MSC100SM70JCU3 Microchip Technology
Hersteller: Microchip Technology
Description: SICFET N-CH 700V 124A SOT227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 124A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 40A, 20V
Power Dissipation (Max): 365W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 4mA
Supplier Device Package: SOT-227 (ISOTOP®)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 215 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 700 V
Description: SICFET N-CH 700V 124A SOT227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 124A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 40A, 20V
Power Dissipation (Max): 365W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 4mA
Supplier Device Package: SOT-227 (ISOTOP®)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 215 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 700 V
auf Bestellung 14 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1+ | 92.33 EUR |
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Technische Details MSC100SM70JCU3 Microchip Technology
Description: SICFET N-CH 700V 124A SOT227, Packaging: Tube, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 124A (Tc), Rds On (Max) @ Id, Vgs: 19mOhm @ 40A, 20V, Power Dissipation (Max): 365W (Tc), Vgs(th) (Max) @ Id: 2.4V @ 4mA, Supplier Device Package: SOT-227 (ISOTOP®), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 20V, Vgs (Max): +25V, -10V, Drain to Source Voltage (Vdss): 700 V, Gate Charge (Qg) (Max) @ Vgs: 215 nC @ 20 V, Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 700 V.
Weitere Produktangebote MSC100SM70JCU3 nach Preis ab 82.84 EUR bis 98.49 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||
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MSC100SM70JCU3 | Hersteller : Microchip Technology | Discrete Semiconductor Modules PM-MOSFET-SIC-SBD-SOT227 |
auf Bestellung 35 Stücke: Lieferzeit 269-273 Tag (e) |
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MSC100SM70JCU3 | Hersteller : Microchip Technology / Atmel | Discrete Semiconductor Modules PM-MOSFET-SIC-SBD-SOT227 |
auf Bestellung 12 Stücke: Lieferzeit 10-14 Tag (e) |
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MSC100SM70JCU3 | Hersteller : Microchip Technology | UNRLS CC0135 |
Produkt ist nicht verfügbar |
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MSC100SM70JCU3 | Hersteller : MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 700V; 98A; SOT227B; screw; Idm: 250A Type of module: MOSFET transistor Semiconductor structure: SiC diode/transistor Topology: buck chopper Case: SOT227B Electrical mounting: screw Power dissipation: 365W Technology: SiC Mechanical mounting: screw Drain-source voltage: 700V Pulsed drain current: 250A Drain current: 98A On-state resistance: 19mΩ Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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MSC100SM70JCU3 | Hersteller : MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 700V; 98A; SOT227B; screw; Idm: 250A Type of module: MOSFET transistor Semiconductor structure: SiC diode/transistor Topology: buck chopper Case: SOT227B Electrical mounting: screw Power dissipation: 365W Technology: SiC Mechanical mounting: screw Drain-source voltage: 700V Pulsed drain current: 250A Drain current: 98A On-state resistance: 19mΩ |
Produkt ist nicht verfügbar |