DMN6066SSD-13 Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET 2N-CH 60V 3.3A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.8W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3.3A
Input Capacitance (Ciss) (Max) @ Vds: 502pF @ 30V
Rds On (Max) @ Id, Vgs: 66mOhm @ 4.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10.3nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
auf Bestellung 22500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2500+ | 0.62 EUR |
| 5000+ | 0.59 EUR |
| 12500+ | 0.57 EUR |
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Technische Details DMN6066SSD-13 Diodes Incorporated
Description: MOSFET 2N-CH 60V 3.3A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.8W, Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 3.3A, Input Capacitance (Ciss) (Max) @ Vds: 502pF @ 30V, Rds On (Max) @ Id, Vgs: 66mOhm @ 4.5A, 10V, Gate Charge (Qg) (Max) @ Vgs: 10.3nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-SO, Part Status: Active.
Weitere Produktangebote DMN6066SSD-13 nach Preis ab 0.55 EUR bis 1.46 EUR
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DMN6066SSD-13 | Hersteller : Diodes Incorporated |
MOSFET MOSFET,N-CHANNEL 60V, 3.6A/- 4.4A |
auf Bestellung 24143 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN6066SSD-13 | Hersteller : Diodes Incorporated |
Description: MOSFET 2N-CH 60V 3.3A 8SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.8W Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 3.3A Input Capacitance (Ciss) (Max) @ Vds: 502pF @ 30V Rds On (Max) @ Id, Vgs: 66mOhm @ 4.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 10.3nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SO Part Status: Active |
auf Bestellung 24979 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN6066SSD-13 | Hersteller : Diodes Inc |
Trans MOSFET N-CH 60V 3.3A 8-Pin SO T/R |
Produkt ist nicht verfügbar |
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DMN6066SSD-13 | Hersteller : DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 60V; 3.5A; Idm: 17A; 2.14W; SO8 Kind of package: reel; tape Mounting: SMD Case: SO8 Drain-source voltage: 60V Drain current: 3.5A On-state resistance: 97mΩ Type of transistor: N-MOSFET x2 Power dissipation: 2.14W Polarisation: unipolar Gate charge: 10.3nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 17A Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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DMN6066SSD-13 | Hersteller : DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 60V; 3.5A; Idm: 17A; 2.14W; SO8 Kind of package: reel; tape Mounting: SMD Case: SO8 Drain-source voltage: 60V Drain current: 3.5A On-state resistance: 97mΩ Type of transistor: N-MOSFET x2 Power dissipation: 2.14W Polarisation: unipolar Gate charge: 10.3nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 17A |
Produkt ist nicht verfügbar |