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S1BB-13-F S1BB-13-F DIODES INCORPORATED s1ab-s1mb.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 1A; 1.8us; SMB; Ufmax: 1.1V; Ifsm: 30A
Mounting: SMD
Features of semiconductor devices: glass passivated
Max. off-state voltage: 100V
Load current: 1A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SMB
Capacitance: 10pF
Type of diode: rectifying
Reverse recovery time: 1.8µs
Max. forward impulse current: 30A
Max. forward voltage: 1.1V
auf Bestellung 425 Stücke:
Lieferzeit 14-21 Tag (e)
350+0.2 EUR
425+ 0.17 EUR
Mindestbestellmenge: 350
S3BB-13-F DIODES INCORPORATED ds16005.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 3A; SMB; Ufmax: 1.15V; Ifsm: 100A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 3A
Semiconductor structure: single diode
Capacitance: 40pF
Case: SMB
Max. forward voltage: 1.15V
Max. forward impulse current: 100A
Kind of package: reel; tape
Produkt ist nicht verfügbar
ES3BB-13-F ES3BB-13-F DIODES INCORPORATED ES3x_ES3xB.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 3A; 25ns; SMB; Ufmax: 0.9V; Ifsm: 100A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 3A
Reverse recovery time: 25ns
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated; superfast switching
Capacitance: 45pF
Case: SMB
Max. forward voltage: 0.9V
Max. forward impulse current: 100A
Kind of package: reel; tape
auf Bestellung 1903 Stücke:
Lieferzeit 14-21 Tag (e)
71+1.02 EUR
168+ 0.43 EUR
187+ 0.38 EUR
236+ 0.3 EUR
249+ 0.29 EUR
Mindestbestellmenge: 71
DMP4047LFDE-7 DMP4047LFDE-7 DIODES INCORPORATED DMP4047LFDE.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -4.9A; 0.7W; U-DFN2020-6
Kind of package: reel; tape
Drain-source voltage: -40V
Drain current: -4.9A
On-state resistance: 50mΩ
Type of transistor: P-MOSFET
Power dissipation: 0.7W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: U-DFN2020-6
auf Bestellung 4277 Stücke:
Lieferzeit 14-21 Tag (e)
76+0.94 EUR
204+ 0.35 EUR
230+ 0.31 EUR
249+ 0.29 EUR
256+ 0.28 EUR
264+ 0.27 EUR
500+ 0.26 EUR
Mindestbestellmenge: 76
DMP4047LFDEQ-13 DIODES INCORPORATED DMP4047LFDEQ.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -5.2A; Idm: -36A; 2.1W
Kind of package: reel; tape
Drain-source voltage: -40V
Drain current: -5.2A
On-state resistance: 50mΩ
Type of transistor: P-MOSFET
Application: automotive industry
Power dissipation: 2.1W
Polarisation: unipolar
Gate charge: 24.9nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -36A
Mounting: SMD
Case: U-DFN2020-6
Produkt ist nicht verfügbar
DMP4047LFDEQ-7 DIODES INCORPORATED DMP4047LFDEQ.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -5.2A; Idm: -36A; 2.1W
Kind of package: reel; tape
Drain-source voltage: -40V
Drain current: -5.2A
On-state resistance: 50mΩ
Type of transistor: P-MOSFET
Power dissipation: 2.1W
Polarisation: unipolar
Gate charge: 24.9nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -36A
Mounting: SMD
Case: U-DFN2020-6
Produkt ist nicht verfügbar
DMP4047SK3-13 DMP4047SK3-13 DIODES INCORPORATED DMP4047SK3.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -18A; 1.6W; TO252
Kind of package: reel; tape
Drain-source voltage: -40V
Drain current: -18A
On-state resistance: 55mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.6W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: TO252
auf Bestellung 1541 Stücke:
Lieferzeit 14-21 Tag (e)
114+0.63 EUR
258+ 0.28 EUR
272+ 0.26 EUR
Mindestbestellmenge: 114
DMP4047SSD-13 DMP4047SSD-13 DIODES INCORPORATED DMP4047SSD.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -5.2A; Idm: -26A; 1.1W; SO8
Kind of package: reel; tape
Drain-source voltage: -40V
Drain current: -5.2A
On-state resistance: 55mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.1W
Polarisation: unipolar
Gate charge: 21.5nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -26A
Mounting: SMD
Case: SO8
Produkt ist nicht verfügbar
DMP4047SSDQ-13 DMP4047SSDQ-13 DIODES INCORPORATED DMP4047SSD.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -5.2A; Idm: -26A; 1.1W; SO8
Kind of package: reel; tape
Drain-source voltage: -40V
Drain current: -5.2A
On-state resistance: 55mΩ
Type of transistor: P-MOSFET
Application: automotive industry
Power dissipation: 1.1W
Polarisation: unipolar
Gate charge: 21.5nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -26A
Mounting: SMD
Case: SO8
Produkt ist nicht verfügbar
SMAJ26A-13-F SMAJ26A-13-F DIODES INCORPORATED SMAJ_ser.pdf Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 400W; 28.9÷31.9V; 9.5A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...31.9V
Max. forward impulse current: 9.5A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 4385 Stücke:
Lieferzeit 14-21 Tag (e)
295+0.24 EUR
610+ 0.12 EUR
685+ 0.1 EUR
895+ 0.08 EUR
945+ 0.076 EUR
Mindestbestellmenge: 295
AP1533SG-13 AP1533SG-13 DIODES INCORPORATED AP1533x-DTE.pdf Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DC/DC converter; Uin: 4÷23VDC; Uout: 0.8÷23VDC; 1.8A; SOP8
Operating temperature: -20...85°C
Mounting: SMD
Output voltage: 0.8...23V DC
Output current: 1.8A
Type of integrated circuit: PMIC
Input voltage: 4...23V DC
Efficiency: 91%
Kind of package: reel; tape
Kind of integrated circuit: DC/DC converter
Topology: buck
Case: SOP8
Frequency: 300kHz
auf Bestellung 683 Stücke:
Lieferzeit 14-21 Tag (e)
67+1.07 EUR
78+ 0.92 EUR
95+ 0.76 EUR
100+ 0.72 EUR
500+ 0.7 EUR
Mindestbestellmenge: 67
AP1538SG-13 AP1538SG-13 DIODES INCORPORATED AP1538x-DTE.pdf Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DC/DC converter; Uin: 3.6÷18VDC; Uout: 0.8÷18VDC; 3A; 92%
Kind of package: reel; tape
Frequency: 300kHz
Output voltage: 0.8...18V DC
Output current: 3A
Type of integrated circuit: PMIC
Input voltage: 3.6...18V DC
Efficiency: 92%
Kind of integrated circuit: DC/DC converter
Topology: buck
Mounting: SMD
Operating temperature: -20...85°C
Case: SOP-8L-DEP
Produkt ist nicht verfügbar
AP2141SG-13 AP2141SG-13 DIODES INCORPORATED AP2141-51.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 0.5A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 0.5A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: SO8
On-state resistance: 95mΩ
Kind of package: reel; tape
Supply voltage: 2.7...5.5V DC
Active logical level: low
Produkt ist nicht verfügbar
AP2142SG-13 AP2142SG-13 DIODES INCORPORATED AP2142_52.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 0.5A; Ch: 2; P-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 0.5A
Number of channels: 2
Kind of output: P-Channel
Mounting: SMD
Case: SO8
On-state resistance: 0.115Ω
Kind of package: reel; tape
Supply voltage: 2.7...5.5V DC
Active logical level: low
Produkt ist nicht verfügbar
AP2146SG-13 AP2146SG-13 DIODES INCORPORATED AP2146_56.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 0.5A; Ch: 2; P-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 0.5A
Number of channels: 2
Kind of output: P-Channel
Mounting: SMD
Case: SO8
On-state resistance: 90mΩ
Kind of package: reel; tape
Supply voltage: 2.7...5.5V DC
Active logical level: low
auf Bestellung 2159 Stücke:
Lieferzeit 14-21 Tag (e)
59+1.22 EUR
127+ 0.57 EUR
144+ 0.5 EUR
161+ 0.44 EUR
171+ 0.42 EUR
Mindestbestellmenge: 59
AP2151SG-13 AP2151SG-13 DIODES INCORPORATED AP2141-51.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 0.5A; Ch: 1; P-Channel; SMD
Output current: 0.5A
Case: SO8
Supply voltage: 2.7...5.5V DC
Mounting: SMD
Type of integrated circuit: power switch
Kind of package: reel; tape
Kind of integrated circuit: high-side; USB switch
On-state resistance: 95mΩ
Number of channels: 1
Kind of output: P-Channel
Active logical level: high
Produkt ist nicht verfügbar
AP2152SG-13 AP2152SG-13 DIODES INCORPORATED AP2142_52.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 0.5A; Ch: 2; P-Channel; SMD
Output current: 0.5A
Case: SO8
Supply voltage: 2.7...5.5V DC
Mounting: SMD
Type of integrated circuit: power switch
Kind of package: reel; tape
Kind of integrated circuit: high-side; USB switch
On-state resistance: 0.115Ω
Number of channels: 2
Kind of output: P-Channel
Active logical level: high
Produkt ist nicht verfügbar
AP2162SG-13 AP2162SG-13 DIODES INCORPORATED AP2162_72.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 1A; Ch: 2; P-Channel; SMD
Supply voltage: 2.7...5.5V DC
Number of channels: 2
Output current: 1A
Kind of output: P-Channel
Active logical level: low
Kind of package: reel; tape
Kind of integrated circuit: high-side; USB switch
Mounting: SMD
Case: SO8
On-state resistance: 0.115Ω
Type of integrated circuit: power switch
Produkt ist nicht verfügbar
AP2166SG-13 AP2166SG-13 DIODES INCORPORATED AP2166_76.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 1A; Ch: 2; P-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Mounting: SMD
Supply voltage: 2.7...5.5V DC
Number of channels: 2
Case: SO8
Kind of package: reel; tape
Output current: 1A
Kind of output: P-Channel
Active logical level: low
On-state resistance: 0.1Ω
auf Bestellung 1670 Stücke:
Lieferzeit 14-21 Tag (e)
61+1.18 EUR
130+ 0.55 EUR
145+ 0.49 EUR
176+ 0.41 EUR
186+ 0.38 EUR
Mindestbestellmenge: 61
BAV20W-7-F BAV20W-7-F DIODES INCORPORATED BAV21W-DTE.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 150V; 200mA; 50ns; SOD123; Ufmax: 1.25V; 200mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 150V
Load current: 0.2A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Capacitance: 5pF
Case: SOD123
Max. forward voltage: 1.25V
Max. load current: 0.625A
Max. forward impulse current: 9A
Power dissipation: 0.2W
Kind of package: reel; tape
auf Bestellung 7050 Stücke:
Lieferzeit 14-21 Tag (e)
556+0.13 EUR
676+ 0.11 EUR
857+ 0.084 EUR
1289+ 0.055 EUR
1866+ 0.038 EUR
2464+ 0.029 EUR
2605+ 0.027 EUR
Mindestbestellmenge: 556
ZXTR2005Z-13 ZXTR2005Z-13 DIODES INCORPORATED ZXTR2005Z.pdf Category: Unregulated voltage regulators
Description: IC: voltage regulator; linear,fixed; 5V; 0.038A; SOT89; SMD; ±10%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 5V
Output current: 38mA
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±10%
Number of channels: 1
Input voltage: 10...100V
auf Bestellung 2470 Stücke:
Lieferzeit 14-21 Tag (e)
67+1.07 EUR
246+ 0.29 EUR
278+ 0.26 EUR
338+ 0.21 EUR
358+ 0.2 EUR
Mindestbestellmenge: 67
SMBJ90A-13-F SMBJ90A-13-F DIODES INCORPORATED SMBJ_ser.pdf Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 100÷115.5V; 4.1A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 90V
Breakdown voltage: 100...115.5V
Max. forward impulse current: 4.1A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
SMBJ85A-13-F SMBJ85A-13-F DIODES INCORPORATED SMBJ_ser.pdf Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 94.4÷108.2V; 4.4A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 85V
Breakdown voltage: 94.4...108.2V
Max. forward impulse current: 4.4A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 40 Stücke:
Lieferzeit 14-21 Tag (e)
40+1.79 EUR
Mindestbestellmenge: 40
BZT52C24S-7-F BZT52C24S-7-F DIODES INCORPORATED BZT52CxxS_ser.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 24V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 24V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
1200+0.06 EUR
1580+ 0.045 EUR
2180+ 0.033 EUR
2300+ 0.031 EUR
Mindestbestellmenge: 1200
DMPH4011SK3-13 DIODES INCORPORATED DMPH4011SK3.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -56A; Idm: -316A; 3.7W; TO252
Mounting: SMD
Drain current: -56A
Kind of channel: enhanced
Drain-source voltage: -40V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: TO252
On-state resistance: 19mΩ
Pulsed drain current: -316A
Power dissipation: 3.7W
Gate charge: 104nC
Polarisation: unipolar
Produkt ist nicht verfügbar
DMPH4011SK3Q-13 DIODES INCORPORATED DMPH4011SK3Q.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -56A; Idm: -316A; 3.7W; TO252
Mounting: SMD
Drain current: -56A
Kind of channel: enhanced
Drain-source voltage: -40V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: TO252
On-state resistance: 19mΩ
Pulsed drain current: -316A
Power dissipation: 3.7W
Gate charge: 104nC
Polarisation: unipolar
Produkt ist nicht verfügbar
DMPH4013SK3-13 DIODES INCORPORATED DMPH4013SK3.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -40A; Idm: -120A; 3.7W; TO252
Mounting: SMD
Drain current: -40A
Kind of channel: enhanced
Drain-source voltage: -40V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: TO252
On-state resistance: 23mΩ
Pulsed drain current: -120A
Power dissipation: 3.7W
Gate charge: 67nC
Polarisation: unipolar
Produkt ist nicht verfügbar
DMPH4013SK3Q-13 DIODES INCORPORATED DMPH4013SK3Q.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -40A; Idm: -120A; 3.7W; TO252
Mounting: SMD
Drain current: -40A
Kind of channel: enhanced
Drain-source voltage: -40V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: TO252
On-state resistance: 23mΩ
