MSCSM120SKM11CT3AG Microchip Technology
Hersteller: Microchip Technology
Description: PM-MOSFET-SIC-SBD~-SP3F
Packaging: Tube
Package / Case: Module
Mounting Type: Chassis Mount
Type: MOSFET
Configuration: 1 Phase
Voltage - Isolation: 4000Vrms
Part Status: Active
Current: 254 A
Voltage: 1.2 kV
Description: PM-MOSFET-SIC-SBD~-SP3F
Packaging: Tube
Package / Case: Module
Mounting Type: Chassis Mount
Type: MOSFET
Configuration: 1 Phase
Voltage - Isolation: 4000Vrms
Part Status: Active
Current: 254 A
Voltage: 1.2 kV
auf Bestellung 4 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1+ | 412.44 EUR |
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Technische Details MSCSM120SKM11CT3AG Microchip Technology
Category: Transistor modules MOSFET, Description: Module; SiC diode/transistor; 1.2kV; 202A; SP3F; Press-in PCB, Case: SP3F, Topology: buck chopper; NTC thermistor, Pulsed drain current: 500A, Semiconductor structure: SiC diode/transistor, Drain-source voltage: 1.2kV, Drain current: 202A, On-state resistance: 10.4mΩ, Power dissipation: 1067W, Electrical mounting: Press-in PCB, Mechanical mounting: screw, Type of module: MOSFET transistor, Technology: SiC, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote MSCSM120SKM11CT3AG
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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MSCSM120SKM11CT3AG | Hersteller : MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 1.2kV; 202A; SP3F; Press-in PCB Case: SP3F Topology: buck chopper; NTC thermistor Pulsed drain current: 500A Semiconductor structure: SiC diode/transistor Drain-source voltage: 1.2kV Drain current: 202A On-state resistance: 10.4mΩ Power dissipation: 1067W Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: MOSFET transistor Technology: SiC Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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MSCSM120SKM11CT3AG | Hersteller : Microchip Technology | Discrete Semiconductor Modules PM-MOSFET-SIC-SBD-SP3F |
Produkt ist nicht verfügbar |
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MSCSM120SKM11CT3AG | Hersteller : MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 1.2kV; 202A; SP3F; Press-in PCB Case: SP3F Topology: buck chopper; NTC thermistor Pulsed drain current: 500A Semiconductor structure: SiC diode/transistor Drain-source voltage: 1.2kV Drain current: 202A On-state resistance: 10.4mΩ Power dissipation: 1067W Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: MOSFET transistor Technology: SiC |
Produkt ist nicht verfügbar |