DMN3010LFG-13 DIODES INCORPORATED
Hersteller: DIODES INCORPORATEDCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 11A; Idm: 90A; 2.4W
Drain-source voltage: 30V
Drain current: 11A
On-state resistance: 10.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.4W
Polarisation: unipolar
Kind of package: reel; tape
Case: PowerDI3333-8
Gate charge: 37nC
Mounting: SMD
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 90A
Anzahl je Verpackung: 3000 Stücke
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Technische Details DMN3010LFG-13 DIODES INCORPORATED
Description: MOSFET N-CH 30V 11A PWRDI3333, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 30A (Tc), Rds On (Max) @ Id, Vgs: 8.5mOhm @ 18A, 10V, Power Dissipation (Max): 900mW (Ta), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: PowerDI3333-8, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2075 pF @ 15 V.
Weitere Produktangebote DMN3010LFG-13
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DMN3010LFG-13 | Hersteller : Diodes Incorporated |
Description: MOSFET N-CH 30V 11A PWRDI3333 Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 30A (Tc) Rds On (Max) @ Id, Vgs: 8.5mOhm @ 18A, 10V Power Dissipation (Max): 900mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerDI3333-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2075 pF @ 15 V |
Produkt ist nicht verfügbar |
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DMN3010LFG-13 | Hersteller : Diodes Incorporated |
MOSFET N-Ch Enh Mode FET 30Vdss 20Vgss |
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| DMN3010LFG-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 11A; Idm: 90A; 2.4W Drain-source voltage: 30V Drain current: 11A On-state resistance: 10.5mΩ Type of transistor: N-MOSFET Power dissipation: 2.4W Polarisation: unipolar Kind of package: reel; tape Case: PowerDI3333-8 Gate charge: 37nC Mounting: SMD Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 90A |
Produkt ist nicht verfügbar |