current: 4A
On-state resistance: 940mΩ
Type of transistor: N-MOSFET
Power dissipation: 63W
Polarisation: unipolar
Gate charge: 18nC
Technology: SiC
Kind of channel: enhanced
Pulsed drain current: 12A
Produkt ist nicht verfügbar
MSC750SMA170S |
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Hersteller: MICROCHIP (MICROSEMI)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 4A; Idm: 12A; 63W; D3PAK
Case: D3PAK
Mounting: SMD
Drain-source voltage: 1.7kV
Drain current: 4A
On-state resistance: 940mΩ
Type of transistor: N-MOSFET
Power dissipation: 63W
Polarisation: unipolar
Gate charge: 18nC
Technology: SiC
Kind of channel: enhanced
Pulsed drain current: 12A
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 4A; Idm: 12A; 63W; D3PAK
Case: D3PAK
Mounting: SMD
Drain-source voltage: 1.7kV
Drain current: 4A
On-state resistance: 940mΩ
Type of transistor: N-MOSFET
Power dissipation: 63W
Polarisation: unipolar
Gate charge: 18nC
Technology: SiC
Kind of channel: enhanced
Pulsed drain current: 12A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar