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MSC080SMA330B4 MICROCHIP (MICROSEMI) MSC080SMA330B4.PDF Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 3.3kV; 26A; Idm: 100A; 381W
Technology: SiC
Mounting: THT
Features of semiconductor devices: Kelvin terminal
Case: TO247-4
Power dissipation: 381W
Gate charge: 55nC
Kind of channel: enhanced
Pulsed drain current: 100A
Drain-source voltage: 3.3kV
Drain current: 26A
On-state resistance: 0.105Ω
Type of transistor: N-MOSFET
Polarisation: unipolar
Produkt ist nicht verfügbar
MSC080SMA330B4 MICROCHIP (MICROSEMI) MSC080SMA330B4.PDF Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 3.3kV; 26A; Idm: 100A; 381W
Technology: SiC
Mounting: THT
Features of semiconductor devices: Kelvin terminal
Case: TO247-4
Power dissipation: 381W
Gate charge: 55nC
Kind of channel: enhanced
Pulsed drain current: 100A
Drain-source voltage: 3.3kV
Drain current: 26A
On-state resistance: 0.105Ω
Type of transistor: N-MOSFET
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
MSC090SDA330B2 MICROCHIP (MICROSEMI) MSC090SDA330B2 THT Schottky diodes
Produkt ist nicht verfügbar
MSC090SMA070B MSC090SMA070B MICROCHIP (MICROSEMI) 1244458-msc090sma070b-datasheet Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 700V; 20A; Idm: 69A; 90W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 20A
Pulsed drain current: 69A
Power dissipation: 90W
Case: TO247-3
On-state resistance: 108mΩ
Mounting: THT
Gate charge: 38nC
Kind of channel: enhanced
auf Bestellung 35 Stücke:
Lieferzeit 14-21 Tag (e)
8+8.97 EUR
9+ 8.22 EUR
Mindestbestellmenge: 8
MSC090SMA070B MSC090SMA070B MICROCHIP (MICROSEMI) 1244458-msc090sma070b-datasheet Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 700V; 20A; Idm: 69A; 90W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 20A
Pulsed drain current: 69A
Power dissipation: 90W
Case: TO247-3
On-state resistance: 108mΩ
Mounting: THT
Gate charge: 38nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 35 Stücke:
Lieferzeit 7-14 Tag (e)
8+8.97 EUR
9+ 8.22 EUR
Mindestbestellmenge: 8
MSC090SMA070S MSC090SMA070S MICROCHIP (MICROSEMI) 1244481-msc090sma070s-datasheet Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 700V; 18A; Idm: 65A; 91W; D3PAK
Polarisation: unipolar
Drain-source voltage: 700V
Power dissipation: 91W
Case: D3PAK
Mounting: SMD
Gate charge: 38nC
Technology: SiC
Kind of channel: enhanced
Drain current: 18A
Pulsed drain current: 65A
On-state resistance: 0.115Ω
Type of transistor: N-MOSFET
auf Bestellung 60 Stücke:
Lieferzeit 14-21 Tag (e)
7+10.52 EUR
8+ 9.35 EUR
25+ 8.94 EUR
Mindestbestellmenge: 7
MSC090SMA070S MSC090SMA070S MICROCHIP (MICROSEMI) 1244481-msc090sma070s-datasheet Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 700V; 18A; Idm: 65A; 91W; D3PAK
Polarisation: unipolar
Drain-source voltage: 700V
Power dissipation: 91W
Case: D3PAK
Mounting: SMD
Gate charge: 38nC
Technology: SiC
Kind of channel: enhanced
Drain current: 18A
Pulsed drain current: 65A
On-state resistance: 0.115Ω
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
auf Bestellung 60 Stücke:
Lieferzeit 7-14 Tag (e)
7+10.52 EUR
8+ 9.35 EUR
25+ 8.94 EUR
Mindestbestellmenge: 7
MSC100SM70JCU2 MICROCHIP (MICROSEMI) 1244931-msc100sm70jcu2-datasheet Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 700V; 98A; SOT227B; screw; Idm: 250A
Technology: SiC
Drain-source voltage: 700V
Drain current: 98A
Pulsed drain current: 250A
Power dissipation: 365W
Case: SOT227B
On-state resistance: 19mΩ
Semiconductor structure: SiC diode/transistor
Electrical mounting: screw
Topology: boost chopper
Mechanical mounting: screw
Type of module: MOSFET transistor
Produkt ist nicht verfügbar
MSC100SM70JCU2 MICROCHIP (MICROSEMI) 1244931-msc100sm70jcu2-datasheet Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 700V; 98A; SOT227B; screw; Idm: 250A
Technology: SiC
Drain-source voltage: 700V
Drain current: 98A
Pulsed drain current: 250A
Power dissipation: 365W
Case: SOT227B
On-state resistance: 19mΩ
Semiconductor structure: SiC diode/transistor
Electrical mounting: screw
Topology: boost chopper
Mechanical mounting: screw
Type of module: MOSFET transistor
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
MSC100SM70JCU3 MICROCHIP (MICROSEMI) 1244932-msc100sm70jcu3-datasheet Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 700V; 98A; SOT227B; screw; Idm: 250A
Technology: SiC
Drain-source voltage: 700V
Drain current: 98A
Pulsed drain current: 250A
Power dissipation: 365W
Case: SOT227B
On-state resistance: 19mΩ
Semiconductor structure: SiC diode/transistor
Electrical mounting: screw
Topology: buck chopper
Mechanical mounting: screw
Type of module: MOSFET transistor
Produkt ist nicht verfügbar
MSC100SM70JCU3 MICROCHIP (MICROSEMI) 1244932-msc100sm70jcu3-datasheet Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 700V; 98A; SOT227B; screw; Idm: 250A
Technology: SiC
Drain-source voltage: 700V
Drain current: 98A
Pulsed drain current: 250A
Power dissipation: 365W
Case: SOT227B
On-state resistance: 19mΩ
Semiconductor structure: SiC diode/transistor
Electrical mounting: screw
Topology: buck chopper
Mechanical mounting: screw
Type of module: MOSFET transistor
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
MSC130SM120JCU2 MICROCHIP (MICROSEMI) 1244799-msc130sm120jcu2-datasheet Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 138A; SOT227B; screw; 745W
Type of module: MOSFET transistor
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 138A
Case: SOT227B
Topology: boost chopper
Electrical mounting: screw
On-state resistance: 16mΩ
Pulsed drain current: 350A
Power dissipation: 745W
Technology: SiC
Mechanical mounting: screw
Produkt ist nicht verfügbar
MSC130SM120JCU2 MICROCHIP (MICROSEMI) 1244799-msc130sm120jcu2-datasheet Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 138A; SOT227B; screw; 745W
Type of module: MOSFET transistor
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 138A
Case: SOT227B
Topology: boost chopper
Electrical mounting: screw
On-state resistance: 16mΩ
Pulsed drain current: 350A
Power dissipation: 745W
Technology: SiC
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
MSC130SM120JCU3 MICROCHIP (MICROSEMI) 1244800-msc130sm120jcu3-datasheet Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 138A; SOT227B; screw; 745W
Type of module: MOSFET transistor
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 138A
Case: SOT227B
Topology: buck chopper
Electrical mounting: screw
On-state resistance: 16mΩ
Pulsed drain current: 350A
Power dissipation: 745W
Technology: SiC
Mechanical mounting: screw
Produkt ist nicht verfügbar
MSC130SM120JCU3 MICROCHIP (MICROSEMI) 1244800-msc130sm120jcu3-datasheet Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 138A; SOT227B; screw; 745W
Type of module: MOSFET transistor
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 138A
Case: SOT227B
Topology: buck chopper
Electrical mounting: screw
On-state resistance: 16mΩ
Pulsed drain current: 350A
Power dissipation: 745W
Technology: SiC
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
MSC180SMA120B MSC180SMA120B MICROCHIP (MICROSEMI) MSC180SMA120B.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 15A; Idm: 40A; 127W
Polarisation: unipolar
Drain-source voltage: 1.2kV
Power dissipation: 127W
Case: TO247-3
Mounting: THT
Gate charge: 34nC
Technology: SiC
Kind of channel: enhanced
Drain current: 15A
Pulsed drain current: 40A
On-state resistance: 0.225Ω
Type of transistor: N-MOSFET
auf Bestellung 40 Stücke:
Lieferzeit 14-21 Tag (e)
5+14.6 EUR
8+ 9.52 EUR
Mindestbestellmenge: 5
MSC180SMA120B MSC180SMA120B MICROCHIP (MICROSEMI) MSC180SMA120B.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 15A; Idm: 40A; 127W
Polarisation: unipolar
Drain-source voltage: 1.2kV
Power dissipation: 127W
Case: TO247-3
Mounting: THT
Gate charge: 34nC
Technology: SiC
Kind of channel: enhanced
Drain current: 15A
Pulsed drain current: 40A
On-state resistance: 0.225Ω
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
auf Bestellung 40 Stücke:
Lieferzeit 7-14 Tag (e)
5+14.6 EUR
8+ 9.52 EUR
Mindestbestellmenge: 5
MSC180SMA120S MSC180SMA120S MICROCHIP (MICROSEMI) MSC180SMA120S.PDF Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 15A; Idm: 40A; 125W
Polarisation: unipolar
Drain-source voltage: 1.2kV
Power dissipation: 125W
Case: D3PAK
Mounting: SMD
Gate charge: 34nC
Technology: SiC
Kind of channel: enhanced
Drain current: 15A
Pulsed drain current: 40A
On-state resistance: 0.225Ω
Type of transistor: N-MOSFET
auf Bestellung 50 Stücke:
Lieferzeit 14-21 Tag (e)
5+16.1 EUR
7+ 10.54 EUR
Mindestbestellmenge: 5
MSC180SMA120S MSC180SMA120S MICROCHIP (MICROSEMI) MSC180SMA120S.PDF Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 15A; Idm: 40A; 125W
Polarisation: unipolar
Drain-source voltage: 1.2kV
Power dissipation: 125W
Case: D3PAK
Mounting: SMD
Gate charge: 34nC
Technology: SiC
Kind of channel: enhanced
Drain current: 15A
Pulsed drain current: 40A
On-state resistance: 0.225Ω
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
auf Bestellung 50 Stücke:
Lieferzeit 7-14 Tag (e)
5+16.1 EUR
7+ 10.54 EUR
Mindestbestellmenge: 5
MSC2X100SDA070J MICROCHIP (MICROSEMI) 1245012-msc2x101sda070j-msc2x100sda070j-datasheet MSC2X100SDA070J Diode modules
Produkt ist nicht verfügbar
MSC2X100SDA120J MICROCHIP (MICROSEMI) 1245013-msc2x101sda120j-msc2x100sda120j-datasheet MSC2X100SDA120J Diode modules
Produkt ist nicht verfügbar
MSC2X101SDA070J MICROCHIP (MICROSEMI) 1245012-msc2x101sda070j-msc2x100sda070j-datasheet MSC2X101SDA070J Diode modules
Produkt ist nicht verfügbar
MSC2X101SDA120J MICROCHIP (MICROSEMI) 1245013-msc2x101sda120j-msc2x100sda120j-datasheet MSC2X101SDA120J Diode modules
Produkt ist nicht verfügbar
MSC2X30SDA070J MICROCHIP (MICROSEMI) MSC2X30SDA070J Diode modules
Produkt ist nicht verfügbar
MSC2X30SDA120J MICROCHIP (MICROSEMI) MSC2X30SDA120J Diode modules
Produkt ist nicht verfügbar
MSC2X30SDA170J MICROCHIP (MICROSEMI) MSC2X30SDA170J Diode modules
Produkt ist nicht verfügbar
MSC2X31SDA070J MICROCHIP (MICROSEMI) MSC2X31SDA070J Diode modules
Produkt ist nicht verfügbar
MSC2X31SDA120J MICROCHIP (MICROSEMI) MSC2X31SDA120J Diode modules
Produkt ist nicht verfügbar
MSC2X31SDA170J MICROCHIP (MICROSEMI) MSC2X31SDA170J Diode modules
Produkt ist nicht verfügbar
MSC2X50SDA070J MICROCHIP (MICROSEMI) 1245011-msc2x51sda070j-msc2x50sda070j-datasheeet MSC2X50SDA070J Diode modules
Produkt ist nicht verfügbar
MSC2X50SDA120J MICROCHIP (MICROSEMI) 1244750-msc2x51sda120j-msc2x50sda120j-datasheet MSC2X50SDA120J Diode modules
Produkt ist nicht verfügbar
MSC2X50SDA170J MICROCHIP (MICROSEMI) MSC2X50SDA170J Diode modules
Produkt ist nicht verfügbar
MSC2X51SDA070J MICROCHIP (MICROSEMI) 1245011-msc2x51sda070j-msc2x50sda070j-datasheeet MSC2X51SDA070J Diode modules
Produkt ist nicht verfügbar
MSC2X51SDA120J MICROCHIP (MICROSEMI) 1244750-msc2x51sda120j-msc2x50sda120j-datasheet MSC2X51SDA120J Diode modules
Produkt ist nicht verfügbar
MSC2X51SDA170J MICROCHIP (MICROSEMI) MSC2X51SDA170J Diode modules
Produkt ist nicht verfügbar
MSC360SMA120B MSC360SMA120B MICROCHIP (MICROSEMI) MSC360SMA120B.PDF Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 8A; Idm: 28A; 78W
Polarisation: unipolar
Drain-source voltage: 1.2kV
Power dissipation: 78W
Case: TO247-3
Mounting: THT
Gate charge: 21nC
Technology: SiC
Kind of channel: enhanced
Drain current: 8A
Pulsed drain current: 28A
On-state resistance: 0.45Ω
Type of transistor: N-MOSFET
auf Bestellung 60 Stücke:
Lieferzeit 14-21 Tag (e)
7+10.5 EUR
10+ 7.28 EUR
Mindestbestellmenge: 7
MSC360SMA120B MSC360SMA120B MICROCHIP (MICROSEMI) MSC360SMA120B.PDF Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 8A; Idm: 28A; 78W
Polarisation: unipolar
Drain-source voltage: 1.2kV
Power dissipation: 78W
Case: TO247-3
Mounting: THT
Gate charge: 21nC
Technology: SiC
Kind of channel: enhanced
Drain current: 8A
Pulsed drain current: 28A
On-state resistance: 0.45Ω
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
auf Bestellung 60 Stücke:
Lieferzeit 7-14 Tag (e)
7+10.5 EUR
10+ 7.28 EUR
Mindestbestellmenge: 7
MSC360SMA120S MSC360SMA120S MICROCHIP (MICROSEMI) MSC360SMA120S.PDF Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 8A; Idm: 27A; 71W; D3PAK
Polarisation: unipolar
Drain-source voltage: 1.2kV
Power dissipation: 71W
Case: D3PAK
Mounting: SMD
Gate charge: 21nC
Technology: SiC
Kind of channel: enhanced
Drain current: 8A
Pulsed drain current: 27A
On-state resistance: 0.45Ω
Type of transistor: N-MOSFET
auf Bestellung 67 Stücke:
Lieferzeit 14-21 Tag (e)
8+9.28 EUR
10+ 9.09 EUR
25+ 8.88 EUR
Mindestbestellmenge: 8
MSC360SMA120S MSC360SMA120S MICROCHIP (MICROSEMI) MSC360SMA120S.PDF Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 8A; Idm: 27A; 71W; D3PAK
Polarisation: unipolar
Drain-source voltage: 1.2kV
Power dissipation: 71W
Case: D3PAK
Mounting: SMD
Gate charge: 21nC
Technology: SiC
Kind of channel: enhanced
Drain current: 8A
Pulsed drain current: 27A
On-state resistance: 0.45Ω
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
auf Bestellung 67 Stücke:
Lieferzeit 7-14 Tag (e)
8+9.28 EUR
10+ 9.09 EUR
25+ 8.88 EUR
Mindestbestellmenge: 8
MSC400SMA330B4 MICROCHIP (MICROSEMI) MSC400SMA330B4.PDF Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 3.3kV; 7A; Idm: 27A; 131W
Case: TO247-4
Drain-source voltage: 3.3kV
Drain current: 7A
On-state resistance: 0.52Ω
Type of transistor: N-MOSFET
Power dissipation: 131W
Polarisation: unipolar
Features of semiconductor devices: Kelvin terminal
Gate charge: 37nC
Technology: SiC
Kind of channel: enhanced
Pulsed drain current: 27A
Mounting: THT
Produkt ist nicht verfügbar
MSC400SMA330B4 MICROCHIP (MICROSEMI) MSC400SMA330B4.PDF Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 3.3kV; 7A; Idm: 27A; 131W
Case: TO247-4
Drain-source voltage: 3.3kV
Drain current: 7A
On-state resistance: 0.52Ω
Type of transistor: N-MOSFET
Power dissipation: 131W
Polarisation: unipolar
Features of semiconductor devices: Kelvin terminal
Gate charge: 37nC
Technology: SiC
Kind of channel: enhanced
Pulsed drain current: 27A
Mounting: THT
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
MSC40SM120JCU2 MICROCHIP (MICROSEMI) 1244795-msc40sm120jcu2-datasheet Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 44A; SOT227B; screw; Idm: 110A
Case: SOT227B
Semiconductor structure: SiC diode/transistor
Electrical mounting: screw
Mechanical mounting: screw
Topology: boost chopper
Technology: SiC
Power dissipation: 245W
Pulsed drain current: 110A
Type of module: MOSFET transistor
Drain-source voltage: 1.2kV
Drain current: 44A
On-state resistance: 50mΩ
Produkt ist nicht verfügbar
MSC40SM120JCU2 MICROCHIP (MICROSEMI) 1244795-msc40sm120jcu2-datasheet Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 44A; SOT227B; screw; Idm: 110A
Case: SOT227B
Semiconductor structure: SiC diode/transistor
Electrical mounting: screw
Mechanical mounting: screw
Topology: boost chopper
Technology: SiC
Power dissipation: 245W
Pulsed drain current: 110A
Type of module: MOSFET transistor
Drain-source voltage: 1.2kV
Drain current: 44A
On-state resistance: 50mΩ
Produkt ist nicht verfügbar
MSC40SM120JCU3 MICROCHIP (MICROSEMI) 1244796-msc40sm120jcu3-datasheet Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 44A; SOT227B; screw; Idm: 110A
Case: SOT227B
Semiconductor structure: SiC diode/transistor
Electrical mounting: screw
Mechanical mounting: screw
Topology: buck chopper
Technology: SiC
Power dissipation: 245W
Pulsed drain current: 110A
Type of module: MOSFET transistor
Drain-source voltage: 1.2kV
Drain current: 44A
On-state resistance: 50mΩ
Produkt ist nicht verfügbar
MSC40SM120JCU3 MICROCHIP (MICROSEMI) 1244796-msc40sm120jcu3-datasheet Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 44A; SOT227B; screw; Idm: 110A
Case: SOT227B
Semiconductor structure: SiC diode/transistor
Electrical mounting: screw
Mechanical mounting: screw
Topology: buck chopper
Technology: SiC
Power dissipation: 245W
Pulsed drain current: 110A
Type of module: MOSFET transistor
Drain-source voltage: 1.2kV
Drain current: 44A
On-state resistance: 50mΩ
Produkt ist nicht verfügbar
MSC50DC120HJ MICROCHIP (MICROSEMI) MSC50DC120HJ.pdf Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 50A; screw; screw
Version: module
Technology: SiC
Features of semiconductor devices: Schottky
Mechanical mounting: screw
Leads: M4 screws
Max. off-state voltage: 1.2kV
Electrical mounting: screw
Load current: 50A
Kind of package: tube
Case: SOT227B
Type of bridge rectifier: single-phase
Max. forward voltage: 2.1V
Produkt ist nicht verfügbar
MSC50DC120HJ MICROCHIP (MICROSEMI) MSC50DC120HJ.pdf Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 50A; screw; screw
Version: module
Technology: SiC
Features of semiconductor devices: Schottky
Mechanical mounting: screw
Leads: M4 screws
Max. off-state voltage: 1.2kV
Electrical mounting: screw
Load current: 50A
Kind of package: tube
Case: SOT227B
Type of bridge rectifier: single-phase
Max. forward voltage: 2.1V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
MSC50DC170HJ MICROCHIP (MICROSEMI) MSC50DC170HJ.pdf Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 1.7kV; If: 50A; screw; screw
Version: module
Technology: SiC
Features of semiconductor devices: Schottky
