APTM100A13SCG Microchip Technology
auf Bestellung 7 Stücke:
Lieferzeit 304-308 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 581.64 EUR |
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Technische Details APTM100A13SCG Microchip Technology
Category: Transistor modules MOSFET, Description: Module; SiC diode/transistor; 1kV; 49A; SP6C; Idm: 240A; 1.25kW, Semiconductor structure: SiC diode/transistor, Case: SP6C, Power dissipation: 1.25kW, Technology: POWER MOS 7®; SiC, Drain-source voltage: 1kV, Drain current: 49A, On-state resistance: 156mΩ, Electrical mounting: FASTON connectors; screw, Mechanical mounting: screw, Type of module: MOSFET transistor, Gate-source voltage: ±30V, Topology: MOSFET half-bridge + serial diodes + parrallel diodes, Pulsed drain current: 240A, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote APTM100A13SCG
| Foto | Bezeichnung | Hersteller | Beschreibung |
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APTM100A13SCG | Hersteller : Microchip Technology |
 Trans MOSFET N-CH 1KV 65A 7-Pin Case SP-6 Tube |
Produkt ist nicht verfügbar |
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| APTM100A13SCG | Hersteller : MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 1kV; 49A; SP6C; Idm: 240A; 1.25kW Semiconductor structure: SiC diode/transistor Case: SP6C Power dissipation: 1.25kW Technology: POWER MOS 7®; SiC Drain-source voltage: 1kV Drain current: 49A On-state resistance: 156mΩ Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: MOSFET transistor Gate-source voltage: ±30V Topology: MOSFET half-bridge + serial diodes + parrallel diodes Pulsed drain current: 240A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| APTM100A13SCG | Hersteller : MICROSEMI |
SP6/POWER MODULE - SIC APTM100A13S Anzahl je Verpackung: 1 Stücke |
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APTM100A13SCG | Hersteller : Microchip Technology |
Description: MOSFET 2N-CH 1000V 65A SP6 Packaging: Bulk Package / Case: SP6 Mounting Type: Chassis Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1250W Drain to Source Voltage (Vdss): 1000V (1kV) Current - Continuous Drain (Id) @ 25°C: 65A Input Capacitance (Ciss) (Max) @ Vds: 15200pF @ 25V Rds On (Max) @ Id, Vgs: 156mOhm @ 32.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 562nC @ 10V Vgs(th) (Max) @ Id: 5V @ 6mA Supplier Device Package: SP6 |
Produkt ist nicht verfügbar |
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| APTM100A13SCG | Hersteller : Microchip / Microsemi | Discrete Semiconductor Modules CC6025 |
Produkt ist nicht verfügbar |
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| APTM100A13SCG | Hersteller : MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 1kV; 49A; SP6C; Idm: 240A; 1.25kW Semiconductor structure: SiC diode/transistor Case: SP6C Power dissipation: 1.25kW Technology: POWER MOS 7®; SiC Drain-source voltage: 1kV Drain current: 49A On-state resistance: 156mΩ Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: MOSFET transistor Gate-source voltage: ±30V Topology: MOSFET half-bridge + serial diodes + parrallel diodes Pulsed drain current: 240A |
Produkt ist nicht verfügbar |