![APTM120U10SAG APTM120U10SAG](https://download.siliconexpert.com/pdfs/2009/9/6/7/59/27/592/mcs_/manual/aptm120u10sag.jpg)
APTM120U10SAG Microchip Technology
Produkt ist nicht verfügbar
Produktrezensionen
Produktbewertung abgeben
Technische Details APTM120U10SAG Microchip Technology
Category: Transistor modules MOSFET, Description: Module; diode/transistor; 1.2kV; 86A; SP6C; Idm: 464A; 3.29kW; screw, Type of module: MOSFET transistor, Mechanical mounting: screw, Pulsed drain current: 464A, Semiconductor structure: diode/transistor, Drain-source voltage: 1.2kV, Drain current: 86A, On-state resistance: 0.12Ω, Power dissipation: 3.29kW, Electrical mounting: FASTON connectors; screw, Technology: POWER MOS 7®, Gate-source voltage: ±30V, Topology: single transistor + series diode - parrallel diode, Case: SP6C, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote APTM120U10SAG
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
---|---|---|---|---|---|
APTM120U10SAG | Hersteller : MICROCHIP (MICROSEMI) |
![]() Description: Module; diode/transistor; 1.2kV; 86A; SP6C; Idm: 464A; 3.29kW; screw Type of module: MOSFET transistor Mechanical mounting: screw Pulsed drain current: 464A Semiconductor structure: diode/transistor Drain-source voltage: 1.2kV Drain current: 86A On-state resistance: 0.12Ω Power dissipation: 3.29kW Electrical mounting: FASTON connectors; screw Technology: POWER MOS 7® Gate-source voltage: ±30V Topology: single transistor + series diode - parrallel diode Case: SP6C Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||
|
APTM120U10SAG | Hersteller : Microchip Technology |
![]() |
Produkt ist nicht verfügbar |
|
APTM120U10SAG | Hersteller : Microchip Technology |
![]() |
Produkt ist nicht verfügbar |
||
APTM120U10SAG | Hersteller : MICROCHIP (MICROSEMI) |
![]() Description: Module; diode/transistor; 1.2kV; 86A; SP6C; Idm: 464A; 3.29kW; screw Type of module: MOSFET transistor Mechanical mounting: screw Pulsed drain current: 464A Semiconductor structure: diode/transistor Drain-source voltage: 1.2kV Drain current: 86A On-state resistance: 0.12Ω Power dissipation: 3.29kW Electrical mounting: FASTON connectors; screw Technology: POWER MOS 7® Gate-source voltage: ±30V Topology: single transistor + series diode - parrallel diode Case: SP6C |
Produkt ist nicht verfügbar |