MSC750SMA170B4 Microchip Technology
auf Bestellung 73 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1+ | 9.19 EUR |
30+ | 8.47 EUR |
270+ | 7.37 EUR |
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Technische Details MSC750SMA170B4 Microchip Technology
Description: TRANS SJT 1700V TO247-4, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 7A (Tc), Rds On (Max) @ Id, Vgs: 940mOhm @ 2.5A, 20V, Power Dissipation (Max): 68W (Tc), Vgs(th) (Max) @ Id: 3.25V @ 100µA (Typ), Supplier Device Package: TO-247-4, Drive Voltage (Max Rds On, Min Rds On): 20V, Vgs (Max): +23V, -10V, Drain to Source Voltage (Vdss): 1700 V, Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 20 V, Input Capacitance (Ciss) (Max) @ Vds: 184 pF @ 1360 V.
Weitere Produktangebote MSC750SMA170B4
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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MSC750SMA170B4 | Hersteller : Microchip Technology |
Description: TRANS SJT 1700V TO247-4 Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Rds On (Max) @ Id, Vgs: 940mOhm @ 2.5A, 20V Power Dissipation (Max): 68W (Tc) Vgs(th) (Max) @ Id: 3.25V @ 100µA (Typ) Supplier Device Package: TO-247-4 Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): +23V, -10V Drain to Source Voltage (Vdss): 1700 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 184 pF @ 1360 V |
auf Bestellung 1 Stücke: Lieferzeit 10-14 Tag (e) |
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MSC750SMA170B4 | Hersteller : Microchip Technology | MOSFET SIC 1700 V 750 mOhm TO-247-4 |
Produkt ist nicht verfügbar |
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MSC750SMA170B4 | Hersteller : MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 5A; Idm: 12A; 68W Case: TO247-4 Mounting: THT Drain-source voltage: 1.7kV Drain current: 5A On-state resistance: 940mΩ Type of transistor: N-MOSFET Power dissipation: 68W Polarisation: unipolar Features of semiconductor devices: Kelvin terminal Gate charge: 11nC Technology: SiC Kind of channel: enhanced Pulsed drain current: 12A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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MSC750SMA170B4 | Hersteller : MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 5A; Idm: 12A; 68W Case: TO247-4 Mounting: THT Drain-source voltage: 1.7kV Drain current: 5A On-state resistance: 940mΩ Type of transistor: N-MOSFET Power dissipation: 68W Polarisation: unipolar Features of semiconductor devices: Kelvin terminal Gate charge: 11nC Technology: SiC Kind of channel: enhanced Pulsed drain current: 12A |
Produkt ist nicht verfügbar |