DMN3013LDG-7 DIODES INCORPORATED
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 7.6A; Idm: 80A; 1.25W
Case: PowerDI3333-8
Mounting: SMD
Kind of package: reel; tape
Pulsed drain current: 80A
Power dissipation: 1.25W
Gate charge: 5.7nC
Polarisation: unipolar
Drain current: 7.6A
Kind of channel: enhanced
Drain-source voltage: 30V
Type of transistor: N-MOSFET
On-state resistance: 17.7mΩ
Gate-source voltage: ±10V
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 7.6A; Idm: 80A; 1.25W
Case: PowerDI3333-8
Mounting: SMD
Kind of package: reel; tape
Pulsed drain current: 80A
Power dissipation: 1.25W
Gate charge: 5.7nC
Polarisation: unipolar
Drain current: 7.6A
Kind of channel: enhanced
Drain-source voltage: 30V
Type of transistor: N-MOSFET
On-state resistance: 17.7mΩ
Gate-source voltage: ±10V
Anzahl je Verpackung: 1 Stücke
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Technische Details DMN3013LDG-7 DIODES INCORPORATED
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 30V; 7.6A; Idm: 80A; 1.25W, Case: PowerDI3333-8, Mounting: SMD, Kind of package: reel; tape, Pulsed drain current: 80A, Power dissipation: 1.25W, Gate charge: 5.7nC, Polarisation: unipolar, Drain current: 7.6A, Kind of channel: enhanced, Drain-source voltage: 30V, Type of transistor: N-MOSFET, On-state resistance: 17.7mΩ, Gate-source voltage: ±10V, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote DMN3013LDG-7
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
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DMN3013LDG-7 | Hersteller : Diodes Incorporated |
 MOSFET MOSFET BVDSS: 25V-30V |
Produkt ist nicht verfügbar |
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| DMN3013LDG-7 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 7.6A; Idm: 80A; 1.25W Case: PowerDI3333-8 Mounting: SMD Kind of package: reel; tape Pulsed drain current: 80A Power dissipation: 1.25W Gate charge: 5.7nC Polarisation: unipolar Drain current: 7.6A Kind of channel: enhanced Drain-source voltage: 30V Type of transistor: N-MOSFET On-state resistance: 17.7mΩ Gate-source voltage: ±10V |
Produkt ist nicht verfügbar |