DMN6068SEQ-13 Diodes Zetex
auf Bestellung 12000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 4000+ | 0.22 EUR |
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Technische Details DMN6068SEQ-13 Diodes Zetex
Description: MOSFET BVDSS: 41V~60V SOT223 T&R, Packaging: Tape & Reel (TR), Package / Case: TO-261-4, TO-261AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta), Rds On (Max) @ Id, Vgs: 68mOhm @ 12A, 10V, Power Dissipation (Max): 2W (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: SOT-223-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 10.3 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 502 pF @ 30 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote DMN6068SEQ-13 nach Preis ab 0.2 EUR bis 1.02 EUR
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DMN6068SEQ-13 | Hersteller : Diodes Zetex |
 Trans MOSFET N-CH 60V 4.1A Automotive AEC-Q101 4-Pin(3+Tab) SOT-223 T/R |
auf Bestellung 12000 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN6068SEQ-13 | Hersteller : Diodes Zetex |
Trans MOSFET N-CH 60V 4.1A Automotive AEC-Q101 4-Pin(3+Tab) SOT-223 T/R |
auf Bestellung 636000 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN6068SEQ-13 | Hersteller : Diodes Incorporated |
Description: MOSFET BVDSS: 41V~60V SOT223 T&R Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta) Rds On (Max) @ Id, Vgs: 68mOhm @ 12A, 10V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-223-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 10.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 502 pF @ 30 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 636000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN6068SEQ-13 | Hersteller : Diodes Incorporated |
Description: MOSFET BVDSS: 41V~60V SOT223 T&R Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta) Rds On (Max) @ Id, Vgs: 68mOhm @ 12A, 10V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-223-3 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 10.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 502 pF @ 30 V Qualification: AEC-Q101 |
auf Bestellung 638497 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN6068SEQ-13 | Hersteller : Diodes Incorporated |
MOSFETs MOSFET BVDSS 41V-60V |
auf Bestellung 22571 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN6068SEQ-13 | Hersteller : DIODES INC. |
Description: DIODES INC. - DMN6068SEQ-13 - Leistungs-MOSFET, n-Kanal, 60 V, 5.6 A, 0.068 ohm, SOT-223, Oberflächenmontage tariffCode: 85411000 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 60V rohsCompliant: Y-EX Dauer-Drainstrom Id: 5.6A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 2W Bauform - Transistor: SOT-223 Anzahl der Pins: 3Pin(s) Produktpalette: PW Series productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.068ohm SVHC: Lead (23-Jan-2024) |
auf Bestellung 2590 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN6068SEQ-13 | Hersteller : DIODES INC. |
Description: DIODES INC. - DMN6068SEQ-13 - Leistungs-MOSFET, n-Kanal, 60 V, 5.6 A, 0.068 ohm, SOT-223, Oberflächenmontage tariffCode: 85411000 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 60V rohsCompliant: Y-EX Dauer-Drainstrom Id: 5.6A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 2W Bauform - Transistor: SOT-223 Anzahl der Pins: 3Pin(s) Produktpalette: PW Series productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.068ohm SVHC: Lead (23-Jan-2024) |
auf Bestellung 2590 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN6068SEQ-13 | Hersteller : Diodes Zetex |
Trans MOSFET N-CH 60V 4.1A Automotive AEC-Q101 4-Pin(3+Tab) SOT-223 T/R |
Produkt ist nicht verfügbar |
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| DMN6068SEQ-13 | Hersteller : Diodes Inc |
Trans MOSFET N-CH 60V 4.1A Automotive T/R |
Produkt ist nicht verfügbar |
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| DMN6068SEQ-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 4.5A; Idm: 20.8A; 3.7W; SOT223 Kind of package: reel; tape Mounting: SMD Case: SOT223 Drain-source voltage: 60V Drain current: 4.5A On-state resistance: 0.1Ω Type of transistor: N-MOSFET Application: automotive industry Power dissipation: 3.7W Polarisation: unipolar Gate charge: 10.3nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 20.8A Anzahl je Verpackung: 4000 Stücke |
Produkt ist nicht verfügbar |
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| DMN6068SEQ-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 4.5A; Idm: 20.8A; 3.7W; SOT223 Kind of package: reel; tape Mounting: SMD Case: SOT223 Drain-source voltage: 60V Drain current: 4.5A On-state resistance: 0.1Ω Type of transistor: N-MOSFET Application: automotive industry Power dissipation: 3.7W Polarisation: unipolar Gate charge: 10.3nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 20.8A |
Produkt ist nicht verfügbar |