MSC70SM120JCU3 Microchip Technology
Hersteller: Microchip Technology
Description: SICFET N-CH 1.2KV 89A SOT227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 89A (Tc)
Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V
Power Dissipation (Max): 395W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Supplier Device Package: SOT-227 (ISOTOP®)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 232 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 3020 pF @ 1000 V
Description: SICFET N-CH 1.2KV 89A SOT227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 89A (Tc)
Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V
Power Dissipation (Max): 395W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Supplier Device Package: SOT-227 (ISOTOP®)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 232 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 3020 pF @ 1000 V
auf Bestellung 6 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1+ | 116.16 EUR |
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Technische Details MSC70SM120JCU3 Microchip Technology
Description: SICFET N-CH 1.2KV 89A SOT227, Packaging: Tube, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 89A (Tc), Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V, Power Dissipation (Max): 395W (Tc), Vgs(th) (Max) @ Id: 2.8V @ 1mA, Supplier Device Package: SOT-227 (ISOTOP®), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 20V, Vgs (Max): +25V, -10V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 232 nC @ 20 V, Input Capacitance (Ciss) (Max) @ Vds: 3020 pF @ 1000 V.
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MSC70SM120JCU3 | Hersteller : MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 1.2kV; 71A; SOT227B; screw; Idm: 180A Type of module: MOSFET transistor Technology: SiC Topology: buck chopper Pulsed drain current: 180A Case: SOT227B Semiconductor structure: SiC diode/transistor Drain-source voltage: 1.2kV Drain current: 71A On-state resistance: 31mΩ Power dissipation: 395W Electrical mounting: screw Mechanical mounting: screw |
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