Produkte > DIODES INCORPORATED > Alle Produkte des Herstellers DIODES INCORPORATED (75524) > Seite 1213 nach 1259
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| DMN6040SK3-13 | DIODES INCORPORATED |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 13A; Idm: 30A; 17W; TO252 Kind of package: reel; tape Mounting: SMD Case: TO252 Drain-source voltage: 60V Drain current: 13A On-state resistance: 50mΩ Type of transistor: N-MOSFET Power dissipation: 17W Polarisation: unipolar Gate charge: 22.4nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 30A |
Produkt ist nicht verfügbar |
||||||||||||
| DMN6040SK3Q-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 13A; Idm: 30A; 17W; TO252 Kind of package: reel; tape Mounting: SMD Case: TO252 Drain-source voltage: 60V Drain current: 13A On-state resistance: 50mΩ Type of transistor: N-MOSFET Application: automotive industry Power dissipation: 17W Polarisation: unipolar Gate charge: 22.4nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 30A |
Produkt ist nicht verfügbar |
||||||||||||
 |
DMN6040SSD-13 | DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 60V; 4.1A; 0.8W; SO8 Kind of package: reel; tape Mounting: SMD Case: SO8 Drain-source voltage: 60V Drain current: 4.1A On-state resistance: 55mΩ Type of transistor: N-MOSFET x2 Power dissipation: 0.8W Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±20V |
auf Bestellung 1572 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||
 |
DMN6040SSDQ-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 5.3A; Idm: 30A; 1.1W; SO8 Kind of package: reel; tape Mounting: SMD Case: SO8 Drain-source voltage: 60V Drain current: 5.3A On-state resistance: 55mΩ Type of transistor: N-MOSFET Application: automotive industry Power dissipation: 1.1W Polarisation: unipolar Gate charge: 22.4nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 30A |
Produkt ist nicht verfügbar |
|||||||||||
|
|
DMN6040SSDQ13 | DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 60V; 4.1A; Idm: 30A; 0.8W; SO8 Kind of package: reel; tape Mounting: SMD Case: SO8 Drain-source voltage: 60V Drain current: 4.1A On-state resistance: 55mΩ Type of transistor: N-MOSFET x2 Application: automotive industry Power dissipation: 0.8W Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 30A |
Produkt ist nicht verfügbar |
|||||||||||
|
|
DMN6040SSS-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 4.4A; 1W; SO8 Kind of package: reel; tape Mounting: SMD Case: SO8 Drain-source voltage: 60V Drain current: 4.4A On-state resistance: 55mΩ Type of transistor: N-MOSFET Power dissipation: 1W Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±20V |
auf Bestellung 4382 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||
 |
DMN6040SVT-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 5A; Idm: 30A; 1.1W; TSOT26 Kind of package: reel; tape Mounting: SMD Case: TSOT26 Drain-source voltage: 60V Drain current: 5A On-state resistance: 60mΩ Type of transistor: N-MOSFET Power dissipation: 1.1W Polarisation: unipolar Gate charge: 22.4nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 30A |
Produkt ist nicht verfügbar |
|||||||||||
|
|
DMN6040SVTQ-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 5A; Idm: 30A; 1.1W; TSOT26 Kind of package: reel; tape Mounting: SMD Case: TSOT26 Drain-source voltage: 60V Drain current: 5A On-state resistance: 60mΩ Type of transistor: N-MOSFET Application: automotive industry Power dissipation: 1.1W Polarisation: unipolar Gate charge: 22.4nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 30A |
Produkt ist nicht verfügbar |
|||||||||||
|
|
DMN6040SVTQ-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 5A; Idm: 30A; 1.1W; TSOT26 Kind of package: reel; tape Mounting: SMD Case: TSOT26 Drain-source voltage: 60V Drain current: 5A On-state resistance: 60mΩ Type of transistor: N-MOSFET Power dissipation: 1.1W Polarisation: unipolar Gate charge: 22.4nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 30A |
Produkt ist nicht verfügbar |
|||||||||||
| DMP2065UFDB-7 | DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -20V; -3.2A; 0.74W; U-DFN2020-6 Type of transistor: P-MOSFET x2 Polarisation: unipolar Drain-source voltage: -20V Drain current: -3.2A Power dissipation: 0.74W Case: U-DFN2020-6 Gate-source voltage: ±12V On-state resistance: 0.1Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
||||||||||||
 |
DMP2240UDM-7 | DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -20V; -1.5A; 0.6W; SOT26 Type of transistor: P-MOSFET x2 Polarisation: unipolar Drain-source voltage: -20V Drain current: -1.5A Power dissipation: 0.6W Case: SOT26 Gate-source voltage: ±12V Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
auf Bestellung 6972 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||
| DMP22D5UDJ-7A | DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -20V; -290mA; Idm: -1.1A; 380mW Type of transistor: P-MOSFET x2 Polarisation: unipolar Drain-source voltage: -20V Drain current: -290mA Pulsed drain current: -1.1A Power dissipation: 0.38W Case: SOT963 Gate-source voltage: ±8V On-state resistance: 5Ω Mounting: SMD Gate charge: 300pC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
||||||||||||
| DMP2900UV-13 | DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -20V; -680mA; Idm: -2.5A; 800mW Type of transistor: P-MOSFET x2 Polarisation: unipolar Drain-source voltage: -20V Drain current: -0.68A Pulsed drain current: -2.5A Power dissipation: 0.8W Case: SOT563 Gate-source voltage: ±6V On-state resistance: 25Ω Mounting: SMD Gate charge: 0.7nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
||||||||||||
| DMP2900UV-7 | DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -20V; -680mA; Idm: -2.5A; 800mW Type of transistor: P-MOSFET x2 Polarisation: unipolar Drain-source voltage: -20V Drain current: -0.68A Pulsed drain current: -2.5A Power dissipation: 0.8W Case: SOT563 Gate-source voltage: ±6V On-state resistance: 25Ω Mounting: SMD Gate charge: 0.7nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
||||||||||||
|
|
DMP3098LSD-13 | DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -30V; -3.3A; Idm: -15A; 1.8W; SO8 Type of transistor: P-MOSFET x2 Polarisation: unipolar Drain-source voltage: -30V Drain current: -3.3A Pulsed drain current: -15A Power dissipation: 1.8W Case: SO8 Gate-source voltage: ±20V On-state resistance: 65mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
|||||||||||
|
|
DMP3165SVT-7 | DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -30V; -2.2A; Idm: -15A; 0.88W Type of transistor: P-MOSFET x2 Polarisation: unipolar Drain-source voltage: -30V Drain current: -2.2A Pulsed drain current: -15A Power dissipation: 0.88W Case: TSOT26 Gate-source voltage: ±20V On-state resistance: 0.2Ω Mounting: SMD Gate charge: 6.8nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
|||||||||||
|
|
DMP4050SSD-13 | DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -40V; -4A; Idm: -20A; 1.25W; SO8 Type of transistor: P-MOSFET x2 Polarisation: unipolar Drain-source voltage: -40V Drain current: -4A Pulsed drain current: -20A Power dissipation: 1.25W Case: SO8 Gate-source voltage: ±20V On-state resistance: 79mΩ Mounting: SMD Gate charge: 13.9nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
|||||||||||
|
|
DMP4050SSDQ-13 | DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -40V; -4.1A; 1.25W; SO8 Type of transistor: P-MOSFET x2 Polarisation: unipolar Drain-source voltage: -40V Drain current: -4.1A Power dissipation: 1.25W Case: SO8 Gate-source voltage: ±20V On-state resistance: 79mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry |
Produkt ist nicht verfügbar |
|||||||||||
 |
DMP58D0SV-7 | DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -50V; -0.16A; 0.4W; SOT563 Type of transistor: P-MOSFET x2 Polarisation: unipolar Drain-source voltage: -50V Drain current: -0.16A Power dissipation: 0.4W Case: SOT563 Gate-source voltage: ±20V On-state resistance: 8Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
Produkt ist nicht verfügbar |
|||||||||||
|
|
DMPH6050SSD-13 | DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -60V; -4.7A; 1.5W; SO8 Type of transistor: P-MOSFET x2 Polarisation: unipolar Drain-source voltage: -60V Drain current: -4.7A Power dissipation: 1.5W Case: SO8 Gate-source voltage: ±20V On-state resistance: 60mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
|||||||||||
| SDT3045VCT | DIODES INCORPORATED |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 45V; 15Ax2; TO220AB; tube Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 45V Load current: 15A x2 Semiconductor structure: common cathode; double Max. forward voltage: 0.5V Case: TO220AB Kind of package: tube Leakage current: 100mA Max. forward impulse current: 250A |
Produkt ist nicht verfügbar |
||||||||||||
 |
SDT3060VCT | DIODES INCORPORATED |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 60V; 15Ax2; TO220AB; tube; Ir: 50mA Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 60V Load current: 15A x2 Semiconductor structure: common cathode; double Max. forward voltage: 0.6V Case: TO220AB Kind of package: tube Leakage current: 50mA Max. forward impulse current: 200A |
auf Bestellung 228 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||
| MBRB10200CT-13 | DIODES INCORPORATED |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 200V; 5Ax2; D2PAK; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 5A x2 Semiconductor structure: common cathode; double Max. forward voltage: 0.91V Case: D2PAK Kind of package: reel; tape Leakage current: 10mA Max. forward impulse current: 110A |
Produkt ist nicht verfügbar |
||||||||||||
 |
ZXRE125DFTA | DIODES INCORPORATED |
Category: Reference voltage sources - circuits Description: IC: voltage reference source; 1.22V; ±1%; SOT23; reel,tape; 10mA Type of integrated circuit: voltage reference source Reference voltage: 1.22V Tolerance: ±1% Mounting: SMD Case: SOT23 Operating temperature: -40...85°C Kind of package: reel; tape Maximum output current: 10mA |
Produkt ist nicht verfügbar |
|||||||||||
| 74LVC06AT14-13 | DIODES INCORPORATED |
Category: Buffers, transceivers, drivers Description: IC: digital; inverter; Ch: 6; CMOS; SMD; TSSOP14; 1.65÷5.5VDC; LVC Type of integrated circuit: digital Kind of integrated circuit: inverter Number of channels: 6 Technology: CMOS Mounting: SMD Case: TSSOP14 Supply voltage: 1.65...5.5V DC Operating temperature: -40...150°C Kind of output: open drain Kind of package: reel; tape Family: LVC |
Produkt ist nicht verfügbar |
||||||||||||
| 74LVC08AS14-13 | DIODES INCORPORATED |
Category: Gates, inverters Description: IC: digital; AND; Ch: 4; IN: 2; CMOS; SMD; SO14; 1.65÷5.5VDC; -40÷150°C Type of integrated circuit: digital Kind of gate: AND Number of channels: 4 Number of inputs: 2 Technology: CMOS Mounting: SMD Case: SO14 Supply voltage: 1.65...5.5V DC Operating temperature: -40...150°C Kind of package: reel; tape Kind of output: push-pull Family: LVC |
Produkt ist nicht verfügbar |
||||||||||||
| 74LVC08AT14-13 | DIODES INCORPORATED |
Category: Gates, inverters Description: IC: digital; AND; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 1.65÷5.5VDC; LVC Type of integrated circuit: digital Kind of gate: AND Number of channels: 4 Number of inputs: 2 Technology: CMOS Mounting: SMD Case: TSSOP14 Supply voltage: 1.65...5.5V DC Operating temperature: -40...150°C Kind of package: reel; tape Kind of output: push-pull Family: LVC |
Produkt ist nicht verfügbar |
||||||||||||
| 74AUP1G14SE-7 | DIODES INCORPORATED |
Category: Gates, inverters Description: IC: digital; inverter; Ch: 1; IN: 1; CMOS; SMD; SOT353; 0.8÷3.6VDC Mounting: SMD Kind of package: reel; tape Case: SOT353 Type of integrated circuit: digital Number of channels: 1 Kind of output: push-pull Supply voltage: 0.8...3.6V DC Number of inputs: 1 Operating temperature: -40...150°C Kind of input: with Schmitt trigger Technology: CMOS Kind of integrated circuit: inverter Family: AUP |
Produkt ist nicht verfügbar |
||||||||||||
| MBRD20100CT-13 | DIODES INCORPORATED |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 100V; 10Ax2; TO252/DPAK; reel Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 100V Load current: 10A x2 Semiconductor structure: common cathode; double Max. forward voltage: 0.84V Case: TO252/DPAK Kind of package: reel Max. forward impulse current: 150A |
Produkt ist nicht verfügbar |
||||||||||||
 |
SMAJ75CA-13-F | DIODES INCORPORATED |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 400W; 83.3÷92.1V; 3.3A; bidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 75V Breakdown voltage: 83.3...92.1V Max. forward impulse current: 3.3A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
Produkt ist nicht verfügbar |
|||||||||||
 |
SMBJ12CA-13-F | DIODES INCORPORATED |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 600W; 13.3÷15.3V; 30.2A; bidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 12V Breakdown voltage: 13.3...15.3V Max. forward impulse current: 30.2A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
auf Bestellung 3180 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||
|
|
SMBJ14CA-13-F | DIODES INCORPORATED |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 600W; 15.6÷17.9V; 25.8A; bidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 14V Breakdown voltage: 15.6...17.9V Max. forward impulse current: 25.8A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
auf Bestellung 50 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||
 |
HD01-T | DIODES INCORPORATED |
Category: SMD/THT sing. phase diode bridge rectif. Description: Bridge rectifier: single-phase; 100V; If: 0.8A; Ifsm: 30A; MiniDIP Type of bridge rectifier: single-phase Max. off-state voltage: 100V Load current: 0.8A Max. forward impulse current: 30A Electrical mounting: SMT Case: MiniDIP Kind of package: reel; tape |
auf Bestellung 10013 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||
 |
DMC2004DWK-7 | DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V Type of transistor: N/P-MOSFET Polarisation: unipolar Kind of transistor: complementary pair Drain-source voltage: 20/-20V Drain current: 0.43/-0.54A Power dissipation: 0.25W Case: SOT363 Gate-source voltage: ±8V On-state resistance: 0.55/0.9Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
auf Bestellung 2021 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||
| DMC2004LPK-7 | DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V Type of transistor: N/P-MOSFET Polarisation: unipolar Kind of transistor: complementary pair Drain-source voltage: 20/-20V Drain current: 0.6/-0.75A Power dissipation: 0.5W Case: X1-DFN1612-6 Gate-source voltage: ±8V On-state resistance: 0.55/0.9Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
Produkt ist nicht verfügbar |
||||||||||||
|
|
DMC2004VK-7 | DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V Type of transistor: N/P-MOSFET Polarisation: unipolar Kind of transistor: complementary pair Drain-source voltage: 20/-20V Drain current: 0.53/-0.67A Power dissipation: 0.4W Case: SOT563 Gate-source voltage: ±8V On-state resistance: 0.55/0.9Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
Produkt ist nicht verfügbar |
|||||||||||
|
|
DMC2038LVT-7 | DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V Type of transistor: N/P-MOSFET Polarisation: unipolar Kind of transistor: complementary pair Drain-source voltage: 20/-20V Drain current: 3.1/-4.5A Power dissipation: 1.1W Case: TSOT26 Gate-source voltage: ±12V On-state resistance: 0.035/0.074Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
auf Bestellung 1705 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||
|
|
DMC2038LVTQ-7 | DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V Type of transistor: N/P-MOSFET Polarisation: unipolar Kind of transistor: complementary pair Drain-source voltage: 20/-20V Drain current: 3/-2.1A Power dissipation: 0.5W Case: TSOT26 Gate-source voltage: ±12V On-state resistance: 0.056/0.168Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||
 |
FZT1051ATA | DIODES INCORPORATED |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 40V; 5A; 1.2W; SOT223 Mounting: SMD Kind of package: reel; tape Case: SOT223 Power dissipation: 1.2W Polarisation: bipolar Frequency: 155MHz Collector-emitter voltage: 40V Current gain: 270...1200 Collector current: 5A Type of transistor: NPN |
Produkt ist nicht verfügbar |
|||||||||||
| ZDT1053TA | DIODES INCORPORATED |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 75V; 5A; 2.75W; SM8 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 75V Collector current: 5A Power dissipation: 2.75W Case: SM8 Pulsed collector current: 20A Current gain: 300 Mounting: SMD Kind of package: reel; tape Frequency: 140MHz |
Produkt ist nicht verfügbar |
||||||||||||
|
|
BAT54AWQ-7-F | DIODES INCORPORATED |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 30V; 0.2A; SOT323; 5ns; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: common anode; double Capacitance: 10pF Case: SOT323 Max. forward voltage: 1V Leakage current: 2µA Max. forward impulse current: 0.6A Reverse recovery time: 5ns Kind of package: reel; tape Power dissipation: 0.2W Application: automotive industry |
Produkt ist nicht verfügbar |
|||||||||||
|
|
ZTL431AQFTA | DIODES INCORPORATED |
Category: Reference voltage sources - circuits Description: IC: voltage reference source; 2.5V; ±1%; SOT23; reel,tape; 100mA Type of integrated circuit: voltage reference source Reference voltage: 2.5V Tolerance: ±1% Mounting: SMD Case: SOT23 Operating temperature: -40...125°C Kind of package: reel; tape Maximum output current: 0.1A Application: automotive industry Operating voltage: 2.5...20V |
auf Bestellung 2235 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||
| DMN6013LFG-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 8.3A; Idm: 58.3A; 2.1W Kind of package: reel; tape Mounting: SMD Case: PowerDI3333-8 Drain-source voltage: 60V Drain current: 8.3A On-state resistance: 18mΩ Type of transistor: N-MOSFET Power dissipation: 2.1W Polarisation: unipolar Gate charge: 55.4nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 58.3A |
Produkt ist nicht verfügbar |
||||||||||||
| DMN6013LFGQ-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 8.3A; Idm: 58.3A; 2.1W Kind of package: reel; tape Mounting: SMD Case: PowerDI3333-8 Drain-source voltage: 60V Drain current: 8.3A On-state resistance: 18mΩ Type of transistor: N-MOSFET Application: automotive industry Power dissipation: 2.1W Polarisation: unipolar Gate charge: 55.4nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 58.3A |
Produkt ist nicht verfügbar |
||||||||||||
| DMN6013LFGQ-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 8.3A; Idm: 58.3A; 2.1W Kind of package: reel; tape Mounting: SMD Case: PowerDI3333-8 Drain-source voltage: 60V Drain current: 8.3A On-state resistance: 18mΩ Type of transistor: N-MOSFET Application: automotive industry Power dissipation: 2.1W Polarisation: unipolar Gate charge: 55.4nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 58.3A |
Produkt ist nicht verfügbar |
||||||||||||
| SBR6200CTL-13 | DIODES INCORPORATED |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SBR®; SMD; 200V; 3Ax2; DPAK; reel,tape Type of diode: Schottky rectifying Technology: SBR® Mounting: SMD Max. off-state voltage: 200V Load current: 3A x2 Semiconductor structure: common cathode; double Case: DPAK Kind of package: reel; tape Max. forward impulse current: 80A Max. forward voltage: 0.85V |
Produkt ist nicht verfügbar |
||||||||||||
|
|
1SMB5931B-13 | DIODES INCORPORATED |
Category: SMD Zener diodes Description: Diode: Zener; 3W; 18V; SMD; reel,tape; SMB; single diode; 1uA Type of diode: Zener Power dissipation: 3W Zener voltage: 18V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SMB Semiconductor structure: single diode Leakage current: 1µA |
Produkt ist nicht verfügbar |
|||||||||||
|
|
1SMB5932B-13 | DIODES INCORPORATED |
Category: SMD Zener diodes Description: Diode: Zener; 3W; 20V; SMD; reel,tape; SMB; single diode; 1uA Type of diode: Zener Power dissipation: 3W Zener voltage: 20V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SMB Semiconductor structure: single diode Leakage current: 1µA |
Produkt ist nicht verfügbar |
|||||||||||
|
|
1SMB5933B-13 | DIODES INCORPORATED |
Category: SMD Zener diodes Description: Diode: Zener; 3W; 22V; SMD; reel,tape; SMB; single diode; 1uA Type of diode: Zener Power dissipation: 3W Zener voltage: 22V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SMB Semiconductor structure: single diode Leakage current: 1µA |
Produkt ist nicht verfügbar |
|||||||||||
|
|
1SMB5934B-13 | DIODES INCORPORATED |
Category: SMD Zener diodes Description: Diode: Zener; 3W; 24V; SMD; reel,tape; SMB; single diode; 1uA Type of diode: Zener Power dissipation: 3W Zener voltage: 24V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SMB Semiconductor structure: single diode Leakage current: 1µA |
Produkt ist nicht verfügbar |
|||||||||||
|
|
1SMB5935B-13 | DIODES INCORPORATED |
Category: SMD Zener diodes Description: Diode: Zener; 3W; 27V; SMD; reel,tape; SMB; single diode; 1uA Type of diode: Zener Power dissipation: 3W Zener voltage: 27V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SMB Semiconductor structure: single diode Leakage current: 1µA |
Produkt ist nicht verfügbar |
|||||||||||
| 1SMB5937B-13 | DIODES INCORPORATED |
Category: SMD Zener diodes Description: Diode: Zener; 3W; 33V; SMD; reel,tape; SMB; single diode; 1uA Type of diode: Zener Power dissipation: 3W Zener voltage: 33V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SMB Semiconductor structure: single diode Leakage current: 1µA |
Produkt ist nicht verfügbar |
||||||||||||
|
|
1SMB5938B-13 | DIODES INCORPORATED |
Category: SMD Zener diodes Description: Diode: Zener; 3W; 36V; SMD; reel,tape; SMB; single diode; 1uA Type of diode: Zener Power dissipation: 3W Zener voltage: 36V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SMB Semiconductor structure: single diode Leakage current: 1µA |
Produkt ist nicht verfügbar |
|||||||||||
|
|
1SMB5939B-13 | DIODES INCORPORATED |
Category: SMD Zener diodes Description: Diode: Zener; 3W; 39V; SMD; reel,tape; SMB; single diode; 1uA Type of diode: Zener Power dissipation: 3W Zener voltage: 39V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SMB Semiconductor structure: single diode Leakage current: 1µA |
Produkt ist nicht verfügbar |
|||||||||||
|
|
1SMB5941B-13 | DIODES INCORPORATED |
Category: SMD Zener diodes Description: Diode: Zener; 3W; 47V; SMD; reel,tape; SMB; single diode; 1uA Type of diode: Zener Power dissipation: 3W Zener voltage: 47V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SMB Semiconductor structure: single diode Leakage current: 1µA |
Produkt ist nicht verfügbar |
|||||||||||
|
|
1SMB5942B-13 | DIODES INCORPORATED |
Category: SMD Zener diodes Description: Diode: Zener; 3W; 51V; SMD; reel,tape; SMB; single diode; 1uA Type of diode: Zener Power dissipation: 3W Zener voltage: 51V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SMB Semiconductor structure: single diode Leakage current: 1µA |
Produkt ist nicht verfügbar |
|||||||||||
|
|
1SMB5943B-13 | DIODES INCORPORATED |
Category: SMD Zener diodes Description: Diode: Zener; 3W; 56V; SMD; reel,tape; SMB; single diode; 1uA Type of diode: Zener Power dissipation: 3W Zener voltage: 56V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SMB Semiconductor structure: single diode Leakage current: 1µA |
Produkt ist nicht verfügbar |
|||||||||||
|
|
1SMB5944B-13 | DIODES INCORPORATED |
Category: SMD Zener diodes Description: Diode: Zener; 3W; 62V; SMD; reel,tape; SMB; single diode; 1uA Type of diode: Zener Power dissipation: 3W Zener voltage: 62V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SMB Semiconductor structure: single diode Leakage current: 1µA |
Produkt ist nicht verfügbar |
|||||||||||
|
|
1SMB5945B-13 | DIODES INCORPORATED |
Category: SMD Zener diodes Description: Diode: Zener; 3W; 68V; SMD; reel,tape; SMB; single diode; 1uA Type of diode: Zener Power dissipation: 3W Zener voltage: 68V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SMB Semiconductor structure: single diode Leakage current: 1µA |
Produkt ist nicht verfügbar |
|||||||||||
|
|
1SMB5946B-13 | DIODES INCORPORATED |
Category: SMD Zener diodes Description: Diode: Zener; 3W; 75V; SMD; reel,tape; SMB; single diode; 1uA Type of diode: Zener Power dissipation: 3W Zener voltage: 75V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SMB Semiconductor structure: single diode Leakage current: 1µA |
Produkt ist nicht verfügbar |
| DMN6040SK3-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 13A; Idm: 30A; 17W; TO252
Kind of package: reel; tape
Mounting: SMD
Case: TO252
Drain-source voltage: 60V
Drain current: 13A
On-state resistance: 50mΩ
Type of transistor: N-MOSFET
Power dissipation: 17W
Polarisation: unipolar
Gate charge: 22.4nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 30A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 13A; Idm: 30A; 17W; TO252
Kind of package: reel; tape
Mounting: SMD
Case: TO252
Drain-source voltage: 60V
Drain current: 13A
On-state resistance: 50mΩ
Type of transistor: N-MOSFET
Power dissipation: 17W
Polarisation: unipolar
Gate charge: 22.4nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 30A
Produkt ist nicht verfügbar
| DMN6040SK3Q-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 13A; Idm: 30A; 17W; TO252
Kind of package: reel; tape
Mounting: SMD
Case: TO252
Drain-source voltage: 60V
Drain current: 13A
On-state resistance: 50mΩ
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 17W
Polarisation: unipolar
Gate charge: 22.4nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 30A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 13A; Idm: 30A; 17W; TO252
Kind of package: reel; tape
Mounting: SMD
Case: TO252
Drain-source voltage: 60V
Drain current: 13A
On-state resistance: 50mΩ
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 17W
Polarisation: unipolar
Gate charge: 22.4nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 30A
Produkt ist nicht verfügbar
| DMN6040SSD-13 |
|
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 4.1A; 0.8W; SO8
Kind of package: reel; tape
Mounting: SMD
Case: SO8
Drain-source voltage: 60V
Drain current: 4.1A
On-state resistance: 55mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 0.8W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 4.1A; 0.8W; SO8
Kind of package: reel; tape
Mounting: SMD
Case: SO8
Drain-source voltage: 60V
Drain current: 4.1A
On-state resistance: 55mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 0.8W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
auf Bestellung 1572 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 125+ | 0.57 EUR |
| 170+ | 0.42 EUR |
| 268+ | 0.27 EUR |
| 283+ | 0.25 EUR |
| DMN6040SSDQ-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 5.3A; Idm: 30A; 1.1W; SO8
Kind of package: reel; tape
Mounting: SMD
Case: SO8
Drain-source voltage: 60V
Drain current: 5.3A
On-state resistance: 55mΩ
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 1.1W
Polarisation: unipolar
Gate charge: 22.4nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 30A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 5.3A; Idm: 30A; 1.1W; SO8
Kind of package: reel; tape
Mounting: SMD
Case: SO8
Drain-source voltage: 60V
Drain current: 5.3A
On-state resistance: 55mΩ
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 1.1W
Polarisation: unipolar
Gate charge: 22.4nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 30A
Produkt ist nicht verfügbar
| DMN6040SSDQ13 |
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 4.1A; Idm: 30A; 0.8W; SO8
Kind of package: reel; tape
Mounting: SMD
Case: SO8
Drain-source voltage: 60V
Drain current: 4.1A
On-state resistance: 55mΩ
Type of transistor: N-MOSFET x2
Application: automotive industry
Power dissipation: 0.8W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 30A
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 4.1A; Idm: 30A; 0.8W; SO8
Kind of package: reel; tape
Mounting: SMD
Case: SO8
Drain-source voltage: 60V
Drain current: 4.1A
On-state resistance: 55mΩ
Type of transistor: N-MOSFET x2
Application: automotive industry
Power dissipation: 0.8W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 30A
Produkt ist nicht verfügbar
| DMN6040SSS-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 4.4A; 1W; SO8
Kind of package: reel; tape
Mounting: SMD
Case: SO8
Drain-source voltage: 60V
Drain current: 4.4A
On-state resistance: 55mΩ
Type of transistor: N-MOSFET
Power dissipation: 1W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 4.4A; 1W; SO8
Kind of package: reel; tape
Mounting: SMD
Case: SO8
Drain-source voltage: 60V
Drain current: 4.4A
On-state resistance: 55mΩ
Type of transistor: N-MOSFET
Power dissipation: 1W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
auf Bestellung 4382 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 175+ | 0.41 EUR |
| 253+ | 0.28 EUR |
| 326+ | 0.22 EUR |
| 345+ | 0.21 EUR |
| 2500+ | 0.2 EUR |
| DMN6040SVT-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 5A; Idm: 30A; 1.1W; TSOT26
Kind of package: reel; tape
Mounting: SMD
Case: TSOT26
Drain-source voltage: 60V
Drain current: 5A
On-state resistance: 60mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.1W
Polarisation: unipolar
Gate charge: 22.4nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 30A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 5A; Idm: 30A; 1.1W; TSOT26
Kind of package: reel; tape
Mounting: SMD
Case: TSOT26
Drain-source voltage: 60V
Drain current: 5A
On-state resistance: 60mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.1W
Polarisation: unipolar
Gate charge: 22.4nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 30A
Produkt ist nicht verfügbar
| DMN6040SVTQ-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 5A; Idm: 30A; 1.1W; TSOT26
Kind of package: reel; tape
Mounting: SMD
Case: TSOT26
Drain-source voltage: 60V
Drain current: 5A
On-state resistance: 60mΩ
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 1.1W
Polarisation: unipolar
Gate charge: 22.4nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 30A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 5A; Idm: 30A; 1.1W; TSOT26
Kind of package: reel; tape
Mounting: SMD
Case: TSOT26
Drain-source voltage: 60V
Drain current: 5A
On-state resistance: 60mΩ
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 1.1W
Polarisation: unipolar
Gate charge: 22.4nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 30A
Produkt ist nicht verfügbar
| DMN6040SVTQ-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 5A; Idm: 30A; 1.1W; TSOT26
Kind of package: reel; tape
Mounting: SMD
Case: TSOT26
Drain-source voltage: 60V
Drain current: 5A
On-state resistance: 60mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.1W
Polarisation: unipolar
Gate charge: 22.4nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 30A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 5A; Idm: 30A; 1.1W; TSOT26
Kind of package: reel; tape
Mounting: SMD
Case: TSOT26
Drain-source voltage: 60V
Drain current: 5A
On-state resistance: 60mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.1W
Polarisation: unipolar
Gate charge: 22.4nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 30A
Produkt ist nicht verfügbar
| DMP2065UFDB-7 |
|
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -3.2A; 0.74W; U-DFN2020-6
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.2A
Power dissipation: 0.74W
Case: U-DFN2020-6
Gate-source voltage: ±12V
On-state resistance: 0.1Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -3.2A; 0.74W; U-DFN2020-6
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.2A
Power dissipation: 0.74W
Case: U-DFN2020-6
Gate-source voltage: ±12V
On-state resistance: 0.1Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| DMP2240UDM-7 |
|
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -1.5A; 0.6W; SOT26
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.5A
Power dissipation: 0.6W
Case: SOT26
Gate-source voltage: ±12V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -1.5A; 0.6W; SOT26
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.5A
Power dissipation: 0.6W
Case: SOT26
Gate-source voltage: ±12V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 6972 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 152+ | 0.47 EUR |
| 184+ | 0.39 EUR |
| 295+ | 0.24 EUR |
| 313+ | 0.23 EUR |
| DMP22D5UDJ-7A |
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -290mA; Idm: -1.1A; 380mW
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -290mA
Pulsed drain current: -1.1A
Power dissipation: 0.38W
Case: SOT963
Gate-source voltage: ±8V
On-state resistance: 5Ω
Mounting: SMD
Gate charge: 300pC
Kind of package: reel; tape
Kind of channel: enhanced
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -290mA; Idm: -1.1A; 380mW
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -290mA
Pulsed drain current: -1.1A
Power dissipation: 0.38W
Case: SOT963
Gate-source voltage: ±8V
On-state resistance: 5Ω
Mounting: SMD
Gate charge: 300pC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| DMP2900UV-13 |
|
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -680mA; Idm: -2.5A; 800mW
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -0.68A
Pulsed drain current: -2.5A
Power dissipation: 0.8W
Case: SOT563
Gate-source voltage: ±6V
On-state resistance: 25Ω
Mounting: SMD
Gate charge: 0.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -680mA; Idm: -2.5A; 800mW
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -0.68A
Pulsed drain current: -2.5A
Power dissipation: 0.8W
Case: SOT563
Gate-source voltage: ±6V
On-state resistance: 25Ω
Mounting: SMD
Gate charge: 0.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| DMP2900UV-7 |
|
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -680mA; Idm: -2.5A; 800mW
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -0.68A
Pulsed drain current: -2.5A
Power dissipation: 0.8W
Case: SOT563
Gate-source voltage: ±6V
On-state resistance: 25Ω
Mounting: SMD
Gate charge: 0.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -680mA; Idm: -2.5A; 800mW
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -0.68A
Pulsed drain current: -2.5A
Power dissipation: 0.8W
Case: SOT563
Gate-source voltage: ±6V
On-state resistance: 25Ω
Mounting: SMD
Gate charge: 0.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| DMP3098LSD-13 |
|
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -3.3A; Idm: -15A; 1.8W; SO8
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.3A
Pulsed drain current: -15A
Power dissipation: 1.8W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 65mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -3.3A; Idm: -15A; 1.8W; SO8
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.3A
Pulsed drain current: -15A
Power dissipation: 1.8W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 65mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| DMP3165SVT-7 |
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -2.2A; Idm: -15A; 0.88W
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -2.2A
Pulsed drain current: -15A
Power dissipation: 0.88W
Case: TSOT26
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: SMD
Gate charge: 6.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -2.2A; Idm: -15A; 0.88W
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -2.2A
Pulsed drain current: -15A
Power dissipation: 0.88W
Case: TSOT26
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: SMD
Gate charge: 6.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| DMP4050SSD-13 |
|
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -40V; -4A; Idm: -20A; 1.25W; SO8
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -4A
Pulsed drain current: -20A
Power dissipation: 1.25W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 79mΩ
Mounting: SMD
Gate charge: 13.9nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -40V; -4A; Idm: -20A; 1.25W; SO8
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -4A
Pulsed drain current: -20A
Power dissipation: 1.25W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 79mΩ
Mounting: SMD
Gate charge: 13.9nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| DMP4050SSDQ-13 |
|
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -40V; -4.1A; 1.25W; SO8
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -4.1A
Power dissipation: 1.25W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 79mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -40V; -4.1A; 1.25W; SO8
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -4.1A
Power dissipation: 1.25W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 79mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Produkt ist nicht verfügbar
| DMP58D0SV-7 |
|
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -50V; -0.16A; 0.4W; SOT563
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -0.16A
Power dissipation: 0.4W
Case: SOT563
Gate-source voltage: ±20V
On-state resistance: 8Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -50V; -0.16A; 0.4W; SOT563
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -0.16A
Power dissipation: 0.4W
Case: SOT563
Gate-source voltage: ±20V
On-state resistance: 8Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Produkt ist nicht verfügbar
| DMPH6050SSD-13 |
|
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -60V; -4.7A; 1.5W; SO8
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -4.7A
Power dissipation: 1.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -60V; -4.7A; 1.5W; SO8
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -4.7A
Power dissipation: 1.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| SDT3045VCT |
|
Hersteller: DIODES INCORPORATED
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 15Ax2; TO220AB; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 15A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.5V
Case: TO220AB
Kind of package: tube
Leakage current: 100mA
Max. forward impulse current: 250A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 15Ax2; TO220AB; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 15A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.5V
