Produkte > DIODES INCORPORATED > Alle Produkte des Herstellers DIODES INCORPORATED (75524) > Seite 1214 nach 1259
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1SMB5947B-13 | DIODES INCORPORATED |
 Category: SMD Zener diodesDescription: Diode: Zener; 3W; 82V; SMD; reel,tape; SMB; single diode; 1uA Type of diode: Zener Power dissipation: 3W Zener voltage: 82V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SMB Semiconductor structure: single diode Leakage current: 1µA |
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1SMB5948B-13 | DIODES INCORPORATED |
Category: SMD Zener diodes Description: Diode: Zener; 3W; 91V; SMD; reel,tape; SMB; single diode; 1uA Type of diode: Zener Power dissipation: 3W Zener voltage: 91V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SMB Semiconductor structure: single diode Leakage current: 1µA |
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1SMB5949B-13 | DIODES INCORPORATED |
Category: SMD Zener diodes Description: Diode: Zener; 3W; 100V; SMD; reel,tape; SMB; single diode; 1uA Kind of package: reel; tape Semiconductor structure: single diode Zener voltage: 100V Leakage current: 1µA Power dissipation: 3W Type of diode: Zener Mounting: SMD Case: SMB Tolerance: ±5% |
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1SMB5951B-13 | DIODES INCORPORATED |
Category: SMD Zener diodes Description: Diode: Zener; 3W; 110V; SMD; reel,tape; SMB; single diode; 1uA Type of diode: Zener Power dissipation: 3W Zener voltage: 110V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SMB Semiconductor structure: single diode Leakage current: 1µA |
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FZT956TA | DIODES INCORPORATED |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 200V; 2A; 3W; SOT223 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 200V Collector current: 2A Power dissipation: 3W Case: SOT223 Mounting: SMD Kind of package: reel; tape |
auf Bestellung 876 Stücke: Lieferzeit 14-21 Tag (e) |
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| SBR1045SP5-13 | DIODES INCORPORATED |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SBR®; SMD; 45V; 10A; PowerDI®5 Type of diode: Schottky rectifying Technology: SBR® Mounting: SMD Max. off-state voltage: 45V Load current: 10A Semiconductor structure: single diode Capacitance: 500F Case: PowerDI®5 Kind of package: reel; tape Max. forward impulse current: 180A Max. forward voltage: 0.55V |
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SMAJ36A-13-F | DIODES INCORPORATED |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 400W; 40÷44.2V; 6.9A; unidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 36V Breakdown voltage: 40...44.2V Max. forward impulse current: 6.9A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
auf Bestellung 1400 Stücke: Lieferzeit 14-21 Tag (e) |
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SBRT5A50SA-13 | DIODES INCORPORATED |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 50V; 5A; SMA; Ufmax: 0.46V; Ifsm: 70A; Ir: 7mA Type of diode: rectifying Mounting: SMD Max. off-state voltage: 50V Load current: 5A Semiconductor structure: single diode Case: SMA Max. forward voltage: 0.46V Max. forward impulse current: 70A Leakage current: 7mA Kind of package: reel; tape |
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| SBRT10U50SP5-13D | DIODES INCORPORATED |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 50V; 10A; PowerDI®5; Ufmax: 0.4V; Ifsm: 320A Kind of package: reel; tape Max. off-state voltage: 50V Max. forward voltage: 0.4V Load current: 10A Semiconductor structure: single diode Max. forward impulse current: 320A Leakage current: 29mA Type of diode: rectifying Mounting: SMD Case: PowerDI®5 |
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| SBRT15U50SP5-13 | DIODES INCORPORATED |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; Trench SBR®; SMD; 50V; 15A; PowerDI®5 Type of diode: Schottky rectifying Technology: Trench SBR® Mounting: SMD Max. off-state voltage: 50V Load current: 15A Semiconductor structure: single diode Max. forward voltage: 0.47V Case: PowerDI®5 Kind of package: reel; tape Max. forward impulse current: 290A |
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AZV393MMTR-G1 | DIODES INCORPORATED |
Category: SMD comparators Description: IC: comparator; low-power; Cmp: 2; 2.5÷5.5V; SMT; MSOP8; reel,tape Operating voltage: 2.5...5.5V Mounting: SMT Case: MSOP8 Operating temperature: -40...85°C Type of integrated circuit: comparator Number of comparators: 2 Input offset voltage: 9mV Kind of output: open collector Kind of package: reel; tape Kind of comparator: low-power Input offset current: 150nA |
auf Bestellung 783 Stücke: Lieferzeit 14-21 Tag (e) |
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AZV393MTR-G1 | DIODES INCORPORATED |
Category: SMD comparators Description: IC: comparator; low-power; Cmp: 2; 2.5÷5.5V; SMT; SO8; reel,tape Operating voltage: 2.5...5.5V Mounting: SMT Case: SO8 Operating temperature: -40...85°C Type of integrated circuit: comparator Number of comparators: 2 Input offset voltage: 9mV Kind of output: open collector Kind of package: reel; tape Kind of comparator: low-power Input offset current: 150nA |
auf Bestellung 181 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMT10H009SPS-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 11A; Idm: 320A; 2.7W Mounting: SMD Case: PowerDI5060-8 Type of transistor: N-MOSFET On-state resistance: 8.5mΩ Drain current: 11A Power dissipation: 2.7W Polarisation: unipolar Kind of package: reel; tape Gate charge: 30nC Drain-source voltage: 100V Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 320A |
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| SMBJ60A-13-F | DIODES INCORPORATED |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 600W; 66.7÷76.7V; 6.2A; unidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 60V Breakdown voltage: 66.7...76.7V Max. forward impulse current: 6.2A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
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ZXMN2A01FTA | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 1.9A; Idm: 8A; 0.625W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 1.9A Pulsed drain current: 8A Power dissipation: 0.625W Case: SOT23 Gate-source voltage: ±12V On-state resistance: 0.12Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
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ZXMN2A03E6TA | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 3.4A; 1.1W; SOT26 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 3.4A Power dissipation: 1.1W Case: SOT26 Gate-source voltage: ±12V On-state resistance: 0.1Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
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ZXMN2A14FTA | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 3.3A; 1W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 3.3A Power dissipation: 1W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 60mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
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ZMR500FTA | DIODES INCORPORATED |
Category: LDO unregulated voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.05A; SOT23; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.005V Output voltage: 5V Output current: 50mA Case: SOT23 Mounting: SMD Kind of package: reel; tape Operating temperature: -50...125°C Number of channels: 1 Input voltage: 7...25V Manufacturer series: ZMR |
auf Bestellung 2575 Stücke: Lieferzeit 14-21 Tag (e) |
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ZSR500GTA | DIODES INCORPORATED |
Category: Unregulated voltage regulators Description: IC: voltage regulator; linear,fixed; 5V; 0.2A; SOT223; SMD; ±2.5% Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; linear Output voltage: 5V Output current: 0.2A Case: SOT223 Mounting: SMD Kind of package: reel; tape Operating temperature: -55...125°C Tolerance: ±2.5% Number of channels: 1 Input voltage: 7...20V Manufacturer series: ZSR |
