Produkte > DIODES INCORPORATED > Alle Produkte des Herstellers DIODES INCORPORATED (75521) > Seite 1222 nach 1259
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| DMT12H065LFDF-13 | DIODES INCORPORATED |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 115V; 3.4A; Idm: 25A; 1.2W On-state resistance: 0.35Ω Type of transistor: N-MOSFET Power dissipation: 1.2W Polarisation: unipolar Kind of package: reel; tape Mounting: SMD Gate charge: 5.5nC Kind of channel: enhanced Gate-source voltage: ±12V Case: U-DFN2020-6 Pulsed drain current: 25A Drain-source voltage: 115V Drain current: 3.4A |
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US1K-13-F | DIODES INCORPORATED |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 800V; 1A; 75ns; SMA; Ufmax: 1.7V; Ifsm: 30A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.8kV Load current: 1A Reverse recovery time: 75ns Semiconductor structure: single diode Features of semiconductor devices: glass passivated Case: SMA Max. forward voltage: 1.7V Max. forward impulse current: 30A Kind of package: reel; tape |
auf Bestellung 3366 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN32D4SDW-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 500mA; Idm: 4A; 350mW; SOT363 Mounting: SMD Case: SOT363 Kind of package: reel; tape Power dissipation: 0.35W Polarisation: unipolar Gate charge: 1.3nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 4A Drain-source voltage: 30V Drain current: 0.5A On-state resistance: 1Ω Type of transistor: N-MOSFET |
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DMN32D4SDW-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 500mA; Idm: 4A; 350mW; SOT363 Mounting: SMD Case: SOT363 Kind of package: reel; tape Power dissipation: 0.35W Polarisation: unipolar Gate charge: 1.3nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 4A Drain-source voltage: 30V Drain current: 0.5A On-state resistance: 1Ω Type of transistor: N-MOSFET |
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| DMN31D5UFZ-7B | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 150mA; Idm: 0.5A; 393mW Mounting: SMD Kind of package: reel; tape On-state resistance: 4.5Ω Type of transistor: N-MOSFET Power dissipation: 393mW Polarisation: unipolar Gate charge: 0.35nC Case: X2-DFN0606-3 Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: 0.5A Drain-source voltage: 30V Drain current: 0.15A |
Produkt ist nicht verfügbar |
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SMBJ54A-13-F | DIODES INCORPORATED |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 600W; 60÷69V; 6.9A; unidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 54V Breakdown voltage: 60...69V Max. forward impulse current: 6.9A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
auf Bestellung 220 Stücke: Lieferzeit 14-21 Tag (e) |
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SMBJ54CA-13-F | DIODES INCORPORATED |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 600W; 60÷69V; 6.9A; bidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 54V Breakdown voltage: 60...69V Max. forward impulse current: 6.9A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
auf Bestellung 700 Stücke: Lieferzeit 14-21 Tag (e) |
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ZXTP25040DFHTA | DIODES INCORPORATED |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 40V; 3A; 730mW; SOT23 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 3A Power dissipation: 0.73W Case: SOT23 Current gain: 300...900 Mounting: SMD Kind of package: reel; tape Frequency: 270MHz |
Produkt ist nicht verfügbar |
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| DMT47M2LDV-7 | DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 40V; 9.5A; Idm: 120A; 14.8W Mounting: SMD Case: PowerDI3333-8 Kind of package: reel; tape Pulsed drain current: 120A Power dissipation: 14.8W Gate charge: 14nC Polarisation: unipolar Drain current: 9.5A Kind of channel: enhanced Drain-source voltage: 40V Type of transistor: N-MOSFET x2 On-state resistance: 15mΩ Gate-source voltage: ±20V |
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| DMT47M2LDVQ-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 9.5A; Idm: 120A; 2.34W Mounting: SMD Case: PowerDI3333-8 Kind of package: reel; tape Pulsed drain current: 120A Power dissipation: 2.34W Gate charge: 14nC Polarisation: unipolar Drain current: 9.5A Kind of channel: enhanced Drain-source voltage: 40V Type of transistor: N-MOSFET On-state resistance: 15mΩ Gate-source voltage: ±20V |
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| DMT47M2SFVW-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 12.3A; Idm: 196A; 2.67W Mounting: SMD Drain-source voltage: 40V Drain current: 12.3A On-state resistance: 7.5mΩ Type of transistor: N-MOSFET Power dissipation: 2.67W Polarisation: unipolar Kind of package: reel; tape Gate charge: 12.1nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 196A Case: PowerDI3333-8 |
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| DMT47M2SFVWQ-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 12.3A; Idm: 196A; 2.67W Mounting: SMD Drain-source voltage: 40V Drain current: 12.3A On-state resistance: 7.5mΩ Type of transistor: N-MOSFET Power dissipation: 2.67W Polarisation: unipolar Kind of package: reel; tape Gate charge: 12.1nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 196A Case: PowerDI3333-8 |
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| DMN4026SK3-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 18A; Idm: 70A; 2.1W; TO252 Kind of package: reel; tape Drain-source voltage: 40V Drain current: 18A On-state resistance: 32mΩ Type of transistor: N-MOSFET Power dissipation: 2.1W Polarisation: unipolar Gate charge: 21.3nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 70A Mounting: SMD Case: TO252 |
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DMN4026SSD-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 7.2A; Idm: 70A; 1.1W; SO8 Polarisation: unipolar On-state resistance: 32mΩ Kind of package: reel; tape Drain current: 7.2A Drain-source voltage: 40V Case: SO8 Gate charge: 43nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 70A Type of transistor: N-MOSFET Mounting: SMD Power dissipation: 1.1W |
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DMN4026SSDQ-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 7.2A; Idm: 70A; 1.1W; SO8 Kind of package: reel; tape Drain-source voltage: 40V Drain current: 7.2A On-state resistance: 32mΩ Type of transistor: N-MOSFET Power dissipation: 1.1W Polarisation: unipolar Gate charge: 43nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 70A Mounting: SMD Case: SO8 |
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| DT1140-04LP-7 | DIODES INCORPORATED |
Category: Transil diodes - arrays Description: Diode: TVS array; 6V; 6A; 60W; U-DFN2510-10; Ch: 4; reel,tape Mounting: SMD Case: U-DFN2510-10 Leakage current: 50nA Breakdown voltage: 6V Max. forward impulse current: 6A Max. off-state voltage: 5.5V Capacitance: 0.5pF Type of diode: TVS array Features of semiconductor devices: ESD protection Kind of package: reel; tape Peak pulse power dissipation: 60W Application: Ethernet; USB Number of channels: 4 |
Produkt ist nicht verfügbar |
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SMAJ6.5CA-13-F | DIODES INCORPORATED |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 400W; 7.22÷7.98V; 35.7A; bidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 6.5V Breakdown voltage: 7.22...7.98V Max. forward impulse current: 35.7A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Leakage current: 1mA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
auf Bestellung 4465 Stücke: Lieferzeit 14-21 Tag (e) |
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SMAJ40CA-13-F | DIODES INCORPORATED |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 400W; 44.4÷49.1V; 6.2A; bidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 40V Breakdown voltage: 44.4...49.1V Max. forward impulse current: 6.2A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
auf Bestellung 379 Stücke: Lieferzeit 14-21 Tag (e) |
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DMG4511SK4-13 | DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 35/-35V Mounting: SMD On-state resistance: 0.035/0.045Ω Type of transistor: N/P-MOSFET Power dissipation: 1.54W Polarisation: unipolar Kind of package: reel; tape Kind of transistor: complementary pair Kind of channel: enhanced Gate-source voltage: ±20V Case: TO252-4 Semiconductor structure: common drain Drain-source voltage: 35/-35V Drain current: 7.8/-8.6A |
auf Bestellung 2463 Stücke: Lieferzeit 14-21 Tag (e) |
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| AP62250Z6-7 | DIODES INCORPORATED |
Category: Voltage regulators - DC/DC circuits Description: IC: PMIC; DC/DC converter; Uin: 4.2÷18VDC; Uout: 0.8÷7VDC; 2.5A Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC converter Input voltage: 4.2...18V DC Output voltage: 0.8...7V DC Output current: 2.5A Case: SOT563 Mounting: SMD Frequency: 1.3MHz Topology: buck Operating temperature: -40...85°C Kind of package: reel; tape |
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SMCJ85CA-13-F | DIODES INCORPORATED |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 1.5kW; 94.4÷104V; 10.4A; bidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 85V Breakdown voltage: 94.4...104V Max. forward impulse current: 10.4A Semiconductor structure: bidirectional Case: SMC Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
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SMCJ18CA-13-F | DIODES INCORPORATED |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 1.5kW; 20÷22.1V; 51.4A; bidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 18V Breakdown voltage: 20...22.1V Max. forward impulse current: 51.4A Semiconductor structure: bidirectional Case: SMC Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
Produkt ist nicht verfügbar |
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| DMG7401SFG-13 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -10.8A; Idm: -80A; 1.3W Case: PowerDI3333-8 Mounting: SMD Kind of package: reel; tape Drain-source voltage: -30V Drain current: -10.8A On-state resistance: 25mΩ Type of transistor: P-MOSFET Power dissipation: 1.3W Polarisation: unipolar Gate charge: 58nC Kind of channel: enhanced Gate-source voltage: ±25V Pulsed drain current: -80A |
Produkt ist nicht verfügbar |
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| DMG7401SFG-7 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -10.8A; Idm: -80A; 1.3W Case: PowerDI3333-8 Mounting: SMD Kind of package: reel; tape Drain-source voltage: -30V Drain current: -10.8A On-state resistance: 25mΩ Type of transistor: P-MOSFET Power dissipation: 1.3W Polarisation: unipolar Gate charge: 58nC Kind of channel: enhanced Gate-source voltage: ±25V Pulsed drain current: -80A |
Produkt ist nicht verfügbar |
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| DMP3011SFVWQ-13 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -12A; Idm: -176A; 2.25W Mounting: SMD Pulsed drain current: -176A Power dissipation: 2.25W Gate charge: 46nC Polarisation: unipolar Drain current: -12A Kind of channel: enhanced Drain-source voltage: -30V Type of transistor: P-MOSFET Kind of package: reel; tape Case: PowerDI3333-8 On-state resistance: 18mΩ Gate-source voltage: ±25V |
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| 74AHCT1G32SE-7 | DIODES INCORPORATED |
Category: Gates, inverters Description: IC: digital; OR; Ch: 1; IN: 2; CMOS,TTL; SMD; SOT353; 4.5÷5.5VDC; AHCT Type of integrated circuit: digital Kind of gate: OR Number of channels: 1 Number of inputs: 2 Technology: CMOS; TTL Mounting: SMD Case: SOT353 Supply voltage: 4.5...5.5V DC Operating temperature: -40...150°C Kind of package: reel; tape Kind of input: with Schmitt trigger Kind of output: totem pole Family: AHCT |
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| 74AUP1G08FS3-7 | DIODES INCORPORATED |
Category: Gates, inverters Description: IC: digital; AND; Ch: 1; IN: 2; CMOS; SMD; X2-DFN0808-4; 0.8÷3.6VDC Case: X2-DFN0808-4 Technology: CMOS Mounting: SMD Kind of package: reel; tape Supply voltage: 0.8...3.6V DC Type of integrated circuit: digital Number of channels: 1 Kind of output: push-pull Kind of input: with Schmitt trigger Kind of gate: AND Number of inputs: 2 Family: AUP Operating temperature: -40...150°C |
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| 74AUP1G08FW5-7 | DIODES INCORPORATED |
Category: Gates, inverters Description: IC: digital; AND; Ch: 1; IN: 2; CMOS; SMD; X1-DFN1010-6; 0.8÷3.6VDC Case: X1-DFN1010-6 Technology: CMOS Mounting: SMD Kind of package: reel; tape Supply voltage: 0.8...3.6V DC Type of integrated circuit: digital Number of channels: 1 Kind of output: push-pull Kind of input: with Schmitt trigger Kind of gate: AND Number of inputs: 2 Family: AUP Operating temperature: -40...150°C |
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| 74AUP1G08FX4-7 | DIODES INCORPORATED |
Category: Gates, inverters Description: IC: digital; AND; Ch: 1; IN: 2; CMOS; SMD; X2-DFN1409-6; 0.8÷3.6VDC Case: X2-DFN1409-6 Technology: CMOS Mounting: SMD Kind of package: reel; tape Supply voltage: 0.8...3.6V DC Type of integrated circuit: digital Number of channels: 1 Kind of output: push-pull Kind of input: with Schmitt trigger Kind of gate: AND Number of inputs: 2 Family: AUP Operating temperature: -40...150°C |
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| 74AUP1G08FZ4-7 | DIODES INCORPORATED |
Category: Gates, inverters Description: IC: digital; AND; Ch: 1; IN: 2; CMOS; SMD; X2-DFN1410-6; 0.8÷3.6VDC Case: X2-DFN1410-6 Technology: CMOS Mounting: SMD Kind of package: reel; tape Supply voltage: 0.8...3.6V DC Type of integrated circuit: digital Number of channels: 1 Kind of output: push-pull Kind of input: with Schmitt trigger Kind of gate: AND Number of inputs: 2 Family: AUP Operating temperature: -40...150°C |
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| 74AUP1G08SE-7 | DIODES INCORPORATED |
Category: Gates, inverters Description: IC: digital; AND; Ch: 1; IN: 2; CMOS; SMD; SOT353; 0.8÷3.6VDC; AUP Case: SOT353 Technology: CMOS Mounting: SMD Kind of package: reel; tape Supply voltage: 0.8...3.6V DC Type of integrated circuit: digital Number of channels: 1 Kind of output: push-pull Kind of input: with Schmitt trigger Kind of gate: AND Number of inputs: 2 Family: AUP Operating temperature: -40...150°C |
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74AHCT1G08SE-7 | DIODES INCORPORATED |
Category: Gates, inverters Description: IC: digital; AND; Ch: 1; IN: 2; SMD; SOT353; 4.5÷5.5VDC; -40÷125°C Mounting: SMD Kind of package: reel; tape Case: SOT353 Type of integrated circuit: digital Number of channels: single; 1 Kind of output: totem pole Supply voltage: 4.5...5.5V DC Number of inputs: 2 Operating temperature: -40...125°C Kind of gate: AND Family: AHCT |
auf Bestellung 3115 Stücke: Lieferzeit 14-21 Tag (e) |
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| AP22804AM8-13 | DIODES INCORPORATED |
Category: Power switches - integrated circuits Description: IC: power switch; high-side,USB switch; 2.5A; Ch: 1; P-Channel; SMD Type of integrated circuit: power switch Kind of integrated circuit: high-side; USB switch Case: MSOP8 Output current: 2.5A Number of channels: 1 Supply voltage: 2.7...5.5V DC Mounting: SMD On-state resistance: 50mΩ Kind of package: reel; tape Kind of output: P-Channel Active logical level: high |
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| AP22804ASN-7 | DIODES INCORPORATED |
Category: Power switches - integrated circuits Description: IC: power switch; high-side,USB switch; 2.5A; Ch: 1; P-Channel; SMD Type of integrated circuit: power switch Kind of integrated circuit: high-side; USB switch Case: U-DFN2020-6 Output current: 2.5A Number of channels: 1 Supply voltage: 2.7...5.5V DC Mounting: SMD On-state resistance: 50mΩ Kind of package: reel; tape Kind of output: P-Channel Active logical level: high |
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AP22804AW5-7 | DIODES INCORPORATED |
Category: Power switches - integrated circuits Description: IC: power switch; high-side,USB switch; 2.5A; Ch: 1; P-Channel; SMD Type of integrated circuit: power switch Kind of integrated circuit: high-side; USB switch Case: SOT25 Output current: 2.5A Number of channels: 1 Supply voltage: 2.7...5.5V DC Mounting: SMD On-state resistance: 50mΩ Kind of package: reel; tape Kind of output: P-Channel Active logical level: high |
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| AP22804BSN-7 | DIODES INCORPORATED |
Category: Power switches - integrated circuits Description: IC: power switch; high-side,USB switch; 2.5A; Ch: 1; P-Channel; SMD Type of integrated circuit: power switch Kind of integrated circuit: high-side; USB switch Output current: 2.5A Number of channels: 1 Kind of output: P-Channel Mounting: SMD Case: U-DFN2020-6 On-state resistance: 50mΩ Kind of package: reel; tape Supply voltage: 2.7...5.5V DC Active logical level: low |
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AP22804BW5-7 | DIODES INCORPORATED |
Category: Power switches - integrated circuits Description: IC: power switch; high-side,USB switch; 2.5A; Ch: 1; P-Channel; SMD Type of integrated circuit: power switch Kind of integrated circuit: high-side; USB switch Output current: 2.5A Number of channels: 1 Kind of output: P-Channel Mounting: SMD Case: SOT25 On-state resistance: 50mΩ Kind of package: reel; tape Supply voltage: 2.7...5.5V DC Active logical level: low |
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ZVN4525E6TA | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 0.23A; 1.1W; SOT26 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 0.23A Power dissipation: 1.1W Case: SOT26 Gate-source voltage: ±40V On-state resistance: 8.5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
auf Bestellung 3072 Stücke: Lieferzeit 14-21 Tag (e) |
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DZ23C10-7-F | DIODES INCORPORATED |
Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 10V; SMD; reel,tape; SOT23; 100nA Type of diode: Zener Power dissipation: 0.3W Zener voltage: 10V Mounting: SMD Tolerance: ±6% Kind of package: reel; tape Case: SOT23 Semiconductor structure: common cathode; double Leakage current: 0.1µA |
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DZ23C12-7-F | DIODES INCORPORATED |
Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 12V; SMD; reel,tape; SOT23 Type of diode: Zener Power dissipation: 0.3W Zener voltage: 12V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOT23 Semiconductor structure: common cathode; double |
auf Bestellung 2089 Stücke: Lieferzeit 14-21 Tag (e) |
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DZ23C18-7-F | DIODES INCORPORATED |
Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 18V; SMD; reel,tape; SOT23 Type of diode: Zener Power dissipation: 0.3W Zener voltage: 18V Mounting: SMD Tolerance: ±6.5% Kind of package: reel; tape Case: SOT23 Semiconductor structure: common cathode; double |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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DZ23C27-7-F | DIODES INCORPORATED |
Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 27V; SMD; reel,tape; SOT23; 100nA Type of diode: Zener Power dissipation: 0.3W Zener voltage: 27V Mounting: SMD Tolerance: ±7% Kind of package: reel; tape Case: SOT23 Semiconductor structure: common cathode; double Leakage current: 0.1µA |
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DZ23C33-7-F | DIODES INCORPORATED |
Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 33V; SMD; reel,tape; SOT23; 100nA Type of diode: Zener Power dissipation: 0.3W Zener voltage: 33V Mounting: SMD Tolerance: ±6% Kind of package: reel; tape Case: SOT23 Semiconductor structure: common cathode; double Leakage current: 0.1µA |
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DZ23C39-7-F | DIODES INCORPORATED |
Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 39V; SMD; reel,tape; SOT23; 100nA Type of diode: Zener Power dissipation: 0.3W Zener voltage: 39V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOT23 Semiconductor structure: common cathode; double Leakage current: 0.1µA |
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DZ23C7V5-7-F | DIODES INCORPORATED |
Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 7.5V; SMD; reel,tape; SOT23; 100nA Type of diode: Zener Power dissipation: 0.3W Zener voltage: 7.5V Mounting: SMD Tolerance: ±6% Kind of package: reel; tape Case: SOT23 Semiconductor structure: common cathode; double Leakage current: 0.1µA |
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DMG4822SSD-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 6.6A; Idm: 60A; 1.42W; SO8 Polarisation: unipolar Power dissipation: 1.42W Kind of package: reel; tape Gate charge: 10.5nC Kind of channel: enhanced Gate-source voltage: ±25V Pulsed drain current: 60A Mounting: SMD Case: SO8 Drain-source voltage: 30V Drain current: 6.6A On-state resistance: 31mΩ Type of transistor: N-MOSFET |
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DMG6898LSD-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 7.1A; Idm: 30A; 1.28W; SO8 Polarisation: unipolar On-state resistance: 23mΩ Kind of package: reel; tape Drain current: 7.1A Drain-source voltage: 20V Case: SO8 Gate charge: 26nC Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: 30A Type of transistor: N-MOSFET Mounting: SMD Power dissipation: 1.28W |
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DMN2029USD-13 | DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 20V; 4.8A; 0.7W; SO8 Polarisation: unipolar On-state resistance: 35mΩ Kind of package: reel; tape Drain current: 4.8A Drain-source voltage: 20V Case: SO8 Kind of channel: enhanced Gate-source voltage: ±8V Type of transistor: N-MOSFET x2 Mounting: SMD Power dissipation: 0.7W |
Produkt ist nicht verfügbar |
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DMN2041LSD-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 4.92A; Idm: 30A; 1.16W; SO8 Polarisation: unipolar On-state resistance: 41mΩ Kind of package: reel; tape Drain current: 4.92A Drain-source voltage: 20V Case: SO8 Gate charge: 15.6nC Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: 30A Type of transistor: N-MOSFET Mounting: SMD Power dissipation: 1.16W |
Produkt ist nicht verfügbar |
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DMN3024LSD-13 | DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30V; 5.8A; 1.3W; SO8 Polarisation: unipolar On-state resistance: 36mΩ Kind of package: reel; tape Drain current: 5.8A Drain-source voltage: 30V Case: SO8 Kind of channel: enhanced Gate-source voltage: ±20V Type of transistor: N-MOSFET x2 Mounting: SMD Power dissipation: 1.3W |
auf Bestellung 344 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN4027SSD-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 5.7A; Idm: 28A; 2.14W; SO8 Polarisation: unipolar On-state resistance: 47mΩ Kind of package: reel; tape Drain current: 5.7A Drain-source voltage: 40V Case: SO8 Gate charge: 12.9nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 28A Type of transistor: N-MOSFET Mounting: SMD Power dissipation: 2.14W |
Produkt ist nicht verfügbar |
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DMN4031SSD-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 5.6A; Idm: 40A; 2.6W; SO8 Polarisation: unipolar On-state resistance: 50mΩ Kind of package: reel; tape Drain current: 5.6A Drain-source voltage: 40V Case: SO8 Gate charge: 18.6nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 40A Type of transistor: N-MOSFET Mounting: SMD Power dissipation: 2.6W |
Produkt ist nicht verfügbar |
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DMN4034SSD-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 5A; Idm: 24.8A; 2.14W; SO8 Polarisation: unipolar On-state resistance: 59mΩ Kind of package: reel; tape Drain current: 5A Drain-source voltage: 40V Case: SO8 Gate charge: 18nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 24.8A Type of transistor: N-MOSFET Mounting: SMD Power dissipation: 2.14W |
Produkt ist nicht verfügbar |
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DMN6022SSD-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 5A; Idm: 45A; 1.5W; SO8 Kind of package: reel; tape Mounting: SMD Case: SO8 Drain-source voltage: 60V Drain current: 5A On-state resistance: 34mΩ Type of transistor: N-MOSFET Power dissipation: 1.5W Polarisation: unipolar Gate charge: 32nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 45A |
Produkt ist nicht verfügbar |
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DMN6066SSD-13 | DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 60V; 3.5A; Idm: 17A; 2.14W; SO8 Kind of package: reel; tape Mounting: SMD Case: SO8 Drain-source voltage: 60V Drain current: 3.5A On-state resistance: 97mΩ Type of transistor: N-MOSFET x2 Power dissipation: 2.14W Polarisation: unipolar Gate charge: 10.3nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 17A |
Produkt ist nicht verfügbar |
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DMN6070SSD-13 | DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 60V; 3.6A; 1.2W; SO8 Polarisation: unipolar On-state resistance: 0.1Ω Kind of package: reel; tape Drain current: 3.6A Drain-source voltage: 60V Case: SO8 Kind of channel: enhanced Gate-source voltage: ±20V Type of transistor: N-MOSFET x2 Mounting: SMD Power dissipation: 1.2W |
auf Bestellung 2024 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP58D0LFB-7 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -50V; -250mA; Idm: -0.5A; 1.22W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -50V Drain current: -0.25A Pulsed drain current: -0.5A Power dissipation: 1.22W Case: X1-DFN1006-3 Gate-source voltage: ±20V On-state resistance: 18Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| DMN3020UFDF-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 8.3A; Idm: 40A; 1.3W Type of transistor: N-MOSFET Case: U-DFN2020-6 Mounting: SMD Power dissipation: 1.3W Kind of package: reel; tape Polarisation: unipolar Gate charge: 27nC Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: 40A Drain-source voltage: 30V Drain current: 8.3A On-state resistance: 0.12Ω |
Produkt ist nicht verfügbar |
