APTM100A13DG Microchip Technology
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Technische Details APTM100A13DG Microchip Technology
Category: Transistor modules MOSFET, Description: Module; diode/transistor; 1kV; 49A; SP6C; FASTON connectors,screw, Type of module: MOSFET transistor, Mechanical mounting: screw, Pulsed drain current: 240A, Semiconductor structure: diode/transistor, Drain-source voltage: 1kV, Drain current: 49A, On-state resistance: 156mΩ, Power dissipation: 1.25kW, Electrical mounting: FASTON connectors; screw, Technology: POWER MOS 7®, Gate-source voltage: ±30V, Topology: MOSFET half-bridge + serial diodes, Case: SP6C, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote APTM100A13DG
Foto | Bezeichnung | Hersteller | Beschreibung |
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APTM100A13DG | Hersteller : MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 1kV; 49A; SP6C; FASTON connectors,screw Type of module: MOSFET transistor Mechanical mounting: screw Pulsed drain current: 240A Semiconductor structure: diode/transistor Drain-source voltage: 1kV Drain current: 49A On-state resistance: 156mΩ Power dissipation: 1.25kW Electrical mounting: FASTON connectors; screw Technology: POWER MOS 7® Gate-source voltage: ±30V Topology: MOSFET half-bridge + serial diodes Case: SP6C Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APTM100A13DG | Hersteller : Microsemi Corporation | Description: MOSFET 2N-CH 1000V 65A SP6 |
Produkt ist nicht verfügbar |
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APTM100A13DG | Hersteller : Microchip / Microsemi | Discrete Semiconductor Modules CC6036 |
Produkt ist nicht verfügbar |
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APTM100A13DG | Hersteller : Microchip Technology | Discrete Semiconductor Modules CC6036 |
Produkt ist nicht verfügbar |
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APTM100A13DG | Hersteller : MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 1kV; 49A; SP6C; FASTON connectors,screw Type of module: MOSFET transistor Mechanical mounting: screw Pulsed drain current: 240A Semiconductor structure: diode/transistor Drain-source voltage: 1kV Drain current: 49A On-state resistance: 156mΩ Power dissipation: 1.25kW Electrical mounting: FASTON connectors; screw Technology: POWER MOS 7® Gate-source voltage: ±30V Topology: MOSFET half-bridge + serial diodes Case: SP6C |
Produkt ist nicht verfügbar |