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APTM100H45FT3G

APTM100H45FT3G Microchip Technology


6818013-aptm100h45ft3g-rev3-datasheet.pdf Hersteller: Microchip Technology
Trans MOSFET N-CH 1KV 18A 32-Pin Case SP-3 Tube
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Technische Details APTM100H45FT3G Microchip Technology

Category: Transistor modules MOSFET, Description: Module; transistor/transistor; 1kV; 14A; SP3; Press-in PCB; 357W, Type of module: MOSFET transistor, Mechanical mounting: screw, Pulsed drain current: 72A, Semiconductor structure: transistor/transistor, Drain-source voltage: 1kV, Drain current: 14A, On-state resistance: 0.54Ω, Power dissipation: 357W, Electrical mounting: Press-in PCB, Technology: FREDFET; POWER MOS 7®, Gate-source voltage: ±30V, Topology: H-bridge; NTC thermistor, Case: SP3, Anzahl je Verpackung: 1 Stücke.

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APTM100H45FT3G Hersteller : MICROCHIP (MICROSEMI) index.php?option=com_docman&task=doc_download&gid=8013 Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1kV; 14A; SP3; Press-in PCB; 357W
Type of module: MOSFET transistor
Mechanical mounting: screw
Pulsed drain current: 72A
Semiconductor structure: transistor/transistor
Drain-source voltage: 1kV
Drain current: 14A
On-state resistance: 0.54Ω
Power dissipation: 357W
Electrical mounting: Press-in PCB
Technology: FREDFET; POWER MOS 7®
Gate-source voltage: ±30V
Topology: H-bridge; NTC thermistor
Case: SP3
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
APTM100H45FT3G Hersteller : Microsemi Corporation index.php?option=com_docman&task=doc_download&gid=8013 Description: MOSFET 4N-CH 1000V 18A SP3
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APTM100H45FT3G Hersteller : Microchip / Microsemi index.php?option=com_docman&task=doc_download&gid=8013 Discrete Semiconductor Modules DOR CC3030
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APTM100H45FT3G Hersteller : Microchip Technology APTM100H45FT3G_Rev3-3445146.pdf Discrete Semiconductor Modules PM-MOSFET-FREDFET-7-SP3
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APTM100H45FT3G Hersteller : MICROCHIP (MICROSEMI) index.php?option=com_docman&task=doc_download&gid=8013 Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1kV; 14A; SP3; Press-in PCB; 357W
Type of module: MOSFET transistor
Mechanical mounting: screw
Pulsed drain current: 72A
Semiconductor structure: transistor/transistor
Drain-source voltage: 1kV
Drain current: 14A
On-state resistance: 0.54Ω
Power dissipation: 357W
Electrical mounting: Press-in PCB
Technology: FREDFET; POWER MOS 7®
Gate-source voltage: ±30V
Topology: H-bridge; NTC thermistor
Case: SP3
Produkt ist nicht verfügbar