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APTGT75TDU120PG Microchip Technology
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Technische Details APTGT75TDU120PG Microchip Technology
Description: IGBT MODULE 1200V 100A 350W SP6P, Packaging: Bulk, Package / Case: SP6, Mounting Type: Chassis Mount, Input: Standard, Configuration: Triple, Dual - Common Source, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A, NTC Thermistor: No, Supplier Device Package: SP6-P, IGBT Type: Trench Field Stop, Current - Collector (Ic) (Max): 100 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 350 W, Current - Collector Cutoff (Max): 250 µA, Input Capacitance (Cies) @ Vce: 5.34 nF @ 25 V.
Weitere Produktangebote APTGT75TDU120PG
Foto | Bezeichnung | Hersteller | Beschreibung |
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Preis ohne MwSt |
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APTGT75TDU120PG | Hersteller : MICROCHIP (MICROSEMI) |
![]() Description: Module: IGBT; transistor/transistor,common emitter; IGBT x6 Technology: Field Stop; Trench Collector current: 75A Case: SP6P Gate-emitter voltage: ±20V Pulsed collector current: 175A Semiconductor structure: common emitter; transistor/transistor Max. off-state voltage: 1.2kV Electrical mounting: Press-in PCB Topology: IGBT x6 Mechanical mounting: screw Type of module: IGBT Anzahl je Verpackung: 5 Stücke |
Produkt ist nicht verfügbar |
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APTGT75TDU120PG | Hersteller : Microchip Technology |
![]() Packaging: Bulk Package / Case: SP6 Mounting Type: Chassis Mount Input: Standard Configuration: Triple, Dual - Common Source Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A NTC Thermistor: No Supplier Device Package: SP6-P IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 100 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 350 W Current - Collector Cutoff (Max): 250 µA Input Capacitance (Cies) @ Vce: 5.34 nF @ 25 V |
Produkt ist nicht verfügbar |
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APTGT75TDU120PG | Hersteller : Microchip Technology |
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Produkt ist nicht verfügbar |
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APTGT75TDU120PG | Hersteller : MICROCHIP (MICROSEMI) |
![]() Description: Module: IGBT; transistor/transistor,common emitter; IGBT x6 Technology: Field Stop; Trench Collector current: 75A Case: SP6P Gate-emitter voltage: ±20V Pulsed collector current: 175A Semiconductor structure: common emitter; transistor/transistor Max. off-state voltage: 1.2kV Electrical mounting: Press-in PCB Topology: IGBT x6 Mechanical mounting: screw Type of module: IGBT |
Produkt ist nicht verfügbar |