Pulsed drain current: -120A
Power dissipation: 3.7W
Gate charge: 67nC
Polarisation: unipolar
Produkt ist nicht verfügbar
DMPH4013SPSQ-13 DIODES INCORPORATED DMPH4013SPSQ.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -49A; Idm: -277A; 3.3W
Mounting: SMD
Drain current: -49A
Kind of channel: enhanced
Drain-source voltage: -40V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: PowerDI5060-8
On-state resistance: 23mΩ
Pulsed drain current: -277A
Power dissipation: 3.3W
Gate charge: 87nC
Polarisation: unipolar
Produkt ist nicht verfügbar
DMPH4015SK3-13 DIODES INCORPORATED Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -10A; Idm: -100A; 3.3W; TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -10A
Pulsed drain current: -100A
Power dissipation: 3.3W
Case: TO252
Gate-source voltage: ±25V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 91nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
DMPH4015SK3Q-13 DIODES INCORPORATED DMPH4015SK3Q.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -10A; Idm: -100A; 3.3W; TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -10A
Pulsed drain current: -100A
Power dissipation: 3.3W
Case: TO252
Gate-source voltage: ±25V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 91nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
DMPH4015SPSQ-13 DIODES INCORPORATED DMPH4015SPSQ.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -9A; Idm: -100A; 2.6W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -9A
Pulsed drain current: -100A
Power dissipation: 2.6W
Case: PowerDI5060-8
Gate-source voltage: ±25V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 91nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
DMPH4015SSS-13 DMPH4015SSS-13 DIODES INCORPORATED DMPH4015SSS.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -8.1A; Idm: -85A; 1.8W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -8.1A
Pulsed drain current: -85A
Power dissipation: 1.8W
Case: SO8
Gate-source voltage: ±25V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 91nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
DMPH4015SSSQ-13 DMPH4015SSSQ-13 DIODES INCORPORATED DMPH4015SSSQ.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -8.1A; Idm: -85A; 1.8W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -8.1A
Pulsed drain current: -85A
Power dissipation: 1.8W
Case: SO8
Gate-source voltage: ±25V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 91nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
DMPH4023SK3-13 DIODES INCORPORATED DMPH4023SK3.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -35A; Idm: -70A; 3.6W; TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -35A
Pulsed drain current: -70A
Power dissipation: 3.6W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 26mΩ
Mounting: SMD
Gate charge: 18.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
DMPH4023SK3Q-13 DIODES INCORPORATED DMPH4023SK3Q.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -35A; Idm: -70A; 3.6W; TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -35A
Pulsed drain current: -70A
Power dissipation: 3.6W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 26mΩ
Mounting: SMD
Gate charge: 18.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
DMPH4025SFVWQ-13 DIODES INCORPORATED Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -7.3A; Idm: -80A; 2.3W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -7.3A
Pulsed drain current: -80A
Power dissipation: 2.3W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 38.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
DMPH4025SFVWQ-7 DIODES INCORPORATED Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -7.3A; Idm: -80A; 2.3W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -7.3A
Pulsed drain current: -80A
Power dissipation: 2.3W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 38.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
DMPH4029LFG-13 DIODES INCORPORATED DMPH4029LFG.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -6.7A; Idm: -88A; 2.8W
Kind of package: reel; tape
Drain-source voltage: -40V
Drain current: -6.7A
On-state resistance: 45mΩ
Type of transistor: P-MOSFET
Power dissipation: 2.8W
Polarisation: unipolar
Gate charge: 34nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -88A
Mounting: SMD
Case: PowerDI3333-8
Produkt ist nicht verfügbar
DMPH4029LFG-7 DIODES INCORPORATED DMPH4029LFG.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -6.7A; Idm: -88A; 2.8W
Kind of package: reel; tape
Drain-source voltage: -40V
Drain current: -6.7A
On-state resistance: 45mΩ
Type of transistor: P-MOSFET
Power dissipation: 2.8W
Polarisation: unipolar
Gate charge: 34nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -88A
Mounting: SMD
Case: PowerDI3333-8
Produkt ist nicht verfügbar
DMPH4029LFGQ-13 DIODES INCORPORATED DMPH4029LFGQ.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -6.7A; Idm: -88A; 2.8W
Kind of package: reel; tape
Drain-source voltage: -40V
Drain current: -6.7A
On-state resistance: 45mΩ
Type of transistor: P-MOSFET
Power dissipation: 2.8W
Polarisation: unipolar
Gate charge: 34nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -88A
Mounting: SMD
Case: PowerDI3333-8
Produkt ist nicht verfügbar
DMPH4029LFGQ-7 DIODES INCORPORATED DMPH4029LFGQ.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -6.7A; Idm: -88A; 2.8W
Kind of package: reel; tape
Drain-source voltage: -40V
Drain current: -6.7A
On-state resistance: 45mΩ
Type of transistor: P-MOSFET
Power dissipation: 2.8W
Polarisation: unipolar
Gate charge: 34nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -88A
Mounting: SMD
Case: PowerDI3333-8
Produkt ist nicht verfügbar
DMP1011LFV-7 DIODES INCORPORATED DMP1011LFV.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -10A; Idm: -70A; 2.16W
Mounting: SMD
Power dissipation: 2.16W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 9.5nC
Kind of channel: enhanced
Gate-source voltage: ±6V
Pulsed drain current: -70A
Case: PowerDI3333-8
Drain-source voltage: -12V
Drain current: -10A
On-state resistance: 18.6mΩ
Type of transistor: P-MOSFET
Produkt ist nicht verfügbar
SMCJ78CA-13-F SMCJ78CA-13-F DIODES INCORPORATED SMCJ_ser.pdf Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 86.7÷95.8V; 11.4A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 78V
Breakdown voltage: 86.7...95.8V
Max. forward impulse current: 11.4A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
PI49FCT3807AHE PI49FCT3807AHE DIODES INCORPORATED PI49FCT3807.pdf Category: Other logic integrated circuits
Description: IC: peripheral circuit; clock buffer,fanout buffer; Ch: 1; 3.3VDC
Type of integrated circuit: peripheral circuit
Kind of integrated circuit: clock buffer; fanout buffer
Number of channels: 1
Supply voltage: 3.3V DC
Mounting: SMD
Case: SSOP20
Operating temperature: -40...85°C
Kind of package: tube
Frequency: 66MHz
Number of inputs/outputs: 1/10
Produkt ist nicht verfügbar
BSS84Q-13-F BSS84Q-13-F DIODES INCORPORATED BSS84.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -50V; -0.13A; 0.3W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -130mA
Power dissipation: 0.3W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 10Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Produkt ist nicht verfügbar
BSS84Q-7-F BSS84Q-7-F DIODES INCORPORATED BSS84.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -50V; -0.13A; 0.3W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -130mA
Power dissipation: 0.3W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 10Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
546+0.13 EUR
715+ 0.1 EUR
799+ 0.09 EUR
826+ 0.087 EUR
1397+ 0.051 EUR
1480+ 0.048 EUR
Mindestbestellmenge: 546
BSS84W-7-F BSS84W-7-F DIODES INCORPORATED BSS84W.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -50V; -0.13A; 0.2W; SOT323
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -130mA
Power dissipation: 0.2W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 10Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 19970 Stücke:
Lieferzeit 14-21 Tag (e)
278+0.26 EUR
363+ 0.2 EUR
495+ 0.14 EUR
564+ 0.13 EUR
640+ 0.11 EUR
1144+ 0.063 EUR
1210+ 0.059 EUR
Mindestbestellmenge: 278
BZT52C9V1-7-F BZT52C9V1-7-F DIODES INCORPORATED BZT52Cxx_ser.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 9.1V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.37W
Zener voltage: 9.1V
Kind of package: reel; tape
Case: SOD123
Mounting: SMD
Tolerance: ±6%
Semiconductor structure: single diode
auf Bestellung 1550 Stücke:
Lieferzeit 14-21 Tag (e)
1525+0.047 EUR
1550+ 0.046 EUR
Mindestbestellmenge: 1525
BC858A-7-F BC858A-7-F DIODES INCORPORATED bc856_7_8.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 0.1A; 350mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.35W
Case: SOT23
Current gain: 125...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Produkt ist nicht verfügbar
BC858AW-7-F BC858AW-7-F DIODES INCORPORATED bc856_7_8W.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 0.1A; 200mW; SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Current gain: 125...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Produkt ist nicht verfügbar
BC858C-7-F BC858C-7-F DIODES INCORPORATED bc856_7_8.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 0.1A; 350mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.35W
Case: SOT23
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
auf Bestellung 5180 Stücke:
Lieferzeit 14-21 Tag (e)
1400+0.051 EUR
2520+ 0.028 EUR
2780+ 0.026 EUR
3520+ 0.02 EUR
3720+ 0.019 EUR
Mindestbestellmenge: 1400
BC858CW-7-F BC858CW-7-F DIODES INCORPORATED BC856AW-BC858CW.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 100mA; 200mW; SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Produkt ist nicht verfügbar
BAV70Q-13-F BAV70Q-13-F DIODES INCORPORATED BAV70.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 150mA; 4ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: common cathode; double
Features of semiconductor devices: small signal
Capacitance: 2pF
Case: SOT23
Max. forward voltage: 1.25V
Max. load current: 0.45A
Max. forward impulse current: 2A
Power dissipation: 0.35W
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
AP7383-41W5-7 AP7383-41W5-7 DIODES INCORPORATED AP7383.pdf Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 4.15V; 0.15A; SOT25; SMD
Type of integrated circuit: voltage regulator
Case: SOT25
Input voltage: 3.5...30V
Output voltage: 4.15V
Output current: 0.15A
Operating temperature: -40...125°C
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Tolerance: ±1%
Kind of voltage regulator: fixed; LDO; linear
Manufacturer series: AP7383
Voltage drop: 1.5V
Produkt ist nicht verfügbar
AP7383-41WW-7 AP7383-41WW-7 DIODES INCORPORATED AP7383.pdf Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 4.1V; 50mA; SOT25; SMD
Type of integrated circuit: voltage regulator
Case: SOT25
Input voltage: 3.5...30V
Output voltage: 4.1V
Output current: 50mA
Operating temperature: -40...125°C
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Tolerance: ±1%
Kind of voltage regulator: fixed; LDO; linear
Manufacturer series: AP7383
Voltage drop: 1.5V
Produkt ist nicht verfügbar
AP7383-41FDC-7 DIODES INCORPORATED AP7383.pdf Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 4.1V; 50mA; uDFN6; SMD
Manufacturer series: AP7383
Operating temperature: -40...125°C
Kind of voltage regulator: fixed; LDO; linear
Input voltage: 3.5...30V
Output current: 50mA
Type of integrated circuit: voltage regulator
Voltage drop: 1.5V
Output voltage: 4.1V
Kind of package: reel; tape
Case: uDFN6
Number of channels: 1
Tolerance: ±1%
Mounting: SMD
Produkt ist nicht verfügbar
ZLDO1117K33TC DIODES INCORPORATED ZLDO1117.pdf Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1A; DPAK; SMD; ±2%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.3V
Output voltage: 3.3V
Output current: 1A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 4.7...12V
Manufacturer series: ZLDO1117
Produkt ist nicht verfügbar
SDT10A100P5-13 DIODES INCORPORATED SDT10A100P5.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 100V; 10A; PowerDI®5; reel,tape
Case: PowerDI®5
Mounting: SMD
Kind of package: reel; tape
Max. off-state voltage: 100V
Max. forward voltage: 0.68V
Load current: 10A
Semiconductor structure: single diode
Max. forward impulse current: 240A
Leakage current: 20mA
Type of diode: Schottky rectifying
Produkt ist nicht verfügbar
BAW56T-7-F BAW56T-7-F DIODES INCORPORATED BAW56T.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 75mA; 4ns; SOT523; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 75mA
Max. load current: 0.5A
Reverse recovery time: 4ns
Semiconductor structure: common anode; double
Capacitance: 1.5pF
Case: SOT523
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Power dissipation: 0.15W
Kind of package: reel; tape
auf Bestellung 740 Stücke:
Lieferzeit 14-21 Tag (e)
740+0.097 EUR
Mindestbestellmenge: 740
S1BB-13-F s1ab-s1mb.pdf
S1BB-13-F
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 1A; 1.8us; SMB; Ufmax: 1.1V; Ifsm: 30A
Mounting: SMD
Features of semiconductor devices: glass passivated
Max. off-state voltage: 100V
Load current: 1A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SMB
Capacitance: 10pF
Type of diode: rectifying
Reverse recovery time: 1.8µs
Max. forward impulse current: 30A
Max. forward voltage: 1.1V
auf Bestellung 425 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
350+0.2 EUR
425+ 0.17 EUR
Mindestbestellmenge: 350
S3BB-13-F ds16005.pdf
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 3A; SMB; Ufmax: 1.15V; Ifsm: 100A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 3A
Semiconductor structure: single diode
Capacitance: 40pF
Case: SMB
Max. forward voltage: 1.15V
Max. forward impulse current: 100A
Kind of package: reel; tape
Produkt ist nicht verfügbar
ES3BB-13-F ES3x_ES3xB.pdf
ES3BB-13-F
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 3A; 25ns; SMB; Ufmax: 0.9V; Ifsm: 100A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 3A
Reverse recovery time: 25ns
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated; superfast switching
Capacitance: 45pF
Case: SMB
Max. forward voltage: 0.9V
Max. forward impulse current: 100A
Kind of package: reel; tape
auf Bestellung 1903 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
71+1.02 EUR
168+ 0.43 EUR
187+ 0.38 EUR
236+ 0.3 EUR
249+ 0.29 EUR
Mindestbestellmenge: 71
DMP4047LFDE-7 DMP4047LFDE.pdf
DMP4047LFDE-7
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -4.9A; 0.7W; U-DFN2020-6
Kind of package: reel; tape
Drain-source voltage: -40V
Drain current: -4.9A
On-state resistance: 50mΩ
Type of transistor: P-MOSFET
Power dissipation: 0.7W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: U-DFN2020-6
auf Bestellung 4277 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
76+0.94 EUR
204+ 0.35 EUR
230+ 0.31 EUR
249+ 0.29 EUR
256+ 0.28 EUR
264+ 0.27 EUR
500+ 0.26 EUR
Mindestbestellmenge: 76
DMP4047LFDEQ-13 DMP4047LFDEQ.pdf
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -5.2A; Idm: -36A; 2.1W
Kind of package: reel; tape
Drain-source voltage: -40V
Drain current: -5.2A
On-state resistance: 50mΩ
Type of transistor: P-MOSFET
Application: automotive industry
Power dissipation: 2.1W
Polarisation: unipolar
Gate charge: 24.9nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -36A
Mounting: SMD
Case: U-DFN2020-6
Produkt ist nicht verfügbar
DMP4047LFDEQ-7 DMP4047LFDEQ.pdf
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -5.2A; Idm: -36A; 2.1W
Kind of package: reel; tape
Drain-source voltage: -40V
Drain current: -5.2A
On-state resistance: 50mΩ
Type of transistor: P-MOSFET
Power dissipation: 2.1W
Polarisation: unipolar
Gate charge: 24.9nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -36A
Mounting: SMD
Case: U-DFN2020-6
Produkt ist nicht verfügbar
DMP4047SK3-13 DMP4047SK3.pdf
DMP4047SK3-13
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -18A; 1.6W; TO252
Kind of package: reel; tape
Drain-source voltage: -40V
Drain current: -18A
On-state resistance: 55mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.6W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: TO252
auf Bestellung 1541 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
114+0.63 EUR
258+ 0.28 EUR
272+ 0.26 EUR
Mindestbestellmenge: 114
DMP4047SSD-13 DMP4047SSD.pdf
DMP4047SSD-13
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -5.2A; Idm: -26A; 1.1W; SO8
Kind of package: reel; tape
Drain-source voltage: -40V
Drain current: -5.2A
On-state resistance: 55mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.1W
Polarisation: unipolar
Gate charge: 21.5nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -26A
Mounting: SMD
Case: SO8
Produkt ist nicht verfügbar
DMP4047SSDQ-13 DMP4047SSD.pdf
DMP4047SSDQ-13
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -5.2A; Idm: -26A; 1.1W; SO8
Kind of package: reel; tape
Drain-source voltage: -40V
Drain current: -5.2A
On-state resistance: 55mΩ
Type of transistor: P-MOSFET
Application: automotive industry
Power dissipation: 1.1W
Polarisation: unipolar
Gate charge: 21.5nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -26A
Mounting: SMD
Case: SO8
Produkt ist nicht verfügbar
SMAJ26A-13-F SMAJ_ser.pdf
SMAJ26A-13-F
Hersteller: DIODES INCORPORATED
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 400W; 28.9÷31.9V; 9.5A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...31.9V
Max. forward impulse current: 9.5A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 4385 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
295+0.24 EUR
610+ 0.12 EUR
685+ 0.1 EUR
895+ 0.08 EUR
945+ 0.076 EUR
Mindestbestellmenge: 295
AP1533SG-13 AP1533x-DTE.pdf
AP1533SG-13
Hersteller: DIODES INCORPORATED
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DC/DC converter; Uin: 4÷23VDC; Uout: 0.8÷23VDC; 1.8A; SOP8
Operating temperature: -20...85°C
Mounting: SMD
Output voltage: 0.8...23V DC
Output current: 1.8A
Type of integrated circuit: PMIC
Input voltage: 4...23V DC
Efficiency: 91%
Kind of package: reel; tape
Kind of integrated circuit: DC/DC converter
Topology: buck
Case: SOP8
Frequency: 300kHz
auf Bestellung 683 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
67+1.07 EUR
78+ 0.92 EUR
95+ 0.76 EUR
100+ 0.72 EUR
500+ 0.7 EUR
Mindestbestellmenge: 67
AP1538SG-13 AP1538x-DTE.pdf
AP1538SG-13
Hersteller: DIODES INCORPORATED
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DC/DC converter; Uin: 3.6÷18VDC; Uout: 0.8÷18VDC; 3A; 92%
Kind of package: reel; tape
Frequency: 300kHz
Output voltage: 0.8...18V DC
Output current: 3A
Type of integrated circuit: PMIC
Input voltage: 3.6...18V DC
Efficiency: 92%
Kind of integrated circuit: DC/DC converter
Topology: buck
Mounting: SMD
Operating temperature: -20...85°C
Case: SOP-8L-DEP
Produkt ist nicht verfügbar
AP2141SG-13 AP2141-51.pdf
AP2141SG-13
Hersteller: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 0.5A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 0.5A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: SO8
On-state resistance: 95mΩ
Kind of package: reel; tape
Supply voltage: 2.7...5.5V DC
Active logical level: low
Produkt ist nicht verfügbar
AP2142SG-13 AP2142_52.pdf
AP2142SG-13
Hersteller: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 0.5A; Ch: 2; P-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 0.5A
Number of channels: 2
Kind of output: P-Channel
Mounting: SMD
Case: SO8
On-state resistance: 0.115Ω
Kind of package: reel; tape
Supply voltage: 2.7...5.5V DC
Active logical level: low
Produkt ist nicht verfügbar
AP2146SG-13 AP2146_56.pdf
AP2146SG-13
Hersteller: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 0.5A; Ch: 2; P-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 0.5A
Number of channels: 2
Kind of output: P-Channel
Mounting: SMD
Case: SO8
On-state resistance: 90mΩ
Kind of package: reel; tape
Supply voltage: 2.7...5.5V DC
Active logical level: low
auf Bestellung 2159 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
59+1.22 EUR
127+ 0.57 EUR
144+ 0.5 EUR
161+ 0.44 EUR
171+ 0.42 EUR
Mindestbestellmenge: 59
AP2151SG-13 AP2141-51.pdf
AP2151SG-13
Hersteller: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 0.5A; Ch: 1; P-Channel; SMD
Output current: 0.5A
Case: SO8
Supply voltage: 2.7...5.5V DC
Mounting: SMD
Type of integrated circuit: power switch
Kind of package: reel; tape
Kind of integrated circuit: high-side; USB switch
On-state resistance: 95mΩ
Number of channels: 1
Kind of output: P-Channel
Active logical level: high
Produkt ist nicht verfügbar
AP2152SG-13 AP2142_52.pdf
AP2152SG-13
Hersteller: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 0.5A; Ch: 2; P-Channel; SMD
Output current: 0.5A
Case: SO8
Supply voltage: 2.7...5.5V DC
Mounting: SMD
Type of integrated circuit: power switch
Kind of package: reel; tape
Kind of integrated circuit: high-side; USB switch
On-state resistance: 0.115Ω
Number of channels: 2
Kind of output: P-Channel
Active logical level: high
Produkt ist nicht verfügbar
AP2162SG-13 AP2162_72.pdf
AP2162SG-13
Hersteller: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 1A; Ch: 2; P-Channel; SMD
Supply voltage: 2.7...5.5V DC
Number of channels: 2
Output current: 1A
Kind of output: P-Channel
Active logical level: low
Kind of package: reel; tape
Kind of integrated circuit: high-side; USB switch
Mounting: SMD
Case: SO8
On-state resistance: 0.115Ω
Type of integrated circuit: power switch
Produkt ist nicht verfügbar
AP2166SG-13 AP2166_76.pdf
AP2166SG-13
Hersteller: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 1A; Ch: 2; P-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Mounting: SMD
Supply voltage: 2.7...5.5V DC
Number of channels: 2
Case: SO8
Kind of package: reel; tape
Output current: 1A
Kind of output: P-Channel
Active logical level: low
On-state resistance: 0.1Ω
auf Bestellung 1670 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
61+1.18 EUR
130+ 0.55 EUR
145+ 0.49 EUR
176+ 0.41 EUR
186+ 0.38 EUR
Mindestbestellmenge: 61
BAV20W-7-F BAV21W-DTE.pdf
BAV20W-7-F
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 150V; 200mA; 50ns; SOD123; Ufmax: 1.25V; 200mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 150V
Load current: 0.2A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Capacitance: 5pF
Case: SOD123
Max. forward voltage: 1.25V
Max. load current: 0.625A
Max. forward impulse current: 9A
Power dissipation: 0.2W
Kind of package: reel; tape
auf Bestellung 7050 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
556+0.13 EUR
676+ 0.11 EUR
857+ 0.084 EUR
1289+ 0.055 EUR
1866+ 0.038 EUR
2464+ 0.029 EUR
2605+ 0.027 EUR
Mindestbestellmenge: 556
ZXTR2005Z-13 ZXTR2005Z.pdf
ZXTR2005Z-13
Hersteller: DIODES INCORPORATED
Category: Unregulated voltage regulators
Description: IC: voltage regulator; linear,fixed; 5V; 0.038A; SOT89; SMD; ±10%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 5V
Output current: 38mA
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±10%
Number of channels: 1
Input voltage: 10...100V
auf Bestellung 2470 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
67+1.07 EUR
246+ 0.29 EUR
278+ 0.26 EUR
338+ 0.21 EUR
358+ 0.2 EUR
Mindestbestellmenge: 67
SMBJ90A-13-F SMBJ_ser.pdf
SMBJ90A-13-F
Hersteller: DIODES INCORPORATED
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 100÷115.5V; 4.1A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 90V
Breakdown voltage: 100...115.5V
Max. forward impulse current: 4.1A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
SMBJ85A-13-F SMBJ_ser.pdf
SMBJ85A-13-F
Hersteller: DIODES INCORPORATED
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 94.4÷108.2V; 4.4A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 85V
Breakdown voltage: 94.4...108.2V
Max. forward impulse current: 4.4A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 40 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
40+1.79 EUR
Mindestbestellmenge: 40
BZT52C24S-7-F BZT52CxxS_ser.pdf
BZT52C24S-7-F
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 24V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 24V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
1200+0.06 EUR
1580+ 0.045 EUR
2180+ 0.033 EUR
2300+ 0.031 EUR
Mindestbestellmenge: 1200
DMPH4011SK3-13 DMPH4011SK3.pdf
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -56A; Idm: -316A; 3.7W; TO252
Mounting: SMD
Drain current: -56A
Kind of channel: enhanced
Drain-source voltage: -40V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: TO252
On-state resistance: 19mΩ
Pulsed drain current: -316A
Power dissipation: 3.7W
Gate charge: 104nC
Polarisation: unipolar
Produkt ist nicht verfügbar
DMPH4011SK3Q-13 DMPH4011SK3Q.pdf
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -56A; Idm: -316A; 3.7W; TO252
Mounting: SMD
Drain current: -56A
Kind of channel: enhanced
Drain-source voltage: -40V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: TO252
On-state resistance: 19mΩ
Pulsed drain current: -316A
Power dissipation: 3.7W
Gate charge: 104nC
Polarisation: unipolar
Produkt ist nicht verfügbar
DMPH4013SK3-13 DMPH4013SK3.pdf
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -40A; Idm: -120A; 3.7W; TO252
Mounting: SMD
Drain current: -40A
Kind of channel: enhanced
Drain-source voltage: -40V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: TO252
On-state resistance: 23mΩ
Pulsed drain current: -120A
Power dissipation: 3.7W
Gate charge: 67nC
Polarisation: unipolar
Produkt ist nicht verfügbar
DMPH4013SK3Q-13 DMPH4013SK3Q.pdf
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -40A; Idm: -120A; 3.7W; TO252
Mounting: SMD
Drain current: -40A
Kind of channel: enhanced
Drain-source voltage: -40V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: TO252
On-state resistance: 23mΩ
Pulsed drain current: -120A
Power dissipation: 3.7W
Gate charge: 67nC
Polarisation: unipolar
Produkt ist nicht verfügbar
DMPH4013SPSQ-13 DMPH4013SPSQ.pdf
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -49A; Idm: -277A; 3.3W
Mounting: SMD
Drain current: -49A
Kind of channel: enhanced
Drain-source voltage: -40V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: PowerDI5060-8
On-state resistance: 23mΩ
Pulsed drain current: -277A
Power dissipation: 3.3W
Gate charge: 87nC
Polarisation: unipolar
Produkt ist nicht verfügbar
DMPH4015SK3-13
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -10A; Idm: -100A; 3.3W; TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -10A
Pulsed drain current: -100A
Power dissipation: 3.3W
Case: TO252
Gate-source voltage: ±25V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 91nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
DMPH4015SK3Q-13 DMPH4015SK3Q.pdf
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -10A; Idm: -100A; 3.3W; TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -10A
Pulsed drain current: -100A
Power dissipation: 3.3W
Case: TO252
Gate-source voltage: ±25V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 91nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
DMPH4015SPSQ-13 DMPH4015SPSQ.pdf
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -9A; Idm: -100A; 2.6W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -9A
Pulsed drain current: -100A
Power dissipation: 2.6W
Case: PowerDI5060-8
Gate-source voltage: ±25V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 91nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
DMPH4015SSS-13 DMPH4015SSS.pdf
DMPH4015SSS-13
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -8.1A; Idm: -85A; 1.8W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -8.1A
Pulsed drain current: -85A
Power dissipation: 1.8W
Case: SO8
Gate-source voltage: ±25V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 91nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
DMPH4015SSSQ-13 DMPH4015SSSQ.pdf
DMPH4015SSSQ-13
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -8.1A; Idm: -85A; 1.8W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -8.1A
Pulsed drain current: -85A
Power dissipation: 1.8W
Case: SO8
Gate-source voltage: ±25V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 91nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
DMPH4023SK3-13 DMPH4023SK3.pdf
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -35A; Idm: -70A; 3.6W; TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -35A
Pulsed drain current: -70A
Power dissipation: 3.6W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 26mΩ
Mounting: SMD
Gate charge: 18.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
DMPH4023SK3Q-13 DMPH4023SK3Q.pdf
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -35A; Idm: -70A; 3.6W; TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -35A
Pulsed drain current: -70A
Power dissipation: 3.6W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 26mΩ
Mounting: SMD
Gate charge: 18.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
DMPH4025SFVWQ-13
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -7.3A; Idm: -80A; 2.3W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -7.3A
Pulsed drain current: -80A
Power dissipation: 2.3W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 38.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
DMPH4025SFVWQ-7
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -7.3A; Idm: -80A; 2.3W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -7.3A
Pulsed drain current: -80A
Power dissipation: 2.3W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 38.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
DMPH4029LFG-13 DMPH4029LFG.pdf
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -6.7A; Idm: -88A; 2.8W
Kind of package: reel; tape
Drain-source voltage: -40V
Drain current: -6.7A
On-state resistance: 45mΩ
Type of transistor: P-MOSFET
Power dissipation: 2.8W
Polarisation: unipolar
Gate charge: 34nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -88A
Mounting: SMD
Case: PowerDI3333-8
Produkt ist nicht verfügbar
DMPH4029LFG-7 DMPH4029LFG.pdf
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -6.7A; Idm: -88A; 2.8W
Kind of package: reel; tape
Drain-source voltage: -40V
Drain current: -6.7A
On-state resistance: 45mΩ
Type of transistor: P-MOSFET
Power dissipation: 2.8W
Polarisation: unipolar
Gate charge: 34nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -88A
Mounting: SMD
Case: PowerDI3333-8
Produkt ist nicht verfügbar
DMPH4029LFGQ-13 DMPH4029LFGQ.pdf
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -6.7A; Idm: -88A; 2.8W
Kind of package: reel; tape
Drain-source voltage: -40V
Drain current: -6.7A
On-state resistance: 45mΩ
Type of transistor: P-MOSFET
Power dissipation: 2.8W
Polarisation: unipolar
Gate charge: 34nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -88A
Mounting: SMD
Case: PowerDI3333-8
Produkt ist nicht verfügbar
DMPH4029LFGQ-7 DMPH4029LFGQ.pdf
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -6.7A; Idm: -88A; 2.8W
Kind of package: reel; tape
Drain-source voltage: -40V
Drain current: -6.7A
On-state resistance: 45mΩ
Type of transistor: P-MOSFET
Power dissipation: 2.8W
Polarisation: unipolar
Gate charge: 34nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -88A
Mounting: SMD
Case: PowerDI3333-8
Produkt ist nicht verfügbar
DMP1011LFV-7 DMP1011LFV.pdf
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -10A; Idm: -70A; 2.16W
Mounting: SMD
Power dissipation: 2.16W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 9.5nC
Kind of channel: enhanced
Gate-source voltage: ±6V
Pulsed drain current: -70A
Case: PowerDI3333-8
Drain-source voltage: -12V
Drain current: -10A
On-state resistance: 18.6mΩ
Type of transistor: P-MOSFET
Produkt ist nicht verfügbar
SMCJ78CA-13-F SMCJ_ser.pdf
SMCJ78CA-13-F
Hersteller: DIODES INCORPORATED
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 86.7÷95.8V; 11.4A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 78V
Breakdown voltage: 86.7...95.8V
Max. forward impulse current: 11.4A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
PI49FCT3807AHE PI49FCT3807.pdf
PI49FCT3807AHE
Hersteller: DIODES INCORPORATED
Category: Other logic integrated circuits
Description: IC: peripheral circuit; clock buffer,fanout buffer; Ch: 1; 3.3VDC
Type of integrated circuit: peripheral circuit
Kind of integrated circuit: clock buffer; fanout buffer
Number of channels: 1
Supply voltage: 3.3V DC
Mounting: SMD
Case: SSOP20
Operating temperature: -40...85°C
Kind of package: tube
Frequency: 66MHz
Number of inputs/outputs: 1/10
Produkt ist nicht verfügbar
BSS84Q-13-F BSS84.pdf
BSS84Q-13-F
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -50V; -0.13A; 0.3W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -130mA
Power dissipation: 0.3W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 10Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Produkt ist nicht verfügbar
BSS84Q-7-F BSS84.pdf
BSS84Q-7-F
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -50V; -0.13A; 0.3W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -130mA
Power dissipation: 0.3W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 10Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
546+0.13 EUR
715+ 0.1 EUR
799+ 0.09 EUR
826+ 0.087 EUR
1397+ 0.051 EUR
1480+ 0.048 EUR
Mindestbestellmenge: 546
BSS84W-7-F BSS84W.pdf
BSS84W-7-F
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -50V; -0.13A; 0.2W; SOT323
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -130mA
Power dissipation: 0.2W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 10Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 19970 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
278+0.26 EUR
363+ 0.2 EUR
495+ 0.14 EUR
564+ 0.13 EUR
640+ 0.11 EUR
1144+ 0.063 EUR
1210+ 0.059 EUR
Mindestbestellmenge: 278
BZT52C9V1-7-F BZT52Cxx_ser.pdf
BZT52C9V1-7-F
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 9.1V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.37W
Zener voltage: 9.1V
Kind of package: reel; tape
Case: SOD123
Mounting: SMD
Tolerance: ±6%
Semiconductor structure: single diode
auf Bestellung 1550 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
1525+0.047 EUR
1550+ 0.046 EUR
Mindestbestellmenge: 1525
BC858A-7-F bc856_7_8.pdf
BC858A-7-F
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 0.1A; 350mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.35W
Case: SOT23
Current gain: 125...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Produkt ist nicht verfügbar
BC858AW-7-F bc856_7_8W.pdf
BC858AW-7-F
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 0.1A; 200mW; SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Current gain: 125...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Produkt ist nicht verfügbar
BC858C-7-F bc856_7_8.pdf
BC858C-7-F
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 0.1A; 350mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.35W
Case: SOT23
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
auf Bestellung 5180 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
1400+0.051 EUR
2520+ 0.028 EUR
2780+ 0.026 EUR
3520+ 0.02 EUR
3720+ 0.019 EUR
Mindestbestellmenge: 1400
BC858CW-7-F BC856AW-BC858CW.pdf
BC858CW-7-F
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 100mA; 200mW; SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Produkt ist nicht verfügbar
BAV70Q-13-F BAV70.pdf
BAV70Q-13-F
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 150mA; 4ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: common cathode; double
Features of semiconductor devices: small signal
Capacitance: 2pF
Case: SOT23
Max. forward voltage: 1.25V
Max. load current: 0.45A
Max. forward impulse current: 2A
Power dissipation: 0.35W
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
AP7383-41W5-7 AP7383.pdf
AP7383-41W5-7
Hersteller: DIODES INCORPORATED
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 4.15V; 0.15A; SOT25; SMD
Type of integrated circuit: voltage regulator
Case: SOT25
Input voltage: 3.5...30V
Output voltage: 4.15V
Output current: 0.15A
Operating temperature: -40...125°C
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Tolerance: ±1%
Kind of voltage regulator: fixed; LDO; linear
Manufacturer series: AP7383
Voltage drop: 1.5V
Produkt ist nicht verfügbar
AP7383-41WW-7 AP7383.pdf
AP7383-41WW-7
Hersteller: DIODES INCORPORATED
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 4.1V; 50mA; SOT25; SMD
Type of integrated circuit: voltage regulator
Case: SOT25
Input voltage: 3.5...30V
Output voltage: 4.1V
Output current: 50mA
Operating temperature: -40...125°C
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Tolerance: ±1%
Kind of voltage regulator: fixed; LDO; linear
Manufacturer series: AP7383
Voltage drop: 1.5V
Produkt ist nicht verfügbar
AP7383-41FDC-7 AP7383.pdf
Hersteller: DIODES INCORPORATED
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 4.1V; 50mA; uDFN6; SMD
Manufacturer series: AP7383
Operating temperature: -40...125°C
Kind of voltage regulator: fixed; LDO; linear
Input voltage: 3.5...30V
Output current: 50mA
Type of integrated circuit: voltage regulator
Voltage drop: 1.5V
Output voltage: 4.1V
Kind of package: reel; tape
Case: uDFN6
Number of channels: 1
Tolerance: ±1%
Mounting: SMD
Produkt ist nicht verfügbar
ZLDO1117K33TC ZLDO1117.pdf
Hersteller: DIODES INCORPORATED
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1A; DPAK; SMD; ±2%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.3V
Output voltage: 3.3V
Output current: 1A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 4.7...12V
Manufacturer series: ZLDO1117
Produkt ist nicht verfügbar
SDT10A100P5-13 SDT10A100P5.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 100V; 10A; PowerDI®5; reel,tape
Case: PowerDI®5
Mounting: SMD
Kind of package: reel; tape
Max. off-state voltage: 100V
Max. forward voltage: 0.68V
Load current: 10A
Semiconductor structure: single diode
Max. forward impulse current: 240A
Leakage current: 20mA
Type of diode: Schottky rectifying
Produkt ist nicht verfügbar
BAW56T-7-F BAW56T.pdf
BAW56T-7-F
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 75mA; 4ns; SOT523; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 75mA
Max. load current: 0.5A
Reverse recovery time: 4ns
Semiconductor structure: common anode; double
Capacitance: 1.5pF
Case: SOT523
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Power dissipation: 0.15W
Kind of package: reel; tape
auf Bestellung 740 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
740+0.097 EUR
Mindestbestellmenge: 740
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