DMN6040SK3Q-13 Diodes Incorporated
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 41V-60V TO252 T&R
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 20A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252, (D-Pak)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 22.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1287 pF @ 25 V
Description: MOSFET BVDSS: 41V-60V TO252 T&R
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 20A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252, (D-Pak)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 22.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1287 pF @ 25 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
2500+ | 0.52 EUR |
5000+ | 0.49 EUR |
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Produktbewertung abgeben
Technische Details DMN6040SK3Q-13 Diodes Incorporated
Description: MOSFET BVDSS: 41V-60V TO252 T&R, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 20A (Tc), Rds On (Max) @ Id, Vgs: 40mOhm @ 20A, 10V, Power Dissipation (Max): 42W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: TO-252, (D-Pak), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 22.4 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1287 pF @ 25 V.
Weitere Produktangebote DMN6040SK3Q-13 nach Preis ab 0.42 EUR bis 1.34 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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Preis ohne MwSt | ||||||||||||||
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DMN6040SK3Q-13 | Hersteller : Diodes Incorporated | MOSFET MOSFET BVDSS: 41V-60V |
auf Bestellung 2490 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN6040SK3Q-13 | Hersteller : Diodes Zetex | High Enhancement Mode MOSFET Automotive AEC-Q101 |
auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN6040SK3Q-13 | Hersteller : Diodes Inc | High Enhancement Mode MOSFET |
Produkt ist nicht verfügbar |
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DMN6040SK3Q-13 | Hersteller : Diodes Zetex | High Enhancement Mode MOSFET Automotive AEC-Q101 |
Produkt ist nicht verfügbar |
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DMN6040SK3Q-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 13A; Idm: 30A; 17W; TO252 Kind of package: reel; tape Mounting: SMD Case: TO252 Drain-source voltage: 60V Drain current: 13A On-state resistance: 50mΩ Type of transistor: N-MOSFET Application: automotive industry Power dissipation: 17W Polarisation: unipolar Gate charge: 22.4nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 30A Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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DMN6040SK3Q-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 13A; Idm: 30A; 17W; TO252 Kind of package: reel; tape Mounting: SMD Case: TO252 Drain-source voltage: 60V Drain current: 13A On-state resistance: 50mΩ Type of transistor: N-MOSFET Application: automotive industry Power dissipation: 17W Polarisation: unipolar Gate charge: 22.4nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 30A |
Produkt ist nicht verfügbar |