Produkte > DIODES INCORPORATED > Alle Produkte des Herstellers DIODES INCORPORATED (75521) > Seite 1216 nach 1259
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SBR40U60CTE | DIODES INCORPORATED |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SBR®; THT; 60V; 20Ax2; I2PAK; tube Type of diode: Schottky rectifying Technology: SBR® Mounting: THT Max. off-state voltage: 60V Load current: 20A x2 Semiconductor structure: common cathode; double Case: I2PAK Kind of package: tube Max. forward impulse current: 230A Max. forward voltage: 0.6V |
Produkt ist nicht verfügbar |
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B130-13-F | DIODES INCORPORATED |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 30V; 1A; SMA; reel,tape Mounting: SMD Case: SMA Kind of package: reel; tape Type of diode: Schottky rectifying Capacitance: 110pF Max. off-state voltage: 30V Load current: 1A Semiconductor structure: single diode Max. forward impulse current: 30A |
auf Bestellung 14769 Stücke: Lieferzeit 14-21 Tag (e) |
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B130B-13-F | DIODES INCORPORATED |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 30V; 1A; SMB; reel,tape Mounting: SMD Case: SMB Kind of package: reel; tape Type of diode: Schottky rectifying Capacitance: 110pF Max. off-state voltage: 30V Max. forward voltage: 0.5V Load current: 1A Semiconductor structure: single diode Max. forward impulse current: 30A |
Produkt ist nicht verfügbar |
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B130L-13-F | DIODES INCORPORATED |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 30V; 1A; SMA; reel,tape Mounting: SMD Case: SMA Kind of package: reel; tape Type of diode: Schottky rectifying Capacitance: 110pF Max. off-state voltage: 30V Load current: 1A Semiconductor structure: single diode Max. forward impulse current: 25A |
auf Bestellung 4895 Stücke: Lieferzeit 14-21 Tag (e) |
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B140-13-F | DIODES INCORPORATED |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 40V; 1A; SMA; reel,tape Case: SMA Mounting: SMD Kind of package: reel; tape Semiconductor structure: single diode Max. off-state voltage: 40V Type of diode: Schottky rectifying Capacitance: 110pF Load current: 1A Max. forward impulse current: 30A |
auf Bestellung 4512 Stücke: Lieferzeit 14-21 Tag (e) |
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B140B-13-F | DIODES INCORPORATED |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 40V; 1A; SMB; reel,tape Case: SMB Mounting: SMD Kind of package: reel; tape Semiconductor structure: single diode Max. off-state voltage: 40V Type of diode: Schottky rectifying Capacitance: 110pF Load current: 1A Max. forward impulse current: 30A |
auf Bestellung 6325 Stücke: Lieferzeit 14-21 Tag (e) |
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B140Q-13-F | DIODES INCORPORATED |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 40V; 1A; SMA; reel,tape Case: SMA Mounting: SMD Kind of package: reel; tape Semiconductor structure: single diode Max. off-state voltage: 40V Type of diode: Schottky rectifying Capacitance: 110pF Max. forward voltage: 0.7V Load current: 1A Max. forward impulse current: 30A Leakage current: 10mA |
Produkt ist nicht verfügbar |
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B150-13-F | DIODES INCORPORATED |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 50V; 1A; SMA; reel,tape Type of diode: Schottky rectifying Max. off-state voltage: 50V Max. forward impulse current: 30A Semiconductor structure: single diode Case: SMA Mounting: SMD Kind of package: reel; tape Capacitance: 110pF Max. forward voltage: 0.7V Load current: 1A |
auf Bestellung 4990 Stücke: Lieferzeit 14-21 Tag (e) |
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B150B-13-F | DIODES INCORPORATED |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 50V; 1A; SMB; reel,tape Type of diode: Schottky rectifying Mounting: SMD Kind of package: reel; tape Max. forward voltage: 0.7V Case: SMB Semiconductor structure: single diode Capacitance: 110pF Max. off-state voltage: 50V Load current: 1A Max. forward impulse current: 30A |
auf Bestellung 2981 Stücke: Lieferzeit 14-21 Tag (e) |
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B160-13-F | DIODES INCORPORATED |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 60V; 1A; SMA; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 60V Load current: 1A Semiconductor structure: single diode Capacitance: 110pF Case: SMA Kind of package: reel; tape Max. forward impulse current: 30A |
auf Bestellung 1770 Stücke: Lieferzeit 14-21 Tag (e) |
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B160B-13-F | DIODES INCORPORATED |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 60V; 1A; SMB; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 60V Load current: 1A Semiconductor structure: single diode Capacitance: 110pF Case: SMB Kind of package: reel; tape Max. forward impulse current: 30A |
auf Bestellung 14755 Stücke: Lieferzeit 14-21 Tag (e) |
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PI3CH281QE | DIODES INCORPORATED |
Category: Analog multiplexers and switches Description: IC: analog switch; demultiplexer,multiplexer; 4: 1; Ch: 2; QSOP16 Kind of package: tube Output current: 0.12A Type of integrated circuit: analog switch Number of channels: 2 Bandwidth: 300MHz Supply voltage: 1.8...3.3V DC Resistance: 5Ω Case: QSOP16 Output configuration: 4:1 Mounting: SMD Kind of integrated circuit: demultiplexer; multiplexer |
auf Bestellung 52 Stücke: Lieferzeit 14-21 Tag (e) |
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PI3CH480QE | DIODES INCORPORATED |
Category: Analog multiplexers and switches Description: IC: analog switch; demultiplexer,multiplexer; 2: 1; Ch: 4; QSOP16 Type of integrated circuit: analog switch Kind of integrated circuit: demultiplexer; multiplexer Output configuration: 2:1 Number of channels: 4 Case: QSOP16 Supply voltage: 1.8...3.3V DC Mounting: SMD Kind of package: tube Resistance: 5Ω Bandwidth: 500MHz Output current: 0.12A |
Produkt ist nicht verfügbar |
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SMCJ78A-13-F | DIODES INCORPORATED |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 1.5kW; 86.7÷95.8V; 11.4A; unidirectional; SMC Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 78V Breakdown voltage: 86.7...95.8V Max. forward impulse current: 11.4A Semiconductor structure: unidirectional Case: SMC Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
Produkt ist nicht verfügbar |
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ZVN4424GTA | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 240V; 0.5A; Idm: 1.5A; 2.5W; SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 240V Drain current: 0.5A Pulsed drain current: 1.5A Power dissipation: 2.5W Case: SOT223 Gate-source voltage: ±40V On-state resistance: 5.5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
auf Bestellung 772 Stücke: Lieferzeit 14-21 Tag (e) |
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GBU1001 | DIODES INCORPORATED |
Category: Flat single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 100V; If: 10A; Ifsm: 220A Type of bridge rectifier: single-phase Max. off-state voltage: 100V Load current: 10A Max. forward impulse current: 220A Version: flat Case: GBU Electrical mounting: THT Leads: flat pin Kind of package: tube Features of semiconductor devices: glass passivated |
Produkt ist nicht verfügbar |
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GBU1002 | DIODES INCORPORATED |
Category: Flat single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 200V; If: 10A; Ifsm: 220A Type of bridge rectifier: single-phase Max. off-state voltage: 200V Load current: 10A Max. forward impulse current: 220A Version: flat Case: GBU Electrical mounting: THT Leads: flat pin Kind of package: tube Features of semiconductor devices: glass passivated |
Produkt ist nicht verfügbar |
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GBU1004 | DIODES INCORPORATED |
Category: Flat single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 400V; If: 10A; Ifsm: 220A Type of bridge rectifier: single-phase Max. off-state voltage: 0.4kV Load current: 10A Max. forward impulse current: 220A Version: flat Case: GBU Electrical mounting: THT Leads: flat pin Kind of package: tube Features of semiconductor devices: glass passivated |
Produkt ist nicht verfügbar |
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GBU1006 | DIODES INCORPORATED |
Category: Flat single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 600V; If: 10A; Ifsm: 220A Type of bridge rectifier: single-phase Max. off-state voltage: 0.6kV Load current: 10A Max. forward impulse current: 220A Version: flat Case: GBU Electrical mounting: THT Leads: flat pin Kind of package: tube Features of semiconductor devices: glass passivated |
auf Bestellung 7 Stücke: Lieferzeit 14-21 Tag (e) |
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DMG8822UTS-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 3.9A; Idm: 31A; 870mW; TSSOP8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 3.9A Pulsed drain current: 31A Power dissipation: 0.87W Case: TSSOP8 Gate-source voltage: ±8V On-state resistance: 37mΩ Mounting: SMD Gate charge: 9.6nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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DDTD113ZU-7-F | DIODES INCORPORATED |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 500mA; 200mW; SOT323; R1: 1kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.5A Power dissipation: 0.2W Case: SOT323 Current gain: 56 Mounting: SMD Kind of package: reel; tape Frequency: 200MHz Base resistor: 1kΩ Base-emitter resistor: 10kΩ |
Produkt ist nicht verfügbar |
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TLV272CS-13 | DIODES INCORPORATED |
Category: SMD operational amplifiers Description: IC: operational amplifier; 2MHz; 2.7÷16V; Ch: 2; SO8; reel,tape Type of integrated circuit: operational amplifier Bandwidth: 2MHz Open-loop gain: 110dB Mounting: SMT Number of channels: 2 Case: SO8 Slew rate: 2V/μs Operating temperature: 0...70°C Input offset voltage: 5mV Kind of package: reel; tape Power dissipation: 396mW Operating voltage: 2.7...16V |
auf Bestellung 2252 Stücke: Lieferzeit 14-21 Tag (e) |
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TLV272IM8-13 | DIODES INCORPORATED |
Category: SMD operational amplifiers Description: IC: operational amplifier; 2MHz; 2.7÷16V; Ch: 2; MSOP8; reel,tape Type of integrated circuit: operational amplifier Bandwidth: 2MHz Open-loop gain: 110dB Mounting: SMT Number of channels: 2 Case: MSOP8 Slew rate: 2V/μs Operating temperature: -40...125°C Input offset voltage: 5mV Kind of package: reel; tape Power dissipation: 0.3W Operating voltage: 2.7...16V |
Produkt ist nicht verfügbar |
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TLV272IS-13 | DIODES INCORPORATED |
Category: SMD operational amplifiers Description: IC: operational amplifier; 2MHz; 2.7÷16V; Ch: 2; SO8; reel,tape Type of integrated circuit: operational amplifier Bandwidth: 2MHz Open-loop gain: 110dB Mounting: SMT Number of channels: 2 Case: SO8 Slew rate: 2V/μs Operating temperature: -40...125°C Input offset voltage: 5mV Kind of package: reel; tape Power dissipation: 396mW Operating voltage: 2.7...16V |
auf Bestellung 1076 Stücke: Lieferzeit 14-21 Tag (e) |
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DMP2033UVT-13 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -3.4A; Idm: -10A; 1.7W; TSOT26 Type of transistor: P-MOSFET Mounting: SMD Case: TSOT26 On-state resistance: 0.2Ω Kind of package: reel; tape Power dissipation: 1.7W Polarisation: unipolar Drain-source voltage: -20V Drain current: -3.4A Gate charge: 10.4nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -10A |
Produkt ist nicht verfügbar |
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DMP2033UVT-7 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -3.4A; Idm: -10A; 1.7W; TSOT26 Type of transistor: P-MOSFET Mounting: SMD Case: TSOT26 On-state resistance: 0.2Ω Kind of package: reel; tape Power dissipation: 1.7W Polarisation: unipolar Drain-source voltage: -20V Drain current: -3.4A Gate charge: 10.4nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -10A |
Produkt ist nicht verfügbar |
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DMP2035U-7 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -2.9A; 0.81W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -2.9A Power dissipation: 0.81W Case: SOT23 Gate-source voltage: ±8V On-state resistance: 62mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
auf Bestellung 4989 Stücke: Lieferzeit 14-21 Tag (e) |
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DMP2035UFCL-7 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -5.3A; Idm: -40A; 1.6W Case: U-DFN1616-6 Mounting: SMD Kind of package: reel; tape Drain-source voltage: -20V Drain current: -5.3A On-state resistance: 45mΩ Type of transistor: P-MOSFET Power dissipation: 1.6W Polarisation: unipolar Gate charge: 44nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -40A |
Produkt ist nicht verfügbar |
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DMP2035UFDF-13 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -6.5A; Idm: -40A; 1.31W Case: U-DFN2020-6 Mounting: SMD Kind of package: reel; tape Drain-source voltage: -20V Drain current: -6.5A On-state resistance: 0.12Ω Type of transistor: P-MOSFET Power dissipation: 1.31W Polarisation: unipolar Gate charge: 20.5nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -40A |
Produkt ist nicht verfügbar |
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DMP2035UFDF-7 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -6.5A; Idm: -40A; 1.31W Case: U-DFN2020-6 Mounting: SMD Kind of package: reel; tape Drain-source voltage: -20V Drain current: -6.5A On-state resistance: 0.12Ω Type of transistor: P-MOSFET Power dissipation: 1.31W Polarisation: unipolar Gate charge: 20.5nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -40A |
Produkt ist nicht verfügbar |
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DMP2035UQ-7 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -4A; Idm: -24A; 1.2W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -4A Pulsed drain current: -24A Power dissipation: 1.2W Case: SOT23 Gate-source voltage: ±10V On-state resistance: 62mΩ Mounting: SMD Gate charge: 15.4nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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DMP2035UVT-7 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -4.8A; 1.2W; TSOT26 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -4.8A Power dissipation: 1.2W Case: TSOT26 Gate-source voltage: ±12V On-state resistance: 62mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
auf Bestellung 5084 Stücke: Lieferzeit 14-21 Tag (e) |
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DMG2305UX-13 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -3.3A; Idm: -15A; 1.4W; SOT23 Mounting: SMD On-state resistance: 0.2Ω Type of transistor: P-MOSFET Power dissipation: 1.4W Polarisation: unipolar Kind of package: reel; tape Drain current: -3.3A Drain-source voltage: -20V Case: SOT23 Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -15A |
Produkt ist nicht verfügbar |
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DMG2305UXQ-13 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -4A; Idm: -15A; 1.4W; SOT23 Mounting: SMD On-state resistance: 0.2Ω Type of transistor: P-MOSFET Power dissipation: 1.4W Polarisation: unipolar Kind of package: reel; tape Drain current: -4A Drain-source voltage: -20V Gate charge: 10.2nC Case: SOT23 Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -15A |
Produkt ist nicht verfügbar |
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DMG2305UXQ-7 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -4A; Idm: -15A; 1.4W; SOT23 Mounting: SMD On-state resistance: 0.2Ω Type of transistor: P-MOSFET Power dissipation: 1.4W Polarisation: unipolar Kind of package: reel; tape Drain current: -4A Drain-source voltage: -20V Gate charge: 10.2nC Case: SOT23 Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -15A |
Produkt ist nicht verfügbar |
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ZSR300GTA | DIODES INCORPORATED |
Category: Unregulated voltage regulators Description: IC: voltage regulator; linear,fixed; 3V; 0.2A; SOT223; SMD; ±2.5% Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; linear Output voltage: 3V Output current: 0.2A Case: SOT223 Mounting: SMD Kind of package: reel; tape Operating temperature: -55...125°C Tolerance: ±2.5% Number of channels: 1 Input voltage: 5...20V Manufacturer series: ZSR |
Produkt ist nicht verfügbar |
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AP7315D-25W5-7 | DIODES INCORPORATED |
Category: LDO unregulated voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 0.15A; SOT25; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.32V Output voltage: 2.5V Output current: 0.15A Case: SOT25 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...85°C Tolerance: ±1% Number of channels: 1 Input voltage: 1.7...5.25V Manufacturer series: AP7315 Integrated circuit features: output discharge; shutdown mode control input |
Produkt ist nicht verfügbar |
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DMJ70H600SH3 | DIODES INCORPORATED |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 700V; 7A; Idm: 11A; 45W; TO251 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 700V Drain current: 7A Pulsed drain current: 11A Power dissipation: 45W Case: TO251 Gate-source voltage: ±30V On-state resistance: 0.6Ω Mounting: THT Gate charge: 18.2nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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SMAJ11A-13-F | DIODES INCORPORATED |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 400W; 12.2÷13.5V; 22A; unidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 11V Breakdown voltage: 12.2...13.5V Max. forward impulse current: 22A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
auf Bestellung 4860 Stücke: Lieferzeit 14-21 Tag (e) |
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SMAJ11CA-13-F | DIODES INCORPORATED |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 400W; 12.2÷13.5V; 22A; bidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 11V Breakdown voltage: 12.2...13.5V Max. forward impulse current: 22A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
Produkt ist nicht verfügbar |
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SMAJ120A-13-F | DIODES INCORPORATED |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 400W; 133÷147V; 2A; unidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 120V Breakdown voltage: 133...147V Max. forward impulse current: 2A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
auf Bestellung 1426 Stücke: Lieferzeit 14-21 Tag (e) |
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SMAJ120CA-13-F | DIODES INCORPORATED |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 400W; 133÷147V; 2A; bidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 120V Breakdown voltage: 133...147V Max. forward impulse current: 2A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
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BAT400D-7-F | DIODES INCORPORATED |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 40V; 0.5A; SOT23; reel,tape; 450mW Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 40V Load current: 0.5A Semiconductor structure: single diode Case: SOT23 Max. forward voltage: 0.55V Max. forward impulse current: 3A Leakage current: 50µA Capacitance: 125pF Power dissipation: 0.45W Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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BAT40V-7 | DIODES INCORPORATED |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 40V; 0.2A; SOT563; 5ns; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 40V Load current: 0.2A Semiconductor structure: double independent Case: SOT563 Max. forward voltage: 0.33V Max. forward impulse current: 0.75A Capacitance: 10pF Reverse recovery time: 5ns Power dissipation: 0.15W Kind of package: reel; tape |
auf Bestellung 800 Stücke: Lieferzeit 14-21 Tag (e) |
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DMP2066LSN-7 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -3.7A; Idm: -18A; 1.25W; SC59 Mounting: SMD Case: SC59 Pulsed drain current: -18A Power dissipation: 1.25W Gate charge: 10.1nC Polarisation: unipolar Drain current: -3.7A Kind of channel: enhanced Drain-source voltage: -20V Type of transistor: P-MOSFET Kind of package: reel; tape On-state resistance: 70mΩ Gate-source voltage: ±12V |
Produkt ist nicht verfügbar |
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DMP2066UFDE-7 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -5.9A; Idm: -25A; 2.03W Mounting: SMD Case: U-DFN2020-6 Pulsed drain current: -25A Power dissipation: 2.03W Gate charge: 14.4nC Polarisation: unipolar Drain current: -5.9A Kind of channel: enhanced Drain-source voltage: -20V Type of transistor: P-MOSFET Kind of package: reel; tape On-state resistance: 75mΩ Gate-source voltage: ±12V |
Produkt ist nicht verfügbar |
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PAM2863ECR | DIODES INCORPORATED |
Category: LED drivers Description: IC: driver; DC/DC converter,LED driver; 2A; SOP8; Ch: 1; 4.5÷40V Type of integrated circuit: driver Kind of integrated circuit: DC/DC converter; LED driver Mounting: SMD Case: SOP8 Number of channels: 1 Operating voltage: 4.5...40V Output current: 2A |
auf Bestellung 1853 Stücke: Lieferzeit 14-21 Tag (e) |
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BCR430UW6-7 | DIODES INCORPORATED |
Category: LED drivers Description: IC: driver; single transistor; current regulator,LED driver Mounting: SMD Case: SOT26 Operating temperature: -55...150°C Operating voltage: 1.4...40V Integrated circuit features: linear dimming; PWM Kind of integrated circuit: current regulator; LED driver Topology: single transistor Output current: 10...350mA Type of integrated circuit: driver Number of channels: 1 |
Produkt ist nicht verfügbar |
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BCR430UW6Q-7 | DIODES INCORPORATED |
Category: LED drivers Description: IC: driver; single transistor; current regulator,LED driver Mounting: SMD Case: SOT26 Operating temperature: -55...150°C Application: automotive industry Operating voltage: 1.4...40V Integrated circuit features: linear dimming; PWM Kind of integrated circuit: current regulator; LED driver Topology: single transistor Output current: 10...350mA Type of integrated circuit: driver Number of channels: 1 |
Produkt ist nicht verfügbar |
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74AUP1G17FW5-7 | DIODES INCORPORATED |
Category: Buffers, transceivers, drivers Description: IC: digital; buffer; Ch: 1; CMOS; SMD; X1-DFN1010-6; 0.8÷3.6VDC; AUP Type of integrated circuit: digital Case: X1-DFN1010-6 Mounting: SMD Supply voltage: 0.8...3.6V DC Operating temperature: -40...150°C Family: AUP Kind of package: reel; tape Kind of output: push-pull Kind of input: with Schmitt trigger Technology: CMOS Kind of integrated circuit: buffer Number of channels: 1 |
Produkt ist nicht verfügbar |
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74AUP1G17FZ4-7 | DIODES INCORPORATED |
Category: Buffers, transceivers, drivers Description: IC: digital; buffer; Ch: 1; CMOS; SMD; X2-DFN1410-6; 0.8÷3.6VDC; AUP Type of integrated circuit: digital Case: X2-DFN1410-6 Mounting: SMD Supply voltage: 0.8...3.6V DC Operating temperature: -40...150°C Family: AUP Kind of package: reel; tape Kind of output: push-pull Kind of input: with Schmitt trigger Technology: CMOS Kind of integrated circuit: buffer Number of channels: 1 |
Produkt ist nicht verfügbar |
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74AUP1G17SE-7 | DIODES INCORPORATED |
Category: Buffers, transceivers, drivers Description: IC: digital; buffer,non-inverting; Ch: 1; SMD; SOT353; AUP; 0.9uA Mounting: SMD Kind of package: reel; tape Case: SOT353 Manufacturer series: AUP Type of integrated circuit: digital Number of channels: 1 Quiescent current: 0.9µA Kind of output: push-pull Supply voltage: 0.8...3.6V DC Operating temperature: -40...125°C Kind of input: with Schmitt trigger Kind of integrated circuit: buffer; non-inverting |
auf Bestellung 2378 Stücke: Lieferzeit 14-21 Tag (e) |
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APX811-40UG-7 | DIODES INCORPORATED |
Category: Watchdog and reset circuits Description: IC: Supervisor Integrated Circuit; push-pull; 1.1÷5.5VDC; SOT143 Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape Type of integrated circuit: Supervisor Integrated Circuit Delay time: 200ms Maximum output current: 20mA Active logical level: low Kind of RESET output: push-pull Integrated circuit features: manual reset Threshold on-voltage: 4V Kind of integrated circuit: power on reset monitor (PoR) Case: SOT143 DC supply current: 30µA Supply voltage: 1.1...5.5V DC |
Produkt ist nicht verfügbar |
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APX811-44UG-7 | DIODES INCORPORATED |
Category: Watchdog and reset circuits Description: IC: Supervisor Integrated Circuit; push-pull; 1.1÷5.5VDC; SOT143 Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape Type of integrated circuit: Supervisor Integrated Circuit Delay time: 200ms Maximum output current: 20mA Active logical level: low Kind of RESET output: push-pull Integrated circuit features: manual reset Threshold on-voltage: 4.38V Kind of integrated circuit: power on reset monitor (PoR) Case: SOT143 DC supply current: 30µA Supply voltage: 1.1...5.5V DC |
Produkt ist nicht verfügbar |
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APX811-46UG-7 | DIODES INCORPORATED |
Category: Watchdog and reset circuits Description: IC: Supervisor Integrated Circuit; push-pull; 1.1÷5.5VDC; SOT143 Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape Type of integrated circuit: Supervisor Integrated Circuit Delay time: 200ms Maximum output current: 20mA Active logical level: low Kind of RESET output: push-pull Integrated circuit features: manual reset Threshold on-voltage: 4.63V Kind of integrated circuit: power on reset monitor (PoR) Case: SOT143 DC supply current: 30µA Supply voltage: 1.1...5.5V DC |
Produkt ist nicht verfügbar |
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74AHCT1G00SE-7 | DIODES INCORPORATED |
Category: Gates, inverters Description: IC: digital; NAND; Ch: 1; IN: 2; CMOS,TTL; SMD; SOT353; 4.5÷5.5VDC Type of integrated circuit: digital Kind of gate: NAND Number of channels: 1 Number of inputs: 2 Technology: CMOS; TTL Mounting: SMD Case: SOT353 Supply voltage: 4.5...5.5V DC Operating temperature: -40...150°C Kind of package: reel; tape Kind of input: with Schmitt trigger Kind of output: totem pole Family: AHCT |
Produkt ist nicht verfügbar |
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74AHCT1G00W5-7 | DIODES INCORPORATED |
Category: Gates, inverters Description: IC: digital; NAND; Ch: 1; IN: 2; CMOS,TTL; SMD; SOT25; 4.5÷5.5VDC; AHCT Type of integrated circuit: digital Kind of gate: NAND Number of channels: 1 Number of inputs: 2 Technology: CMOS; TTL Mounting: SMD Case: SOT25 Supply voltage: 4.5...5.5V DC Operating temperature: -40...150°C Kind of package: reel; tape Kind of input: with Schmitt trigger Kind of output: totem pole Family: AHCT |
Produkt ist nicht verfügbar |
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SMCJ120A-13-F | DIODES INCORPORATED |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 1.5kW; 133÷147V; 7.9A; unidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 120V Breakdown voltage: 133...147V Max. forward impulse current: 7.9A Semiconductor structure: unidirectional Case: SMC Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
Produkt ist nicht verfügbar |
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SMCJ120CA-13-F | DIODES INCORPORATED |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 1.5kW; 133÷147V; 7.9A; bidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 120V Breakdown voltage: 133...147V Max. forward impulse current: 7.9A Semiconductor structure: bidirectional Case: SMC Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
Produkt ist nicht verfügbar |
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SMCJ12A-13-F | DIODES INCORPORATED |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 1.5kW; 13.3÷14.7V; 75.3A; unidirectional; SMC Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 12V Breakdown voltage: 13.3...14.7V Max. forward impulse current: 75.3A Semiconductor structure: unidirectional Case: SMC Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
Produkt ist nicht verfügbar |
SBR40U60CTE |
Hersteller: DIODES INCORPORATED
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SBR®; THT; 60V; 20Ax2; I2PAK; tube
Type of diode: Schottky rectifying
Technology: SBR®
Mounting: THT
Max. off-state voltage: 60V
Load current: 20A x2
Semiconductor structure: common cathode; double
Case: I2PAK
Kind of package: tube
Max. forward impulse current: 230A
Max. forward voltage: 0.6V
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SBR®; THT; 60V; 20Ax2; I2PAK; tube
Type of diode: Schottky rectifying
Technology: SBR®
Mounting: THT
Max. off-state voltage: 60V
Load current: 20A x2
Semiconductor structure: common cathode; double
Case: I2PAK
Kind of package: tube
Max. forward impulse current: 230A
Max. forward voltage: 0.6V
Produkt ist nicht verfügbar
B130-13-F |
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 1A; SMA; reel,tape
Mounting: SMD
Case: SMA
Kind of package: reel; tape
Type of diode: Schottky rectifying
Capacitance: 110pF
Max. off-state voltage: 30V
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 30A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 1A; SMA; reel,tape
Mounting: SMD
Case: SMA
Kind of package: reel; tape
Type of diode: Schottky rectifying
Capacitance: 110pF
Max. off-state voltage: 30V
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 30A
auf Bestellung 14769 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
650+ | 0.11 EUR |
1120+ | 0.064 EUR |
1260+ | 0.057 EUR |
1460+ | 0.049 EUR |
1540+ | 0.046 EUR |
B130B-13-F |
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 1A; SMB; reel,tape
Mounting: SMD
Case: SMB
Kind of package: reel; tape
Type of diode: Schottky rectifying
Capacitance: 110pF
Max. off-state voltage: 30V
Max. forward voltage: 0.5V
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 30A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 1A; SMB; reel,tape
Mounting: SMD
Case: SMB
Kind of package: reel; tape
Type of diode: Schottky rectifying
Capacitance: 110pF
Max. off-state voltage: 30V
Max. forward voltage: 0.5V
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 30A
Produkt ist nicht verfügbar
B130L-13-F |
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 1A; SMA; reel,tape
Mounting: SMD
Case: SMA
Kind of package: reel; tape
Type of diode: Schottky rectifying
Capacitance: 110pF
Max. off-state voltage: 30V
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 25A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 1A; SMA; reel,tape
Mounting: SMD
Case: SMA
Kind of package: reel; tape
Type of diode: Schottky rectifying
Capacitance: 110pF
Max. off-state voltage: 30V
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 25A
auf Bestellung 4895 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
355+ | 0.2 EUR |
425+ | 0.17 EUR |
480+ | 0.15 EUR |
555+ | 0.13 EUR |
585+ | 0.12 EUR |
B140-13-F |
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 1A; SMA; reel,tape
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Max. off-state voltage: 40V
Type of diode: Schottky rectifying
Capacitance: 110pF
Load current: 1A
Max. forward impulse current: 30A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 1A; SMA; reel,tape
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Max. off-state voltage: 40V
Type of diode: Schottky rectifying
Capacitance: 110pF
Load current: 1A
Max. forward impulse current: 30A
auf Bestellung 4512 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
710+ | 0.1 EUR |
1120+ | 0.064 EUR |
1260+ | 0.057 EUR |
1450+ | 0.049 EUR |
1530+ | 0.047 EUR |
B140B-13-F |
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 1A; SMB; reel,tape
Case: SMB
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Max. off-state voltage: 40V
Type of diode: Schottky rectifying
Capacitance: 110pF
Load current: 1A
Max. forward impulse current: 30A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 1A; SMB; reel,tape
Case: SMB
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Max. off-state voltage: 40V
Type of diode: Schottky rectifying
Capacitance: 110pF
Load current: 1A
Max. forward impulse current: 30A
auf Bestellung 6325 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
300+ | 0.24 EUR |
795+ | 0.09 EUR |
900+ | 0.08 EUR |
955+ | 0.075 EUR |
1005+ | 0.071 EUR |
3000+ | 0.068 EUR |
B140Q-13-F |
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 1A; SMA; reel,tape
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Max. off-state voltage: 40V
Type of diode: Schottky rectifying
Capacitance: 110pF
Max. forward voltage: 0.7V
Load current: 1A
Max. forward impulse current: 30A
Leakage current: 10mA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 1A; SMA; reel,tape
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Max. off-state voltage: 40V
Type of diode: Schottky rectifying
Capacitance: 110pF
Max. forward voltage: 0.7V
Load current: 1A
Max. forward impulse current: 30A
Leakage current: 10mA
Produkt ist nicht verfügbar
B150-13-F |
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 50V; 1A; SMA; reel,tape
Type of diode: Schottky rectifying
Max. off-state voltage: 50V
Max. forward impulse current: 30A
Semiconductor structure: single diode
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Capacitance: 110pF
Max. forward voltage: 0.7V
Load current: 1A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 50V; 1A; SMA; reel,tape
Type of diode: Schottky rectifying
Max. off-state voltage: 50V
Max. forward impulse current: 30A
Semiconductor structure: single diode
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Capacitance: 110pF
Max. forward voltage: 0.7V
Load current: 1A
auf Bestellung 4990 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
610+ | 0.12 EUR |
1060+ | 0.068 EUR |
1200+ | 0.06 EUR |
1380+ | 0.052 EUR |
1460+ | 0.049 EUR |
B150B-13-F |
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 50V; 1A; SMB; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Kind of package: reel; tape
Max. forward voltage: 0.7V
Case: SMB
Semiconductor structure: single diode
Capacitance: 110pF
Max. off-state voltage: 50V
Load current: 1A
Max. forward impulse current: 30A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 50V; 1A; SMB; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Kind of package: reel; tape
Max. forward voltage: 0.7V
Case: SMB
Semiconductor structure: single diode
Capacitance: 110pF
Max. off-state voltage: 50V
Load current: 1A
Max. forward impulse current: 30A
auf Bestellung 2981 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
600+ | 0.12 EUR |
700+ | 0.1 EUR |
890+ | 0.08 EUR |
950+ | 0.076 EUR |
B160-13-F |
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 1A; SMA; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 1A
Semiconductor structure: single diode
Capacitance: 110pF
Case: SMA
Kind of package: reel; tape
Max. forward impulse current: 30A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 1A; SMA; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 1A
Semiconductor structure: single diode
Capacitance: 110pF
Case: SMA
Kind of package: reel; tape
Max. forward impulse current: 30A
auf Bestellung 1770 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
650+ | 0.11 EUR |
1120+ | 0.064 EUR |
1260+ | 0.057 EUR |
1460+ | 0.049 EUR |
1540+ | 0.046 EUR |
B160B-13-F |
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 1A; SMB; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 1A
Semiconductor structure: single diode
Capacitance: 110pF
Case: SMB
Kind of package: reel; tape
Max. forward impulse current: 30A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 1A; SMB; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 1A
Semiconductor structure: single diode
Capacitance: 110pF
Case: SMB
Kind of package: reel; tape
Max. forward impulse current: 30A
auf Bestellung 14755 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
355+ | 0.2 EUR |
870+ | 0.082 EUR |
990+ | 0.073 EUR |
1080+ | 0.066 EUR |
1100+ | 0.065 EUR |
1145+ | 0.063 EUR |
3000+ | 0.061 EUR |
PI3CH281QE |
Hersteller: DIODES INCORPORATED
Category: Analog multiplexers and switches
Description: IC: analog switch; demultiplexer,multiplexer; 4: 1; Ch: 2; QSOP16
Kind of package: tube
Output current: 0.12A
Type of integrated circuit: analog switch
Number of channels: 2
Bandwidth: 300MHz
Supply voltage: 1.8...3.3V DC
Resistance: 5Ω
Case: QSOP16
Output configuration: 4:1
Mounting: SMD
Kind of integrated circuit: demultiplexer; multiplexer
Category: Analog multiplexers and switches
Description: IC: analog switch; demultiplexer,multiplexer; 4: 1; Ch: 2; QSOP16
Kind of package: tube
Output current: 0.12A
Type of integrated circuit: analog switch
Number of channels: 2
Bandwidth: 300MHz
Supply voltage: 1.8...3.3V DC
Resistance: 5Ω
Case: QSOP16
Output configuration: 4:1
Mounting: SMD
Kind of integrated circuit: demultiplexer; multiplexer
auf Bestellung 52 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
52+ | 1.37 EUR |
PI3CH480QE |
Hersteller: DIODES INCORPORATED
Category: Analog multiplexers and switches
Description: IC: analog switch; demultiplexer,multiplexer; 2: 1; Ch: 4; QSOP16
Type of integrated circuit: analog switch
Kind of integrated circuit: demultiplexer; multiplexer
Output configuration: 2:1
Number of channels: 4
Case: QSOP16
Supply voltage: 1.8...3.3V DC
Mounting: SMD
Kind of package: tube
Resistance: 5Ω
Bandwidth: 500MHz
Output current: 0.12A
Category: Analog multiplexers and switches
Description: IC: analog switch; demultiplexer,multiplexer; 2: 1; Ch: 4; QSOP16
Type of integrated circuit: analog switch
Kind of integrated circuit: demultiplexer; multiplexer
Output configuration: 2:1
Number of channels: 4
Case: QSOP16
Supply voltage: 1.8...3.3V DC
Mounting: SMD
Kind of package: tube
Resistance: 5Ω
Bandwidth: 500MHz
Output current: 0.12A
Produkt ist nicht verfügbar
SMCJ78A-13-F |
Hersteller: DIODES INCORPORATED
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 86.7÷95.8V; 11.4A; unidirectional; SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 78V
Breakdown voltage: 86.7...95.8V
Max. forward impulse current: 11.4A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 86.7÷95.8V; 11.4A; unidirectional; SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 78V
Breakdown voltage: 86.7...95.8V
Max. forward impulse current: 11.4A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
ZVN4424GTA |
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 240V; 0.5A; Idm: 1.5A; 2.5W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 240V
Drain current: 0.5A
Pulsed drain current: 1.5A
Power dissipation: 2.5W
Case: SOT223
Gate-source voltage: ±40V
On-state resistance: 5.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 240V; 0.5A; Idm: 1.5A; 2.5W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 240V
Drain current: 0.5A
Pulsed drain current: 1.5A
Power dissipation: 2.5W
Case: SOT223
Gate-source voltage: ±40V
On-state resistance: 5.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 772 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
58+ | 1.25 EUR |
151+ | 0.48 EUR |
171+ | 0.42 EUR |
190+ | 0.38 EUR |
199+ | 0.36 EUR |
211+ | 0.34 EUR |
GBU1001 |
Hersteller: DIODES INCORPORATED
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 100V; If: 10A; Ifsm: 220A
Type of bridge rectifier: single-phase
Max. off-state voltage: 100V
Load current: 10A
Max. forward impulse current: 220A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Features of semiconductor devices: glass passivated
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 100V; If: 10A; Ifsm: 220A
Type of bridge rectifier: single-phase
Max. off-state voltage: 100V
Load current: 10A
Max. forward impulse current: 220A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
GBU1002 |
Hersteller: DIODES INCORPORATED
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 200V; If: 10A; Ifsm: 220A
Type of bridge rectifier: single-phase
Max. off-state voltage: 200V
Load current: 10A
Max. forward impulse current: 220A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Features of semiconductor devices: glass passivated
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 200V; If: 10A; Ifsm: 220A
Type of bridge rectifier: single-phase
Max. off-state voltage: 200V
Load current: 10A
Max. forward impulse current: 220A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
GBU1004 |
Hersteller: DIODES INCORPORATED
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 10A; Ifsm: 220A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.4kV
Load current: 10A
Max. forward impulse current: 220A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Features of semiconductor devices: glass passivated
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 10A; Ifsm: 220A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.4kV
Load current: 10A
Max. forward impulse current: 220A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
GBU1006 |
Hersteller: DIODES INCORPORATED
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 10A; Ifsm: 220A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 10A
Max. forward impulse current: 220A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Features of semiconductor devices: glass passivated
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 10A; Ifsm: 220A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 10A
Max. forward impulse current: 220A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Features of semiconductor devices: glass passivated
auf Bestellung 7 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
7+ | 10.21 EUR |
DMG8822UTS-13 |
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.9A; Idm: 31A; 870mW; TSSOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.9A
Pulsed drain current: 31A
Power dissipation: 0.87W
Case: TSSOP8
Gate-source voltage: ±8V
On-state resistance: 37mΩ
Mounting: SMD
Gate charge: 9.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.9A; Idm: 31A; 870mW; TSSOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.9A
Pulsed drain current: 31A
Power dissipation: 0.87W
Case: TSSOP8
Gate-source voltage: ±8V
On-state resistance: 37mΩ
Mounting: SMD
Gate charge: 9.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
DDTD113ZU-7-F |
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 500mA; 200mW; SOT323; R1: 1kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.5A
Power dissipation: 0.2W
Case: SOT323
Current gain: 56
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Base resistor: 1kΩ
Base-emitter resistor: 10kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 500mA; 200mW; SOT323; R1: 1kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.5A
Power dissipation: 0.2W
Case: SOT323
Current gain: 56
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Base resistor: 1kΩ
Base-emitter resistor: 10kΩ
Produkt ist nicht verfügbar
TLV272CS-13 |
Hersteller: DIODES INCORPORATED
Category: SMD operational amplifiers
Description: IC: operational amplifier; 2MHz; 2.7÷16V; Ch: 2; SO8; reel,tape
Type of integrated circuit: operational amplifier
Bandwidth: 2MHz
Open-loop gain: 110dB
Mounting: SMT
Number of channels: 2
Case: SO8
Slew rate: 2V/μs
Operating temperature: 0...70°C
Input offset voltage: 5mV
Kind of package: reel; tape
Power dissipation: 396mW
Operating voltage: 2.7...16V
Category: SMD operational amplifiers
Description: IC: operational amplifier; 2MHz; 2.7÷16V; Ch: 2; SO8; reel,tape
Type of integrated circuit: operational amplifier
Bandwidth: 2MHz
Open-loop gain: 110dB
Mounting: SMT
Number of channels: 2
Case: SO8
Slew rate: 2V/μs
Operating temperature: 0...70°C
Input offset voltage: 5mV
Kind of package: reel; tape
Power dissipation: 396mW
Operating voltage: 2.7...16V
auf Bestellung 2252 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
167+ | 0.43 EUR |
185+ | 0.39 EUR |
242+ | 0.3 EUR |
256+ | 0.28 EUR |
TLV272IM8-13 |
Hersteller: DIODES INCORPORATED
Category: SMD operational amplifiers
Description: IC: operational amplifier; 2MHz; 2.7÷16V; Ch: 2; MSOP8; reel,tape
Type of integrated circuit: operational amplifier
Bandwidth: 2MHz
Open-loop gain: 110dB
Mounting: SMT
Number of channels: 2
Case: MSOP8
Slew rate: 2V/μs
Operating temperature: -40...125°C
Input offset voltage: 5mV
Kind of package: reel; tape
Power dissipation: 0.3W
Operating voltage: 2.7...16V
Category: SMD operational amplifiers
Description: IC: operational amplifier; 2MHz; 2.7÷16V; Ch: 2; MSOP8; reel,tape
Type of integrated circuit: operational amplifier
Bandwidth: 2MHz
Open-loop gain: 110dB
Mounting: SMT
Number of channels: 2
Case: MSOP8
Slew rate: 2V/μs
Operating temperature: -40...125°C
Input offset voltage: 5mV
Kind of package: reel; tape
Power dissipation: 0.3W
Operating voltage: 2.7...16V
Produkt ist nicht verfügbar
TLV272IS-13 |
Hersteller: DIODES INCORPORATED
Category: SMD operational amplifiers
Description: IC: operational amplifier; 2MHz; 2.7÷16V; Ch: 2; SO8; reel,tape
Type of integrated circuit: operational amplifier
Bandwidth: 2MHz
Open-loop gain: 110dB
Mounting: SMT
Number of channels: 2
Case: SO8
Slew rate: 2V/μs
Operating temperature: -40...125°C
Input offset voltage: 5mV
Kind of package: reel; tape
Power dissipation: 396mW
Operating voltage: 2.7...16V
Category: SMD operational amplifiers
Description: IC: operational amplifier; 2MHz; 2.7÷16V; Ch: 2; SO8; reel,tape
Type of integrated circuit: operational amplifier
Bandwidth: 2MHz
Open-loop gain: 110dB
Mounting: SMT
Number of channels: 2
Case: SO8
Slew rate: 2V/μs
Operating temperature: -40...125°C
Input offset voltage: 5mV
Kind of package: reel; tape
Power dissipation: 396mW
Operating voltage: 2.7...16V
auf Bestellung 1076 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
173+ | 0.41 EUR |
191+ | 0.37 EUR |
254+ | 0.28 EUR |
268+ | 0.27 EUR |
DMP2033UVT-13 |
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.4A; Idm: -10A; 1.7W; TSOT26
Type of transistor: P-MOSFET
Mounting: SMD
Case: TSOT26
On-state resistance: 0.2Ω
Kind of package: reel; tape
Power dissipation: 1.7W
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.4A
Gate charge: 10.4nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -10A
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.4A; Idm: -10A; 1.7W; TSOT26
Type of transistor: P-MOSFET
Mounting: SMD
Case: TSOT26
On-state resistance: 0.2Ω
Kind of package: reel; tape
Power dissipation: 1.7W
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.4A
Gate charge: 10.4nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -10A
Produkt ist nicht verfügbar
DMP2033UVT-7 |
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.4A; Idm: -10A; 1.7W; TSOT26
Type of transistor: P-MOSFET
Mounting: SMD
Case: TSOT26
On-state resistance: 0.2Ω
Kind of package: reel; tape
Power dissipation: 1.7W
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.4A
Gate charge: 10.4nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -10A
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.4A; Idm: -10A; 1.7W; TSOT26
Type of transistor: P-MOSFET
Mounting: SMD
Case: TSOT26
On-state resistance: 0.2Ω
Kind of package: reel; tape
Power dissipation: 1.7W
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.4A
Gate charge: 10.4nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -10A
Produkt ist nicht verfügbar
DMP2035U-7 |
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.9A; 0.81W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.9A
Power dissipation: 0.81W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 62mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.9A; 0.81W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.9A
Power dissipation: 0.81W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 62mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
auf Bestellung 4989 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
295+ | 0.25 EUR |
575+ | 0.12 EUR |
660+ | 0.11 EUR |
760+ | 0.094 EUR |
805+ | 0.089 EUR |
DMP2035UFCL-7 |
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5.3A; Idm: -40A; 1.6W
Case: U-DFN1616-6
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: -20V
Drain current: -5.3A
On-state resistance: 45mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.6W
Polarisation: unipolar
Gate charge: 44nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -40A
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5.3A; Idm: -40A; 1.6W
Case: U-DFN1616-6
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: -20V
Drain current: -5.3A
On-state resistance: 45mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.6W
Polarisation: unipolar
Gate charge: 44nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -40A
Produkt ist nicht verfügbar
DMP2035UFDF-13 |
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -6.5A; Idm: -40A; 1.31W
Case: U-DFN2020-6
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: -20V
Drain current: -6.5A
On-state resistance: 0.12Ω
Type of transistor: P-MOSFET
Power dissipation: 1.31W
Polarisation: unipolar
Gate charge: 20.5nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -40A
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -6.5A; Idm: -40A; 1.31W
Case: U-DFN2020-6
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: -20V
Drain current: -6.5A
On-state resistance: 0.12Ω
Type of transistor: P-MOSFET
Power dissipation: 1.31W
Polarisation: unipolar
Gate charge: 20.5nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -40A
Produkt ist nicht verfügbar
DMP2035UFDF-7 |
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -6.5A; Idm: -40A; 1.31W
Case: U-DFN2020-6
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: -20V
Drain current: -6.5A
On-state resistance: 0.12Ω
Type of transistor: P-MOSFET
Power dissipation: 1.31W
Polarisation: unipolar
Gate charge: 20.5nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -40A
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -6.5A; Idm: -40A; 1.31W
Case: U-DFN2020-6
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: -20V
Drain current: -6.5A
On-state resistance: 0.12Ω
Type of transistor: P-MOSFET
Power dissipation: 1.31W
Polarisation: unipolar
Gate charge: 20.5nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -40A
Produkt ist nicht verfügbar
DMP2035UQ-7 |
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4A; Idm: -24A; 1.2W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4A
Pulsed drain current: -24A
Power dissipation: 1.2W
Case: SOT23
Gate-source voltage: ±10V
On-state resistance: 62mΩ
Mounting: SMD
Gate charge: 15.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4A; Idm: -24A; 1.2W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4A
Pulsed drain current: -24A
Power dissipation: 1.2W
Case: SOT23
Gate-source voltage: ±10V
On-state resistance: 62mΩ
Mounting: SMD
Gate charge: 15.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
DMP2035UVT-7 |
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.8A; 1.2W; TSOT26
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4.8A
Power dissipation: 1.2W
Case: TSOT26
Gate-source voltage: ±12V
On-state resistance: 62mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.8A; 1.2W; TSOT26
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4.8A
Power dissipation: 1.2W
Case: TSOT26
Gate-source voltage: ±12V
On-state resistance: 62mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
auf Bestellung 5084 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
114+ | 0.63 EUR |
167+ | 0.43 EUR |
227+ | 0.32 EUR |
313+ | 0.23 EUR |
461+ | 0.16 EUR |
487+ | 0.15 EUR |
DMG2305UX-13 |
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.3A; Idm: -15A; 1.4W; SOT23
Mounting: SMD
On-state resistance: 0.2Ω
Type of transistor: P-MOSFET
Power dissipation: 1.4W
Polarisation: unipolar
Kind of package: reel; tape
Drain current: -3.3A
Drain-source voltage: -20V
Case: SOT23
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -15A
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.3A; Idm: -15A; 1.4W; SOT23
Mounting: SMD
On-state resistance: 0.2Ω
Type of transistor: P-MOSFET
Power dissipation: 1.4W
Polarisation: unipolar
Kind of package: reel; tape
Drain current: -3.3A
Drain-source voltage: -20V
Case: SOT23
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -15A
Produkt ist nicht verfügbar
DMG2305UXQ-13 |
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4A; Idm: -15A; 1.4W; SOT23
Mounting: SMD
On-state resistance: 0.2Ω
Type of transistor: P-MOSFET
Power dissipation: 1.4W
Polarisation: unipolar
Kind of package: reel; tape
Drain current: -4A
Drain-source voltage: -20V
Gate charge: 10.2nC
Case: SOT23
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -15A
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4A; Idm: -15A; 1.4W; SOT23
Mounting: SMD
On-state resistance: 0.2Ω
Type of transistor: P-MOSFET
Power dissipation: 1.4W
Polarisation: unipolar
Kind of package: reel; tape
Drain current: -4A
Drain-source voltage: -20V
Gate charge: 10.2nC
Case: SOT23
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -15A
Produkt ist nicht verfügbar
DMG2305UXQ-7 |
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4A; Idm: -15A; 1.4W; SOT23
Mounting: SMD
On-state resistance: 0.2Ω
Type of transistor: P-MOSFET
Power dissipation: 1.4W
Polarisation: unipolar
Kind of package: reel; tape
Drain current: -4A
Drain-source voltage: -20V
Gate charge: 10.2nC
Case: SOT23
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -15A
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4A; Idm: -15A; 1.4W; SOT23
Mounting: SMD
On-state resistance: 0.2Ω
Type of transistor: P-MOSFET
Power dissipation: 1.4W
Polarisation: unipolar
Kind of package: reel; tape
Drain current: -4A
Drain-source voltage: -20V
Gate charge: 10.2nC
Case: SOT23
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -15A
Produkt ist nicht verfügbar
ZSR300GTA |
Hersteller: DIODES INCORPORATED
Category: Unregulated voltage regulators
Description: IC: voltage regulator; linear,fixed; 3V; 0.2A; SOT223; SMD; ±2.5%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 3V
Output current: 0.2A
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -55...125°C
Tolerance: ±2.5%
Number of channels: 1
Input voltage: 5...20V
Manufacturer series: ZSR
Category: Unregulated voltage regulators
Description: IC: voltage regulator; linear,fixed; 3V; 0.2A; SOT223; SMD; ±2.5%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 3V
Output current: 0.2A
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -55...125°C
Tolerance: ±2.5%
Number of channels: 1
Input voltage: 5...20V
Manufacturer series: ZSR
Produkt ist nicht verfügbar
AP7315D-25W5-7 |
Hersteller: DIODES INCORPORATED
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 0.15A; SOT25; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.32V
Output voltage: 2.5V
Output current: 0.15A
Case: SOT25
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 1.7...5.25V
Manufacturer series: AP7315
Integrated circuit features: output discharge; shutdown mode control input
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 0.15A; SOT25; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.32V
Output voltage: 2.5V
Output current: 0.15A
Case: SOT25
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 1.7...5.25V
Manufacturer series: AP7315
Integrated circuit features: output discharge; shutdown mode control input
Produkt ist nicht verfügbar
DMJ70H600SH3 |
Hersteller: DIODES INCORPORATED
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 7A; Idm: 11A; 45W; TO251
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 7A
Pulsed drain current: 11A
Power dissipation: 45W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 18.2nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 7A; Idm: 11A; 45W; TO251
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 7A
Pulsed drain current: 11A
Power dissipation: 45W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 18.2nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
SMAJ11A-13-F |
Hersteller: DIODES INCORPORATED
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 400W; 12.2÷13.5V; 22A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 11V
Breakdown voltage: 12.2...13.5V
Max. forward impulse current: 22A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 400W; 12.2÷13.5V; 22A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 11V
Breakdown voltage: 12.2...13.5V
Max. forward impulse current: 22A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 4860 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
275+ | 0.26 EUR |
575+ | 0.12 EUR |
670+ | 0.11 EUR |
795+ | 0.09 EUR |
850+ | 0.084 EUR |
SMAJ11CA-13-F |
Hersteller: DIODES INCORPORATED
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 400W; 12.2÷13.5V; 22A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 11V
Breakdown voltage: 12.2...13.5V
Max. forward impulse current: 22A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 400W; 12.2÷13.5V; 22A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 11V
Breakdown voltage: 12.2...13.5V
Max. forward impulse current: 22A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
SMAJ120A-13-F |
Hersteller: DIODES INCORPORATED
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 400W; 133÷147V; 2A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 120V
Breakdown voltage: 133...147V
Max. forward impulse current: 2A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 400W; 133÷147V; 2A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 120V
Breakdown voltage: 133...147V
Max. forward impulse current: 2A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 1426 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
290+ | 0.25 EUR |
600+ | 0.12 EUR |
670+ | 0.11 EUR |
865+ | 0.083 EUR |
910+ | 0.079 EUR |
SMAJ120CA-13-F |
Hersteller: DIODES INCORPORATED
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 400W; 133÷147V; 2A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 120V
Breakdown voltage: 133...147V
Max. forward impulse current: 2A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 400W; 133÷147V; 2A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 120V
Breakdown voltage: 133...147V
Max. forward impulse current: 2A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
335+ | 0.21 EUR |
705+ | 0.1 EUR |
825+ | 0.087 EUR |
870+ | 0.082 EUR |
1000+ | 0.081 EUR |
5000+ | 0.079 EUR |
BAT400D-7-F |
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 0.5A; SOT23; reel,tape; 450mW
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.5A
Semiconductor structure: single diode
Case: SOT23
Max. forward voltage: 0.55V
Max. forward impulse current: 3A
Leakage current: 50µA
Capacitance: 125pF
Power dissipation: 0.45W
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 0.5A; SOT23; reel,tape; 450mW
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.5A
Semiconductor structure: single diode
Case: SOT23
Max. forward voltage: 0.55V
Max. forward impulse current: 3A
Leakage current: 50µA
Capacitance: 125pF
Power dissipation: 0.45W
Kind of package: reel; tape
Produkt ist nicht verfügbar
BAT40V-7 |
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 0.2A; SOT563; 5ns; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Semiconductor structure: double independent
Case: SOT563
Max. forward voltage: 0.33V
Max. forward impulse current: 0.75A
Capacitance: 10pF
Reverse recovery time: 5ns
Power dissipation: 0.15W
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 0.2A; SOT563; 5ns; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Semiconductor structure: double independent
Case: SOT563
Max. forward voltage: 0.33V
Max. forward impulse current: 0.75A
Capacitance: 10pF
Reverse recovery time: 5ns
Power dissipation: 0.15W
Kind of package: reel; tape
auf Bestellung 800 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
193+ | 0.37 EUR |
286+ | 0.25 EUR |
527+ | 0.14 EUR |
800+ | 0.089 EUR |
DMP2066LSN-7 |
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.7A; Idm: -18A; 1.25W; SC59
Mounting: SMD
Case: SC59
Pulsed drain current: -18A
Power dissipation: 1.25W
Gate charge: 10.1nC
Polarisation: unipolar
Drain current: -3.7A
Kind of channel: enhanced
Drain-source voltage: -20V
Type of transistor: P-MOSFET
Kind of package: reel; tape
On-state resistance: 70mΩ
Gate-source voltage: ±12V
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.7A; Idm: -18A; 1.25W; SC59
Mounting: SMD
Case: SC59
Pulsed drain current: -18A
Power dissipation: 1.25W
Gate charge: 10.1nC
Polarisation: unipolar
Drain current: -3.7A
Kind of channel: enhanced
Drain-source voltage: -20V
Type of transistor: P-MOSFET
Kind of package: reel; tape
On-state resistance: 70mΩ
Gate-source voltage: ±12V
Produkt ist nicht verfügbar
DMP2066UFDE-7 |
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5.9A; Idm: -25A; 2.03W
Mounting: SMD
Case: U-DFN2020-6
Pulsed drain current: -25A
Power dissipation: 2.03W
Gate charge: 14.4nC
Polarisation: unipolar
Drain current: -5.9A
Kind of channel: enhanced
Drain-source voltage: -20V
Type of transistor: P-MOSFET
Kind of package: reel; tape
On-state resistance: 75mΩ
Gate-source voltage: ±12V
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5.9A; Idm: -25A; 2.03W
Mounting: SMD
Case: U-DFN2020-6
Pulsed drain current: -25A
Power dissipation: 2.03W
Gate charge: 14.4nC
Polarisation: unipolar
Drain current: -5.9A
Kind of channel: enhanced
Drain-source voltage: -20V
Type of transistor: P-MOSFET
Kind of package: reel; tape
On-state resistance: 75mΩ
Gate-source voltage: ±12V
Produkt ist nicht verfügbar
PAM2863ECR |
Hersteller: DIODES INCORPORATED
Category: LED drivers
Description: IC: driver; DC/DC converter,LED driver; 2A; SOP8; Ch: 1; 4.5÷40V
Type of integrated circuit: driver
Kind of integrated circuit: DC/DC converter; LED driver
Mounting: SMD
Case: SOP8
Number of channels: 1
Operating voltage: 4.5...40V
Output current: 2A
Category: LED drivers
Description: IC: driver; DC/DC converter,LED driver; 2A; SOP8; Ch: 1; 4.5÷40V
Type of integrated circuit: driver
Kind of integrated circuit: DC/DC converter; LED driver
Mounting: SMD
Case: SOP8
Number of channels: 1
Operating voltage: 4.5...40V
Output current: 2A
auf Bestellung 1853 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
61+ | 1.17 EUR |
87+ | 0.83 EUR |
100+ | 0.72 EUR |
109+ | 0.66 EUR |
114+ | 0.63 EUR |
500+ | 0.61 EUR |
BCR430UW6-7 |
Hersteller: DIODES INCORPORATED
Category: LED drivers
Description: IC: driver; single transistor; current regulator,LED driver
Mounting: SMD
Case: SOT26
Operating temperature: -55...150°C
Operating voltage: 1.4...40V
Integrated circuit features: linear dimming; PWM
Kind of integrated circuit: current regulator; LED driver
Topology: single transistor
Output current: 10...350mA
Type of integrated circuit: driver
Number of channels: 1
Category: LED drivers
Description: IC: driver; single transistor; current regulator,LED driver
Mounting: SMD
Case: SOT26
Operating temperature: -55...150°C
Operating voltage: 1.4...40V
Integrated circuit features: linear dimming; PWM
Kind of integrated circuit: current regulator; LED driver
Topology: single transistor
Output current: 10...350mA
Type of integrated circuit: driver
Number of channels: 1
Produkt ist nicht verfügbar
BCR430UW6Q-7 |
Hersteller: DIODES INCORPORATED
Category: LED drivers
Description: IC: driver; single transistor; current regulator,LED driver
Mounting: SMD
Case: SOT26
Operating temperature: -55...150°C
Application: automotive industry
Operating voltage: 1.4...40V
Integrated circuit features: linear dimming; PWM
Kind of integrated circuit: current regulator; LED driver
Topology: single transistor
Output current: 10...350mA
Type of integrated circuit: driver
Number of channels: 1
Category: LED drivers
Description: IC: driver; single transistor; current regulator,LED driver
Mounting: SMD
Case: SOT26
Operating temperature: -55...150°C
Application: automotive industry
Operating voltage: 1.4...40V
Integrated circuit features: linear dimming; PWM
Kind of integrated circuit: current regulator; LED driver
Topology: single transistor
Output current: 10...350mA
Type of integrated circuit: driver
Number of channels: 1
Produkt ist nicht verfügbar
74AUP1G17FW5-7 |
Hersteller: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer; Ch: 1; CMOS; SMD; X1-DFN1010-6; 0.8÷3.6VDC; AUP
Type of integrated circuit: digital
Case: X1-DFN1010-6
Mounting: SMD
Supply voltage: 0.8...3.6V DC
Operating temperature: -40...150°C
Family: AUP
Kind of package: reel; tape
Kind of output: push-pull
Kind of input: with Schmitt trigger
Technology: CMOS
Kind of integrated circuit: buffer
Number of channels: 1
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer; Ch: 1; CMOS; SMD; X1-DFN1010-6; 0.8÷3.6VDC; AUP
Type of integrated circuit: digital
Case: X1-DFN1010-6
Mounting: SMD
Supply voltage: 0.8...3.6V DC
Operating temperature: -40...150°C
Family: AUP
Kind of package: reel; tape
Kind of output: push-pull
Kind of input: with Schmitt trigger
Technology: CMOS
Kind of integrated circuit: buffer
Number of channels: 1
Produkt ist nicht verfügbar
74AUP1G17FZ4-7 |
Hersteller: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer; Ch: 1; CMOS; SMD; X2-DFN1410-6; 0.8÷3.6VDC; AUP
Type of integrated circuit: digital
Case: X2-DFN1410-6
Mounting: SMD
Supply voltage: 0.8...3.6V DC
Operating temperature: -40...150°C
Family: AUP
Kind of package: reel; tape
Kind of output: push-pull
Kind of input: with Schmitt trigger
Technology: CMOS
Kind of integrated circuit: buffer
Number of channels: 1
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer; Ch: 1; CMOS; SMD; X2-DFN1410-6; 0.8÷3.6VDC; AUP
Type of integrated circuit: digital
Case: X2-DFN1410-6
Mounting: SMD
Supply voltage: 0.8...3.6V DC
Operating temperature: -40...150°C
Family: AUP
Kind of package: reel; tape
Kind of output: push-pull
Kind of input: with Schmitt trigger
Technology: CMOS
Kind of integrated circuit: buffer
Number of channels: 1
Produkt ist nicht verfügbar
74AUP1G17SE-7 |
Hersteller: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; SMD; SOT353; AUP; 0.9uA
Mounting: SMD
Kind of package: reel; tape
Case: SOT353
Manufacturer series: AUP
Type of integrated circuit: digital
Number of channels: 1
Quiescent current: 0.9µA
Kind of output: push-pull
Supply voltage: 0.8...3.6V DC
Operating temperature: -40...125°C
Kind of input: with Schmitt trigger
Kind of integrated circuit: buffer; non-inverting
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; SMD; SOT353; AUP; 0.9uA
Mounting: SMD
Kind of package: reel; tape
Case: SOT353
Manufacturer series: AUP
Type of integrated circuit: digital
Number of channels: 1
Quiescent current: 0.9µA
Kind of output: push-pull
Supply voltage: 0.8...3.6V DC
Operating temperature: -40...125°C
Kind of input: with Schmitt trigger
Kind of integrated circuit: buffer; non-inverting
auf Bestellung 2378 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
329+ | 0.22 EUR |
363+ | 0.2 EUR |
404+ | 0.18 EUR |
455+ | 0.16 EUR |
500+ | 0.14 EUR |
APX811-40UG-7 |
Hersteller: DIODES INCORPORATED
Category: Watchdog and reset circuits
Description: IC: Supervisor Integrated Circuit; push-pull; 1.1÷5.5VDC; SOT143
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Type of integrated circuit: Supervisor Integrated Circuit
Delay time: 200ms
Maximum output current: 20mA
Active logical level: low
Kind of RESET output: push-pull
Integrated circuit features: manual reset
Threshold on-voltage: 4V
Kind of integrated circuit: power on reset monitor (PoR)
Case: SOT143
DC supply current: 30µA
Supply voltage: 1.1...5.5V DC
Category: Watchdog and reset circuits
Description: IC: Supervisor Integrated Circuit; push-pull; 1.1÷5.5VDC; SOT143
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Type of integrated circuit: Supervisor Integrated Circuit
Delay time: 200ms
Maximum output current: 20mA
Active logical level: low
Kind of RESET output: push-pull
Integrated circuit features: manual reset
Threshold on-voltage: 4V
Kind of integrated circuit: power on reset monitor (PoR)
Case: SOT143
DC supply current: 30µA
Supply voltage: 1.1...5.5V DC
Produkt ist nicht verfügbar
APX811-44UG-7 |
Hersteller: DIODES INCORPORATED
Category: Watchdog and reset circuits
Description: IC: Supervisor Integrated Circuit; push-pull; 1.1÷5.5VDC; SOT143
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Type of integrated circuit: Supervisor Integrated Circuit
Delay time: 200ms
Maximum output current: 20mA
Active logical level: low
Kind of RESET output: push-pull
Integrated circuit features: manual reset
Threshold on-voltage: 4.38V
Kind of integrated circuit: power on reset monitor (PoR)
Case: SOT143
DC supply current: 30µA
Supply voltage: 1.1...5.5V DC
Category: Watchdog and reset circuits
Description: IC: Supervisor Integrated Circuit; push-pull; 1.1÷5.5VDC; SOT143
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Type of integrated circuit: Supervisor Integrated Circuit
Delay time: 200ms
Maximum output current: 20mA
Active logical level: low
Kind of RESET output: push-pull
Integrated circuit features: manual reset
Threshold on-voltage: 4.38V
Kind of integrated circuit: power on reset monitor (PoR)
Case: SOT143
DC supply current: 30µA
Supply voltage: 1.1...5.5V DC
Produkt ist nicht verfügbar
APX811-46UG-7 |
Hersteller: DIODES INCORPORATED
Category: Watchdog and reset circuits
Description: IC: Supervisor Integrated Circuit; push-pull; 1.1÷5.5VDC; SOT143
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Type of integrated circuit: Supervisor Integrated Circuit
Delay time: 200ms
Maximum output current: 20mA
Active logical level: low
Kind of RESET output: push-pull
Integrated circuit features: manual reset
Threshold on-voltage: 4.63V
Kind of integrated circuit: power on reset monitor (PoR)
Case: SOT143
DC supply current: 30µA
Supply voltage: 1.1...5.5V DC
Category: Watchdog and reset circuits
Description: IC: Supervisor Integrated Circuit; push-pull; 1.1÷5.5VDC; SOT143
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Type of integrated circuit: Supervisor Integrated Circuit
Delay time: 200ms
Maximum output current: 20mA
Active logical level: low
Kind of RESET output: push-pull
Integrated circuit features: manual reset
Threshold on-voltage: 4.63V
Kind of integrated circuit: power on reset monitor (PoR)
Case: SOT143
DC supply current: 30µA
Supply voltage: 1.1...5.5V DC
Produkt ist nicht verfügbar
74AHCT1G00SE-7 |
Hersteller: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 2; CMOS,TTL; SMD; SOT353; 4.5÷5.5VDC
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: 1
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: SOT353
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Kind of output: totem pole
Family: AHCT
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 2; CMOS,TTL; SMD; SOT353; 4.5÷5.5VDC
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: 1
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: SOT353
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Kind of output: totem pole
Family: AHCT
Produkt ist nicht verfügbar
74AHCT1G00W5-7 |
Hersteller: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 2; CMOS,TTL; SMD; SOT25; 4.5÷5.5VDC; AHCT
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: 1
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: SOT25
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Kind of output: totem pole
Family: AHCT
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 2; CMOS,TTL; SMD; SOT25; 4.5÷5.5VDC; AHCT
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: 1
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: SOT25
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Kind of output: totem pole
Family: AHCT
Produkt ist nicht verfügbar
SMCJ120A-13-F |
Hersteller: DIODES INCORPORATED
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 133÷147V; 7.9A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 120V
Breakdown voltage: 133...147V
Max. forward impulse current: 7.9A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 133÷147V; 7.9A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 120V
Breakdown voltage: 133...147V
Max. forward impulse current: 7.9A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
SMCJ120CA-13-F |
Hersteller: DIODES INCORPORATED
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 133÷147V; 7.9A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 120V
Breakdown voltage: 133...147V
Max. forward impulse current: 7.9A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 133÷147V; 7.9A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 120V
Breakdown voltage: 133...147V
Max. forward impulse current: 7.9A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
SMCJ12A-13-F |
Hersteller: DIODES INCORPORATED
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 13.3÷14.7V; 75.3A; unidirectional; SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 12V
Breakdown voltage: 13.3...14.7V
Max. forward impulse current: 75.3A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 13.3÷14.7V; 75.3A; unidirectional; SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 12V
Breakdown voltage: 13.3...14.7V
Max. forward impulse current: 75.3A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar