Produkte > DIODES INCORPORATED > Alle Produkte des Herstellers DIODES INCORPORATED (75520) > Seite 1220 nach 1259
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DMG2301LK-13 | DIODES INCORPORATED |
 Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -20V; -1.9A; Idm: -8A; 1.4W; SOT23 Mounting: SMD On-state resistance: 298mΩ Type of transistor: P-MOSFET Power dissipation: 1.4W Polarisation: unipolar Kind of package: reel; tape Drain current: -1.9A Drain-source voltage: -20V Gate charge: 3.4nC Case: SOT23 Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: -8A |
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DMNH6022SSD-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 5.9A; Idm: 45A; 2.1W; SO8 Kind of package: reel; tape Type of transistor: N-MOSFET Case: SO8 On-state resistance: 30mΩ Gate-source voltage: ±20V Mounting: SMD Pulsed drain current: 45A Power dissipation: 2.1W Gate charge: 32nC Polarisation: unipolar Drain current: 5.9A Kind of channel: enhanced Drain-source voltage: 60V |
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DMNH6022SSDQ-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 5.9A; Idm: 45A; 2.1W; SO8 Kind of package: reel; tape Type of transistor: N-MOSFET Case: SO8 On-state resistance: 30mΩ Gate-source voltage: ±20V Mounting: SMD Pulsed drain current: 45A Power dissipation: 2.1W Gate charge: 32nC Polarisation: unipolar Drain current: 5.9A Kind of channel: enhanced Drain-source voltage: 60V |
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KBJ4005G | DIODES INCORPORATED |
Category: Flat single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 50V; If: 4A; Ifsm: 120A; flat Electrical mounting: THT Max. off-state voltage: 50V Load current: 4A Max. forward impulse current: 120A Kind of package: tube Version: flat Features of semiconductor devices: glass passivated Type of bridge rectifier: single-phase Case: KBJ Leads: flat pin |
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ZXGD3009DYTA | DIODES INCORPORATED |
Category: MOSFET/IGBT drivers Description: IC: driver; gate driver; SOT363; -2÷2A; Ch: 1; 40VDC Type of integrated circuit: driver Kind of integrated circuit: gate driver Case: SOT363 Output current: -2...2A Number of channels: 1 Supply voltage: 40V DC Mounting: SMD Operating temperature: -55...150°C Kind of package: reel; tape Kind of output: non-inverting |
auf Bestellung 1660 Stücke: Lieferzeit 14-21 Tag (e) |
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ZXGD3101T8TA | DIODES INCORPORATED |
Category: MOSFET/IGBT drivers Description: IC: driver; high-/low-side,MOSFET gate driver; SM8; -2.5÷2.5A Type of integrated circuit: driver Kind of integrated circuit: high-/low-side; MOSFET gate driver Case: SM8 Output current: -2.5...2.5A Number of channels: 1 Supply voltage: 5...15V DC Mounting: SMD Operating temperature: -40...150°C Impulse rise time: 305ns Pulse fall time: 20ns Kind of package: reel; tape |
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ZXGD3103N8TC | DIODES INCORPORATED |
Category: MOSFET/IGBT drivers Description: IC: driver; high-/low-side,MOSFET gate driver; SO8; -6÷2.5A; Ch: 1 Type of integrated circuit: driver Kind of integrated circuit: high-/low-side; MOSFET gate driver Case: SO8 Output current: -6...2.5A Number of channels: 1 Supply voltage: 5...15V DC Mounting: SMD Operating temperature: -40...150°C Kind of package: reel; tape Voltage class: 180V |
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B370-13-F | DIODES INCORPORATED |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 70V; 3A; SMC; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 70V Load current: 3A Semiconductor structure: single diode Capacitance: 0.1nF Case: SMC Kind of package: reel; tape Max. forward impulse current: 100A |
auf Bestellung 2367 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002Q-7-F | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 0.105A; Idm: 0.8A; 0.37W; SOT23 Kind of package: reel; tape Pulsed drain current: 0.8A Power dissipation: 0.37W Polarisation: unipolar Features of semiconductor devices: ESD protected gate Drain current: 0.105A Kind of channel: enhanced Drain-source voltage: 60V Application: automotive industry Type of transistor: N-MOSFET Gate-source voltage: ±20V Case: SOT23 On-state resistance: 7.5Ω Mounting: SMD |
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2N7002T-7-F | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 0.115A; 0.15W; SOT523 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.115A Power dissipation: 0.15W Case: SOT523 Gate-source voltage: ±20V On-state resistance: 7.5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
auf Bestellung 12730 Stücke: Lieferzeit 14-21 Tag (e) |
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DMP4050SSS-13 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -4.7A; 1.56W; SO8 Case: SO8 Mounting: SMD Drain-source voltage: -40V Drain current: -4.7A On-state resistance: 79mΩ Type of transistor: P-MOSFET Power dissipation: 1.56W Polarisation: unipolar Kind of package: reel; tape Kind of channel: enhanced Gate-source voltage: ±20V |
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| DMP2018LFK-13 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -10.3A; Idm: -90A; 1.3W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -10.3A Pulsed drain current: -90A Power dissipation: 1.3W Case: U-DFN2523-6 Gate-source voltage: ±12V On-state resistance: 25mΩ Mounting: SMD Gate charge: 113nC Kind of package: reel; tape Kind of channel: enhanced |
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| DMG3415UFY4Q-7 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -16V; -2.2A; Idm: -12A; 1.35W Mounting: SMD Case: X2-DFN2015-3 Gate charge: 10nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -12A Drain-source voltage: -16V Drain current: -2.2A On-state resistance: 65mΩ Type of transistor: P-MOSFET Application: automotive industry Power dissipation: 1.35W Polarisation: unipolar Kind of package: reel; tape |
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74LVC126AS14-13 | DIODES INCORPORATED |
Category: Buffers, transceivers, drivers Description: IC: digital; buffer,non-inverting; Ch: 4; SMD; SO14; LVC; -40÷125°C Supply voltage: 1.65...5.5V DC Mounting: SMD Operating temperature: -40...125°C Manufacturer series: LVC Kind of output: 3-state Number of channels: 4 Kind of integrated circuit: buffer; non-inverting Case: SO14 Type of integrated circuit: digital Quiescent current: 40µA Kind of package: reel; tape |
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| 74LVC126AT14-13 | DIODES INCORPORATED |
Category: Buffers, transceivers, drivers Description: IC: digital; buffer; Ch: 4; CMOS; SMD; TSSOP14; 1.65÷5.5VDC; LVC Type of integrated circuit: digital Kind of integrated circuit: buffer Number of channels: 4 Technology: CMOS Mounting: SMD Case: TSSOP14 Supply voltage: 1.65...5.5V DC Operating temperature: -40...150°C Kind of output: 3-state Kind of package: reel; tape Family: LVC |
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AZ23C5V6-7-F | DIODES INCORPORATED |
Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 5.6V; SMD; reel,tape; SOT23 Type of diode: Zener Power dissipation: 0.3W Zener voltage: 5.6V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOT23 Semiconductor structure: common anode; double |
auf Bestellung 2800 Stücke: Lieferzeit 14-21 Tag (e) |
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AL17050WT-7 | DIODES INCORPORATED |
Category: Voltage regulators - DC/DC circuits Description: IC: PMIC; DC/DC converter; Uin: 20÷400VDC; Uout: 3.4÷20VDC; 0.06A Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC converter Input voltage: 20...400V DC Output voltage: 3.4...20V DC Output current: 60mA Case: TSOT25 Mounting: SMD Frequency: 70kHz Topology: buck Operating temperature: -40...105°C Kind of package: reel; tape Efficiency: 50% |
auf Bestellung 2610 Stücke: Lieferzeit 14-21 Tag (e) |
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| MURS140-13-F | DIODES INCORPORATED |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 400V; 1A; 50ns; SMB; Ufmax: 1.25V; Ifsm: 35A Mounting: SMD Load current: 1A Semiconductor structure: single diode Reverse recovery time: 50ns Max. forward impulse current: 35A Capacitance: 10pF Kind of package: reel; tape Type of diode: rectifying Case: SMB Max. off-state voltage: 0.4kV Max. forward voltage: 1.25V |
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GBU6005 | DIODES INCORPORATED |
Category: Flat single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 50V; If: 6A; Ifsm: 175A; flat Version: flat Kind of package: tube Electrical mounting: THT Load current: 6A Max. off-state voltage: 50V Leads: flat pin Case: GBU Features of semiconductor devices: glass passivated Max. forward impulse current: 175A Type of bridge rectifier: single-phase |
