DMN3010LSS-13 Diodes Incorporated
auf Bestellung 2330 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3+ | 1.18 EUR |
| 10+ | 1.02 EUR |
| 100+ | 0.7 EUR |
| 500+ | 0.59 EUR |
| 1000+ | 0.5 EUR |
| 2500+ | 0.42 EUR |
| 5000+ | 0.4 EUR |
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Technische Details DMN3010LSS-13 Diodes Incorporated
Description: MOSFET N-CH 30V 16A 8SOP, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 16A (Ta), Rds On (Max) @ Id, Vgs: 9mOhm @ 16A, 10V, Power Dissipation (Max): 2.5W (Ta), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: 8-SOP, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 43.7 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2096 pF @ 15 V.
Weitere Produktangebote DMN3010LSS-13 nach Preis ab 0.51 EUR bis 1.2 EUR
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DMN3010LSS-13 | Hersteller : Diodes Incorporated |
 Description: MOSFET N-CH 30V 16A 8SOPPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Ta) Rds On (Max) @ Id, Vgs: 9mOhm @ 16A, 10V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 8-SOP Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 43.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2096 pF @ 15 V |
auf Bestellung 2490 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN3010LSS-13 | Hersteller : Diodes Inc |
Trans MOSFET N-CH 30V 16A 8-Pin SOP T/R |
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DMN3010LSS-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 13A; Idm: 64A; 2.5W; SO8 Case: SO8 Mounting: SMD Kind of package: reel; tape Pulsed drain current: 64A Power dissipation: 2.5W Gate charge: 43.7nC Polarisation: unipolar Drain current: 13A Kind of channel: enhanced Drain-source voltage: 30V Type of transistor: N-MOSFET On-state resistance: 13mΩ Gate-source voltage: ±20V Anzahl je Verpackung: 2500 Stücke |
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DMN3010LSS-13 | Hersteller : Diodes Incorporated |
Description: MOSFET N-CH 30V 16A 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Ta) Rds On (Max) @ Id, Vgs: 9mOhm @ 16A, 10V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 8-SOP Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 43.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2096 pF @ 15 V |
Produkt ist nicht verfügbar |
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DMN3010LSS-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 13A; Idm: 64A; 2.5W; SO8 Case: SO8 Mounting: SMD Kind of package: reel; tape Pulsed drain current: 64A Power dissipation: 2.5W Gate charge: 43.7nC Polarisation: unipolar Drain current: 13A Kind of channel: enhanced Drain-source voltage: 30V Type of transistor: N-MOSFET On-state resistance: 13mΩ Gate-source voltage: ±20V |
Produkt ist nicht verfügbar |