Produkte > MICROCHIP (MICROSEMI) > Alle Produkte des Herstellers MICROCHIP (MICROSEMI) (4150) > Seite 65 nach 70
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
||||||
|---|---|---|---|---|---|---|---|---|---|---|---|
| MSCSM120HM31CT3AG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 1.2kV; 71A; SP3F; Press-in PCB; 395W Case: SP3F Topology: H bridge + parrallel diodes; NTC thermistor Pulsed drain current: 180A Semiconductor structure: SiC diode/transistor Drain-source voltage: 1.2kV Drain current: 71A On-state resistance: 31mΩ Power dissipation: 395W Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: MOSFET transistor Technology: SiC Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||||||||
| MSCSM120HM50CT3AG | MICROCHIP (MICROSEMI) |
 Category: Transistor modules MOSFETDescription: Module; SiC diode/transistor; 1.2kV; 44A; SP3F; Press-in PCB; 245W Case: SP3F Topology: H bridge + parrallel diodes; NTC thermistor Pulsed drain current: 110A Semiconductor structure: SiC diode/transistor Drain-source voltage: 1.2kV Drain current: 44A On-state resistance: 50mΩ Power dissipation: 245W Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: MOSFET transistor Technology: SiC |
Produkt ist nicht verfügbar |
||||||||
| MSCSM120HM50CT3AG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 1.2kV; 44A; SP3F; Press-in PCB; 245W Case: SP3F Topology: H bridge + parrallel diodes; NTC thermistor Pulsed drain current: 110A Semiconductor structure: SiC diode/transistor Drain-source voltage: 1.2kV Drain current: 44A On-state resistance: 50mΩ Power dissipation: 245W Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: MOSFET transistor Technology: SiC Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||||||||
| MSCSM120SKM11CT3AG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 1.2kV; 202A; SP3F; Press-in PCB Case: SP3F Topology: buck chopper; NTC thermistor Pulsed drain current: 500A Semiconductor structure: SiC diode/transistor Drain-source voltage: 1.2kV Drain current: 202A On-state resistance: 10.4mΩ Power dissipation: 1067W Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: MOSFET transistor Technology: SiC |
Produkt ist nicht verfügbar |
||||||||
| MSCSM120SKM11CT3AG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 1.2kV; 202A; SP3F; Press-in PCB Case: SP3F Topology: buck chopper; NTC thermistor Pulsed drain current: 500A Semiconductor structure: SiC diode/transistor Drain-source voltage: 1.2kV Drain current: 202A On-state resistance: 10.4mΩ Power dissipation: 1067W Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: MOSFET transistor Technology: SiC Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||||||||
| MSCSM120TAM11CTPAG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 1.2kV; 200A; SP6P; Press-in PCB Case: SP6P Topology: MOSFET half-bridge x3 + parrallel diodes; NTC thermistor Pulsed drain current: 500A Semiconductor structure: SiC diode/transistor Drain-source voltage: 1.2kV Drain current: 200A On-state resistance: 10.4mΩ Power dissipation: 1042W Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: MOSFET transistor Technology: SiC |
Produkt ist nicht verfügbar |
||||||||
| MSCSM120TAM11CTPAG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 1.2kV; 200A; SP6P; Press-in PCB Case: SP6P Topology: MOSFET half-bridge x3 + parrallel diodes; NTC thermistor Pulsed drain current: 500A Semiconductor structure: SiC diode/transistor Drain-source voltage: 1.2kV Drain current: 200A On-state resistance: 10.4mΩ Power dissipation: 1042W Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: MOSFET transistor Technology: SiC Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||||||||
| MSCSM120TAM16CTPAG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 1.2kV; 136A; SP6P; Press-in PCB Power dissipation: 728W Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: MOSFET transistor Technology: SiC Topology: MOSFET half-bridge x3 + parrallel diodes; NTC thermistor Pulsed drain current: 350A Case: SP6P Semiconductor structure: SiC diode/transistor Drain-source voltage: 1.2kV Drain current: 136A On-state resistance: 16mΩ |
Produkt ist nicht verfügbar |
||||||||
| MSCSM120TAM16CTPAG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 1.2kV; 136A; SP6P; Press-in PCB Power dissipation: 728W Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: MOSFET transistor Technology: SiC Topology: MOSFET half-bridge x3 + parrallel diodes; NTC thermistor Pulsed drain current: 350A Case: SP6P Semiconductor structure: SiC diode/transistor Drain-source voltage: 1.2kV Drain current: 136A On-state resistance: 16mΩ Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||||||||
| MSCSM120TAM31CT3AG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 1.2kV; 71A; SP3F; Press-in PCB; 395W Case: SP3F Topology: MOSFET three-phase bridge; NTC thermistor Pulsed drain current: 180A Semiconductor structure: SiC diode/transistor Drain-source voltage: 1.2kV Drain current: 71A On-state resistance: 31mΩ Power dissipation: 395W Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: MOSFET transistor Technology: SiC |
Produkt ist nicht verfügbar |
||||||||
| MSCSM120TAM31CT3AG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 1.2kV; 71A; SP3F; Press-in PCB; 395W Case: SP3F Topology: MOSFET three-phase bridge; NTC thermistor Pulsed drain current: 180A Semiconductor structure: SiC diode/transistor Drain-source voltage: 1.2kV Drain current: 71A On-state resistance: 31mΩ Power dissipation: 395W Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: MOSFET transistor Technology: SiC Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||||||||
| MSCSM70AM025CD3AG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 700V; 538A; D3; SiC; screw Case: D3 Topology: MOSFET half-bridge Semiconductor structure: transistor/transistor Drain-source voltage: 700V Drain current: 538A On-state resistance: 2.5mΩ Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: MOSFET transistor Technology: SiC |
Produkt ist nicht verfügbar |
||||||||
| MSCSM70AM025CD3AG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 700V; 538A; D3; SiC; screw Case: D3 Topology: MOSFET half-bridge Semiconductor structure: transistor/transistor Drain-source voltage: 700V Drain current: 538A On-state resistance: 2.5mΩ Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: MOSFET transistor Technology: SiC Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||||||||
| MSCSM70AM025CT6AG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 700V; 538A; SP6C; SiC; screw Case: SP6C Topology: MOSFET half-bridge Semiconductor structure: SiC diode/transistor Drain-source voltage: 700V Drain current: 538A On-state resistance: 2.5mΩ Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: MOSFET transistor Technology: SiC |
Produkt ist nicht verfügbar |
||||||||
| MSCSM70AM025CT6AG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 700V; 538A; SP6C; SiC; screw Case: SP6C Topology: MOSFET half-bridge Semiconductor structure: SiC diode/transistor Drain-source voltage: 700V Drain current: 538A On-state resistance: 2.5mΩ Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: MOSFET transistor Technology: SiC Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||||||||
| MSCSM70AM07CT3AG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 700V; 281A; SP3F; Press-in PCB; 988W Case: SP3F Topology: MOSFET half-bridge + parrallel diodes; NTC thermistor Pulsed drain current: 700A Semiconductor structure: SiC diode/transistor Drain-source voltage: 700V Drain current: 281A On-state resistance: 6.4mΩ Power dissipation: 988W Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: MOSFET transistor Technology: SiC |
Produkt ist nicht verfügbar |
||||||||
| MSCSM70AM07CT3AG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 700V; 281A; SP3F; Press-in PCB; 988W Case: SP3F Topology: MOSFET half-bridge + parrallel diodes; NTC thermistor Pulsed drain current: 700A Semiconductor structure: SiC diode/transistor Drain-source voltage: 700V Drain current: 281A On-state resistance: 6.4mΩ Power dissipation: 988W Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: MOSFET transistor Technology: SiC Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||||||||
| MSCSM70AM10CT3AG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 700V; 192A; SP3F; Press-in PCB; 690W Case: SP3F Topology: MOSFET half-bridge + parrallel diodes; NTC thermistor Pulsed drain current: 482A Semiconductor structure: SiC diode/transistor Drain-source voltage: 700V Drain current: 192A On-state resistance: 9.5mΩ Power dissipation: 690W Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: MOSFET transistor Technology: SiC |
Produkt ist nicht verfügbar |
||||||||
| MSCSM70AM10CT3AG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 700V; 192A; SP3F; Press-in PCB; 690W Case: SP3F Topology: MOSFET half-bridge + parrallel diodes; NTC thermistor Pulsed drain current: 482A Semiconductor structure: SiC diode/transistor Drain-source voltage: 700V Drain current: 192A On-state resistance: 9.5mΩ Power dissipation: 690W Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: MOSFET transistor Technology: SiC Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||||||||
| MSCSM70AM19CT1AG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 700V; 98A; SP1F; Press-in PCB; 365W Case: SP1F Topology: MOSFET half-bridge + parrallel diodes; NTC thermistor Pulsed drain current: 250A Semiconductor structure: SiC diode/transistor Drain-source voltage: 700V Drain current: 98A On-state resistance: 19mΩ Power dissipation: 365W Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: MOSFET transistor Technology: SiC |
Produkt ist nicht verfügbar |
||||||||
| MSCSM70AM19CT1AG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 700V; 98A; SP1F; Press-in PCB; 365W Case: SP1F Topology: MOSFET half-bridge + parrallel diodes; NTC thermistor Pulsed drain current: 250A Semiconductor structure: SiC diode/transistor Drain-source voltage: 700V Drain current: 98A On-state resistance: 19mΩ Power dissipation: 365W Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: MOSFET transistor Technology: SiC Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||||||||
| MSCSM70HM19CT3AG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 700V; 98A; SP3F; Press-in PCB; 365W Case: SP3F Topology: MOSFET half-bridge + parrallel diodes; NTC thermistor Pulsed drain current: 250A Semiconductor structure: SiC diode/transistor Drain-source voltage: 700V Drain current: 98A On-state resistance: 19mΩ Power dissipation: 365W Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: MOSFET transistor Technology: SiC |
Produkt ist nicht verfügbar |
||||||||
| MSCSM70HM19CT3AG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 700V; 98A; SP3F; Press-in PCB; 365W Case: SP3F Topology: MOSFET half-bridge + parrallel diodes; NTC thermistor Pulsed drain current: 250A Semiconductor structure: SiC diode/transistor Drain-source voltage: 700V Drain current: 98A On-state resistance: 19mΩ Power dissipation: 365W Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: MOSFET transistor Technology: SiC Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||||||||
| MSCSM70TAM05TPAG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 700V; 278A; SP6P; Press-in PCB; 966W Semiconductor structure: SiC diode/transistor Case: SP6P Technology: SiC Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: MOSFET transistor Drain current: 278A Topology: MOSFET x3 half-bridge; NTC thermistor Pulsed drain current: 700A Power dissipation: 966W Drain-source voltage: 700V On-state resistance: 6.4mΩ |
Produkt ist nicht verfügbar |
||||||||
| MSCSM70TAM05TPAG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 700V; 278A; SP6P; Press-in PCB; 966W Semiconductor structure: SiC diode/transistor Case: SP6P Technology: SiC Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: MOSFET transistor Drain current: 278A Topology: MOSFET x3 half-bridge; NTC thermistor Pulsed drain current: 700A Power dissipation: 966W Drain-source voltage: 700V On-state resistance: 6.4mΩ Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||||||||
| MSCSM70TAM10CTPAG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 700V; 189A; SP6P; Press-in PCB; 674W Case: SP6P Topology: MOSFET half-bridge x3 + parrallel diodes; NTC thermistor Pulsed drain current: 476A Semiconductor structure: SiC diode/transistor Drain-source voltage: 700V Drain current: 189A On-state resistance: 9.5mΩ Power dissipation: 674W Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: MOSFET transistor Technology: SiC |
Produkt ist nicht verfügbar |
||||||||
| MSCSM70TAM10CTPAG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 700V; 189A; SP6P; Press-in PCB; 674W Case: SP6P Topology: MOSFET half-bridge x3 + parrallel diodes; NTC thermistor Pulsed drain current: 476A Semiconductor structure: SiC diode/transistor Drain-source voltage: 700V Drain current: 189A On-state resistance: 9.5mΩ Power dissipation: 674W Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: MOSFET transistor Technology: SiC Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||||||||
| MSCSM70TAM19CT3AG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 700V; 98A; SP3F; Press-in PCB; 365W Case: SP3F Topology: MOSFET three-phase bridge; NTC thermistor Pulsed drain current: 250A Semiconductor structure: SiC diode/transistor Drain-source voltage: 700V Drain current: 98A On-state resistance: 19mΩ Power dissipation: 365W Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: MOSFET transistor Technology: SiC |
Produkt ist nicht verfügbar |
||||||||
| MSCSM70TAM19CT3AG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 700V; 98A; SP3F; Press-in PCB; 365W Case: SP3F Topology: MOSFET three-phase bridge; NTC thermistor Pulsed drain current: 250A Semiconductor structure: SiC diode/transistor Drain-source voltage: 700V Drain current: 98A On-state resistance: 19mΩ Power dissipation: 365W Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: MOSFET transistor Technology: SiC Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||||||||
| MSCSM70VM10C4AG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/tiristor/transistor; 700V; 189A; SP4; Idm: 476A Case: SP4 Topology: Vienna Rectifier Pulsed drain current: 476A Semiconductor structure: SiC diode/tiristor/transistor Drain-source voltage: 700V Drain current: 189A On-state resistance: 9.5mΩ Power dissipation: 674W Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: MOSFET transistor Technology: SiC |
Produkt ist nicht verfügbar |
||||||||
| MSCSM70VM10C4AG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/tiristor/transistor; 700V; 189A; SP4; Idm: 476A Case: SP4 Topology: Vienna Rectifier Pulsed drain current: 476A Semiconductor structure: SiC diode/tiristor/transistor Drain-source voltage: 700V Drain current: 189A On-state resistance: 9.5mΩ Power dissipation: 674W Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: MOSFET transistor Technology: SiC Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||||||||
| MSCSM70VM19C3AG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/tiristor/transistor; 700V; 98A; SP3F; Idm: 250A Case: SP3F Topology: Vienna Rectifier Pulsed drain current: 250A Semiconductor structure: SiC diode/tiristor/transistor Drain-source voltage: 700V Drain current: 98A On-state resistance: 19mΩ Power dissipation: 365W Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: MOSFET transistor Technology: SiC |
Produkt ist nicht verfügbar |
||||||||
| MSCSM70VM19C3AG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/tiristor/transistor; 700V; 98A; SP3F; Idm: 250A Case: SP3F Topology: Vienna Rectifier Pulsed drain current: 250A Semiconductor structure: SiC diode/tiristor/transistor Drain-source voltage: 700V Drain current: 98A On-state resistance: 19mΩ Power dissipation: 365W Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: MOSFET transistor Technology: SiC Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||||||||
 |
MSMBG51CA | MICROCHIP (MICROSEMI) |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 600W; 56.7V; 7.3A; bidirectional; ±5%; DO215AA Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 51V Breakdown voltage: 56.7V Max. forward impulse current: 7.3A Semiconductor structure: bidirectional Tolerance: ±5% Case: DO215AA Mounting: SMD Leakage current: 1µA |
auf Bestellung 32 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||
|
|
MSMBG51CA | MICROCHIP (MICROSEMI) |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 600W; 56.7V; 7.3A; bidirectional; ±5%; DO215AA Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 51V Breakdown voltage: 56.7V Max. forward impulse current: 7.3A Semiconductor structure: bidirectional Tolerance: ±5% Case: DO215AA Mounting: SMD Leakage current: 1µA Anzahl je Verpackung: 1 Stücke |
auf Bestellung 32 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||
 |
MSMBJ12CA | MICROCHIP (MICROSEMI) |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 600W; 14V; 30.2A; bidirectional; ±5%; DO214AA Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 12V Breakdown voltage: 14V Max. forward impulse current: 30.2A Semiconductor structure: bidirectional Tolerance: ±5% Case: DO214AA Mounting: SMD Leakage current: 5µA |
Produkt ist nicht verfügbar |
|||||||
|
|
MSMBJ12CA | MICROCHIP (MICROSEMI) |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 600W; 14V; 30.2A; bidirectional; ±5%; DO214AA Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 12V Breakdown voltage: 14V Max. forward impulse current: 30.2A Semiconductor structure: bidirectional Tolerance: ±5% Case: DO214AA Mounting: SMD Leakage current: 5µA Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
|||||||
|
|
MSMBJ15A | MICROCHIP (MICROSEMI) |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 600W; 17.6V; 24A; unidirectional; ±5%; DO214AA Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 15V Breakdown voltage: 17.6V Max. forward impulse current: 24A Semiconductor structure: unidirectional Tolerance: ±5% Case: DO214AA Mounting: SMD Leakage current: 1µA |
auf Bestellung 29 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||
|
|
MSMBJ15A | MICROCHIP (MICROSEMI) |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 600W; 17.6V; 24A; unidirectional; ±5%; DO214AA Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 15V Breakdown voltage: 17.6V Max. forward impulse current: 24A Semiconductor structure: unidirectional Tolerance: ±5% Case: DO214AA Mounting: SMD Leakage current: 1µA Anzahl je Verpackung: 1 Stücke |
auf Bestellung 29 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||
|
|
MSMBJ45CA | MICROCHIP (MICROSEMI) |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 600W; 52.65V; 8.3A; bidirectional; ±5%; DO214AA Type of diode: TVS Mounting: SMD Tolerance: ±5% Case: DO214AA Semiconductor structure: bidirectional Leakage current: 1µA Max. forward impulse current: 8.3A Peak pulse power dissipation: 0.6kW Max. off-state voltage: 45V Breakdown voltage: 52.65V |
Produkt ist nicht verfügbar |
|||||||
|
|
MSMBJ45CA | MICROCHIP (MICROSEMI) |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 600W; 52.65V; 8.3A; bidirectional; ±5%; DO214AA Type of diode: TVS Mounting: SMD Tolerance: ±5% Case: DO214AA Semiconductor structure: bidirectional Leakage current: 1µA Max. forward impulse current: 8.3A Peak pulse power dissipation: 0.6kW Max. off-state voltage: 45V Breakdown voltage: 52.65V Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
|||||||
|
|
MSMBJ48A | MICROCHIP (MICROSEMI) |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 600W; 56.1V; 7.7A; unidirectional; ±5%; DO214AA Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 48V Breakdown voltage: 56.1V Max. forward impulse current: 7.7A Semiconductor structure: unidirectional Tolerance: ±5% Case: DO214AA Mounting: SMD Leakage current: 1µA |
auf Bestellung 3 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||
|
|
MSMBJ48A | MICROCHIP (MICROSEMI) |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 600W; 56.1V; 7.7A; unidirectional; ±5%; DO214AA Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 48V Breakdown voltage: 56.1V Max. forward impulse current: 7.7A Semiconductor structure: unidirectional Tolerance: ±5% Case: DO214AA Mounting: SMD Leakage current: 1µA Anzahl je Verpackung: 1 Stücke |
auf Bestellung 3 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||
|
|
MSMBJ51A | MICROCHIP (MICROSEMI) |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 600W; 59.7V; 7.3A; unidirectional; ±5%; DO214AA Type of diode: TVS Mounting: SMD Tolerance: ±5% Case: DO214AA Semiconductor structure: unidirectional Leakage current: 1µA Max. forward impulse current: 7.3A Peak pulse power dissipation: 0.6kW Max. off-state voltage: 51V Breakdown voltage: 59.7V |
Produkt ist nicht verfügbar |
|||||||
|
|
MSMBJ51A | MICROCHIP (MICROSEMI) |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 600W; 59.7V; 7.3A; unidirectional; ±5%; DO214AA Type of diode: TVS Mounting: SMD Tolerance: ±5% Case: DO214AA Semiconductor structure: unidirectional Leakage current: 1µA Max. forward impulse current: 7.3A Peak pulse power dissipation: 0.6kW Max. off-state voltage: 51V Breakdown voltage: 59.7V Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
|||||||
|
|
MSMBJ6.0CAE3 | MICROCHIP (MICROSEMI) |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 600W; 7V; 58.3A; bidirectional; ±5%; DO214AA Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 6V Breakdown voltage: 7V Max. forward impulse current: 58.3A Semiconductor structure: bidirectional Tolerance: ±5% Case: DO214AA Mounting: SMD Leakage current: 0.8mA |
Produkt ist nicht verfügbar |
|||||||
|
|
MSMBJ6.0CAE3 | MICROCHIP (MICROSEMI) |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 600W; 7V; 58.3A; bidirectional; ±5%; DO214AA Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 6V Breakdown voltage: 7V Max. forward impulse current: 58.3A Semiconductor structure: bidirectional Tolerance: ±5% Case: DO214AA Mounting: SMD Leakage current: 0.8mA Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
|||||||
|
|
MSMBJ8.5CA | MICROCHIP (MICROSEMI) |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 600W; 9.9V; 41.7A; bidirectional; ±5%; DO214AA Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 8.5V Breakdown voltage: 9.9V Max. forward impulse current: 41.7A Semiconductor structure: bidirectional Tolerance: ±5% Case: DO214AA Mounting: SMD Leakage current: 10µA |
Produkt ist nicht verfügbar |
|||||||
|
|
MSMBJ8.5CA | MICROCHIP (MICROSEMI) |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 600W; 9.9V; 41.7A; bidirectional; ±5%; DO214AA Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 8.5V Breakdown voltage: 9.9V Max. forward impulse current: 41.7A Semiconductor structure: bidirectional Tolerance: ±5% Case: DO214AA Mounting: SMD Leakage current: 10µA Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
|||||||
|
|
MSMBJ9.0A | MICROCHIP (MICROSEMI) |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 600W; 10.6V; 39A; unidirectional; ±5%; DO214AA Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 9V Breakdown voltage: 10.6V Max. forward impulse current: 39A Semiconductor structure: unidirectional Tolerance: ±5% Case: DO214AA Mounting: SMD Leakage current: 5µA |
Produkt ist nicht verfügbar |
|||||||
|
|
MSMBJ9.0A | MICROCHIP (MICROSEMI) |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 600W; 10.6V; 39A; unidirectional; ±5%; DO214AA Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 9V Breakdown voltage: 10.6V Max. forward impulse current: 39A Semiconductor structure: unidirectional Tolerance: ±5% Case: DO214AA Mounting: SMD Leakage current: 5µA Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
|||||||
| MSMCGLCE18A | MICROCHIP (MICROSEMI) |
MSMCGLCE18A Unidirectional SMD transil diodes |
Produkt ist nicht verfügbar |
||||||||
 |
MSMCJ17CA | MICROCHIP (MICROSEMI) |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 1.5kW; 19.9V; 53.3A; bidirectional; ±5%; DO214AB Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 17V Breakdown voltage: 19.9V Max. forward impulse current: 53.3A Semiconductor structure: bidirectional Tolerance: ±5% Case: DO214AB Mounting: SMD Leakage current: 1µA |
Produkt ist nicht verfügbar |
|||||||
|
|
MSMCJ17CA | MICROCHIP (MICROSEMI) |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 1.5kW; 19.9V; 53.3A; bidirectional; ±5%; DO214AB Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 17V Breakdown voltage: 19.9V Max. forward impulse current: 53.3A Semiconductor structure: bidirectional Tolerance: ±5% Case: DO214AB Mounting: SMD Leakage current: 1µA Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
|||||||
|
|
MSMCJ45CA | MICROCHIP (MICROSEMI) |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 1.5kW; 52.6V; 20.6A; bidirectional; ±5%; DO214AB Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 45V Breakdown voltage: 52.6V Max. forward impulse current: 20.6A Semiconductor structure: bidirectional Tolerance: ±5% Case: DO214AB Mounting: SMD Leakage current: 1µA |
Produkt ist nicht verfügbar |
|||||||
|
|