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| DMN1019UFDE-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 12V; 5A; 0.69W; U-DFN2020-6 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 12V Drain current: 5A Power dissipation: 0.69W Case: U-DFN2020-6 Gate-source voltage: ±8V On-state resistance: 41mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
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| DMN1019USN-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 12V; 8.8A; Idm: 70A; 830mW; SC59 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 12V Drain current: 8.8A Pulsed drain current: 70A Power dissipation: 0.83W Case: SC59 Gate-source voltage: ±8V On-state resistance: 41mΩ Mounting: SMD Gate charge: 50.6nC Kind of package: reel; tape Kind of channel: enhanced |
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DMN1019UVT-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 12V; 10.1A; Idm: 70A; 1.11W; TSOT26 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 12V Drain current: 10.1A Pulsed drain current: 70A Power dissipation: 1.11W Case: TSOT26 Gate-source voltage: ±8V On-state resistance: 41mΩ Mounting: SMD Gate charge: 50.4nC Kind of package: reel; tape Kind of channel: enhanced |
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DMN1019UVT-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 12V; 10.1A; Idm: 70A; 1.11W; TSOT26 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 12V Drain current: 10.1A Pulsed drain current: 70A Power dissipation: 1.11W Case: TSOT26 Gate-source voltage: ±8V On-state resistance: 41mΩ Mounting: SMD Gate charge: 50.4nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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LMV358M8G-13 | DIODES INCORPORATED |
Category: SMD operational amplifiers Description: IC: operational amplifier; 1MHz; 2.7÷5.5V; Ch: 2; MSOP8; reel,tape Type of integrated circuit: operational amplifier Bandwidth: 1MHz Open-loop gain: 10dB Mounting: SMT Number of channels: 2 Case: MSOP8 Slew rate: 1V/μs Operating temperature: -40...125°C Input offset voltage: 7mV Kind of package: reel; tape Operating voltage: 2.7...5.5V |
auf Bestellung 334 Stücke: Lieferzeit 14-21 Tag (e) |
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FZT688BTA | DIODES INCORPORATED |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 12V; 4A; 3W; SOT223 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 12V Collector current: 4A Power dissipation: 3W Case: SOT223 Mounting: SMD Kind of package: reel; tape Frequency: 150MHz |
auf Bestellung 226 Stücke: Lieferzeit 14-21 Tag (e) |
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SMAJ20A-13-F | DIODES INCORPORATED |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 400W; 22.2÷24.5V; 12.3A; unidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 20V Breakdown voltage: 22.2...24.5V Max. forward impulse current: 12.3A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
auf Bestellung 875 Stücke: Lieferzeit 14-21 Tag (e) |
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FZT600TA | DIODES INCORPORATED |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 140V; 2A; 3W; SOT223 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 140V Collector current: 2A Power dissipation: 3W Case: SOT223 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz |
auf Bestellung 96 Stücke: Lieferzeit 14-21 Tag (e) |
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FZT603TA | DIODES INCORPORATED |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 80V; 2A; 3W; SOT223 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 2A Power dissipation: 3W Case: SOT223 Mounting: SMD Kind of package: reel; tape Frequency: 150MHz |
Produkt ist nicht verfügbar |
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FZT605TA | DIODES INCORPORATED |
Category: NPN SMD Darlington transistors Description: Transistor: NPN; bipolar; Darlington; 120V; 1.5A; 1.2W; SOT223 Type of transistor: NPN Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 120V Collector current: 1.5A Power dissipation: 1.2W Case: SOT223 Current gain: 2000...100000 Mounting: SMD Kind of package: reel; tape Frequency: 150MHz |
auf Bestellung 598 Stücke: Lieferzeit 14-21 Tag (e) |
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FZT651QTA | DIODES INCORPORATED |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 60V; 3A; 3W; SOT223; automotive industry Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 3A Power dissipation: 3W Case: SOT223 Mounting: SMD Kind of package: reel; tape Frequency: 175MHz Application: automotive industry |
auf Bestellung 670 Stücke: Lieferzeit 14-21 Tag (e) |
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FZT655TA | DIODES INCORPORATED |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 150V; 1A; 3W; SOT223 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 150V Collector current: 1A Power dissipation: 3W Case: SOT223 Mounting: SMD Kind of package: reel; tape Frequency: 30MHz |
auf Bestellung 132 Stücke: Lieferzeit 14-21 Tag (e) |
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FZT658TA | DIODES INCORPORATED |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 400V; 0.5A; 1.2W; SOT223 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 400V Collector current: 0.5A Power dissipation: 1.2W Case: SOT223 Mounting: SMD Kind of package: reel; tape Frequency: 50MHz |
auf Bestellung 268 Stücke: Lieferzeit 14-21 Tag (e) |
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FZT689BTA | DIODES INCORPORATED |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 20V; 4A; 3W; SOT223 Mounting: SMD Case: SOT223 Kind of package: reel; tape Collector current: 4A Type of transistor: NPN Power dissipation: 3W Polarisation: bipolar Frequency: 150MHz Collector-emitter voltage: 20V |
auf Bestellung 546 Stücke: Lieferzeit 14-21 Tag (e) |
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FZT690BTA | DIODES INCORPORATED |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 45V; 3A; 3W; SOT223 Mounting: SMD Collector-emitter voltage: 45V Case: SOT223 Collector current: 3A Kind of package: reel; tape Frequency: 150MHz Power dissipation: 3W Polarisation: bipolar Type of transistor: NPN |
auf Bestellung 1276 Stücke: Lieferzeit 14-21 Tag (e) |
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FZT692BTA | DIODES INCORPORATED |
 Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 70V; 2A; 1.2W; SOT223 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 70V Collector current: 2A Power dissipation: 1.2W Case: SOT223 Mounting: SMD Kind of package: reel; tape Frequency: 150MHz |
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FZT696BTA | DIODES INCORPORATED |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 180V; 500mA; 3W; SOT223 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 180V Collector current: 0.5A Power dissipation: 3W Case: SOT223 Mounting: SMD Kind of package: reel; tape Frequency: 130MHz |
auf Bestellung 995 Stücke: Lieferzeit 14-21 Tag (e) |
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ZTX651 | DIODES INCORPORATED |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 60V; 2A; 1.5W; TO92 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 2A Power dissipation: 1.5W Case: TO92 Current gain: 40...300 Mounting: THT Kind of package: bulk Frequency: 175MHz |
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ZTX653 | DIODES INCORPORATED |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 100V; 2A; 1W; TO92 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 2A Power dissipation: 1W Case: TO92 Mounting: THT Kind of package: bulk Frequency: 175MHz |
auf Bestellung 3444 Stücke: Lieferzeit 14-21 Tag (e) |
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ZTX653STZ | DIODES INCORPORATED |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 100V; 2A; 1W; TO92 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 2A Power dissipation: 1W Case: TO92 Mounting: THT Kind of package: bulk Frequency: 175MHz |
auf Bestellung 1743 Stücke: Lieferzeit 14-21 Tag (e) |
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DMG6402LDM-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 4.2A; Idm: 31A; 1.12W; SOT26 On-state resistance: 40mΩ Mounting: SMD Case: SOT26 Drain-source voltage: 30V Drain current: 4.2A Type of transistor: N-MOSFET Power dissipation: 1.12W Polarisation: unipolar Kind of package: reel; tape Gate charge: 9.2nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 31A |
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DMG6402LVT-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 5A; 1.1W; TSOT26 On-state resistance: 42mΩ Mounting: SMD Case: TSOT26 Drain-source voltage: 30V Drain current: 5A Type of transistor: N-MOSFET Power dissipation: 1.1W Polarisation: unipolar Kind of package: reel; tape Kind of channel: enhanced Gate-source voltage: ±20V |
auf Bestellung 2730 Stücke: Lieferzeit 14-21 Tag (e) |
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ZTL432AFTA | DIODES INCORPORATED |
Category: Reference voltage sources - circuits Description: IC: voltage reference source; 2.5V; ±1%; SOT23; reel,tape; 100mA Type of integrated circuit: voltage reference source Reference voltage: 2.5V Tolerance: ±1% Mounting: SMD Case: SOT23 Operating temperature: -40...125°C Kind of package: reel; tape Maximum output current: 0.1A Operating voltage: 2.5...20V |
auf Bestellung 2409 Stücke: Lieferzeit 14-21 Tag (e) |
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ZTL432AQFTA | DIODES INCORPORATED |
Category: Reference voltage sources - circuits Description: IC: voltage reference source; 2.5V; ±1%; SOT23; reel,tape; 100mA Type of integrated circuit: voltage reference source Reference voltage: 2.5V Tolerance: ±1% Mounting: SMD Case: SOT23 Operating temperature: -40...125°C Kind of package: reel; tape Maximum output current: 0.1A Application: automotive industry Operating voltage: 2.5...20V |
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| ZTL432BFFTA | DIODES INCORPORATED |
Category: Reference voltage sources - circuits Description: IC: voltage reference source; 2.5V; ±0.5%; SOT23F; reel,tape Type of integrated circuit: voltage reference source Reference voltage: 2.5V Tolerance: ±0.5% Mounting: SMD Case: SOT23F Operating temperature: -40...125°C Kind of package: reel; tape Maximum output current: 0.1A Operating voltage: 2.5...20V |
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SMAJ54CA-13-F | DIODES INCORPORATED |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 400W; 60÷66.3V; 4.6A; bidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 54V Breakdown voltage: 60...66.3V Max. forward impulse current: 4.6A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
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SMAJ58CA-13-F | DIODES INCORPORATED |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 400W; 64.4÷71.2V; 4.3A; bidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 58V Breakdown voltage: 64.4...71.2V Max. forward impulse current: 4.3A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
auf Bestellung 1200 Stücke: Lieferzeit 14-21 Tag (e) |
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BZX84C15-13-F | DIODES INCORPORATED |
Category: SMD Zener diodes Description: Diode: Zener; 0.35W; 15V; SMD; reel,tape; SOT23; single diode Type of diode: Zener Power dissipation: 0.35W Zener voltage: 15V Mounting: SMD Tolerance: ±6% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode |
auf Bestellung 8440 Stücke: Lieferzeit 14-21 Tag (e) |
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BZX84C15-7-F | DIODES INCORPORATED |
Category: SMD Zener diodes Description: Diode: Zener; 0.35W; 15V; SMD; reel,tape; SOT23; single diode Type of diode: Zener Power dissipation: 0.35W Zener voltage: 15V Mounting: SMD Tolerance: ±6% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode |
auf Bestellung 400 Stücke: Lieferzeit 14-21 Tag (e) |
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BZX84C15Q-13-F | DIODES INCORPORATED |
Category: SMD Zener diodes Description: Diode: Zener; 0.35W; 15V; SMD; reel,tape; SOT23; single diode Type of diode: Zener Power dissipation: 0.35W Zener voltage: 15V Mounting: SMD Tolerance: ±6% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode Application: automotive industry |
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BZX84C15Q-7-F | DIODES INCORPORATED |
Category: SMD Zener diodes Description: Diode: Zener; 0.35W; 15V; SMD; reel,tape; SOT23; single diode Type of diode: Zener Power dissipation: 0.35W Zener voltage: 15V Mounting: SMD Tolerance: ±6% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode Application: automotive industry |
Produkt ist nicht verfügbar |
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BZX84C15S-7-F | DIODES INCORPORATED |
Category: SMD Zener diodes Description: Diode: Zener; 0.2W; 15V; SMD; reel,tape; SOT363; double independent Type of diode: Zener Power dissipation: 0.2W Zener voltage: 15V Mounting: SMD Tolerance: ±6% Kind of package: reel; tape Case: SOT363 Semiconductor structure: double independent |
Produkt ist nicht verfügbar |
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BZX84C15W-7-F | DIODES INCORPORATED |
Category: SMD Zener diodes Description: Diode: Zener; 0.2W; 15V; SMD; reel,tape; SOT323; single diode Type of diode: Zener Power dissipation: 0.2W Zener voltage: 15V Mounting: SMD Tolerance: ±6% Kind of package: reel; tape Case: SOT323 Semiconductor structure: single diode |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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| AP2152MPG-13 | DIODES INCORPORATED |
Category: Power switches - integrated circuits Description: IC: power switch; high-side,USB switch; 0.5A; Ch: 2; P-Channel; SMD Kind of integrated circuit: high-side; USB switch Mounting: SMD Case: MSOP8EP Supply voltage: 2.7...5.5V DC On-state resistance: 0.115Ω Output current: 0.5A Type of integrated circuit: power switch Number of channels: 2 Kind of output: P-Channel Active logical level: high Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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| DMT3020LFDB-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 6.2A; Idm: 50A; 1.8W Case: U-DFN2020-6 Mounting: SMD Power dissipation: 1.8W Kind of package: reel; tape Gate charge: 7nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 50A Polarisation: unipolar Drain-source voltage: 30V Drain current: 6.2A On-state resistance: 32mΩ Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |
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| DMT3020LFDB-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 6.2A; Idm: 50A; 1.8W Case: U-DFN2020-6 Mounting: SMD Power dissipation: 1.8W Kind of package: reel; tape Gate charge: 7nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 50A Polarisation: unipolar Drain-source voltage: 30V Drain current: 6.2A On-state resistance: 32mΩ Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |
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| DMT3020LFDBQ-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 6.2A; Idm: 50A; 1.8W Case: U-DFN2020-6 Mounting: SMD Application: automotive industry Power dissipation: 1.8W Kind of package: reel; tape Gate charge: 7nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 50A Polarisation: unipolar Drain-source voltage: 30V Drain current: 6.2A On-state resistance: 32mΩ Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |
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| DMT3020LFDF-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 5.4A; Idm: 40A; 1.1W Case: U-DFN2020-6 Mounting: SMD Power dissipation: 1.1W Kind of package: reel; tape Gate charge: 7nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 40A Polarisation: unipolar Drain-source voltage: 30V Drain current: 5.4A On-state resistance: 28mΩ Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |
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| DMT3020LFDF-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 5.4A; Idm: 40A; 1.1W Case: U-DFN2020-6 Mounting: SMD Power dissipation: 1.1W Kind of package: reel; tape Gate charge: 7nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 40A Polarisation: unipolar Drain-source voltage: 30V Drain current: 5.4A On-state resistance: 28mΩ Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |
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| DMT3020LFDFQ-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 6.7A; Idm: 40A; 0.4W Case: U-DFN2020-6 Mounting: SMD Application: automotive industry Power dissipation: 0.4W Kind of package: reel; tape Gate charge: 7nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 40A Polarisation: unipolar Drain-source voltage: 30V Drain current: 6.7A On-state resistance: 28mΩ Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |
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| DMT3020LFDFQ-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 5.4A; Idm: 40A; 1.1W Case: U-DFN2020-6 Mounting: SMD Application: automotive industry Power dissipation: 1.1W Kind of package: reel; tape Gate charge: 7nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 40A Polarisation: unipolar Drain-source voltage: 30V Drain current: 5.4A On-state resistance: 28mΩ Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |
| 1SMB5947B-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 82V; SMD; reel,tape; SMB; single diode; 1uA
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 82V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Leakage current: 1µA
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 82V; SMD; reel,tape; SMB; single diode; 1uA
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 82V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Leakage current: 1µA
Produkt ist nicht verfügbar
| 1SMB5948B-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 91V; SMD; reel,tape; SMB; single diode; 1uA
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 91V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Leakage current: 1µA
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 91V; SMD; reel,tape; SMB; single diode; 1uA
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 91V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Leakage current: 1µA
Produkt ist nicht verfügbar
| 1SMB5949B-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 100V; SMD; reel,tape; SMB; single diode; 1uA
Kind of package: reel; tape
Semiconductor structure: single diode
Zener voltage: 100V
Leakage current: 1µA
Power dissipation: 3W
Type of diode: Zener
Mounting: SMD
Case: SMB
Tolerance: ±5%
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 100V; SMD; reel,tape; SMB; single diode; 1uA
Kind of package: reel; tape
Semiconductor structure: single diode
Zener voltage: 100V
Leakage current: 1µA
Power dissipation: 3W
Type of diode: Zener
Mounting: SMD
Case: SMB
Tolerance: ±5%
Produkt ist nicht verfügbar
| 1SMB5951B-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 110V; SMD; reel,tape; SMB; single diode; 1uA
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 110V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Leakage current: 1µA
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 110V; SMD; reel,tape; SMB; single diode; 1uA
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 110V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Leakage current: 1µA
Produkt ist nicht verfügbar
| FZT956TA |
|
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 200V; 2A; 3W; SOT223
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 200V
Collector current: 2A
Power dissipation: 3W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 200V; 2A; 3W; SOT223
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 200V
Collector current: 2A
Power dissipation: 3W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
auf Bestellung 876 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 63+ | 1.14 EUR |
| 82+ | 0.87 EUR |
| 95+ | 0.76 EUR |
| 110+ | 0.65 EUR |
| 116+ | 0.62 EUR |
| SBR1045SP5-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SBR®; SMD; 45V; 10A; PowerDI®5
Type of diode: Schottky rectifying
Technology: SBR®
Mounting: SMD
Max. off-state voltage: 45V
Load current: 10A
Semiconductor structure: single diode
Capacitance: 500F
Case: PowerDI®5
Kind of package: reel; tape
Max. forward impulse current: 180A
Max. forward voltage: 0.55V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SBR®; SMD; 45V; 10A; PowerDI®5
Type of diode: Schottky rectifying
Technology: SBR®
Mounting: SMD
Max. off-state voltage: 45V
Load current: 10A
Semiconductor structure: single diode
Capacitance: 500F
Case: PowerDI®5
Kind of package: reel; tape
Max. forward impulse current: 180A
Max. forward voltage: 0.55V
Produkt ist nicht verfügbar
| SMAJ36A-13-F |
|
Hersteller: DIODES INCORPORATED
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 400W; 40÷44.2V; 6.9A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 6.9A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 400W; 40÷44.2V; 6.9A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 6.9A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 1400 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 295+ | 0.24 EUR |
| 610+ | 0.12 EUR |
| 680+ | 0.11 EUR |
| 885+ | 0.081 EUR |
| 935+ | 0.076 EUR |
| SBRT5A50SA-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 50V; 5A; SMA; Ufmax: 0.46V; Ifsm: 70A; Ir: 7mA
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 50V
Load current: 5A
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 0.46V
Max. forward impulse current: 70A
Leakage current: 7mA
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 50V; 5A; SMA; Ufmax: 0.46V; Ifsm: 70A; Ir: 7mA
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 50V
Load current: 5A
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 0.46V
Max. forward impulse current: 70A
Leakage current: 7mA
Kind of package: reel; tape
Produkt ist nicht verfügbar
| SBRT10U50SP5-13D |
|
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 50V; 10A; PowerDI®5; Ufmax: 0.4V; Ifsm: 320A
Kind of package: reel; tape
Max. off-state voltage: 50V
Max. forward voltage: 0.4V
Load current: 10A
Semiconductor structure: single diode
Max. forward impulse current: 320A
Leakage current: 29mA
Type of diode: rectifying
Mounting: SMD
Case: PowerDI®5
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 50V; 10A; PowerDI®5; Ufmax: 0.4V; Ifsm: 320A
Kind of package: reel; tape
Max. off-state voltage: 50V
Max. forward voltage: 0.4V
Load current: 10A
Semiconductor structure: single diode
Max. forward impulse current: 320A
Leakage current: 29mA
Type of diode: rectifying
Mounting: SMD
Case: PowerDI®5
Produkt ist nicht verfügbar
| SBRT15U50SP5-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; Trench SBR®; SMD; 50V; 15A; PowerDI®5
Type of diode: Schottky rectifying
Technology: Trench SBR®
Mounting: SMD
Max. off-state voltage: 50V
Load current: 15A
Semiconductor structure: single diode
Max. forward voltage: 0.47V
Case: PowerDI®5
Kind of package: reel; tape
Max. forward impulse current: 290A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; Trench SBR®; SMD; 50V; 15A; PowerDI®5
Type of diode: Schottky rectifying
Technology: Trench SBR®
Mounting: SMD
Max. off-state voltage: 50V
Load current: 15A
Semiconductor structure: single diode
Max. forward voltage: 0.47V
Case: PowerDI®5
Kind of package: reel; tape
