![APTM100H18FG APTM100H18FG](https://download.siliconexpert.com/pdfs/2015/2/10/12/31/56/37/mcs_/manual/aptm100h18fg.jpg)
APTM100H18FG Microchip Technology
Produkt ist nicht verfügbar
Produktrezensionen
Produktbewertung abgeben
Technische Details APTM100H18FG Microchip Technology
Category: Transistor modules MOSFET, Description: Module; transistor/transistor; 1kV; 33A; SP6C; Topology: H-bridge, Type of module: MOSFET transistor, Mechanical mounting: screw, Pulsed drain current: 172A, Semiconductor structure: transistor/transistor, Drain-source voltage: 1kV, Drain current: 33A, On-state resistance: 0.21Ω, Power dissipation: 780W, Electrical mounting: FASTON connectors; screw, Technology: FREDFET; POWER MOS 7®, Gate-source voltage: ±30V, Topology: H-bridge, Case: SP6C, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote APTM100H18FG
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
---|---|---|---|---|---|
APTM100H18FG | Hersteller : MICROCHIP (MICROSEMI) |
![]() Description: Module; transistor/transistor; 1kV; 33A; SP6C; Topology: H-bridge Type of module: MOSFET transistor Mechanical mounting: screw Pulsed drain current: 172A Semiconductor structure: transistor/transistor Drain-source voltage: 1kV Drain current: 33A On-state resistance: 0.21Ω Power dissipation: 780W Electrical mounting: FASTON connectors; screw Technology: FREDFET; POWER MOS 7® Gate-source voltage: ±30V Topology: H-bridge Case: SP6C Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||
![]() |
APTM100H18FG | Hersteller : Microsemi Corporation |
![]() |
Produkt ist nicht verfügbar |
|
APTM100H18FG | Hersteller : Microchip / Microsemi |
![]() |
Produkt ist nicht verfügbar |
||
APTM100H18FG | Hersteller : Microchip Technology |
![]() |
Produkt ist nicht verfügbar |
||
APTM100H18FG | Hersteller : MICROCHIP (MICROSEMI) |
![]() Description: Module; transistor/transistor; 1kV; 33A; SP6C; Topology: H-bridge Type of module: MOSFET transistor Mechanical mounting: screw Pulsed drain current: 172A Semiconductor structure: transistor/transistor Drain-source voltage: 1kV Drain current: 33A On-state resistance: 0.21Ω Power dissipation: 780W Electrical mounting: FASTON connectors; screw Technology: FREDFET; POWER MOS 7® Gate-source voltage: ±30V Topology: H-bridge Case: SP6C |
Produkt ist nicht verfügbar |