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GBU601 | DIODES INCORPORATED |
Category: Flat single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 100V; If: 6A; Ifsm: 175A Version: flat Kind of package: tube Electrical mounting: THT Load current: 6A Max. off-state voltage: 100V Leads: flat pin Case: GBU Features of semiconductor devices: glass passivated Max. forward impulse current: 175A Type of bridge rectifier: single-phase |
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GBU602 | DIODES INCORPORATED |
Category: Flat single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 200V; If: 6A; Ifsm: 175A Version: flat Kind of package: tube Electrical mounting: THT Load current: 6A Max. off-state voltage: 200V Leads: flat pin Case: GBU Features of semiconductor devices: glass passivated Max. forward impulse current: 175A Type of bridge rectifier: single-phase |
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GBU604 | DIODES INCORPORATED |
Category: Flat single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 400V; If: 6A; Ifsm: 175A Version: flat Kind of package: tube Electrical mounting: THT Load current: 6A Max. off-state voltage: 0.4kV Leads: flat pin Case: GBU Features of semiconductor devices: glass passivated Max. forward impulse current: 175A Type of bridge rectifier: single-phase |
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GBU608 | DIODES INCORPORATED |
Category: Flat single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 800V; If: 6A; Ifsm: 175A Version: flat Kind of package: tube Electrical mounting: THT Load current: 6A Max. off-state voltage: 0.8kV Leads: flat pin Case: GBU Features of semiconductor devices: glass passivated Max. forward impulse current: 175A Type of bridge rectifier: single-phase |
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GBU610 | DIODES INCORPORATED |
Category: Flat single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 6A; Ifsm: 175A; flat Type of bridge rectifier: single-phase Max. off-state voltage: 1kV Load current: 6A Max. forward impulse current: 175A Version: flat Case: GBU Electrical mounting: THT Leads: flat pin Kind of package: tube Features of semiconductor devices: glass passivated |
auf Bestellung 24 Stücke: Lieferzeit 14-21 Tag (e) |
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S2M-13-F | DIODES INCORPORATED |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 1kV; 1.5A; SMB; Ufmax: 1.15V; Ifsm: 50A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1kV Load current: 1.5A Semiconductor structure: single diode Features of semiconductor devices: glass passivated Capacitance: 20pF Case: SMB Max. forward voltage: 1.15V Max. forward impulse current: 50A Leakage current: 125µA Kind of package: reel; tape |
auf Bestellung 535 Stücke: Lieferzeit 14-21 Tag (e) |
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| MBRD20200CT-13 | DIODES INCORPORATED |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 200V; 10Ax2; DPAK; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 10A x2 Semiconductor structure: common cathode; double Case: DPAK Kind of package: reel; tape Max. forward impulse current: 150A Max. forward voltage: 0.9V Leakage current: 1mA |
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| MJD32C-13 | DIODES INCORPORATED |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 100V; 3A; DPAK,TO252 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 3A Case: DPAK; TO252 Current gain: 10...50 Mounting: SMD Kind of package: reel; tape Frequency: 3MHz |
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MJD32CQ-13 | DIODES INCORPORATED |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 100V; 3A; 15W; DPAK; automotive industry Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 3A Power dissipation: 15W Case: DPAK Current gain: 10...50 Mounting: SMD Kind of package: reel; tape Application: automotive industry |
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| MJD32CUQ-13 | DIODES INCORPORATED |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 100V; 3A; 15W; DPAK; automotive industry Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 3A Power dissipation: 15W Case: DPAK Pulsed collector current: 5A Mounting: SMD Kind of package: reel; tape Application: automotive industry |
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| DMN3010LFG-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 11A; Idm: 90A; 2.4W Drain-source voltage: 30V Drain current: 11A On-state resistance: 10.5mΩ Type of transistor: N-MOSFET Power dissipation: 2.4W Polarisation: unipolar Kind of package: reel; tape Case: PowerDI3333-8 Gate charge: 37nC Mounting: SMD Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 90A |
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| DMN3010LFG-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 11A; Idm: 90A; 2.4W Drain-source voltage: 30V Drain current: 11A On-state resistance: 10.5mΩ Type of transistor: N-MOSFET Power dissipation: 2.4W Polarisation: unipolar Kind of package: reel; tape Case: PowerDI3333-8 Gate charge: 37nC Mounting: SMD Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 90A |
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| DMN3010LK3-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 10.5A; Idm: 90A; 2.4W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 10.5A Pulsed drain current: 90A Power dissipation: 2.4W Case: TO252 Gate-source voltage: ±20V On-state resistance: 11.5mΩ Mounting: SMD Gate charge: 37nC Kind of package: reel; tape Kind of channel: enhanced |
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DMN3010LSS-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 13A; Idm: 64A; 2.5W; SO8 Case: SO8 Mounting: SMD Kind of package: reel; tape Pulsed drain current: 64A Power dissipation: 2.5W Gate charge: 43.7nC Polarisation: unipolar Drain current: 13A Kind of channel: enhanced Drain-source voltage: 30V Type of transistor: N-MOSFET On-state resistance: 13mΩ Gate-source voltage: ±20V |
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| DMN3013LDG-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 7.6A; Idm: 80A; 1.25W Case: PowerDI3333-8 Mounting: SMD Kind of package: reel; tape Pulsed drain current: 80A Power dissipation: 1.25W Gate charge: 5.7nC Polarisation: unipolar Drain current: 7.6A Kind of channel: enhanced Drain-source voltage: 30V Type of transistor: N-MOSFET On-state resistance: 17.7mΩ Gate-source voltage: ±10V |
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| DMN3013LFG-7 | DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30V; 7.6A; Idm: 80A; 1.25W Case: PowerDI3333-8 Mounting: SMD Kind of package: reel; tape Pulsed drain current: 80A Power dissipation: 1.25W Gate charge: 5.7nC Polarisation: unipolar Drain current: 7.6A Kind of channel: enhanced Drain-source voltage: 30V Type of transistor: N-MOSFET x2 On-state resistance: 17.7mΩ Gate-source voltage: ±10V |
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DMN3015LSD-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 9A; Idm: 80A; 1W; SO8 Polarisation: unipolar On-state resistance: 18mΩ Kind of package: reel; tape Drain current: 9A Drain-source voltage: 30V Case: SO8 Gate charge: 25.1nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 80A Type of transistor: N-MOSFET Mounting: SMD Power dissipation: 1W |
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| DMN3016LDN-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 7.3A; Idm: 45A; 1.6W Case: V-DFN3030-8 Mounting: SMD Kind of package: reel; tape Pulsed drain current: 45A Power dissipation: 1.6W Gate charge: 25.1nC Polarisation: unipolar Drain current: 7.3A Kind of channel: enhanced Drain-source voltage: 30V Type of transistor: N-MOSFET On-state resistance: 24mΩ Gate-source voltage: ±20V |
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| DMN3016LDN-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 7.3A; Idm: 45A; 1.6W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 7.3A Pulsed drain current: 45A Power dissipation: 1.6W Case: V-DFN3030-8 Gate-source voltage: ±20V On-state resistance: 24mΩ Mounting: SMD Gate charge: 25.1nC Kind of package: reel; tape Kind of channel: enhanced |
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| DMN3016LDV-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 17A; Idm: 70A; 1.8W Case: PowerDI3333-8 Mounting: SMD Kind of package: reel; tape Pulsed drain current: 70A Power dissipation: 1.8W Gate charge: 21nC Polarisation: unipolar Drain current: 17A Kind of channel: enhanced Drain-source voltage: 30V Type of transistor: N-MOSFET On-state resistance: 17mΩ Gate-source voltage: ±20V |
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| DMN3016LDV-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 17A; Idm: 70A; 1.8W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 17A Pulsed drain current: 70A Power dissipation: 1.8W Case: PowerDI3333-8 Gate-source voltage: ±20V On-state resistance: 17mΩ Mounting: SMD Gate charge: 21nC Kind of package: reel; tape Kind of channel: enhanced |
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| DMN3016LFDE-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 9A; Idm: 90A; 1.3W; U-DFN2020-6 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 9A Pulsed drain current: 90A Power dissipation: 1.3W Case: U-DFN2020-6 Gate-source voltage: ±20V On-state resistance: 16mΩ Mounting: SMD Gate charge: 25.1nC Kind of package: reel; tape Kind of channel: enhanced |
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| DMN3016LFDE-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 9A; Idm: 90A; 1.3W; U-DFN2020-6 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 9A Pulsed drain current: 90A Power dissipation: 1.3W Case: U-DFN2020-6 Gate-source voltage: ±20V On-state resistance: 16mΩ Mounting: SMD Gate charge: 25.1nC Kind of package: reel; tape Kind of channel: enhanced |
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| DMN3016LFDF-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 8A; Idm: 50A; 0.47W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 8A Pulsed drain current: 50A Power dissipation: 0.47W Case: U-DFN2020-6 Gate-source voltage: ±20V On-state resistance: 16mΩ Mounting: SMD Gate charge: 25.1nC Kind of package: reel; tape Kind of channel: enhanced |
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| DMN3016LK3-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 13.6A; Idm: 90A; 1.8W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 13.6A Pulsed drain current: 90A Power dissipation: 1.8W Case: TO252 Gate-source voltage: ±20V On-state resistance: 16mΩ Mounting: SMD Gate charge: 25.1nC Kind of package: reel; tape Kind of channel: enhanced |
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| DMN3016LPS-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 10.8A; Idm: 70A; 2.75W Mounting: SMD Case: PowerDI5060-8 Kind of package: reel; tape Power dissipation: 2.75W On-state resistance: 16mΩ Polarisation: unipolar Drain current: 10.8A Drain-source voltage: 30V Gate charge: 25.1nC Kind of channel: enhanced Gate-source voltage: ±20V Type of transistor: N-MOSFET Pulsed drain current: 70A |
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| DMN3018SFGQ-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 7A; Idm: 60A; 2.2W Mounting: SMD Drain-source voltage: 30V Drain current: 7A On-state resistance: 35mΩ Type of transistor: N-MOSFET Power dissipation: 2.2W Polarisation: unipolar Kind of package: reel; tape Gate charge: 13.2nC Kind of channel: enhanced Gate-source voltage: ±25V Pulsed drain current: 60A Case: PowerDI3333-8 |
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DMN3018SSD-13 | DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30V; 5.2A; 1.5W; SO8 Polarisation: unipolar On-state resistance: 30mΩ Kind of package: reel; tape Drain current: 5.2A Drain-source voltage: 30V Case: SO8 Features of semiconductor devices: ESD protected gate Kind of channel: enhanced Gate-source voltage: ±20V Type of transistor: N-MOSFET x2 Mounting: SMD Power dissipation: 1.5W |
auf Bestellung 865 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN3018SSS-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 5.8A; Idm: 60A; 1.1W; SO8 Mounting: SMD Drain-source voltage: 30V Drain current: 5.8A On-state resistance: 35mΩ Type of transistor: N-MOSFET Power dissipation: 1.1W Polarisation: unipolar Kind of package: reel; tape Gate charge: 13.2nC Kind of channel: enhanced Gate-source voltage: ±25V Pulsed drain current: 60A Case: SO8 |
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| DMTH8028LPSW-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 29.5A; Idm: 166.8A; 3.9W Mounting: SMD Drain-source voltage: 80V Drain current: 29.5A On-state resistance: 41mΩ Type of transistor: N-MOSFET Power dissipation: 3.9W Polarisation: unipolar Kind of package: reel; tape Gate charge: 10.4nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 166.8A Case: PowerDI5060-8 |
Produkt ist nicht verfügbar |
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| DMTH8028LPSWQ-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 29.5A; Idm: 166.8A; 3.9W Mounting: SMD Drain-source voltage: 80V Drain current: 29.5A On-state resistance: 41mΩ Type of transistor: N-MOSFET Power dissipation: 3.9W Polarisation: unipolar Kind of package: reel; tape Gate charge: 10.4nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 166.8A Case: PowerDI5060-8 |
Produkt ist nicht verfügbar |
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ZHT431F01TA | DIODES INCORPORATED |
Category: Reference voltage sources - circuits Description: IC: voltage reference source; 2.5V; ±1%; SOT23; reel,tape; 100mA Type of integrated circuit: voltage reference source Reference voltage: 2.5V Tolerance: ±1% Mounting: SMD Case: SOT23 Operating temperature: -40...85°C Kind of package: reel; tape Maximum output current: 0.1A Operating voltage: 2.5...20V |
Produkt ist nicht verfügbar |
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ZHT431F02TA | DIODES INCORPORATED |
Category: Reference voltage sources - circuits Description: IC: voltage reference source; 2.5V; ±2%; SOT23; reel,tape; 100mA Type of integrated circuit: voltage reference source Reference voltage: 2.5V Tolerance: ±2% Mounting: SMD Case: SOT23 Operating temperature: -55...125°C Kind of package: reel; tape Maximum output current: 0.1A Operating voltage: 2.5...20V |
Produkt ist nicht verfügbar |
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ZHT431FMTA | DIODES INCORPORATED |
Category: Reference voltage sources - circuits Description: IC: voltage reference source; 2.5V; ±0.5%; SOT23; reel,tape; 100mA Type of integrated circuit: voltage reference source Reference voltage: 2.5V Tolerance: ±0.5% Mounting: SMD Case: SOT23 Operating temperature: -55...125°C Kind of package: reel; tape Maximum output current: 0.1A Operating voltage: 2.5...20V |
Produkt ist nicht verfügbar |
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D5V0F4U6S-7 | DIODES INCORPORATED |
Category: Transil diodes - arrays Description: Diode: TVS array; 6V; 3A; SOT363; Ch: 4; reel,tape Type of diode: TVS array Breakdown voltage: 6V Max. forward impulse current: 3A Mounting: SMD Case: SOT363 Max. off-state voltage: 5.5V Leakage current: 0.2µA Number of channels: 4 Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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| D5V0F4U6V-7 | DIODES INCORPORATED |
Category: Transil diodes - arrays Description: Diode: TVS array; 6V; 3A; SOT563; Ch: 4; reel,tape Type of diode: TVS array Breakdown voltage: 6V Max. forward impulse current: 3A Mounting: SMD Case: SOT563 Max. off-state voltage: 5.5V Leakage current: 0.2µA Number of channels: 4 Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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| D5V0L1B2LP-7B | DIODES INCORPORATED |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 84W; 6÷8V; 6A; bidirectional; X1-DFN1006-2; reel,tape Type of diode: TVS Breakdown voltage: 6...8V Max. forward impulse current: 6A Peak pulse power dissipation: 84W Semiconductor structure: bidirectional Mounting: SMD Case: X1-DFN1006-2 Max. off-state voltage: 5V Leakage current: 0.1µA Number of channels: 1 Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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DESD5V0S1BA-7 | DIODES INCORPORATED |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 130W; 5.5÷9.5V; 12A; bidirectional; SOD323; reel,tape Type of diode: TVS Peak pulse power dissipation: 130W Max. off-state voltage: 5V Breakdown voltage: 5.5...9.5V Max. forward impulse current: 12A Semiconductor structure: bidirectional Case: SOD323 Mounting: SMD Leakage current: 0.1µA Kind of package: reel; tape Number of channels: 1 |
auf Bestellung 360 Stücke: Lieferzeit 14-21 Tag (e) |
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DESD5V0S1BB-7 | DIODES INCORPORATED |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 130W; 5.5÷9.5V; 12A; bidirectional; SOD523; reel,tape Type of diode: TVS Peak pulse power dissipation: 130W Max. off-state voltage: 5V Breakdown voltage: 5.5...9.5V Max. forward impulse current: 12A Semiconductor structure: bidirectional Case: SOD523 Mounting: SMD Leakage current: 0.1µA Kind of package: reel; tape Number of channels: 1 |
Produkt ist nicht verfügbar |
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| DESD5V0S1BL-7B | DIODES INCORPORATED |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 130W; 5.5÷9.5V; 12A; bidirectional; X1-DFN1006-2; Ch: 1 Type of diode: TVS Peak pulse power dissipation: 130W Max. off-state voltage: 5V Breakdown voltage: 5.5...9.5V Max. forward impulse current: 12A Semiconductor structure: bidirectional Case: X1-DFN1006-2 Mounting: SMD Leakage current: 0.1µA Kind of package: reel; tape Number of channels: 1 |