Max. forward impulse current: 290A
Produkt ist nicht verfügbar
| AZV393MMTR-G1 |
|
Hersteller: DIODES INCORPORATED
Category: SMD comparators
Description: IC: comparator; low-power; Cmp: 2; 2.5÷5.5V; SMT; MSOP8; reel,tape
Operating voltage: 2.5...5.5V
Mounting: SMT
Case: MSOP8
Operating temperature: -40...85°C
Type of integrated circuit: comparator
Number of comparators: 2
Input offset voltage: 9mV
Kind of output: open collector
Kind of package: reel; tape
Kind of comparator: low-power
Input offset current: 150nA
Category: SMD comparators
Description: IC: comparator; low-power; Cmp: 2; 2.5÷5.5V; SMT; MSOP8; reel,tape
Operating voltage: 2.5...5.5V
Mounting: SMT
Case: MSOP8
Operating temperature: -40...85°C
Type of integrated circuit: comparator
Number of comparators: 2
Input offset voltage: 9mV
Kind of output: open collector
Kind of package: reel; tape
Kind of comparator: low-power
Input offset current: 150nA
auf Bestellung 783 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 268+ | 0.27 EUR |
| 302+ | 0.24 EUR |
| 332+ | 0.22 EUR |
| 341+ | 0.21 EUR |
| 353+ | 0.2 EUR |
| AZV393MTR-G1 |
|
Hersteller: DIODES INCORPORATED
Category: SMD comparators
Description: IC: comparator; low-power; Cmp: 2; 2.5÷5.5V; SMT; SO8; reel,tape
Operating voltage: 2.5...5.5V
Mounting: SMT
Case: SO8
Operating temperature: -40...85°C
Type of integrated circuit: comparator
Number of comparators: 2
Input offset voltage: 9mV
Kind of output: open collector
Kind of package: reel; tape
Kind of comparator: low-power
Input offset current: 150nA
Category: SMD comparators
Description: IC: comparator; low-power; Cmp: 2; 2.5÷5.5V; SMT; SO8; reel,tape
Operating voltage: 2.5...5.5V
Mounting: SMT
Case: SO8
Operating temperature: -40...85°C
Type of integrated circuit: comparator
Number of comparators: 2
Input offset voltage: 9mV
Kind of output: open collector
Kind of package: reel; tape
Kind of comparator: low-power
Input offset current: 150nA
auf Bestellung 181 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 181+ | 0.4 EUR |
| DMT10H009SPS-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 11A; Idm: 320A; 2.7W
Mounting: SMD
Case: PowerDI5060-8
Type of transistor: N-MOSFET
On-state resistance: 8.5mΩ
Drain current: 11A
Power dissipation: 2.7W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 30nC
Drain-source voltage: 100V
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 320A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 11A; Idm: 320A; 2.7W
Mounting: SMD
Case: PowerDI5060-8
Type of transistor: N-MOSFET
On-state resistance: 8.5mΩ
Drain current: 11A
Power dissipation: 2.7W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 30nC
Drain-source voltage: 100V
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 320A
Produkt ist nicht verfügbar
| SMBJ60A-13-F |
|
Hersteller: DIODES INCORPORATED
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 66.7÷76.7V; 6.2A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 60V
Breakdown voltage: 66.7...76.7V
Max. forward impulse current: 6.2A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 66.7÷76.7V; 6.2A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 60V
Breakdown voltage: 66.7...76.7V
Max. forward impulse current: 6.2A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
| ZXMN2A01FTA |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.9A; Idm: 8A; 0.625W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1.9A
Pulsed drain current: 8A
Power dissipation: 0.625W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 0.12Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.9A; Idm: 8A; 0.625W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1.9A
Pulsed drain current: 8A
Power dissipation: 0.625W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 0.12Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| ZXMN2A03E6TA |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.4A; 1.1W; SOT26
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.4A
Power dissipation: 1.1W
Case: SOT26
Gate-source voltage: ±12V
On-state resistance: 0.1Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.4A; 1.1W; SOT26
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.4A
Power dissipation: 1.1W
Case: SOT26
Gate-source voltage: ±12V
On-state resistance: 0.1Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| ZXMN2A14FTA |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.3A; 1W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.3A
Power dissipation: 1W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.3A; 1W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.3A
Power dissipation: 1W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| ZMR500FTA |
|
Hersteller: DIODES INCORPORATED
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.05A; SOT23; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.005V
Output voltage: 5V
Output current: 50mA
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -50...125°C
Number of channels: 1
Input voltage: 7...25V
Manufacturer series: ZMR
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.05A; SOT23; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.005V
Output voltage: 5V
Output current: 50mA
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -50...125°C
Number of channels: 1
Input voltage: 7...25V
Manufacturer series: ZMR
auf Bestellung 2575 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 71+ | 1.02 EUR |
| 161+ | 0.45 EUR |
| 171+ | 0.42 EUR |
| ZSR500GTA |
|
Hersteller: DIODES INCORPORATED
Category: Unregulated voltage regulators
Description: IC: voltage regulator; linear,fixed; 5V; 0.2A; SOT223; SMD; ±2.5%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 5V
Output current: 0.2A
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -55...125°C
Tolerance: ±2.5%
Number of channels: 1
Input voltage: 7...20V
Manufacturer series: ZSR
Category: Unregulated voltage regulators
Description: IC: voltage regulator; linear,fixed; 5V; 0.2A; SOT223; SMD; ±2.5%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 5V
Output current: 0.2A
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -55...125°C
Tolerance: ±2.5%
Number of channels: 1
Input voltage: 7...20V
Manufacturer series: ZSR
Produkt ist nicht verfügbar
| DMN1019UFDE-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 12V; 5A; 0.69W; U-DFN2020-6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 12V
Drain current: 5A
Power dissipation: 0.69W
Case: U-DFN2020-6
Gate-source voltage: ±8V
On-state resistance: 41mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 12V; 5A; 0.69W; U-DFN2020-6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 12V
Drain current: 5A
Power dissipation: 0.69W
Case: U-DFN2020-6
Gate-source voltage: ±8V
On-state resistance: 41mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Produkt ist nicht verfügbar
| DMN1019USN-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 12V; 8.8A; Idm: 70A; 830mW; SC59
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 12V
Drain current: 8.8A
Pulsed drain current: 70A
Power dissipation: 0.83W
Case: SC59
Gate-source voltage: ±8V
On-state resistance: 41mΩ
Mounting: SMD
Gate charge: 50.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 12V; 8.8A; Idm: 70A; 830mW; SC59
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 12V
Drain current: 8.8A
Pulsed drain current: 70A
Power dissipation: 0.83W
Case: SC59
Gate-source voltage: ±8V
On-state resistance: 41mΩ
Mounting: SMD
Gate charge: 50.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| DMN1019UVT-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 12V; 10.1A; Idm: 70A; 1.11W; TSOT26
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 12V
Drain current: 10.1A
Pulsed drain current: 70A
Power dissipation: 1.11W
Case: TSOT26
Gate-source voltage: ±8V
On-state resistance: 41mΩ
Mounting: SMD
Gate charge: 50.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 12V; 10.1A; Idm: 70A; 1.11W; TSOT26