MSMCJ45CA | MICROCHIP (MICROSEMI) |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 1.5kW; 52.6V; 20.6A; bidirectional; ±5%; DO214AB Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 45V Breakdown voltage: 52.6V Max. forward impulse current: 20.6A Semiconductor structure: bidirectional Tolerance: ±5% Case: DO214AB Mounting: SMD Leakage current: 1µA Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
|||||||
| MSMCJ8.0CA | MICROCHIP (MICROSEMI) |
MSMCJ8.0CA Bidirectional SMD transil diodes |
Produkt ist nicht verfügbar |
||||||||
| MSMLJ100CA | MICROCHIP (MICROSEMI) |
MSMLJ100CA Bidirectional SMD transil diodes |
Produkt ist nicht verfügbar |
||||||||
|
|
MSMLJ12CAe3 | MICROCHIP (MICROSEMI) |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 3kW; 14V; 150.6A; bidirectional; ±5%; DO214AB Type of diode: TVS Peak pulse power dissipation: 3kW Max. off-state voltage: 12V Breakdown voltage: 14V Max. forward impulse current: 150.6A Semiconductor structure: bidirectional Tolerance: ±5% Case: DO214AB Mounting: SMD Leakage current: 5µA |
Produkt ist nicht verfügbar |
|||||||
|
|
MSMLJ12CAe3 | MICROCHIP (MICROSEMI) |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 3kW; 14V; 150.6A; bidirectional; ±5%; DO214AB Type of diode: TVS Peak pulse power dissipation: 3kW Max. off-state voltage: 12V Breakdown voltage: 14V Max. forward impulse current: 150.6A Semiconductor structure: bidirectional Tolerance: ±5% Case: DO214AB Mounting: SMD Leakage current: 5µA Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
| MSCSM120HM31CT3AG |
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 71A; SP3F; Press-in PCB; 395W
Case: SP3F
Topology: H bridge + parrallel diodes; NTC thermistor
Pulsed drain current: 180A
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 71A
On-state resistance: 31mΩ
Power dissipation: 395W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 71A; SP3F; Press-in PCB; 395W
Case: SP3F
Topology: H bridge + parrallel diodes; NTC thermistor
Pulsed drain current: 180A
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 71A
On-state resistance: 31mΩ
Power dissipation: 395W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| MSCSM120HM50CT3AG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 44A; SP3F; Press-in PCB; 245W
Case: SP3F
Topology: H bridge + parrallel diodes; NTC thermistor
Pulsed drain current: 110A
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 44A
On-state resistance: 50mΩ
Power dissipation: 245W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 44A; SP3F; Press-in PCB; 245W
Case: SP3F
Topology: H bridge + parrallel diodes; NTC thermistor
Pulsed drain current: 110A
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 44A
On-state resistance: 50mΩ
Power dissipation: 245W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Produkt ist nicht verfügbar
| MSCSM120HM50CT3AG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 44A; SP3F; Press-in PCB; 245W
Case: SP3F
Topology: H bridge + parrallel diodes; NTC thermistor
Pulsed drain current: 110A
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 44A
On-state resistance: 50mΩ
Power dissipation: 245W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 44A; SP3F; Press-in PCB; 245W
Case: SP3F
Topology: H bridge + parrallel diodes; NTC thermistor
Pulsed drain current: 110A
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 44A
On-state resistance: 50mΩ
Power dissipation: 245W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| MSCSM120SKM11CT3AG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 202A; SP3F; Press-in PCB
Case: SP3F
Topology: buck chopper; NTC thermistor
Pulsed drain current: 500A
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 202A
On-state resistance: 10.4mΩ
Power dissipation: 1067W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 202A; SP3F; Press-in PCB
Case: SP3F
Topology: buck chopper; NTC thermistor
Pulsed drain current: 500A
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 202A
On-state resistance: 10.4mΩ
Power dissipation: 1067W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Produkt ist nicht verfügbar
| MSCSM120SKM11CT3AG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 202A; SP3F; Press-in PCB
Case: SP3F
Topology: buck chopper; NTC thermistor
Pulsed drain current: 500A
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 202A
On-state resistance: 10.4mΩ
Power dissipation: 1067W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 202A; SP3F; Press-in PCB
Case: SP3F
Topology: buck chopper; NTC thermistor
Pulsed drain current: 500A
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 202A
On-state resistance: 10.4mΩ
Power dissipation: 1067W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| MSCSM120TAM11CTPAG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 200A; SP6P; Press-in PCB
Case: SP6P
Topology: MOSFET half-bridge x3 + parrallel diodes; NTC thermistor
Pulsed drain current: 500A
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 200A
On-state resistance: 10.4mΩ
Power dissipation: 1042W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 200A; SP6P; Press-in PCB
Case: SP6P
Topology: MOSFET half-bridge x3 + parrallel diodes; NTC thermistor
Pulsed drain current: 500A
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 200A
On-state resistance: 10.4mΩ
Power dissipation: 1042W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Produkt ist nicht verfügbar
| MSCSM120TAM11CTPAG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 200A; SP6P; Press-in PCB
Case: SP6P
Topology: MOSFET half-bridge x3 + parrallel diodes; NTC thermistor
Pulsed drain current: 500A
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 200A
On-state resistance: 10.4mΩ
Power dissipation: 1042W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 200A; SP6P; Press-in PCB
Case: SP6P
Topology: MOSFET half-bridge x3 + parrallel diodes; NTC thermistor
Pulsed drain current: 500A
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 200A
On-state resistance: 10.4mΩ
Power dissipation: 1042W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| MSCSM120TAM16CTPAG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 136A; SP6P; Press-in PCB
Power dissipation: 728W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Topology: MOSFET half-bridge x3 + parrallel diodes; NTC thermistor
Pulsed drain current: 350A
Case: SP6P
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 136A
On-state resistance: 16mΩ
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 136A; SP6P; Press-in PCB
Power dissipation: 728W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Topology: MOSFET half-bridge x3 + parrallel diodes; NTC thermistor
Pulsed drain current: 350A
Case: SP6P
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 136A
On-state resistance: 16mΩ
Produkt ist nicht verfügbar
| MSCSM120TAM16CTPAG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 136A; SP6P; Press-in PCB
Power dissipation: 728W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Topology: MOSFET half-bridge x3 + parrallel diodes; NTC thermistor
Pulsed drain current: 350A
Case: SP6P
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 136A
On-state resistance: 16mΩ
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 136A; SP6P; Press-in PCB
Power dissipation: 728W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Topology: MOSFET half-bridge x3 + parrallel diodes; NTC thermistor
Pulsed drain current: 350A
Case: SP6P
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 136A
On-state resistance: 16mΩ
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| MSCSM120TAM31CT3AG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 71A; SP3F; Press-in PCB; 395W
Case: SP3F
Topology: MOSFET three-phase bridge; NTC thermistor
Pulsed drain current: 180A
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 71A
On-state resistance: 31mΩ
Power dissipation: 395W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 71A; SP3F; Press-in PCB; 395W
Case: SP3F
Topology: MOSFET three-phase bridge; NTC thermistor
Pulsed drain current: 180A
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 71A
On-state resistance: 31mΩ
Power dissipation: 395W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Produkt ist nicht verfügbar
| MSCSM120TAM31CT3AG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 71A; SP3F; Press-in PCB; 395W
Case: SP3F
Topology: MOSFET three-phase bridge; NTC thermistor
Pulsed drain current: 180A
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 71A
On-state resistance: 31mΩ
Power dissipation: 395W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 71A; SP3F; Press-in PCB; 395W
Case: SP3F
Topology: MOSFET three-phase bridge; NTC thermistor
Pulsed drain current: 180A
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 71A
On-state resistance: 31mΩ
Power dissipation: 395W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| MSCSM70AM025CD3AG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 700V; 538A; D3; SiC; screw
Case: D3
Topology: MOSFET half-bridge
Semiconductor structure: transistor/transistor
Drain-source voltage: 700V
Drain current: 538A
On-state resistance: 2.5mΩ
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 700V; 538A; D3; SiC; screw
Case: D3
Topology: MOSFET half-bridge
Semiconductor structure: transistor/transistor
Drain-source voltage: 700V
Drain current: 538A
On-state resistance: 2.5mΩ
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Produkt ist nicht verfügbar
| MSCSM70AM025CD3AG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 700V; 538A; D3; SiC; screw
Case: D3
Topology: MOSFET half-bridge
Semiconductor structure: transistor/transistor
Drain-source voltage: 700V
Drain current: 538A
On-state resistance: 2.5mΩ
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 700V; 538A; D3; SiC; screw
Case: D3
Topology: MOSFET half-bridge
Semiconductor structure: transistor/transistor
Drain-source voltage: 700V
Drain current: 538A
On-state resistance: 2.5mΩ
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| MSCSM70AM025CT6AG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 700V; 538A; SP6C; SiC; screw
Case: SP6C
Topology: MOSFET half-bridge
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 700V
Drain current: 538A
On-state resistance: 2.5mΩ
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 700V; 538A; SP6C; SiC; screw
Case: SP6C
Topology: MOSFET half-bridge
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 700V
Drain current: 538A
On-state resistance: 2.5mΩ
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Produkt ist nicht verfügbar
| MSCSM70AM025CT6AG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 700V; 538A; SP6C; SiC; screw
Case: SP6C
Topology: MOSFET half-bridge
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 700V
Drain current: 538A
On-state resistance: 2.5mΩ
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 700V; 538A; SP6C; SiC; screw
Case: SP6C
Topology: MOSFET half-bridge
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 700V
Drain current: 538A
On-state resistance: 2.5mΩ
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| MSCSM70AM07CT3AG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 700V; 281A; SP3F; Press-in PCB; 988W
Case: SP3F
Topology: MOSFET half-bridge + parrallel diodes; NTC thermistor
Pulsed drain current: 700A
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 700V
Drain current: 281A
On-state resistance: 6.4mΩ
Power dissipation: 988W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 700V; 281A; SP3F; Press-in PCB; 988W
Case: SP3F
Topology: MOSFET half-bridge + parrallel diodes; NTC thermistor
Pulsed drain current: 700A
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 700V
Drain current: 281A
On-state resistance: 6.4mΩ
Power dissipation: 988W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Produkt ist nicht verfügbar
| MSCSM70AM07CT3AG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 700V; 281A; SP3F; Press-in PCB; 988W
Case: SP3F
Topology: MOSFET half-bridge + parrallel diodes; NTC thermistor
Pulsed drain current: 700A
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 700V
Drain current: 281A
On-state resistance: 6.4mΩ
Power dissipation: 988W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 700V; 281A; SP3F; Press-in PCB; 988W
Case: SP3F
Topology: MOSFET half-bridge + parrallel diodes; NTC thermistor
Pulsed drain current: 700A
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 700V
Drain current: 281A
On-state resistance: 6.4mΩ
Power dissipation: 988W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| MSCSM70AM10CT3AG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 700V; 192A; SP3F; Press-in PCB; 690W
Case: SP3F
Topology: MOSFET half-bridge + parrallel diodes; NTC thermistor
Pulsed drain current: 482A
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 700V
Drain current: 192A
On-state resistance: 9.5mΩ
Power dissipation: 690W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 700V; 192A; SP3F; Press-in PCB; 690W
Case: SP3F
Topology: MOSFET half-bridge + parrallel diodes; NTC thermistor
Pulsed drain current: 482A
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 700V
Drain current: 192A
On-state resistance: 9.5mΩ
Power dissipation: 690W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Produkt ist nicht verfügbar
| MSCSM70AM10CT3AG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 700V; 192A; SP3F; Press-in PCB; 690W
Case: SP3F
Topology: MOSFET half-bridge + parrallel diodes; NTC thermistor
Pulsed drain current: 482A
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 700V
Drain current: 192A
On-state resistance: 9.5mΩ
Power dissipation: 690W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 700V; 192A; SP3F; Press-in PCB; 690W
Case: SP3F
Topology: MOSFET half-bridge + parrallel diodes; NTC thermistor
Pulsed drain current: 482A
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 700V
Drain current: 192A
On-state resistance: 9.5mΩ
Power dissipation: 690W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| MSCSM70AM19CT1AG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 700V; 98A; SP1F; Press-in PCB; 365W
Case: SP1F
Topology: MOSFET half-bridge + parrallel diodes; NTC thermistor
Pulsed drain current: 250A
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 700V
Drain current: 98A
On-state resistance: 19mΩ
Power dissipation: 365W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 700V; 98A; SP1F; Press-in PCB; 365W
Case: SP1F
Topology: MOSFET half-bridge + parrallel diodes; NTC thermistor
Pulsed drain current: 250A
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 700V
Drain current: 98A
On-state resistance: 19mΩ
Power dissipation: 365W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Produkt ist nicht verfügbar
| MSCSM70AM19CT1AG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 700V; 98A; SP1F; Press-in PCB; 365W
Case: SP1F
Topology: MOSFET half-bridge + parrallel diodes; NTC thermistor
Pulsed drain current: 250A
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 700V
Drain current: 98A
On-state resistance: 19mΩ
Power dissipation: 365W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 700V; 98A; SP1F; Press-in PCB; 365W
Case: SP1F
Topology: MOSFET half-bridge + parrallel diodes; NTC thermistor
Pulsed drain current: 250A
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 700V
Drain current: 98A
On-state resistance: 19mΩ
Power dissipation: 365W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| MSCSM70HM19CT3AG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 700V; 98A; SP3F; Press-in PCB; 365W
Case: SP3F
Topology: MOSFET half-bridge + parrallel diodes; NTC thermistor
Pulsed drain current: 250A
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 700V
Drain current: 98A
On-state resistance: 19mΩ
Power dissipation: 365W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 700V; 98A; SP3F; Press-in PCB; 365W
Case: SP3F
Topology: MOSFET half-bridge + parrallel diodes; NTC thermistor
Pulsed drain current: 250A
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 700V
Drain current: 98A
On-state resistance: 19mΩ
Power dissipation: 365W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Produkt ist nicht verfügbar
| MSCSM70HM19CT3AG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 700V; 98A; SP3F; Press-in PCB; 365W
Case: SP3F
Topology: MOSFET half-bridge + parrallel diodes; NTC thermistor
Pulsed drain current: 250A
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 700V
Drain current: 98A
On-state resistance: 19mΩ
Power dissipation: 365W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 700V; 98A; SP3F; Press-in PCB; 365W
Case: SP3F
Topology: MOSFET half-bridge + parrallel diodes; NTC thermistor
Pulsed drain current: 250A
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 700V
Drain current: 98A
On-state resistance: 19mΩ
Power dissipation: 365W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| MSCSM70TAM05TPAG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 700V; 278A; SP6P; Press-in PCB; 966W
Semiconductor structure: SiC diode/transistor
Case: SP6P
Technology: SiC
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Drain current: 278A
Topology: MOSFET x3 half-bridge; NTC thermistor
Pulsed drain current: 700A
Power dissipation: 966W
Drain-source voltage: 700V
On-state resistance: 6.4mΩ
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 700V; 278A; SP6P; Press-in PCB; 966W
Semiconductor structure: SiC diode/transistor
Case: SP6P
Technology: SiC
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Drain current: 278A
Topology: MOSFET x3 half-bridge; NTC thermistor
Pulsed drain current: 700A
Power dissipation: 966W
Drain-source voltage: 700V
On-state resistance: 6.4mΩ
Produkt ist nicht verfügbar
| MSCSM70TAM05TPAG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 700V; 278A; SP6P; Press-in PCB; 966W
Semiconductor structure: SiC diode/transistor
Case: SP6P
Technology: SiC
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Drain current: 278A
Topology: MOSFET x3 half-bridge; NTC thermistor
Pulsed drain current: 700A
Power dissipation: 966W
Drain-source voltage: 700V
On-state resistance: 6.4mΩ
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 700V; 278A; SP6P; Press-in PCB; 966W
Semiconductor structure: SiC diode/transistor
Case: SP6P
Technology: SiC
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Drain current: 278A
Topology: MOSFET x3 half-bridge; NTC thermistor
Pulsed drain current: 700A
Power dissipation: 966W
Drain-source voltage: 700V
On-state resistance: 6.4mΩ
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| MSCSM70TAM10CTPAG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 700V; 189A; SP6P; Press-in PCB; 674W
Case: SP6P
Topology: MOSFET half-bridge x3 + parrallel diodes; NTC thermistor
Pulsed drain current: 476A
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 700V
Drain current: 189A
On-state resistance: 9.5mΩ
Power dissipation: 674W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 700V; 189A; SP6P; Press-in PCB; 674W
Case: SP6P
Topology: MOSFET half-bridge x3 + parrallel diodes; NTC thermistor
Pulsed drain current: 476A
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 700V
Drain current: 189A
On-state resistance: 9.5mΩ
Power dissipation: 674W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Produkt ist nicht verfügbar
| MSCSM70TAM10CTPAG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 700V; 189A; SP6P; Press-in PCB; 674W
Case: SP6P
Topology: MOSFET half-bridge x3 + parrallel diodes; NTC thermistor
Pulsed drain current: 476A
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 700V
Drain current: 189A
On-state resistance: 9.5mΩ
Power dissipation: 674W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 700V; 189A; SP6P; Press-in PCB; 674W
Case: SP6P
Topology: MOSFET half-bridge x3 + parrallel diodes; NTC thermistor
Pulsed drain current: 476A
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 700V
Drain current: 189A
On-state resistance: 9.5mΩ
Power dissipation: 674W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| MSCSM70TAM19CT3AG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 700V; 98A; SP3F; Press-in PCB; 365W
Case: SP3F
Topology: MOSFET three-phase bridge; NTC thermistor
Pulsed drain current: 250A
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 700V
Drain current: 98A
On-state resistance: 19mΩ
Power dissipation: 365W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 700V; 98A; SP3F; Press-in PCB; 365W
Case: SP3F
Topology: MOSFET three-phase bridge; NTC thermistor
Pulsed drain current: 250A
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 700V
Drain current: 98A
On-state resistance: 19mΩ
Power dissipation: 365W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Produkt ist nicht verfügbar
| MSCSM70TAM19CT3AG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 700V; 98A; SP3F; Press-in PCB; 365W
Case: SP3F
Topology: MOSFET three-phase bridge; NTC thermistor
Pulsed drain current: 250A
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 700V
Drain current: 98A
On-state resistance: 19mΩ
Power dissipation: 365W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 700V; 98A; SP3F; Press-in PCB; 365W
Case: SP3F
Topology: MOSFET three-phase bridge; NTC thermistor
Pulsed drain current: 250A
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 700V
Drain current: 98A
On-state resistance: 19mΩ
Power dissipation: 365W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| MSCSM70VM10C4AG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/tiristor/transistor; 700V; 189A; SP4; Idm: 476A
Case: SP4
Topology: Vienna Rectifier
Pulsed drain current: 476A
Semiconductor structure: SiC diode/tiristor/transistor
Drain-source voltage: 700V
Drain current: 189A
On-state resistance: 9.5mΩ
Power dissipation: 674W
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Category: Transistor modules MOSFET
Description: Module; SiC diode/tiristor/transistor; 700V; 189A; SP4; Idm: 476A
Case: SP4
Topology: Vienna Rectifier
Pulsed drain current: 476A
Semiconductor structure: SiC diode/tiristor/transistor
Drain-source voltage: 700V
Drain current: 189A
On-state resistance: 9.5mΩ
Power dissipation: 674W
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Produkt ist nicht verfügbar
| MSCSM70VM10C4AG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/tiristor/transistor; 700V; 189A; SP4; Idm: 476A
Case: SP4
Topology: Vienna Rectifier
Pulsed drain current: 476A
Semiconductor structure: SiC diode/tiristor/transistor
Drain-source voltage: 700V
Drain current: 189A
On-state resistance: 9.5mΩ
Power dissipation: 674W
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; SiC diode/tiristor/transistor; 700V; 189A; SP4; Idm: 476A
Case: SP4
Topology: Vienna Rectifier
Pulsed drain current: 476A
Semiconductor structure: SiC diode/tiristor/transistor
Drain-source voltage: 700V
Drain current: 189A
On-state resistance: 9.5mΩ
Power dissipation: 674W
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| MSCSM70VM19C3AG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/tiristor/transistor; 700V; 98A; SP3F; Idm: 250A
Case: SP3F
Topology: Vienna Rectifier
Pulsed drain current: 250A
Semiconductor structure: SiC diode/tiristor/transistor
Drain-source voltage: 700V
Drain current: 98A
On-state resistance: 19mΩ
Power dissipation: 365W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Category: Transistor modules MOSFET
Description: Module; SiC diode/tiristor/transistor; 700V; 98A; SP3F; Idm: 250A
Case: SP3F
Topology: Vienna Rectifier
Pulsed drain current: 250A
Semiconductor structure: SiC diode/tiristor/transistor
Drain-source voltage: 700V
Drain current: 98A
On-state resistance: 19mΩ
Power dissipation: 365W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Produkt ist nicht verfügbar
| MSCSM70VM19C3AG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/tiristor/transistor; 700V; 98A; SP3F; Idm: 250A
Case: SP3F
Topology: Vienna Rectifier
Pulsed drain current: 250A
Semiconductor structure: SiC diode/tiristor/transistor
Drain-source voltage: 700V
Drain current: 98A
On-state resistance: 19mΩ
Power dissipation: 365W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; SiC diode/tiristor/transistor; 700V; 98A; SP3F; Idm: 250A
Case: SP3F
Topology: Vienna Rectifier
Pulsed drain current: 250A
Semiconductor structure: SiC diode/tiristor/transistor
Drain-source voltage: 700V
Drain current: 98A
On-state resistance: 19mΩ
Power dissipation: 365W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| MSMBG51CA |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 56.7V; 7.3A; bidirectional; ±5%; DO215AA
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 51V
Breakdown voltage: 56.7V
Max. forward impulse current: 7.3A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO215AA
Mounting: SMD
Leakage current: 1µA
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 56.7V; 7.3A; bidirectional; ±5%; DO215AA
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 51V
Breakdown voltage: 56.7V
Max. forward impulse current: 7.3A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO215AA
Mounting: SMD
Leakage current: 1µA
auf Bestellung 32 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 32+ | 2.23 EUR |
| MSMBG51CA |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 56.7V; 7.3A; bidirectional; ±5%; DO215AA
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 51V
Breakdown voltage: 56.7V
Max. forward impulse current: 7.3A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO215AA
Mounting: SMD
Leakage current: 1µA
Anzahl je Verpackung: 1 Stücke
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 56.7V; 7.3A; bidirectional; ±5%; DO215AA
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 51V
Breakdown voltage: 56.7V
Max. forward impulse current: 7.3A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO215AA
Mounting: SMD
Leakage current: 1µA
Anzahl je Verpackung: 1 Stücke
auf Bestellung 32 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 32+ | 2.23 EUR |
| MSMBJ12CA |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 14V; 30.2A; bidirectional; ±5%; DO214AA
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 12V
Breakdown voltage: 14V
Max. forward impulse current: 30.2A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AA
Mounting: SMD
Leakage current: 5µA
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 14V; 30.2A; bidirectional; ±5%; DO214AA
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 12V
Breakdown voltage: 14V
Max. forward impulse current: 30.2A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AA
Mounting: SMD
Leakage current: 5µA
Produkt ist nicht verfügbar
| MSMBJ12CA |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 14V; 30.2A; bidirectional; ±5%; DO214AA
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 12V
Breakdown voltage: 14V
Max. forward impulse current: 30.2A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AA
Mounting: SMD
Leakage current: 5µA
Anzahl je Verpackung: 1 Stücke
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 14V; 30.2A; bidirectional; ±5%; DO214AA
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 12V
Breakdown voltage: 14V
Max. forward impulse current: 30.2A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AA
Mounting: SMD
Leakage current: 5µA
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| MSMBJ15A |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 17.6V; 24A; unidirectional; ±5%; DO214AA
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 15V
Breakdown voltage: 17.6V
Max. forward impulse current: 24A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO214AA
Mounting: SMD
Leakage current: 1µA
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 17.6V; 24A; unidirectional; ±5%; DO214AA
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 15V
Breakdown voltage: 17.6V
Max. forward impulse current: 24A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO214AA
Mounting: SMD
Leakage current: 1µA
auf Bestellung 29 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 29+ | 2.46 EUR |
| MSMBJ15A |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 17.6V; 24A; unidirectional; ±5%; DO214AA
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 15V
Breakdown voltage: 17.6V
Max. forward impulse current: 24A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO214AA
Mounting: SMD
Leakage current: 1µA
Anzahl je Verpackung: 1 Stücke
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 17.6V; 24A; unidirectional; ±5%; DO214AA
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 15V
Breakdown voltage: 17.6V
Max. forward impulse current: 24A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO214AA
Mounting: SMD
Leakage current: 1µA
Anzahl je Verpackung: 1 Stücke
auf Bestellung 29 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 29+ | 2.46 EUR |
| 30+ | 2.39 EUR |
| 100+ | 1.4 EUR |
| MSMBJ45CA |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 52.65V; 8.3A; bidirectional; ±5%; DO214AA
Type of diode: TVS
Mounting: SMD
Tolerance: ±5%
Case: DO214AA
Semiconductor structure: bidirectional
Leakage current: 1µA
Max. forward impulse current: 8.3A
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 45V
Breakdown voltage: 52.65V
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 52.65V; 8.3A; bidirectional; ±5%; DO214AA
Type of diode: TVS
Mounting: SMD
Tolerance: ±5%
Case: DO214AA
Semiconductor structure: bidirectional
Leakage current: 1µA
Max. forward impulse current: 8.3A
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 45V
Breakdown voltage: 52.65V
Produkt ist nicht verfügbar
| MSMBJ45CA |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 52.65V; 8.3A; bidirectional; ±5%; DO214AA
Type of diode: TVS
Mounting: SMD
Tolerance: ±5%
Case: DO214AA
Semiconductor structure: bidirectional
Leakage current: 1µA
Max. forward impulse current: 8.3A
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 45V
Breakdown voltage: 52.65V
Anzahl je Verpackung: 1 Stücke
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 52.65V; 8.3A; bidirectional; ±5%; DO214AA
Type of diode: TVS
Mounting: SMD
Tolerance: ±5%
Case: DO214AA
Semiconductor structure: bidirectional
Leakage current: 1µA
Max. forward impulse current: 8.3A
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 45V
Breakdown voltage: 52.65V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| MSMBJ48A |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 56.1V; 7.7A; unidirectional; ±5%; DO214AA
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 48V
Breakdown voltage: 56.1V
Max. forward impulse current: 7.7A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO214AA
Mounting: SMD
Leakage current: 1µA
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 56.1V; 7.7A; unidirectional; ±5%; DO214AA
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 48V
Breakdown voltage: 56.1V
Max. forward impulse current: 7.7A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO214AA
Mounting: SMD
Leakage current: 1µA
auf Bestellung 3 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 3+ | 23.84 EUR |
| MSMBJ48A |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 56.1V; 7.7A; unidirectional; ±5%; DO214AA
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 48V
Breakdown voltage: 56.1V
Max. forward impulse current: 7.7A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO214AA
Mounting: SMD
Leakage current: 1µA
Anzahl je Verpackung: 1 Stücke
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 56.1V; 7.7A; unidirectional; ±5%; DO214AA
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 48V
Breakdown voltage: 56.1V
Max. forward impulse current: 7.7A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO214AA
Mounting: SMD
Leakage current: 1µA
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 3+ | 23.84 EUR |
| 5+ | 14.3 EUR |
| MSMBJ51A |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 59.7V; 7.3A; unidirectional; ±5%; DO214AA
Type of diode: TVS
Mounting: SMD
Tolerance: ±5%
Case: DO214AA
Semiconductor structure: unidirectional
Leakage current: 1µA
Max. forward impulse current: 7.3A
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 51V
Breakdown voltage: 59.7V
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 59.7V; 7.3A; unidirectional; ±5%; DO214AA
Type of diode: TVS
Mounting: SMD
Tolerance: ±5%
Case: DO214AA
Semiconductor structure: unidirectional
Leakage current: 1µA
Max. forward impulse current: 7.3A
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 51V
Breakdown voltage: 59.7V
Produkt ist nicht verfügbar
| MSMBJ51A |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 59.7V; 7.3A; unidirectional; ±5%; DO214AA
Type of diode: TVS
Mounting: SMD
Tolerance: ±5%
Case: DO214AA
Semiconductor structure: unidirectional
Leakage current: 1µA
Max. forward impulse current: 7.3A
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 51V
Breakdown voltage: 59.7V
Anzahl je Verpackung: 1 Stücke
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 59.7V; 7.3A; unidirectional; ±5%; DO214AA
Type of diode: TVS
Mounting: SMD
Tolerance: ±5%
Case: DO214AA
Semiconductor structure: unidirectional
Leakage current: 1µA
Max. forward impulse current: 7.3A
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 51V
Breakdown voltage: 59.7V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| MSMBJ6.0CAE3 |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 7V; 58.3A; bidirectional; ±5%; DO214AA
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 6V
Breakdown voltage: 7V
Max. forward impulse current: 58.3A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AA
Mounting: SMD
Leakage current: 0.8mA
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 7V; 58.3A; bidirectional; ±5%; DO214AA
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 6V
Breakdown voltage: 7V
Max. forward impulse current: 58.3A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AA
Mounting: SMD
Leakage current: 0.8mA
Produkt ist nicht verfügbar
| MSMBJ6.0CAE3 |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 7V; 58.3A; bidirectional; ±5%; DO214AA
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 6V
Breakdown voltage: 7V
Max. forward impulse current: 58.3A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AA
Mounting: SMD
Leakage current: 0.8mA
Anzahl je Verpackung: 1 Stücke
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 7V; 58.3A; bidirectional; ±5%; DO214AA
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 6V
Breakdown voltage: 7V
Max. forward impulse current: 58.3A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AA
Mounting: SMD
Leakage current: 0.8mA
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| MSMBJ8.5CA |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 9.9V; 41.7A; bidirectional; ±5%; DO214AA
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 8.5V
Breakdown voltage: 9.9V
Max. forward impulse current: 41.7A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AA
Mounting: SMD
Leakage current: 10µA
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 9.9V; 41.7A; bidirectional; ±5%; DO214AA
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 8.5V
Breakdown voltage: 9.9V
Max. forward impulse current: 41.7A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AA
Mounting: SMD
Leakage current: 10µA
Produkt ist nicht verfügbar
| MSMBJ8.5CA |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 9.9V; 41.7A; bidirectional; ±5%; DO214AA
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 8.5V
Breakdown voltage: 9.9V
Max. forward impulse current: 41.7A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AA
Mounting: SMD
Leakage current: 10µA
Anzahl je Verpackung: 1 Stücke
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 9.9V; 41.7A; bidirectional; ±5%; DO214AA
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 8.5V
Breakdown voltage: 9.9V
Max. forward impulse current: 41.7A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AA
Mounting: SMD
Leakage current: 10µA
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| MSMBJ9.0A |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 10.6V; 39A; unidirectional; ±5%; DO214AA
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 9V
Breakdown voltage: 10.6V
Max. forward impulse current: 39A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO214AA
Mounting: SMD
Leakage current: 5µA
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 10.6V; 39A; unidirectional; ±5%; DO214AA
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 9V
Breakdown voltage: 10.6V
Max. forward impulse current: 39A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO214AA
Mounting: SMD
Leakage current: 5µA
Produkt ist nicht verfügbar
| MSMBJ9.0A |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 10.6V; 39A; unidirectional; ±5%; DO214AA
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 9V
Breakdown voltage: 10.6V
Max. forward impulse current: 39A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO214AA
Mounting: SMD
Leakage current: 5µA
Anzahl je Verpackung: 1 Stücke
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 10.6V; 39A; unidirectional; ±5%; DO214AA
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 9V
Breakdown voltage: 10.6V
Max. forward impulse current: 39A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO214AA
Mounting: SMD
Leakage current: 5µA
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| MSMCGLCE18A |
|
Hersteller: MICROCHIP (MICROSEMI)
MSMCGLCE18A Unidirectional SMD transil diodes
MSMCGLCE18A Unidirectional SMD transil diodes
Produkt ist nicht verfügbar
| MSMCJ17CA |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 19.9V; 53.3A; bidirectional; ±5%; DO214AB
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 17V
Breakdown voltage: 19.9V
Max. forward impulse current: 53.3A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AB
Mounting: SMD
Leakage current: 1µA
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 19.9V; 53.3A; bidirectional; ±5%; DO214AB
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 17V
Breakdown voltage: 19.9V
Max. forward impulse current: 53.3A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AB
Mounting: SMD
Leakage current: 1µA
Produkt ist nicht verfügbar
| MSMCJ17CA |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 19.9V; 53.3A; bidirectional; ±5%; DO214AB
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 17V
Breakdown voltage: 19.9V
Max. forward impulse current: 53.3A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AB
Mounting: SMD
Leakage current: 1µA
Anzahl je Verpackung: 1 Stücke
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 19.9V; 53.3A; bidirectional; ±5%; DO214AB
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 17V
Breakdown voltage: 19.9V
Max. forward impulse current: 53.3A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AB
Mounting: SMD
Leakage current: 1µA
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| MSMCJ45CA |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 52.6V; 20.6A; bidirectional; ±5%; DO214AB
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 45V
Breakdown voltage: 52.6V
Max. forward impulse current: 20.6A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AB
Mounting: SMD
Leakage current: 1µA
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 52.6V; 20.6A; bidirectional; ±5%; DO214AB
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 45V
Breakdown voltage: 52.6V
Max. forward impulse current: 20.6A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AB
Mounting: SMD
Leakage current: 1µA
Produkt ist nicht verfügbar
| MSMCJ45CA |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 52.6V; 20.6A; bidirectional; ±5%; DO214AB
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 45V
Breakdown voltage: 52.6V
Max. forward impulse current: 20.6A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AB
Mounting: SMD
Leakage current: 1µA
Anzahl je Verpackung: 1 Stücke
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 52.6V; 20.6A; bidirectional; ±5%; DO214AB
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 45V
Breakdown voltage: 52.6V
Max. forward impulse current: 20.6A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AB
Mounting: SMD
Leakage current: 1µA
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| MSMCJ8.0CA |
|
Hersteller: MICROCHIP (MICROSEMI)
MSMCJ8.0CA Bidirectional SMD transil diodes
MSMCJ8.0CA Bidirectional SMD transil diodes
Produkt ist nicht verfügbar
| MSMLJ100CA |
|
Hersteller: MICROCHIP (MICROSEMI)
MSMLJ100CA Bidirectional SMD transil diodes
MSMLJ100CA Bidirectional SMD transil diodes
Produkt ist nicht verfügbar
| MSMLJ12CAe3 |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 3kW; 14V; 150.6A; bidirectional; ±5%; DO214AB
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 12V
Breakdown voltage: 14V
Max. forward impulse current: 150.6A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AB
Mounting: SMD
Leakage current: 5µA
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 3kW; 14V; 150.6A; bidirectional; ±5%; DO214AB
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 12V
Breakdown voltage: 14V
Max. forward impulse current: 150.6A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AB
Mounting: SMD
Leakage current: 5µA
Produkt ist nicht verfügbar
| MSMLJ12CAe3 |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 3kW; 14V; 150.6A; bidirectional; ±5%; DO214AB
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 12V
Breakdown voltage: 14V
Max. forward impulse current: 150.6A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AB
Mounting: SMD
Leakage current: 5µA
Anzahl je Verpackung: 1 Stücke
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 3kW; 14V; 150.6A; bidirectional; ±5%; DO214AB
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 12V
Breakdown voltage: 14V
Max. forward impulse current: 150.6A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AB
Mounting: SMD
Leakage current: 5µA
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar