APTM100A13SG Microchip Technology
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Technische Details APTM100A13SG Microchip Technology
Category: Transistor modules MOSFET, Description: Module; diode/transistor; 1kV; 49A; SP6C; FASTON connectors,screw, Semiconductor structure: diode/transistor, Case: SP6C, Power dissipation: 1.25kW, Technology: POWER MOS 7®, Drain-source voltage: 1kV, Drain current: 49A, On-state resistance: 156mΩ, Electrical mounting: FASTON connectors; screw, Mechanical mounting: screw, Type of module: MOSFET transistor, Gate-source voltage: ±30V, Topology: MOSFET half-bridge + serial diodes + parrallel diodes, Pulsed drain current: 240A, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote APTM100A13SG
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| APTM100A13SG | Hersteller : MICROCHIP (MICROSEMI) |
 Category: Transistor modules MOSFETDescription: Module; diode/transistor; 1kV; 49A; SP6C; FASTON connectors,screw Semiconductor structure: diode/transistor Case: SP6C Power dissipation: 1.25kW Technology: POWER MOS 7® Drain-source voltage: 1kV Drain current: 49A On-state resistance: 156mΩ Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: MOSFET transistor Gate-source voltage: ±30V Topology: MOSFET half-bridge + serial diodes + parrallel diodes Pulsed drain current: 240A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| APTM100A13SG | Hersteller : MICROSEMI |
SP6/65 A, 1000 V, 0.156 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER,MOSFET APTM100 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APTM100A13SG | Hersteller : Microsemi Corporation |
Description: MOSFET 2N-CH 1000V 65A SP6 |
Produkt ist nicht verfügbar |
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APTM100A13SG | Hersteller : Microchip Technology |
Discrete Semiconductor Modules PM-MOSFET-7-SP6C |
Produkt ist nicht verfügbar |
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| APTM100A13SG | Hersteller : MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 1kV; 49A; SP6C; FASTON connectors,screw Semiconductor structure: diode/transistor Case: SP6C Power dissipation: 1.25kW Technology: POWER MOS 7® Drain-source voltage: 1kV Drain current: 49A On-state resistance: 156mΩ Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: MOSFET transistor Gate-source voltage: ±30V Topology: MOSFET half-bridge + serial diodes + parrallel diodes Pulsed drain current: 240A |
Produkt ist nicht verfügbar |