Case: TO220AB
Kind of package: tube
Leakage current: 100mA
Max. forward impulse current: 250A
Produkt ist nicht verfügbar
| SDT3060VCT |
|
Hersteller: DIODES INCORPORATED
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 15Ax2; TO220AB; tube; Ir: 50mA
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 15A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.6V
Case: TO220AB
Kind of package: tube
Leakage current: 50mA
Max. forward impulse current: 200A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 15Ax2; TO220AB; tube; Ir: 50mA
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 15A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.6V
Case: TO220AB
Kind of package: tube
Leakage current: 50mA
Max. forward impulse current: 200A
auf Bestellung 228 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 66+ | 1.09 EUR |
| 90+ | 0.8 EUR |
| 119+ | 0.6 EUR |
| 145+ | 0.49 EUR |
| 154+ | 0.47 EUR |
| MBRB10200CT-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 200V; 5Ax2; D2PAK; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 5A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.91V
Case: D2PAK
Kind of package: reel; tape
Leakage current: 10mA
Max. forward impulse current: 110A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 200V; 5Ax2; D2PAK; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 5A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.91V
Case: D2PAK
Kind of package: reel; tape
Leakage current: 10mA
Max. forward impulse current: 110A
Produkt ist nicht verfügbar
| ZXRE125DFTA |
|
Hersteller: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 1.22V; ±1%; SOT23; reel,tape; 10mA
Type of integrated circuit: voltage reference source
Reference voltage: 1.22V
Tolerance: ±1%
Mounting: SMD
Case: SOT23
Operating temperature: -40...85°C
Kind of package: reel; tape
Maximum output current: 10mA
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 1.22V; ±1%; SOT23; reel,tape; 10mA
Type of integrated circuit: voltage reference source
Reference voltage: 1.22V
Tolerance: ±1%
Mounting: SMD
Case: SOT23
Operating temperature: -40...85°C
Kind of package: reel; tape
Maximum output current: 10mA
Produkt ist nicht verfügbar
| 74LVC06AT14-13 |
|
Hersteller: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; inverter; Ch: 6; CMOS; SMD; TSSOP14; 1.65÷5.5VDC; LVC
Type of integrated circuit: digital
Kind of integrated circuit: inverter
Number of channels: 6
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of output: open drain
Kind of package: reel; tape
Family: LVC
Category: Buffers, transceivers, drivers
Description: IC: digital; inverter; Ch: 6; CMOS; SMD; TSSOP14; 1.65÷5.5VDC; LVC
Type of integrated circuit: digital
Kind of integrated circuit: inverter
Number of channels: 6
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of output: open drain
Kind of package: reel; tape
Family: LVC
Produkt ist nicht verfügbar
| 74LVC08AS14-13 |
|
Hersteller: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; CMOS; SMD; SO14; 1.65÷5.5VDC; -40÷150°C
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of output: push-pull
Family: LVC
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; CMOS; SMD; SO14; 1.65÷5.5VDC; -40÷150°C
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of output: push-pull
Family: LVC
Produkt ist nicht verfügbar
| 74LVC08AT14-13 |
|
Hersteller: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 1.65÷5.5VDC; LVC
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of output: push-pull
Family: LVC
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 1.65÷5.5VDC; LVC
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of output: push-pull
Family: LVC
Produkt ist nicht verfügbar
| 74AUP1G14SE-7 |
|
Hersteller: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; inverter; Ch: 1; IN: 1; CMOS; SMD; SOT353; 0.8÷3.6VDC
Mounting: SMD
Kind of package: reel; tape
Case: SOT353
Type of integrated circuit: digital
Number of channels: 1
Kind of output: push-pull
Supply voltage: 0.8...3.6V DC
Number of inputs: 1
Operating temperature: -40...150°C
Kind of input: with Schmitt trigger
Technology: CMOS
Kind of integrated circuit: inverter
Family: AUP
Category: Gates, inverters
Description: IC: digital; inverter; Ch: 1; IN: 1; CMOS; SMD; SOT353; 0.8÷3.6VDC
Mounting: SMD
Kind of package: reel; tape
Case: SOT353
Type of integrated circuit: digital
Number of channels: 1
Kind of output: push-pull
Supply voltage: 0.8...3.6V DC
Number of inputs: 1
Operating temperature: -40...150°C
Kind of input: with Schmitt trigger
Technology: CMOS
Kind of integrated circuit: inverter
Family: AUP
Produkt ist nicht verfügbar
| MBRD20100CT-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 100V; 10Ax2; TO252/DPAK; reel
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.84V
Case: TO252/DPAK
Kind of package: reel
Max. forward impulse current: 150A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 100V; 10Ax2; TO252/DPAK; reel
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.84V
Case: TO252/DPAK
Kind of package: reel
Max. forward impulse current: 150A
Produkt ist nicht verfügbar
| SMAJ75CA-13-F |
|
Hersteller: DIODES INCORPORATED
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 400W; 83.3÷92.1V; 3.3A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 75V
Breakdown voltage: 83.3...92.1V
Max. forward impulse current: 3.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 400W; 83.3÷92.1V; 3.3A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 75V
Breakdown voltage: 83.3...92.1V
Max. forward impulse current: 3.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
| SMBJ12CA-13-F |
|
Hersteller: DIODES INCORPORATED
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 13.3÷15.3V; 30.2A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 12V
Breakdown voltage: 13.3...15.3V
Max. forward impulse current: 30.2A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 13.3÷15.3V; 30.2A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 12V
Breakdown voltage: 13.3...15.3V
Max. forward impulse current: 30.2A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 3180 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 173+ | 0.41 EUR |
| 234+ | 0.31 EUR |
| 368+ | 0.19 EUR |
| 674+ | 0.11 EUR |
| 712+ | 0.1 EUR |
| SMBJ14CA-13-F |
|
Hersteller: DIODES INCORPORATED
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 15.6÷17.9V; 25.8A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 14V
Breakdown voltage: 15.6...17.9V
Max. forward impulse current: 25.8A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 15.6÷17.9V; 25.8A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 14V
Breakdown voltage: 15.6...17.9V
Max. forward impulse current: 25.8A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 50 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 50+ | 1.43 EUR |
| HD01-T |
Hersteller: DIODES INCORPORATED
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 100V; If: 0.8A; Ifsm: 30A; MiniDIP
Type of bridge rectifier: single-phase
Max. off-state voltage: 100V
Load current: 0.8A
Max. forward impulse current: 30A
Electrical mounting: SMT
Case: MiniDIP
Kind of package: reel; tape
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 100V; If: 0.8A; Ifsm: 30A; MiniDIP
Type of bridge rectifier: single-phase
Max. off-state voltage: 100V
Load current: 0.8A
Max. forward impulse current: 30A
Electrical mounting: SMT
Case: MiniDIP
Kind of package: reel; tape
auf Bestellung 10013 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 139+ | 0.51 EUR |
| 184+ | 0.39 EUR |
| 298+ | 0.24 EUR |
| 439+ | 0.16 EUR |
| 463+ | 0.15 EUR |
| DMC2004DWK-7 |
|
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 20/-20V
Drain current: 0.43/-0.54A
Power dissipation: 0.25W
Case: SOT363
Gate-source voltage: ±8V
On-state resistance: 0.55/0.9Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 20/-20V
Drain current: 0.43/-0.54A
Power dissipation: 0.25W
Case: SOT363
Gate-source voltage: ±8V
On-state resistance: 0.55/0.9Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
auf Bestellung 2021 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 173+ | 0.41 EUR |
| 269+ | 0.27 EUR |
| 329+ | 0.22 EUR |
| 348+ | 0.21 EUR |
| DMC2004LPK-7 |
|
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 20/-20V
Drain current: 0.6/-0.75A
Power dissipation: 0.5W
Case: X1-DFN1612-6
Gate-source voltage: ±8V
On-state resistance: 0.55/0.9Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 20/-20V
Drain current: 0.6/-0.75A
Power dissipation: 0.5W
Case: X1-DFN1612-6
Gate-source voltage: ±8V
On-state resistance: 0.55/0.9Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Produkt ist nicht verfügbar
| DMC2004VK-7 |
|
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 20/-20V
Drain current: 0.53/-0.67A
Power dissipation: 0.4W
Case: SOT563
Gate-source voltage: ±8V
On-state resistance: 0.55/0.9Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 20/-20V
Drain current: 0.53/-0.67A
Power dissipation: 0.4W
Case: SOT563
Gate-source voltage: ±8V
On-state resistance: 0.55/0.9Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Produkt ist nicht verfügbar
| DMC2038LVT-7 |
|
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 20/-20V
Drain current: 3.1/-4.5A
Power dissipation: 1.1W
Case: TSOT26
Gate-source voltage: ±12V
On-state resistance: 0.035/0.074Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 20/-20V
Drain current: 3.1/-4.5A
Power dissipation: 1.1W
Case: TSOT26
Gate-source voltage: ±12V
On-state resistance: 0.035/0.074Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 1705 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 355+ | 0.2 EUR |
| 475+ | 0.15 EUR |
| 560+ | 0.13 EUR |
| 605+ | 0.12 EUR |
| 635+ | 0.11 EUR |
| DMC2038LVTQ-7 |
|
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 20/-20V
Drain current: 3/-2.1A
Power dissipation: 0.5W
Case: TSOT26
Gate-source voltage: ±12V
On-state resistance: 0.056/0.168Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 20/-20V
Drain current: 3/-2.1A
Power dissipation: 0.5W
Case: TSOT26
Gate-source voltage: ±12V
On-state resistance: 0.056/0.168Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 169+ | 0.42 EUR |
| 321+ | 0.22 EUR |
| 414+ | 0.17 EUR |
| 439+ | 0.16 EUR |
| FZT1051ATA |
|
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 5A; 1.2W; SOT223
Mounting: SMD
Kind of package: reel; tape
Case: SOT223
Power dissipation: 1.2W
Polarisation: bipolar
Frequency: 155MHz
Collector-emitter voltage: 40V
Current gain: 270...1200
Collector current: 5A
Type of transistor: NPN
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 5A; 1.2W; SOT223
Mounting: SMD
Kind of package: reel; tape
Case: SOT223
Power dissipation: 1.2W
Polarisation: bipolar
Frequency: 155MHz
Collector-emitter voltage: 40V
Current gain: 270...1200
Collector current: 5A
Type of transistor: NPN
Produkt ist nicht verfügbar
| ZDT1053TA |
|
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 75V; 5A; 2.75W; SM8
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 75V
Collector current: 5A
Power dissipation: 2.75W
Case: SM8
Pulsed collector current: 20A
Current gain: 300
Mounting: SMD
Kind of package: reel; tape
Frequency: 140MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 75V; 5A; 2.75W; SM8
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 75V
Collector current: 5A
Power dissipation: 2.75W
Case: SM8
Pulsed collector current: 20A
Current gain: 300
Mounting: SMD
Kind of package: reel; tape
Frequency: 140MHz
Produkt ist nicht verfügbar
| BAT54AWQ-7-F |
|
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 0.2A; SOT323; 5ns; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common anode; double
Capacitance: 10pF
Case: SOT323
Max. forward voltage: 1V
Leakage current: 2µA
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.2W
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 0.2A; SOT323; 5ns; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common anode; double
Capacitance: 10pF
Case: SOT323
Max. forward voltage: 1V
Leakage current: 2µA
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.2W
Application: automotive industry
Produkt ist nicht verfügbar
| ZTL431AQFTA |
|
Hersteller: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±1%; SOT23; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Tolerance: ±1%
Mounting: SMD
Case: SOT23
Operating temperature: -40...125°C
Kind of package: reel; tape
Maximum output current: 0.1A
Application: automotive industry
Operating voltage: 2.5...20V
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±1%; SOT23; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Tolerance: ±1%
Mounting: SMD
Case: SOT23
Operating temperature: -40...125°C
Kind of package: reel; tape
Maximum output current: 0.1A
Application: automotive industry
Operating voltage: 2.5...20V
auf Bestellung 2235 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 290+ | 0.25 EUR |
| 340+ | 0.21 EUR |
| 420+ | 0.17 EUR |
| 445+ | 0.16 EUR |
| DMN6013LFG-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8.3A; Idm: 58.3A; 2.1W
Kind of package: reel; tape
Mounting: SMD
Case: PowerDI3333-8
Drain-source voltage: 60V
Drain current: 8.3A
On-state resistance: 18mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.1W
Polarisation: unipolar
Gate charge: 55.4nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 58.3A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8.3A; Idm: 58.3A; 2.1W
Kind of package: reel; tape
Mounting: SMD
Case: PowerDI3333-8
Drain-source voltage: 60V
Drain current: 8.3A
On-state resistance: 18mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.1W
Polarisation: unipolar
Gate charge: 55.4nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 58.3A
Produkt ist nicht verfügbar
| DMN6013LFGQ-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8.3A; Idm: 58.3A; 2.1W
Kind of package: reel; tape
Mounting: SMD
Case: PowerDI3333-8
Drain-source voltage: 60V
Drain current: 8.3A
On-state resistance: 18mΩ
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 2.1W
Polarisation: unipolar
Gate charge: 55.4nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 58.3A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8.3A; Idm: 58.3A; 2.1W
Kind of package: reel; tape
Mounting: SMD
Case: PowerDI3333-8
Drain-source voltage: 60V
Drain current: 8.3A
On-state resistance: 18mΩ
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 2.1W
Polarisation: unipolar
Gate charge: 55.4nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 58.3A
Produkt ist nicht verfügbar
| DMN6013LFGQ-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8.3A; Idm: 58.3A; 2.1W
Kind of package: reel; tape
Mounting: SMD
Case: PowerDI3333-8
Drain-source voltage: 60V
Drain current: 8.3A
On-state resistance: 18mΩ
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 2.1W
Polarisation: unipolar
Gate charge: 55.4nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 58.3A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8.3A; Idm: 58.3A; 2.1W
Kind of package: reel; tape
Mounting: SMD
Case: PowerDI3333-8
Drain-source voltage: 60V
Drain current: 8.3A
On-state resistance: 18mΩ
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 2.1W
Polarisation: unipolar
Gate charge: 55.4nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 58.3A
Produkt ist nicht verfügbar
| SBR6200CTL-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SBR®; SMD; 200V; 3Ax2; DPAK; reel,tape
Type of diode: Schottky rectifying
Technology: SBR®
Mounting: SMD
Max. off-state voltage: 200V
Load current: 3A x2
Semiconductor structure: common cathode; double
Case: DPAK
Kind of package: reel; tape
Max. forward impulse current: 80A
Max. forward voltage: 0.85V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SBR®; SMD; 200V; 3Ax2; DPAK; reel,tape
Type of diode: Schottky rectifying
Technology: SBR®
Mounting: SMD
Max. off-state voltage: 200V
Load current: 3A x2
Semiconductor structure: common cathode; double
Case: DPAK
Kind of package: reel; tape
Max. forward impulse current: 80A
Max. forward voltage: 0.85V
Produkt ist nicht verfügbar
| 1SMB5931B-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 18V; SMD; reel,tape; SMB; single diode; 1uA
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Leakage current: 1µA
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 18V; SMD; reel,tape; SMB; single diode; 1uA
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Leakage current: 1µA
Produkt ist nicht verfügbar
| 1SMB5932B-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 20V; SMD; reel,tape; SMB; single diode; 1uA
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 20V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Leakage current: 1µA
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 20V; SMD; reel,tape; SMB; single diode; 1uA
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 20V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Leakage current: 1µA
Produkt ist nicht verfügbar
| 1SMB5933B-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 22V; SMD; reel,tape; SMB; single diode; 1uA
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 22V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Leakage current: 1µA
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 22V; SMD; reel,tape; SMB; single diode; 1uA
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 22V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Leakage current: 1µA
Produkt ist nicht verfügbar
| 1SMB5934B-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 24V; SMD; reel,tape; SMB; single diode; 1uA
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 24V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Leakage current: 1µA
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 24V; SMD; reel,tape; SMB; single diode; 1uA
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 24V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Leakage current: 1µA
Produkt ist nicht verfügbar
| 1SMB5935B-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 27V; SMD; reel,tape; SMB; single diode; 1uA
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 27V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Leakage current: 1µA
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 27V; SMD; reel,tape; SMB; single diode; 1uA
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 27V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Leakage current: 1µA
Produkt ist nicht verfügbar
| 1SMB5937B-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 33V; SMD; reel,tape; SMB; single diode; 1uA
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 33V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Leakage current: 1µA
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 33V; SMD; reel,tape; SMB; single diode; 1uA
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 33V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Leakage current: 1µA
Produkt ist nicht verfügbar
| 1SMB5938B-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 36V; SMD; reel,tape; SMB; single diode; 1uA
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 36V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Leakage current: 1µA
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 36V; SMD; reel,tape; SMB; single diode; 1uA
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 36V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Leakage current: 1µA
Produkt ist nicht verfügbar
| 1SMB5939B-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 39V; SMD; reel,tape; SMB; single diode; 1uA
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 39V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Leakage current: 1µA
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 39V; SMD; reel,tape; SMB; single diode; 1uA
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 39V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Leakage current: 1µA
Produkt ist nicht verfügbar
| 1SMB5941B-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 47V; SMD; reel,tape; SMB; single diode; 1uA
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 47V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Leakage current: 1µA
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 47V; SMD; reel,tape; SMB; single diode; 1uA
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 47V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Leakage current: 1µA
Produkt ist nicht verfügbar
| 1SMB5942B-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 51V; SMD; reel,tape; SMB; single diode; 1uA
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 51V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Leakage current: 1µA
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 51V; SMD; reel,tape; SMB; single diode; 1uA
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 51V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Leakage current: 1µA
Produkt ist nicht verfügbar
| 1SMB5943B-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 56V; SMD; reel,tape; SMB; single diode; 1uA
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 56V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Leakage current: 1µA
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 56V; SMD; reel,tape; SMB; single diode; 1uA
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 56V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Leakage current: 1µA
Produkt ist nicht verfügbar
| 1SMB5944B-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 62V; SMD; reel,tape; SMB; single diode; 1uA
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 62V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Leakage current: 1µA
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 62V; SMD; reel,tape; SMB; single diode; 1uA
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 62V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Leakage current: 1µA
Produkt ist nicht verfügbar
| 1SMB5945B-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 68V; SMD; reel,tape; SMB; single diode; 1uA
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 68V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Leakage current: 1µA
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 68V; SMD; reel,tape; SMB; single diode; 1uA
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 68V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Leakage current: 1µA
Produkt ist nicht verfügbar
| 1SMB5946B-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 75V; SMD; reel,tape; SMB; single diode; 1uA
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 75V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Leakage current: 1µA
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 75V; SMD; reel,tape; SMB; single diode; 1uA
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 75V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Leakage current: 1µA
Produkt ist nicht verfügbar