Produkt ist nicht verfügbar |
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DESD5V0U1BA-7 | DIODES INCORPORATED |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 5.5÷9.5V; 3A; bidirectional; SOD323; reel,tape; Ch: 1 Type of diode: TVS Max. off-state voltage: 5V Breakdown voltage: 5.5...9.5V Max. forward impulse current: 3A Semiconductor structure: bidirectional Case: SOD323 Mounting: SMD Leakage current: 0.1µA Kind of package: reel; tape Number of channels: 1 |
Produkt ist nicht verfügbar |
| DMG2301LK-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.9A; Idm: -8A; 1.4W; SOT23
Mounting: SMD
On-state resistance: 298mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.4W
Polarisation: unipolar
Kind of package: reel; tape
Drain current: -1.9A
Drain-source voltage: -20V
Gate charge: 3.4nC
Case: SOT23
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: -8A
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.9A; Idm: -8A; 1.4W; SOT23
Mounting: SMD
On-state resistance: 298mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.4W
Polarisation: unipolar
Kind of package: reel; tape
Drain current: -1.9A
Drain-source voltage: -20V
Gate charge: 3.4nC
Case: SOT23
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: -8A
Produkt ist nicht verfügbar
| DMNH6022SSD-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 5.9A; Idm: 45A; 2.1W; SO8
Kind of package: reel; tape
Type of transistor: N-MOSFET
Case: SO8
On-state resistance: 30mΩ
Gate-source voltage: ±20V
Mounting: SMD
Pulsed drain current: 45A
Power dissipation: 2.1W
Gate charge: 32nC
Polarisation: unipolar
Drain current: 5.9A
Kind of channel: enhanced
Drain-source voltage: 60V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 5.9A; Idm: 45A; 2.1W; SO8
Kind of package: reel; tape
Type of transistor: N-MOSFET
Case: SO8
On-state resistance: 30mΩ
Gate-source voltage: ±20V
Mounting: SMD
Pulsed drain current: 45A
Power dissipation: 2.1W
Gate charge: 32nC
Polarisation: unipolar
Drain current: 5.9A
Kind of channel: enhanced
Drain-source voltage: 60V
Produkt ist nicht verfügbar
| DMNH6022SSDQ-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 5.9A; Idm: 45A; 2.1W; SO8
Kind of package: reel; tape
Type of transistor: N-MOSFET
Case: SO8
On-state resistance: 30mΩ
Gate-source voltage: ±20V
Mounting: SMD
Pulsed drain current: 45A
Power dissipation: 2.1W
Gate charge: 32nC
Polarisation: unipolar
Drain current: 5.9A
Kind of channel: enhanced
Drain-source voltage: 60V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 5.9A; Idm: 45A; 2.1W; SO8
Kind of package: reel; tape
Type of transistor: N-MOSFET
Case: SO8
On-state resistance: 30mΩ
Gate-source voltage: ±20V
Mounting: SMD
Pulsed drain current: 45A
Power dissipation: 2.1W
Gate charge: 32nC
Polarisation: unipolar
Drain current: 5.9A
Kind of channel: enhanced
Drain-source voltage: 60V
Produkt ist nicht verfügbar
| KBJ4005G |
|
Hersteller: DIODES INCORPORATED
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 50V; If: 4A; Ifsm: 120A; flat
Electrical mounting: THT
Max. off-state voltage: 50V
Load current: 4A
Max. forward impulse current: 120A
Kind of package: tube
Version: flat
Features of semiconductor devices: glass passivated
Type of bridge rectifier: single-phase
Case: KBJ
Leads: flat pin
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 50V; If: 4A; Ifsm: 120A; flat
Electrical mounting: THT
Max. off-state voltage: 50V
Load current: 4A
Max. forward impulse current: 120A
Kind of package: tube
Version: flat
Features of semiconductor devices: glass passivated
Type of bridge rectifier: single-phase
Case: KBJ
Leads: flat pin
Produkt ist nicht verfügbar
| ZXGD3009DYTA |
|
Hersteller: DIODES INCORPORATED
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOT363; -2÷2A; Ch: 1; 40VDC
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOT363
Output current: -2...2A
Number of channels: 1
Supply voltage: 40V DC
Mounting: SMD
Operating temperature: -55...150°C
Kind of package: reel; tape
Kind of output: non-inverting
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOT363; -2÷2A; Ch: 1; 40VDC
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOT363
Output current: -2...2A
Number of channels: 1
Supply voltage: 40V DC
Mounting: SMD
Operating temperature: -55...150°C
Kind of package: reel; tape
Kind of output: non-inverting
auf Bestellung 1660 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 148+ | 0.49 EUR |
| 225+ | 0.32 EUR |
| 288+ | 0.25 EUR |
| 414+ | 0.17 EUR |
| 556+ | 0.13 EUR |
| 589+ | 0.12 EUR |
| ZXGD3101T8TA |
|
Hersteller: DIODES INCORPORATED
Category: MOSFET/IGBT drivers
Description: IC: driver; high-/low-side,MOSFET gate driver; SM8; -2.5÷2.5A
Type of integrated circuit: driver
Kind of integrated circuit: high-/low-side; MOSFET gate driver
Case: SM8
Output current: -2.5...2.5A
Number of channels: 1
Supply voltage: 5...15V DC
Mounting: SMD
Operating temperature: -40...150°C
Impulse rise time: 305ns
Pulse fall time: 20ns
Kind of package: reel; tape
Category: MOSFET/IGBT drivers
Description: IC: driver; high-/low-side,MOSFET gate driver; SM8; -2.5÷2.5A
Type of integrated circuit: driver
Kind of integrated circuit: high-/low-side; MOSFET gate driver
Case: SM8
Output current: -2.5...2.5A
Number of channels: 1
Supply voltage: 5...15V DC
Mounting: SMD
Operating temperature: -40...150°C
Impulse rise time: 305ns
Pulse fall time: 20ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
| ZXGD3103N8TC |
|
Hersteller: DIODES INCORPORATED
Category: MOSFET/IGBT drivers
Description: IC: driver; high-/low-side,MOSFET gate driver; SO8; -6÷2.5A; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: high-/low-side; MOSFET gate driver
Case: SO8
Output current: -6...2.5A
Number of channels: 1
Supply voltage: 5...15V DC
Mounting: SMD
Operating temperature: -40...150°C
Kind of package: reel; tape
Voltage class: 180V
Category: MOSFET/IGBT drivers
Description: IC: driver; high-/low-side,MOSFET gate driver; SO8; -6÷2.5A; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: high-/low-side; MOSFET gate driver
Case: SO8
Output current: -6...2.5A
Number of channels: 1
Supply voltage: 5...15V DC
Mounting: SMD
Operating temperature: -40...150°C
Kind of package: reel; tape
Voltage class: 180V
Produkt ist nicht verfügbar
| B370-13-F |
|
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 70V; 3A; SMC; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 70V
Load current: 3A
Semiconductor structure: single diode
Capacitance: 0.1nF
Case: SMC
Kind of package: reel; tape
Max. forward impulse current: 100A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 70V; 3A; SMC; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 70V
Load current: 3A
Semiconductor structure: single diode
Capacitance: 0.1nF
Case: SMC
Kind of package: reel; tape
Max. forward impulse current: 100A
auf Bestellung 2367 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 140+ | 0.51 EUR |
| 155+ | 0.46 EUR |
| 201+ | 0.36 EUR |
| 212+ | 0.34 EUR |
| 2N7002Q-7-F |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.105A; Idm: 0.8A; 0.37W; SOT23
Kind of package: reel; tape
Pulsed drain current: 0.8A
Power dissipation: 0.37W
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Drain current: 0.105A
Kind of channel: enhanced
Drain-source voltage: 60V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: SOT23
On-state resistance: 7.5Ω
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.105A; Idm: 0.8A; 0.37W; SOT23
Kind of package: reel; tape
Pulsed drain current: 0.8A
Power dissipation: 0.37W
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Drain current: 0.105A
Kind of channel: enhanced
Drain-source voltage: 60V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: SOT23
On-state resistance: 7.5Ω
Mounting: SMD
Produkt ist nicht verfügbar
| 2N7002T-7-F |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.115A; 0.15W; SOT523
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.115A
Power dissipation: 0.15W
Case: SOT523
Gate-source voltage: ±20V
On-state resistance: 7.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.115A; 0.15W; SOT523
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.115A
Power dissipation: 0.15W
Case: SOT523
Gate-source voltage: ±20V
On-state resistance: 7.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 12730 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 370+ | 0.19 EUR |
| 740+ | 0.097 EUR |
| 820+ | 0.087 EUR |
| 1070+ | 0.067 EUR |
| 1135+ | 0.063 EUR |
| DMP4050SSS-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -4.7A; 1.56W; SO8
Case: SO8
Mounting: SMD
Drain-source voltage: -40V
Drain current: -4.7A
On-state resistance: 79mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.56W
Polarisation: unipolar
Kind of package: reel; tape
Kind of channel: enhanced
Gate-source voltage: ±20V
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -4.7A; 1.56W; SO8
Case: SO8
Mounting: SMD
Drain-source voltage: -40V
Drain current: -4.7A
On-state resistance: 79mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.56W
Polarisation: unipolar
Kind of package: reel; tape
Kind of channel: enhanced
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
| DMP2018LFK-13 |
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -10.3A; Idm: -90A; 1.3W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -10.3A
Pulsed drain current: -90A
Power dissipation: 1.3W
Case: U-DFN2523-6
Gate-source voltage: ±12V
On-state resistance: 25mΩ
Mounting: SMD
Gate charge: 113nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -10.3A; Idm: -90A; 1.3W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -10.3A
Pulsed drain current: -90A
Power dissipation: 1.3W
Case: U-DFN2523-6
Gate-source voltage: ±12V
On-state resistance: 25mΩ
Mounting: SMD
Gate charge: 113nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| DMG3415UFY4Q-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -16V; -2.2A; Idm: -12A; 1.35W
Mounting: SMD
Case: X2-DFN2015-3
Gate charge: 10nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -12A
Drain-source voltage: -16V
Drain current: -2.2A
On-state resistance: 65mΩ
Type of transistor: P-MOSFET
Application: automotive industry
Power dissipation: 1.35W
Polarisation: unipolar
Kind of package: reel; tape
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -16V; -2.2A; Idm: -12A; 1.35W
Mounting: SMD
Case: X2-DFN2015-3
Gate charge: 10nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -12A
Drain-source voltage: -16V
Drain current: -2.2A
On-state resistance: 65mΩ
Type of transistor: P-MOSFET
Application: automotive industry
Power dissipation: 1.35W
Polarisation: unipolar
Kind of package: reel; tape
Produkt ist nicht verfügbar
| 74LVC126AS14-13 |
|
Hersteller: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; SMD; SO14; LVC; -40÷125°C
Supply voltage: 1.65...5.5V DC
Mounting: SMD
Operating temperature: -40...125°C
Manufacturer series: LVC
Kind of output: 3-state
Number of channels: 4
Kind of integrated circuit: buffer; non-inverting
Case: SO14
Type of integrated circuit: digital
Quiescent current: 40µA
Kind of package: reel; tape
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; SMD; SO14; LVC; -40÷125°C
Supply voltage: 1.65...5.5V DC
Mounting: SMD
Operating temperature: -40...125°C
Manufacturer series: LVC
Kind of output: 3-state
Number of channels: 4
Kind of integrated circuit: buffer; non-inverting
Case: SO14
Type of integrated circuit: digital
Quiescent current: 40µA
Kind of package: reel; tape
Produkt ist nicht verfügbar
| 74LVC126AT14-13 |
|
Hersteller: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer; Ch: 4; CMOS; SMD; TSSOP14; 1.65÷5.5VDC; LVC
Type of integrated circuit: digital
Kind of integrated circuit: buffer
Number of channels: 4
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of output: 3-state
Kind of package: reel; tape
Family: LVC
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer; Ch: 4; CMOS; SMD; TSSOP14; 1.65÷5.5VDC; LVC
Type of integrated circuit: digital
Kind of integrated circuit: buffer
Number of channels: 4
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of output: 3-state
Kind of package: reel; tape
Family: LVC
Produkt ist nicht verfügbar
| AZ23C5V6-7-F |
|
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 5.6V; SMD; reel,tape; SOT23
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: common anode; double
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 5.6V; SMD; reel,tape; SOT23
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: common anode; double
auf Bestellung 2800 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 490+ | 0.15 EUR |
| 970+ | 0.074 EUR |
| 1080+ | 0.067 EUR |
| 1430+ | 0.05 EUR |
| 1510+ | 0.048 EUR |
| AL17050WT-7 |
|
Hersteller: DIODES INCORPORATED
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DC/DC converter; Uin: 20÷400VDC; Uout: 3.4÷20VDC; 0.06A
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 20...400V DC
Output voltage: 3.4...20V DC
Output current: 60mA
Case: TSOT25
Mounting: SMD
Frequency: 70kHz
Topology: buck
Operating temperature: -40...105°C
Kind of package: reel; tape
Efficiency: 50%
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DC/DC converter; Uin: 20÷400VDC; Uout: 3.4÷20VDC; 0.06A
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 20...400V DC
Output voltage: 3.4...20V DC
Output current: 60mA
Case: TSOT25
Mounting: SMD
Frequency: 70kHz
Topology: buck
Operating temperature: -40...105°C
Kind of package: reel; tape
Efficiency: 50%
auf Bestellung 2610 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 120+ | 0.6 EUR |
| 147+ | 0.49 EUR |
| 258+ | 0.28 EUR |
| 273+ | 0.26 EUR |
| 1000+ | 0.25 EUR |
| MURS140-13-F |
|
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 50ns; SMB; Ufmax: 1.25V; Ifsm: 35A
Mounting: SMD
Load current: 1A
Semiconductor structure: single diode
Reverse recovery time: 50ns
Max. forward impulse current: 35A
Capacitance: 10pF
Kind of package: reel; tape
Type of diode: rectifying
Case: SMB
Max. off-state voltage: 0.4kV
Max. forward voltage: 1.25V
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 50ns; SMB; Ufmax: 1.25V; Ifsm: 35A
Mounting: SMD
Load current: 1A
Semiconductor structure: single diode
Reverse recovery time: 50ns
Max. forward impulse current: 35A
Capacitance: 10pF
Kind of package: reel; tape
Type of diode: rectifying
Case: SMB
Max. off-state voltage: 0.4kV
Max. forward voltage: 1.25V
Produkt ist nicht verfügbar
| GBU6005 |
|
Hersteller: DIODES INCORPORATED
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 50V; If: 6A; Ifsm: 175A; flat
Version: flat
Kind of package: tube
Electrical mounting: THT
Load current: 6A
Max. off-state voltage: 50V
Leads: flat pin
Case: GBU
Features of semiconductor devices: glass passivated
Max. forward impulse current: 175A
Type of bridge rectifier: single-phase
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 50V; If: 6A; Ifsm: 175A; flat
Version: flat
Kind of package: tube
Electrical mounting: THT
Load current: 6A
Max. off-state voltage: 50V
Leads: flat pin
Case: GBU
Features of semiconductor devices: glass passivated
Max. forward impulse current: 175A
Type of bridge rectifier: single-phase
Produkt ist nicht verfügbar
| GBU601 |
|
Hersteller: DIODES INCORPORATED
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 100V; If: 6A; Ifsm: 175A
Version: flat
Kind of package: tube
Electrical mounting: THT
Load current: 6A
Max. off-state voltage: 100V
Leads: flat pin
Case: GBU
Features of semiconductor devices: glass passivated
Max. forward impulse current: 175A
Type of bridge rectifier: single-phase
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 100V; If: 6A; Ifsm: 175A
Version: flat
Kind of package: tube
Electrical mounting: THT
Load current: 6A
Max. off-state voltage: 100V
Leads: flat pin
Case: GBU
Features of semiconductor devices: glass passivated
Max. forward impulse current: 175A
Type of bridge rectifier: single-phase
Produkt ist nicht verfügbar
| GBU602 |
|
Hersteller: DIODES INCORPORATED
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 200V; If: 6A; Ifsm: 175A
Version: flat
Kind of package: tube
Electrical mounting: THT
Load current: 6A
Max. off-state voltage: 200V
Leads: flat pin
Case: GBU
Features of semiconductor devices: glass passivated
Max. forward impulse current: 175A
Type of bridge rectifier: single-phase
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 200V; If: 6A; Ifsm: 175A
Version: flat
Kind of package: tube
Electrical mounting: THT
Load current: 6A
Max. off-state voltage: 200V
Leads: flat pin
Case: GBU
Features of semiconductor devices: glass passivated
Max. forward impulse current: 175A
Type of bridge rectifier: single-phase
Produkt ist nicht verfügbar
| GBU604 |
|
Hersteller: DIODES INCORPORATED
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 6A; Ifsm: 175A
Version: flat
Kind of package: tube
Electrical mounting: THT
Load current: 6A
Max. off-state voltage: 0.4kV
Leads: flat pin
Case: GBU
Features of semiconductor devices: glass passivated
Max. forward impulse current: 175A
Type of bridge rectifier: single-phase
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 6A; Ifsm: 175A
Version: flat
Kind of package: tube
Electrical mounting: THT
Load current: 6A
Max. off-state voltage: 0.4kV
Leads: flat pin
Case: GBU
Features of semiconductor devices: glass passivated
Max. forward impulse current: 175A
Type of bridge rectifier: single-phase
Produkt ist nicht verfügbar
| GBU608 |
|
Hersteller: DIODES INCORPORATED
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 6A; Ifsm: 175A
Version: flat
Kind of package: tube
Electrical mounting: THT
Load current: 6A
Max. off-state voltage: 0.8kV
Leads: flat pin
Case: GBU
Features of semiconductor devices: glass passivated
Max. forward impulse current: 175A
Type of bridge rectifier: single-phase
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 6A; Ifsm: 175A
Version: flat
Kind of package: tube
Electrical mounting: THT
Load current: 6A
Max. off-state voltage: 0.8kV
Leads: flat pin
Case: GBU
Features of semiconductor devices: glass passivated
Max. forward impulse current: 175A
Type of bridge rectifier: single-phase
Produkt ist nicht verfügbar
| GBU610 |
|
Hersteller: DIODES INCORPORATED
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 6A; Ifsm: 175A; flat
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 6A
Max. forward impulse current: 175A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Features of semiconductor devices: glass passivated
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 6A; Ifsm: 175A; flat
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 6A
Max. forward impulse current: 175A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Features of semiconductor devices: glass passivated
auf Bestellung 24 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 24+ | 2.97 EUR |
| S2M-13-F |
|
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1.5A; SMB; Ufmax: 1.15V; Ifsm: 50A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1.5A
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Capacitance: 20pF
Case: SMB
Max. forward voltage: 1.15V
Max. forward impulse current: 50A
Leakage current: 125µA
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1.5A; SMB; Ufmax: 1.15V; Ifsm: 50A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1.5A
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Capacitance: 20pF
Case: SMB
Max. forward voltage: 1.15V
Max. forward impulse current: 50A
Leakage current: 125µA
Kind of package: reel; tape
auf Bestellung 535 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 315+ | 0.23 EUR |
| 535+ | 0.13 EUR |
| MBRD20200CT-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 200V; 10Ax2; DPAK; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: DPAK
Kind of package: reel; tape
Max. forward impulse current: 150A
Max. forward voltage: 0.9V
Leakage current: 1mA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 200V; 10Ax2; DPAK; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: DPAK
Kind of package: reel; tape
Max. forward impulse current: 150A
Max. forward voltage: 0.9V
Leakage current: 1mA
Produkt ist nicht verfügbar
| MJD32C-13 |
|
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 3A; DPAK,TO252
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Case: DPAK; TO252
Current gain: 10...50
Mounting: SMD
Kind of package: reel; tape
Frequency: 3MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 3A; DPAK,TO252
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Case: DPAK; TO252
Current gain: 10...50
Mounting: SMD
Kind of package: reel; tape
Frequency: 3MHz
Produkt ist nicht verfügbar
| MJD32CQ-13 |
|
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 3A; 15W; DPAK; automotive industry
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Power dissipation: 15W
Case: DPAK
Current gain: 10...50
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 3A; 15W; DPAK; automotive industry
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Power dissipation: 15W
Case: DPAK
Current gain: 10...50
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
| MJD32CUQ-13 |
|
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 3A; 15W; DPAK; automotive industry
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Power dissipation: 15W
Case: DPAK
Pulsed collector current: 5A
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 3A; 15W; DPAK; automotive industry
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Power dissipation: 15W
Case: DPAK
Pulsed collector current: 5A
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
| DMN3010LFG-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 11A; Idm: 90A; 2.4W
Drain-source voltage: 30V
Drain current: 11A
On-state resistance: 10.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.4W
Polarisation: unipolar
Kind of package: reel; tape
Case: PowerDI3333-8
Gate charge: 37nC
Mounting: SMD
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 90A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 11A; Idm: 90A; 2.4W
Drain-source voltage: 30V
Drain current: 11A
On-state resistance: 10.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.4W
Polarisation: unipolar
Kind of package: reel; tape
Case: PowerDI3333-8
Gate charge: 37nC
Mounting: SMD
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 90A
Produkt ist nicht verfügbar
| DMN3010LFG-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 11A; Idm: 90A; 2.4W
Drain-source voltage: 30V
Drain current: 11A
On-state resistance: 10.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.4W
Polarisation: unipolar
Kind of package: reel; tape
Case: PowerDI3333-8
Gate charge: 37nC
Mounting: SMD
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 90A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 11A; Idm: 90A; 2.4W
Drain-source voltage: 30V
Drain current: 11A
On-state resistance: 10.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.4W
Polarisation: unipolar
Kind of package: reel; tape
Case: PowerDI3333-8
Gate charge: 37nC
Mounting: SMD
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 90A
Produkt ist nicht verfügbar
| DMN3010LK3-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 10.5A; Idm: 90A; 2.4W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 10.5A
Pulsed drain current: 90A
Power dissipation: 2.4W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 11.5mΩ
Mounting: SMD
Gate charge: 37nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 10.5A; Idm: 90A; 2.4W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 10.5A
Pulsed drain current: 90A
Power dissipation: 2.4W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 11.5mΩ
Mounting: SMD
Gate charge: 37nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| DMN3010LSS-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 13A; Idm: 64A; 2.5W; SO8
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Pulsed drain current: 64A
Power dissipation: 2.5W
Gate charge: 43.7nC
Polarisation: unipolar
Drain current: 13A
Kind of channel: enhanced
Drain-source voltage: 30V
Type of transistor: N-MOSFET
On-state resistance: 13mΩ
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 13A; Idm: 64A; 2.5W; SO8
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Pulsed drain current: 64A
Power dissipation: 2.5W
Gate charge: 43.7nC
Polarisation: unipolar
Drain current: 13A
Kind of channel: enhanced
Drain-source voltage: 30V
Type of transistor: N-MOSFET
On-state resistance: 13mΩ
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
| DMN3013LDG-7 |
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 7.6A; Idm: 80A; 1.25W
Case: PowerDI3333-8
Mounting: SMD
Kind of package: reel; tape
Pulsed drain current: 80A
Power dissipation: 1.25W
Gate charge: 5.7nC
Polarisation: unipolar
Drain current: 7.6A
Kind of channel: enhanced
Drain-source voltage: 30V
Type of transistor: N-MOSFET
On-state resistance: 17.7mΩ
Gate-source voltage: ±10V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 7.6A; Idm: 80A; 1.25W
Case: PowerDI3333-8
Mounting: SMD
Kind of package: reel; tape
Pulsed drain current: 80A
Power dissipation: 1.25W
Gate charge: 5.7nC
Polarisation: unipolar
Drain current: 7.6A
Kind of channel: enhanced
Drain-source voltage: 30V
Type of transistor: N-MOSFET
On-state resistance: 17.7mΩ
Gate-source voltage: ±10V
Produkt ist nicht verfügbar
| DMN3013LFG-7 |
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 7.6A; Idm: 80A; 1.25W
Case: PowerDI3333-8
Mounting: SMD
Kind of package: reel; tape
Pulsed drain current: 80A
Power dissipation: 1.25W
Gate charge: 5.7nC
Polarisation: unipolar
Drain current: 7.6A
Kind of channel: enhanced
Drain-source voltage: 30V
Type of transistor: N-MOSFET x2
On-state resistance: 17.7mΩ
Gate-source voltage: ±10V
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 7.6A; Idm: 80A; 1.25W
Case: PowerDI3333-8
Mounting: SMD
Kind of package: reel; tape
Pulsed drain current: 80A
Power dissipation: 1.25W
Gate charge: 5.7nC
Polarisation: unipolar
Drain current: 7.6A
Kind of channel: enhanced
Drain-source voltage: 30V
Type of transistor: N-MOSFET x2
On-state resistance: 17.7mΩ
Gate-source voltage: ±10V
Produkt ist nicht verfügbar
| DMN3015LSD-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 9A; Idm: 80A; 1W; SO8
Polarisation: unipolar
On-state resistance: 18mΩ
Kind of package: reel; tape
Drain current: 9A
Drain-source voltage: 30V
Case: SO8
Gate charge: 25.1nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 80A
Type of transistor: N-MOSFET
Mounting: SMD
Power dissipation: 1W
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 9A; Idm: 80A; 1W; SO8
Polarisation: unipolar
On-state resistance: 18mΩ
Kind of package: reel; tape
Drain current: 9A
Drain-source voltage: 30V
Case: SO8
Gate charge: 25.1nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 80A