Mechanical mounting: screw
Leads: M4 screws
Max. off-state voltage: 1.7kV
Electrical mounting: screw
Load current: 50A
Kind of package: tube
Case: SOT227B
Type of bridge rectifier: single-phase
Max. forward voltage: 2V
Produkt ist nicht verfügbar
MSC50DC170HJ MICROCHIP (MICROSEMI) MSC50DC170HJ.pdf Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 1.7kV; If: 50A; screw; screw
Version: module
Technology: SiC
Features of semiconductor devices: Schottky
Mechanical mounting: screw
Leads: M4 screws
Max. off-state voltage: 1.7kV
Electrical mounting: screw
Load current: 50A
Kind of package: tube
Case: SOT227B
Type of bridge rectifier: single-phase
Max. forward voltage: 2V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
MSC50DC70HJ MICROCHIP (MICROSEMI) 1244349-msc50dch70hj-datasheet MSC50DC70HJ Sing. ph. diode bridge rectif. - others
Produkt ist nicht verfügbar
MSC70SM120JCU2 MICROCHIP (MICROSEMI) 1244797-msc70sm120jcu2-datasheet Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 71A; SOT227B; screw; Idm: 180A
Type of module: MOSFET transistor
Technology: SiC
Topology: boost chopper
Pulsed drain current: 180A
Case: SOT227B
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 71A
On-state resistance: 31mΩ
Power dissipation: 395W
Electrical mounting: screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
MSC70SM120JCU2 MICROCHIP (MICROSEMI) 1244797-msc70sm120jcu2-datasheet Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 71A; SOT227B; screw; Idm: 180A
Type of module: MOSFET transistor
Technology: SiC
Topology: boost chopper
Pulsed drain current: 180A
Case: SOT227B
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 71A
On-state resistance: 31mΩ
Power dissipation: 395W
Electrical mounting: screw
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
MSC70SM120JCU3 MICROCHIP (MICROSEMI) 1244798-msc70sm120jcu3-datasheet Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 71A; SOT227B; screw; Idm: 180A
Type of module: MOSFET transistor
Technology: SiC
Topology: buck chopper
Pulsed drain current: 180A
Case: SOT227B
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 71A
On-state resistance: 31mΩ
Power dissipation: 395W
Electrical mounting: screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
MSC70SM120JCU3 MICROCHIP (MICROSEMI) 1244798-msc70sm120jcu3-datasheet Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 71A; SOT227B; screw; Idm: 180A
Type of module: MOSFET transistor
Technology: SiC
Topology: buck chopper
Pulsed drain current: 180A
Case: SOT227B
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 71A
On-state resistance: 31mΩ
Power dissipation: 395W
Electrical mounting: screw
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
MSC750SMA170B MSC750SMA170B MICROCHIP (MICROSEMI) 1244952-msc750sma170b-datasheet Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 5A; Idm: 12A; 68W
Polarisation: unipolar
Drain-source voltage: 1.7kV
Power dissipation: 68W
Case: TO247-3
Mounting: THT
Gate charge: 18nC
Technology: SiC
Kind of channel: enhanced
Drain current: 5A
Pulsed drain current: 12A
On-state resistance: 940mΩ
Type of transistor: N-MOSFET
auf Bestellung 37 Stücke:
Lieferzeit 14-21 Tag (e)
11+6.84 EUR
12+ 6.29 EUR
13+ 5.95 EUR
Mindestbestellmenge: 11
MSC750SMA170B MSC750SMA170B MICROCHIP (MICROSEMI) 1244952-msc750sma170b-datasheet Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 5A; Idm: 12A; 68W
Polarisation: unipolar
Drain-source voltage: 1.7kV
Power dissipation: 68W
Case: TO247-3
Mounting: THT
Gate charge: 18nC
Technology: SiC
Kind of channel: enhanced
Drain current: 5A
Pulsed drain current: 12A
On-state resistance: 940mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
auf Bestellung 37 Stücke:
Lieferzeit 7-14 Tag (e)
11+6.84 EUR
12+ 6.29 EUR
13+ 5.95 EUR
90+ 5.69 EUR
Mindestbestellmenge: 11
MSC750SMA170B4 MSC750SMA170B4 MICROCHIP (MICROSEMI) MSC750SMA170B4.PDF Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 5A; Idm: 12A; 68W
Case: TO247-4
Mounting: THT
Drain-source voltage: 1.7kV
Drain current: 5A
On-state resistance: 940mΩ
Type of transistor: N-MOSFET
Power dissipation: 68W
Polarisation: unipolar
Features of semiconductor devices: Kelvin terminal
Gate charge: 11nC
Technology: SiC
Kind of channel: enhanced
Pulsed drain current: 12A
Produkt ist nicht verfügbar
MSC750SMA170B4 MSC750SMA170B4 MICROCHIP (MICROSEMI) MSC750SMA170B4.PDF Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 5A; Idm: 12A; 68W
Case: TO247-4
Mounting: THT
Drain-source voltage: 1.7kV
Drain current: 5A
On-state resistance: 940mΩ
Type of transistor: N-MOSFET
Power dissipation: 68W
Polarisation: unipolar
Features of semiconductor devices: Kelvin terminal
Gate charge: 11nC
Technology: SiC
Kind of channel: enhanced
Pulsed drain current: 12A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
MSC750SMA170S MSC750SMA170S MICROCHIP (MICROSEMI) 1244929-msc750sma170s-datasheet Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 4A; Idm: 12A; 63W; D3PAK
Case: D3PAK
Mounting: SMD
Drain-source voltage: 1.7kV
Drain current: 4A
On-state resistance: 940mΩ
Type of transistor: N-MOSFET
Power dissipation: 63W
Polarisation: unipolar
Gate charge: 18nC
Technology: SiC
Kind of channel: enhanced
Pulsed drain current: 12A
Produkt ist nicht verfügbar
MSC750SMA170S MSC750SMA170S MICROCHIP (MICROSEMI) 1244929-msc750sma170s-datasheet Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 4A; Idm: 12A; 63W; D3PAK
Case: D3PAK
Mounting: SMD
Drain-source voltage: 1.7kV
Drain current: 4A
On-state resistance: 940mΩ
Type of transistor: N-MOSFET
Power dissipation: 63W
Polarisation: unipolar
Gate charge: 18nC
Technology: SiC
Kind of channel: enhanced
Pulsed drain current: 12A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
MSC080SMA330B4 MSC080SMA330B4.PDF
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 3.3kV; 26A; Idm: 100A; 381W
Technology: SiC
Mounting: THT
Features of semiconductor devices: Kelvin terminal
Case: TO247-4
Power dissipation: 381W
Gate charge: 55nC
Kind of channel: enhanced
Pulsed drain current: 100A
Drain-source voltage: 3.3kV
Drain current: 26A
On-state resistance: 0.105Ω
Type of transistor: N-MOSFET
Polarisation: unipolar
Produkt ist nicht verfügbar
MSC080SMA330B4 MSC080SMA330B4.PDF
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 3.3kV; 26A; Idm: 100A; 381W
Technology: SiC
Mounting: THT
Features of semiconductor devices: Kelvin terminal
Case: TO247-4
Power dissipation: 381W
Gate charge: 55nC
Kind of channel: enhanced
Pulsed drain current: 100A
Drain-source voltage: 3.3kV
Drain current: 26A
On-state resistance: 0.105Ω
Type of transistor: N-MOSFET
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
MSC090SDA330B2
Hersteller: MICROCHIP (MICROSEMI)
MSC090SDA330B2 THT Schottky diodes
Produkt ist nicht verfügbar
MSC090SMA070B 1244458-msc090sma070b-datasheet
MSC090SMA070B
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 700V; 20A; Idm: 69A; 90W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 20A
Pulsed drain current: 69A
Power dissipation: 90W
Case: TO247-3
On-state resistance: 108mΩ
Mounting: THT
Gate charge: 38nC
Kind of channel: enhanced
auf Bestellung 35 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
8+8.97 EUR
9+ 8.22 EUR
Mindestbestellmenge: 8
MSC090SMA070B 1244458-msc090sma070b-datasheet
MSC090SMA070B
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 700V; 20A; Idm: 69A; 90W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 20A
Pulsed drain current: 69A
Power dissipation: 90W
Case: TO247-3
On-state resistance: 108mΩ
Mounting: THT
Gate charge: 38nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 35 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
8+8.97 EUR
9+ 8.22 EUR
Mindestbestellmenge: 8
MSC090SMA070S 1244481-msc090sma070s-datasheet
MSC090SMA070S
Hersteller: MICROCHIP (MICROSEMI)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 700V; 18A; Idm: 65A; 91W; D3PAK
Polarisation: unipolar
Drain-source voltage: 700V
Power dissipation: 91W
Case: D3PAK
Mounting: SMD
Gate charge: 38nC
Technology: SiC
Kind of channel: enhanced
Drain current: 18A
Pulsed drain current: 65A
On-state resistance: 0.115Ω
Type of transistor: N-MOSFET
auf Bestellung 60 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
7+10.52 EUR
8+ 9.35 EUR
25+ 8.94 EUR
Mindestbestellmenge: 7
MSC090SMA070S 1244481-msc090sma070s-datasheet
MSC090SMA070S
Hersteller: MICROCHIP (MICROSEMI)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 700V; 18A; Idm: 65A; 91W; D3PAK
Polarisation: unipolar
Drain-source voltage: 700V
Power dissipation: 91W
Case: D3PAK
Mounting: SMD
Gate charge: 38nC
Technology: SiC
Kind of channel: enhanced
Drain current: 18A
Pulsed drain current: 65A
On-state resistance: 0.115Ω
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
auf Bestellung 60 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
7+10.52 EUR
8+ 9.35 EUR
25+ 8.94 EUR
Mindestbestellmenge: 7
MSC100SM70JCU2 1244931-msc100sm70jcu2-datasheet
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 700V; 98A; SOT227B; screw; Idm: 250A
Technology: SiC
Drain-source voltage: 700V
Drain current: 98A
Pulsed drain current: 250A
Power dissipation: 365W
Case: SOT227B
On-state resistance: 19mΩ
Semiconductor structure: SiC diode/transistor
Electrical mounting: screw
Topology: boost chopper
Mechanical mounting: screw
Type of module: MOSFET transistor
Produkt ist nicht verfügbar
MSC100SM70JCU2 1244931-msc100sm70jcu2-datasheet
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 700V; 98A; SOT227B; screw; Idm: 250A
Technology: SiC
Drain-source voltage: 700V
Drain current: 98A
Pulsed drain current: 250A
Power dissipation: 365W
Case: SOT227B
On-state resistance: 19mΩ
Semiconductor structure: SiC diode/transistor
Electrical mounting: screw
Topology: boost chopper
Mechanical mounting: screw
Type of module: MOSFET transistor
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
MSC100SM70JCU3 1244932-msc100sm70jcu3-datasheet
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 700V; 98A; SOT227B; screw; Idm: 250A
Technology: SiC
Drain-source voltage: 700V
Drain current: 98A
Pulsed drain current: 250A
Power dissipation: 365W
Case: SOT227B
On-state resistance: 19mΩ
Semiconductor structure: SiC diode/transistor
Electrical mounting: screw
Topology: buck chopper
Mechanical mounting: screw
Type of module: MOSFET transistor
Produkt ist nicht verfügbar
MSC100SM70JCU3 1244932-msc100sm70jcu3-datasheet
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 700V; 98A; SOT227B; screw; Idm: 250A
Technology: SiC
Drain-source voltage: 700V
Drain current: 98A
Pulsed drain current: 250A
Power dissipation: 365W
Case: SOT227B
On-state resistance: 19mΩ
Semiconductor structure: SiC diode/transistor
Electrical mounting: screw
Topology: buck chopper
Mechanical mounting: screw
Type of module: MOSFET transistor
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
MSC130SM120JCU2 1244799-msc130sm120jcu2-datasheet
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 138A; SOT227B; screw; 745W
Type of module: MOSFET transistor
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 138A
Case: SOT227B
Topology: boost chopper
Electrical mounting: screw
On-state resistance: 16mΩ
Pulsed drain current: 350A
Power dissipation: 745W
Technology: SiC
Mechanical mounting: screw
Produkt ist nicht verfügbar
MSC130SM120JCU2 1244799-msc130sm120jcu2-datasheet
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 138A; SOT227B; screw; 745W
Type of module: MOSFET transistor
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 138A
Case: SOT227B
Topology: boost chopper
Electrical mounting: screw
On-state resistance: 16mΩ
Pulsed drain current: 350A
Power dissipation: 745W
Technology: SiC
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
MSC130SM120JCU3 1244800-msc130sm120jcu3-datasheet
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 138A; SOT227B; screw; 745W
Type of module: MOSFET transistor
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 138A
Case: SOT227B
Topology: buck chopper
Electrical mounting: screw
On-state resistance: 16mΩ
Pulsed drain current: 350A
Power dissipation: 745W
Technology: SiC
Mechanical mounting: screw
Produkt ist nicht verfügbar
MSC130SM120JCU3 1244800-msc130sm120jcu3-datasheet
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 138A; SOT227B; screw; 745W
Type of module: MOSFET transistor
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 138A
Case: SOT227B
Topology: buck chopper
Electrical mounting: screw
On-state resistance: 16mΩ
Pulsed drain current: 350A
Power dissipation: 745W
Technology: SiC
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
MSC180SMA120B MSC180SMA120B.pdf
MSC180SMA120B
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 15A; Idm: 40A; 127W
Polarisation: unipolar
Drain-source voltage: 1.2kV
Power dissipation: 127W
Case: TO247-3
Mounting: THT
Gate charge: 34nC
Technology: SiC
Kind of channel: enhanced
Drain current: 15A
Pulsed drain current: 40A
On-state resistance: 0.225Ω
Type of transistor: N-MOSFET
auf Bestellung 40 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
5+14.6 EUR
8+ 9.52 EUR
Mindestbestellmenge: 5
MSC180SMA120B MSC180SMA120B.pdf
MSC180SMA120B
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 15A; Idm: 40A; 127W
Polarisation: unipolar
Drain-source voltage: 1.2kV
Power dissipation: 127W
Case: TO247-3
Mounting: THT
Gate charge: 34nC
Technology: SiC
Kind of channel: enhanced
Drain current: 15A
Pulsed drain current: 40A
On-state resistance: 0.225Ω
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
auf Bestellung 40 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
5+14.6 EUR
8+ 9.52 EUR
Mindestbestellmenge: 5
MSC180SMA120S MSC180SMA120S.PDF
MSC180SMA120S
Hersteller: MICROCHIP (MICROSEMI)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 15A; Idm: 40A; 125W
Polarisation: unipolar
Drain-source voltage: 1.2kV
Power dissipation: 125W
Case: D3PAK
Mounting: SMD
Gate charge: 34nC
Technology: SiC
Kind of channel: enhanced
Drain current: 15A
Pulsed drain current: 40A
On-state resistance: 0.225Ω
Type of transistor: N-MOSFET
auf Bestellung 50 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
5+16.1 EUR
7+ 10.54 EUR
Mindestbestellmenge: 5
MSC180SMA120S MSC180SMA120S.PDF
MSC180SMA120S
Hersteller: MICROCHIP (MICROSEMI)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 15A; Idm: 40A; 125W
Polarisation: unipolar
Drain-source voltage: 1.2kV
Power dissipation: 125W
Case: D3PAK
Mounting: SMD
Gate charge: 34nC
Technology: SiC
Kind of channel: enhanced
Drain current: 15A
Pulsed drain current: 40A
On-state resistance: 0.225Ω
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
auf Bestellung 50 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
5+16.1 EUR
7+ 10.54 EUR
Mindestbestellmenge: 5
MSC2X100SDA070J 1245012-msc2x101sda070j-msc2x100sda070j-datasheet
Hersteller: MICROCHIP (MICROSEMI)
MSC2X100SDA070J Diode modules
Produkt ist nicht verfügbar
MSC2X100SDA120J 1245013-msc2x101sda120j-msc2x100sda120j-datasheet
Hersteller: MICROCHIP (MICROSEMI)
MSC2X100SDA120J Diode modules
Produkt ist nicht verfügbar
MSC2X101SDA070J 1245012-msc2x101sda070j-msc2x100sda070j-datasheet
Hersteller: MICROCHIP (MICROSEMI)
MSC2X101SDA070J Diode modules
Produkt ist nicht verfügbar
MSC2X101SDA120J 1245013-msc2x101sda120j-msc2x100sda120j-datasheet
Hersteller: MICROCHIP (MICROSEMI)
MSC2X101SDA120J Diode modules
Produkt ist nicht verfügbar
MSC2X30SDA070J
Hersteller: MICROCHIP (MICROSEMI)
MSC2X30SDA070J Diode modules
Produkt ist nicht verfügbar
MSC2X30SDA120J
Hersteller: MICROCHIP (MICROSEMI)
MSC2X30SDA120J Diode modules
Produkt ist nicht verfügbar
MSC2X30SDA170J
Hersteller: MICROCHIP (MICROSEMI)
MSC2X30SDA170J Diode modules
Produkt ist nicht verfügbar
MSC2X31SDA070J
Hersteller: MICROCHIP (MICROSEMI)
MSC2X31SDA070J Diode modules
Produkt ist nicht verfügbar
MSC2X31SDA120J
Hersteller: MICROCHIP (MICROSEMI)
MSC2X31SDA120J Diode modules
Produkt ist nicht verfügbar
MSC2X31SDA170J
Hersteller: MICROCHIP (MICROSEMI)
MSC2X31SDA170J Diode modules
Produkt ist nicht verfügbar
MSC2X50SDA070J 1245011-msc2x51sda070j-msc2x50sda070j-datasheeet
Hersteller: MICROCHIP (MICROSEMI)
MSC2X50SDA070J Diode modules
Produkt ist nicht verfügbar
MSC2X50SDA120J 1244750-msc2x51sda120j-msc2x50sda120j-datasheet
Hersteller: MICROCHIP (MICROSEMI)
MSC2X50SDA120J Diode modules
Produkt ist nicht verfügbar
MSC2X50SDA170J
Hersteller: MICROCHIP (MICROSEMI)
MSC2X50SDA170J Diode modules
Produkt ist nicht verfügbar
MSC2X51SDA070J 1245011-msc2x51sda070j-msc2x50sda070j-datasheeet
Hersteller: MICROCHIP (MICROSEMI)
MSC2X51SDA070J Diode modules
Produkt ist nicht verfügbar
MSC2X51SDA120J 1244750-msc2x51sda120j-msc2x50sda120j-datasheet
Hersteller: MICROCHIP (MICROSEMI)
MSC2X51SDA120J Diode modules
Produkt ist nicht verfügbar
MSC2X51SDA170J
Hersteller: MICROCHIP (MICROSEMI)
MSC2X51SDA170J Diode modules
Produkt ist nicht verfügbar
MSC360SMA120B MSC360SMA120B.PDF
MSC360SMA120B
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 8A; Idm: 28A; 78W
Polarisation: unipolar
Drain-source voltage: 1.2kV
Power dissipation: 78W
Case: TO247-3
Mounting: THT
Gate charge: 21nC
Technology: SiC
Kind of channel: enhanced
Drain current: 8A
Pulsed drain current: 28A
On-state resistance: 0.45Ω
Type of transistor: N-MOSFET
auf Bestellung 60 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
7+10.5 EUR
10+ 7.28 EUR
Mindestbestellmenge: 7
MSC360SMA120B MSC360SMA120B.PDF
MSC360SMA120B
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 8A; Idm: 28A; 78W
Polarisation: unipolar
Drain-source voltage: 1.2kV
Power dissipation: 78W
Case: TO247-3
Mounting: THT
Gate charge: 21nC
Technology: SiC
Kind of channel: enhanced
Drain current: 8A
Pulsed drain current: 28A
On-state resistance: 0.45Ω
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
auf Bestellung 60 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
7+10.5 EUR
10+ 7.28 EUR
Mindestbestellmenge: 7
MSC360SMA120S MSC360SMA120S.PDF
MSC360SMA120S
Hersteller: MICROCHIP (MICROSEMI)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 8A; Idm: 27A; 71W; D3PAK
Polarisation: unipolar
Drain-source voltage: 1.2kV
Power dissipation: 71W
Case: D3PAK
Mounting: SMD
Gate charge: 21nC
Technology: SiC
Kind of channel: enhanced
Drain current: 8A
Pulsed drain current: 27A
On-state resistance: 0.45Ω
Type of transistor: N-MOSFET
auf Bestellung 67 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
8+9.28 EUR
10+ 9.09 EUR
25+ 8.88 EUR
Mindestbestellmenge: 8
MSC360SMA120S MSC360SMA120S.PDF
MSC360SMA120S
Hersteller: MICROCHIP (MICROSEMI)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 8A; Idm: 27A; 71W; D3PAK
Polarisation: unipolar
Drain-source voltage: 1.2kV
Power dissipation: 71W
Case: D3PAK
Mounting: SMD
Gate charge: 21nC
Technology: SiC
Kind of channel: enhanced
Drain current: 8A
Pulsed drain current: 27A
On-state resistance: 0.45Ω
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
auf Bestellung 67 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
8+9.28 EUR
10+ 9.09 EUR
25+ 8.88 EUR
Mindestbestellmenge: 8
MSC400SMA330B4 MSC400SMA330B4.PDF
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 3.3kV; 7A; Idm: 27A; 131W
Case: TO247-4
Drain-source voltage: 3.3kV
Drain current: 7A
On-state resistance: 0.52Ω
Type of transistor: N-MOSFET
Power dissipation: 131W
Polarisation: unipolar
Features of semiconductor devices: Kelvin terminal
Gate charge: 37nC
Technology: SiC
Kind of channel: enhanced
Pulsed drain current: 27A
Mounting: THT
Produkt ist nicht verfügbar
MSC400SMA330B4 MSC400SMA330B4.PDF
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 3.3kV; 7A; Idm: 27A; 131W
Case: TO247-4
Drain-source voltage: 3.3kV
Drain current: 7A
On-state resistance: 0.52Ω
Type of transistor: N-MOSFET
Power dissipation: 131W
Polarisation: unipolar
Features of semiconductor devices: Kelvin terminal
Gate charge: 37nC
Technology: SiC
Kind of channel: enhanced
Pulsed drain current: 27A
Mounting: THT
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
MSC40SM120JCU2 1244795-msc40sm120jcu2-datasheet
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 44A; SOT227B; screw; Idm: 110A
Case: SOT227B
Semiconductor structure: SiC diode/transistor
Electrical mounting: screw
Mechanical mounting: screw
Topology: boost chopper
Technology: SiC
Power dissipation: 245W
Pulsed drain current: 110A
Type of module: MOSFET transistor
Drain-source voltage: 1.2kV
Drain current: 44A
On-state resistance: 50mΩ
Produkt ist nicht verfügbar
MSC40SM120JCU2 1244795-msc40sm120jcu2-datasheet
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 44A; SOT227B; screw; Idm: 110A
Case: SOT227B
Semiconductor structure: SiC diode/transistor
Electrical mounting: screw
Mechanical mounting: screw
Topology: boost chopper
Technology: SiC
Power dissipation: 245W
Pulsed drain current: 110A
Type of module: MOSFET transistor
Drain-source voltage: 1.2kV
Drain current: 44A
On-state resistance: 50mΩ
Produkt ist nicht verfügbar
MSC40SM120JCU3 1244796-msc40sm120jcu3-datasheet
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 44A; SOT227B; screw; Idm: 110A
Case: SOT227B
Semiconductor structure: SiC diode/transistor
Electrical mounting: screw
Mechanical mounting: screw
Topology: buck chopper
Technology: SiC
Power dissipation: 245W
Pulsed drain current: 110A
Type of module: MOSFET transistor
Drain-source voltage: 1.2kV
Drain current: 44A
On-state resistance: 50mΩ
Produkt ist nicht verfügbar
MSC40SM120JCU3 1244796-msc40sm120jcu3-datasheet
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 44A; SOT227B; screw; Idm: 110A
Case: SOT227B
Semiconductor structure: SiC diode/transistor
Electrical mounting: screw
Mechanical mounting: screw
Topology: buck chopper
Technology: SiC
Power dissipation: 245W
Pulsed drain current: 110A
Type of module: MOSFET transistor
Drain-source voltage: 1.2kV
Drain current: 44A
On-state resistance: 50mΩ
Produkt ist nicht verfügbar
MSC50DC120HJ MSC50DC120HJ.pdf
Hersteller: MICROCHIP (MICROSEMI)
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 50A; screw; screw
Version: module
Technology: SiC
Features of semiconductor devices: Schottky
Mechanical mounting: screw
Leads: M4 screws
Max. off-state voltage: 1.2kV
Electrical mounting: screw
Load current: 50A
Kind of package: tube
Case: SOT227B
Type of bridge rectifier: single-phase
Max. forward voltage: 2.1V
Produkt ist nicht verfügbar
MSC50DC120HJ MSC50DC120HJ.pdf
Hersteller: MICROCHIP (MICROSEMI)
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 50A; screw; screw
Version: module
Technology: SiC
Features of semiconductor devices: Schottky
Mechanical mounting: screw
Leads: M4 screws
Max. off-state voltage: 1.2kV
Electrical mounting: screw
Load current: 50A
Kind of package: tube
Case: SOT227B
Type of bridge rectifier: single-phase
Max. forward voltage: 2.1V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
MSC50DC170HJ MSC50DC170HJ.pdf
Hersteller: MICROCHIP (MICROSEMI)
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 1.7kV; If: 50A; screw; screw
Version: module
Technology: SiC
