DMP3165SVT-7 DIODES INCORPORATED
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -2.2A; Idm: -15A; 0.88W
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -2.2A
Pulsed drain current: -15A
Power dissipation: 0.88W
Case: TSOT26
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: SMD
Gate charge: 6.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5 Stücke
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -2.2A; Idm: -15A; 0.88W
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -2.2A
Pulsed drain current: -15A
Power dissipation: 0.88W
Case: TSOT26
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: SMD
Gate charge: 6.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5 Stücke
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Technische Details DMP3165SVT-7 DIODES INCORPORATED
Description: MOSFET BVDSS: 25V-30V TSOT26, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta), Rds On (Max) @ Id, Vgs: 95mOhm @ 2.7A, 10V, Power Dissipation (Max): 800mW (Ta), Vgs(th) (Max) @ Id: 2.2V @ 250µA, Supplier Device Package: TSOT-26, Drive Voltage (Max Rds On, Min Rds On): 3.3V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 287 pF @ 15 V.
Weitere Produktangebote DMP3165SVT-7
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DMP3165SVT-7 | Hersteller : Diodes Incorporated |
Description: MOSFET BVDSS: 25V-30V TSOT26 Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta) Rds On (Max) @ Id, Vgs: 95mOhm @ 2.7A, 10V Power Dissipation (Max): 800mW (Ta) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: TSOT-26 Drive Voltage (Max Rds On, Min Rds On): 3.3V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 287 pF @ 15 V |
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DMP3165SVT-7 | Hersteller : Diodes Incorporated | MOSFET MOSFET BVDSS: 25V 30V TSOT26 T&R 3K |
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DMP3165SVT-7 | Hersteller : DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -30V; -2.2A; Idm: -15A; 0.88W Type of transistor: P-MOSFET x2 Polarisation: unipolar Drain-source voltage: -30V Drain current: -2.2A Pulsed drain current: -15A Power dissipation: 0.88W Case: TSOT26 Gate-source voltage: ±20V On-state resistance: 0.2Ω Mounting: SMD Gate charge: 6.8nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |