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DMN6013LFGQ-13 Diodes Incorporated
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Description: MOSFET N-CH 60V 10.3A PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.3A (Ta), 45A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 10A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 55.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2577 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 51000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.56 EUR |
6000+ | 0.53 EUR |
9000+ | 0.49 EUR |
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Technische Details DMN6013LFGQ-13 Diodes Incorporated
Description: MOSFET N-CH 60V 10.3A PWRDI3333, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 10.3A (Ta), 45A (Tc), Rds On (Max) @ Id, Vgs: 13mOhm @ 10A, 10V, Power Dissipation (Max): 1W (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: PowerDI3333-8, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 55.4 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2577 pF @ 30 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote DMN6013LFGQ-13
Foto | Bezeichnung | Hersteller | Beschreibung |
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DMN6013LFGQ-13 | Hersteller : Diodes Inc |
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DMN6013LFGQ-13 | Hersteller : DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 8.3A; Idm: 58.3A; 2.1W Kind of package: reel; tape Mounting: SMD Case: PowerDI3333-8 Drain-source voltage: 60V Drain current: 8.3A On-state resistance: 18mΩ Type of transistor: N-MOSFET Application: automotive industry Power dissipation: 2.1W Polarisation: unipolar Gate charge: 55.4nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 58.3A Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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DMN6013LFGQ-13 | Hersteller : Diodes Incorporated |
![]() |
Produkt ist nicht verfügbar |
|
DMN6013LFGQ-13 | Hersteller : DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 8.3A; Idm: 58.3A; 2.1W Kind of package: reel; tape Mounting: SMD Case: PowerDI3333-8 Drain-source voltage: 60V Drain current: 8.3A On-state resistance: 18mΩ Type of transistor: N-MOSFET Application: automotive industry Power dissipation: 2.1W Polarisation: unipolar Gate charge: 55.4nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 58.3A |
Produkt ist nicht verfügbar |