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APTM100H45STG

APTM100H45STG Microchip Technology


index.php?option=com_docman&task=doc_download&gid=8015 Hersteller: Microchip Technology
Description: MOSFET 4N-CH 1000V 18A SP4
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Technische Details APTM100H45STG Microchip Technology

Category: Transistor modules MOSFET, Description: Module; diode/transistor; 1kV; 14A; SP4; FASTON connectors,screw, Type of module: MOSFET transistor, Mechanical mounting: screw, Pulsed drain current: 72A, Semiconductor structure: diode/transistor, Drain-source voltage: 1kV, Drain current: 14A, On-state resistance: 0.54Ω, Power dissipation: 357W, Electrical mounting: FASTON connectors; screw, Technology: POWER MOS 7®, Gate-source voltage: ±30V, Topology: H bridge + parrallel diodes + sereies diodes; NTC thermistor, Case: SP4, Anzahl je Verpackung: 1 Stücke.

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APTM100H45STG APTM100H45STG Hersteller : Microchip Technology 13188015-aptm100h45stg-rev3-pdf.pdf Trans MOSFET N-CH 1KV 18A 20-Pin Case SP-4 Tube
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APTM100H45STG Hersteller : MICROCHIP (MICROSEMI) index.php?option=com_docman&task=doc_download&gid=8015 Category: Transistor modules MOSFET
Description: Module; diode/transistor; 1kV; 14A; SP4; FASTON connectors,screw
Type of module: MOSFET transistor
Mechanical mounting: screw
Pulsed drain current: 72A
Semiconductor structure: diode/transistor
Drain-source voltage: 1kV
Drain current: 14A
On-state resistance: 0.54Ω
Power dissipation: 357W
Electrical mounting: FASTON connectors; screw
Technology: POWER MOS 7®
Gate-source voltage: ±30V
Topology: H bridge + parrallel diodes + sereies diodes; NTC thermistor
Case: SP4
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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APTM100H45STG Hersteller : Microchip Technology APTM100H45STG_Rev5-3445098.pdf MOSFET Modules PM-MOSFET-7-SP4
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APTM100H45STG Hersteller : MICROCHIP (MICROSEMI) index.php?option=com_docman&task=doc_download&gid=8015 Category: Transistor modules MOSFET
Description: Module; diode/transistor; 1kV; 14A; SP4; FASTON connectors,screw
Type of module: MOSFET transistor
Mechanical mounting: screw
Pulsed drain current: 72A
Semiconductor structure: diode/transistor
Drain-source voltage: 1kV
Drain current: 14A
On-state resistance: 0.54Ω
Power dissipation: 357W
Electrical mounting: FASTON connectors; screw
Technology: POWER MOS 7®
Gate-source voltage: ±30V
Topology: H bridge + parrallel diodes + sereies diodes; NTC thermistor
Case: SP4
Produkt ist nicht verfügbar