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BCX55TA BCX55TA DIODES INCORPORATED BCX54x-DTE.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 1W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 1W
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
Produkt ist nicht verfügbar
74HCT138S16-13 DIODES INCORPORATED 74HCT138.pdf Category: Decoders, multiplexers, switches
Description: IC: digital; 3 to 8 line,line decoder,demultiplexer; Ch: 8; IN: 6
Type of integrated circuit: digital
Kind of integrated circuit: 3 to 8 line; demultiplexer; line decoder
Number of channels: 8
Number of inputs: 6
Technology: CMOS; TTL
Mounting: SMD
Case: SO16
Supply voltage: 4.5...5.5V DC
Family: HCT
Kind of package: reel; tape
Operating temperature: -40...150°C
Kind of output: push-pull
Kind of input: with Schmitt trigger
Produkt ist nicht verfügbar
74HCT138T16-13 DIODES INCORPORATED 74HCT138.pdf Category: Decoders, multiplexers, switches
Description: IC: digital; 3 to 8 line,line decoder,demultiplexer; Ch: 8; IN: 6
Type of integrated circuit: digital
Kind of integrated circuit: 3 to 8 line; demultiplexer; line decoder
Number of channels: 8
Number of inputs: 6
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP16
Supply voltage: 4.5...5.5V DC
Family: HCT
Kind of package: reel; tape
Operating temperature: -40...150°C
Kind of output: push-pull
Kind of input: with Schmitt trigger
Produkt ist nicht verfügbar
BAT54Q-7-F BAT54Q-7-F DIODES INCORPORATED Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 0.2A; 5ns; SOT23; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Reverse recovery time: 5ns
Semiconductor structure: single diode
Capacitance: 10pF
Max. forward voltage: 0.8V
Case: SOT23
Kind of package: reel; tape
Leakage current: 2µA
Max. forward impulse current: 0.6A
Power dissipation: 0.2W
Application: automotive industry
Produkt ist nicht verfügbar
BAT54T-7-F BAT54T-7-F DIODES INCORPORATED BAT54T_AT_CT_ST.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 0.2A; 5ns; SOT523; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Reverse recovery time: 5ns
Semiconductor structure: single diode
Capacitance: 10pF
Max. forward voltage: 1V
Case: SOT523
Kind of package: reel; tape
Leakage current: 2µA
Max. forward impulse current: 0.6A
Power dissipation: 0.15W
Produkt ist nicht verfügbar
BAT54DW-7-F BAT54DW-7-F DIODES INCORPORATED BAT54DW.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 0.2A; 5ns; SOT363; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Reverse recovery time: 5ns
Semiconductor structure: double independent
Capacitance: 10pF
Max. forward voltage: 1V
Case: SOT363
Kind of package: reel; tape
Leakage current: 2µA
Max. forward impulse current: 0.6A
Power dissipation: 0.2W
Produkt ist nicht verfügbar
KBJ410G KBJ410G DIODES INCORPORATED KBJ4005G_ser.pdf Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 4A; Ifsm: 120A; flat
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 4A
Max. forward impulse current: 120A
Version: flat
Case: KBJ
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Features of semiconductor devices: glass passivated
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
1+71.5 EUR
KBJ401G KBJ401G DIODES INCORPORATED KBJ4005G_ser.pdf Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 100V; If: 4A; Ifsm: 120A
Electrical mounting: THT
Max. off-state voltage: 100V
Load current: 4A
Max. forward impulse current: 120A
Kind of package: tube
Version: flat
Features of semiconductor devices: glass passivated
Type of bridge rectifier: single-phase
Case: KBJ
Leads: flat pin
Produkt ist nicht verfügbar
DMT8008LFG-7 DIODES INCORPORATED DMT8008LFG.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 13A; Idm: 192A; 2.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 13A
Pulsed drain current: 192A
Power dissipation: 2.5W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 10.4mΩ
Mounting: SMD
Gate charge: 37.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
DMT8008LPS-13 DIODES INCORPORATED DMT8008LPS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 66A; Idm: 330A; 2.8W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 66A
Pulsed drain current: 330A
Power dissipation: 2.8W
Case: PowerDI5060-8
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 41.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
DMT8008SPS-13 DIODES INCORPORATED DMT8008SPS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 66A; Idm: 330A; 2.8W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 66A
Pulsed drain current: 330A
Power dissipation: 2.8W
Case: PowerDI5060-8
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 34nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
BC857BT-7-F BC857BT-7-F DIODES INCORPORATED BC857T.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 150mW; SOT523
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT523
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
auf Bestellung 5765 Stücke:
Lieferzeit 14-21 Tag (e)
1400+0.051 EUR
2220+ 0.032 EUR
2520+ 0.028 EUR
2660+ 0.027 EUR
2820+ 0.025 EUR
Mindestbestellmenge: 1400
BC857BTQ-7 BC857BTQ-7 DIODES INCORPORATED BC857BTQ.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 100mA; 150mW; SOT523
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT523
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Produkt ist nicht verfügbar
BC857BW-7-F BC857BW-7-F DIODES INCORPORATED BC856AW-BC858CW.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 200mW; SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Current gain: 220...475
Mounting: SMD
Kind of package: reel
Frequency: 200MHz
auf Bestellung 5340 Stücke:
Lieferzeit 14-21 Tag (e)
1520+0.047 EUR
2540+ 0.028 EUR
2860+ 0.025 EUR
3140+ 0.023 EUR
3320+ 0.022 EUR
Mindestbestellmenge: 1520
ZLLS350TA ZLLS350TA DIODES INCORPORATED ZLLS350.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 0.38A; SOD523; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.38A
Semiconductor structure: single diode
Case: SOD523
Kind of package: reel; tape
Max. forward impulse current: 1.3A
Power dissipation: 0.357W
auf Bestellung 2344 Stücke:
Lieferzeit 14-21 Tag (e)
187+0.38 EUR
250+ 0.29 EUR
335+ 0.21 EUR
355+ 0.2 EUR
Mindestbestellmenge: 187
ZVP3306A ZVP3306A DIODES INCORPORATED ZVP3306A.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -0.16A; 0.625W; TO92
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -160mA
Power dissipation: 0.625W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 14Ω
Mounting: THT
Kind of package: bulk
Kind of channel: enhanced
auf Bestellung 1236 Stücke:
Lieferzeit 14-21 Tag (e)
59+1.23 EUR
121+ 0.59 EUR
137+ 0.52 EUR
156+ 0.46 EUR
165+ 0.43 EUR
Mindestbestellmenge: 59
ZVP3306FTA ZVP3306FTA DIODES INCORPORATED ZVP3306F.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -1.6A; 0.33W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -1.6A
Power dissipation: 0.33W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 14Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 1423 Stücke:
Lieferzeit 14-21 Tag (e)
132+0.54 EUR
304+ 0.24 EUR
322+ 0.22 EUR
Mindestbestellmenge: 132
74LVCE1G32SE-7 DIODES INCORPORATED 74LVCE1G32.pdf Category: Gates, inverters
Description: IC: digital; OR; Ch: 1; IN: 2; CMOS,TTL; SMD; SOT353; 1.4÷5.5VDC; LVCE
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: 1
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: SOT353
Supply voltage: 1.4...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of output: totem pole
Family: LVCE
Produkt ist nicht verfügbar
BZX84C5V6-7-F BZX84C5V6-7-F DIODES INCORPORATED BZX84Cxx_SER.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 5.6V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±7%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
auf Bestellung 2720 Stücke:
Lieferzeit 14-21 Tag (e)
1220+0.059 EUR
2440+ 0.029 EUR
2720+ 0.026 EUR
Mindestbestellmenge: 1220
BZX84C5V6S-7-F BZX84C5V6S-7-F DIODES INCORPORATED BZX84CxxS_SER.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 5.6V; SMD; reel,tape; SOT363
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±7%
Kind of package: reel; tape
Case: SOT363
Semiconductor structure: double independent
auf Bestellung 2925 Stücke:
Lieferzeit 14-21 Tag (e)
380+0.19 EUR
870+ 0.082 EUR
990+ 0.073 EUR
1065+ 0.067 EUR
1100+ 0.065 EUR
1125+ 0.064 EUR
Mindestbestellmenge: 380
BZX84C5V6T-7-F BZX84C5V6T-7-F DIODES INCORPORATED BZX84CxxT_SER.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.15W; 5.6V; SMD; reel,tape; SOT523; single diode
Type of diode: Zener
Power dissipation: 0.15W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±7%
Kind of package: reel; tape
Case: SOT523
Semiconductor structure: single diode
Produkt ist nicht verfügbar
BZX84C5V6TS-7-F BZX84C5V6TS-7-F DIODES INCORPORATED BZX84CxxTS_SER.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 5.6V; SMD; reel,tape; SOT363
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±7%
Kind of package: reel; tape
Case: SOT363
Semiconductor structure: triple independent
Produkt ist nicht verfügbar
BZX84C5V6W-7-F BZX84C5V6W-7-F DIODES INCORPORATED BZX84CxxW_SER.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 5.6V; SMD; reel,tape; SOT323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±7%
Kind of package: reel; tape
Case: SOT323
Semiconductor structure: single diode
auf Bestellung 2880 Stücke:
Lieferzeit 14-21 Tag (e)
1160+0.062 EUR
1340+ 0.054 EUR
1700+ 0.042 EUR
1800+ 0.04 EUR
Mindestbestellmenge: 1160
DMN6068LK3-13 DIODES INCORPORATED DMN6068LK3.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 6A; Idm: 22.2A; 4.12W; TO252
Kind of package: reel; tape
Mounting: SMD
Case: TO252
Drain-source voltage: 60V
Drain current: 6A
On-state resistance: 68mΩ
Type of transistor: N-MOSFET
Power dissipation: 4.12W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 22.2A
Produkt ist nicht verfügbar
DMN6068SEQ-13 DIODES INCORPORATED ds32033.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 4.5A; Idm: 20.8A; 3.7W; SOT223
Kind of package: reel; tape
Mounting: SMD
Case: SOT223
Drain-source voltage: 60V
Drain current: 4.5A
On-state resistance: 0.1Ω
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 3.7W
Polarisation: unipolar
Gate charge: 10.3nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 20.8A
Produkt ist nicht verfügbar
RS2K-13-F RS2K-13-F DIODES INCORPORATED ds15004.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 1.5A; 500ns; SMB; Ufmax: 1.3V; Ifsm: 50A
Leakage current: 0.2mA
Max. forward impulse current: 50A
Semiconductor structure: single diode
Load current: 1.5A
Max. forward voltage: 1.3V
Kind of package: reel; tape
Type of diode: rectifying
Max. off-state voltage: 0.8kV
Case: SMB
Reverse recovery time: 0.5µs
Mounting: SMD
auf Bestellung 2990 Stücke:
Lieferzeit 14-21 Tag (e)
335+0.21 EUR
355+ 0.2 EUR
405+ 0.18 EUR
460+ 0.16 EUR
490+ 0.15 EUR
Mindestbestellmenge: 335
ADTC114EUAQ-7 ADTC114EUAQ-7 DIODES INCORPORATED ADTC114EUAQ.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 330mW; SOT323; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT323
Current gain: 30
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 10kΩ
Application: automotive industry
Base-emitter resistor: 10kΩ
Produkt ist nicht verfügbar
DDTC114EUA-7-F DDTC114EUA-7-F DIODES INCORPORATED DDTCxxxUA.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT323; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
auf Bestellung 4866 Stücke:
Lieferzeit 14-21 Tag (e)
920+0.079 EUR
1760+ 0.041 EUR
1980+ 0.036 EUR
2280+ 0.032 EUR
2400+ 0.03 EUR
Mindestbestellmenge: 920
DMG2305UX-7 DMG2305UX-7 DIODES INCORPORATED DMG2305UX.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.3A; 1.4W; SOT23
Mounting: SMD
On-state resistance: 0.2Ω
Type of transistor: P-MOSFET
Power dissipation: 1.4W
Polarisation: unipolar
Kind of package: reel; tape
Drain current: -3.3A
Drain-source voltage: -20V
Case: SOT23
Kind of channel: enhanced
Gate-source voltage: ±8V
auf Bestellung 2620 Stücke:
Lieferzeit 14-21 Tag (e)
700+0.1 EUR
850+ 0.085 EUR
960+ 0.075 EUR
1090+ 0.066 EUR
1160+ 0.062 EUR
Mindestbestellmenge: 700
AP2138N-3.0TRG1 AP2138N-3.0TRG1 DIODES INCORPORATED AP2138-9.pdf Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.25A; SOT23; SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Manufacturer series: AP2138
Output voltage: 3V
Output current: 0.25A
Voltage drop: 0.6V
Type of integrated circuit: voltage regulator
Number of channels: 1
Input voltage: 2.5...6V
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Case: SOT23
Tolerance: ±2%
auf Bestellung 2485 Stücke:
Lieferzeit 14-21 Tag (e)
209+0.34 EUR
278+ 0.26 EUR
334+ 0.21 EUR
477+ 0.15 EUR
603+ 0.12 EUR
642+ 0.11 EUR
Mindestbestellmenge: 209
DMMT3904W-13-F DMMT3904W-13-F DIODES INCORPORATED DMMT3904W.pdf Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 40V; 0.2A; 200mW; SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.2W
Case: SOT363
Current gain: 30...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Produkt ist nicht verfügbar
DMMT3904W-7-F DMMT3904W-7-F DIODES INCORPORATED DMMT3904W.pdf Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 40V; 0.2A; 200mW; SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.2W
Case: SOT363
Current gain: 30...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
auf Bestellung 3365 Stücke:
Lieferzeit 14-21 Tag (e)
315+0.23 EUR
500+ 0.14 EUR
565+ 0.13 EUR
650+ 0.11 EUR
690+ 0.1 EUR
Mindestbestellmenge: 315
DMMT3904WQ-7-F DMMT3904WQ-7-F DIODES INCORPORATED DMMT3904WQ.pdf Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 40V; 0.2A; 200mW; SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.2W
Case: SOT363
Current gain: 30...300
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
DMG4800LSD-13 DMG4800LSD-13 DIODES INCORPORATED DMG4800LSD.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 8.4A; 1.5W; SO8
Polarisation: unipolar
On-state resistance: 22mΩ
Kind of package: reel; tape
Drain current: 8.4A
Drain-source voltage: 30V
Case: SO8
Kind of channel: enhanced
Gate-source voltage: ±25V
Type of transistor: N-MOSFET x2
Mounting: SMD
Power dissipation: 1.5W
auf Bestellung 3336 Stücke:
Lieferzeit 14-21 Tag (e)
167+0.43 EUR
237+ 0.3 EUR
264+ 0.27 EUR
280+ 0.26 EUR
500+ 0.25 EUR
Mindestbestellmenge: 167
DMG4800LSDQ-13 DMG4800LSDQ-13 DIODES INCORPORATED DMG4800LSD.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 8.4A; 1.5W; SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 8.4A
Power dissipation: 1.5W
Case: SO8
Gate-source voltage: ±25V
On-state resistance: 22mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Produkt ist nicht verfügbar
DMG4800LFG-7 DIODES INCORPORATED ds31785.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.82A; Idm: 40A; 940mW
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4.82A
Pulsed drain current: 40A
Power dissipation: 0.94W
Case: U-DFN3030-8
Gate-source voltage: ±25V
On-state resistance: 24mΩ
Mounting: SMD
Gate charge: 9.47nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
DMG4800LK3-13 DMG4800LK3-13 DIODES INCORPORATED DMG4800LK3.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.5A; 1.71W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 6.5A
Power dissipation: 1.71W
Case: TO252
Gate-source voltage: ±25V
On-state resistance: 24mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
DMN4800LSS-13 DMN4800LSS-13 DIODES INCORPORATED ds31736.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 9A; Idm: 50A; 1W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 9A
Pulsed drain current: 50A
Power dissipation: 1W
Case: SO8
Gate-source voltage: ±25V
On-state resistance: 20mΩ
Mounting: SMD
Gate charge: 8.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
DMN4800LSSL-13 DMN4800LSSL-13 DIODES INCORPORATED DMN4800LSSL.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.3A; Idm: 50A; 1.46W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5.3A
Pulsed drain current: 50A
Power dissipation: 1.46W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: SMD
Gate charge: 8.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
DMN4800LSSQ-13 DMN4800LSSQ-13 DIODES INCORPORATED DMN4800LSSQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 9A; Idm: 50A; 1W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 9A
Pulsed drain current: 50A
Power dissipation: 1W
Case: SO8
Gate-source voltage: ±25V
On-state resistance: 20mΩ
Mounting: SMD
Gate charge: 8.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
74LVC2G14DW-7 74LVC2G14DW-7 DIODES INCORPORATED 74LVC2G14.pdf Category: Gates, inverters
Description: IC: digital; inverter; Ch: 2; CMOS; SMD; SOT363; 1.65÷5.5VDC; LVC
Operating temperature: -40...150°C
Mounting: SMD
Supply voltage: 1.65...5.5V DC
Kind of output: push-pull
Family: LVC
Technology: CMOS
Kind of integrated circuit: inverter
Case: SOT363
Type of integrated circuit: digital
Number of channels: 2
Kind of package: reel; tape
Produkt ist nicht verfügbar
74LVC2G14FW4-7 DIODES INCORPORATED 74LVC2G14.pdf Category: Gates, inverters
Description: IC: digital; inverter; Ch: 2; CMOS; SMD; X2-DFN1010-6; 1.65÷5.5VDC
Operating temperature: -40...150°C
Mounting: SMD
Supply voltage: 1.65...5.5V DC
Kind of output: push-pull
Family: LVC
Technology: CMOS
Kind of integrated circuit: inverter
Case: X2-DFN1010-6
Type of integrated circuit: digital
Number of channels: 2
Kind of package: reel; tape
Produkt ist nicht verfügbar
74LVC2G14FX4-7 DIODES INCORPORATED 74LVC2G14.pdf Category: Gates, inverters
Description: IC: digital; inverter; Ch: 2; CMOS; SMD; X2-DFN1409-6; 1.65÷5.5VDC
Operating temperature: -40...150°C
Mounting: SMD
Supply voltage: 1.65...5.5V DC
Kind of output: push-pull
Family: LVC
Technology: CMOS
Kind of integrated circuit: inverter
Case: X2-DFN1409-6
Type of integrated circuit: digital
Number of channels: 2
Kind of package: reel; tape
Produkt ist nicht verfügbar
74LVC2G14FZ4-7 DIODES INCORPORATED 74LVC2G14.pdf Category: Gates, inverters
Description: IC: digital; inverter; Ch: 2; CMOS; SMD; X2-DFN1410-6; 1.65÷5.5VDC
Operating temperature: -40...150°C
Mounting: SMD
Supply voltage: 1.65...5.5V DC
Kind of output: push-pull
Family: LVC
Technology: CMOS
Kind of integrated circuit: inverter
Case: X2-DFN1410-6
Type of integrated circuit: digital
Number of channels: 2
Kind of package: reel; tape
Produkt ist nicht verfügbar
74LVC2G14W6-7 74LVC2G14W6-7 DIODES INCORPORATED 74LVC2G14.pdf Category: Gates, inverters
Description: IC: digital; inverter; Ch: 2; CMOS; SMD; SOT26; 1.65÷5.5VDC; LVC
Operating temperature: -40...150°C
Mounting: SMD
Supply voltage: 1.65...5.5V DC
Kind of output: push-pull
Family: LVC
Technology: CMOS
Kind of integrated circuit: inverter
Case: SOT26
Type of integrated circuit: digital
Number of channels: 2
Kind of package: reel; tape
Produkt ist nicht verfügbar
MMSZ5228BS-7-F MMSZ5228BS-7-F DIODES INCORPORATED mmsz52xxbs_ser.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 3.9V; SMD; reel,tape; SOD323; single diode
Power dissipation: 0.2W
Kind of package: reel; tape
Type of diode: Zener
Mounting: SMD
Case: SOD323