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SMAJ200CA-13-F | DIODES INCORPORATED |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 400W; 224÷248V; 1.2A; bidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 200V Breakdown voltage: 224...248V Max. forward impulse current: 1.2A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
Produkt ist nicht verfügbar |
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| AZ2185D-ADJTRG1 | DIODES INCORPORATED |
Category: LDO regulated voltage regulators Description: IC: voltage regulator; LDO,linear,adjustable; 3A; TO252; SMD; ±1% Type of integrated circuit: voltage regulator Kind of voltage regulator: adjustable; LDO; linear Voltage drop: 1.5V Output current: 3A Case: TO252 Mounting: SMD Operating temperature: -40...125°C Tolerance: ±1% Number of channels: 1 Input voltage: 1.25...12V Manufacturer series: AZ2185 |
Produkt ist nicht verfügbar |
| DMT12H065LFDF-13 |
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Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 115V; 3.4A; Idm: 25A; 1.2W
On-state resistance: 0.35Ω
Type of transistor: N-MOSFET
Power dissipation: 1.2W
Polarisation: unipolar
Kind of package: reel; tape
Mounting: SMD
Gate charge: 5.5nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Case: U-DFN2020-6
Pulsed drain current: 25A
Drain-source voltage: 115V
Drain current: 3.4A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 115V; 3.4A; Idm: 25A; 1.2W
On-state resistance: 0.35Ω
Type of transistor: N-MOSFET
Power dissipation: 1.2W
Polarisation: unipolar
Kind of package: reel; tape
Mounting: SMD
Gate charge: 5.5nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Case: U-DFN2020-6
Pulsed drain current: 25A
Drain-source voltage: 115V
Drain current: 3.4A
Produkt ist nicht verfügbar
| US1K-13-F |
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Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 1A; 75ns; SMA; Ufmax: 1.7V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.8kV
Load current: 1A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Case: SMA
Max. forward voltage: 1.7V
Max. forward impulse current: 30A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 1A; 75ns; SMA; Ufmax: 1.7V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.8kV
Load current: 1A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Case: SMA
Max. forward voltage: 1.7V
Max. forward impulse current: 30A
Kind of package: reel; tape
auf Bestellung 3366 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 340+ | 0.21 EUR |
| 895+ | 0.08 EUR |
| 1020+ | 0.07 EUR |
| 1135+ | 0.063 EUR |
| 1200+ | 0.06 EUR |
| DMN32D4SDW-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 500mA; Idm: 4A; 350mW; SOT363
Mounting: SMD
Case: SOT363
Kind of package: reel; tape
Power dissipation: 0.35W
Polarisation: unipolar
Gate charge: 1.3nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 4A
Drain-source voltage: 30V
Drain current: 0.5A
On-state resistance: 1Ω
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 500mA; Idm: 4A; 350mW; SOT363
Mounting: SMD
Case: SOT363
Kind of package: reel; tape
Power dissipation: 0.35W
Polarisation: unipolar
Gate charge: 1.3nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 4A
Drain-source voltage: 30V
Drain current: 0.5A
On-state resistance: 1Ω
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
| DMN32D4SDW-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 500mA; Idm: 4A; 350mW; SOT363
Mounting: SMD
Case: SOT363
Kind of package: reel; tape
Power dissipation: 0.35W
Polarisation: unipolar
Gate charge: 1.3nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 4A
Drain-source voltage: 30V
Drain current: 0.5A
On-state resistance: 1Ω
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 500mA; Idm: 4A; 350mW; SOT363
Mounting: SMD
Case: SOT363
Kind of package: reel; tape
Power dissipation: 0.35W
Polarisation: unipolar
Gate charge: 1.3nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 4A
Drain-source voltage: 30V
Drain current: 0.5A
On-state resistance: 1Ω
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
| DMN31D5UFZ-7B |
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Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 150mA; Idm: 0.5A; 393mW
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 4.5Ω
Type of transistor: N-MOSFET
Power dissipation: 393mW
Polarisation: unipolar
Gate charge: 0.35nC
Case: X2-DFN0606-3
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 0.5A
Drain-source voltage: 30V
Drain current: 0.15A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 150mA; Idm: 0.5A; 393mW
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 4.5Ω
Type of transistor: N-MOSFET
Power dissipation: 393mW
Polarisation: unipolar
Gate charge: 0.35nC
Case: X2-DFN0606-3
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 0.5A
Drain-source voltage: 30V
Drain current: 0.15A
Produkt ist nicht verfügbar
| SMBJ54A-13-F |
|
Hersteller: DIODES INCORPORATED
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 60÷69V; 6.9A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 54V
Breakdown voltage: 60...69V
Max. forward impulse current: 6.9A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 60÷69V; 6.9A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 54V
Breakdown voltage: 60...69V
Max. forward impulse current: 6.9A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 220 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 220+ | 0.33 EUR |
| SMBJ54CA-13-F |
|
Hersteller: DIODES INCORPORATED
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 60÷69V; 6.9A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 54V
Breakdown voltage: 60...69V
Max. forward impulse current: 6.9A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 60÷69V; 6.9A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 54V
Breakdown voltage: 60...69V
Max. forward impulse current: 6.9A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 700 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 295+ | 0.24 EUR |
| 495+ | 0.15 EUR |
| 560+ | 0.13 EUR |
| 600+ | 0.12 EUR |
| 635+ | 0.11 EUR |
| ZXTP25040DFHTA |
|
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 3A; 730mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 3A
Power dissipation: 0.73W
Case: SOT23
Current gain: 300...900
Mounting: SMD
Kind of package: reel; tape
Frequency: 270MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 3A; 730mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 3A
Power dissipation: 0.73W
Case: SOT23
Current gain: 300...900
Mounting: SMD
Kind of package: reel; tape
Frequency: 270MHz
Produkt ist nicht verfügbar
| DMT47M2LDV-7 |
|
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 9.5A; Idm: 120A; 14.8W
Mounting: SMD
Case: PowerDI3333-8
Kind of package: reel; tape
Pulsed drain current: 120A
Power dissipation: 14.8W
Gate charge: 14nC
Polarisation: unipolar
Drain current: 9.5A
Kind of channel: enhanced
Drain-source voltage: 40V
Type of transistor: N-MOSFET x2
On-state resistance: 15mΩ
Gate-source voltage: ±20V
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 9.5A; Idm: 120A; 14.8W
Mounting: SMD
Case: PowerDI3333-8
Kind of package: reel; tape
Pulsed drain current: 120A
Power dissipation: 14.8W
Gate charge: 14nC
Polarisation: unipolar
Drain current: 9.5A
Kind of channel: enhanced
Drain-source voltage: 40V
Type of transistor: N-MOSFET x2
On-state resistance: 15mΩ
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
| DMT47M2LDVQ-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 9.5A; Idm: 120A; 2.34W
Mounting: SMD
Case: PowerDI3333-8
Kind of package: reel; tape
Pulsed drain current: 120A
Power dissipation: 2.34W
Gate charge: 14nC
Polarisation: unipolar
Drain current: 9.5A
Kind of channel: enhanced
Drain-source voltage: 40V
Type of transistor: N-MOSFET
On-state resistance: 15mΩ
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 9.5A; Idm: 120A; 2.34W
Mounting: SMD
Case: PowerDI3333-8
Kind of package: reel; tape
Pulsed drain current: 120A
Power dissipation: 2.34W
Gate charge: 14nC
Polarisation: unipolar
Drain current: 9.5A
Kind of channel: enhanced
Drain-source voltage: 40V
Type of transistor: N-MOSFET
On-state resistance: 15mΩ
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
| DMT47M2SFVW-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 12.3A; Idm: 196A; 2.67W
Mounting: SMD
Drain-source voltage: 40V
Drain current: 12.3A
On-state resistance: 7.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.67W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 12.1nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 196A
Case: PowerDI3333-8
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 12.3A; Idm: 196A; 2.67W
Mounting: SMD
Drain-source voltage: 40V
Drain current: 12.3A
On-state resistance: 7.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.67W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 12.1nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 196A
Case: PowerDI3333-8
Produkt ist nicht verfügbar
| DMT47M2SFVWQ-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 12.3A; Idm: 196A; 2.67W
Mounting: SMD
Drain-source voltage: 40V
Drain current: 12.3A
On-state resistance: 7.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.67W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 12.1nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 196A
Case: PowerDI3333-8
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 12.3A; Idm: 196A; 2.67W
Mounting: SMD
Drain-source voltage: 40V
Drain current: 12.3A
On-state resistance: 7.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.67W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 12.1nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 196A
Case: PowerDI3333-8
Produkt ist nicht verfügbar
| DMN4026SK3-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 18A; Idm: 70A; 2.1W; TO252
Kind of package: reel; tape
Drain-source voltage: 40V
Drain current: 18A
On-state resistance: 32mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.1W
Polarisation: unipolar
Gate charge: 21.3nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 70A
Mounting: SMD
Case: TO252
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 18A; Idm: 70A; 2.1W; TO252
Kind of package: reel; tape
Drain-source voltage: 40V
Drain current: 18A
On-state resistance: 32mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.1W
Polarisation: unipolar
Gate charge: 21.3nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 70A
Mounting: SMD
Case: TO252
Produkt ist nicht verfügbar
| DMN4026SSD-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 7.2A; Idm: 70A; 1.1W; SO8
Polarisation: unipolar
On-state resistance: 32mΩ
Kind of package: reel; tape
Drain current: 7.2A
Drain-source voltage: 40V
Case: SO8
Gate charge: 43nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 70A
Type of transistor: N-MOSFET
Mounting: SMD
Power dissipation: 1.1W
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 7.2A; Idm: 70A; 1.1W; SO8
Polarisation: unipolar
On-state resistance: 32mΩ
Kind of package: reel; tape
Drain current: 7.2A
Drain-source voltage: 40V
Case: SO8
Gate charge: 43nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 70A
Type of transistor: N-MOSFET
Mounting: SMD
Power dissipation: 1.1W
Produkt ist nicht verfügbar
| DMN4026SSDQ-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 7.2A; Idm: 70A; 1.1W; SO8
Kind of package: reel; tape
Drain-source voltage: 40V
Drain current: 7.2A
On-state resistance: 32mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.1W
Polarisation: unipolar
Gate charge: 43nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 70A
Mounting: SMD
Case: SO8
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 7.2A; Idm: 70A; 1.1W; SO8
Kind of package: reel; tape
Drain-source voltage: 40V
Drain current: 7.2A
On-state resistance: 32mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.1W
Polarisation: unipolar
Gate charge: 43nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 70A
Mounting: SMD
Case: SO8
Produkt ist nicht verfügbar
| DT1140-04LP-7 |
|
Hersteller: DIODES INCORPORATED
Category: Transil diodes - arrays
Description: Diode: TVS array; 6V; 6A; 60W; U-DFN2510-10; Ch: 4; reel,tape
Mounting: SMD
Case: U-DFN2510-10
Leakage current: 50nA
Breakdown voltage: 6V
Max. forward impulse current: 6A
Max. off-state voltage: 5.5V
Capacitance: 0.5pF
Type of diode: TVS array
Features of semiconductor devices: ESD protection
Kind of package: reel; tape
Peak pulse power dissipation: 60W
Application: Ethernet; USB
Number of channels: 4
Category: Transil diodes - arrays
Description: Diode: TVS array; 6V; 6A; 60W; U-DFN2510-10; Ch: 4; reel,tape
Mounting: SMD
Case: U-DFN2510-10
Leakage current: 50nA
Breakdown voltage: 6V
Max. forward impulse current: 6A
Max. off-state voltage: 5.5V
Capacitance: 0.5pF
Type of diode: TVS array
Features of semiconductor devices: ESD protection
Kind of package: reel; tape
Peak pulse power dissipation: 60W
Application: Ethernet; USB
Number of channels: 4
Produkt ist nicht verfügbar
| SMAJ6.5CA-13-F |
|
Hersteller: DIODES INCORPORATED
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 400W; 7.22÷7.98V; 35.7A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 6.5V
Breakdown voltage: 7.22...7.98V
Max. forward impulse current: 35.7A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 400W; 7.22÷7.98V; 35.7A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 6.5V
Breakdown voltage: 7.22...7.98V
Max. forward impulse current: 35.7A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 4465 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 305+ | 0.24 EUR |
| 670+ | 0.11 EUR |
| 750+ | 0.096 EUR |
| 855+ | 0.084 EUR |
| 905+ | 0.079 EUR |
| SMAJ40CA-13-F |
|
Hersteller: DIODES INCORPORATED
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 400W; 44.4÷49.1V; 6.2A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 40V
Breakdown voltage: 44.4...49.1V
Max. forward impulse current: 6.2A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 400W; 44.4÷49.1V; 6.2A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 40V
Breakdown voltage: 44.4...49.1V
Max. forward impulse current: 6.2A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 379 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 305+ | 0.24 EUR |
| DMG4511SK4-13 |
|
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 35/-35V
Mounting: SMD
On-state resistance: 0.035/0.045Ω
Type of transistor: N/P-MOSFET
Power dissipation: 1.54W
Polarisation: unipolar
Kind of package: reel; tape
Kind of transistor: complementary pair
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: TO252-4
Semiconductor structure: common drain
Drain-source voltage: 35/-35V
Drain current: 7.8/-8.6A
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 35/-35V
Mounting: SMD
On-state resistance: 0.035/0.045Ω
Type of transistor: N/P-MOSFET
Power dissipation: 1.54W
Polarisation: unipolar
Kind of package: reel; tape
Kind of transistor: complementary pair
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: TO252-4
Semiconductor structure: common drain
Drain-source voltage: 35/-35V
Drain current: 7.8/-8.6A
auf Bestellung 2463 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 65+ | 1.1 EUR |
| 137+ | 0.52 EUR |
| 152+ | 0.47 EUR |
| 158+ | 0.45 EUR |
| 163+ | 0.44 EUR |
| 167+ | 0.43 EUR |
| 500+ | 0.41 EUR |
| AP62250Z6-7 |
|
Hersteller: DIODES INCORPORATED
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DC/DC converter; Uin: 4.2÷18VDC; Uout: 0.8÷7VDC; 2.5A
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.2...18V DC
Output voltage: 0.8...7V DC
Output current: 2.5A
Case: SOT563
Mounting: SMD
Frequency: 1.3MHz
Topology: buck
Operating temperature: -40...85°C
Kind of package: reel; tape
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DC/DC converter; Uin: 4.2÷18VDC; Uout: 0.8÷7VDC; 2.5A
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.2...18V DC
Output voltage: 0.8...7V DC
Output current: 2.5A
Case: SOT563
Mounting: SMD
Frequency: 1.3MHz
Topology: buck
Operating temperature: -40...85°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
| SMCJ85CA-13-F |
|
Hersteller: DIODES INCORPORATED
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 94.4÷104V; 10.4A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 85V
Breakdown voltage: 94.4...104V
Max. forward impulse current: 10.4A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 94.4÷104V; 10.4A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 85V
Breakdown voltage: 94.4...104V
Max. forward impulse current: 10.4A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
| SMCJ18CA-13-F |
|
Hersteller: DIODES INCORPORATED
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 20÷22.1V; 51.4A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 18V
Breakdown voltage: 20...22.1V
Max. forward impulse current: 51.4A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 20÷22.1V; 51.4A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 18V
Breakdown voltage: 20...22.1V
Max. forward impulse current: 51.4A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
| DMG7401SFG-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -10.8A; Idm: -80A; 1.3W
Case: PowerDI3333-8
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: -30V
Drain current: -10.8A
On-state resistance: 25mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.3W
Polarisation: unipolar
Gate charge: 58nC
Kind of channel: enhanced
Gate-source voltage: ±25V
Pulsed drain current: -80A
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -10.8A; Idm: -80A; 1.3W
Case: PowerDI3333-8
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: -30V
Drain current: -10.8A
On-state resistance: 25mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.3W
Polarisation: unipolar
Gate charge: 58nC
Kind of channel: enhanced
Gate-source voltage: ±25V
Pulsed drain current: -80A
Produkt ist nicht verfügbar
| DMG7401SFG-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -10.8A; Idm: -80A; 1.3W
Case: PowerDI3333-8
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: -30V
Drain current: -10.8A
On-state resistance: 25mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.3W
Polarisation: unipolar
Gate charge: 58nC
Kind of channel: enhanced
Gate-source voltage: ±25V
Pulsed drain current: -80A
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -10.8A; Idm: -80A; 1.3W
Case: PowerDI3333-8
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: -30V
Drain current: -10.8A
On-state resistance: 25mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.3W
Polarisation: unipolar
Gate charge: 58nC
Kind of channel: enhanced
Gate-source voltage: ±25V
Pulsed drain current: -80A
Produkt ist nicht verfügbar
| DMP3011SFVWQ-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -12A; Idm: -176A; 2.25W
Mounting: SMD
Pulsed drain current: -176A
Power dissipation: 2.25W
Gate charge: 46nC
Polarisation: unipolar
Drain current: -12A
Kind of channel: enhanced
Drain-source voltage: -30V
Type of transistor: P-MOSFET
Kind of package: reel; tape
Case: PowerDI3333-8
On-state resistance: 18mΩ
Gate-source voltage: ±25V
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -12A; Idm: -176A; 2.25W
Mounting: SMD
Pulsed drain current: -176A
Power dissipation: 2.25W
Gate charge: 46nC
Polarisation: unipolar
Drain current: -12A
Kind of channel: enhanced
Drain-source voltage: -30V
Type of transistor: P-MOSFET
Kind of package: reel; tape
Case: PowerDI3333-8
On-state resistance: 18mΩ
Gate-source voltage: ±25V
Produkt ist nicht verfügbar
| 74AHCT1G32SE-7 |
|
Hersteller: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; OR; Ch: 1; IN: 2; CMOS,TTL; SMD; SOT353; 4.5÷5.5VDC; AHCT
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: 1
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: SOT353
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Kind of output: totem pole
Family: AHCT
Category: Gates, inverters
Description: IC: digital; OR; Ch: 1; IN: 2; CMOS,TTL; SMD; SOT353; 4.5÷5.5VDC; AHCT
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: 1
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: SOT353
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Kind of output: totem pole
Family: AHCT
Produkt ist nicht verfügbar
| 74AUP1G08FS3-7 |
|
Hersteller: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; CMOS; SMD; X2-DFN0808-4; 0.8÷3.6VDC
Case: X2-DFN0808-4
Technology: CMOS
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 0.8...3.6V DC
Type of integrated circuit: digital
Number of channels: 1
Kind of output: push-pull
Kind of input: with Schmitt trigger
Kind of gate: AND
Number of inputs: 2
Family: AUP
Operating temperature: -40...150°C
Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; CMOS; SMD; X2-DFN0808-4; 0.8÷3.6VDC
Case: X2-DFN0808-4
Technology: CMOS
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 0.8...3.6V DC
Type of integrated circuit: digital
Number of channels: 1
Kind of output: push-pull
Kind of input: with Schmitt trigger
Kind of gate: AND
Number of inputs: 2
Family: AUP
Operating temperature: -40...150°C
Produkt ist nicht verfügbar
| 74AUP1G08FW5-7 |
|
Hersteller: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; CMOS; SMD; X1-DFN1010-6; 0.8÷3.6VDC
Case: X1-DFN1010-6
Technology: CMOS
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 0.8...3.6V DC
Type of integrated circuit: digital
Number of channels: 1
Kind of output: push-pull
Kind of input: with Schmitt trigger
Kind of gate: AND
Number of inputs: 2
Family: AUP
Operating temperature: -40...150°C
Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; CMOS; SMD; X1-DFN1010-6; 0.8÷3.6VDC
Case: X1-DFN1010-6
Technology: CMOS
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 0.8...3.6V DC
Type of integrated circuit: digital
Number of channels: 1
Kind of output: push-pull
Kind of input: with Schmitt trigger
Kind of gate: AND
Number of inputs: 2
Family: AUP
Operating temperature: -40...150°C
Produkt ist nicht verfügbar
| 74AUP1G08FX4-7 |
|
Hersteller: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; CMOS; SMD; X2-DFN1409-6; 0.8÷3.6VDC
Case: X2-DFN1409-6
Technology: CMOS
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 0.8...3.6V DC
Type of integrated circuit: digital
Number of channels: 1
Kind of output: push-pull
Kind of input: with Schmitt trigger
Kind of gate: AND
Number of inputs: 2
Family: AUP
Operating temperature: -40...150°C
Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; CMOS; SMD; X2-DFN1409-6; 0.8÷3.6VDC
Case: X2-DFN1409-6
Technology: CMOS
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 0.8...3.6V DC
Type of integrated circuit: digital
Number of channels: 1
Kind of output: push-pull
Kind of input: with Schmitt trigger
Kind of gate: AND
Number of inputs: 2
Family: AUP
Operating temperature: -40...150°C
Produkt ist nicht verfügbar
| 74AUP1G08FZ4-7 |
|
Hersteller: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; CMOS; SMD; X2-DFN1410-6; 0.8÷3.6VDC
Case: X2-DFN1410-6
Technology: CMOS
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 0.8...3.6V DC
Type of integrated circuit: digital
Number of channels: 1
Kind of output: push-pull
Kind of input: with Schmitt trigger
Kind of gate: AND
Number of inputs: 2
Family: AUP
Operating temperature: -40...150°C
Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; CMOS; SMD; X2-DFN1410-6; 0.8÷3.6VDC
Case: X2-DFN1410-6
Technology: CMOS
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 0.8...3.6V DC
Type of integrated circuit: digital
Number of channels: 1
Kind of output: push-pull
Kind of input: with Schmitt trigger
Kind of gate: AND
Number of inputs: 2
Family: AUP
Operating temperature: -40...150°C
Produkt ist nicht verfügbar
| 74AUP1G08SE-7 |
|
Hersteller: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; CMOS; SMD; SOT353; 0.8÷3.6VDC; AUP
Case: SOT353
Technology: CMOS
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 0.8...3.6V DC
Type of integrated circuit: digital
Number of channels: 1
Kind of output: push-pull
Kind of input: with Schmitt trigger
Kind of gate: AND
Number of inputs: 2
Family: AUP
Operating temperature: -40...150°C
Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; CMOS; SMD; SOT353; 0.8÷3.6VDC; AUP
Case: SOT353
Technology: CMOS
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 0.8...3.6V DC
Type of integrated circuit: digital
Number of channels: 1
Kind of output: push-pull
Kind of input: with Schmitt trigger
Kind of gate: AND
Number of inputs: 2
Family: AUP
Operating temperature: -40...150°C
Produkt ist nicht verfügbar
| 74AHCT1G08SE-7 |
|
Hersteller: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; SMD; SOT353; 4.5÷5.5VDC; -40÷125°C
Mounting: SMD
Kind of package: reel; tape
Case: SOT353
Type of integrated circuit: digital
Number of channels: single; 1
Kind of output: totem pole
Supply voltage: 4.5...5.5V DC
Number of inputs: 2
Operating temperature: -40...125°C
Kind of gate: AND
Family: AHCT
Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; SMD; SOT353; 4.5÷5.5VDC; -40÷125°C
Mounting: SMD
Kind of package: reel; tape
Case: SOT353
Type of integrated circuit: digital
Number of channels: single; 1
Kind of output: totem pole
Supply voltage: 4.5...5.5V DC
Number of inputs: 2
Operating temperature: -40...125°C
Kind of gate: AND
Family: AHCT
auf Bestellung 3115 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 667+ | 0.11 EUR |
| 1202+ | 0.059 EUR |
| 1370+ | 0.052 EUR |
| 1578+ | 0.045 EUR |
| 1667+ | 0.043 EUR |
| AP22804AM8-13 |
|
Hersteller: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2.5A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Case: MSOP8
Output current: 2.5A
Number of channels: 1
Supply voltage: 2.7...5.5V DC
Mounting: SMD
On-state resistance: 50mΩ
Kind of package: reel; tape
Kind of output: P-Channel
Active logical level: high
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2.5A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Case: MSOP8
Output current: 2.5A
Number of channels: 1
Supply voltage: 2.7...5.5V DC
Mounting: SMD
On-state resistance: 50mΩ
Kind of package: reel; tape
Kind of output: P-Channel
Active logical level: high
Produkt ist nicht verfügbar
| AP22804ASN-7 |
|
Hersteller: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2.5A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Case: U-DFN2020-6
Output current: 2.5A
Number of channels: 1
Supply voltage: 2.7...5.5V DC
Mounting: SMD
On-state resistance: 50mΩ
Kind of package: reel; tape
Kind of output: P-Channel
Active logical level: high
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2.5A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Case: U-DFN2020-6
Output current: 2.5A
Number of channels: 1
Supply voltage: 2.7...5.5V DC
Mounting: SMD
On-state resistance: 50mΩ
Kind of package: reel; tape
Kind of output: P-Channel
Active logical level: high
Produkt ist nicht verfügbar
| AP22804AW5-7 |
|
Hersteller: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2.5A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Case: SOT25
Output current: 2.5A
Number of channels: 1
Supply voltage: 2.7...5.5V DC
Mounting: SMD
On-state resistance: 50mΩ
Kind of package: reel; tape
Kind of output: P-Channel
Active logical level: high
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2.5A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Case: SOT25
Output current: 2.5A
Number of channels: 1
Supply voltage: 2.7...5.5V DC
Mounting: SMD
On-state resistance: 50mΩ
Kind of package: reel; tape
Kind of output: P-Channel
Active logical level: high
Produkt ist nicht verfügbar
| AP22804BSN-7 |
Hersteller: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2.5A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 2.5A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: U-DFN2020-6
On-state resistance: 50mΩ
Kind of package: reel; tape
Supply voltage: 2.7...5.5V DC
Active logical level: low
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2.5A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 2.5A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: U-DFN2020-6
On-state resistance: 50mΩ
Kind of package: reel; tape
Supply voltage: 2.7...5.5V DC
Active logical level: low
Produkt ist nicht verfügbar
| AP22804BW5-7 |
|
Hersteller: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2.5A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 2.5A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: SOT25
On-state resistance: 50mΩ
Kind of package: reel; tape
Supply voltage: 2.7...5.5V DC
Active logical level: low
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2.5A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 2.5A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: SOT25
On-state resistance: 50mΩ
Kind of package: reel; tape
Supply voltage: 2.7...5.5V DC
Active logical level: low
Produkt ist nicht verfügbar
| ZVN4525E6TA |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 0.23A; 1.1W; SOT26
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 0.23A
Power dissipation: 1.1W
Case: SOT26
Gate-source voltage: ±40V
On-state resistance: 8.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 0.23A; 1.1W; SOT26
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 0.23A
Power dissipation: 1.1W
Case: SOT26
Gate-source voltage: ±40V
On-state resistance: 8.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 3072 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 63+ | 1.14 EUR |
| 104+ | 0.69 EUR |
| 118+ | 0.61 EUR |
| 129+ | 0.56 EUR |
| 136+ | 0.53 EUR |
| 500+ | 0.51 EUR |
| DZ23C10-7-F |
|
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 10V; SMD; reel,tape; SOT23; 100nA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 10V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: common cathode; double
Leakage current: 0.1µA
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 10V; SMD; reel,tape; SOT23; 100nA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 10V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: common cathode; double
Leakage current: 0.1µA
Produkt ist nicht verfügbar
| DZ23C12-7-F |
|
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 12V; SMD; reel,tape; SOT23
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: common cathode; double
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 12V; SMD; reel,tape; SOT23
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: common cathode; double
auf Bestellung 2089 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 1000+ | 0.072 EUR |
| 1060+ | 0.068 EUR |
| 1460+ | 0.049 EUR |
| 1540+ | 0.046 EUR |
| DZ23C18-7-F |
|
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 18V; SMD; reel,tape; SOT23
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±6.5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: common cathode; double
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 18V; SMD; reel,tape; SOT23
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±6.5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: common cathode; double
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 780+ | 0.093 EUR |
| 860+ | 0.084 EUR |
| 1120+ | 0.064 EUR |
| 1200+ | 0.06 EUR |
| DZ23C27-7-F |
|
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 27V; SMD; reel,tape; SOT23; 100nA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 27V
Mounting: SMD
Tolerance: ±7%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: common cathode; double
Leakage current: 0.1µA
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 27V; SMD; reel,tape; SOT23; 100nA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 27V
Mounting: SMD
Tolerance: ±7%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: common cathode; double
Leakage current: 0.1µA
Produkt ist nicht verfügbar
| DZ23C33-7-F |
|
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 33V; SMD; reel,tape; SOT23; 100nA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 33V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: common cathode; double
Leakage current: 0.1µA
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 33V; SMD; reel,tape; SOT23; 100nA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 33V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: common cathode; double
Leakage current: 0.1µA
Produkt ist nicht verfügbar
| DZ23C39-7-F |
|
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 39V; SMD; reel,tape; SOT23; 100nA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 39V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: common cathode; double
Leakage current: 0.1µA
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 39V; SMD; reel,tape; SOT23; 100nA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 39V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: common cathode; double
Leakage current: 0.1µA
Produkt ist nicht verfügbar
| DZ23C7V5-7-F |
|
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 7.5V; SMD; reel,tape; SOT23; 100nA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 7.5V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: common cathode; double
Leakage current: 0.1µA
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 7.5V; SMD; reel,tape; SOT23; 100nA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 7.5V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: common cathode; double
Leakage current: 0.1µA
Produkt ist nicht verfügbar
| DMG4822SSD-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.6A; Idm: 60A; 1.42W; SO8
Polarisation: unipolar
Power dissipation: 1.42W
Kind of package: reel; tape
Gate charge: 10.5nC
Kind of channel: enhanced
Gate-source voltage: ±25V
Pulsed drain current: 60A
Mounting: SMD
Case: SO8
Drain-source voltage: 30V
Drain current: 6.6A
On-state resistance: 31mΩ
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.6A; Idm: 60A; 1.42W; SO8
Polarisation: unipolar
Power dissipation: 1.42W
Kind of package: reel; tape
Gate charge: 10.5nC
Kind of channel: enhanced
Gate-source voltage: ±25V
Pulsed drain current: 60A
Mounting: SMD
Case: SO8
Drain-source voltage: 30V
Drain current: 6.6A
On-state resistance: 31mΩ
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
| DMG6898LSD-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 7.1A; Idm: 30A; 1.28W; SO8
Polarisation: unipolar
On-state resistance: 23mΩ
Kind of package: reel; tape
Drain current: 7.1A
Drain-source voltage: 20V
Case: SO8
Gate charge: 26nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 30A
Type of transistor: N-MOSFET
Mounting: SMD
Power dissipation: 1.28W
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 7.1A; Idm: 30A; 1.28W; SO8
Polarisation: unipolar
On-state resistance: 23mΩ
Kind of package: reel; tape
Drain current: 7.1A
Drain-source voltage: 20V
Case: SO8
Gate charge: 26nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 30A
Type of transistor: N-MOSFET
Mounting: SMD
Power dissipation: 1.28W
Produkt ist nicht verfügbar
| DMN2029USD-13 |
|
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 4.8A; 0.7W; SO8
Polarisation: unipolar
On-state resistance: 35mΩ
Kind of package: reel; tape
Drain current: 4.8A
Drain-source voltage: 20V
Case: SO8
Kind of channel: enhanced
Gate-source voltage: ±8V
Type of transistor: N-MOSFET x2
Mounting: SMD
Power dissipation: 0.7W
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 4.8A; 0.7W; SO8
Polarisation: unipolar
On-state resistance: 35mΩ
Kind of package: reel; tape
Drain current: 4.8A
Drain-source voltage: 20V
Case: SO8
Kind of channel: enhanced
Gate-source voltage: ±8V
Type of transistor: N-MOSFET x2
Mounting: SMD
Power dissipation: 0.7W
Produkt ist nicht verfügbar
| DMN2041LSD-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4.92A; Idm: 30A; 1.16W; SO8
Polarisation: unipolar
On-state resistance: 41mΩ
Kind of package: reel; tape
Drain current: 4.92A
Drain-source voltage: 20V
Case: SO8
Gate charge: 15.6nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 30A
Type of transistor: N-MOSFET
Mounting: SMD
Power dissipation: 1.16W
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4.92A; Idm: 30A; 1.16W; SO8
Polarisation: unipolar
On-state resistance: 41mΩ
Kind of package: reel; tape
Drain current: 4.92A
Drain-source voltage: 20V
Case: SO8
Gate charge: 15.6nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 30A
Type of transistor: N-MOSFET
Mounting: SMD
Power dissipation: 1.16W
Produkt ist nicht verfügbar
| DMN3024LSD-13 |
|
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 5.8A; 1.3W; SO8
Polarisation: unipolar
On-state resistance: 36mΩ
Kind of package: reel; tape
Drain current: 5.8A
Drain-source voltage: 30V
Case: SO8
Kind of channel: enhanced
Gate-source voltage: ±20V
Type of transistor: N-MOSFET x2
Mounting: SMD
Power dissipation: 1.3W
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 5.8A; 1.3W; SO8
Polarisation: unipolar
On-state resistance: 36mΩ
Kind of package: reel; tape
Drain current: 5.8A
Drain-source voltage: 30V
Case: SO8
Kind of channel: enhanced
Gate-source voltage: ±20V
Type of transistor: N-MOSFET x2
Mounting: SMD
Power dissipation: 1.3W
auf Bestellung 344 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 117+ | 0.61 EUR |
| 136+ | 0.53 EUR |
| 231+ | 0.31 EUR |
| 244+ | 0.29 EUR |
| DMN4027SSD-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 5.7A; Idm: 28A; 2.14W; SO8
Polarisation: unipolar
On-state resistance: 47mΩ
Kind of package: reel; tape
Drain current: 5.7A
Drain-source voltage: 40V
Case: SO8
Gate charge: 12.9nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 28A
Type of transistor: N-MOSFET
Mounting: SMD
Power dissipation: 2.14W
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 5.7A; Idm: 28A; 2.14W; SO8
Polarisation: unipolar
On-state resistance: 47mΩ
Kind of package: reel; tape
Drain current: 5.7A
Drain-source voltage: 40V
Case: SO8
Gate charge: 12.9nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 28A
Type of transistor: N-MOSFET
Mounting: SMD
Power dissipation: 2.14W
Produkt ist nicht verfügbar
| DMN4031SSD-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 5.6A; Idm: 40A; 2.6W; SO8
Polarisation: unipolar
On-state resistance: 50mΩ
Kind of package: reel; tape
Drain current: 5.6A
Drain-source voltage: 40V
Case: SO8
Gate charge: 18.6nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 40A
Type of transistor: N-MOSFET
Mounting: SMD
Power dissipation: 2.6W
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 5.6A; Idm: 40A; 2.6W; SO8
Polarisation: unipolar
On-state resistance: 50mΩ
Kind of package: reel; tape
Drain current: 5.6A
Drain-source voltage: 40V
Case: SO8
Gate charge: 18.6nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 40A
Type of transistor: N-MOSFET
Mounting: SMD
Power dissipation: 2.6W
Produkt ist nicht verfügbar
| DMN4034SSD-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 5A; Idm: 24.8A; 2.14W; SO8
Polarisation: unipolar
On-state resistance: 59mΩ
Kind of package: reel; tape
Drain current: 5A
Drain-source voltage: 40V
Case: SO8
Gate charge: 18nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 24.8A
Type of transistor: N-MOSFET
Mounting: SMD
Power dissipation: 2.14W
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 5A; Idm: 24.8A; 2.14W; SO8
Polarisation: unipolar
On-state resistance: 59mΩ
Kind of package: reel; tape
Drain current: 5A
Drain-source voltage: 40V
Case: SO8
Gate charge: 18nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 24.8A
Type of transistor: N-MOSFET
Mounting: SMD
Power dissipation: 2.14W
Produkt ist nicht verfügbar
| DMN6022SSD-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 5A; Idm: 45A; 1.5W; SO8
Kind of package: reel; tape
Mounting: SMD
Case: SO8
Drain-source voltage: 60V
Drain current: 5A
On-state resistance: 34mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.5W
Polarisation: unipolar
Gate charge: 32nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 45A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 5A; Idm: 45A; 1.5W; SO8
Kind of package: reel; tape
Mounting: SMD
Case: SO8
Drain-source voltage: 60V
Drain current: 5A
On-state resistance: 34mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.5W
Polarisation: unipolar
Gate charge: 32nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 45A
Produkt ist nicht verfügbar
| DMN6066SSD-13 |
|
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 3.5A; Idm: 17A; 2.14W; SO8
Kind of package: reel; tape
Mounting: SMD
Case: SO8
Drain-source voltage: 60V
Drain current: 3.5A
On-state resistance: 97mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 2.14W
Polarisation: unipolar
Gate charge: 10.3nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 17A
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 3.5A; Idm: 17A; 2.14W; SO8
Kind of package: reel; tape
Mounting: SMD
Case: SO8
Drain-source voltage: 60V
Drain current: 3.5A
On-state resistance: 97mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 2.14W
Polarisation: unipolar
Gate charge: 10.3nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 17A
Produkt ist nicht verfügbar
| DMN6070SSD-13 |
|
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 3.6A; 1.2W; SO8
Polarisation: unipolar
On-state resistance: 0.1Ω
Kind of package: reel; tape
Drain current: 3.6A
Drain-source voltage: 60V
Case: SO8
Kind of channel: enhanced
Gate-source voltage: ±20V
Type of transistor: N-MOSFET x2
Mounting: SMD
Power dissipation: 1.2W
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 3.6A; 1.2W; SO8
Polarisation: unipolar
On-state resistance: 0.1Ω
Kind of package: reel; tape
Drain current: 3.6A
Drain-source voltage: 60V
Case: SO8
Kind of channel: enhanced
Gate-source voltage: ±20V
Type of transistor: N-MOSFET x2
Mounting: SMD
Power dissipation: 1.2W
auf Bestellung 2024 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 81+ | 0.89 EUR |
| 131+ | 0.55 EUR |
| 193+ | 0.37 EUR |
| 281+ | 0.25 EUR |
| 298+ | 0.24 EUR |
| DMP58D0LFB-7 |
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -50V; -250mA; Idm: -0.5A; 1.22W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -0.25A
Pulsed drain current: -0.5A
Power dissipation: 1.22W
Case: X1-DFN1006-3
Gate-source voltage: ±20V
On-state resistance: 18Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -50V; -250mA; Idm: -0.5A; 1.22W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -0.25A
Pulsed drain current: -0.5A
Power dissipation: 1.22W
Case: X1-DFN1006-3
Gate-source voltage: ±20V
On-state resistance: 18Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| DMN3020UFDF-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 8.3A; Idm: 40A; 1.3W
Type of transistor: N-MOSFET
Case: U-DFN2020-6
Mounting: SMD
Power dissipation: 1.3W
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 27nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 40A
Drain-source voltage: 30V
Drain current: 8.3A
On-state resistance: 0.12Ω
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 8.3A; Idm: 40A; 1.3W
Type of transistor: N-MOSFET
Case: U-DFN2020-6
Mounting: SMD
Power dissipation: 1.3W
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 27nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 40A
Drain-source voltage: 30V
Drain current: 8.3A
On-state resistance: 0.12Ω
Produkt ist nicht verfügbar
| SMAJ200CA-13-F |
|
Hersteller: DIODES INCORPORATED
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 400W; 224÷248V; 1.2A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 200V
Breakdown voltage: 224...248V
Max. forward impulse current: 1.2A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 400W; 224÷248V; 1.2A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 200V
Breakdown voltage: 224...248V
Max. forward impulse current: 1.2A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
| AZ2185D-ADJTRG1 |
|
Hersteller: DIODES INCORPORATED
Category: LDO regulated voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 3A; TO252; SMD; ±1%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 1.5V
Output current: 3A
Case: TO252
Mounting: SMD
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 1.25...12V
Manufacturer series: AZ2185
Category: LDO regulated voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 3A; TO252; SMD; ±1%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 1.5V
Output current: 3A
Case: TO252
Mounting: SMD
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 1.25...12V
Manufacturer series: AZ2185
Produkt ist nicht verfügbar