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 12V
Drain current: 10.1A
Pulsed drain current: 70A
Power dissipation: 1.11W
Case: TSOT26
Gate-source voltage: ±8V
On-state resistance: 41mΩ
Mounting: SMD
Gate charge: 50.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| DMN1019UVT-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 12V; 10.1A; Idm: 70A; 1.11W; TSOT26
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 12V
Drain current: 10.1A
Pulsed drain current: 70A
Power dissipation: 1.11W
Case: TSOT26
Gate-source voltage: ±8V
On-state resistance: 41mΩ
Mounting: SMD
Gate charge: 50.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 12V; 10.1A; Idm: 70A; 1.11W; TSOT26
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 12V
Drain current: 10.1A
Pulsed drain current: 70A
Power dissipation: 1.11W
Case: TSOT26
Gate-source voltage: ±8V
On-state resistance: 41mΩ
Mounting: SMD
Gate charge: 50.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| LMV358M8G-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; 2.7÷5.5V; Ch: 2; MSOP8; reel,tape
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Open-loop gain: 10dB
Mounting: SMT
Number of channels: 2
Case: MSOP8
Slew rate: 1V/μs
Operating temperature: -40...125°C
Input offset voltage: 7mV
Kind of package: reel; tape
Operating voltage: 2.7...5.5V
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; 2.7÷5.5V; Ch: 2; MSOP8; reel,tape
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Open-loop gain: 10dB
Mounting: SMT
Number of channels: 2
Case: MSOP8
Slew rate: 1V/μs
Operating temperature: -40...125°C
Input offset voltage: 7mV
Kind of package: reel; tape
Operating voltage: 2.7...5.5V
auf Bestellung 334 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 184+ | 0.39 EUR |
| 266+ | 0.27 EUR |
| 334+ | 0.21 EUR |
| FZT688BTA |
|
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 12V; 4A; 3W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 12V
Collector current: 4A
Power dissipation: 3W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 12V; 4A; 3W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 12V
Collector current: 4A
Power dissipation: 3W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
auf Bestellung 226 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 66+ | 1.09 EUR |
| 79+ | 0.91 EUR |
| 94+ | 0.77 EUR |
| 143+ | 0.5 EUR |
| 151+ | 0.47 EUR |
| SMAJ20A-13-F |
|
Hersteller: DIODES INCORPORATED
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 400W; 22.2÷24.5V; 12.3A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 20V
Breakdown voltage: 22.2...24.5V
Max. forward impulse current: 12.3A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 400W; 22.2÷24.5V; 12.3A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 20V
Breakdown voltage: 22.2...24.5V
Max. forward impulse current: 12.3A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 875 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 315+ | 0.23 EUR |
| 655+ | 0.11 EUR |
| 730+ | 0.098 EUR |
| 875+ | 0.082 EUR |
| FZT600TA |
|
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 140V; 2A; 3W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 140V
Collector current: 2A
Power dissipation: 3W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 140V; 2A; 3W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 140V
Collector current: 2A
Power dissipation: 3W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
auf Bestellung 96 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 81+ | 0.89 EUR |
| 96+ | 0.74 EUR |
| FZT603TA |
|
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 2A; 3W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 2A
Power dissipation: 3W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 2A; 3W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 2A
Power dissipation: 3W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
Produkt ist nicht verfügbar
| FZT605TA |
|
Hersteller: DIODES INCORPORATED
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 120V; 1.5A; 1.2W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 120V
Collector current: 1.5A
Power dissipation: 1.2W
Case: SOT223
Current gain: 2000...100000
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 120V; 1.5A; 1.2W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 120V
Collector current: 1.5A
Power dissipation: 1.2W
Case: SOT223
Current gain: 2000...100000
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
auf Bestellung 598 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 67+ | 1.07 EUR |
| 158+ | 0.45 EUR |
| 180+ | 0.4 EUR |
| 201+ | 0.36 EUR |
| 212+ | 0.34 EUR |
| 500+ | 0.33 EUR |
| FZT651QTA |
|
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 3A; 3W; SOT223; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 3A
Power dissipation: 3W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Frequency: 175MHz
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 3A; 3W; SOT223; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 3A
Power dissipation: 3W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Frequency: 175MHz
Application: automotive industry
auf Bestellung 670 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 150+ | 0.48 EUR |
| 177+ | 0.4 EUR |
| 196+ | 0.37 EUR |
| 231+ | 0.31 EUR |
| 243+ | 0.29 EUR |
| FZT655TA |
|
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 150V; 1A; 3W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 150V
Collector current: 1A
Power dissipation: 3W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Frequency: 30MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 150V; 1A; 3W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 150V
Collector current: 1A
Power dissipation: 3W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Frequency: 30MHz
auf Bestellung 132 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 122+ | 0.59 EUR |
| 132+ | 0.54 EUR |
| FZT658TA |
|
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 400V; 0.5A; 1.2W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 400V
Collector current: 0.5A
Power dissipation: 1.2W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 400V; 0.5A; 1.2W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 400V
Collector current: 0.5A
Power dissipation: 1.2W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
auf Bestellung 268 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 67+ | 1.07 EUR |
| 146+ | 0.49 EUR |
| 166+ | 0.43 EUR |
| 191+ | 0.38 EUR |
| 201+ | 0.36 EUR |
| FZT689BTA |
|
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 20V; 4A; 3W; SOT223
Mounting: SMD
Case: SOT223
Kind of package: reel; tape
Collector current: 4A
Type of transistor: NPN
Power dissipation: 3W
Polarisation: bipolar
Frequency: 150MHz
Collector-emitter voltage: 20V
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 20V; 4A; 3W; SOT223
Mounting: SMD
Case: SOT223
Kind of package: reel; tape
Collector current: 4A
Type of transistor: NPN
Power dissipation: 3W
Polarisation: bipolar
Frequency: 150MHz
Collector-emitter voltage: 20V
auf Bestellung 546 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 122+ | 0.59 EUR |
| 130+ | 0.55 EUR |
| 160+ | 0.45 EUR |
| 169+ | 0.42 EUR |
| FZT690BTA |
|
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 3A; 3W; SOT223
Mounting: SMD
Collector-emitter voltage: 45V
Case: SOT223
Collector current: 3A
Kind of package: reel; tape
Frequency: 150MHz
Power dissipation: 3W
Polarisation: bipolar
Type of transistor: NPN
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 3A; 3W; SOT223
Mounting: SMD
Collector-emitter voltage: 45V
Case: SOT223
Collector current: 3A
Kind of package: reel; tape
Frequency: 150MHz
Power dissipation: 3W
Polarisation: bipolar
Type of transistor: NPN
auf Bestellung 1276 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 123+ | 0.58 EUR |
| 130+ | 0.55 EUR |
| 179+ | 0.4 EUR |
| 189+ | 0.38 EUR |
| FZT692BTA | |
|
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 70V; 2A; 1.2W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 70V
Collector current: 2A
Power dissipation: 1.2W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 70V; 2A; 1.2W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 70V
Collector current: 2A
Power dissipation: 1.2W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
Produkt ist nicht verfügbar
| FZT696BTA |
|
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 180V; 500mA; 3W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 180V
Collector current: 0.5A
Power dissipation: 3W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Frequency: 130MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 180V; 500mA; 3W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 180V
Collector current: 0.5A
Power dissipation: 3W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Frequency: 130MHz
auf Bestellung 995 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 65+ | 1.11 EUR |
| 82+ | 0.88 EUR |
| 117+ | 0.62 EUR |
| 130+ | 0.55 EUR |
| 151+ | 0.48 EUR |
| 159+ | 0.45 EUR |
| ZTX651 |
|
Hersteller: DIODES INCORPORATED
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 2A; 1.5W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 2A
Power dissipation: 1.5W
Case: TO92
Current gain: 40...300
Mounting: THT
Kind of package: bulk
Frequency: 175MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 2A; 1.5W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 2A
Power dissipation: 1.5W
Case: TO92
Current gain: 40...300
Mounting: THT
Kind of package: bulk
Frequency: 175MHz
Produkt ist nicht verfügbar
| ZTX653 |
|
Hersteller: DIODES INCORPORATED
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 100V; 2A; 1W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 2A
Power dissipation: 1W
Case: TO92
Mounting: THT
Kind of package: bulk
Frequency: 175MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 100V; 2A; 1W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 2A
Power dissipation: 1W
Case: TO92
Mounting: THT
Kind of package: bulk
Frequency: 175MHz
auf Bestellung 3444 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 66+ | 1.09 EUR |
| 117+ | 0.61 EUR |
| 136+ | 0.53 EUR |
| 152+ | 0.47 EUR |
| 162+ | 0.44 EUR |
| ZTX653STZ |
|
Hersteller: DIODES INCORPORATED
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 100V; 2A; 1W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 2A
Power dissipation: 1W
Case: TO92
Mounting: THT
Kind of package: bulk
Frequency: 175MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 100V; 2A; 1W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 2A
Power dissipation: 1W
Case: TO92
Mounting: THT
Kind of package: bulk
Frequency: 175MHz
auf Bestellung 1743 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 117+ | 0.61 EUR |
| 132+ | 0.54 EUR |
| 152+ | 0.47 EUR |
| 161+ | 0.45 EUR |
| DMG6402LDM-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.2A; Idm: 31A; 1.12W; SOT26
On-state resistance: 40mΩ
Mounting: SMD
Case: SOT26
Drain-source voltage: 30V
Drain current: 4.2A
Type of transistor: N-MOSFET
Power dissipation: 1.12W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 9.2nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 31A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.2A; Idm: 31A; 1.12W; SOT26
On-state resistance: 40mΩ
Mounting: SMD
Case: SOT26
Drain-source voltage: 30V
Drain current: 4.2A
Type of transistor: N-MOSFET
Power dissipation: 1.12W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 9.2nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 31A
Produkt ist nicht verfügbar
| DMG6402LVT-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5A; 1.1W; TSOT26
On-state resistance: 42mΩ
Mounting: SMD
Case: TSOT26
Drain-source voltage: 30V
Drain current: 5A
Type of transistor: N-MOSFET
Power dissipation: 1.1W
Polarisation: unipolar
Kind of package: reel; tape
Kind of channel: enhanced
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5A; 1.1W; TSOT26
On-state resistance: 42mΩ
Mounting: SMD
Case: TSOT26
Drain-source voltage: 30V
Drain current: 5A
Type of transistor: N-MOSFET
Power dissipation: 1.1W
Polarisation: unipolar
Kind of package: reel; tape
Kind of channel: enhanced
Gate-source voltage: ±20V
auf Bestellung 2730 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 300+ | 0.24 EUR |
| 570+ | 0.13 EUR |
| 645+ | 0.11 EUR |
| 725+ | 0.099 EUR |
| 770+ | 0.093 EUR |
| ZTL432AFTA |
|
Hersteller: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±1%; SOT23; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Tolerance: ±1%
Mounting: SMD
Case: SOT23
Operating temperature: -40...125°C
Kind of package: reel; tape
Maximum output current: 0.1A
Operating voltage: 2.5...20V
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±1%; SOT23; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Tolerance: ±1%
Mounting: SMD
Case: SOT23
Operating temperature: -40...125°C
Kind of package: reel; tape
Maximum output current: 0.1A
Operating voltage: 2.5...20V
auf Bestellung 2409 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 320+ | 0.23 EUR |
| 435+ | 0.17 EUR |
| 485+ | 0.15 EUR |
| 520+ | 0.14 EUR |
| 550+ | 0.13 EUR |
| ZTL432AQFTA |
|
Hersteller: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±1%; SOT23; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Tolerance: ±1%
Mounting: SMD
Case: SOT23
Operating temperature: -40...125°C
Kind of package: reel; tape
Maximum output current: 0.1A
Application: automotive industry
Operating voltage: 2.5...20V
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±1%; SOT23; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Tolerance: ±1%
Mounting: SMD
Case: SOT23
Operating temperature: -40...125°C
Kind of package: reel; tape
Maximum output current: 0.1A
Application: automotive industry
Operating voltage: 2.5...20V
Produkt ist nicht verfügbar
| ZTL432BFFTA |
|
Hersteller: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±0.5%; SOT23F; reel,tape
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Tolerance: ±0.5%
Mounting: SMD
Case: SOT23F
Operating temperature: -40...125°C
Kind of package: reel; tape
Maximum output current: 0.1A
Operating voltage: 2.5...20V
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±0.5%; SOT23F; reel,tape
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Tolerance: ±0.5%
Mounting: SMD
Case: SOT23F
Operating temperature: -40...125°C
Kind of package: reel; tape
Maximum output current: 0.1A
Operating voltage: 2.5...20V
Produkt ist nicht verfügbar
| SMAJ54CA-13-F |
|
Hersteller: DIODES INCORPORATED
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 400W; 60÷66.3V; 4.6A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 54V
Breakdown voltage: 60...66.3V
Max. forward impulse current: 4.6A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 400W; 60÷66.3V; 4.6A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 54V
Breakdown voltage: 60...66.3V
Max. forward impulse current: 4.6A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
| SMAJ58CA-13-F |
|
Hersteller: DIODES INCORPORATED
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 400W; 64.4÷71.2V; 4.3A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...71.2V
Max. forward impulse current: 4.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 400W; 64.4÷71.2V; 4.3A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...71.2V
Max. forward impulse current: 4.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 1200 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 305+ | 0.24 EUR |
| 670+ | 0.11 EUR |
| 750+ | 0.096 EUR |
| 865+ | 0.083 EUR |
| 910+ | 0.079 EUR |
| BZX84C15-13-F |
|
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 15V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 15V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
auf Bestellung 8440 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 1120+ | 0.064 EUR |
| 2480+ | 0.029 EUR |
| 2780+ | 0.026 EUR |
| 3140+ | 0.023 EUR |
| 3320+ | 0.022 EUR |
| BZX84C15-7-F |
|
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 15V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 15V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
auf Bestellung 400 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 400+ | 0.17 EUR |
| BZX84C15Q-13-F |
|
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 15V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 15V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Application: automotive industry
Produkt ist nicht verfügbar
| BZX84C15Q-7-F |
|
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 15V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 15V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Application: automotive industry
Produkt ist nicht verfügbar
| BZX84C15S-7-F |
|
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 15V; SMD; reel,tape; SOT363; double independent
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT363
Semiconductor structure: double independent
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 15V; SMD; reel,tape; SOT363; double independent
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT363
Semiconductor structure: double independent
Produkt ist nicht verfügbar
| BZX84C15W-7-F |
|
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 15V; SMD; reel,tape; SOT323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT323
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 15V; SMD; reel,tape; SOT323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT323
Semiconductor structure: single diode
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 1160+ | 0.062 EUR |
| 1340+ | 0.054 EUR |
| 1720+ | 0.042 EUR |
| 1820+ | 0.039 EUR |
| AP2152MPG-13 |
|
Hersteller: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 0.5A; Ch: 2; P-Channel; SMD
Kind of integrated circuit: high-side; USB switch
Mounting: SMD
Case: MSOP8EP
Supply voltage: 2.7...5.5V DC
On-state resistance: 0.115Ω
Output current: 0.5A
Type of integrated circuit: power switch
Number of channels: 2
Kind of output: P-Channel
Active logical level: high
Kind of package: reel; tape
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 0.5A; Ch: 2; P-Channel; SMD
Kind of integrated circuit: high-side; USB switch
Mounting: SMD
Case: MSOP8EP
Supply voltage: 2.7...5.5V DC
On-state resistance: 0.115Ω
Output current: 0.5A
Type of integrated circuit: power switch
Number of channels: 2
Kind of output: P-Channel
Active logical level: high
Kind of package: reel; tape
Produkt ist nicht verfügbar
| DMT3020LFDB-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.2A; Idm: 50A; 1.8W
Case: U-DFN2020-6
Mounting: SMD
Power dissipation: 1.8W
Kind of package: reel; tape
Gate charge: 7nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 50A
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 6.2A
On-state resistance: 32mΩ
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.2A; Idm: 50A; 1.8W
Case: U-DFN2020-6
Mounting: SMD
Power dissipation: 1.8W
Kind of package: reel; tape
Gate charge: 7nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 50A
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 6.2A
On-state resistance: 32mΩ
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
| DMT3020LFDB-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.2A; Idm: 50A; 1.8W
Case: U-DFN2020-6
Mounting: SMD
Power dissipation: 1.8W
Kind of package: reel; tape
Gate charge: 7nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 50A
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 6.2A
On-state resistance: 32mΩ
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.2A; Idm: 50A; 1.8W
Case: U-DFN2020-6
Mounting: SMD
Power dissipation: 1.8W
Kind of package: reel; tape
Gate charge: 7nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 50A
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 6.2A
On-state resistance: 32mΩ
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
| DMT3020LFDBQ-13 |
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.2A; Idm: 50A; 1.8W
Case: U-DFN2020-6
Mounting: SMD
Application: automotive industry
Power dissipation: 1.8W
Kind of package: reel; tape
Gate charge: 7nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 50A
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 6.2A
On-state resistance: 32mΩ
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.2A; Idm: 50A; 1.8W
Case: U-DFN2020-6
Mounting: SMD
Application: automotive industry
Power dissipation: 1.8W
Kind of package: reel; tape
Gate charge: 7nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 50A
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 6.2A
On-state resistance: 32mΩ
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
| DMT3020LFDF-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.4A; Idm: 40A; 1.1W
Case: U-DFN2020-6
Mounting: SMD
Power dissipation: 1.1W
Kind of package: reel; tape
Gate charge: 7nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 40A
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5.4A
On-state resistance: 28mΩ
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.4A; Idm: 40A; 1.1W
Case: U-DFN2020-6
Mounting: SMD
Power dissipation: 1.1W
Kind of package: reel; tape
Gate charge: 7nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 40A
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5.4A
On-state resistance: 28mΩ
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
| DMT3020LFDF-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.4A; Idm: 40A; 1.1W
Case: U-DFN2020-6
Mounting: SMD
Power dissipation: 1.1W
Kind of package: reel; tape
Gate charge: 7nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 40A
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5.4A
On-state resistance: 28mΩ
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.4A; Idm: 40A; 1.1W
Case: U-DFN2020-6
Mounting: SMD
Power dissipation: 1.1W
Kind of package: reel; tape
Gate charge: 7nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 40A
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5.4A
On-state resistance: 28mΩ
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
| DMT3020LFDFQ-13 |
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.7A; Idm: 40A; 0.4W
Case: U-DFN2020-6
Mounting: SMD
Application: automotive industry
Power dissipation: 0.4W
Kind of package: reel; tape
Gate charge: 7nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 40A
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 6.7A
On-state resistance: 28mΩ
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.7A; Idm: 40A; 0.4W
Case: U-DFN2020-6
Mounting: SMD
Application: automotive industry
Power dissipation: 0.4W
Kind of package: reel; tape
Gate charge: 7nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 40A
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 6.7A
On-state resistance: 28mΩ
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
| DMT3020LFDFQ-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.4A; Idm: 40A; 1.1W
Case: U-DFN2020-6
Mounting: SMD
Application: automotive industry
Power dissipation: 1.1W
Kind of package: reel; tape
Gate charge: 7nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 40A
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5.4A
On-state resistance: 28mΩ
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.4A; Idm: 40A; 1.1W
Case: U-DFN2020-6
Mounting: SMD
Application: automotive industry
Power dissipation: 1.1W
Kind of package: reel; tape
Gate charge: 7nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 40A
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5.4A
On-state resistance: 28mΩ
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar