DMN3010LFG-7 Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET N-CH 30V 11A PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 30A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 18A, 10V
Power Dissipation (Max): 900mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI3333-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2075 pF @ 15 V
auf Bestellung 18000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2000+ | 0.33 EUR |
| 6000+ | 0.31 EUR |
| 10000+ | 0.29 EUR |
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Technische Details DMN3010LFG-7 Diodes Incorporated
Description: MOSFET N-CH 30V 11A PWRDI3333, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 30A (Tc), Rds On (Max) @ Id, Vgs: 8.5mOhm @ 18A, 10V, Power Dissipation (Max): 900mW (Ta), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: PowerDI3333-8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2075 pF @ 15 V.
Weitere Produktangebote DMN3010LFG-7 nach Preis ab 0.32 EUR bis 0.97 EUR
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DMN3010LFG-7 | Hersteller : Diodes Incorporated |
Description: MOSFET N-CH 30V 11A PWRDI3333 Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 30A (Tc) Rds On (Max) @ Id, Vgs: 8.5mOhm @ 18A, 10V Power Dissipation (Max): 900mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerDI3333-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2075 pF @ 15 V |
auf Bestellung 23246 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN3010LFG-7 | Hersteller : Diodes Incorporated |
MOSFET N-Ch Enh Mode FET 30Vdss 20Vgss |
auf Bestellung 1780 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN3010LFG-7 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 11A; Idm: 90A; 2.4W Drain-source voltage: 30V Drain current: 11A On-state resistance: 10.5mΩ Type of transistor: N-MOSFET Power dissipation: 2.4W Polarisation: unipolar Kind of package: reel; tape Case: PowerDI3333-8 Gate charge: 37nC Mounting: SMD Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 90A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| DMN3010LFG-7 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 11A; Idm: 90A; 2.4W Drain-source voltage: 30V Drain current: 11A On-state resistance: 10.5mΩ Type of transistor: N-MOSFET Power dissipation: 2.4W Polarisation: unipolar Kind of package: reel; tape Case: PowerDI3333-8 Gate charge: 37nC Mounting: SMD Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 90A |
Produkt ist nicht verfügbar |