Tolerance: ±5%
Semiconductor structure: single diode
Zener voltage: 3.9V
auf Bestellung 6408 Stücke:
Lieferzeit 14-21 Tag (e)
1180+0.061 EUR
1740+ 0.041 EUR
1980+ 0.036 EUR
2280+ 0.031 EUR
2420+ 0.03 EUR
Mindestbestellmenge: 1180
GBU10005 GBU10005 DIODES INCORPORATED GBU10_ser.pdf Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 50V; If: 10A; Ifsm: 220A
Max. off-state voltage: 50V
Load current: 10A
Case: GBU
Version: flat
Max. forward impulse current: 220A
Electrical mounting: THT
Features of semiconductor devices: glass passivated
Kind of package: tube
Type of bridge rectifier: single-phase
Leads: flat pin
Produkt ist nicht verfügbar
DMP4015SK3-13 DIODES INCORPORATED DMP4015SK3.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -27A; Idm: -100A; 3.5W; TO252
Case: TO252
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: -40V
Drain current: -27A
On-state resistance: 11mΩ
Type of transistor: P-MOSFET
Power dissipation: 3.5W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±25V
Pulsed drain current: -100A
Produkt ist nicht verfügbar
DMP4015SK3Q-13 DMP4015SK3Q-13 DIODES INCORPORATED DMP4015SK3.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -30A; 3.5W; TO252
Case: TO252
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Drain-source voltage: -40V
Drain current: -30A
On-state resistance: 15mΩ
Type of transistor: P-MOSFET
Power dissipation: 3.5W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±25V
Produkt ist nicht verfügbar
DMP4015SPS-13 DIODES INCORPORATED DMP4015SPS.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -8.7A; Idm: -100A; 0.8W
Case: PowerDI®5060-8
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: -40V
Drain current: -8.7A
On-state resistance: 15mΩ
Type of transistor: P-MOSFET
Power dissipation: 0.8W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±25V
Pulsed drain current: -100A
Produkt ist nicht verfügbar
DMP4015SPSQ-13 DIODES INCORPORATED DMP4015SPSQ.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -8.7A; Idm: -100A; 0.8W
Case: PowerDI®5060-8
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Drain-source voltage: -40V
Drain current: -8.7A
On-state resistance: 15mΩ
Type of transistor: P-MOSFET
Power dissipation: 0.8W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±25V
Pulsed drain current: -100A
Produkt ist nicht verfügbar
DMP4015SSSQ-13 DMP4015SSSQ-13 DIODES INCORPORATED DMP4015SSSQ.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -8.8A; 1.45W; SO8
Mounting: SMD
Application: automotive industry
Kind of package: reel; tape
On-state resistance: 15mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.45W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±25V
Case: SO8
Drain-source voltage: -40V
Drain current: -8.8A
auf Bestellung 2668 Stücke:
Lieferzeit 14-21 Tag (e)
59+1.22 EUR
67+ 1.07 EUR
85+ 0.84 EUR
90+ 0.8 EUR
Mindestbestellmenge: 59
74LVC1G17FW4-7 DIODES INCORPORATED 74LVC1G17.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; buffer; Ch: 1; CMOS; SMD; X2-DFN1010-6; 1.65÷5.5VDC
Type of integrated circuit: digital
Kind of integrated circuit: buffer
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: X2-DFN1010-6
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of output: push-pull
Kind of package: reel; tape
Family: LVC
Produkt ist nicht verfügbar
74LVC1G17FZ4-7 DIODES INCORPORATED 74LVC1G17.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; buffer; Ch: 1; CMOS; SMD; X2-DFN1410-6; 1.65÷5.5VDC
Type of integrated circuit: digital
Kind of integrated circuit: buffer
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: X2-DFN1410-6
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of output: push-pull
Kind of package: reel; tape
Family: LVC
Produkt ist nicht verfügbar
74LVC1G17SE-7 74LVC1G17SE-7 DIODES INCORPORATED 74LVC1G17.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; SMD; SOT353; LVC; 200uA
Mounting: SMD
Kind of package: reel; tape
Case: SOT353
Manufacturer series: LVC
Type of integrated circuit: digital
Number of channels: 1
Quiescent current: 200µA
Kind of output: push-pull
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...125°C
Kind of input: with Schmitt trigger
Kind of integrated circuit: buffer; non-inverting
auf Bestellung 314 Stücke:
Lieferzeit 14-21 Tag (e)
314+0.23 EUR
Mindestbestellmenge: 314
74LVC1G17W5-7 74LVC1G17W5-7 DIODES INCORPORATED 74LVC1G17.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; SMD; SOT25; LVC; -40÷125°C
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 1
Mounting: SMD
Case: SOT25
Manufacturer series: LVC
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...125°C
Kind of output: push-pull
Kind of package: reel; tape
Quiescent current: 200µA
Kind of input: with Schmitt trigger
auf Bestellung 2576 Stücke:
Lieferzeit 14-21 Tag (e)
736+0.097 EUR
1047+ 0.068 EUR
1161+ 0.062 EUR
1389+ 0.051 EUR
1467+ 0.049 EUR
Mindestbestellmenge: 736
74LVC1G17Z-7 DIODES INCORPORATED 74LVC1G17.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; buffer; Ch: 1; CMOS; SMD; SOT553; 1.65÷5.5VDC; -40÷150°C
Type of integrated circuit: digital
Kind of integrated circuit: buffer
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: SOT553
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of output: push-pull
Kind of package: reel; tape
Family: LVC
Produkt ist nicht verfügbar
74LVC14AS14-13 DIODES INCORPORATED 74LVC14A.pdf Category: Gates, inverters
Description: IC: digital; inverter; Ch: 6; CMOS; SMD; SO14; 1.65÷5.5VDC; -40÷150°C
Type of integrated circuit: digital
Kind of integrated circuit: inverter
Number of channels: 6
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Kind of output: push-pull
Family: LVC
Produkt ist nicht verfügbar
74LVC14AT14-13 DIODES INCORPORATED 74LVC14A.pdf Category: Gates, inverters
Description: IC: digital; inverter; Ch: 6; CMOS; SMD; TSSOP14; 1.65÷5.5VDC; LVC
Type of integrated circuit: digital
Kind of integrated circuit: inverter
Number of channels: 6
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Kind of output: push-pull
Family: LVC
Produkt ist nicht verfügbar
SBR40U60CT SBR40U60CT DIODES INCORPORATED SBR40U60CT.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SBR®; THT; 60V; 20Ax2; TO220AB; tube
Type of diode: Schottky rectifying
Technology: SBR®
Mounting: THT
Max. off-state voltage: 60V
Load current: 20A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Kind of package: tube
Max. forward impulse current: 280A
Max. forward voltage: 0.6V
Produkt ist nicht verfügbar
BCX55TA BCX54x-DTE.pdf
BCX55TA
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 1W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 1W
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
Produkt ist nicht verfügbar
74HCT138S16-13 74HCT138.pdf
Hersteller: DIODES INCORPORATED
Category: Decoders, multiplexers, switches
Description: IC: digital; 3 to 8 line,line decoder,demultiplexer; Ch: 8; IN: 6
Type of integrated circuit: digital
Kind of integrated circuit: 3 to 8 line; demultiplexer; line decoder
Number of channels: 8
Number of inputs: 6
Technology: CMOS; TTL
Mounting: SMD
Case: SO16
Supply voltage: 4.5...5.5V DC
Family: HCT
Kind of package: reel; tape
Operating temperature: -40...150°C
Kind of output: push-pull
Kind of input: with Schmitt trigger
Produkt ist nicht verfügbar
74HCT138T16-13 74HCT138.pdf
Hersteller: DIODES INCORPORATED
Category: Decoders, multiplexers, switches
Description: IC: digital; 3 to 8 line,line decoder,demultiplexer; Ch: 8; IN: 6
Type of integrated circuit: digital
Kind of integrated circuit: 3 to 8 line; demultiplexer; line decoder
Number of channels: 8
Number of inputs: 6
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP16
Supply voltage: 4.5...5.5V DC
Family: HCT
Kind of package: reel; tape
Operating temperature: -40...150°C
Kind of output: push-pull
Kind of input: with Schmitt trigger
Produkt ist nicht verfügbar
BAT54Q-7-F
BAT54Q-7-F
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 0.2A; 5ns; SOT23; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Reverse recovery time: 5ns
Semiconductor structure: single diode
Capacitance: 10pF
Max. forward voltage: 0.8V
Case: SOT23
Kind of package: reel; tape
Leakage current: 2µA
Max. forward impulse current: 0.6A
Power dissipation: 0.2W
Application: automotive industry
Produkt ist nicht verfügbar
BAT54T-7-F BAT54T_AT_CT_ST.pdf
BAT54T-7-F
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 0.2A; 5ns; SOT523; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Reverse recovery time: 5ns
Semiconductor structure: single diode
Capacitance: 10pF
Max. forward voltage: 1V
Case: SOT523
Kind of package: reel; tape
Leakage current: 2µA
Max. forward impulse current: 0.6A
Power dissipation: 0.15W
Produkt ist nicht verfügbar
BAT54DW-7-F BAT54DW.pdf
BAT54DW-7-F
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 0.2A; 5ns; SOT363; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Reverse recovery time: 5ns
Semiconductor structure: double independent
Capacitance: 10pF
Max. forward voltage: 1V
Case: SOT363
Kind of package: reel; tape
Leakage current: 2µA
Max. forward impulse current: 0.6A
Power dissipation: 0.2W
Produkt ist nicht verfügbar
KBJ410G KBJ4005G_ser.pdf
KBJ410G
Hersteller: DIODES INCORPORATED
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 4A; Ifsm: 120A; flat
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 4A
Max. forward impulse current: 120A
Version: flat
Case: KBJ
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Features of semiconductor devices: glass passivated
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
1+71.5 EUR
KBJ401G KBJ4005G_ser.pdf
KBJ401G
Hersteller: DIODES INCORPORATED
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 100V; If: 4A; Ifsm: 120A
Electrical mounting: THT
Max. off-state voltage: 100V
Load current: 4A
Max. forward impulse current: 120A
Kind of package: tube
Version: flat
Features of semiconductor devices: glass passivated
Type of bridge rectifier: single-phase
Case: KBJ
Leads: flat pin
Produkt ist nicht verfügbar
DMT8008LFG-7 DMT8008LFG.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 13A; Idm: 192A; 2.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 13A
Pulsed drain current: 192A
Power dissipation: 2.5W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 10.4mΩ
Mounting: SMD
Gate charge: 37.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
DMT8008LPS-13 DMT8008LPS.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 66A; Idm: 330A; 2.8W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 66A
Pulsed drain current: 330A
Power dissipation: 2.8W
Case: PowerDI5060-8
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 41.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
DMT8008SPS-13 DMT8008SPS.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 66A; Idm: 330A; 2.8W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 66A
Pulsed drain current: 330A
Power dissipation: 2.8W
Case: PowerDI5060-8
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 34nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
BC857BT-7-F BC857T.pdf
BC857BT-7-F
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 150mW; SOT523
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT523
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
auf Bestellung 5765 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
1400+0.051 EUR
2220+ 0.032 EUR
2520+ 0.028 EUR
2660+ 0.027 EUR
2820+ 0.025 EUR
Mindestbestellmenge: 1400
BC857BTQ-7 BC857BTQ.pdf
BC857BTQ-7
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 100mA; 150mW; SOT523
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT523
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Produkt ist nicht verfügbar
BC857BW-7-F BC856AW-BC858CW.pdf
BC857BW-7-F
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 200mW; SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Current gain: 220...475
Mounting: SMD
Kind of package: reel
Frequency: 200MHz
auf Bestellung 5340 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
1520+0.047 EUR
2540+ 0.028 EUR
2860+ 0.025 EUR
3140+ 0.023 EUR
3320+ 0.022 EUR
Mindestbestellmenge: 1520
ZLLS350TA ZLLS350.pdf
ZLLS350TA
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 0.38A; SOD523; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.38A
Semiconductor structure: single diode
Case: SOD523
Kind of package: reel; tape
Max. forward impulse current: 1.3A
Power dissipation: 0.357W
auf Bestellung 2344 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
187+0.38 EUR
250+ 0.29 EUR
335+ 0.21 EUR
355+ 0.2 EUR
Mindestbestellmenge: 187
ZVP3306A ZVP3306A.pdf
ZVP3306A
Hersteller: DIODES INCORPORATED
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -0.16A; 0.625W; TO92
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -160mA
Power dissipation: 0.625W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 14Ω
Mounting: THT
Kind of package: bulk
Kind of channel: enhanced
auf Bestellung 1236 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
59+1.23 EUR
121+ 0.59 EUR
137+ 0.52 EUR
156+ 0.46 EUR
165+ 0.43 EUR
Mindestbestellmenge: 59
ZVP3306FTA ZVP3306F.pdf
ZVP3306FTA
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -1.6A; 0.33W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -1.6A
Power dissipation: 0.33W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 14Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 1423 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
132+0.54 EUR
304+ 0.24 EUR
322+ 0.22 EUR
Mindestbestellmenge: 132
74LVCE1G32SE-7 74LVCE1G32.pdf
Hersteller: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; OR; Ch: 1; IN: 2; CMOS,TTL; SMD; SOT353; 1.4÷5.5VDC; LVCE
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: 1
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: SOT353
Supply voltage: 1.4...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of output: totem pole
Family: LVCE
Produkt ist nicht verfügbar
BZX84C5V6-7-F BZX84Cxx_SER.pdf
BZX84C5V6-7-F
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 5.6V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±7%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
auf Bestellung 2720 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
1220+0.059 EUR
2440+ 0.029 EUR
2720+ 0.026 EUR
Mindestbestellmenge: 1220
BZX84C5V6S-7-F BZX84CxxS_SER.pdf
BZX84C5V6S-7-F
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 5.6V; SMD; reel,tape; SOT363
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±7%
Kind of package: reel; tape
Case: SOT363
Semiconductor structure: double independent
auf Bestellung 2925 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
380+0.19 EUR
870+ 0.082 EUR
990+ 0.073 EUR
1065+ 0.067 EUR
1100+ 0.065 EUR
1125+ 0.064 EUR
Mindestbestellmenge: 380
BZX84C5V6T-7-F BZX84CxxT_SER.pdf
BZX84C5V6T-7-F
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.15W; 5.6V; SMD; reel,tape; SOT523; single diode
Type of diode: Zener
Power dissipation: 0.15W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±7%
Kind of package: reel; tape
Case: SOT523
Semiconductor structure: single diode
Produkt ist nicht verfügbar
BZX84C5V6TS-7-F BZX84CxxTS_SER.pdf
BZX84C5V6TS-7-F
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 5.6V; SMD; reel,tape; SOT363
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±7%
Kind of package: reel; tape
Case: SOT363
Semiconductor structure: triple independent
Produkt ist nicht verfügbar
BZX84C5V6W-7-F BZX84CxxW_SER.pdf
BZX84C5V6W-7-F
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 5.6V; SMD; reel,tape; SOT323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±7%
Kind of package: reel; tape
Case: SOT323
Semiconductor structure: single diode
auf Bestellung 2880 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
1160+0.062 EUR
1340+ 0.054 EUR
1700+ 0.042 EUR
1800+ 0.04 EUR
Mindestbestellmenge: 1160
DMN6068LK3-13 DMN6068LK3.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 6A; Idm: 22.2A; 4.12W; TO252
Kind of package: reel; tape
Mounting: SMD
Case: TO252
Drain-source voltage: 60V
Drain current: 6A
On-state resistance: 68mΩ
Type of transistor: N-MOSFET
Power dissipation: 4.12W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 22.2A
Produkt ist nicht verfügbar
DMN6068SEQ-13 ds32033.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 4.5A; Idm: 20.8A; 3.7W; SOT223
Kind of package: reel; tape
Mounting: SMD
Case: SOT223
Drain-source voltage: 60V
Drain current: 4.5A
On-state resistance: 0.1Ω
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 3.7W
Polarisation: unipolar
Gate charge: 10.3nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 20.8A
Produkt ist nicht verfügbar
RS2K-13-F ds15004.pdf
RS2K-13-F
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 1.5A; 500ns; SMB; Ufmax: 1.3V; Ifsm: 50A
Leakage current: 0.2mA
Max. forward impulse current: 50A
Semiconductor structure: single diode
Load current: 1.5A
Max. forward voltage: 1.3V
Kind of package: reel; tape
Type of diode: rectifying
Max. off-state voltage: 0.8kV
Case: SMB
Reverse recovery time: 0.5µs
Mounting: SMD
auf Bestellung 2990 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
335+0.21 EUR
355+ 0.2 EUR
405+ 0.18 EUR
460+ 0.16 EUR
490+ 0.15 EUR
Mindestbestellmenge: 335
ADTC114EUAQ-7 ADTC114EUAQ.pdf
ADTC114EUAQ-7
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 330mW; SOT323; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT323
Current gain: 30
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 10kΩ
Application: automotive industry
Base-emitter resistor: 10kΩ
Produkt ist nicht verfügbar
DDTC114EUA-7-F DDTCxxxUA.pdf
DDTC114EUA-7-F
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT323; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
auf Bestellung 4866 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
920+0.079 EUR
1760+ 0.041 EUR
1980+ 0.036 EUR
2280+ 0.032 EUR
2400+ 0.03 EUR
Mindestbestellmenge: 920
DMG2305UX-7 DMG2305UX.pdf
DMG2305UX-7
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.3A; 1.4W; SOT23
Mounting: SMD
On-state resistance: 0.2Ω
Type of transistor: P-MOSFET
Power dissipation: 1.4W
Polarisation: unipolar
Kind of package: reel; tape
Drain current: -3.3A
Drain-source voltage: -20V
Case: SOT23
Kind of channel: enhanced
Gate-source voltage: ±8V
auf Bestellung 2620 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
700+0.1 EUR
850+ 0.085 EUR
960+ 0.075 EUR
1090+ 0.066 EUR
1160+ 0.062 EUR
Mindestbestellmenge: 700
AP2138N-3.0TRG1 AP2138-9.pdf
AP2138N-3.0TRG1
Hersteller: DIODES INCORPORATED
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.25A; SOT23; SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Manufacturer series: AP2138
Output voltage: 3V
Output current: 0.25A
Voltage drop: 0.6V
Type of integrated circuit: voltage regulator
Number of channels: 1
Input voltage: 2.5...6V
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Case: SOT23
Tolerance: ±2%
auf Bestellung 2485 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
209+0.34 EUR
278+ 0.26 EUR
334+ 0.21 EUR
477+ 0.15 EUR
603+ 0.12 EUR
642+ 0.11 EUR
Mindestbestellmenge: 209
DMMT3904W-13-F DMMT3904W.pdf
DMMT3904W-13-F
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 40V; 0.2A; 200mW; SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.2W
Case: SOT363
Current gain: 30...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Produkt ist nicht verfügbar
DMMT3904W-7-F DMMT3904W.pdf
DMMT3904W-7-F
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 40V; 0.2A; 200mW; SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.2W
Case: SOT363
Current gain: 30...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
auf Bestellung 3365 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
315+0.23 EUR
500+ 0.14 EUR
565+ 0.13 EUR
650+ 0.11 EUR
690+ 0.1 EUR
Mindestbestellmenge: 315
DMMT3904WQ-7-F DMMT3904WQ.pdf
DMMT3904WQ-7-F
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 40V; 0.2A; 200mW; SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.2W
Case: SOT363
Current gain: 30...300
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
DMG4800LSD-13 DMG4800LSD.pdf
DMG4800LSD-13
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 8.4A; 1.5W; SO8
Polarisation: unipolar
On-state resistance: 22mΩ
Kind of package: reel; tape
Drain current: 8.4A
Drain-source voltage: 30V
Case: SO8
Kind of channel: enhanced
Gate-source voltage: ±25V
Type of transistor: N-MOSFET x2
Mounting: SMD
Power dissipation: 1.5W
auf Bestellung 3336 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
167+0.43 EUR
237+ 0.3 EUR
264+ 0.27 EUR
280+ 0.26 EUR
500+ 0.25 EUR
Mindestbestellmenge: 167
DMG4800LSDQ-13 DMG4800LSD.pdf
DMG4800LSDQ-13
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 8.4A; 1.5W; SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 8.4A
Power dissipation: 1.5W
Case: SO8
Gate-source voltage: ±25V
On-state resistance: 22mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Produkt ist nicht verfügbar
DMG4800LFG-7 ds31785.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.82A; Idm: 40A; 940mW
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4.82A
Pulsed drain current: 40A
Power dissipation: 0.94W
Case: U-DFN3030-8
Gate-source voltage: ±25V
On-state resistance: 24mΩ
Mounting: SMD
Gate charge: 9.47nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
DMG4800LK3-13 DMG4800LK3.pdf
DMG4800LK3-13
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.5A; 1.71W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 6.5A
Power dissipation: 1.71W
Case: TO252
Gate-source voltage: ±25V
On-state resistance: 24mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
DMN4800LSS-13 ds31736.pdf
DMN4800LSS-13
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 9A; Idm: 50A; 1W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 9A
Pulsed drain current: 50A
Power dissipation: 1W
Case: SO8
Gate-source voltage: ±25V
On-state resistance: 20mΩ
Mounting: SMD
Gate charge: 8.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
DMN4800LSSL-13 DMN4800LSSL.pdf
DMN4800LSSL-13
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.3A; Idm: 50A; 1.46W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5.3A
Pulsed drain current: 50A
Power dissipation: 1.46W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: SMD
Gate charge: 8.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
DMN4800LSSQ-13 DMN4800LSSQ.pdf
DMN4800LSSQ-13
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 9A; Idm: 50A; 1W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 9A
Pulsed drain current: 50A
Power dissipation: 1W
Case: SO8
Gate-source voltage: ±25V
On-state resistance: 20mΩ
Mounting: SMD
Gate charge: 8.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
74LVC2G14DW-7 74LVC2G14.pdf
74LVC2G14DW-7
Hersteller: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; inverter; Ch: 2; CMOS; SMD; SOT363; 1.65÷5.5VDC; LVC
Operating temperature: -40...150°C
Mounting: SMD
Supply voltage: 1.65...5.5V DC
Kind of output: push-pull
Family: LVC
Technology: CMOS
Kind of integrated circuit: inverter
Case: SOT363
Type of integrated circuit: digital
Number of channels: 2
Kind of package: reel; tape
Produkt ist nicht verfügbar
74LVC2G14FW4-7 74LVC2G14.pdf
Hersteller: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; inverter; Ch: 2; CMOS; SMD; X2-DFN1010-6; 1.65÷5.5VDC
Operating temperature: -40...150°C
Mounting: SMD
Supply voltage: 1.65...5.5V DC
Kind of output: push-pull
Family: LVC
Technology: CMOS
Kind of integrated circuit: inverter
Case: X2-DFN1010-6
Type of integrated circuit: digital
Number of channels: 2
Kind of package: reel; tape
Produkt ist nicht verfügbar
74LVC2G14FX4-7 74LVC2G14.pdf
Hersteller: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; inverter; Ch: 2; CMOS; SMD; X2-DFN1409-6; 1.65÷5.5VDC
Operating temperature: -40...150°C
Mounting: SMD
Supply voltage: 1.65...5.5V DC
Kind of output: push-pull
Family: LVC
Technology: CMOS
Kind of integrated circuit: inverter
Case: X2-DFN1409-6
Type of integrated circuit: digital
Number of channels: 2
Kind of package: reel; tape
Produkt ist nicht verfügbar
74LVC2G14FZ4-7 74LVC2G14.pdf
Hersteller: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; inverter; Ch: 2; CMOS; SMD; X2-DFN1410-6; 1.65÷5.5VDC
Operating temperature: -40...150°C
Mounting: SMD
Supply voltage: 1.65...5.5V DC
Kind of output: push-pull
Family: LVC
Technology: CMOS
Kind of integrated circuit: inverter
Case: X2-DFN1410-6
Type of integrated circuit: digital
Number of channels: 2
Kind of package: reel; tape
Produkt ist nicht verfügbar
74LVC2G14W6-7 74LVC2G14.pdf
74LVC2G14W6-7
Hersteller: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; inverter; Ch: 2; CMOS; SMD; SOT26; 1.65÷5.5VDC; LVC
Operating temperature: -40...150°C
Mounting: SMD
Supply voltage: 1.65...5.5V DC
Kind of output: push-pull
Family: LVC
Technology: CMOS
Kind of integrated circuit: inverter
Case: SOT26
Type of integrated circuit: digital
Number of channels: 2
Kind of package: reel; tape
Produkt ist nicht verfügbar
MMSZ5228BS-7-F mmsz52xxbs_ser.pdf
MMSZ5228BS-7-F
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 3.9V; SMD; reel,tape; SOD323; single diode
Power dissipation: 0.2W
Kind of package: reel; tape
Type of diode: Zener
Mounting: SMD
Case: SOD323
Tolerance: ±5%
Semiconductor structure: single diode
Zener voltage: 3.9V
auf Bestellung 6408 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
1180+0.061 EUR
1740+ 0.041 EUR
1980+ 0.036 EUR
2280+ 0.031 EUR
2420+ 0.03 EUR
Mindestbestellmenge: 1180
GBU10005 GBU10_ser.pdf
GBU10005
Hersteller: DIODES INCORPORATED
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 50V; If: 10A; Ifsm: 220A
Max. off-state voltage: 50V
Load current: 10A
Case: GBU
Version: flat
Max. forward impulse current: 220A
Electrical mounting: THT
Features of semiconductor devices: glass passivated
Kind of package: tube
Type of bridge rectifier: single-phase
Leads: flat pin
Produkt ist nicht verfügbar
DMP4015SK3-13 DMP4015SK3.pdf
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -27A; Idm: -100A; 3.5W; TO252
Case: TO252
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: -40V
Drain current: -27A
On-state resistance: 11mΩ
Type of transistor: P-MOSFET
Power dissipation: 3.5W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±25V
Pulsed drain current: -100A
Produkt ist nicht verfügbar
DMP4015SK3Q-13 DMP4015SK3.pdf
DMP4015SK3Q-13
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -30A; 3.5W; TO252
Case: TO252
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Drain-source voltage: -40V
Drain current: -30A
On-state resistance: 15mΩ
Type of transistor: P-MOSFET
Power dissipation: 3.5W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±25V
Produkt ist nicht verfügbar
DMP4015SPS-13 DMP4015SPS.pdf
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -8.7A; Idm: -100A; 0.8W
Case: PowerDI®5060-8
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: -40V
Drain current: -8.7A
On-state resistance: 15mΩ
Type of transistor: P-MOSFET
Power dissipation: 0.8W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±25V
Pulsed drain current: -100A
Produkt ist nicht verfügbar
DMP4015SPSQ-13 DMP4015SPSQ.pdf
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -8.7A; Idm: -100A; 0.8W
Case: PowerDI®5060-8
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Drain-source voltage: -40V
Drain current: -8.7A
On-state resistance: 15mΩ
Type of transistor: P-MOSFET
Power dissipation: 0.8W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±25V
Pulsed drain current: -100A
Produkt ist nicht verfügbar
DMP4015SSSQ-13 DMP4015SSSQ.pdf
DMP4015SSSQ-13
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -8.8A; 1.45W; SO8
Mounting: SMD
Application: automotive industry
Kind of package: reel; tape
On-state resistance: 15mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.45W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±25V
Case: SO8
Drain-source voltage: -40V
Drain current: -8.8A
auf Bestellung 2668 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
59+1.22 EUR
67+ 1.07 EUR
85+ 0.84 EUR
90+ 0.8 EUR
Mindestbestellmenge: 59
74LVC1G17FW4-7 74LVC1G17.pdf
Hersteller: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer; Ch: 1; CMOS; SMD; X2-DFN1010-6; 1.65÷5.5VDC
Type of integrated circuit: digital
Kind of integrated circuit: buffer
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: X2-DFN1010-6
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of output: push-pull
Kind of package: reel; tape
Family: LVC
Produkt ist nicht verfügbar
74LVC1G17FZ4-7 74LVC1G17.pdf
Hersteller: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer; Ch: 1; CMOS; SMD; X2-DFN1410-6; 1.65÷5.5VDC
Type of integrated circuit: digital
Kind of integrated circuit: buffer
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: X2-DFN1410-6
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of output: push-pull
Kind of package: reel; tape
Family: LVC
Produkt ist nicht verfügbar
74LVC1G17SE-7 74LVC1G17.pdf
74LVC1G17SE-7
Hersteller: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; SMD; SOT353; LVC; 200uA
Mounting: SMD
Kind of package: reel; tape
Case: SOT353
Manufacturer series: LVC
Type of integrated circuit: digital
Number of channels: 1
Quiescent current: 200µA
Kind of output: push-pull
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...125°C
Kind of input: with Schmitt trigger
Kind of integrated circuit: buffer; non-inverting
auf Bestellung 314 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
314+0.23 EUR
Mindestbestellmenge: 314
74LVC1G17W5-7 74LVC1G17.pdf
74LVC1G17W5-7
Hersteller: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; SMD; SOT25; LVC; -40÷125°C
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 1
Mounting: SMD
Case: SOT25
Manufacturer series: LVC
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...125°C
Kind of output: push-pull
Kind of package: reel; tape
Quiescent current: 200µA
Kind of input: with Schmitt trigger
auf Bestellung 2576 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
736+0.097 EUR
1047+ 0.068 EUR
1161+ 0.062 EUR
1389+ 0.051 EUR
1467+ 0.049 EUR
Mindestbestellmenge: 736
74LVC1G17Z-7 74LVC1G17.pdf
Hersteller: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer; Ch: 1; CMOS; SMD; SOT553; 1.65÷5.5VDC; -40÷150°C
Type of integrated circuit: digital
Kind of integrated circuit: buffer
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: SOT553
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of output: push-pull
Kind of package: reel; tape
Family: LVC
Produkt ist nicht verfügbar
74LVC14AS14-13 74LVC14A.pdf
Hersteller: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; inverter; Ch: 6; CMOS; SMD; SO14; 1.65÷5.5VDC; -40÷150°C
Type of integrated circuit: digital
Kind of integrated circuit: inverter
Number of channels: 6
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Kind of output: push-pull
Family: LVC
Produkt ist nicht verfügbar
74LVC14AT14-13 74LVC14A.pdf
Hersteller: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; inverter; Ch: 6; CMOS; SMD; TSSOP14; 1.65÷5.5VDC; LVC
Type of integrated circuit: digital
Kind of integrated circuit: inverter
Number of channels: 6
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Kind of output: push-pull
Family: LVC
Produkt ist nicht verfügbar
SBR40U60CT SBR40U60CT.pdf
SBR40U60CT
Hersteller: DIODES INCORPORATED
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SBR®; THT; 60V; 20Ax2; TO220AB; tube
Type of diode: Schottky rectifying
Technology: SBR®
Mounting: THT
Max. off-state voltage: 60V
Load current: 20A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Kind of package: tube
Max. forward impulse current: 280A
Max. forward voltage: 0.6V
Produkt ist nicht verfügbar
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