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SI3433CDV-T1-GE3 SI3433CDV-T1-GE3 VISHAY si3433cdv.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -6A; Idm: -20A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -6A
Pulsed drain current: -20A
Power dissipation: 2.1W
Case: TSOP6
Gate-source voltage: ±8V
On-state resistance: 38mΩ
Mounting: SMD
Gate charge: 45nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SI3437DV-T1-E3 VISHAY si3437dv.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -150V; -1.4A; Idm: -5A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -1.4A
Pulsed drain current: -5A
Power dissipation: 3.2W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 0.79Ω
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI3437DV-T1-GE3 VISHAY si3437dv.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -150V; -1.4A; Idm: -5A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -1.4A
Pulsed drain current: -5A
Power dissipation: 3.2W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 0.79Ω
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SI3438DV-T1-E3 VISHAY si3438dv.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 7.4A; Idm: 20A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 7.4A
Pulsed drain current: 20A
Power dissipation: 3.5W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 42.5mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI3438DV-T1-GE3 VISHAY si3438dv.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 7.4A; Idm: 20A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 7.4A
Pulsed drain current: 20A
Power dissipation: 3.5W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 42.5mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI3440ADV-T1-GE3 VISHAY si3440adv.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 150V; 2.2A; Idm: 4A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 2.2A
Pulsed drain current: 4A
Power dissipation: 3.6W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 432mΩ
Mounting: SMD
Gate charge: 4nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI3440DV-T1-E3 VISHAY si3440dv.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 150V; 1.2A; Idm: 6A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 1.2A
Pulsed drain current: 6A
Power dissipation: 1.14W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 0.4Ω
Mounting: SMD
Gate charge: 8nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI3440DV-T1-GE3 SI3440DV-T1-GE3 VISHAY si3440dv.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 150V; 1.2A; Idm: 6A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 1.2A
Pulsed drain current: 6A
Power dissipation: 0.59W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 0.375Ω
Mounting: SMD
Gate charge: 8nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SI3442BDV-T1-E3 VISHAY si3442bd.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 4.2A; Idm: 20A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 4.2A
Pulsed drain current: 20A
Power dissipation: 1.67W
Case: TSOP6
Gate-source voltage: ±12V
On-state resistance: 90mΩ
Mounting: SMD
Gate charge: 5nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI3442BDV-T1-GE3 VISHAY si3442bd.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 4.2A; Idm: 20A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 4.2A
Pulsed drain current: 20A
Power dissipation: 1.67W
Case: TSOP6
Gate-source voltage: ±12V
On-state resistance: 90mΩ
Mounting: SMD
Gate charge: 5nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI3443BDV-T1-E3 SI3443BDV-T1-E3 VISHAY SI3443BDV.pdf description Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.8A; 1.3W; TSOP6
Type of transistor: P-MOSFET
Mounting: SMD
Case: TSOP6
On-state resistance: 60mΩ
Kind of package: reel; tape
Power dissipation: 1.3W
Polarisation: unipolar
Gate charge: 6nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Drain-source voltage: -20V
Drain current: -3.8A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2645 Stücke:
Lieferzeit 7-14 Tag (e)
186+0.39 EUR
214+ 0.33 EUR
281+ 0.26 EUR
297+ 0.24 EUR
Mindestbestellmenge: 186
SI3443BDV-T1-GE3 VISHAY 72749.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -3.6A; Idm: -20A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.6A
Pulsed drain current: -20A
Power dissipation: 1.1W
Case: TSOP6
Gate-source voltage: ±12V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 9nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI3443CDV-T1-E3 VISHAY si3443cd.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -5.97A; Idm: -20A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -5.97A
Pulsed drain current: -20A
Power dissipation: 3.2W
Case: TSOP6
Gate-source voltage: ±12V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 12.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI3443CDV-T1-GE3 VISHAY SI3443CDV.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.6A; 2.05W; TSOP6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4.6A
Power dissipation: 2.05W
Case: TSOP6
Gate-source voltage: ±12V
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 7.53nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SI3443DDV-T1-BE3 VISHAY si3443ddv.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -4A; Idm: -20A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4A
Pulsed drain current: -20A
Power dissipation: 2.7W
Case: TSOP6
Gate-source voltage: ±12V
On-state resistance: 90mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI3443DDV-T1-GE3 VISHAY SI3443DDV.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4A; 1.7W; TSOP6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4A
Power dissipation: 1.7W
Case: TSOP6
Gate-source voltage: ±12V
On-state resistance: 47mΩ
Mounting: SMD
Gate charge: 9nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SI3453DV-T1-GE3 VISHAY si3453dv.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -3.4A; Idm: -6A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.4A
Pulsed drain current: -6A
Power dissipation: 3W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 276mΩ
Mounting: SMD
Gate charge: 6.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI3456DDV-T1-E3 VISHAY si3456ddv.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 6.3A; Idm: 20A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 6.3A
Pulsed drain current: 20A
Power dissipation: 2.7W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 50mΩ
Mounting: SMD
Gate charge: 9nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI3456DDV-T1-GE3 VISHAY si3456ddv.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 6.3A; Idm: 20A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 6.3A
Pulsed drain current: 20A
Power dissipation: 2.7W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 50mΩ
Mounting: SMD
Gate charge: 6nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
SI3457CDV-T1-E3 VISHAY si3457cdv.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -5.1A; Idm: -20A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -5.1A
Pulsed drain current: -20A
Power dissipation: 3W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 113mΩ
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI3457CDV-T1-GE3 SI3457CDV-T1-GE3 VISHAY SI3457CDV.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -4.1A; 2W; TSOP6
Type of transistor: P-MOSFET
Mounting: SMD
Case: TSOP6
On-state resistance: 74mΩ
Kind of package: reel; tape
Power dissipation: 2W
Polarisation: unipolar
Gate charge: 5.1nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: -30V
Drain current: -4.1A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1916 Stücke:
Lieferzeit 7-14 Tag (e)
112+0.64 EUR
159+ 0.45 EUR
320+ 0.22 EUR
338+ 0.21 EUR
6000+ 0.2 EUR
Mindestbestellmenge: 112
SI3458BDV-T1-BE3 VISHAY si3458bdv.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 4.1A; Idm: 10A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 4.1A
Pulsed drain current: 10A
Power dissipation: 3.3W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 128mΩ
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI3458BDV-T1-E3 VISHAY si3458bdv.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 4.1A; Idm: 10A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 4.1A
Pulsed drain current: 10A
Power dissipation: 3.3W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 128mΩ
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI3458BDV-T1-GE3 SI3458BDV-T1-GE3 VISHAY Si3458BDV.PDF Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 3.2A; Idm: 10A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 3.2A
Pulsed drain current: 10A
Power dissipation: 2.1W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1809 Stücke:
Lieferzeit 7-14 Tag (e)
74+0.97 EUR
122+ 0.59 EUR
136+ 0.53 EUR
170+ 0.42 EUR
180+ 0.4 EUR
Mindestbestellmenge: 74
SI3459BDV-T1-E3 VISHAY si3459bd.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -60V; -2.9A; Idm: -8A
Kind of package: reel; tape
Drain-source voltage: -60V
Drain current: -2.9A
On-state resistance: 288mΩ
Type of transistor: P-MOSFET
Power dissipation: 3.3W
Polarisation: unipolar
Gate charge: 12nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -8A
Mounting: SMD
Case: TSOP6
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI3459BDV-T1-GE3 SI3459BDV-T1-GE3 VISHAY si3459bd.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -60V; -2.9A; Idm: -8A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -2.9A
Pulsed drain current: -8A
Power dissipation: 3.3W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 288mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2344 Stücke:
Lieferzeit 7-14 Tag (e)
75+0.96 EUR
94+ 0.76 EUR
129+ 0.56 EUR
228+ 0.31 EUR
241+ 0.3 EUR
30000+ 0.29 EUR
Mindestbestellmenge: 75
SI3460DDV-T1-GE3 SI3460DDV-T1-GE3 VISHAY si3460ddv.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 7.9A; Idm: 20A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 7.9A
Pulsed drain current: 20A
Power dissipation: 1.7W
Case: TSOP6
Gate-source voltage: ±8V
On-state resistance: 28mΩ
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2490 Stücke:
Lieferzeit 7-14 Tag (e)
157+0.46 EUR
216+ 0.33 EUR
250+ 0.29 EUR
443+ 0.16 EUR
468+ 0.15 EUR
Mindestbestellmenge: 157
SI3464DV-T1-GE3 VISHAY si3464dv.pdf SI3464DV-T1-GE3 SMD N channel transistors
Produkt ist nicht verfügbar
SI3469DV-T1-E3 VISHAY si3469dv.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -6.7A; Idm: -25A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -6.7A
Pulsed drain current: -25A
Power dissipation: 2W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 51mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI3469DV-T1-GE3 VISHAY si3469dv.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -6.7A; Idm: -25A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -6.7A
Pulsed drain current: -25A
Power dissipation: 2W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 51mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI3473CDV-T1-E3 VISHAY si3473cd.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -12V; -8A; Idm: -20A
Power dissipation: 4.2W
Mounting: SMD
Kind of package: reel; tape
Case: TSOP6
Drain-source voltage: -12V
Drain current: -8A
On-state resistance: 36mΩ
Type of transistor: P-MOSFET
Polarisation: unipolar
Gate charge: 65nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -20A
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI3473CDV-T1-GE3 SI3473CDV-T1-GE3 VISHAY si3473cd.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -12V; -8A; Idm: -20A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -8A
Pulsed drain current: -20A
Power dissipation: 4.2W
Case: TSOP6
Gate-source voltage: ±8V
On-state resistance: 36mΩ
Mounting: SMD
Gate charge: 65nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2989 Stücke:
Lieferzeit 7-14 Tag (e)
88+0.82 EUR
211+ 0.34 EUR
223+ 0.32 EUR
3000+ 0.31 EUR
Mindestbestellmenge: 88
SI3473DDV-T1-GE3 VISHAY si3473ddv.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -12V; -8A; Idm: -30A
Mounting: SMD
Case: TSOP6
Technology: TrenchFET®
Kind of channel: enhanced
Kind of package: reel; tape
On-state resistance: 38.8mΩ
Type of transistor: P-MOSFET
Power dissipation: 3.6W
Polarisation: unipolar
Gate charge: 57nC
Gate-source voltage: ±8V
Pulsed drain current: -30A
Drain-source voltage: -12V
Drain current: -8A
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI3474DV-T1-GE3 SI3474DV-T1-GE3 VISHAY si3474dv.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 3.8A; Idm: 14A
Power dissipation: 2.33W
Mounting: SMD
Kind of package: reel; tape
Case: TSOP6
Drain-source voltage: 100V
Drain current: 3.8A
On-state resistance: 126mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 10.4nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 14A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SI3476DV-T1-GE3 VISHAY si3476dv.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 4.6A; Idm: 18A
Power dissipation: 3.6W
Mounting: SMD
Kind of package: reel; tape
Case: TSOP6
Drain-source voltage: 80V
Drain current: 4.6A
On-state resistance: 126mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 7.5nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 18A
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI3477DV-T1-GE3 VISHAY si3477dv.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -12V; -8A; Idm: -40A
Power dissipation: 4.2W
Mounting: SMD
Kind of package: reel; tape
Case: TSOP6
Drain-source voltage: -12V
Drain current: -8A
On-state resistance: 33mΩ
Type of transistor: P-MOSFET
Polarisation: unipolar
Gate charge: 90nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±10V
Pulsed drain current: -40A
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI3483CDV-T1-E3 VISHAY si3483cd.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -8A; Idm: -25A
Drain-source voltage: -30V
Drain current: -8A
On-state resistance: 53mΩ
Type of transistor: P-MOSFET
Power dissipation: 4.2W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 33nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -25A
Mounting: SMD
Case: TSOP6
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI3483CDV-T1-GE3 SI3483CDV-T1-GE3 VISHAY SI3483CDV.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -7A; 2.7W; TSOP6
Type of transistor: P-MOSFET
Mounting: SMD
Case: TSOP6
On-state resistance: 34mΩ
Kind of package: reel; tape
Power dissipation: 2.7W
Polarisation: unipolar
Gate charge: 11.5nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: -30V
Drain current: -7A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2329 Stücke:
Lieferzeit 7-14 Tag (e)
148+0.49 EUR
166+ 0.43 EUR
198+ 0.36 EUR
210+ 0.34 EUR
3000+ 0.33 EUR
Mindestbestellmenge: 148
SI3483DDV-T1-BE3 VISHAY si3483ddv.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -8A; Idm: -30A; 3W
Drain-source voltage: -30V
Drain current: -8A
On-state resistance: 51.3mΩ
Type of transistor: P-MOSFET
Power dissipation: 3W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 14.5nC
Technology: TrenchFET®
Kind of channel: enhanced
Pulsed drain current: -30A
Mounting: SMD
Case: TSOP6
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI3483DDV-T1-GE3 VISHAY si3483ddv.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -8A; Idm: -30A; 3W
Case: TSOP6
Mounting: SMD
Kind of package: reel; tape
Type of transistor: P-MOSFET
On-state resistance: 51.3mΩ
Power dissipation: 3W
Polarisation: unipolar
Drain current: -8A
Drain-source voltage: -30V
Gate charge: 14.5nC
Technology: TrenchFET®
Kind of channel: enhanced
Pulsed drain current: -30A
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI3493BDV-T1-E3 VISHAY si3493bdv.pdf SI3493BDV-T1-E3 SMD P channel transistors
Produkt ist nicht verfügbar
SI3493BDV-T1-GE3 VISHAY si3493bdv.pdf SI3493BDV-T1-GE3 SMD P channel transistors
Produkt ist nicht verfügbar
Si3493DDV-T1-GE3 VISHAY si3493ddv.pdf SI3493DDV-T1-GE3 SMD P channel transistors
Produkt ist nicht verfügbar
SI3499DV-T1-BE3 VISHAY si3499dv.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -8V; -7A; Idm: -20A; 2W
Mounting: SMD
Case: TSOP6
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 42nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±5V
Pulsed drain current: -20A
Power dissipation: 2W
Drain-source voltage: -8V
Drain current: -7A
On-state resistance: 48mΩ
Type of transistor: P-MOSFET
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SI3499DV-T1-GE3 VISHAY si3499dv.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -8V; -7A; Idm: -20A; 2W
Mounting: SMD
Case: TSOP6
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 42nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±5V
Pulsed drain current: -20A
Power dissipation: 2W
Drain-source voltage: -8V
Drain current: -7A
On-state resistance: 48mΩ
Type of transistor: P-MOSFET
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI3552DV-T1-E3 SI3552DV-T1-E3 VISHAY si3552dv.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; TrenchFET®; unipolar; 30/-30V; 2.5/-1.8A
Type of transistor: N/P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 2.5/-1.8A
Pulsed drain current: -7...8A
Power dissipation: 1.15W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 360/175mΩ
Mounting: SMD
Gate charge: 3.6/3.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2998 Stücke:
Lieferzeit 7-14 Tag (e)
88+0.82 EUR
102+ 0.71 EUR
120+ 0.6 EUR
151+ 0.48 EUR
159+ 0.45 EUR
250+ 0.44 EUR
Mindestbestellmenge: 88
Si3552DV-T1-GE3 VISHAY si3552dv.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; TrenchFET®; unipolar; 30/-30V; 2.5/-1.8A
Kind of package: reel; tape
Drain-source voltage: 30/-30V
Drain current: 2.5/-1.8A
On-state resistance: 360/175mΩ
Type of transistor: N/P-MOSFET
Power dissipation: 1.15W
Polarisation: unipolar
Gate charge: 3.6/3.2nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -7...8A
Mounting: SMD
Case: TSOP6
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI3585CDV-T1-GE3 SI3585CDV-T1-GE3 VISHAY si3585cd.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 20/-20V; 3.1/-1.7A; 0.9/8W
Type of transistor: N/P-MOSFET
Mounting: SMD
Case: TSOP6
On-state resistance: 78/316mΩ
Kind of package: reel; tape
Power dissipation: 0.9/8W
Polarisation: unipolar
Gate charge: 4.8/9nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Drain-source voltage: 20/-20V
Drain current: 3.1/-1.7A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2485 Stücke:
Lieferzeit 7-14 Tag (e)
112+0.64 EUR
157+ 0.46 EUR
281+ 0.25 EUR
296+ 0.24 EUR
2000+ 0.23 EUR
Mindestbestellmenge: 112
SI3590DV-T1-E3 VISHAY si3590dv.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; TrenchFET®; unipolar; 30/-30V; 3/-2A
Type of transistor: N/P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 3/-2A
Pulsed drain current: 8A
Power dissipation: 1.05W
Case: TSOP6
Gate-source voltage: ±12V
On-state resistance: 300/120mΩ
Mounting: SMD
Gate charge: 6/4.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
Si3590DV-T1-GE3 Si3590DV-T1-GE3 VISHAY si3590dv.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; TrenchFET®; unipolar; 30/-30V; 2/-1.3A
Type of transistor: N/P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 2/-1.3A
Pulsed drain current: 8A
Power dissipation: 0.53W
Case: TSOP6
Gate-source voltage: ±12V
On-state resistance: 77/170mΩ
Mounting: SMD
Gate charge: 4.5/6nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI3865DDV-T1-GE3 SI3865DDV-T1-GE3 VISHAY Si3865DDV.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2.8A; Ch: 1; P-Channel; SMD; TSOP6
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 2.8A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: TSOP6
On-state resistance: 45mΩ
Kind of package: reel; tape
Supply voltage: 1.5...12V DC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2482 Stücke:
Lieferzeit 7-14 Tag (e)
142+0.5 EUR
158+ 0.45 EUR
191+ 0.38 EUR
202+ 0.35 EUR
3000+ 0.34 EUR
Mindestbestellmenge: 142
SI3900DV-T1-E3 VISHAY si3900dv.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 2.4A; Idm: 8A
Kind of package: reel; tape
Drain-source voltage: 20V
Drain current: 2.4A
On-state resistance: 0.2Ω
Type of transistor: N-MOSFET
Power dissipation: 1.15W
Polarisation: unipolar
Gate charge: 4nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 8A
Mounting: SMD
Case: TSOP6
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
Si3900DV-T1-GE3 VISHAY si3900dv.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 2.4A; Idm: 8A
Kind of package: reel; tape
Drain-source voltage: 20V
Drain current: 2.4A
On-state resistance: 0.2Ω
Type of transistor: N-MOSFET
Power dissipation: 1.15W
Polarisation: unipolar
Gate charge: 4nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 8A
Mounting: SMD
Case: TSOP6
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
Si3932DV-T1-GE3 VISHAY si3932dv.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 3.7A; Idm: 15A
Type of transistor: N-MOSFET x2
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 3.7A
Pulsed drain current: 15A
Power dissipation: 1.4W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 73mΩ
Mounting: SMD
Gate charge: 6nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI3993CDV-T1-GE3 VISHAY Si3993CDV.PDF SI3993CDV-T1-GE3 SMD P channel transistors
Produkt ist nicht verfügbar
SI4038DY-T1-GE3 VISHAY SI4038DY.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 42.5A; Idm: 150A
Mounting: SMD
Power dissipation: 7.8W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 87nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 150A
Case: SO8
Drain-source voltage: 40V
Drain current: 42.5A
On-state resistance: 3.2mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
SI4056ADY-T1-GE3 VISHAY si4056ady.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 8.3A; Idm: 40A; 5W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 8.3A
Pulsed drain current: 40A
Power dissipation: 5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 33mΩ
Mounting: SMD
Gate charge: 29nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
SI4056DY-T1-GE3 SI4056DY-T1-GE3 VISHAY si4056dy.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 11.1A; Idm: 70A; 3.6W; SO8
Kind of package: reel; tape
Drain-source voltage: 100V
Drain current: 11.1A
On-state resistance: 23mΩ
Type of transistor: N-MOSFET
Power dissipation: 3.6W
Polarisation: unipolar
Gate charge: 29.5nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 70A
Mounting: SMD
Case: SO8
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Si4058DY-T1-GE3 VISHAY si4058dy.pdf SI4058DY-T1-GE3 SMD N channel transistors
Produkt ist nicht verfügbar
SI4062DY-T1-GE3 SI4062DY-T1-GE3 VISHAY si4062dy.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 25.7A; 5W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 25.7A
Power dissipation: 5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: SMD
Gate charge: 18.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SI3433CDV-T1-GE3 si3433cdv.pdf
SI3433CDV-T1-GE3
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -6A; Idm: -20A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -6A
Pulsed drain current: -20A
Power dissipation: 2.1W
Case: TSOP6
Gate-source voltage: ±8V
On-state resistance: 38mΩ
Mounting: SMD
Gate charge: 45nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SI3437DV-T1-E3 si3437dv.pdf
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -150V; -1.4A; Idm: -5A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -1.4A
Pulsed drain current: -5A
Power dissipation: 3.2W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 0.79Ω
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI3437DV-T1-GE3 si3437dv.pdf
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -150V; -1.4A; Idm: -5A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -1.4A
Pulsed drain current: -5A
Power dissipation: 3.2W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 0.79Ω
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SI3438DV-T1-E3 si3438dv.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 7.4A; Idm: 20A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 7.4A
Pulsed drain current: 20A
Power dissipation: 3.5W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 42.5mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI3438DV-T1-GE3 si3438dv.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 7.4A; Idm: 20A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 7.4A
Pulsed drain current: 20A
Power dissipation: 3.5W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 42.5mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI3440ADV-T1-GE3 si3440adv.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 150V; 2.2A; Idm: 4A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 2.2A
Pulsed drain current: 4A
Power dissipation: 3.6W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 432mΩ
Mounting: SMD
Gate charge: 4nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI3440DV-T1-E3 si3440dv.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 150V; 1.2A; Idm: 6A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 1.2A
Pulsed drain current: 6A
Power dissipation: 1.14W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 0.4Ω
Mounting: SMD
Gate charge: 8nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI3440DV-T1-GE3 si3440dv.pdf
SI3440DV-T1-GE3
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 150V; 1.2A; Idm: 6A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 1.2A
Pulsed drain current: 6A
Power dissipation: 0.59W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 0.375Ω
Mounting: SMD
Gate charge: 8nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SI3442BDV-T1-E3 si3442bd.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 4.2A; Idm: 20A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 4.2A
Pulsed drain current: 20A
Power dissipation: 1.67W
Case: TSOP6
Gate-source voltage: ±12V
On-state resistance: 90mΩ
Mounting: SMD
Gate charge: 5nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI3442BDV-T1-GE3 si3442bd.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 4.2A; Idm: 20A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 4.2A
Pulsed drain current: 20A
Power dissipation: 1.67W
Case: TSOP6
Gate-source voltage: ±12V
On-state resistance: 90mΩ
Mounting: SMD
Gate charge: 5nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI3443BDV-T1-E3 description SI3443BDV.pdf
SI3443BDV-T1-E3
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.8A; 1.3W; TSOP6
Type of transistor: P-MOSFET
Mounting: SMD
Case: TSOP6
On-state resistance: 60mΩ
Kind of package: reel; tape
Power dissipation: 1.3W
Polarisation: unipolar
Gate charge: 6nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Drain-source voltage: -20V
Drain current: -3.8A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2645 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
186+0.39 EUR
214+ 0.33 EUR
281+ 0.26 EUR
297+ 0.24 EUR
Mindestbestellmenge: 186
SI3443BDV-T1-GE3 72749.pdf
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -3.6A; Idm: -20A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.6A
Pulsed drain current: -20A
Power dissipation: 1.1W
Case: TSOP6
Gate-source voltage: ±12V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 9nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI3443CDV-T1-E3 si3443cd.pdf
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -5.97A; Idm: -20A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -5.97A
Pulsed drain current: -20A
Power dissipation: 3.2W
Case: TSOP6
Gate-source voltage: ±12V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 12.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI3443CDV-T1-GE3 SI3443CDV.pdf
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.6A; 2.05W; TSOP6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4.6A
Power dissipation: 2.05W
Case: TSOP6
Gate-source voltage: ±12V
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 7.53nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SI3443DDV-T1-BE3 si3443ddv.pdf
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -4A; Idm: -20A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4A
Pulsed drain current: -20A
Power dissipation: 2.7W
Case: TSOP6
Gate-source voltage: ±12V
On-state resistance: 90mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI3443DDV-T1-GE3 SI3443DDV.pdf
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4A; 1.7W; TSOP6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4A
Power dissipation: 1.7W
Case: TSOP6
Gate-source voltage: ±12V
On-state resistance: 47mΩ
Mounting: SMD
Gate charge: 9nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SI3453DV-T1-GE3 si3453dv.pdf
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -3.4A; Idm: -6A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.4A
Pulsed drain current: -6A
Power dissipation: 3W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 276mΩ
Mounting: SMD
Gate charge: 6.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI3456DDV-T1-E3 si3456ddv.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 6.3A; Idm: 20A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 6.3A
Pulsed drain current: 20A
Power dissipation: 2.7W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 50mΩ
Mounting: SMD
Gate charge: 9nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI3456DDV-T1-GE3 si3456ddv.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 6.3A; Idm: 20A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 6.3A
Pulsed drain current: 20A
Power dissipation: 2.7W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 50mΩ
Mounting: SMD
Gate charge: 6nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
SI3457CDV-T1-E3 si3457cdv.pdf
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -5.1A; Idm: -20A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -5.1A
Pulsed drain current: -20A
Power dissipation: 3W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 113mΩ
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI3457CDV-T1-GE3 SI3457CDV.pdf
SI3457CDV-T1-GE3
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -4.1A; 2W; TSOP6
Type of transistor: P-MOSFET
Mounting: SMD
Case: TSOP6
On-state resistance: 74mΩ
Kind of package: reel; tape
Power dissipation: 2W
Polarisation: unipolar
Gate charge: 5.1nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: -30V
Drain current: -4.1A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1916 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
112+0.64 EUR
159+ 0.45 EUR
320+ 0.22 EUR
338+ 0.21 EUR
6000+ 0.2 EUR
Mindestbestellmenge: 112
SI3458BDV-T1-BE3 si3458bdv.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 4.1A; Idm: 10A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 4.1A
Pulsed drain current: 10A
Power dissipation: 3.3W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 128mΩ
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI3458BDV-T1-E3 si3458bdv.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 4.1A; Idm: 10A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 4.1A
Pulsed drain current: 10A
Power dissipation: 3.3W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 128mΩ
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI3458BDV-T1-GE3 Si3458BDV.PDF
SI3458BDV-T1-GE3
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 3.2A; Idm: 10A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 3.2A
Pulsed drain current: 10A
Power dissipation: 2.1W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1809 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
74+0.97 EUR
122+ 0.59 EUR
136+ 0.53 EUR
170+ 0.42 EUR
180+ 0.4 EUR
Mindestbestellmenge: 74
SI3459BDV-T1-E3 si3459bd.pdf
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -60V; -2.9A; Idm: -8A
Kind of package: reel; tape
Drain-source voltage: -60V
Drain current: -2.9A
On-state resistance: 288mΩ
Type of transistor: P-MOSFET
Power dissipation: 3.3W
Polarisation: unipolar
Gate charge: 12nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -8A
Mounting: SMD
Case: TSOP6
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI3459BDV-T1-GE3 si3459bd.pdf
SI3459BDV-T1-GE3
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -60V; -2.9A; Idm: -8A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -2.9A
Pulsed drain current: -8A
Power dissipation: 3.3W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 288mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2344 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
75+0.96 EUR
94+ 0.76 EUR
129+ 0.56 EUR
228+ 0.31 EUR
241+ 0.3 EUR
30000+ 0.29 EUR
Mindestbestellmenge: 75
SI3460DDV-T1-GE3 si3460ddv.pdf
SI3460DDV-T1-GE3
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 7.9A; Idm: 20A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 7.9A
Pulsed drain current: 20A
Power dissipation: 1.7W
Case: TSOP6
Gate-source voltage: ±8V
On-state resistance: 28mΩ
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2490 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
157+0.46 EUR
216+ 0.33 EUR
250+ 0.29 EUR
443+ 0.16 EUR
468+ 0.15 EUR
Mindestbestellmenge: 157
SI3464DV-T1-GE3 si3464dv.pdf
Hersteller: VISHAY
SI3464DV-T1-GE3 SMD N channel transistors
Produkt ist nicht verfügbar
SI3469DV-T1-E3 si3469dv.pdf
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -6.7A; Idm: -25A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -6.7A
Pulsed drain current: -25A
Power dissipation: 2W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 51mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI3469DV-T1-GE3 si3469dv.pdf
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -6.7A; Idm: -25A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -6.7A
Pulsed drain current: -25A
Power dissipation: 2W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 51mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI3473CDV-T1-E3 si3473cd.pdf
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -12V; -8A; Idm: -20A
Power dissipation: 4.2W
Mounting: SMD
Kind of package: reel; tape
Case: TSOP6
Drain-source voltage: -12V
Drain current: -8A
On-state resistance: 36mΩ
Type of transistor: P-MOSFET
Polarisation: unipolar
Gate charge: 65nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -20A
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI3473CDV-T1-GE3 si3473cd.pdf
SI3473CDV-T1-GE3
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -12V; -8A; Idm: -20A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -8A
Pulsed drain current: -20A
Power dissipation: 4.2W
Case: TSOP6
Gate-source voltage: ±8V
On-state resistance: 36mΩ
Mounting: SMD
Gate charge: 65nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2989 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
88+0.82 EUR
211+ 0.34 EUR
223+ 0.32 EUR
3000+ 0.31 EUR
Mindestbestellmenge: 88
SI3473DDV-T1-GE3 si3473ddv.pdf
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -12V; -8A; Idm: -30A
Mounting: SMD
Case: TSOP6
Technology: TrenchFET®
Kind of channel: enhanced
Kind of package: reel; tape
On-state resistance: 38.8mΩ
Type of transistor: P-MOSFET
Power dissipation: 3.6W
Polarisation: unipolar
Gate charge: 57nC
Gate-source voltage: ±8V
Pulsed drain current: -30A
Drain-source voltage: -12V
Drain current: -8A
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI3474DV-T1-GE3 si3474dv.pdf
SI3474DV-T1-GE3
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 3.8A; Idm: 14A
Power dissipation: 2.33W
Mounting: SMD
Kind of package: reel; tape
Case: TSOP6
Drain-source voltage: 100V
Drain current: 3.8A
On-state resistance: 126mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 10.4nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 14A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SI3476DV-T1-GE3 si3476dv.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 4.6A; Idm: 18A
Power dissipation: 3.6W
Mounting: SMD
Kind of package: reel; tape
Case: TSOP6
Drain-source voltage: 80V
Drain current: 4.6A
On-state resistance: 126mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 7.5nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 18A
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI3477DV-T1-GE3 si3477dv.pdf
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -12V; -8A; Idm: -40A
Power dissipation: 4.2W
Mounting: SMD
Kind of package: reel; tape
Case: TSOP6
Drain-source voltage: -12V
Drain current: -8A
On-state resistance: 33mΩ
Type of transistor: P-MOSFET
Polarisation: unipolar
Gate charge: 90nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±10V
Pulsed drain current: -40A
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI3483CDV-T1-E3 si3483cd.pdf
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -8A; Idm: -25A
Drain-source voltage: -30V
Drain current: -8A
On-state resistance: 53mΩ
Type of transistor: P-MOSFET
Power dissipation: 4.2W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 33nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -25A
Mounting: SMD
Case: TSOP6
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI3483CDV-T1-GE3 SI3483CDV.pdf
SI3483CDV-T1-GE3
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -7A; 2.7W; TSOP6
Type of transistor: P-MOSFET
Mounting: SMD
Case: TSOP6
On-state resistance: 34mΩ
Kind of package: reel; tape
Power dissipation: 2.7W
Polarisation: unipolar
Gate charge: 11.5nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: -30V
Drain current: -7A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2329 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
148+0.49 EUR
166+ 0.43 EUR
198+ 0.36 EUR
210+ 0.34 EUR
3000+ 0.33 EUR
Mindestbestellmenge: 148
SI3483DDV-T1-BE3 si3483ddv.pdf
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -8A; Idm: -30A; 3W
Drain-source voltage: -30V
Drain current: -8A
On-state resistance: 51.3mΩ
Type of transistor: P-MOSFET
Power dissipation: 3W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 14.5nC
Technology: TrenchFET®
Kind of channel: enhanced
Pulsed drain current: -30A
Mounting: SMD
Case: TSOP6
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI3483DDV-T1-GE3 si3483ddv.pdf
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -8A; Idm: -30A; 3W
Case: TSOP6
Mounting: SMD
Kind of package: reel; tape
Type of transistor: P-MOSFET
On-state resistance: 51.3mΩ
Power dissipation: 3W
Polarisation: unipolar
Drain current: -8A
Drain-source voltage: -30V
Gate charge: 14.5nC
Technology: TrenchFET®
Kind of channel: enhanced
Pulsed drain current: -30A
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI3493BDV-T1-E3 si3493bdv.pdf
Hersteller: VISHAY
SI3493BDV-T1-E3 SMD P channel transistors
Produkt ist nicht verfügbar
SI3493BDV-T1-GE3 si3493bdv.pdf
Hersteller: VISHAY
SI3493BDV-T1-GE3 SMD P channel transistors
Produkt ist nicht verfügbar
Si3493DDV-T1-GE3 si3493ddv.pdf
Hersteller: VISHAY
SI3493DDV-T1-GE3 SMD P channel transistors
Produkt ist nicht verfügbar
SI3499DV-T1-BE3 si3499dv.pdf
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -8V; -7A; Idm: -20A; 2W
Mounting: SMD
Case: TSOP6
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 42nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±5V
Pulsed drain current: -20A
Power dissipation: 2W
Drain-source voltage: -8V
Drain current: -7A
On-state resistance: 48mΩ
Type of transistor: P-MOSFET
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SI3499DV-T1-GE3 si3499dv.pdf
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -8V; -7A; Idm: -20A; 2W
Mounting: SMD
Case: TSOP6
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 42nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±5V
Pulsed drain current: -20A
Power dissipation: 2W
Drain-source voltage: -8V
Drain current: -7A
On-state resistance: 48mΩ
Type of transistor: P-MOSFET
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI3552DV-T1-E3 si3552dv.pdf
SI3552DV-T1-E3
Hersteller: VISHAY
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; TrenchFET®; unipolar; 30/-30V; 2.5/-1.8A
Type of transistor: N/P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 2.5/-1.8A
Pulsed drain current: -7...8A
Power dissipation: 1.15W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 360/175mΩ
Mounting: SMD
Gate charge: 3.6/3.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2998 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
88+0.82 EUR
102+ 0.71 EUR
120+ 0.6 EUR
151+ 0.48 EUR
159+ 0.45 EUR
250+ 0.44 EUR
Mindestbestellmenge: 88
Si3552DV-T1-GE3 si3552dv.pdf
Hersteller: VISHAY
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; TrenchFET®; unipolar; 30/-30V; 2.5/-1.8A
Kind of package: reel; tape
Drain-source voltage: 30/-30V
Drain current: 2.5/-1.8A
On-state resistance: 360/175mΩ
Type of transistor: N/P-MOSFET
Power dissipation: 1.15W
Polarisation: unipolar
Gate charge: 3.6/3.2nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -7...8A
Mounting: SMD
Case: TSOP6
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI3585CDV-T1-GE3 si3585cd.pdf
SI3585CDV-T1-GE3
Hersteller: VISHAY
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 20/-20V; 3.1/-1.7A; 0.9/8W
Type of transistor: N/P-MOSFET
Mounting: SMD
Case: TSOP6
On-state resistance: 78/316mΩ
Kind of package: reel; tape
Power dissipation: 0.9/8W
Polarisation: unipolar
Gate charge: 4.8/9nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Drain-source voltage: 20/-20V
Drain current: 3.1/-1.7A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2485 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
112+0.64 EUR
157+ 0.46 EUR
281+ 0.25 EUR
296+ 0.24 EUR
2000+ 0.23 EUR
Mindestbestellmenge: 112
SI3590DV-T1-E3 si3590dv.pdf
Hersteller: VISHAY
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; TrenchFET®; unipolar; 30/-30V; 3/-2A
Type of transistor: N/P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 3/-2A
Pulsed drain current: 8A
Power dissipation: 1.05W
Case: TSOP6
Gate-source voltage: ±12V
On-state resistance: 300/120mΩ
Mounting: SMD
Gate charge: 6/4.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
Si3590DV-T1-GE3 si3590dv.pdf
Si3590DV-T1-GE3
Hersteller: VISHAY
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; TrenchFET®; unipolar; 30/-30V; 2/-1.3A
Type of transistor: N/P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 2/-1.3A
Pulsed drain current: 8A
Power dissipation: 0.53W
Case: TSOP6
Gate-source voltage: ±12V
On-state resistance: 77/170mΩ
Mounting: SMD
Gate charge: 4.5/6nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI3865DDV-T1-GE3 Si3865DDV.pdf
SI3865DDV-T1-GE3
Hersteller: VISHAY
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2.8A; Ch: 1; P-Channel; SMD; TSOP6
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 2.8A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: TSOP6
On-state resistance: 45mΩ
Kind of package: reel; tape
Supply voltage: 1.5...12V DC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2482 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
142+0.5 EUR
158+ 0.45 EUR
191+ 0.38 EUR
202+ 0.35 EUR
3000+ 0.34 EUR
Mindestbestellmenge: 142
SI3900DV-T1-E3 si3900dv.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 2.4A; Idm: 8A
Kind of package: reel; tape
Drain-source voltage: 20V
Drain current: 2.4A
On-state resistance: 0.2Ω
Type of transistor: N-MOSFET
Power dissipation: 1.15W
Polarisation: unipolar
Gate charge: 4nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 8A
Mounting: SMD
Case: TSOP6
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
Si3900DV-T1-GE3 si3900dv.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 2.4A; Idm: 8A
Kind of package: reel; tape
Drain-source voltage: 20V
Drain current: 2.4A
On-state resistance: 0.2Ω
Type of transistor: N-MOSFET
Power dissipation: 1.15W
Polarisation: unipolar
Gate charge: 4nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 8A
Mounting: SMD
Case: TSOP6
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
Si3932DV-T1-GE3 si3932dv.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 3.7A; Idm: 15A
Type of transistor: N-MOSFET x2
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 3.7A
Pulsed drain current: 15A
Power dissipation: 1.4W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 73mΩ
Mounting: SMD
Gate charge: 6nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI3993CDV-T1-GE3 Si3993CDV.PDF
Hersteller: VISHAY
SI3993CDV-T1-GE3 SMD P channel transistors
Produkt ist nicht verfügbar
SI4038DY-T1-GE3 SI4038DY.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 42.5A; Idm: 150A
Mounting: SMD
Power dissipation: 7.8W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 87nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 150A
Case: SO8
Drain-source voltage: 40V
Drain current: 42.5A
On-state resistance: 3.2mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
SI4056ADY-T1-GE3 si4056ady.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 8.3A; Idm: 40A; 5W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 8.3A
Pulsed drain current: 40A
Power dissipation: 5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 33mΩ
Mounting: SMD
Gate charge: 29nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
SI4056DY-T1-GE3 si4056dy.pdf
SI4056DY-T1-GE3
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 11.1A; Idm: 70A; 3.6W; SO8
Kind of package: reel; tape
Drain-source voltage: 100V
Drain current: 11.1A
On-state resistance: 23mΩ
Type of transistor: N-MOSFET
Power dissipation: 3.6W
Polarisation: unipolar
Gate charge: 29.5nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 70A
Mounting: SMD
Case: SO8
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Si4058DY-T1-GE3 si4058dy.pdf
Hersteller: VISHAY
SI4058DY-T1-GE3 SMD N channel transistors
Produkt ist nicht verfügbar
SI4062DY-T1-GE3 si4062dy.pdf
SI4062DY-T1-GE3
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 25.7A; 5W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 25.7A
Power dissipation: 5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: SMD
Gate charge: 18.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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