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APTM100H35FT3G

APTM100H35FT3G Microchip Technology


6808010-aptm100h35ft3g-rev4-datasheet.pdf Hersteller: Microchip Technology
Trans MOSFET N-CH 1KV 22A 32-Pin Case SP-3 Tube
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Technische Details APTM100H35FT3G Microchip Technology

Category: Transistor modules MOSFET, Description: Module; transistor/transistor; 1kV; 17A; SP3; Press-in PCB; 390W, Type of module: MOSFET transistor, Mechanical mounting: screw, Pulsed drain current: 88A, Semiconductor structure: transistor/transistor, Drain-source voltage: 1kV, Drain current: 17A, On-state resistance: 0.42Ω, Power dissipation: 390W, Electrical mounting: Press-in PCB, Technology: FREDFET; POWER MOS 7®, Gate-source voltage: ±30V, Topology: H-bridge; NTC thermistor, Case: SP3, Anzahl je Verpackung: 1 Stücke.

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APTM100H35FT3G Hersteller : MICROCHIP (MICROSEMI) index.php?option=com_docman&task=doc_download&gid=8010 Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1kV; 17A; SP3; Press-in PCB; 390W
Type of module: MOSFET transistor
Mechanical mounting: screw
Pulsed drain current: 88A
Semiconductor structure: transistor/transistor
Drain-source voltage: 1kV
Drain current: 17A
On-state resistance: 0.42Ω
Power dissipation: 390W
Electrical mounting: Press-in PCB
Technology: FREDFET; POWER MOS 7®
Gate-source voltage: ±30V
Topology: H-bridge; NTC thermistor
Case: SP3
Anzahl je Verpackung: 1 Stücke
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APTM100H35FT3G Hersteller : Microsemi Corporation index.php?option=com_docman&task=doc_download&gid=8010 Description: MOSFET 4N-CH 1000V 22A SP3
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APTM100H35FT3G Hersteller : Microchip / Microsemi index.php?option=com_docman&task=doc_download&gid=8010 Discrete Semiconductor Modules DOR CC3015
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APTM100H35FT3G Hersteller : Microchip Technology APTM100H35FT3G_Rev4-3445443.pdf MOSFET Modules PM-MOSFET-FREDFET-7-SP3
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APTM100H35FT3G Hersteller : MICROCHIP (MICROSEMI) index.php?option=com_docman&task=doc_download&gid=8010 Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1kV; 17A; SP3; Press-in PCB; 390W
Type of module: MOSFET transistor
Mechanical mounting: screw
Pulsed drain current: 88A
Semiconductor structure: transistor/transistor
Drain-source voltage: 1kV
Drain current: 17A
On-state resistance: 0.42Ω
Power dissipation: 390W
Electrical mounting: Press-in PCB
Technology: FREDFET; POWER MOS 7®
Gate-source voltage: ±30V
Topology: H-bridge; NTC thermistor
Case: SP3
Produkt ist nicht verfügbar