Type of transistor: N-MOSFET
Mounting: SMD
Power dissipation: 1W
Produkt ist nicht verfügbar
| DMN3016LDN-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 7.3A; Idm: 45A; 1.6W
Case: V-DFN3030-8
Mounting: SMD
Kind of package: reel; tape
Pulsed drain current: 45A
Power dissipation: 1.6W
Gate charge: 25.1nC
Polarisation: unipolar
Drain current: 7.3A
Kind of channel: enhanced
Drain-source voltage: 30V
Type of transistor: N-MOSFET
On-state resistance: 24mΩ
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 7.3A; Idm: 45A; 1.6W
Case: V-DFN3030-8
Mounting: SMD
Kind of package: reel; tape
Pulsed drain current: 45A
Power dissipation: 1.6W
Gate charge: 25.1nC
Polarisation: unipolar
Drain current: 7.3A
Kind of channel: enhanced
Drain-source voltage: 30V
Type of transistor: N-MOSFET
On-state resistance: 24mΩ
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
| DMN3016LDN-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 7.3A; Idm: 45A; 1.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 7.3A
Pulsed drain current: 45A
Power dissipation: 1.6W
Case: V-DFN3030-8
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: SMD
Gate charge: 25.1nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 7.3A; Idm: 45A; 1.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 7.3A
Pulsed drain current: 45A
Power dissipation: 1.6W
Case: V-DFN3030-8
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: SMD
Gate charge: 25.1nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| DMN3016LDV-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 17A; Idm: 70A; 1.8W
Case: PowerDI3333-8
Mounting: SMD
Kind of package: reel; tape
Pulsed drain current: 70A
Power dissipation: 1.8W
Gate charge: 21nC
Polarisation: unipolar
Drain current: 17A
Kind of channel: enhanced
Drain-source voltage: 30V
Type of transistor: N-MOSFET
On-state resistance: 17mΩ
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 17A; Idm: 70A; 1.8W
Case: PowerDI3333-8
Mounting: SMD
Kind of package: reel; tape
Pulsed drain current: 70A
Power dissipation: 1.8W
Gate charge: 21nC
Polarisation: unipolar
Drain current: 17A
Kind of channel: enhanced
Drain-source voltage: 30V
Type of transistor: N-MOSFET
On-state resistance: 17mΩ
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
| DMN3016LDV-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 17A; Idm: 70A; 1.8W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 17A
Pulsed drain current: 70A
Power dissipation: 1.8W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 17mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 17A; Idm: 70A; 1.8W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 17A
Pulsed drain current: 70A
Power dissipation: 1.8W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 17mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| DMN3016LFDE-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 9A; Idm: 90A; 1.3W; U-DFN2020-6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 9A
Pulsed drain current: 90A
Power dissipation: 1.3W
Case: U-DFN2020-6
Gate-source voltage: ±20V
On-state resistance: 16mΩ
Mounting: SMD
Gate charge: 25.1nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 9A; Idm: 90A; 1.3W; U-DFN2020-6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 9A
Pulsed drain current: 90A
Power dissipation: 1.3W
Case: U-DFN2020-6
Gate-source voltage: ±20V
On-state resistance: 16mΩ
Mounting: SMD
Gate charge: 25.1nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| DMN3016LFDE-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 9A; Idm: 90A; 1.3W; U-DFN2020-6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 9A
Pulsed drain current: 90A
Power dissipation: 1.3W
Case: U-DFN2020-6
Gate-source voltage: ±20V
On-state resistance: 16mΩ
Mounting: SMD
Gate charge: 25.1nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 9A; Idm: 90A; 1.3W; U-DFN2020-6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 9A
Pulsed drain current: 90A
Power dissipation: 1.3W
Case: U-DFN2020-6
Gate-source voltage: ±20V
On-state resistance: 16mΩ
Mounting: SMD
Gate charge: 25.1nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| DMN3016LFDF-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 8A; Idm: 50A; 0.47W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 8A
Pulsed drain current: 50A
Power dissipation: 0.47W
Case: U-DFN2020-6
Gate-source voltage: ±20V
On-state resistance: 16mΩ
Mounting: SMD
Gate charge: 25.1nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 8A; Idm: 50A; 0.47W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 8A
Pulsed drain current: 50A
Power dissipation: 0.47W
Case: U-DFN2020-6
Gate-source voltage: ±20V
On-state resistance: 16mΩ
Mounting: SMD
Gate charge: 25.1nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| DMN3016LK3-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 13.6A; Idm: 90A; 1.8W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 13.6A
Pulsed drain current: 90A
Power dissipation: 1.8W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 16mΩ
Mounting: SMD
Gate charge: 25.1nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 13.6A; Idm: 90A; 1.8W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 13.6A
Pulsed drain current: 90A
Power dissipation: 1.8W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 16mΩ
Mounting: SMD
Gate charge: 25.1nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| DMN3016LPS-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 10.8A; Idm: 70A; 2.75W
Mounting: SMD
Case: PowerDI5060-8
Kind of package: reel; tape
Power dissipation: 2.75W
On-state resistance: 16mΩ
Polarisation: unipolar
Drain current: 10.8A
Drain-source voltage: 30V
Gate charge: 25.1nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Type of transistor: N-MOSFET
Pulsed drain current: 70A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 10.8A; Idm: 70A; 2.75W
Mounting: SMD
Case: PowerDI5060-8
Kind of package: reel; tape
Power dissipation: 2.75W
On-state resistance: 16mΩ
Polarisation: unipolar
Drain current: 10.8A
Drain-source voltage: 30V
Gate charge: 25.1nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Type of transistor: N-MOSFET
Pulsed drain current: 70A
Produkt ist nicht verfügbar
| DMN3018SFGQ-13 |
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 7A; Idm: 60A; 2.2W
Mounting: SMD
Drain-source voltage: 30V
Drain current: 7A
On-state resistance: 35mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.2W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 13.2nC
Kind of channel: enhanced
Gate-source voltage: ±25V
Pulsed drain current: 60A
Case: PowerDI3333-8
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 7A; Idm: 60A; 2.2W
Mounting: SMD
Drain-source voltage: 30V
Drain current: 7A
On-state resistance: 35mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.2W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 13.2nC
Kind of channel: enhanced
Gate-source voltage: ±25V
Pulsed drain current: 60A
Case: PowerDI3333-8
Produkt ist nicht verfügbar
| DMN3018SSD-13 |
|
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 5.2A; 1.5W; SO8
Polarisation: unipolar
On-state resistance: 30mΩ
Kind of package: reel; tape
Drain current: 5.2A
Drain-source voltage: 30V
Case: SO8
Features of semiconductor devices: ESD protected gate
Kind of channel: enhanced
Gate-source voltage: ±20V
Type of transistor: N-MOSFET x2
Mounting: SMD
Power dissipation: 1.5W
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 5.2A; 1.5W; SO8
Polarisation: unipolar
On-state resistance: 30mΩ
Kind of package: reel; tape
Drain current: 5.2A
Drain-source voltage: 30V
Case: SO8
Features of semiconductor devices: ESD protected gate
Kind of channel: enhanced
Gate-source voltage: ±20V
Type of transistor: N-MOSFET x2
Mounting: SMD
Power dissipation: 1.5W
auf Bestellung 865 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 109+ | 0.66 EUR |
| 130+ | 0.55 EUR |
| 265+ | 0.27 EUR |
| 280+ | 0.26 EUR |
| 500+ | 0.25 EUR |
| DMN3018SSS-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.8A; Idm: 60A; 1.1W; SO8
Mounting: SMD
Drain-source voltage: 30V
Drain current: 5.8A
On-state resistance: 35mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.1W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 13.2nC
Kind of channel: enhanced
Gate-source voltage: ±25V
Pulsed drain current: 60A
Case: SO8
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.8A; Idm: 60A; 1.1W; SO8
Mounting: SMD
Drain-source voltage: 30V
Drain current: 5.8A
On-state resistance: 35mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.1W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 13.2nC
Kind of channel: enhanced
Gate-source voltage: ±25V
Pulsed drain current: 60A
Case: SO8
Produkt ist nicht verfügbar
| DMTH8028LPSW-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 29.5A; Idm: 166.8A; 3.9W
Mounting: SMD
Drain-source voltage: 80V
Drain current: 29.5A
On-state resistance: 41mΩ
Type of transistor: N-MOSFET
Power dissipation: 3.9W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 10.4nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 166.8A
Case: PowerDI5060-8
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 29.5A; Idm: 166.8A; 3.9W
Mounting: SMD
Drain-source voltage: 80V
Drain current: 29.5A
On-state resistance: 41mΩ
Type of transistor: N-MOSFET
Power dissipation: 3.9W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 10.4nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 166.8A
Case: PowerDI5060-8
Produkt ist nicht verfügbar
| DMTH8028LPSWQ-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 29.5A; Idm: 166.8A; 3.9W
Mounting: SMD
Drain-source voltage: 80V
Drain current: 29.5A
On-state resistance: 41mΩ
Type of transistor: N-MOSFET
Power dissipation: 3.9W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 10.4nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 166.8A
Case: PowerDI5060-8
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 29.5A; Idm: 166.8A; 3.9W
Mounting: SMD
Drain-source voltage: 80V
Drain current: 29.5A
On-state resistance: 41mΩ
Type of transistor: N-MOSFET
Power dissipation: 3.9W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 10.4nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 166.8A
Case: PowerDI5060-8
Produkt ist nicht verfügbar
| ZHT431F01TA |
|
Hersteller: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±1%; SOT23; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Tolerance: ±1%
Mounting: SMD
Case: SOT23
Operating temperature: -40...85°C
Kind of package: reel; tape
Maximum output current: 0.1A
Operating voltage: 2.5...20V
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±1%; SOT23; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Tolerance: ±1%
Mounting: SMD
Case: SOT23
Operating temperature: -40...85°C
Kind of package: reel; tape
Maximum output current: 0.1A
Operating voltage: 2.5...20V
Produkt ist nicht verfügbar
| ZHT431F02TA |
|
Hersteller: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±2%; SOT23; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Tolerance: ±2%
Mounting: SMD
Case: SOT23
Operating temperature: -55...125°C
Kind of package: reel; tape
Maximum output current: 0.1A
Operating voltage: 2.5...20V
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±2%; SOT23; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Tolerance: ±2%
Mounting: SMD
Case: SOT23
Operating temperature: -55...125°C
Kind of package: reel; tape
Maximum output current: 0.1A
Operating voltage: 2.5...20V
Produkt ist nicht verfügbar
| ZHT431FMTA |
|
Hersteller: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±0.5%; SOT23; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Tolerance: ±0.5%
Mounting: SMD
Case: SOT23
Operating temperature: -55...125°C
Kind of package: reel; tape
Maximum output current: 0.1A
Operating voltage: 2.5...20V
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±0.5%; SOT23; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Tolerance: ±0.5%
Mounting: SMD
Case: SOT23
Operating temperature: -55...125°C
Kind of package: reel; tape
Maximum output current: 0.1A
Operating voltage: 2.5...20V
Produkt ist nicht verfügbar
| D5V0F4U6S-7 |
|
Hersteller: DIODES INCORPORATED
Category: Transil diodes - arrays
Description: Diode: TVS array; 6V; 3A; SOT363; Ch: 4; reel,tape
Type of diode: TVS array
Breakdown voltage: 6V
Max. forward impulse current: 3A
Mounting: SMD
Case: SOT363
Max. off-state voltage: 5.5V
Leakage current: 0.2µA
Number of channels: 4
Kind of package: reel; tape
Category: Transil diodes - arrays
Description: Diode: TVS array; 6V; 3A; SOT363; Ch: 4; reel,tape
Type of diode: TVS array
Breakdown voltage: 6V
Max. forward impulse current: 3A
Mounting: SMD
Case: SOT363
Max. off-state voltage: 5.5V
Leakage current: 0.2µA
Number of channels: 4
Kind of package: reel; tape
Produkt ist nicht verfügbar
| D5V0F4U6V-7 |
|
Hersteller: DIODES INCORPORATED
Category: Transil diodes - arrays
Description: Diode: TVS array; 6V; 3A; SOT563; Ch: 4; reel,tape
Type of diode: TVS array
Breakdown voltage: 6V
Max. forward impulse current: 3A
Mounting: SMD
Case: SOT563
Max. off-state voltage: 5.5V
Leakage current: 0.2µA
Number of channels: 4
Kind of package: reel; tape
Category: Transil diodes - arrays
Description: Diode: TVS array; 6V; 3A; SOT563; Ch: 4; reel,tape
Type of diode: TVS array
Breakdown voltage: 6V
Max. forward impulse current: 3A
Mounting: SMD
Case: SOT563
Max. off-state voltage: 5.5V
Leakage current: 0.2µA
Number of channels: 4
Kind of package: reel; tape
Produkt ist nicht verfügbar
| D5V0L1B2LP-7B |
|
Hersteller: DIODES INCORPORATED
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 84W; 6÷8V; 6A; bidirectional; X1-DFN1006-2; reel,tape
Type of diode: TVS
Breakdown voltage: 6...8V
Max. forward impulse current: 6A
Peak pulse power dissipation: 84W
Semiconductor structure: bidirectional
Mounting: SMD
Case: X1-DFN1006-2
Max. off-state voltage: 5V
Leakage current: 0.1µA
Number of channels: 1
Kind of package: reel; tape
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 84W; 6÷8V; 6A; bidirectional; X1-DFN1006-2; reel,tape
Type of diode: TVS
Breakdown voltage: 6...8V
Max. forward impulse current: 6A
Peak pulse power dissipation: 84W
Semiconductor structure: bidirectional
Mounting: SMD
Case: X1-DFN1006-2
Max. off-state voltage: 5V
Leakage current: 0.1µA
Number of channels: 1
Kind of package: reel; tape
Produkt ist nicht verfügbar
| DESD5V0S1BA-7 |
|
Hersteller: DIODES INCORPORATED
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 130W; 5.5÷9.5V; 12A; bidirectional; SOD323; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 130W
Max. off-state voltage: 5V
Breakdown voltage: 5.5...9.5V
Max. forward impulse current: 12A
Semiconductor structure: bidirectional
Case: SOD323
Mounting: SMD
Leakage current: 0.1µA
Kind of package: reel; tape
Number of channels: 1
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 130W; 5.5÷9.5V; 12A; bidirectional; SOD323; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 130W
Max. off-state voltage: 5V
Breakdown voltage: 5.5...9.5V
Max. forward impulse current: 12A
Semiconductor structure: bidirectional
Case: SOD323
Mounting: SMD
Leakage current: 0.1µA
Kind of package: reel; tape
Number of channels: 1
auf Bestellung 360 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 360+ | 0.2 EUR |
| DESD5V0S1BB-7 |
|
Hersteller: DIODES INCORPORATED
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 130W; 5.5÷9.5V; 12A; bidirectional; SOD523; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 130W
Max. off-state voltage: 5V
Breakdown voltage: 5.5...9.5V
Max. forward impulse current: 12A
Semiconductor structure: bidirectional
Case: SOD523
Mounting: SMD
Leakage current: 0.1µA
Kind of package: reel; tape
Number of channels: 1
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 130W; 5.5÷9.5V; 12A; bidirectional; SOD523; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 130W
Max. off-state voltage: 5V
Breakdown voltage: 5.5...9.5V
Max. forward impulse current: 12A
Semiconductor structure: bidirectional
Case: SOD523
Mounting: SMD
Leakage current: 0.1µA
Kind of package: reel; tape
Number of channels: 1
Produkt ist nicht verfügbar
| DESD5V0S1BL-7B |
|
Hersteller: DIODES INCORPORATED
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 130W; 5.5÷9.5V; 12A; bidirectional; X1-DFN1006-2; Ch: 1
Type of diode: TVS
Peak pulse power dissipation: 130W
Max. off-state voltage: 5V
Breakdown voltage: 5.5...9.5V
Max. forward impulse current: 12A
Semiconductor structure: bidirectional
Case: X1-DFN1006-2
Mounting: SMD
Leakage current: 0.1µA
Kind of package: reel; tape
Number of channels: 1
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 130W; 5.5÷9.5V; 12A; bidirectional; X1-DFN1006-2; Ch: 1
Type of diode: TVS
Peak pulse power dissipation: 130W
Max. off-state voltage: 5V
Breakdown voltage: 5.5...9.5V
Max. forward impulse current: 12A
Semiconductor structure: bidirectional
Case: X1-DFN1006-2
Mounting: SMD
Leakage current: 0.1µA
Kind of package: reel; tape
Number of channels: 1
Produkt ist nicht verfügbar
| DESD5V0U1BA-7 |
|
Hersteller: DIODES INCORPORATED
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 5.5÷9.5V; 3A; bidirectional; SOD323; reel,tape; Ch: 1
Type of diode: TVS
Max. off-state voltage: 5V
Breakdown voltage: 5.5...9.5V
Max. forward impulse current: 3A
Semiconductor structure: bidirectional
Case: SOD323
Mounting: SMD
Leakage current: 0.1µA
Kind of package: reel; tape
Number of channels: 1
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 5.5÷9.5V; 3A; bidirectional; SOD323; reel,tape; Ch: 1
Type of diode: TVS
Max. off-state voltage: 5V
Breakdown voltage: 5.5...9.5V
Max. forward impulse current: 3A
Semiconductor structure: bidirectional
Case: SOD323
Mounting: SMD
Leakage current: 0.1µA
Kind of package: reel; tape
Number of channels: 1
Produkt ist nicht verfügbar