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APTM100UM45DAG Microchip Technology
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Description: MOSFET N-CH 1000V 215A SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 215A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 107.5A, 10V
Power Dissipation (Max): 5000W (Tc)
Vgs(th) (Max) @ Id: 5V @ 30mA
Supplier Device Package: SP6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 1602 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 42700 pF @ 25 V
auf Bestellung 34 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1+ | 717.32 EUR |
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Technische Details APTM100UM45DAG Microchip Technology
Description: MOSFET N-CH 1000V 215A SP6, Packaging: Bulk, Package / Case: SP6, Mounting Type: Chassis Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 215A (Tc), Rds On (Max) @ Id, Vgs: 52mOhm @ 107.5A, 10V, Power Dissipation (Max): 5000W (Tc), Vgs(th) (Max) @ Id: 5V @ 30mA, Supplier Device Package: SP6, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 1000 V, Gate Charge (Qg) (Max) @ Vgs: 1602 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 42700 pF @ 25 V.
Weitere Produktangebote APTM100UM45DAG nach Preis ab 536.8 EUR bis 722.62 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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APTM100UM45DAG | Hersteller : Microchip Technology |
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auf Bestellung 1 Stücke: Lieferzeit 10-14 Tag (e) |
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APTM100UM45DAG | Hersteller : Microchip / Microsemi |
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auf Bestellung 2 Stücke: Lieferzeit 10-14 Tag (e) |
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APTM100UM45DAG | Hersteller : Microchip Technology |
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Produkt ist nicht verfügbar |
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APTM100UM45DAG | Hersteller : MICROCHIP (MICROSEMI) |
![]() Description: Module; diode/transistor; 1kV; 160A; SP6C; Idm: 860A; 5kW; Ugs: ±30V Type of module: MOSFET transistor Mechanical mounting: screw Pulsed drain current: 860A Semiconductor structure: diode/transistor Drain-source voltage: 1kV Drain current: 160A On-state resistance: 52mΩ Power dissipation: 5kW Electrical mounting: FASTON connectors; screw Technology: POWER MOS 7® Gate-source voltage: ±30V Topology: single transistor + series diode Case: SP6C Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APTM100UM45DAG | Hersteller : MICROSEMI |
![]() Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APTM100UM45DAG | Hersteller : MICROCHIP (MICROSEMI) |
![]() Description: Module; diode/transistor; 1kV; 160A; SP6C; Idm: 860A; 5kW; Ugs: ±30V Type of module: MOSFET transistor Mechanical mounting: screw Pulsed drain current: 860A Semiconductor structure: diode/transistor Drain-source voltage: 1kV Drain current: 160A On-state resistance: 52mΩ Power dissipation: 5kW Electrical mounting: FASTON connectors; screw Technology: POWER MOS 7® Gate-source voltage: ±30V Topology: single transistor + series diode Case: SP6C |
Produkt ist nicht verfügbar |