Features of semiconductor devices: Schottky
Mechanical mounting: screw
Leads: M4 screws
Max. off-state voltage: 1.7kV
Electrical mounting: screw
Load current: 50A
Kind of package: tube
Case: SOT227B
Type of bridge rectifier: single-phase
Max. forward voltage: 2V
Produkt ist nicht verfügbar
MSC50DC170HJ MSC50DC170HJ.pdf
Hersteller: MICROCHIP (MICROSEMI)
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 1.7kV; If: 50A; screw; screw
Version: module
Technology: SiC
Features of semiconductor devices: Schottky
Mechanical mounting: screw
Leads: M4 screws
Max. off-state voltage: 1.7kV
Electrical mounting: screw
Load current: 50A
Kind of package: tube
Case: SOT227B
Type of bridge rectifier: single-phase
Max. forward voltage: 2V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
MSC50DC70HJ 1244349-msc50dch70hj-datasheet
Hersteller: MICROCHIP (MICROSEMI)
MSC50DC70HJ Sing. ph. diode bridge rectif. - others
Produkt ist nicht verfügbar
MSC70SM120JCU2 1244797-msc70sm120jcu2-datasheet
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 71A; SOT227B; screw; Idm: 180A
Type of module: MOSFET transistor
Technology: SiC
Topology: boost chopper
Pulsed drain current: 180A
Case: SOT227B
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 71A
On-state resistance: 31mΩ
Power dissipation: 395W
Electrical mounting: screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
MSC70SM120JCU2 1244797-msc70sm120jcu2-datasheet
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 71A; SOT227B; screw; Idm: 180A
Type of module: MOSFET transistor
Technology: SiC
Topology: boost chopper
Pulsed drain current: 180A
Case: SOT227B
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 71A
On-state resistance: 31mΩ
Power dissipation: 395W
Electrical mounting: screw
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
MSC70SM120JCU3 1244798-msc70sm120jcu3-datasheet
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 71A; SOT227B; screw; Idm: 180A
Type of module: MOSFET transistor
Technology: SiC
Topology: buck chopper
Pulsed drain current: 180A
Case: SOT227B
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 71A
On-state resistance: 31mΩ
Power dissipation: 395W
Electrical mounting: screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
MSC70SM120JCU3 1244798-msc70sm120jcu3-datasheet
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 71A; SOT227B; screw; Idm: 180A
Type of module: MOSFET transistor
Technology: SiC
Topology: buck chopper
Pulsed drain current: 180A
Case: SOT227B
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 71A
On-state resistance: 31mΩ
Power dissipation: 395W
Electrical mounting: screw
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
MSC750SMA170B 1244952-msc750sma170b-datasheet
MSC750SMA170B
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 5A; Idm: 12A; 68W
Polarisation: unipolar
Drain-source voltage: 1.7kV
Power dissipation: 68W
Case: TO247-3
Mounting: THT
Gate charge: 18nC
Technology: SiC
Kind of channel: enhanced
Drain current: 5A
Pulsed drain current: 12A
On-state resistance: 940mΩ
Type of transistor: N-MOSFET
auf Bestellung 37 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
11+6.84 EUR
12+ 6.29 EUR
13+ 5.95 EUR
Mindestbestellmenge: 11
MSC750SMA170B 1244952-msc750sma170b-datasheet
MSC750SMA170B
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 5A; Idm: 12A; 68W
Polarisation: unipolar
Drain-source voltage: 1.7kV
Power dissipation: 68W
Case: TO247-3
Mounting: THT
Gate charge: 18nC
Technology: SiC
Kind of channel: enhanced
Drain current: 5A
Pulsed drain current: 12A
On-state resistance: 940mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
auf Bestellung 37 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
11+6.84 EUR
12+ 6.29 EUR
13+ 5.95 EUR
90+ 5.69 EUR
Mindestbestellmenge: 11
MSC750SMA170B4 MSC750SMA170B4.PDF
MSC750SMA170B4
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 5A; Idm: 12A; 68W
Case: TO247-4
Mounting: THT
Drain-source voltage: 1.7kV
Drain current: 5A
On-state resistance: 940mΩ
Type of transistor: N-MOSFET
Power dissipation: 68W
Polarisation: unipolar
Features of semiconductor devices: Kelvin terminal
Gate charge: 11nC
Technology: SiC
Kind of channel: enhanced
Pulsed drain current: 12A
Produkt ist nicht verfügbar
MSC750SMA170B4 MSC750SMA170B4.PDF
MSC750SMA170B4
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 5A; Idm: 12A; 68W
Case: TO247-4
Mounting: THT
Drain-source voltage: 1.7kV
Drain current: 5A
On-state resistance: 940mΩ
Type of transistor: N-MOSFET
Power dissipation: 68W
Polarisation: unipolar
Features of semiconductor devices: Kelvin terminal
Gate charge: 11nC
Technology: SiC
Kind of channel: enhanced
Pulsed drain current: 12A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
MSC750SMA170S 1244929-msc750sma170s-datasheet
MSC750SMA170S
Hersteller: MICROCHIP (MICROSEMI)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 4A; Idm: 12A; 63W; D3PAK
Case: D3PAK
Mounting: SMD
Drain-source voltage: 1.7kV
Drain current: 4A
On-state resistance: 940mΩ
Type of transistor: N-MOSFET
Power dissipation: 63W
Polarisation: unipolar
Gate charge: 18nC
Technology: SiC
Kind of channel: enhanced
Pulsed drain current: 12A
Produkt ist nicht verfügbar
MSC750SMA170S 1244929-msc750sma170s-datasheet
MSC750SMA170S
Hersteller: MICROCHIP (MICROSEMI)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 4A; Idm: 12A; 63W; D3PAK
Case: D3PAK
Mounting: SMD
Drain-source voltage: 1.7kV
Drain current: 4A
On-state resistance: 940mΩ
Type of transistor: N-MOSFET
Power dissipation: 63W
Polarisation: unipolar
Gate charge: 18nC
Technology: SiC
Kind of channel: enhanced
Pulsed drain current: 12A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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