APTM100AM90FG Microchip Technology
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Technische Details APTM100AM90FG Microchip Technology
Category: Transistor modules MOSFET, Description: Module; transistor/transistor; 1kV; 59A; SP6C; Idm: 312A; 1.25kW, Type of module: MOSFET transistor, Mechanical mounting: screw, Pulsed drain current: 312A, Semiconductor structure: transistor/transistor, Drain-source voltage: 1kV, Drain current: 59A, On-state resistance: 0.105Ω, Power dissipation: 1.25kW, Electrical mounting: FASTON connectors; screw, Technology: FREDFET; POWER MOS 7®, Gate-source voltage: ±30V, Topology: MOSFET half-bridge, Case: SP6C, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote APTM100AM90FG
Foto | Bezeichnung | Hersteller | Beschreibung |
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Preis ohne MwSt |
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APTM100AM90FG | Hersteller : MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 1kV; 59A; SP6C; Idm: 312A; 1.25kW Type of module: MOSFET transistor Mechanical mounting: screw Pulsed drain current: 312A Semiconductor structure: transistor/transistor Drain-source voltage: 1kV Drain current: 59A On-state resistance: 0.105Ω Power dissipation: 1.25kW Electrical mounting: FASTON connectors; screw Technology: FREDFET; POWER MOS 7® Gate-source voltage: ±30V Topology: MOSFET half-bridge Case: SP6C Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APTM100AM90FG | Hersteller : Microsemi Corporation | Description: MOSFET 2N-CH 1000V 78A SP6 |
Produkt ist nicht verfügbar |
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APTM100AM90FG | Hersteller : Microchip / Microsemi | Discrete Semiconductor Modules CC6067 |
Produkt ist nicht verfügbar |
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APTM100AM90FG | Hersteller : MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 1kV; 59A; SP6C; Idm: 312A; 1.25kW Type of module: MOSFET transistor Mechanical mounting: screw Pulsed drain current: 312A Semiconductor structure: transistor/transistor Drain-source voltage: 1kV Drain current: 59A On-state resistance: 0.105Ω Power dissipation: 1.25kW Electrical mounting: FASTON connectors; screw Technology: FREDFET; POWER MOS 7® Gate-source voltage: ±30V Topology: MOSFET half-bridge Case: SP6C |
Produkt ist nicht verfügbar |