auf Bestellung 53 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2+ | 1.53 EUR |
| 10+ | 1.36 EUR |
| 100+ | 1.04 EUR |
| 500+ | 0.82 EUR |
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Technische Details DMN3013LFG-7 Diodes Incorporated
Category: Multi channel transistors, Description: Transistor: N-MOSFET x2; unipolar; 30V; 7.6A; Idm: 80A; 1.25W, Case: PowerDI3333-8, Mounting: SMD, Kind of package: reel; tape, Pulsed drain current: 80A, Power dissipation: 1.25W, Gate charge: 5.7nC, Polarisation: unipolar, Drain current: 7.6A, Kind of channel: enhanced, Drain-source voltage: 30V, Type of transistor: N-MOSFET x2, On-state resistance: 17.7mΩ, Gate-source voltage: ±10V, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote DMN3013LFG-7
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| DMN3013LFG-7 | Hersteller : DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30V; 7.6A; Idm: 80A; 1.25W Case: PowerDI3333-8 Mounting: SMD Kind of package: reel; tape Pulsed drain current: 80A Power dissipation: 1.25W Gate charge: 5.7nC Polarisation: unipolar Drain current: 7.6A Kind of channel: enhanced Drain-source voltage: 30V Type of transistor: N-MOSFET x2 On-state resistance: 17.7mΩ Gate-source voltage: ±10V Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| DMN3013LFG-7 | Hersteller : DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30V; 7.6A; Idm: 80A; 1.25W Case: PowerDI3333-8 Mounting: SMD Kind of package: reel; tape Pulsed drain current: 80A Power dissipation: 1.25W Gate charge: 5.7nC Polarisation: unipolar Drain current: 7.6A Kind of channel: enhanced Drain-source voltage: 30V Type of transistor: N-MOSFET x2 On-state resistance: 17.7mΩ Gate-source voltage: ±10V |
Produkt ist nicht verfügbar |